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16th RD50 Workshop on Radiation Hard Semiconductor Devices For Very High Luminosity Colliders. Study on 50 75 and 150 m m thick p-type Epitaxial silicon pad detectors irradiated with protons and neutrons. Eduardo del Castillo Sanchez , Manuel Fahrer , Michael Moll, Nicola Pacifico. - PowerPoint PPT Presentation
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Study on 50 75 and 150Study on 50 75 and 150m m thick thick p-type Epitaxial silicon pad p-type Epitaxial silicon pad detectors irradiated with detectors irradiated with protons and neutronsprotons and neutrons
Eduardo del Castillo Sanchez, Manuel Fahrer, Michael Moll, Nicola Pacifico
Pad detector Characterization16th RD50 Workshop – Barcelona 31st May - 2nd June 2010
1
16th RD50 Workshop on Radiation Hard Semiconductor Devices For Very High Luminosity Colliders
OutlineOutlineStudied samples and irradiationsCV/IV measurements
◦ Tools◦ Results
TCT measurements◦ Tools◦ Results
CCE measurements◦ Tools◦ Results
Conclusions
216th RD50 workshop, Barcelona. 31st May - 2nd June
2010 Eduardo del Castillo
Studied samples and Studied samples and irradiationsirradiations
The material used in this study was produced by ITME
Epitaxial layers are grown on a highly B doped 0.02 cm CZ substrate
24GeV/c proton irradiation (CERN PS), eq= 8 x 1011 – 5 x 1015 cm-2
Some CNM-22 samples irradiated with reactor neutrons (TRIGA reactor, Ljubljana)
eq= 7 x 1012 – 3 x 1015 cm-2
Hardness factor of 0.62 used to convert 24 GeV/c protons to equivalent fluences
All samples were annealed to 4min 80oC
3
Producer d [um]
[cm]
Producer(sensor)
Device labels
Size [mm2]
Vdep [V]
|Neff| [1012cm-3]
ITME 50 220 CiS W3/W4/W5
2. 5 x 2.5 113.1 ± 2.1
59.5 ± 1.11
ITME 75 350 CiS W9/W10 2.5 x 2.5 187.5 ± 12.5
43.88 ± 2.93
ITME 150 1000 CNM CNM22 5 x 5 211.4 ± 21.3
12.37 ± 1.25
16th RD50 workshop, Barcelona. 31st May - 2nd June 2010 Eduardo del Castillo
CV/IV measurementsCV/IV measurements
4
• Sample connections in two ways◦ Using the probe station
◦ Through SMA connectors on PCB boards over which samples can be mounted
• CV / IV Switch
• Temperature control ◦ Sensor close to sample under test (e)
◦ Monitored by user in a LCD screen (f)
g
• CV measurement◦ Keithley 237 used as Voltage Source
(b)
◦ Agilent 4263B LCR meter operating Agilent 4263B LCR meter operating at 10 KHz in parallel mode (a)at 10 KHz in parallel mode (a)
• IV measurement◦ Keithley 2410 source meter (c)
◦ Keithley 485 current meter were used (g)
• In all diodes, guard ring is connected to ground and biasing is applied from the backIn all diodes, guard ring is connected to ground and biasing is applied from the back
g
• LabView software for interfacing the setup and postprocessing the data
16th RD50 workshop, Barcelona. 31st May - 2nd June 2010 Eduardo del Castillo
ToolsTools
• Measurements at room temperatureMeasurements at room temperature
CV/IV measurements CV/IV measurements
5
eqcc
eff geNN eq 0
-5 0 5 10 15 20
x 1014
0
10
20
30
40
50
Equivalent Fluence [cm-2]
|Nef
f| [1
012cm
-3]
Curves extracted from CV measurements
50 m. protons. gc = (14.65 0.72) x 10-3 [cm-1]
75 m. protons. gc = (16.29 0.38) x 10-3 [cm-1]
150 m. protons. gc = (9.98 1.41) x 10-3 [cm-1]
150 m. neutrons. gc = (8.07 1.48) x 10-3 [cm-1]
16th RD50 workshop, Barcelona. 31st May - 2nd June 2010 Eduardo del Castillo
Results. NResults. Neffeff vs fluence vs fluence
Comparing with data in n-type from Hamburg group
[Data measured by K.Kaska and presented in the 15th RD50 Workshop]
-5 0 5 10 15 20
x 1014
0
10
20
30
40
50
Equivalent Fluence [cm-2]
|Nef
f| [1
012cm
-3]
Curve extracted from IV measurements
50 m. protons. gc = (10.23 0.53) x 10-3 [cm-1]
75 m. protons. gc = (13.71 0.26) x 10-3 [cm-1]
150 m. protons. gc = (6.13 1.71) x 10-3 [cm-1]
150 m. neutrons. gc = (9.94 1.06) x 10-3 [cm-1]
Fitting model
Thickness [m] 50 75 150
gc (n-type) [10-
3cm-1]-
23-
12-6
gc (p-type) [10-
3cm-1]15 16 10[Data extracted from “ Microscopic study of proton irradiated
epitaxial Silicon Detectors “ talk, in the 15th RD50 Workshop]
TCT measurementsTCT measurements
6
• Laser wavelength 660 nm (ps pulses)• Cooled with silicon oil (down to -25
o C)
• Dry air atmosphere (humidity less than 5%)• Laser can be scanned over DUT with linear motor
stage and X-Y screws• Laser illumination only in the front of the sample Laser illumination only in the front of the sample
due to the thickness of the CZ substrate due to the thickness of the CZ substrate • Sample boards (support PCB)• Diodes are biased from the frontDiodes are biased from the front• Measurements at 5Measurements at 5oo
C C
16th RD50 workshop, Barcelona. 31st May - 2nd June 2010 Eduardo del Castillo
ToolsToolsSr 90
Source
PCB support
PM
laser focuser cooling plate
laser & source movable against support plate: DUT
d
5 10 15 20 25 30
-0.2
-0.15
-0.1
-0.05
0
t [ns]
I [V
/50
]
20 Volts 40 Volts 60 Volts 80 Volts100 Volts120 Volts140 Volts160 Volts180 Volts200 Volts220 Volts240 Volts
0 5 10 15 20 25 30
-0.2
-0.15
-0.1
-0.05
0
t [ns]
I [V
/50
]
20 Volts 50 Volts 80 Volts110 Volts140 Volts170 Volts200 Volts230 Volts260 Volts290 Volts320 Volts350 Volts
0 10 20 30 40
-0.15
-0.1
-0.05
0
t [ns]
I [V
/50
]
Vdep = VoltsVdep = Volts
35 Volts 50 Volts 65 Volts 80 Volts 95 Volts110 Volts125 Volts140 Volts155 Volts170 Volts185 Volts200 Volts
0 10 20 30 40
-0.12
-0.1
-0.08
-0.06
-0.04
-0.02
0
t [ns]
I [V
/50
]
16 Volts 31 Volts 46 Volts 61 Volts 76 Volts 91 Volts106 Volts121 Volts136 Volts
TCT measurements TCT measurements
7
16th RD50 workshop, Barcelona. 31st May - 2nd June 2010 Eduardo del Castillo
Results. Current pulses (not Results. Current pulses (not corrected)corrected)
d = 50 mVdep = 12.5 V24 GeV/c protonseq = 5.02 x 1014 cm-2
d = 75 mVdep = 32.2 V24 GeV/c protonseq = 5.02 x 1014 cm-2
d = 150 mVdep = 84.2 V24 GeV/c protonseq = 5.09 x 1014 cm-2
d = 150 mVdep = 99.36 VReactor neutronseq = 3 x 1014 cm-2
TCT measurements TCT measurements
8
• For For proton-irradiationproton-irradiation we have type inversion in the bulk we have type inversion in the bulk
• Now is possible the estimation of the trapping times for holes Now is possible the estimation of the trapping times for holes with the charge with the charge correction method [Gregor Kramberger´s doctoral thesis]correction method [Gregor Kramberger´s doctoral thesis]
• The amount of drifting charge decreases with time due to trapping asThe amount of drifting charge decreases with time due to trapping as
16th RD50 workshop, Barcelona. 31st May - 2nd June 2010 Eduardo del Castillo
Results. Trapping time Results. Trapping time estimationestimation
,
, ,( ) (0) effe h
t
e h e hN t N e
• Effective trapping time can be got from the current integral at voltages Effective trapping time can be got from the current integral at voltages above full depletionabove full depletion
• Correcting measured current with an exponential can compensate for Correcting measured current with an exponential can compensate for trappingtrapping
• The integral of IThe integral of Icc over time is equal for all voltages above depletion over time is equal for all voltages above depletion
0
( ) ( ) tr
t t
c mI t I t e
TCT measurements TCT measurements
9
16th RD50 workshop, Barcelona. 31st May - 2nd June 2010 Eduardo del Castillo
Results. Current pulses Results. Current pulses correctedcorrected
(d = 50 (d = 50 m)m)
4 6 8 10 12 14
-0.15
-0.1
-0.05
0
Time [ns]
I [V
/50
]
eq
= 2.10 x 1014 cm-2 (protons). = 5.8ns
26 Volts 36 Volts 46 Volts 56 Volts 66 Volts 76 Volts 86 Volts 96 Volts106 Volts
1 1.5 2 2.5 3
-0.25
-0.2
-0.15
-0.1
-0.05
0
Time [ns]
I [V
/50
]
eq
= 5.02 x 1014 cm-2 (protons). = 3.08ns
41 Volts 51 Volts 61 Volts 71 Volts 81 Volts 91 Volts101 Volts
5 10 15 20 25-0.1
-0.08
-0.06
-0.04
-0.02
0
Time [ns]
I [V
/50
]
eq= 1.10 x 1014 cm-2 (protons). = 14.82ns
23 Volts 43 Volts 63 Volts 83 Volts103 Volts123 Volts143 Volts163 Volts183 Volts203 Volts
TCT measurementsTCT measurements
10
16th RD50 workshop, Barcelona. 31st May - 2nd June 2010 Eduardo del Castillo
Results. Current pulses Results. Current pulses correctedcorrected
(d = 75 (d = 75 m)m)
0 5 10 15-0.12
-0.1
-0.08
-0.06
-0.04
-0.02
0
0.02
Time [ns]
I [V
/50
]
eq= 2.69 x 1013 cm-2 (protons). = 23ns
75 Volts 80 Volts 85 Volts 90 Volts 95 Volts100 Volts105 Volts
4 6 8 10 12 14-0.2
-0.15
-0.1
-0.05
0
Time [ns]
I [V
/50
]
eq
= 2.10 x 1014 cm-2 (protons). = 6.17ns
45 Volts50 Volts55 Volts60 Volts65 Volts70 Volts75 Volts80 Volts85 Volts
4 4.5 5 5.5 6 6.5
-0.35
-0.3
-0.25
-0.2
-0.15
-0.1
-0.05
0
Time [ns]
I [V
/50
]
eq
= 5.02 x 1014 cm-2 (protons). = 3.83ns
80 Volts 85 Volts 90 Volts 95 Volts100 Volts105 Volts110 Volts115 Volts
TCT measurements TCT measurements
11
2 4 6 8 10 12 14 16 18
-0.12
-0.1
-0.08
-0.06
-0.04
-0.02
0
Time [ns]
I [V
/50
]
eq
= 3.14 x 1013 cm-2 (protons). = 45ns
140 Volts160 Volts180 Volts200 Volts220 Volts240 Volts260 Volts280 Volts300 Volts
16th RD50 workshop, Barcelona. 31st May - 2nd June 2010 Eduardo del Castillo
Results. Current pulses Results. Current pulses correctedcorrected
(d = 150 (d = 150 m)m)
2 4 6 8 10 12 14 16-0.35
-0.3
-0.25
-0.2
-0.15
-0.1
-0.05
0
Time [ns]
I [V
/50
]
eq
= 2.75 x 1014 cm-2 (protons). = 6.85ns
100 Volts110 Volts120 Volts130 Volts140 Volts150 Volts
2 4 6 8 10 12 14 16
-0.5
-0.4
-0.3
-0.2
-0.1
0
Time [ns]
I [V
/50
]
eq
= 5.09 x 1014 cm-2 (protons). = 4.88ns
180 Volts190 Volts200 Volts210 Volts220 Volts230 Volts240 Volts250 Volts
TCT measurements TCT measurements
12
16th RD50 workshop, Barcelona. 31st May - 2nd June 2010 Eduardo del Castillo
Results. Current pulses Results. Current pulses correctedcorrected
(d = 150 (d = 150 m)m)
0 5 10 15-0.2
-0.18
-0.16
-0.14
-0.12
-0.1
-0.08
-0.06
-0.04
-0.02
0
Time [ns]
I [V
/50
]
eq= 3 x 1013 cm-2 (neutrons). = 42.8ns
210 Volts240 Volts270 Volts300 Volts330 Volts360 Volts
0 5 10 15 20-0.25
-0.2
-0.15
-0.1
-0.05
0
Time [ns]
I [V
/50
]
eq
= 1014 cm-2 (neutrons). = 18.56ns
130 Volts160 Volts190 Volts220 Volts250 Volts280 Volts
2 4 6 8 10 12
-0.4
-0.3
-0.2
-0.1
0
Time [ns]
I [V
/50
]
eq
= 3 x 1014 cm-2 (neutrons). = 5.59ns
220 Volts230 Volts240 Volts250 Volts260 Volts270 Volts280 Volts290 Volts300 Volts
TCT measurements TCT measurements
13
• We only take those samples until We only take those samples until eqeq = 3 x 10 = 3 x 101414 cm cm-2-2
eq
1
• Fitting model : Fitting model :
• For proton irradiation : 50m= (7.76 ± 1.55) x 10-16 [cm2ns-
1] 150m= (7.85 ± 1.93) x 10-16 [cm2ns-
1] 150m= (5.33 ± 0.36) x 10-16 [cm2ns-
1] 16th RD50 workshop, Barcelona. 31st May - 2nd June
2010 Eduardo del Castillo
Results. Hole trapping time Results. Hole trapping time estimationestimation
0 0.5 1 1.5 2
x 1015
0
0.5
1
1.5
Equivalent Fluence [cm-2]
1/
[ns-1
]
Trapping time estimation
d = 50 m. Proton-irradiatedd = 75 m. Proton-irradiatedd = 150 m. Proton-irradiatedd = 150 m. Neutron-irradiated
0 0.5 1 1.5 2 2.5 3
x 1014
0
0.05
0.1
0.15
0.2
Equivalent Fluence [cm-2]
1/
[ns-1
]
Trapping time estimation
d = 50 m. Proton-irradiatedd = 75 m. Proton-irradiatedd = 150 m. Proton-irradiatedd = 150 m. Neutron-irradiated
• For neutron irradiation : 150m= (5.92 ± 0.23) x 10-16 [cm2ns-1]
CCE measurementsCCE measurements
14
Charge amplification◦ Sensitivity of 0.75 V/pF
Shaping and base line stabilization◦ Rise time of 1us and fall time of 0.85us
◦ Adjustable Gain between 40 and 100
ADC sampling◦ 12 bit ADC in the range of ±5 V
◦ Preamplifier before digitising for higher or lower ranges
Radiactive source Sr 90 Gain of 243 eGain of 243 e--/mV at -20 /mV at -20 oo
CC Biasing from the back and guard ring to Biasing from the back and guard ring to
groundground
• Collimation and Scintillation◦ W/Cu 72/18 alloy collimator with aperture width 0.6
mm2
◦ Plastic scintillator 3 mm wide and long at 9.5 mm under the collimator
◦ Scintillator coupled to a photomultiplier through a long light guide
• X Y and Z screws to adjust collimator and scintillator position
• Temperature control◦ Air temperature block on a Peltier cooler◦ Two thermistors upstream and downstream in the
airflow along the sample◦ Sensirion SHT75 sensor for temperature and
humidity in the air temperature block 16th RD50 workshop, Barcelona. 31st May - 2nd June 2010 Eduardo del Castillo
ToolsTools
Fred HartjesNIKHEF
CCE measurementsCCE measurements
15
0 5000 10000 150000
100
200
300
400
500
Number of electrons
Num
ber
of c
ount
s
d = 50 m, proton-irradiated. eq
= 2.10 x 1014cm-2
Bias Voltage = 200 VPedestal = 2.37 mVNoise = 623 e-
MPV = 3.039 e-
= 2538 e-
HistogramFitting
0 5000 10000 150000
100
200
300
400
Number of electrons
Num
ber
of c
ount
s
d = 75 m, proton-irradiated. eq
= 2.10 x 1014cm-2
Bias Voltage = 200 VPedestal = 2.35 mV Noise = 414 e- MPV = 5446 e- = 3829 e-
HistogramFitting
-0.5 0 0.5 1 1.5 2 2.5 3
x 104
0
50
100
150
200
250
Number of electrons
Num
ber
of c
ount
s
d = 150 m, proton-irradiated. eq
= 2.75 x 1014cm-2
Bias Voltage = 200 VPedestal = 2.37 mV Noise = 623.57 e- MPV = 3.039.88 e- = 2538.1 e-
Bias Voltage = 200 VPedestal = 2.37 mV Noise = 623.57 e- MPV = 3.039.88 e- = 2538.1 e-
Bias Voltage = 200 VPedestal = 3.01 mV Noise = 2111 e- MPV = 10547 e- = 6108 e-
HistogramFitting
-0.5 0 0.5 1 1.5 2 2.5 3
x 104
0
50
100
150
200
250
Number of electrons
Num
ber
of c
ount
s
d = 150 m, neutron-irradiated. eq
= 1014cm-2
Bias Voltage = 200 VPedestal = 2.75 mV Noise = 1298 e- MPV = 11065 e- = 6286 e-
HistogramFitting
16th RD50 workshop, Barcelona. 31st May - 2nd June 2010 Eduardo del Castillo
Results. HistogramsResults. Histograms
CCE measurementsCCE measurements
1616th RD50 workshop, Barcelona. 31st May - 2nd June
2010 Eduardo del Castillo
Results. Charge collected Results. Charge collected curvescurves
0 50 100 150 2000
500
1000
1500
2000
2500
3000
3500
Voltage [V]
Col
lect
ed C
harg
e [e
- ]d = 50m. PROTON IRRADIATED.
eq
= 2.69 x 10 13 cm-2
eq
= 2.10 x 10 14 cm-2
eq
= 5.02 x 10 14 cm-2
eq
= 1.79 x 10 15 cm-2
0 50 100 150 200 250 300-1000
0
1000
2000
3000
4000
5000
6000
Voltage [V]
Col
lect
ed C
harg
e [e
- ]
d = 75m. PROTON IRRADIATED.
eq
= 2.69 x 1013 cm-2
eq
= 2.10 x 1014 cm-2
eq
= 5.02 x 1014 cm-2
eq
= 1.79 x 1015 cm-2
0 100 200 300 4000
2000
4000
6000
8000
10000
12000
14000
Voltage [V]
Col
lect
ed C
harg
e [e
- ]
d = 150m. PROTON IRRADIATED.
Ref sample
eq
= 3.14 x 1013 cm-2
eq
= 2.75 x 1014 cm-2
eq
= 5.09 x 1015 cm-2
0 50 100 150 200 250 300 3500
2000
4000
6000
8000
10000
12000
14000
Voltage [V]
Col
lect
ed C
harg
e [e
- ]
d = 150m. NEUTRON IRRADIATED.
Ref sample
eq = 3 x 1013 cm-2
eq
= 1 x 1014 cm-2
eq
= 3 x 1014 cm-2
eq
= 1 x 1015 cm-2
17
• We can see a not expected behavior in the curve for We can see a not expected behavior in the curve for thickness 75 thickness 75 mm
• Coherence among the different geometries at low Coherence among the different geometries at low fluences. fluences.
• For 150 For 150 m, we can see a drop in CCE for n-type in m, we can see a drop in CCE for n-type in comparison with comparison with p-type p-type
CCE measurementsCCE measurements
16th RD50 workshop, Barcelona. 31st May - 2nd June 2010 Eduardo del Castillo
Results. ComparisonResults. Comparison
0 0.5 1 1.5 2 2.5
x 1015
2000
4000
6000
8000
10000
12000
Equivalent fluence [cm-2]
Char
ge co
llecte
d [e
- ]Charge collected versus fluence when V
bias= 200 V
d = 50 m.p-type. Proton-irradiatedd = 75 m.p-type. Proton-irradiatedd = 150 m.p-type. Proton-irradiatedd = 150 m.p-type. Neutron-irradiatedd = 150 m.n-type. Proton-irradiatedd = 150 m.n-type. Neutron-irradiated
0 2 4 6 8 10 12 14 16 18
x 1014
0.4
0.6
0.8
1
1.2
1.4
Equivalent fluence [cm-2]
Charg
e colle
cted n
ormaliz
ed
Charge collected versus fluence when Vbias
= 200 V
d = 50 m.p-type. Proton-irradiatedd = 75 m.p-type. Proton-irradiatedd = 150 m.p-type. Proton-irradiatedd = 150 m.p-type. Neutron-irradiatedd = 150 m.n-type. Proton-irradiatedd = 150 m.n-type. Neutron-irradiated
[K. Kaska,”Study on 150 um thick n- and p-type epitaxial silicon sensors irradiated with 24GeV/c protons and 1 MeV neutrons” Nucl. Instr. and Meth. A 612 (2010) 482-487]
ConclusionsConclusions CV/IV, TCT and CCE measurements has been performed over a set of p-
type epitaxial diodes of thicknesses 50, 75 and 150 m irradiated with protons and neutrons
It was observed that the variation of the dependence with fluence of Neff , as function of thickness, is slighter in p-type than in n-type detectors
In p-type pad detectors, space charge sign inversion from negative to positive takes place after proton irradiation but not after neutron irradiation
Hole trapping time estimation was performed for all the thicknesses, getting values for 50 and 75 um proton-irradiated devices, in agreement with [1], as well as for 150 um neutron-irradiated.
For 150 um, the charge collected in p-type detectors, for low fluences, doesn´t drop with fluence so fast than for n-type.
1816th RD50 workshop, Barcelona. 31st May - 2nd June
2010 Eduardo del Castillo
[1] J. Lange,” Charge collection studies of proton-irradiated n- and p-type epitaxial silicon detectors” Nucl. Instr. and Meth. A (2010)
END
19