E IEEE Electron D Devices Society S NewsletterIEEE Electron Devices Society Newsletter April 20012 Electron Devices Society President Cary Y. Yang Santa Clara University Tel: +1 408

The 21st Annual Symposium on VLSI Technology willbe held in the historic and beautiful city of Kyoto, Japan,June 11-14, 2001. The Symposium on VLSI Technologyis jointly sponsored by the Japan Society of AppliedPhysics (JSAP) and the IEEE Electron Devices Society(EDS). The conference will be held in the Rihga RoyalHotel in Kyoto, Japan. The conference begins with a one-day short course held on Monday, June 11, 2001. This isfollowed by three days of technical sessions held fromJune 12-14, 2001. The technical sessions commencewith a plenary session given by distinguished invitedspeakers, and then continue with presentations of submit-ted technical papers. Evening “Rump Sessions” on topicsof current technical interest are also held. A banquet will be held on theevening of Tuesday, June 12, 2001.

The Symposium welcomes the submission of papers on all aspects of VLSITechnology. The scope of the Symposium includes:

• New concepts and breakthroughs in VLSI devices and processes• New functional devices including quantum effect devices with possible

VLSI implementation• Materials innovation for MOSFET and interconnect in VLSI• Advanced lithography and fine patterning technologies for high density

VLSI• Process/Device modeling of VLSI devices• Packaging and reliability of VLSI devices• Theories and fundamentals related to the above devices

Submitted technical papers are reviewed by two technical committees con-sisting of technical experts from industry and academia. These two committeesare a North America and Europe (NAE) committee, and a Japan and the FarEast (JFE) committee. Based on the combined ranking of these two committees,the best papers are selected and organized into technical sessions.

One of the strengths of the Symposium on VLSI Technology is its associa-tion with the Symposium on VLSI Circuits, which is held each year at the samelocation during the same week. The 2001 Symposium on VLSI circuits will beheld at the Rihga Royal Hotel, June 13-16, 2001. A joint "Rump Session", ona topic of interest to both technologists and circuit designers, will be held onthe evening of Wednesday, June 13, 2001.

EDS

Contributions WelcomeReaders are encouraged to submit news items con-cerning the Society and its members. Please sendyour ideas/articles directly to either the Editor-in-Chief or appropriate Editor. All contact informationis listed on the back cover page. Whenever possi-ble, e-mail is the preferred form of submission.

Newsletter Deadlines

Issue Due DateJanuary October 1stApril January 1stJuly April 1stOctober July 1st

April 2001Vol. 8, No. 2 ISSN:1074 1879

Editor-in-Chief: Krishna Shenai

®

Your Comments SolicitedYour comments are most welcome. Please write directly to the Editor-in-Chiefof the Newsletter at the address given on the back cover page.

Table of ContentsUpcoming Technical Meetings ......................1

• 2001 VLSI Technology • 2001 NVSMW• 2001 UGIM • 2001 IVMC

December 2000 AdCom Meeting Summary...2Society News .............................................8

• IEEE Members Who Received the Nobel Prize for Physics

• EDS Millennium Medals Award Luncheon• 2000 J.J. Ebers Award• 2000 EDS Distinguished Service Award• EDS Chapter of the Year Award• Regional Chapter Coordination Program• 2001 J.J. Ebers Award Call for Nominations• Obituaries• UCSD ED/LEO Student Chapter• ED Malaysia Chapter Meeting Report• 2000 EDS Regions 1-7 & 9 (US, Canada &

Latin America) Chapters Meeting• Summary of Changes to the EDS Constitution

& Bylaws• EDS Members Recently Elected to IEEE Senior

Member Grade ........................................Regional & Chapter News ..........................1639 EDS Members Elected to the IEEE Grade

of Fellow ..............................................25EDS Meetings Calendar .............................26

IEEE ElectronDevices Society

Newsletter2001 Symposium on VLSI

Technology

Daigo Temple, Kyoto,Japan

continued on page 3

IEEE Electron Devices Society Newsletter ❍ April 2001

2

Electron Devices SocietyPresidentCary Y. YangSanta Clara UniversityTel: +1 408 554 6814E-Mail: [email protected]

Vice PresidentSteven J. HilleniusAgere SystemsTel: +1 908 582 6539E-Mail: [email protected]

TreasurerApril S. BrownGeorgia Institute of TechnologyTel: +1 404 894 5161E-Mail: [email protected]

SecretaryJohn K. LowellPDF Solutions, Inc.Tel: +1 972 889 3085E-Mail: [email protected]

Sr. Past PresidentLouis C. ParrilloMotorola, Inc.Tel: +1 512 895 2002E-Mail: [email protected]

Jr. Past PresidentBruce F. GriffingGE Corp. Research & DevelopmentTel: +1 518 387 6207E-Mail: [email protected]

EDS Executive DirectorWilliam F. Van Der VortIEEE Operations Center445 Hoes LaneP.O. Box 1331Piscataway, NJ 08855-1331Tel: +1 732 562 3926Fax: +1 732 235 1626E-Mail: [email protected]

Awards ChairAlfred U. Mac RaeMac Rae TechnologiesTel: +1 908 464 6769E-Mail: [email protected]

Educational Activities ChairIlesanmi AdesidaUniversity of IllinoisTel: +1 217 244 6379E-Mail: [email protected]

Meetings ChairKenneth F. GallowayVanderbilt UniversityTel: +1 615 322 0720E-Mail: [email protected]

Membership ChairJames B. KuoUniversity of WaterlooTel: +1 519 888 4025E-Mail: [email protected]

Publications ChairRenuka P. JindalBell Laboratories ERCTel: +1 609 639 3113E-Mail: [email protected]

Regions/Chapters ChairHiroshi IwaiTokyo Institute of TechnologyTel: +81 45 924 5471E-Mail: [email protected]

IEEE Newsletter CoordinatorAndrea WatsonIEEE Operations Center445 Hoes LaneP.O. Box 1331Piscataway, NJ 08855-1331Tel: +1 732 562 6345Fax: +1 732 981 1855E-Mail: [email protected]

IEEE Electron Devices Society Newsletter is published quarterly by the Electron Devices Society of the Institute of Electrical and Electronics Engineers, Inc.Headquarters: 3 Park Avenue, 17th Floor, New York, NY 10016-5997. Printed in the U.S.A. One dollar ($1.00) per member per year is included in the Society feefor each member of the Electron Devices Society. Periodicals postage paid at New York, NY and at additional mailing offices. Postmaster: Send address changesto IEEE Electron Devices Society Newsletter, IEEE, 445 Hoes Lane, P.O. Box 1331, Piscataway, NJ 08855-1331.Copyright © 2001 by IEEE: Information contained in this Newsletter may be copied without permission provided that copies are not used or distributed for directcommercial advantage, and the title of the publication and its date appear on each photocopy.

EDS ADCOM ELECTED MEMBERS-AT-LARGE

Term Expires:

2001 2002 *2003

A. S. Brown (2) C. L. Claeys (1) I. Adesida (2)T. P. Chow (2)) J. A. Dayton, Jr. (1) T. Hiramoto (1)K. F. Galloway(1) M. Fukuma (1) L. Lunardi (1)S. J. Hillenius (1) K. M. Lau (1) A. A. Santos (2)C. Jagadish (1) K. Lee (1) S. C. Sun (2)M. A. Shibib (2) M. L. Ostling (1) H. S. P. Wong (1)R. Singh (1) D. L. Pulfrey (1) P. K. L. Yu (2)

K. Shenai (2)

Number in parenthesis represents term.* Members elected 12/00

John K. Lowell

The December 2000 meeting of EDS AdCom convened onDecember 10 in San Francisco, CA, as usual before the IEDM. AsPresident Cary Yang remarked, this year was a very special onefor EDS, due to the seminal events of the IEEE/EDS MillenniumMedal Awards and the Nobel Prize in Physics. The Millenniumawards have already been well publicized and comments on theawards luncheon are printed elsewhere in this issue. The 2000Nobel Prize in physics was awarded to three IEEE members: JackKilby, Herbert Kroemer, and Zhores Alferov. The first two namedare also EDS members. President Yang also gave out AdCom Cer-tificates of Appreciation to outgoing AdCom members, Herb Ben-nett, Hiroshi Iwai, and Kunio Tada, to the outgoing MeetingsChair, (Jim Clemens replaced by Ken Galloway), PublicationsChair (Steve Hillenius replaced by Rinuka Jindal), Ebers Commit-tee Chair (Al MacRae replaced by Lou Parrillo), and VLSI Techni-cal Committee Chair (Philip Wong replaced by Werner Weber).Hiroshi Iwai also was recognized as the outgoing NE AsiaNewsletter Editor. The remaining appointed and re-appointed ex-officio members of AdCom for 2001 were approved by AdCom.Cary’s opening comments also discussed the new TAB financialmodel, which is still unapproved, so there is no model yet for thetax on society reserves. Nevertheless, EDS will be more fiscallyconservative over the next few years as a precaution. This year infact the EDS surplus is expected to be much less due to the volatilefluctuations in the stock market.

Treasurer April Brown reported that EDS income for the yearwas projected to be $5,499K against $4,959 in expenses for anet gain of $537K. AdCom approved April’s recommendation tomaintain the 2001 EDS membership price and Transactions onElectron Devices (T-ED) and Electron Devices Letters (EDL) pricesand page budgets for 2002. The EDS office completed severalsignificant tasks in Y2000, i.e., the Regions 1-7 & 9 ChaptersMeeting, the Region 8 Chapters Meeting, and the new manu-script tracking program for T-ED. Upcoming in Y2001 are theoffering of EDS short courses on the web, the continuation ofefforts towards the EDS 50th anniversary celebration in 2002,and transitioning in the new Transactions on Device and MaterialsReliability electronic journal.

On the membership front, Chair James Kuo projects an increaseof about 150 new members over Y1999’s enrollment, which was

December 2000 AdCom Meeting Summary

continued on page 6

The 2001 Symposium on VLSI Tech-nology will be the 21st such meeting.The Symposium was initiated for the pur-pose of bringing together VLSI technolo-gists from around the world in a forumwhere ideas and resul ts can beexchanged and directions for futureadvances can be discussed and debat-ed. The location of the Symposium typi-cally alternates between the UnitedStates and Japan. The 2000 Symposiumon VLSI Technology, held in Honolulu,HI, was attended by more than 600 par-ticipants from around the world, includ-

ing significant attendance from the U.S.,Japan, Europe, Taiwan, and Korea.

Kyoto, Japan is a beautiful city whichincludes a large number of historic sitesas well as many modern amenities. TheRihga Royal Hotel is located within walk-ing distance of the Kyoto train station.Overseas travelers may find the most con-venient and economical way to reach thehotel is to travel by train or bus from Kan-sai International Airport near Osaka.

For further information, please visit ourweb site at http://www.vlsisymposium.org,or contact the following organizations:

Secretariat for VLSI Symposia (Japan)c/o Business Center for Academic Soci-eties Japan

5-16-9 Honkomagome, Bunkyo-ku, Tokyo113-8622, Japan.TEL: +81 3 5814 5800FAX: +81 3 5814 5823E-Mail: [email protected]

Secretariat for VLSI Symposia (USA)Widerkehr and Associates101 Lake Forest Blvd.Suite 400BGaithersburg, Md. 20877 USATEL: +1 301 527 0900 ext. 103FAX: +1 301 527 0994E-Mail: [email protected]

Craig LageMotorolaAustin, TX

The 2001 IEEE Non-VolatileSemiconductor Memory Work-shop (NVSMW) will be heldAugust 12–15, 2001, in Mon-terey, CA. The workshop is spon-sored by the IEEE Electron DevicesSociety. NVSMW is a uniqueforum for both specialists in allaspects of nonvolatile memorymicroelectronics and noviceswanting to gain a broader under-standing of the field. Attendeesrepresent professional and acade-mic researchers involved withsemiconductor non-volatile memo-ry development and productionalong with end users of memoryproducts. Principal topics for discussion atNVSMW are device physics; silicon pro-cessing; product testing; new technologies,including multi-level-cell approaches; pro-grammable logic; memory cell design;integrated circuits; solid state disks andmemory cards; memory reliability; andnew applications.

An important goal of NVSMW is toprovide an informal environment to encour-age discussions among participants andlively interactions. There will be morningand afternoon technical sessions, alongwith a lively evening panel discussion on a

hot topic in the nonvolatile memory field.Technical interaction among presentersand attendees is encouraged throughquestion and answer sessions and allottingample time after the formal paper presen-tations for further in-depth discussions.Organized breaks, including snacks andthe workshop dinner and lunch, are pro-vided as opportunities to meet andexchange ideas with colleagues. Break-fasts are also provided. The morning andafternoon technical sessions are organizedin a manner to provide ample time for theinformal exchange and to enjoy the beauty

of the Monterey peninsula regionof California.

This year will be the 18th meet-ing of NVSMW. The workshop isheld every 18 months, alternatingbetween February and August.The February meeting is usuallyheld the week after ISSCC and theAugust meeting in the early weeksof the month. For many years, theattendance for the workshop wasaround 100. Early workshopsalternated between Monterey,CA, for the February meeting andVail, CO, for the August meeting.The Vail venue was dropped anumber of years ago, to facilitate

attendance and travel from the nearby Sili-con Valley. In recent years, the attendancehas grown considerably, reflecting thelarge growth in the memory market, partic-ularly flash memory and embedded memo-ry on logic cores, with the last workshopattendance being in excess of 250. Inorder to maintain the workshop atmos-phere of the forum, the maximum atten-dance is limited to 300. Therefore,advance registration is highly recommend-ed. NVSMW is attended by a wide inter-

April 2001❍ IEEE Electron Devices Society Newsletter

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Upcoming Technical Meetings

2001 Non-Volatile Semiconductor Memory Workshop (NVSMW)

VLSI Technology(continued from page 1)

continued on page 4


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The 2001 University/Government/Industry Microelectronics Symposium(UGIM) will be held in Richmond, VA, June17-20, 2001. UGIM'01 will be the four-teenth in this series of biennial symposiathat bring together educators andresearchers to discuss activities related tomicro- or nano-fabrication technologies andprograms. Representatives of university pro-grams ranging from new fledgling labs tonationally recognized facilities attend toexchange information. Government agen-cies such as NSF, NIH, NIST, Sematech,SRC, DARPA, and ONR regularly partici-pate with co-authored papers and updateson funding opportunities. Industry interac-

tions with universities (often with govern-ment support) make up the other corner ofthe triangle that is UGIM. Talks on technolo-gy transfer, collaborative research, andtraining efforts have been strongly repre-sented. The UGIM Symposia are sponsored

by the Electron Devices Society of the IEEE.The UGIM Symposium has been hosted

by universities with strong microelectronicsresearch and education programs, such asRochester Institute of Technology, Universityof Texas at Austin, North Carolina StateUniversity, and the University of Minnesota.By moving the symposia to a different hostschool each time, attendees benefit fromseeing how each host school's educationand research programs are structured. Thesimilarities and differences serve as a back-drop for the discussions held at the sym-posia. The attendees also get to see howthe research laboratories and cleanroomsare constructed, maintained, staffed, and

2001 University/Government/Industry Microelectronics Symposium (UGIM)

national community from North America,Europe, Japan and other Asian countries.The past several workshops have had fea-tured sessions to address the growth ofsegments of the memory market.

The last workshop, in 2000, featuredtwo invited papers in addition to thekeynote speech presented by Alan Niebelof Web-Feet Research, Inc. He presentedthe Flash memory five-year forecast, whichestablished the 1999 Flash sales of $4.5billion and projected 2000 to be around$11 bill ion. In addition, Web-FeetResearch provided forecasts for the otherNV memories, Flash card forecasts,embedded Flash forecasts as well as appli-cation specific Flash forecasts for cellphones, digital cameras, and MP3 Playersamong the fifty different applications hecovers in his market research. One of theinvited papers was on Foundry Operationwith Flash Technology presented by Di-SonKuo of TSMC. He reviewed Flash technolo-gy development at their foundry fab, dis-cussed the complexity of running logicprocess and embedded Flash process insame fab, and managing production logis-tic issues. The other invited paper was onNAND Flash memory, presented by Riichi-ro Shirota of Toshiba Corporation, whoreviewed the NAND cell operation, relia-bility, processing and design considera-tions. We had two panel discussions in thelast workshop, in 2000. One was on Mon-day afternoon titled,"End User Forum"

moderated by John Caywood to explorepossible applications and desired productfeatures. The Wednesday evening paneldiscussion focused on Test & Testabilityand provided different perspectives fromboth test equipment suppliers and memoryproduct designers, and was moderated byAlan Niebel.

For this year's workshop, the deadlinefor submitting abstracts to the TechnicalChairman was February 23, 2001. Elec-tronic submission of the abstract usingeither Microsoft Word or Adobe Acrobatwas highly encouraged. Proceedings con-sisting of bound copies of all abstractswill be handed out to attendees at theconference, along with a list of attendeesand their phone numbers and e-mailaddresses to allow future contact of work-shop colleagues. It is anticipated that theformat of the 2001 workshop will closelymimic that of this past year's, with 30technical paper presentations expected.The last workshop consisted of six techni-cal sessions over a three day period. Theworkshop opened with a Sunday eveningregistration reception, consisting of drinksand hors d'oeuvres. The technical ses-sions consisted of an invited paper, ses-sions on: design issues, integration issues,new devices, reliability issues, and cellcharacterization & device modeling.Breakfast opened each day, while aworkshop reception dinner and eveningpanel discussion closed out Tuesdayevening. The workshop formally closedon Wednesday afternoon. Breakfast wasalso provided on Thursday morning, forthose remaining in the Monterey area.

The 2001 NVSMW will be held at theHyatt Regency in Monterey, CA. The hotelis conveniently situated in the Montereypeninsula and allows fast access to manysights. Among favorite destinations are thefamous Fisherman's Wharf, Cannery Row,The Monterey Bay Aquarium, 17-Mile Dri-ve, nearby Carmel, and the many tranquilsights of natural beauty of the Montereycoastline and the fine dining experiencesof the area. The Hyatt Regency is locatedat One Old Golf Course Road, Monterey,CA. The hotel can be reached by TEL:408-372-1234.

For registration information and generalinquiries about NVSMW, please contactany of the workshop chairmen.

General Chairman: Arthur Wang,Hyundai Electronics America, 3103 NorthFirst Street, San Jose, CA 95134 USA,TEL: 408-232-8811, FAX: 408-232-8805,E-Mail: [email protected];

Technical Chairman: Krishna Parat,M/S RN3-01, Intel, 2200 Mission CollegeBlvd. Santa Clara, CA 95054, USA, TEL:408-765-9381, FAX: 408-765-5775, E-Mail: Krishna.Parat@ intel.com;

Finance Chairman: Kelly Baker, Motoro-la, Inc., Mail Drop OE341, 6501 WilliamCannon Dr. West, Austin, TX 78735, TEL: 512-895-8335, FAX: 512-895-2722,E-Mail: [email protected].

You can also visit the NVSMW website at http://www.hea.com/hean2/flash/nvsmw/index.html.

Arthur WangHyundai Electronics America

San Jose, CA

NVSMWcontinued from page 3

April 2001 ❍ IEEE Electron Devices Society Newsletter

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2001 International Vacuum Microelectronics Conference (IVMC)

funded. At UGIM 2001, Virginia Common-wealth University and the State of Virginiawill be highlighted. In the 1990's Virginia'sstate and local governments embarked ona mission to transform Virginia into the "Sili-con Dominion". Major DRAM manufactur-ers such as Infineon Technologies (formerlyWhiteOak Semiconductor) and DominionSemiconductor have fabrication facilities inVirginia and both have announced majorexpansions. Additionally, a group of Vir-ginia Universities known as the VirginiaMicroelectronics Consortia (VMEC) will berepresented at the symposium. Variousschools will describe their efforts at micro-electronic education, research and collabo-ration under the consortia.

This year's host for the symposium is Vir-ginia Commonwealth University's Micro-electronics Center. The sessions will be heldin the new VCU School of Engineeringbuilding, which is two blocks from the his-toric Jefferson Hotel. An outstanding pro-gram is planned with about 60 papers fromeach of the groups, universities, governmentand industry. The UGIM symposium tradi-tionally covers a broad range of topics.Papers range in focus from descriptions ofmicroelectronics programs through detailedresearch papers. The largest session is usu-ally devoted to reporting on the progress ofmicroelectronics educational and researchprograms at various educational institutions.Technology computer aided design (TCAD)new process or device modeling and simu-lation are also usually strongly represented,as are papers concerning devices and sys-tems. Materials and processing papers fromboth standard silicon and compound semi-conductors will be presented, along withprocess equipment development, manufac-turing, statistical process control and design

of experiments. Processing results ofteninvolve equipment that is also found at otheruniversities and can be beneficial to atten-dees with similar interests to use in their ownresearch programs or at the least expandtheir knowledge

Microelectromechanical systems(MEMS) focused papers have been increas-ing in number and a session or two devot-ed to all aspects of MEMS will be held.Topics include simulation, processing, pack-aging and testing. The confluence ofbiotechnology and micro-fabrication is anadditional subject area for which papersare expected. The UGIM symposium, inparticular, is a good place to discuss theco-existence of MEMS processes and micro-electronics in a facility. UGIM has tradition-ally been a good forum to report on effortsthat tie together universities with govern-ment and industry programs. Typical inter-actions include distance learning andre-training, technology transfer and industri-al implementation of new ideas. As theamount of funding available for traditionalmicroelectronics research tightens, universi-ty research programs are stretching out tonew areas. New applications such asFRAM, information storage, “bio-chips”,displays, and advanced sensors bring newchallenges and opportunities.

While the technical sessions begin onMonday, June 18, on Sunday afternoon,June 17, the VCU Microelectronics Centerwill host an open house. The open housewill consist of an informal discussion ses-sion for people managing microelectronicslaboratory facilities and tours of the facility.The discussion will focus on issues commonto such facilities such as funding, equipmentacquisition, maintenance, staff, operationalexpenses, processing issues, industry inter-

action, collaborations with other universi-ties, intellectual property and compatibilityproblems. Tours will be given of the clean-rooms, support areas, and characterizationlabs. Staff members will be on hand to dis-cuss the operation of the facility andanswer questions. Attendees have a uniqueopportunity to give a short presentationdescribing their facility and share some oftheir experience and knowledge aboutwhat works and what does not.

Richmond offers a range experiencesfrom the historic to the exciting edge. Youcan tour Civil war battle sites and museumsin the former capital of the confederacy orcan take your kayak through class 5 white-water right downtown. There are river cruis-es, plantations, Monument Avenue,shopping, dining, the symphony or the bal-let. Richmond has been described as "theperfect blending of the past and present".Richmond, being the state capital, also haswonderful science and art museums. Wash-ington D.C., the Chesapeake Bay, VirginiaBeach, and the Shenandoah Valley are allnearby as is historic Jamestown andWilliamsburg. A block of rooms is avail-able at a reduced rate at the majestic Jeffer-son Hotel (http://www.jefferson-hotel.com),a national historic landmark, just twoblocks from the symposium site.

For more information on the symposium,please visit the symposium website athttp://www.vcu.edu/egrweb/ugim2001,or contact Rob Pearson, Virginia Common-wealth University, 601 West Main Street,Richmond, VA 23284, TEL: 804-827-7627or E-Mail: [email protected].

Rob PearsonVirginia Commonwealth University

Richmond, VA

The International Vacuum Microelec-tronics Conference (IVMC), whichrotates its venue between America,Europe, and Asia, returns to the USA in2001 and will be held at the Universityof California in Davis, August 13-16,2001. The IEEE served as the pioneer-ing sponsor for this international confer-ence with the first IVMC having beenheld in Willamsburg, Virginia in 1988.Since then, the IVMC has been held in adiverse set of locations, including Vien-na, Austria, Newport, Rhode Island, St.Petersburg, Russia (the first IEEE conferenceever held in the former Soviet republic),

South Korea, and (most-recently, in August,2000) Ghanzhou, China. UC Davis isproud to join this group by hosting the 14th

IVMC in its beautiful Northern Californiacollege-town setting. A group of approx-imately 200 attendees is anticipated,coming from all parts of the world topresent the latest research results in thefield of Vacuum Microelectronics.

Field-Emission Vacuum Microelec-tronics has evolved from a promisinglaboratory curiosity to a foundationaltechnology for exciting, emerging appli-cations. Pioneering work during the70's and 80's in the field, which was

centered on the use of low-workfunction

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metals and semiconductors fashioned intomicroscopic needles, as "field-emissiontips", was restrained by the somewhatcrude microfabrication tools and tech-niques which were available at that time.Along with the exponential increase inmicrostructure feature density, driven by thesemiconductor memory and microprocessordemands being imposed today, have comethe benefits of superior lithographic andfine-feature microfabrication tools andmethods which have advanced the vacuummicroelectronics arena substantially. Conse-quently, field emission devices are nowbeing fabricated in large-scale arrays, withnanoscopic features, and operating at lowvoltages. Furthermore, the novel microstruc-ture fabrication techniques which havebeen developed in the sensor, actuator,and MEMS community are being appliedto vacuum microelectronics and are result-ing in a diverse variety of emitter structuresand configurations. At the same time, excit-ing advances in materials science, specifi-cally in the areas of deposition of carbonnanotubes, microcrystalline diamond andgraphite films, and wide-bandgap semicon-ductors (GaN, SiC, diamond, etc.), as wellas novel low-workfunction metal carbides,have resulted in a virtually limitless set ofemission surface modification possibilitieswhich improve performance and dramati-cally increase the potential applications forfield emitters.

Early work in vacuum microelectronicsfocused on the application of field-emittersto high-frequency switching devices, radia-tion-hard electronics systems, and RF ampli-fiers. However, in the past decade, the useof field-emission devices as pixel cathodesin flat-panel field-emission displays (FED's)emerged as an important commercial mar-

ket, resulting in several American, Asian,and European corporations deciding todevelop and market prototype displays. Asthe display market is just now starting toinclude commercial FED's among theiravailable products, several other applica-tions of field-emission cathodes are emerg-ing as having commercial potential. Theseinclude the use of field-emission sources forspecialty lamps, such as traffic signals,backlights for laptop displays, pixel unitsfor jumbo displays, theatre lights, and envi-ronmentally-safe, low-power replacementsfor compact fluorescent lights. Highly spe-cialized opportunities also exist, includingnanoscopic X-ray sources for in-vivo med-ical procedures and remote imaging, andnumerous spectroscopic and instrumentapplications of high-brightness electronsources. In the field of vacuum microelec-tronics, this is an exciting time because ofthe opportunities which now exist.

This year's Conference venue, Davis,CA, is located 65 miles northeast of SanFrancisco and 15 miles west of Californi-a's capital, Sacramento. UC Davis, with26,500 students, is the third largest of theUC system and has the third largest Col-lege of Engineering in California. The cityis readily accessible from three major air-ports and lies in close proximity to manymajor California vacation spots, such asthe Sierra Nevada, with Lake Tahoe orYosemite, the Pacific Coast, with Carmeland San Francisco, and the Napa/Sono-ma wine country. August in Davis typical-ly enjoys warm days and coolDelta-breeze nights. The City of Davis isfamous for its restaurants, art galleries,bookshops, and a unique college atmos-phere. Attendees can stay in a broadrange of hotels, or take advantage of veryeconomical student housing (with meals, ifdesired) which is made available throughUC Davis Conference Services. Included

with the Conference Program will be agarden reception, a field trip and dinnerto a Napa-Valley winery, and the Confer-ence Banquet, which will be held at thefamous California Railroad Museum innearby historic Old Sacramento. As inprevious IVMC's, a Companion's Programwill also be organized.

The Conference Committee will beselecting oral and poster presentations from200-word short abstracts, with a submis-sion deadline of May 1, 2001. Submissionby e-mail text (no attachments) is stronglyencouraged, however regular mail or FAXsubmissions will be acceptable; all contactinformation is given below. Accepted pre-senters will be notified and a two-pageExtended Abstracts, for inclusion in theIVMC 2001 Technical Digest, will be dueby July 1, 2001. As in past years, full-length manuscripts, for publication in a ref-ereed Journal, will be received at theConference. The General Chairman ofIVMC 2001 is Prof. Charles E. Hunt of theDepartment of Electrical and ComputerEngineering at UC Davis. Prof. Hunt directsthe Vacuum Microelectronics Group at UCDavis and members of this Group, includ-ing Dr. S. A. Chakhovskoi and N. Chubun,will be assisting in organizing the Program.Questions regarding the Technical Programshould be directed to this Group by e-mailat ivmc@ ece.ucdavis.edu. The facilitiesand registration arrangements will bedirected by Ms. Julie Sheehan of UC DavisConference Services. Non-technical ques-tions concerning the Conference should bedirected to her, by e-mail, at [email protected]. Most questions can also beanswered by visiting the IVMC 01 websiteat ht tp://www.cevs.ucdavis.edu/Cofred/Public/ Aca.

Prof. Charles E. HuntUniversity of California

Davis, CA

IVMCcontinued from page 5

12,977. Of the total, the US dominateswith 59.1%, followed by Region 8 (Europe)with 18.7% and Region 10 (Pacific Rim)with 10%. There are also 3,937 permanentmembers as well. Recognizing the need tohelp individuals in developing countriescover the prohibitive costs of IEEE and EDSmemberships, the EDS Membership Com-mittee has proposed a new programwhereby EDS would cover the cost of theIEEE and EDS membership fees for individu-

als whose annual income fall at or belowUS$8,600. AdCom approved to fund thisprogram at $10K to cover an estimated200 members in 20 chapters who wouldtake advantage of this new program. TheMembership Committee also proposed anew incentive for existing members toapply for Senior Membership. A direct mailpromotion to prospective senior members isplanned. AdCom members will serve asconduits for references and assistance.Chapters will receive $25 for each memberwho is approved to be elevated to seniormember grade and who has designatedEDS as the nominating entity. A budget of

$10K was approved by AdCom for theprojected 400 new SMs in Y2001.

The number of EDS chapters worldwidenow stands at 103 as reported by HiroshiIwai, Regions/Chapters Chair. The newestto be added this year were Denver, Kansai,and a joint ED/LEO chapter at the Univ. ofCalifornia at San Diego. A new Regions/Chapters Committee organization has beenput in place, with the formation of five Sub-committees for Regions and Chapters (SRC)which is organized into five geographicalareas with a chair and vice chair for eacharea. Further information concerning thereorganization is included in a separate arti-

December AdComcontinued from page 2


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cle in this issue. Iwai-san also announcedthat the ED/SSC Yugoslavia Chapter hasbeen awarded the "Chapter of the Year"award for 2000. Congratulations to thischapter’s officers and members on their suc-cessful effort!

Outgoing Publications Chair, Steve Hil-lenius, who will be replaced by Rinuka Jin-dal, reported that the impact factors forboth T-ED and EDL significantly increasedthis year, and the transfer of editorialresponsibility (i.e. manuscript submission &processing) to the EDS Piscataway officehas been completed. Steve also introducedDoug Verret of Texas Instruments, theincoming Editor-in-Chief of T-ED. It wasalso revealed that in place of an archivalCD-ROM of all issues of T-ED & EDL backto 1954, a "Best of" publication is underconsideration. This publication will includea subset of seminal papers published since1954 in T-ED and EDL selected by a com-mittee based on information such as thecitation index and peer reviews.

In other committee reports, Ken Gal-loway, Meetings Chair, stated that in 2000EDS had 31 sponsored meetings, 60 thatwere technically co-sponsored, and 7 thatwere cooperatively sponsored for a total of98 meetings. AdCom also approved themeeting list for 2002. As Technical Com-mittee Coordinator, Steve Hillenius namedthe two new committees, i.e., Nan-otechnology and TCAD that havebeen added this year. The responsi-bilities of the technical committeeswill include reporting new technologydirections to AdCom and making rec-ommendations for EDS publications& meetings. On the awards front, thisyear’s EDS Distinguished ServiceAward goes to Mike Adler, formerDivision I Director and EDS President,and the J. J. Ebers Award goes toBernard Meyerson of IBM.

The Education Committee, underIlesanmi Adesida, has been quite

busy this year. The DL program has given42 lectures by 26 lecturers. This is a goodnumber, but changes in the program arebeing considered to have more lecturersand chapters participate. Questionnairesconcerning the DL Program were sent toboth lecturers and chapters. Lecturers likethe program and value their participation.However, they believe that the programshould be better promoted, have animproved budgeting process, and perhapsinclude video conferencing. Chapters, inturn, like the program, but feel that morelectures should be available on video. Thedisparity between lecturers who do anddo not actively participate (for whateverreason) is also growing. It is the commit-tee’s opinion that those who do not giveat least one talk every two years may bedropped from the roster. The EDS Gradu-ate Fellowship announcement is going outearly in 2001. The EDS Short Course"Vanguard" program for 2000 was com-prised of three live presentations in the USand in 2001 short courses will be givenoutside the US as well. EDS expects tolaunch its first efforts at giving these cours-es over the web within the next year.AdCom approved the underwriting ofindependent short courses, live and webbased. Our EDS outreach program hasmade some progress at extending assis-tance to several minority universities toform student branch chapters.

In other actions, a proposal for EDS tosupport the (ISDRS) meeting as a follow-onto IEDM was withdrawn. EDS received fiftyFellows nominations this year of which 2were rated extraordinary, with 23 highlyqualified. Twenty-six of the nominees evalu-ated by EDS were approved by IEEE. Sub-sequent to the meeting it was learned that41 EDS members were approved as Fel-lows. April Brown presented a motion forEDS to underwrite its portion of the cost($7K) to start an IEEE Nanotechnology

Council in which EDS will participate with17 additional societies; AdCom approvedthis motion. The society also voted to be aco-sponsor (33%) of a new IEEE Nanotech-nology Conference with two other IEEEsocieties. AdCom also gave its consent tothe several changes in its Constitution andBylaws. The changes primarily involvedgranting Technical Committee chairs thesame voting rights as Standing Committeechairs and giving technical and standingcommittee members two-year instead ofone-year terms. A summary of the changesto the EDS Constitution and Bylaws isincluded in another article in this issue.Five thousand dollars was also approvedby AdCom to continue the current projectat the Historical Electronics Museum in Bal-timore, MD.

Craig Casey reported that luminariesJohn Saby, Gene Gordon, and James Ear-ly have been interviewed for the EDS OralHistories Project which is part of EDS’ 50thAnniversary Celebration. These interviews,along with another dozen or so to be con-ducted with other famous individuals in thefield of Electron Devices, will comprise a50 years of EDS History Publication to besent to all EDS members. Recently, the his-tories were given over to Michael Riordan,author of the book "Crystal Fire" who isnow under contract to complete them andconduct all the remaining interviews. RalphWyndrum, current Division I Director,addressed the AdCom giving an outline ofprojected plans for IEEE covering member-ship, the IEEE Presidential Election, IEEEAwards, New Products & Services, andIEEE Operations. Mark Law, this year’sIEDM Chair, stated that 2300-2400 atten-dees were expected for the 2000 meetingand all short courses were sellouts.

Turning to publications, all EDS flagshipjournals continue to prosper. The statisticsof Yuan Taur, EDL Editor-in-Chief, showedthat 183 of 442 submissions were pub-

lished in 2000, very close to 1999’stotal. Moreover, turnaround time hasbeen reduced to about 7 monthswith the move of the PublicationsOffice to Piscataway. Outgoing T-EDEditor, Renuka Jindal, presented hisstudy of the impact factor for T-ED tofind out just exactly how the journalhas been affected over the last twen-ty years. EDS Newsletter Editor,Krishna Shenai, made a request fora page increase to handle suchadditional news areas as student

S.C. Sun, Ilesanmi Adesida, Paul Yu and Kei MayLau in discussion at the AdCom meeting.

Craig Casey presents to AdCom the status of the EDS 50thAnniversary project to produce an oral histories booklet. continued on page 24


8

Society News

IEEE Members Who Received the Nobel Prize for PhysicsThe year 2000 Nobel Prize in Physics was awarded one

half to Jack S. Kilby “for his part in the invention of the integrat-ed circuit,” and one half jointly to Herber Kroemer and ZhoresI. Alferov for “developing semiconductor heterostructures usedin high-speed- and opto-electronics.” Both Jack Kilby and Her-bert Kroemer are members of the Electron Devices Society,while Zhores Alferov is a member of LEOS. Their work was rec-ognized for providing the foundation for modern informationtechnology. Not only do we want to congratulate our col-leagues for this recognition of their contributions, but this awardalso recognizes the impact that the electron devices of our Soci-ety have made to information technology. This award was

made for invention rather than a discovery in physics.The three biographies of the Nobel recipients have been

written by close colleagues. Jim Merz was recruited by HerbKroemer to come to the University of California at Santa Bar-bara. Willis Adcock was Jack Kilby’s supervisor at TI whenhe demonstrated his integrated circuit. Nick Holonyak andZhores Alferov have visited and worked with each other formany years.

H. Craig Casey, Jr.Duke University

Durham, NC

Jack S. KilbyJack S. Kilby has been

awarded the Nobel Prizein Physics for 2000 by theRoyal Swedish Academyof Science “for his part inthe invention of the inte-grated circuit”.

Jack joined Texas Instru-ments, Dallas, TX, in June 1958, andbecame involved with his idea of a minia-ture circuit made up only with semiconduc-tor parts. He demonstrated the first simplecircuits in September 1958. His impairedhearing was a factor in his interest in hear-ing aids and miniaturization.

Pat Haggerty, President of Texas Instru-ments, immediately became very interestedin the project and this insured manage-ment support for an expanded program.

The applications for integrated circuitsgrew rapidly. Fairchild Semiconductorbecame a major player with the inventionsof Bob Noyce. These developments arewell described in the paper: “Invention ofthe Integrated Circuit,” J. S. Kilby, IEEETransactions on Electron Devices, vol. ED-23, no. 7, p. 648, July 1976.

The past 50 years have witnessed sucha remarkable growth of the related infor-mation industries: semiconductor, comput-ers and telecommunications. Thedevelopments have created such a wideapplication of products that as we enterthe new millennium we will witness majorglobal transformation of national societies.

Jack Kilby was born in Jefferson City,MO, in 1923. He grew up in Great Bend,

KS. He received his B.S. in electrical engi-neering from the University of Illinois and aM.S. degree from the University of Wis-consin. In 1947, he began his career withthe Centralab Division of Globe Union Inc.in Milwaukee, and then in 1958 joined TI.He is a Fellow of the IEEE and a memberof the National Academy of Engineering.Among his many awards are the IEEE’sMedal of Honor, the Cledo BrunettiAward, and the David Sarnoff Award. Heholds over 60 patents.

Congratulations, Jack Kilby.Willis Adcock

Austin, TX

Herbert KroemerThe theme that threads

its way through the manyaccomplishments of Her-bert Kroemer is bestdescribed by his favoritetalk: “Heterostructures forEverything”. His interest inutilizing combinations of

dissimilar materials for improved devicesmotivated a lifetime of work; his insistencethat one understand the band diagramresulting from these combinations was leg-endary - “If you cannot draw the band dia-gram, you don’t know what you aretalking about!” In an early paper pub-lished in the RCA Review (1957), he wasthe first to realize the consequences of theelectric fields generated at heterointerfacesbetween semiconductor materials. Onesuch consequence was the possibility of

making a greatly improved transistor (theheterojunction bipolar transistor, or “HBT”)by using a wide bandgap emitter. Todaythe HBT is at the heart of the highest-speedcommercially available electronic devices.

Notably, Kroemer was also the first torealize the possibilities for carrier and pho-ton confinement offered by a double het-erostructure, at a time when the intenseresearch on homojunction semiconductorlight emitters seemed to be making littleprogress towards a practical room-temper-ature laser. In what proved to be anotherlandmark paper in the Proceedings of theIEEE (1963), a paper which drew littleattention at the time, Kroemer suggestedthat a vastly improved laser could bedesigned by sandwiching a layer of a nar-row bandgap semiconductor between twowide-bandgap semiconductors. This novelidea is the basis for the entire modernoptoelectronics industry.

Today Kroemer continues his fascina-tion with dissimilar materials through hisinvestigations of so-called broken-bandgapcombinations of arsenides and anti-monides having mid-infrared device appli-cations, and the induced superconductingbehavior of semiconductors sandwichedbetween superconductors.

Kroemer’s impact in education has alsobeen significant, with two unique andwidely used textbooks. Thermal Physics byKittel and Kroemer (Freeman, San Francis-co, 1980), was a result of Kroemer’s manysuggestions to Charles Kittel for improve-ment of the latter’s original version of thebook; Kittel consequently invited Kroemer

Jack S. Kilby

Herbert Kroemer

to join him in a thorough revision of thatwork. The second book, QuantumMechanics (Prentice Hall, EnglewoodCliffs, 1994), culminated years of teachingintermediate quantum mechanics to electri-cal engineers, condensed matter physi-cists, and materials scientists.

Herbert Kroemer, the Donald W. Whit-tier Professor of Electrical Engineering andProfessor of Materials at the University ofCalifornia Santa Barbara (UCSB), wasborn in Germany in 1928. He received hisPh.D. from the University of Gottingen atthe age of 24. He later immigrated to theU.S., where he worked at RCA Laborato-ries (1954-57), Varian Associates (1959-66), the University of Colorado, Boulder(1968-76), and UCSB (1976-present). AtUCSB he convinced the administration toinvest its limited resources not in conven-tional Si technology, but in the emergingfield of compound semiconductors, whichKroemer, as founding member of thegroup, built into a world-class program.He is the winner of several major awards,including the J. J. Ebers Award, the JackMorton Award of the IEEE, the HeinrichWelker Medal, and the Alexander vonHumboldt Research award. He holds hon-orary doctoral degrees from the TechnicalUniversity of Aachen, Germany, and theUniversity of Lund in Sweden, and becamea member of the National Academy ofEngineering in 1997.

Jim MerzUniversity of Notre Dame

Notre Dame, IN

Zhores I. AlferovWhen R.H. Rediker’s

group (Lincoln Laboratory,MIT) reported generationand long-range transmis-sion (and detection) of arecombination-radiationsignal from a simple Zn-dif-fused GaAs p-n junction at

the 1962 IRE Solid State Device ResearchConference (July, Durham, NH), optoelec-tronics became a reality. Immediately therace began to defeat the large recombina-tion-radiation linewidth (≥100 Å) and tomake a laser of this strangest of all light-emitting substances—the semiconductor.Little did anyone appreciate that by fall of1962, GaAs and the III-V alloy GaAs1-xPxwould be operating as directly-driven (cur-rent-driven) diode lasers. Simulated recom-bination radiation in a semiconductorcavity demolished the question of thebroad linewidth, and the erroneous specu-

lation and wish for some form of discretetransition (e.g., an unknown mysteriousatom) in a p-n junction. Also demolished,by the GaAsP laser, was the question ofthe viability of III-V alloys, which indeed,were required for heterojunctions. All ofthese questions were settled in 1962.

After these break-through events(1962), one of the first to appreciate thefact that a diode laser should take the formof a p-n double heterojunction was ZhoresI. Alferov, the 2000 Nobel laureate. Infact, after first meeting Alferov in Leningradin 1967, in a trip report of limited circula-tion, I wrote:

“Zhorez [sic] then took me to hisgroup to talk about heterojunctions andGaAsP. Heterojunctions are very interest-ing to Zhorez [sic]; he wants to use suchjunctions as high efficiency emitters intoGaAs platelets sandwiched betweenwider gap material on either side. Hethinks maybe a low threshold GaAs lasercan be built.”

After the semiconductor laser work of1962, Alferov and his research grouplaunched a large effort to realize doubleheterojunction devices (for superinjectionand carrier and photon confinement). Hewas able, with the AlGaAs-GaAs system,to demonstrate the first low threshold dou-ble heterostructure solar cells (1970), het-erojunction p-n-p-n switches (1969), laserp-n-p-n switches (1971), high efficiencyAlGaAs heterostructure LEDs (1968), wide-gap emitter AlGaAs transistors (1972),and grating lasers with narrow beam

divergence (1974). He is credited withbeing one of the prime instigators of thenew field of heterostructure electronics,which now includes quantum well het-erostructures and superlattices. His mostrecent work has been concerned with try-ing to convert the quantum-well laser into aquantum-dot laser.

Zhores Alferov was born on March 15,1930, in Vitebsk, Byelorus (USSR) andreceived most of his higher education inLeningrad before becoming a permanentmember of the Ioffe Physico-Technical Insti-tute and ultimately the director of the Insti-tute, as well as now Russian AcademyVice President and member of the StateDuma. He spent the winter of 1970 andspring of 1971 in Urbana as an Academyexchange visiting scientist. Besides beinga member of the Russian Academy of Sci-ences, he is a foreign member of numer-ous academies, including the U.S.National Academy of Sciences (1990)and the National Academy of Engineer-ing (1990). He has published over 400papers on heterojunctions and hasreceived many awards, including the Bal-lantyne Medal (Franklin Institute, 1971),Lenin Prize (1972), H-P Europhysics Prize(1978), State Prize (1984), GaAs Confer-ence Award and Welker Medal (1987),Karpinski Prize (1989), Ioffe Prize (1996),and OSA Holonyak Award (2000).

Nick HolonyakUniversity of Illinois

Urbana, IL


9

Zhores I. Alferov

2001 EDS J.J. Ebers Award

Call for NominationsThe IEEE Electron Devices Society invites the submission of nominations for

the 2001 J. J. Ebers Award. This award is presented annually by EDS to honoran individual(s) who has made either a single or a series of contributions ofrecognized scientific, economic, or social significance to the broad field ofelectron devices. The recipient(s) is awarded a certificate and a check for$5,000, presented at the International Electron Devices Meeting (IEDM).

Nomination forms can be requested from the EDS Executive Office (see con-tact information on page 2). The deadline for submission of nominations for the2001 award is July 13, 2001.


10

The highlight of the2000 EDS AdCom Meet-ing in San Francisco wasthe EDS MillenniumMedals Award Luncheon,which was held on Sun-day, December 10. Aspart of IEEE’s Third Millen-nium celebration, EDSpresented its allotment of45 IEEE MillenniumMedals to its honoredrecipients, “For their out-standing contributions tothe Electron Devices Soci-ety and to the field of elec-tron devices.” Presentingthe awards were IEEE Past President KenLaker and EDS President Cary Yang.Included in the ceremony were historicaland personal anecdotes and information

on each recipient pre-pared by the past EDSPresident and AwardsChair, H. Craig CaseyJr. Among the recipientswere AdCom members,EDS Officers, and pasteditors of EDL, T-ED,and the EDS Newslet-ter.

Attending and receiv-ing their medals wereRobert Adler, ShojiroAsai, Frank S. Barnes,Dennis D. Buss, H.Craig Casey, Jr., Freder-ick H. Dill, Jr., Lester F.

Eastman, James F. Gibbons, James S. Har-ris, Cyril Hilsum, David A. Hodges, JamesA. Hutchby, Renuka P. Jindal, StephenKnight, Matt Kuhn, Alan L. McWhorter,

James L. Merz, Richard S. Muller (represent-ed by his wife), Harvey C. Nathanson,William T. Pietenpol, James D. Plummer,Robert H. Rediker, Joseph E. Rowe, J. EarlThomas, Jr., Richard B. True, Glen Wadeand Jerry M. Woodall. Recognized but notin attendance were recipients Willis A.Adcock, M. George Craford, Rudolf S.Engelbrecht, Clifford E. Fay, A. GeorgeFoyt, Eugene I. Gordon, Robert N. Hall,Nick Holonyak, Jr., Aleksandar B. Jaksic,Lucian A. Kasprzak, G. Ross Kilgore, ToivoLiimatainen, Hebert J. Reich, Ian MunroRoss, John S. Saby, John B. Singleton, EarlL. Steele, and Clare G. Thornton. EDS isproud to salute and reward these distin-guished individuals, and deeply appreciatestheir efforts on behalf of the Society.

John K. LowellPDS Solutions Inc.

Richardson, TX

2000 J.J. Ebers AwardThe 2000 J. J. Ebers Award,

the prestigious Electron DevicesSociety award for contributionsto electron devices, was present-ed to Dr. Bernard J. Meyersonof IBM at the International Elec-tron Devices Meeting in SanFrancisco, CA, on December11, 2000. This award recog-nizes his “Seminal Contributionsto the Growth of Si/SiGe Heterostructuresand Leadership in its Application toTelecommunications Integrated Circuits.”This emerging technology has beenapplied to the manufacture of high-speedintegrated circuits and promises to make amajor impact on the technology that is uti-lized to manufacture integrated circuits thatare used in high speed and wireless com-munications systems.

Bernard was born in New York Cityand attended the Bronx High School ofScience. He then completed a BS inPhysics at the City College of New York.Dr. Meyerson received a PhD in SolidState Physics from the City College of theCity University of New York in 1980. Histhesis work examined the growth and elec-trical properties of hydrogenated amor-phous carbon, and this began his periodof ten years work in the study of materialsgrowth and analysis.

Upon completion of his PhD require-ments, he joined IBM as a Research Staffmember and focused his attention on stud-

ies of the fundamentals of the chem-ical deposition of thin films andtheir electrical properties. Thesestudies spanned many materials,ranging from amorphous silicon togallium arsenide. In the mid-1980’s, he incorporated his under-standing of these chemical systemsinto the growth of thin films byUltra-High-Vacuum/Chemical

Vapor Deposition. The most significantresult of these studies was the depositionand growth of Silicon-Germanium epitaxiallayers at temperatures of 500°C andbelow, leading to the development of man-ufacturing techniques for the production ofextremely high speed Si/Ge HeterojunctionBipolar Transistors (HBT).

Dr. Meyerson led a team of IBMresearch personnel to apply this Si/GeHBT technology to the design and fabrica-tion of integrated circuits, first for computerand then for communications applications.He then was instrumental in the formationof alliances between IBM and numerouscorporations to leverage this high-speedtechnology to the manufacture of commer-cial products. Early consumer and com-mercial products included a 10 GbpsSONET data system and an 802.11bwireless LAN card.

IBM’s analog and mixed signal devel-opment and subsequent commercializationof this technology was consolidated underDr. Meyerson in 1998. He is presently

Vice-President of the CommunicationsResearch and Development Center in IBM.This organization encompasses IBM’sworldwide communications technologyand circuit designs efforts and supports arapidly increasing customer base.

Dr. Meyerson received IBM’s highesthonor in 1998, that of IBM Fellow. He is aFellow of the American Physical Society.He holds over 40 patents and has pub-lished several hundred papers. He hasreceived several awards for his work,including the Materials Research SocietyMedal in 1991, the Electrochemical Soci-ety Electronics Division Award in 1993,and was cited as “Inventor of the Year,1997” by the New York State Legislature.The US Patent Office honored him with the“United States Distinguished Inventor of theYear” award in 1999 and he received the1999 IEEE Ernst Weber Award for theleadership in the commercialization of theSi/Ge HBT technology.

The IEEE Electron Devices Society ispleased to recognize Dr. Meyerson for hispioneering work in this Si/Ge HBT technol-ogy. He has turned this laboratory activityinto an emerging technology that has beencommercialized to manufacture high-speedintegrated circuits with application in theconsumer and commercial sector of theelectronics industry.

Alfred U. Mac RaeMac Rae Technologies

Berkeley Heights, NJ

Bernard S. Meyerson

EDS Millennium Medals Award Luncheon

Robert Adler, inventor of the TV remotecontrol, receives his medal from Past IEEEPresident, Ken Laker.

The IEEE ElectronDevices Society isextremely proud of theservices that it pro-vides to its members.Its members generatethe premier new devel-opments in the field ofelectron devices andshare these results with

their peers and the world at large by pub-lishing their papers in EDS journals andpresenting results in its meetings. This is aglobal activity that is effective because ofthe efforts of numerous volunteers. Many ofthese volunteers labor in relative obscurity,with their only reward being the satisfac-tion that they receive in being an importantpart of a successful organization, namelyof the Electron Devices Society. Theyshould be thanked.

The Electron Devices Society, Distin-guished Service Award was established tohonor an outstanding volunteer each year.It is a challenge to select just one outstand-ing volunteer each year. There are numer-ous outstanding volunteers in EDS and it isa shame that they can’t all be given signifi-cant recognition. In 2000, we are pleasedto single out one of those volunteers for hiscontributions. We honor Michael S. Adleras the recipient of this award. Mike is wellknown among the active members and vol-unteers. His leadership has played animportant role in making EDS into such asuccessful Society. His achievements arenumerous. As is the case of many EDS vol-unteers, he started as a member of a tech-nical committee for the EDS flagshipmeeting of the year, namely the IEDM. Heassumed the positions of the Technical andthe General Chair in the 1981-1983 timeframe. During this period he was instru-mental in establishing the popular Sundaytutorials and the Tuesday night panel ses-sions. Subsequently, he became the EDSMeetings Chair from 1985 to 1992 andthen EDS President from 1992 to1994. AsPresident, Dr. Adler led a successful effortto increase the global outreach of the Soci-ety with the most significant accomplish-ment being the growth in the number ofchapters in Region 8 from eight in 1992 toalmost thirty-five in 1995. These activitieshave also expanded into Regions 9 and10. He initiated a series of chapter chairmeetings, which have served as a forumfor the exchange of information betweenthe chapters, the Regions, and EDS. Thereis no doubt that Mike’s efforts have result-

ed in EDS becoming a truly global society. Mike Adler has extended his outstand-

ing technical and leadership talent byassuming IEEE positions. He was electedDivision I Director in 1999. He utilized hisEDS experience in this position by leadingthe Division I Societies into more globalactivities. All the Chapters of the Division ISocieties now meet annually to shareideas. The last meeting attracted 80 peo-ple, from all over the globe. In 1999, hebecame the first elected Vice President ofthe IEEE Technical Activities Board, withoversight of the 40 Societies and Councils.In 2000, he was the Vice President of IEEEPublication Activities, an extremely impor-tant responsibility. IEEE is the largest pub-lisher of electrical and electronicengineering and related fields, with over100 journals and magazines. I expectMike will have a major influence onimproving the effectiveness of IEEE servingits members.

Dr. Adler received his BS and PhDdegrees from MIT. His PhD studies were insolid-state physics. He then joined theResearch and Development Center of Gen-eral Electric in Schenectady, NY and retiredin 2000, when he managed the ControlSystems and Electronic Technologies Labo-ratory. In this position, he directed the workof about 150 engineers and scientists.Presently, Mike is VP of Technology atMechanical Technologies where he isinvolved in the investigation of opportunitiesin renewable energy. He is also a Research

Professor at RPI, investigating advancedpower devices and associated electronics.His honors include being elected to Fellowof the IEEE in 1987 for his contributions tothe CAD of Power Semiconductor Devices.

Dr. Adler continues to live in Schenec-tady. NY, but he also spends consider-able time at his other homes in SchroonLake, NY and Jackson, WY. His wife Vir-ginia and son Jerry are the joys of hislife. He is a passionate sailor, skier, andhiker. His other interests include coin col-lecting and astronomy.

I have worked with Mike on EDS andIEEE activities for over 20 years. He is adelightful person. His technical, leader-ship and human interaction skills are out-standing. His impact on EDS and the IEEEhas been impressive. Indeed, he is thekind of person that I would like to haveliving next door to me.

I would be remiss in this write-up if Idid not encourage the readers of this arti-cle to become volunteers in EDS’s activi-ties. There are numerous opportunities foryou to work on a global, local or at theEDS level. The success of this outstandingsociety is dependent on the leadershipand activities of its volunteers. Don’t hesi-tate to contact Bill Van Der Vort, the EDSExecutive Director on [email protected]. I am sure that he will find arewarding opportunity for you.

Alfred U. Mac RaeMac Rae Technologies

Berkeley Heights, NJ


11

2000 EDS Distinguished Service Award

Michael S. Adler

EDS Chapter of the Year AwardOn December 10, 2000, at the IEDM held in San Francisco, CA, the ED/SSC

Yugoslavia Chapter received the EDS Chapter of the Year Award which included a cer-tificate and check for $1,000. The Chapter was founded at the end of 1994, and sinceits start, the number of regular members has increased from 15 to 45. Student member-ship has also grown, with the current number of members being 16. The increase inmembership would have been even more impressive, if there had not been a significantongoing flow of graduated electrical engineers to developed countries.

Since 1994, the Chapter has been steadily increasing its level of activity whichhas had a significant impact on related communities in Yugoslavia. During the pastyear, the Chapter has organized the International Conference on Microelectronics(MIEL), held an annual administrative meeting and three regular meetings (with Dis-tinguished Lecturer presentations, invited lectures, and video tape presentations),and organized a session on Microelectronics and Optoelectronics at the nationalconference, ETRAN. The Chapter coordinates a very active STAR Program with sixmajor events being held last year (plant tours, museum visits, picnics, and othersocial events). Also, the Chapter is very active in helping and participating in theactivities of the ED/SSC University of Nis Student Branch Chapter, which has held 5major events during last year.

Hiroshi IwaiTokyo Institute of Technology, Yokohama, Japan

As of January 1, 2001, there has been a restructuring of the Regions/Chapters Committee (RCC) and a planned rejuvenation of theChapter Partners Program, while the Region Champions Program has been terminated. As part of the restructuring, there have been fivenew Subcommittees for Regions and Chapters (SRCs) formed as follows:

Subcommittee Corresponding Region Chair/Vice-Chair

North America East (NAE) Regions 1 – 3, & 7 A. Y. Shibib (Chair), A. A. Santos (Vice-Chair)

North America West (NAW) Regions 4 – 6 P.K.L. Yu (Chair), S.Tyagi (Vice-Chair)

Europe, Africa & Middle East (EAM) Regions 8 M.L. Ostling (Chair), M.D. Profirescu (Vice-Chair),N.D. Stojadinovic (Vice-Chair)

Latin America (LA) Regions 9 M. Estrada Del Cueto (Chair), F.J Garcia Sanchez (Vice-Chair)

Asia and Pacific (AP) Regions 10 K. Lee (Chair), J. Vasi (Vice-Chair)

The role of each subcommittee is to help support chapter activities by discussing with the chapters the most appropriate partners to beassigned to each respective chapter and organizing to have the partners and distinguished lecturers visit the chapters. It is expected thatthis new structure will form closer relations between EDS and its chapters.

Hiroshi IwaiTokyo Institute of Technology

Yokohama, Japan


12

Regional Chapter Coordination Program

ObituariesD. Stewart Peck

Stewart Peck wasborn on October 19,1918, in Grand Rapids,MI, the son of Arthurand Ruby Peck. Mr.Peck received his BSEEand MSEE degrees fromthe University of Michi-gan in 1939 and1940. He began hiscareer at General Electric Company. In1947 he joined the Bell Telephone Laborato-ries, Allentown, PA. He retired from Bell Labsin 1980.

Mr. Peck died on January 9, 2001, inChelsea, MI. Services were held on Janu-ary 13th in Chelsea. Donations are beingreceived at the Ann Arbor Hospice, 2366Oak Valley Drive, Ann Arbor, MI 48103.

Mr. Peck became the Department Headin charge of the semiconductor reliabilitygroup when it was formed in 1958. Hisleadership promoted the active use ofaccelerated testing, including 24-hour lifeacceptance tests at 280 °C.

This activity promoted the use of acceler-ated stress by vendors, through the pur-chase specifications. For accurateevaluation, he prepared nomographs andgraph papers to facilitate the use of the log-

normal life distribution and the Arrheniusrelationship for accelerated temperature.

The new procedures, based on the log-normal distribution, were used on all BellSystem devices, providing confidence inthe techniques. They have been used in allmechanisms found, such as ionic contami-nation, chemical and electrolytic corro-sions, electromigration, and oxidebreakdown. He has taught this topic tohundreds of engineers worldwide for over20 years.

Mr. Peck has been active in the IEEE.He was a member of the Board of Direc-tors of the International Reliability PhysicsSymposium (IRPS) representing the Reliabil-ity Society, and was General Chairman ofthe 1972 IRPS.

In 1979, Mr. Peck received anAward from the IRPS, “In recognition ofhis pioneering efforts in the field of Reli-ability Physics and on behalf of thisSymposium.”

Mr. Peck is a Life Fellow of the IEEE. Hewas an associate of Technology Associ-ates, 1978-99. He is an author of manypapers and the Accelerated Testing Hand-book (Editions: 1978, 1987, & 1991).

His children, Donald Peck and Priscil-la Peck Dunn, three grandchildren, andtwo great-grandchildren survive him.

Keats A. Pullen,Jr. ED, PE

Dr. Keats A. Pullen,84, a renowned schol-ar, died of shock trau-ma as the result of afall. Dr. Pullen wasborn in Onawa, IA, inNovember 1916. Heattended schools in

Los Gatos, CA, followed by a B.S. inphysics from the California Institute of Tech-nology, Pasadena, CA, in 1939. Hereceived his Doctorate in Engineering fromJohns Hopkins University in 1946 andbecame a licensed professional engineerin Maryland in 1948.

Dr. Pullen started working at the Ballis-tics Research Laboratory (BRL), AberdeenProving Ground, MD, in June 1946,where he remained until 1978. He trans-ferred from BRL to the U.S. Army MaterialSystems Analysis Activity (AMSAA) in1978, and worked until his retirement fromthe Army in 1990.

While working at BRL and AMSAA, Dr.Pullen designed and evaluated designs fora wide range of electronic systems for mili-tary use, such as DOVAP, DORAN, EMA,a drone program, satellite systems, Have-name, and many other systems.

Keats A. Pullen, Jr.D. Stewart Peck

During his years working at AberdeenProving Grounds, he was also on the facul-ty of several universities where he taughtcollege courses in engineering. Theseincluded the Pratt Institute, University ofDelaware, and Drexel University.

Dr. Pullen was a Life Fellow of the Insti-tute of Electrical and Electronics Engineers,President of the Aberdeen Chapter ofArmed Forces Communications and Elec-

tronics Association, member of ADPA,AUSA, Association of Old Crows, and Sig-ma Xi. In 1982, he received the MarconiMemorial Medal from the Veteran WirelessOperators Association.

During his lifetime, Dr. Pullen pub-lished nine books, more than 25 reports,and many more papers and letters. Healso was the holder of six patents. Hewas active in developing improved com-

munication systems for the Special Opera-tions Forces, Airland Battle 2000, anddeveloping improvements for groundingfor the Army to protect the ever-increas-ingly more delicate systems that supportthe U.S. Military.

Dr. Pullen is survived by his wife, Dr.Phyllis K. Pullen, four sons, Peter, Paul,Keats III, Andrew, his daughter VictoriaLeonard, and seven grandchildren.


13

UCSD ED/LEO Student ChapterThe University of

California at SanDiego ED/LEO Stu-dent Chapter wasfounded in April2000. The Chapter isorganized as follows:Chapter Chair Rebec-ca Welty, Vice-ChairYimin Kang, Treasur-er, Masaya Iwamoto,

and Secretary, Jessica Fischer; our Advisoris Prof. Paul Yu. A joint Electron Devicesand Lasers and Electro-Optics Chapter waschosen for two main reasons: increase stu-dent participation and increase studentinteraction in these two very similar disci-plines. Students frequently interact withintheir own research groups but seldombetween research groups, unless they areon a joint project. In many instances weuse the same software, fabrication tools,and test equipment. With increased stu-dent interaction, students will have moreopportunities to learn from each other.

The Chapter’s current activities includetechnical seminars and student recruitment.Currently we are holding quarterly techni-cal seminars. In the summer of 2000, Prof.Dalma Novak of the University of Mel-borne, Australia, gave an impressive semi-nar where she overviewed the researchactivities for future optically fed millimeter-wave radio communication systems. Stu-dents had expressed an interest to havetalks from companies to learn more aboutwhat companies are doing and what arethe opportunities for them. In the Fall of2000, Dr. Don D’Avanzo from AgilentMicrowave Technology Center, SantaRosa, CA, USA, gave a seminar on GaAsHBT and HEMT technologies for Agilentinstruments. Interested students also hadthe opportunity to meet with Dr. D’Avanzoto talk about employment opportunities at

Agilent, Santa Rosa. These two seminarswere very successful. Approximately 50people attended each of the seminars.

In the Fall of 2000, we had a recruit-ment drive where we discussed the advan-tages of becoming involved in an IEEEprofessional society: keeping up to datewith research by reading Letters and Trans-actions, keeping up to date with SocietyNewsletters where readers can find themost up to date conference listings, andmost importantly, to have a forum to net-work with researchers both at UCSD andfrom other institutions. Our chapter startedwith 12 student members and at the mem-bership drive we had 16 IEEE EDS or LEOsmembers and 12 non-members participate.To date, about 50% of the non-membershave joined either ED or LEO societies,most of them enrolling via the webpage.Currently, all of the student members areGraduate Students in Electrical Engineer-ing (EE). Further work will be done torecruit undergraduate students in EE andstudents from other departments.

The Chapter is currently planning out-reach programs for the Winter 2001 quar-ter with the Preuss School. The PreussSchool opened in 1998 as a collegepreparatory school on the UCSD campus.The School currently holds sixth throughninth grade with 419 students and willadd one grade each year until twelfthgrade is filled. The target enrollment of700 will be achieved in 2004. Studentscome from low-income families and arechosen from a lottery once they pass theinitial screening. The goal of this school isto have each student be the first in theirfamily to attend college. A subset of theUCSD ED/LEO Student Chapter will partic-ipate with the Preuss School. Members ofthe Chapter will mentor them in a roboticscompetition, “botball”. In this game stu-dents design, build, and program their

robot to score points by placing balls inspecified positions. Students will gainexperience in programming, engineering,and teamwork. After the competition therewill be another meeting with the group ofstudents to discuss the engineering fieldand opportunities there are in the field,hold lab tours, and view some of the video-tapes that are available from the EDSVideotape Lending Library, which are tar-geted for the STAR program.

The Chapter is also planning activitiesfor 2001. We will continue to have quar-terly seminars and hold recruitment drives.The Chapter plans to take advantage ofthe Distinguished Lecturer (DL) program,and is anticipating having at least one DLcome to UCSD in 2001. We also plan tohave some of our technical seminarsinclude the IEDM short course videotapes,which are available from the EDS Video-tape Lending Library.

I had the pleasure of attending the EDSAdcom Meeting and EDS Regions 1-7 & 9Chapters Meeting in San Francisco, CA,USA, on December 10, 2000. I found theChapters Meeting to be particularly usefulin hearing other Chapters activities andalso talking to other Chapter Chairs aboutsimilar problems in their Chapters, such asgetting students involved when free timeseems to be such a scarce commodity. Inmy very short experience with the StudentChapter I have already found it to be arewarding experience and hope manymore people will find the time and oppor-tunity to get involved.

If you have any suggestions or wouldlike any other information about ourChapter please contact me at [email protected].

Rebecca J. WeltyUniversity of California, San Diego

San Diego, CA

Rebecca J. Welty


14

The ED Malaysia Chapter Meeting washeld in Guoman Port Dickson on Novem-ber 12, 2000, in conjunction with the2000 IEEE International Conference onSemiconductor Electronics. The purpose ofthe meeting was to better understand EDSoperations and to discuss how EDS couldhelp the Malaysia Chapter. ProfessorBurhanuddin Yeop Majlis the ChapterChairman, Dr. Sahbudin Shaari, TechnicalProgram Chairman, Mr. Ibrahim Ahmad,the Treasurer, Mrs. Badariah Bais, the Sec-retary, Mr. Rahman Wagiran, Mr. Bam-bang Sunaryo Suparjo, Farizah Saharil,and Hiroshi Iwai attended the meeting.The meeting began with an overview ofEDS given by Professor Iwai followed by asummary of the Malaysia Chapters activi-ties by the Chairman of the ED MalaysiaChapter, Professor Burhanuddin YeopMajlis. There are two main activities orga-nized by the ED Malaysia Chapter everyyear: on the odd years it is the NationalSymposium on Microelectronics (NSM)and on the even years it is the InternationalConference on Semiconductor Electronics(ICSE). For the year 2000, the EDMalaysia Chapter took advantage of the

EDS Video Tape Lending Library Program,by showing the two IEDM video shortcourses, MBE and MOCVD: New Struc-tures and Devices and Advance DeviceCharacterization and Test Methodologies.Both short courses were held at the Facultyof Engineering, Universiti KebangsaanMalaysia and attended by more than 24participants. The ICSE 2000 attracted 82participants and 52 paper presenters.

Three main program issues highlightedin the meeting were the distinguished lec-

turer program, the EDS subsidy, and IEEEmembership. There are not a sufficientnumber of distinguished lecturers in theAsian region who can visit Malaysia. Iwaitold of his plan to increase the number oflecturers in the Asian countries. TheMalaysia Chapter proposed to ProfessorIwai that the annual EDS subsidy beincreased to US $2000, especially to achapter which has proven active in run-ning a conference. With a membershippromotion, it is difficult to attract an engi-neer to become an IEEE member due tothe high membership fees. The reduction ofthe fees for electronic subscription shouldbe seriously considered for Asian countrieswith low average incomes. These itemswere reported and discussed at theRegions/Chapters Committee Meetingheld this past December in San Francisco.


Yokohama, Japan

Burhanuddin Yeop Majlis University Kebangscan Malaysia

Selangor, Malaysia

ED Malaysia Chapter Meeting Report

From left: Badariah Bais, Farizah Saharil, Prof.Hiroshi Iwai, Prof. Burhanuddin Yeop Majlis,Rahman, Dr. Sahbudin Shaari, Ibrahim Ahmad andDr. Bambang Sunaryo Suparjo.

Summary of Changes to the EDS Constitution & BylawsAt its 10 December 2000 Meeting, the EDS AdCom

approved changes to the EDS Constitution and Bylaws. A sum-mary of these changes is indicated below. The complete Consti-tution and Bylaws may be obtained from the EDS ExecutiveOffice.

Constitution

Article V/Section 9Change the voting rights of Technical Committee Chairs from ex-officio members without vote to ex-officio members with vote.

Bylaws

Section 7/Executive OfficeChange the title of IEEE Staff Director for Technical Activities toIEEE Managing Director for Technical Activities as implemented byIEEE in May 1995.

Section 12.1/Technical CommitteesChange the terms of the members of technical committees fromone-year renewable terms to two-year renewable terms asapproved by AdCom in October 1999. Furthermore, change therenewable number of terms for chairs from one to an unlimitednumber.

Section 13/Standing CommitteesChange the terms of the members of standing committees fromone-year renewable terms to two-year renewable terms asapproved by AdCom in October 1999.

Section 13.2 (Part C)/Meetings CommitteeDelete the part of section 13.2 (Part C) which states that the DRCchair will be an ex-officio member of the EDS AdCom without voteand a member of the Meetings Committee, as per both theAdCom vote in 1997 to eliminate Meeting Liaison positions andthe reorganization of the Meetings Committee in 1999.

Section 13.3/Sections/Chapters CommitteeChange the name of the Sections/Chapters Committee to theRegions/Chapters Committee as per the restructuring of the Chap-ters Committee in 1996.

Section 13.9/ International Technical Activities CommitteeDelete section 13.9 as the committee was eliminated as per therestructuring of the Chapters Committee in 1996.

Steven J. HilleniusAgere SystemsMurray Hill, NJ


15

Congratulations to the EDS Members Recently Elected to IEEE Senior Member Grade!

Barry R. Allen Arturo A. Ayon Henry Baltes Mohammed M. BanatPatricia Beck Romuald B. Beck Kristin M. de Meyer Numan Sadi DoganMonuko M. du Plessis Klaus Frank Minka D. Gospodinova-Daltchena Cynthia M. HansonTodd Hiemer Richard Hornsey James Irvine * Kinam KimCan E. Korman Byoungho Lee Chewee Liu Chun Ting LiuJan M. Lysko Chris A. Mack Karen E. Moore Tadahiro OhmiWillem J. Perold Yuri Poplavko James A. Power Elyse RosenbaumJerzy Ruzyllo Peter Sandborn Jong-in Song Zoran StamenkovicOleg V. Stoukatch Pieter L. Swart Kazuo Yano Isao Yoshida* = Individual designated EDS as nominating entity

If you have been in professional practice for 10 years, you may be eligible for Senior Membership, the highest grade of member-ship for which an individual can apply. New Senior members receive a wood and bronze plaque and a credit certificate for up toUS $25 for a new IEEE society membership. In addition upon request, a letter will be sent to employers, recognizing the new sta-tus. For more information on senior member status, visit http://www.ieee.org/membership/gradescats.html#SENIORMEM. Toapply for senior member status, fill out an application at http://www.ieee.org/organizations/ rab/md/smelev.htm.

2000 EDS Regions 1-7 & 9 (US, Canada & Latin America)Chapters Meeting

The Electron Devices Society held its 5thAnnual Regions 1-7 & 9 (US, Canada &Latin America) Chapters Meeting on Sun-day, December 10, 2000, in conjunctionwith the International Electron Devices Meet-ing (IEDM) in San Francisco, CA. This meet-ing provides a forum for EDS chapter chairsto meet one another as well as the IEEE staffand EDS AdCom members. It is an opportu-nity for the chapters to share their experi-ences and practices, as well as express theirneeds and concerns to the AdCom mem-bers. This year’s meeting was co-hosted byHiroshi Iwai, EDS Regions/Chapters Com-mittee Chair, and Paul Yu, EDS AdComelected member. Fifty-six representativesfrom 21 chapters attended.

After the opening remarks, Hiroshi Iwaiannounced the new Subcommittees ofRegions/Chapters Committee (SRC) andtheir goals. Emily Sopensky, the EDS ShortCourse Manager, then gave an overview ofthe EDS Short Course Program, followed byJames Kuo’s presentation about the newSenior Member and new Membership FeeSubsidy programs. Arlene Santos gave abrief presentation informing meeting atten-dees of all the chapter resources avail-able on the web at http://www.ieee.org/organizations/society/eds/chapter.html.The ED/SSC Yugoslavia EDS Chapter of theYear was announced and the ChapterChair, Ninoslav Stojadinovic, gave a

detailed account of the chapter activities. Aseries of chapter reports was then given:ED/LEO University of California, San DiegoStudent Branch Chapter by Rebecca Welty,C/ED Maine Chapter by David Potts,CAS/ED/CPMT/LEO Toronto Chapter byTed Sargent, and ED CINVESTAV-IPN Stu-dent Branch Chapter by Jose LuisDominguez.

After the chapter reports, Paul Yu mod-erated an open discussion among theparticipants. The discussion centered onhow to support and promote chapteractivi t ies. Al though the at tendeesexpressed that they were very pleasedwith the EDS Videotape Lending Library,it was mentioned that it would be good ifsome additional materials were madeavailable, e.g. the newly establishedvideos from the EDS Independent ShortCourses Program. The Distinguished Lec-turer Program (DL), though popular, is notbeing utilized by a significant number ofchapters, especially those located inregions that have fewer DLs. It was rec-ommended that chapters physically locat-ed near each other make jointarrangements for a DL to present talksand also to take advantage of the DL trav-el funding available. It was commentedthat the DLs should request the societyoverview presentation currently availablefrom the EDS Executive Office, so that

during their chapter visits, they can briefthe chapter about the Society and its vari-ous benefits to the members.

To enhance chapter meeting atten-dance, it was suggested that joint activitieswith other chapters or societies should beencouraged which will also serve as a net-working opportunity for members. The gen-eral consensus among the attendees wasthat the selection of the topic of the lecturewas vital to the meeting attendance. Cur-rent topics such as devices related to wire-less and fiber optics communications canattract a large audience. Realizing thatmembership growth is closely linked to stu-dent membership development, there weremany suggestions made to attract new stu-dents to join IEEE and attend student chap-ter meetings and to encourage non-studentmembers to come to their respective chap-ter meetings as well. The suggested ideasincluded giving students academic creditfor attending DL lectures, inviting DLs to actas guest lecturers for scheduled seminars,and setting chapter meeting times to beconvenient for local members.


Yokohama, Japan

Paul K.L. YuUniversity of California

San Diego, CA


16

Regional and Chapter News

USA, Canada and LatinAmerica (Regions 1-6, 7 & 9)Vacuum Electronics Alive and Well- A Summary of the FirstInternational Vacuum ElectronicsConference (IVEC)

With nearly 400 participants fromindustry, government and academia fromalmost 20 countries, the first InternationalVacuum Electronics Conference (IVEC)burst into life in Monterey, CA, on May 2,3 and 4, 2000. IVEC 2000, sponsored bythe IEEE Electron Devices Society (EDS),attracted the largest vacuum electronicsaudience in decades. While the explosivegrowth of electronics in the last half centu-ry has been in the area of solid statedevices, vacuum devices are still widelyused for displays and for high power andhigh frequency applications, such as satel-lite communications, radar and electroniccountermeasures (ECM). “The response toIVEC 2000 is a clear indication of the con-tinued vitality of vacuum electronics,” saidJim Dayton, Director of Technology forHughes Electron Dynamics (HED), Tor-rance, CA, who served as General Chairof IVEC 2000.

The conference commenced with a Ple-nary Session led by Dayton, who wel-comed the participants to Monterey andintroduced the members of the IEEE EDSTechnical Committee on Vacuum Devices,who had organized the conference. Threespeakers who focused on “The Status ofthe Vacuum Electronics Industry” followed.Jon Christensen of HED, representing theUS Electronic Industry Association, spokefor the United States. Takao Kageyama ofNEC followed by giving an overview ofthe industry in Asia. Georges Faillon ofThomson Tubes Electroniques (TTE) con-cluded with a description of the situation inEurope. All three described an industrythat is experiencing nearly flat militarysales, but dynamic growth in commercialopportunities.

The next three speakers addressed morespecifically “New Commercial Opportuni-ties in Vacuum Electronics.” Ivor Brodie ofSRI International spoke on what hasbecome the most ubiquitous vacuum devicetoday, the display tube. Brodie particularlyemphasized the prospects for conventional

cathode ray tube (CRT) technology to beovertaken by thin panel displays, many ofwhich will continue to be comprised of vac-uum tubes using field emission cathodes.Walter Wood of Xicom Technologydescribed growing markets for vacuumdevices in terrestrial communications bothfor satellite uplinks and for wireless telepho-ny and communications systems. The finalspeaker on this topic, Kevin Mallon of LoralSpace Systems, described how the travel-ing wave tube (TWT) has become the domi-nant amplifier for commercial spacecommunications because of its reliability,efficiency and power handling capabilities.With the assistance of the TWT, he fore-casted that with the implementation of digi-tal radio in the near future, a travelerdriving from Los Angeles to New York Citycould listen to the same radio station for theduration of the trip!

The final topic in the Plenary Sessionwas a panel discussion on “Training theNext Generation,” moderated by NevilleLuhmann of the University of California(UC), Davis. The panelists described suc-cessful programs merging the needs ofacademic institutions, industry and govern-ment to provide students with credibletraining and realistic career opportunities.The audience reaction to the panel discus-sion indicated that the hiring outlook in thevacuum electronics industry parallels itsrecent dynamic growth.

The highly successful IVEC is sched-uled to repeat every other year in theUSA, rotating to Europe and Asia inevery fourth year. IVEC 2001 will beheld in Noordwijk, The Netherlands, onApril 2, 3 and 4, sponsored by the Euro-pean Space Agency (ESA). In 2002,IVEC will return to Monterey and in2003 it will be held in Korea. IVECevolved from the Monterey Power TubeConference, which had been sponsoredby the US Department of Defense since1978 and formerly had been restrictedto U.S. participants.

Additional technical highlights are sum-marized at www.ewh.ieee.org/soc/eds/ivec. Selected extended articles fromIVEC 2000 will be published in January2001 in a Special Issue of the IEEE Trans-actions on Electron Devices.

—Ayman Shibib, Editor

CAS/ED Pikes Peak Chapterby Gerald Oleszek

The CAS/ED Chapter of IEEE PikesPeak Section 5 held two technical meet-ings during the 4th quarter, 2000. The firstpresentation, on October 24, was entitled“SiGe HBT Technology and Applications:An Overview” and was presented by Mr.Don Herman, Senior Design Engineer, Lin-ear Technology Corporation, ColoradoSprings, CO. The talk was well receivedwith over 25 people in attendance.

The second presentation, on November7, was entitled “The Evolution of Capaci-tor Technology” and was presented by Dr.Elliott Philosflky, former president of Tea-gal Corp. and former vice-president ofAUX and Ramtron Corporations. The pre-sentation traced the evolution of capacitortechnology to its current use in advancedmicroelectronic technologies as ferroelec-tric nonvolatile memory devices. TheCAS/ED Chapter is also planning futuremeetings focused on emerging areas inSolid State Microelectronics. The Chapteris also organizing a Solid State Sessionfor the Region 5 Technical Conference2001 to be held in April 2001.

—Charles Yarling, Editor

Colloquium Entitled “Future Trendsin Microelectronics”

There will be a colloquium entitled“Future Trends in Microelectronics” to beheld in Guadalajara, Mexico, on Novem-ber 17, 2001. It is organized by the EDSchapter of Mexico DF and the studentchapters of CINVESTAV DF and CINVES-TAV Guadalajara. Three topics will bepresented: CMOS Technological prob-lems for downsizing by Dr. Hiroshi Iwaifrom the Tokyo Institute of Technology;State of the Art and perspectives of pow-er devices and IC by Dr. Ayman Shibibfrom Agere Systems; and Trends in LowCost Electronics by Dr. Sigur Wagnerfrom Princeton Univeristy. Inscription isfree for EDS chapter members. For otherattendees, the registration fees are as fol-lows: IEEE Members $150 U.S.; IEEE Stu-dent Members $50 U.S.; Non-IEEEMembers $3000 U.S.; and Non-IEEE Stu-dent Members $100 U.S. Notes will beprovided for all attendees. For aditionalinformation, contact: Dr. Magali Estrada,


17

SecciÛn de ElectrÛnica del Estado SÛlido(SEES), Departamento de IngenierÌaElÈctrica, CINVESTAV IPN, Av. IPN No.2508, Apto. Postal 14-740, 07300 DF,MÈxico. TEL: 52-5 7473800 ext. 3121,FAX: 52-5 747 2114, E-Mail: [email protected]

—Adelmo Ortiz-Conde, Editor

Europe, Middle East &Africa (Region 8)ED/MTT/AP St. Petersburg Chapterby Sergei Zagriadski

The Chapter activities during the sec-ond half of 2000 were as stated below.

Two seminars were organized by theSt. Petersburg State Technical University inJuly: Dr. V. V. Yatsenko reported on “Elec-tromagnetic diffraction by double arrays ofdipole scatterers” and Dr. A. G. Rezvanovreported on “Space filtering of microwavesignals using magnetostatic waves”.

Under the Distinguished Lecturer Pro-gram, an invited lecture by IEEE Fellow Dr.Saj Durranin on Satellite Communicationswas held on October 2, 2000. The lecturewas organized by the St. Petersburg StateElectrotechnical University and was dedi-cated to communication systems, technolo-gies, and services available throughsatellites at domestic, regional and interna-tional levels and to new systems for person-al communications.

An all-Russia student conference inradiophysics was held in Peterhoff onDecember 5-7, 2000. It was organized bythe St. Petersburg State University and theSt. Petersburg State Technical University(see conference Web page http://radio.stu.neva.ru/studconf.htm). Over 60participants attended the conferenceincluding 45 students from 10 universitiesand higher-education institutes of 8 citiesof Russia. Nine students received bestpaper monetary awards from the St.Petersburg ED/MTT/AP Chapter. Threeparticipants—Yuri Antonov (St. PetersburgState Electrotechnical University), VictorSdobnjakov (Nizhny Novgorod State Uni-versity) and Stanislav Voinich (St. Peters-burg State Technical University)—werealso awarded free IEEE membership forthe year 2001 and diplomas from theED/MTT/AP St. Petersburg Chapter.

The traditional student conference“Week of Science” was held on December7, 2000, at the St. Petersburg State Techni-cal University, where also a moving exhibi-tion of IEEE materials was organized.

For further information about confer-

ences annually organized in St. Petersburgand its region, please contact Prof. SergeiZagriadski (E-Mail: [email protected]).

MTT/ED/AP/CPMT Saratov-PenzaChapterby Michael Davidovich

The end of 2000 in Saratov was rich inscientific events and has been marked byseveral big technical meetings. The mainevent was the Fourth International Confer-ence, “Actual Problems of Electron DeviceEngineering” (APEDE 2000), held at Sara-tov State Technical University (SSTU), Sep-tember 20-22. This Conference is biennial,and the next one will be held in 2002.More than 130 papers were submittedand more than 150 participants haveattended the Conference. The ConferenceProceedings have been published in Russ-ian with the Abstracts in English. It wasorganized by Saratov State Technical Uni-versity, Ministry of Full and ProfessionalEducation of Russia, Ministry of Educationof Saratov Region, IEEE MTT/ED/AP/CPMT Saratov-Penza Chapter, andsponsored by IEEE EDS, Enterprise TORY(Moscow), and Enterprise CONTACT(Saratov). The Scientific Program includedpapers on Microwave Electronics,Microwave Theory and Technique, Imple-mentation, Technology, Manufacture forMicrowave, Electron Devices and Instru-ments Application and Technology, andEducation in Electronics.

The second event was the Fifth ChapterWorkshop “CAD and Numerical Methods inApplied Electrodynamics and Electronics,”which was held day after the APEDE’2000at SSTU (September 23, 2000). There wereabout 45 participants and 22 reportedpapers as oral presentations. The Workshopwas solely organized by the Chapter andchaired by Prof. M.V. Davidovich.

The International Conference, “Problemsof Communication and Control” (PCC’2000,September 20-22, 2000, SSTU), chaired byProf. V.A. Kolomeytsev, was organized inconjunction with APEDE’2000. There were55 participants. The Conference was co-organized by the Chapter.

The fourth action was the School-Con-ference, “Nonlinear Days in Saratov forYoung Scientists” (NDSYS 2000, October16-20, 2000). The conference was orga-nized by Saratov State University and sup-ported by the Chapter. ConferenceChairman was Prof. D. I. Trubetskov, rectorof Saratov State University. The goal of thisSchool-Conference was to involve thegraduate and post-graduate students andscholars into the problems of nonlinear

dynamics. There were 86 participants.Finally, the Second International Confer-

ence, “Fundamental Problems of Physics,”was held at Saratov State University, Octo-ber 9-14, 2000. About 240 reports havebeen presented and more then 250 partici-pants have attended the conference. Theconference was organized by the Ministryof Education of Russian Federation, SaratovState University, Program “Universities ofRussia” Scientific center “College”, underthe support of the Russian Foundation ofFundamental Research and IEEE MTT/ED/AP/CPMT Saratov-Penza Chapter.

All reported events were very success-ful, useful for personal contacts, and aimedat improvement of cooperation and scien-tific exchange in different areas. For furtherinformation, please contact Prof. MichaelDavidovich (E-Mail: [email protected]).

ED/COM/AP/MTT/EMC TomskChapterby Oleg Stoukatch

The IEEE activity in the Siberia Region ischaracterized by the words “slowprogress”. International conferences havebeen held since 1995 for motivation of sci-entists and specialists and to attract themto join IEEE. The last, the Sixth InternationalScientific and Practical Conference of Stu-dents and Young Researchers “ModernTechniques and Technology” (MTT-2000),was held at Tomsk Polytechnic UniversityFebruary 28–March 3, 2000. This confer-ence, co-sponsored by EDS and supportedby the Novosibirsk Joint Chapter, offeredthe opportunities to learn and share infor-mation on the latest advances in tech-niques and technology.

An increased interest in the Tomsk con-ferences has been clearly observed. Whilethe SIBCONVERS-1995 conference hostedabout 50 participants, MTT-2000 atten-dance was about 300 from 5 countries.The invited and regular papers were pre-sented in 6 oral sessions, each sessionaddressing key problems of modern elec-tronic devices, radar, and modern manu-facturing technologies, as well as somerelated topics about photo-refractive effectsin crystalline media. These papers werepublished in a Proceedings, officially regis-tered as an IEEE edition. Several activeconference participants, both engineersand students, have been awarded for thebest papers.

The workshop on ultra-wide bandradar was held at the SIBCONVERS sym-posium. At the workshop, ProfessorJames Taylor, well-known American spe-


18

cialist in the radar field, editor and co-author of the book “Introduction to Ultra-Wideband Radar Systems”, gave a shortcourse for students, post-graduate stu-dents, and young researchers. Thecourse was very successful.

On the 1st of October, OlegStoukatch, the Tomsk Chapter Chair, tookan active part in the 2000 IEEE DivisionsI & IV Region 8 Chapters Meeting inParis. It was an excellent opportunity toget acquainted with chapter activity inRegion 8 and to meet colleagues.

This year, our Chapter held two techni-cal meetings with the Student Branch,which was established on June 14, 2000.Our common aim is to attract new IEEE stu-dent members. Complete information onour activities is available at the web sitehttp://me.tusur.ru/~tieee/index.htm, cre-ated by Victor Sidorenko—the best webmaster in Tomsk. For further informationplease contact the Chapter Chair, OlegStoukatch, (E-Mail: [email protected]).

MTT/ED/AP/CPMT/SSC WestUkraine Chapterby Mykhaylo I. Andriychuk

For its current activities the WestUkraine Chapter in 2000 won the IEEECPMT Society 1999 Chapter of the YearAward. Mrs. Olga F. Zamorska, ChapterSecretary, received the special bannerfrom the CPMT Society at the IEEE DivisionI & IV Region 8 Chapters Meeting inParis, France, on October 1, 2000.Recently our Chapter organized 8 meet-ings with technical and scientific subjectsof interests to its members. The most inter-esting of them were:

• September 25, 2000: “The antennasynthesis according to the prescribedpower directivity pattern,” Dr. Petro O.Savenko, Institute for Applied Problemsof Mechanics and Mathematics ofNASU, Lviv, Ukraine.

• October 3, 2000: “Numerical analysisof AC losses in transmission lines com-posed of round wires,” a DistinguishedLecturer Program presentation given atthe Physico-Mechanical Institute ofNASU, Lviv, Ukraine, by Prof. AkiraMatsushima, Dept. of Electronics andComputer Engineering, KumamotoUniversity, Kumamoto, Japan.

• October 11, 2000: “Modeling themulti-layered contacts for integratedschemes,” Dr. R. Korzh (speaker), L.Zakalyk, I. Danchyshyn, National Uni-versity; “Lvivska Politechnika,” Lviv,Ukraine.

• December 13, 2000: “Analysis of

reflection of electromagnetic waves bymulti - layered arrays of complexshaped elements. Application to elec-tronically controllable PBG”, Prof.Sergey L. Prosvirnin, Insti tute ofRadioastronomy of NASU, Kharkiv,Ukraine.

In addition, the educational course“Reactive Laser Technologies” was givenby Dr. Dmytro I. Popovych, Institute forApplied Problems of Mechanics andMathematics of NASU. Topics of thecourse were fundamentals of reactivepulsed technology; mechanics of reactivepulse laser sputtering; diagnostic andcharacteristic of laser-produced plasmas;process characteristics and film propertiesin reactive laser plasma deposition.

Among the other activities, the mostimportant was the Fifth International Semi-nar/Workshop on Direct and InverseProblems of Electromagnetic and AcousticWave Theory (DIPED-2000), organizedtogether with the IEEE MTT/ED/AP/EMCRepublic of Georgia Chapter on October3-6, 2000, at Tbilisi State University, Tbil-isi, Georgia. A total of 26 papers fromGeorgia, Germany, Poland, Russia, Tai-wan, Ukraine, and USA were presentedat the Seminar in five oral sessions. Themost interesting presentations were follow-ing: G. Sh. Kevanishvili, “On the theory ofHallen integral equation”; B. Z. Katsene-lenbaum “The antenna shape in the linefor the microwave power transmission bya long beam”; P. O. Savenko “Aboutstructure of solution of the nonlinear syn-thesis problem of linear antenna accord-ing to the prescribed power directivitypattern”. The DIPED-2000 Proceedingswere published before the event andincluded in the IEEE Book Broker Program.The DIPED-2000 traditional awards foryoung speakers recognized A. Geonjianfor the “Non-uniform conforming meshgenerator for FDTD scheme in 3D cylindri-cal coordinate system”, K. Tavzarashvilifor the “The method of acoustic and EMwaves field visualization and based on itexperimental setup for ultrasonic tomogra-phy”, and Yu. V. Kasyanyuk for the “Cal-culation of singular and hypersingularintegrals in scalar diffraction problem”.The next DIPED will be organized at Insti-tute of Applied Problems of Mechanicsand Mathematics, Lviv, Ukraine, on Sep-tember 18-20, 2001.

Our plan for future activities includefinancial support from the Chapter budgetfor 15 IEEE Student Members and therecruitment of 3-4 new IEEE members,organization of 10-15 technical meetings

with scientific subjects of interest to Chap-ter members and 3 educational courses asa special lecture series, organization ofthe 6th International Conference on theExperience of Designing and Applicationof CAD Systems in Microelectronics(CADSM-2001) at National University“Lvivska Poli technika” (NULP) Lviv,Ukraine, on February 12-17, 2001, website: http://www.polynet. lviv.ua/CADSM200/, etc.

For fur ther information on theMTT/ED/AP/CPMT/SSC West UkraineChapter, please visit http://www.ewh.ieee.org/soc/cpmt/ukraine.

ED/MTT/CPMT/SSC Central Ukraine Chapterby Yuri Poplavko

Our Chapter was organized in theyear 1996 due to the EDS and MTTS ini-tiative to include the countries of FormerSoviet Union in the IEEE. It was the secondIEEE Chapter in the Ukraine, and we start-ed from 16 members from Ukrainian citiesof Kiev, Odessa, Kharkov, Donetsk andSevastopol. Later our Chapter was associ-ated with other IEEE societies: CPMTS(1998) and SSCS (2000), and we nowhave 34 IEEE members. Historically, in theUkraine there was a remarkable successin the area of telecommunication. That iswhy we now work with the IEEE ComSocin order to add 7 new IEEE members tothe Central Ukraine Chapter.

The Central Ukraine Chapter is locatedat the National Technical University ofUkraine (NTUU). Previously, it was KievPolytechnic Institute which was founded in1898 by a famous Russian scientist DmitriyMendeleev who invented the periodictable of chemical elements. Currently,NTUU has more than 30,000 students andabout 100 departments that cover theUkrainian industry interests. The electronicfaculty of NTUU has 12 departments andinstitutes in the area close to EDS (depart-ments of Electronic Devices, Microelectron-ics, Semiconductor Devices, CAD inElectronics, Biomedical Electronics, Instituteof Applied Electronics, etc.).

It is worth mentioning that, nowadays,most Ukrainian technical universities haveto use old scientific and technologicalequipment, and that is why we have adecreased possibility in practical applica-tions of their elaboration. It is well knownthat Ukraine now is in a deep economicand political crisis, and the Ukrainian edu-cation system faces great difficulties. How-ever, in spite of this, Ukrainian educationin electronics is directed to the expected


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future progress. This is one of the reasonsthat basic points of teaching in microelec-tronics are fundamental mathematics andphysics, computer simulations of electron-ics devices, and foreign language (Eng-l ish), of course. Present and futuresophisticated electronic systems willrequire engineers with a higher degree offundamental knowledge. The stage for fun-damental knowledge in Ukraine was his-torically set on good school education aswell as on high level and experience ofthe teaching staff in the fundamentalknowledge of the electronics area.

We see the goals of the CentralUkrainian Chapter in the propagation oftechnical and scientific information as wellas in the organization of technical meet-ings and conferences in accordance tointerests of chapter members. IEEE soci-eties are supporting us by the latest jour-nal issues, conferences information,CD-ROMs, etc. This support is extremelyuseful because our universities cannotafford the foreign literature.

Electronic Devices isone of the major topics inUkrainian electronics. Theinternational workshop,“Progress in Semiconduc-tor-on-Insulator Structuresand Devices Operating atExtreme Conditions,” wasorganized in Kiev,Ukraine, October 15-18,2000. The meeting wasannounced in IEEE ElectronDevice Letters. The host wasthe Institute of Semiconduc-tor Physics, National Acad-emy of Sciences ofUkraine. More than 100scientis ts from variouscountries took part in thisWorkshop.

One month before, in September2000, our Chapter organized the Interna-tional Conference “Microwave Telecommu-nication Technology” with the Workshop“Integrated Microwave Telecommunica-tion Systems” in the Southern part ofUkraine (Crimea, town of Sevastopol).This conference was established lastyear as well, and it will be annual. Morethan 150 participants from Russia,Ukraine, Byelorussia, USA, England,South Korea, Turkey, etc., took part inthis conference. The two-volume Confer-ence Proceedings contained more than250 reports.

In 2000, several members of the Cen-tral Ukraine Chapter took part in otherInternational Electronics and Microwaveconferences in Germany, South Korea,Poland, and Russia. The Chapter provid-ed partial support to its members for con-ference participation. Two distinguishedlectures were given by members of Cen-tral Ukraine Chapter in May 2000, atuniversities in the USA. For other informa-tion, please contact Chapter Chair, Prof.Dr. Yuri Poplavko (E-Mail: [email protected]), or Vice-Chair, Dr. YuriProkopenko (E-Mail: [email protected]).

—Ninoslav Stojadinovic, Editor

ED/SSC Yugoslavia Chapterby Ivica Manic

The ED/SSC Yugoslavia Chapter helda regular meeting on the 23rd of Novem-ber in conjunction with a celebration of40th Anniversary of the Faculty of Elec-tronic Engineering, University of Nis. Dis-tinguished Lecturer presentations by Prof.Baldomir Zajc, Region 8 Conference

Coordinator, entitled “Rapid PrototypingTechnology in Digital Circuit Design Edu-cation”, and by Prof. Krishna Shenai,EDS AdCom member, entitled “Poweringthe Information Age” were given at themeeting. Furthermore, Prof. Ninoslav Sto-jadinovic, Distinguished Lecturer andChapter Chair, gave a joint promotionallecture entitled “IEEE: Why Students andEngineers Should Join?”. Finally, Prof.Krishna Shenai announced that our chap-ter had been selected as a recipient ofthe prestigious EDS Chapter of the YearAward, and gave a short affirmativespeech on chapter activities and accom-plishments over the past year. A receptionfor the Distinguished Lecturers hosted bythe Faculty Dean, Prof. Zivko Tosic, pre-ceded the dinner. The chapter meetingended by a cocktail party for a largeaudience from both industrial and acade-mia environments.

ED Sweden Chapterby Mikael Östling

The ED Sweden Chapter hosted itsmost successful meetings ever duringDecember last year. Together with theIEEE Sweden Section and Royal Instituteof Technology, we arranged two meet-ings with two of the Nobel Laureates inphysics 2000, Professor Zhores Alforevand Jack Kilby. On the 11th of Decem-ber, Jack Kilby gave a most interestingexpose of the work that paved the wayfor the invention of the integrated circuit.The seminar had a record high atten-dance of about 350 people. We countedmore than 50 IEEE members. On Decem-ber 13, Professor Alforev gave a seminarcovering the development of the institute,

the funding situation in Rus-sia, and of course theimportant experimentaldevelopment on the growthof heterojunction structuresfor laser applications. Thisseminar also attracted alarge crowd of close to200 people. Precedingboth seminars, the NobelLaureates were invited to aluncheon where universitypeople and people fromthe telecom industry hadthe opportunity for informaldiscussions. For more infor-mation, contact MikaelÖstling Professor, Head ofDepartment of Microelec-tronics and InformationTechnology Device Technol-

From the left: Mr. Vojkan Davidovic, ChapterTreasurer, Prof. Ninoslav Stojadinovic, ChapterChair, Prof. Baldomir Zajc, Region 8 ConferenceCoordinator, Prof. Krishna Shenai, EDS AdComMember, Prof. Zoran Prijic, Chapter Vice-Chair,and Mr. Ivica Manic, Chapter Secretary, at themeeting opening.

Jack Kilby looking into the future afterhis historical expose during his EDSweden seminar.

Professor Alferov during an excitedexplanation of his early heterojunctionexperiments.


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ogy Laboratory KTH, Royal Institute ofTechnology E229 SE-164 40 Kista, Swe-den. TEL: +46-8-7521402, FAX: +46-8-7527850, CELL: +46-70- 5658007Secretary Zandra Lundberg TEL: +46-8-7521348.

—Mikael Ostling, EditorED Israel Chapterby Gady Golan

Two meetings were held at the HolonInst. of Technology (HAIT) - Holon. OnNovember 15, 2000, the subject of themeeting was “Neural Computing of Effec-tive Properties in Random Composites,”with the guest lecturer being Prof. Abra-ham Beltzer from HAIT. Twenty people(mostly students and academic staff)at tended the meeting in Holon. OnDecember 20, 2000, the subject of themeeting was “Microwave Radiation Haz-ards to Biological Tissues” and the lectur-er was Dr. Gady Golan from HAIT. Fiftypeople (mostly students and some acade-mic staff) attended the meeting in Holon.The Chairman of both meetings was Dr.Gady Golan - ED Israel Chapter Secre-tary.

Report of the 12th InternationalConference on Microelectronics(ICM)by Ali Khakifirooz and Azad Shademan

The 12th International Conference onMicroelectronics (ICM 2000) was heldOctober 31–November 2, 2000, inTehran, Iran. This conference was orga-nized by the Electrical and ComputerEngineering Department, University ofTehran, and technically co-sponsored byIEEE EDS. For the first time in ICM’s histo-ry, most of the paper submissions wereconducted electronically and the confer-ence proceedings were also distributed inCD. The conference had more than 550attendees from 19 countries and 69 con-tributed papers accepted from more than120 submitted papers. Six invitedpapers were also presented,including Prof. Meindl of GeorgiaInst i tute of Technology on“Advanced Interconnect Technol-ogy”; Dr. Shahidi of IBM on“Challenges of CMOS Scaling atbelow 0.1micron” (presented byDr. Assaderaghi); Prof. Elmasryof the University of Waterloo on“Low Power VLSI CMOS CircuitDesign”; Dr. Assaderaghi of IBMon “DTMOS: Its Derivatives andVariations, and Their PotentialApplications”; and Prof. Nathan

of the University of Waterloo on “ThinFilm Imaging Technology on Glass andPlastic”. While we regret that Prof.Mertens could not attend the conferenceto present his invited talk on “Research inthe Field of System-in-a-Package at theInteruniversity Microelectronics Center(IMEC)”, this talk was replaced by Dr.Mohajerzadeh’s lecture on “Research onMicrosensor Technology at the Thin FilmLaboratory of the University of Tehran”.Reporting the rapid progress of the labo-ratory since its establishment in 1997, Dr.Mohajerzadeh emphasized that the mainfactor in research is outstanding studentsand novel ideas and not necessarilysophisticated facilities.

One of the main features of this year’sconference was the spectacular participa-tion of the students, which gave a viva-cious spirit to this academic event. Morethan 300 students attended, with 30 ofthem as authors or co-authors. Also agroup of 35 members of the University ofTehran IEEE Student Branch contributed inorganizing the conference. During the con-ference, a great deal of effort was devotedto promote IEEE and EDS membership.Having proposed to establish the EDS stu-dent chapter at the University of Tehran,this idea was strongly encouraged by Prof.Nathan. We are looking forward to hav-ing more participation in EDS activities inthe near future.

On October 30, a day before the con-ference, Prof. Meindl was kind enough tovisit our department and deliver a tutorialon “XXI Century Opportunities for GigaScale Integration”. The tutorial addressedfundamental, material, physical, circuit,and system limitations based on theoreticaland practical aspects of the issue.

—Gady Golan, Editor

ED Spain Chapterby Ramon Alcubilla

The CDE 01 (Electron Device Confer-

ence) was held in Granada on February15-16. It was the third edition of this con-ference with the important participation ofresearchers from universities, industries,and research centers. For more informa-tion, contact Prof. Ramon Alcubilla, TEL:34-934016757 or FAX: 34-934016756.

—Christian Zardini, Editor

Asia & Pacific (Region 10)ED/LEO Australia Chapterby Chennupati Jagadish

• Professor Kent Choquette from the Uni-versity of Illinois at Urbana-Cham-paign, LEOS Distinguished Lecturer,visited the Chapter in December2000, and gave a seminar on “Verti-cal Cavity Lasers”.

• Assoc. Professor Fouad Karouta fromEindhoven University of Technology,EDS Distinguished Lecturer, visited theChapter in December 2000, and gavea seminar on “Reactive Ion Etching ofGallium Nitride”.

• Prof. Vijay Arora from Wilkes Universi-ty, Nanyang Technological University,EDS Distinguished Lecturer, visited theChapter in November 2000, andgave a seminar on “High Field Effectsin Nanostructures”.

The Chapter has been actively involvedand technically co-sponsored the 2000Conference on Optoelectronic and Micro-electronic Materials and Devices (COM-MAD) held in LaTrobe University,Melbourne, during December 6-8, 2000.The Conference attracted 150 participantsfrom more than 20 countries and the tech-nical program contained 20 invited talks,40 contributed oral papers and more than100 poster papers.

For further information about chapteractivities, please contact the Chapter

Chair: Professor ChennupatiJagadish, Department of ElectronicMaterials Engineering, ResearchSchool of Physical Sciences andEngineering, Australian NationalUniversity, Canberra, ACT 0200.TEL: 61-2-6125-0363, FAX: 61-2-6125-0511, E-Mail:chennupati.jagadish@ anu.edu.au.

AP/ED Bombay Chapterby Juzer Vasi

The most important event of thisquarter was the seminar “VLSI: Sys-tems, Design and Technology” held

Prof. Nathan among the student members of ICM 2000 OrganizingCommittee.


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during December 9–11, 2000. This wasco-sponsored by the AP/ED BombayChapter. The seminar attracted about 350participants from the microelectronics andVLSI industry in India, as well asresearchers and students from academicand R&D institutions. There was a tutorialshort course on “DSP Architectures forVLSI” presented by Dr. Mahesh Mehen-dale of Texas Instruments, India Ltd. Theseminar consisted of a total of 18 invitedpapers and 20 contributed papers. One ofthe highlights of the technical sessions wasthe paper by the EDS Distinguished Lectur-er, Dr. Xing Zhou of Nanyang Technologi-cal University (Singapore), on“Mixed-signal multi-level circuit simulation:An implicit mixed-mode solution”. An IEEEbooth was set up during the seminar tohighlight the advantages of IEEE member-ship which attracted a great deal of atten-tion.

Dr. Xing Zhou also gave another DL talkon “MOSFET compact I-V modeling for

deep-submicron technology development”on December 9, 2000, to an audience ofIEEE members and students.

In addition to the major seminar inDecember, the following lectures werearranged under the auspices of the AP/EDBombay Section:

• October 17, 2000: A talk by Dr. PiyasSamanta, Jadavpur University, Calcut-ta, on “Fowler-Nordheim stressing ofMOS capacitors in accumulation andinversion.”

• October 20, 2000: A talk by Dr.Tapas Datta, Sr. Design Manager,Intel Bangalore, on “Front End DesignMethodology for multi-million gateASICs.”

• October 30, 2000: A talk by Dr. K. L.Narasimhan, Tata Institute of Funda-mental Research, Bombay, on “Organ-ic Semiconductors.”

• November 6, 2000: A talk by Prof. B.P. Sinha, Memorial University of New-foundland, Canada, on “Electromag-netic scattering by coated conductingprolate spheroids.”

• December 19, 2000: A talk by Prof. J.N. Dahiya, Southeast Missouri StateUniversity, USA, on “Microwave dielec-tric relaxation of selected materialsusing a computerized resonant cavity.”

All these talks attracted large audiencesranging from 50 to 150, including manystudents.

For further information, please contactJuzer Vasi, Electrical Engineering Depart-ment, I IT Bombay, Powai, Mumbai4000076 India. FAX: +91-22-5723480,E-Mail: [email protected].

ED/MTT India Chapterby K.S. Chari

Three invited lectures were delivered inDecember. The first one on “R&D Profile ofNokia Research Centre in Germany” wasdelivered by Dr. Dirk Friebel of Nokia atthe Indian Institute of Technology, Delhi, onDecember 6, 2000. The lecture highlight-ed the functionality of real-time systems,internet telephony and data transmission,embedded systems, and object orientedprogramming for devices for better utiliza-tion of bandwidth. The talk covered thepresent 0.18 micron technology productsand the probable quantum jump to 0.08micron technology for high speed commu-nication etc. It was attended by 50 partici-pants from the R&D groups and students.Prof. Bharathi Bhat and Dr. B.S. Panwarcoordinated the interactions at IIT, Delhi.The second talk entitled, “Fiber OpticalSensors for Disaster Monitoring,” wasdelivered by Prof. Brian Culshaw of Strath-clyde University on December 15, 2000.The basic techniques of fiber sensors for avariety of applications such as gas sens-ing, hydrocarbon spillage, and floodingwere illustrated. The event was organizedby the Chapter in association with CRRIand about 80 scientists attended the talk.After the talk, Prof. Culshaw had a sepa-rate session with the Chapter Chair, Dr.Rao, Mr. Jaspreet Singh of CRRI to discussissues related to early warning system forlandslides and earthquakes detection usingthe hydrogel based optical sensors. Thethird lecture was delivered by Prof. BruceEisenstein on “New Educational Para-digms: Role of IEEE Societies in Educationand Lifelong learning” at IIT Delhi onDecember 19, 2000. Dr. Eisensteintouched on the various educational pro-grams, the innovative services and prod-ucts offered from IEEE, the initiatives fromIEEE to encourage graduates to obtainknowledge of contemporary issues, andalso the various life long educational pro-grams. The talk was followed by an inter-active session where issues such asspeeding up of the IEEE publication reviewprocess, better methodology of review,IEEE life membership, freedom to membersfor on-line access to other IEEE society pub-lications, increasing IEEE on-line magazinesupport, etc., were discussed. The meetingwas attended by the Chapter Chair, Mr.Asthana (IEEE Delhi Section Chair), Prof.H. M. Gupta, Prof. S. S. Jamuar and Dr. B.S. Panwar. The event was attended byabout 40 participants.

A follow-up meeting on the nationalworkshop on “Broadband Photonics” washeld at NCRA Pune on November 13,2000. It was decided at the meeting to

EDS Distinguished Lecturer Xing Zhou and BombayChapter Chair Juzer Vasi at the IEEE booth duringthe seminar “VLSI: Systems, Design andTechnology” held in Bombay.

Attendees at workshop on broadband photonic links, NCRA-TIFR, Pune.


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make the event a regular fea-ture to serve as a forum forthe photonics/opto-electroniccommunity.

A national Workshop on“Microwave and MillimeterWave Active Devices andTheir Application” was co-sponsored by the Chapterand was held at the CentralElectronics & EngineeringResearch Institute (CEERI) onDecember 15–16, 2000. Itconsisted of presentations by experts onareas of high power microwave tubes,semiconductor devices, MEMS and theirlatest developments and trends. The work-shop was attended by 100 participantsand was a very successful forum for dis-cussing the trends in microwave and mil-limeter wave devices and applications.Dr. S. Ahmad, Shri S. N. Joshi fromCEERI, Dr. Govind from Ministry of Infor-mation Technology took a leading role inorganizing the event.

Under the IEEE STAR program, theChapter Chair had diversified theseefforts to different regions in the country.For the current year, schools in AndhraPradesh (Eluru) and Delhi were identifiedto extend the efforts currently underwayat Kurukshetra.

Consequent to the Chapter completing25 years of its existence, a silver jubileecelebration is underway and likely to beinaugurated by the IEEE President inDecember 2000. A series of initiativesconcerning the practices and proceduresof chapter administration were proposed.As part of these initiatives, the ChapterCommittee meeting was held outside Del-hi at Kurukshetra University, to provideopportunities for interaction with chaptermembers at Kurukshetra. Several issues,such as rotation of chapter committee

meetings, all-India election process forchapter positions, organizing more work-shops/short courses/seminars, nationalscience and technology exhibitions/faresfor student etc. were discussed. In view ofthe need to meet the request of regionalmembers, it was decided that next year’schapter committee meeting will be held inother regions in the country.

For further information, please contactDr. K. S. Chari, Director, Micro Electron-ics & Photonics Division, Department ofElectronics, C.G.O. Complex, New Del-hi, India, TEL: 91-11-436 1464; FAX: 91-11-436 3082; E-Mail: [email protected].

2000 International Conference onSemiconductor Electronics(ICSE2000)

ED Malaysia has successfully orga-nized the 2000 IEEE International Confer-ence on Semiconductor Electronics(ICSE2000) on Nov 13-15, 2000 atGuoman Port Dickson, in the state ofNegeri Sembilan. The conference wastechnically co-sponsored by the ElectronDevices Society and financially spon-sored by MIMOS Semiconductor(M) Sdn.Bhd, ON Semiconductor(M) Sdn. Bhdand State Government of Negeri Sembi-lan. This is the fourth ICSE organized by

the Electron DevicesChapter of IEEE MalaysiaSection every two yearssince 1996. The scope ofthe conference covers allaspects of the semicon-ductor technology, frommaterials issues anddevice fabrication, pho-tonics technology, ICdesign (RF and VLSI) andtesting, manufacturing,and system applications.The participants repre-

sented ten countries: Malaysia; Singa-pore; Taiwan; Indonesia; USA; UK;Australia; France; Thailand; and India. Atotal of 52 papers were presented withtwo of them being invited papers. Prof.Hiroshi Iwai, IEEE EDS Regions/ChaptersChair/Distinguished Lecturer, spoke onProblems and solutions for downsizingCMOS below 0.1 mm and Prof C.I.M.Beenakker from Delft Institute of Micro-electronics and Submicrontechnology,Netherlands spoke on New Develop-ments in Silicon Technology. All paperswere published in the ProceedingsICSE2000 which will distributed by IEEEunder the Book Broker Program.

REL/CPMT/ED Singapore Chapterby Y. C. Ng

The Chapter successfully organized theThird Electronic Packaging TechnologyConference (EPTC 2000) on December 5-7, 2000, in Sheraton Towers. The atten-dees totaled 270, from 18 countries. TheChapter also played host for the Region10 CPMT Society Chapter Chairs alongwith the EPTC week. Overseas delega-tions (that includes the Board of Gover-nors) attended this Region 10 CPMTChapters Meeting in Singapore. TheED/CPMT/REL Chapter for the year 2001will be headed by Dr. M. K. Radhakrish-nan as Chairman and Dr. S. H. Ong asVice-Chairman.

For further information, please contactDr. S. H. Ong, TEL: 65-5595-452, E-Mail:soon.huat.ong@ nsc.com.

—W. K. Choi, Editor

Report on the First InternationalWorkshop on Junction Technology(IWJT2000)by Hiroshi Iwai

The First International Workshop onJunction Technology (IWJT2000) washeld at the Makuhari Prince Hotel,Makuhari, Chiba, Japan, on December6. The conference is sponsored/co-spon-

Lecture by IEEE President to students and faculty of IIT, Delhi

Singapore Chapter EPTC 2000.


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sored by the Japan Society of AppliedPhysics and EDS and several other orga-nizations. This workshop was founded inorder to offer an opportunity to engineersand scientists participating in junctiontechnologies to meet together, presenttheir works, and exchange their ideas forpossible collaborations. Junction technolo-gy specialists were invited from aroundthe world and more than 100 researchersattended the workshop. Prof. M. Koyana-gi of Tohoku Univ, gave a plenary talkregarding the requirement of ultra-shallowjunction technologies from a device pointof view. Then, Dr. L. Larson of Sematechdelivered a perspective on ultra-shallowjunction technology from the viewpoint ofITRS ‘99. The workshop was concludedby a panel discussion moderated by H.Iwai of Tokyo Inst. of Tech., regardingnew junction technologies for sub-100devices. IWJT 2001 will be held inTokyo, Japan, on November 29 and 30,2001. For further information, pleaseaccess http://home.hiroshima-u.ac.jp/iwjt or contact Dr. B. Mizuno [email protected].

Foundation of Kansai Chapterby Hiroshi Nozawa and Hiroshi Iwai

The ED Kansai Chapter has been new-ly founded under the IEEE Kansai Section,Japan. Kansai is a geographical region inJapan, including Kyoto, Osaka, Kobe,and Nara. Kansai had been the politicaland cultural center of Japan for a verylong period. In fact, old Japanese capitolshad been located in this region for morethan 15 hundred years until only 130years ago. The number of EDS membersin the Kansai Chapter is about 170. Now,the Japan Chapter has been divided intotwo chapters, the Japan Chapter underthe Japan Council and the Kansai Chapterunder the Kansai Section. The JapanChapter covers the 7 remaining sectionareas under the Japan Council, including

Tokyo, Sendai, Hiroshima, Fukuoka, andso on. The opening ceremony was held atthe Renaissance Building in front of theKyoto station on December 25. HiroshiNozawa, Chair, Masaru Kazumura, ViceChair, Yasushi Yamamoto, Secretary, Tat-suo Otsuki, Treasurer, and other key mem-bers of the chapter attended the ceremonyto discuss its new activity. The EDSRegions/Chapters Committee Chair,Hiroshi Iwai, and Japan Chapter Chair,Kazuo Tsubouchi, were invited to givecongratulatory speeches on behalf of theEDS and the Japan Chapter, respectively.

—Hisayo Momose, Editor

ED Beijing Chapterby Jin-Jun Feng

The following are the activities of theED Beijing Chapter for last three months:

• On July 30,2000, Dr. Dieter M. Gru-en (from Argonne National Lab,USA), visited the ED Beijing Chapter,and gave a lecture titled “Application

of diamond film in vacuum microelec-tronics and MEMS”. About twentyresearchers from the Beijing VacuumElectronics Research Institute and theBeijing Artificial Crystal Instituteattended the meeting.

• From August 1 to 4, the ED BeijingChapter held its working meeting inWeiHai City of ShanDong Province.Chapter Chair, Prof. Fu-Jiang Liao,Chapter Vice-Chair, Prof. Shan-HongXia, Chapter Treasurer, Dr. Jin-JunFeng, and Secretary, Qing-An Huang,attended the meeting as well as theSouthwest Area Liaison and NorthwestLiaison. In this meeting, we discussedthe present status of the Chapter, pro-motion of a new Student Branch andmembers, and also the academicactivities in the future.

• On September 8, 2000, Dr. Zhou Xing(EDS DL) from Nanyang TechnologicalUniversity of Singapore, visited the EDBeijing Chapter and talked to ourmembers. His speech title was “Subpi-cosecond Electrical Pulse Generationby Nonuniform Gap Illumination”.

2001 International Symposium onVLSI Technology, Systems, andApplications (VLSI-TSA)by Ran Yan, J-M Shyu, and Tak Ning

The 2001 International Symposium onVLSI Technology, Systems, and Applica-tions will be held in April, during thebeautiful Spring season in Taiwan. Theconference location, Hsinchu, is the cen-ter of advanced integrated circuit manu-facturing in Taiwan. The purpose of the

IWJT during session.

Standing (left to right) Tatsuo Otsuki, Yasushi Yamamoto, Akira Suzuki, Kenji Taniguchi, Masaru Kazumura,Masaaki Kuzuhara, and Takashi Nakamura. Sitting (left to right): Kazuo Tsubouchi, Hiroshi Nozawa, andHiroshi Iwai.


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Symposium is to bring together scientistsand engineers actively engaged inresearch and development on VLSI tech-nology, systems, and applications fromall over the world to discuss the currentprogress in this field with the subjectexperts from Taiwan’s local industry.

This year, the conference has attractedmore than 110 excellent contributedpapers from all over the world, represent-ing original works on the latest advancesin the area of VLSI technology, circuits,and applications. In addition, the confer-ence has invited 15 world experts to pre-sent reviews on the state of the art in their

respective area of expertise. Furthermore,the Symposium is very proud to have threeplenary presentations by distinguishedspeakers from around the world, including“Systems on a Chip from a System’s Per-spective” by Gene Frantz (Senior Fellow,Texas Instruments, USA), “Future is inWireless” by Heikki Huomo (Vice Presi-dent, Research and Technology Access,Nokia, Finland), and “Joint Activity forSemiconductor R&D and Role of Semicon-ductor Technology Academic ResearchCenter (STARC)” by Toyoki Takemoto(Executive Vice President, STARC, Japan).

The conference site this year is theLakeshore Hotel in Hsinchu(see attached photo). It hasrelaxing and elegant surround-ings, in addition to being closeto the science park of Hsinchu,where most of Taiwan’s ICmanufacturing is located.Please visit our Symposiumweb site at http://www.erso.itri.org.tw/ VLSI-TSA.

The 2001 VLSI-TSA, spon-sored by the Industrial Tech-nology Research Institute of

Taiwan, ROC, will take place in Hsinchu,Taiwan, April 18-20, 2001. Technical co-sponsors include the Chinese Institute ofEngineers, ROC, Taiwan SemiconductorIndustry Association, IEEE Electron DevicesSociety, IEEE Solid-State Circuits Society,IEEE Circuits and Systems Society, IEEETaipei Section, and IEEE Electron DevicesSociety Taipei Chapter.

Please contact the Symposium secretari-at for further details: Ms. Annie Lee, Secre-tariat of 2001 VLSI-TSA; A5300ERSO/ITRI; BLD. 11, Sec. 4, 195-4,Chung-Hsing Road; Chutung, Hsinchu, Tai-wan 31015, R. O. C.; TEL: +886-3-5913478; FAX: +886-3-5820257;E-Mail: [email protected].

ED Taipei Chapter offers IEEE EDSEducational Series for AcademicResearchers and IndustrialEngineers in Taiwanby Steve Chung

Instructed by Prof. Jack C. Lee, Univer-sity of Texas, a short course on Dielectricswill be offered on April 12 in Santa Claraand April 26 in Taiwan. Part of the Van-guard Series, the course offered in Taiwanwill be the first outside the U.S. It will beheld at the Hsinchu Science-Based Indus-trial Park, Hsinchu, Taiwan. For moreinformation, contact the EDS Short CourseManager, Emily Sopensky, The Iris Com-pany, 923 East 39th Street, Austin, Texas,TEL: +1 512 452 2448, FAX; +1 512452 8950, Email: [email protected],or Prof. Steve S. Chung, Department ofElectronic Engineering, National ChiaoTung University, Taiwan. TEL: 886-3-5731830, FAX: 886-3-572 4361, E-Mail:[email protected].

—Tahui Wang, Editor

Dr. Dieter M. Gruen lecturing at ED Beijing Chapter.Dr. Zhou Xing (EDS Distinguished Lecturer) lecturingat ED Beijing Chapter.

VLSI-TSA.

articles, and educational activities, but novote was taken pending a financial assess-ment of the request.

The Compound Semiconductor and ICSTechnical Committee (TC) has joined withthe Opto-Electronic Devices TC in severalprojects and meetings. Herb Bennett, chair-man, listed several conference-relatedsatellite workshops on SiGe technologyand Compound Semiconductor Physicsgiven within the last year. Both groups willpromote new areas embracing SiGe tech-nology for wireless applications, magnetic

semiconductors, InP & GaAlAs HEMTs &HBTs, new photonic materials, nitride-based devices, and larger wafers. RajSingh’s Semiconductor Manufacturing TChas worked on conferences, journal spe-cial issues, 300mm manufacturing, interac-tions with Sematech (and relatedinternational groups), and the role offoundries in 2000. Philip Wong has gottenhis VLSI Technology TC to sponsor an"Emerging Technologies" panel discussionat IEDM 2000, and a special issue of T-EDon computational electronics.

In closing the meeting, all current EDSofficers were re-elected to their positions,four AdCom members were re-elected for asecond term (Ilesanmi Adesida, Arlene A.Santos, S.C. Sun and Paul K. L. Yu), andthree new AdCom members, H. S. PhilipWong, Leda Lunardi, and Toshiro Hiramotowere elected. The next meeting of AdComwill be in Singapore on July 8, 2001.

John K. LowellPDS Solutions

Richardson, TX

December AdComcontinued from page 7

39 EDS Members Elected to the IEEE Grade of FellowEffective 1 January 2001

Richard Keith Ahrenkiel: For contributions to measurement of minority carrier lifetimes in semiconductor materialsBarry E. Burke: For contributions to the technology development of charge-coupled devices for imaging and signal processingSethumadhavan Chandrasekhar: For contributions to the design and development of 1.55 um opto-electronic integrated cir-cuits for wide-spectrum application in optical communicationsIh-Chin Chen: For leadership in the development of advanced CMOS technologiesJohn D. Cressler: For contributions to the understanding and optimization of silicon and silicon-germanium bipolar transistorsSorin Cristoloveanu: For contributions to Silicon-on-Insulator device physics, technology, and characterizationRik W.A.A. de Doncker: For contributions to the development of high-power resonant soft-switching converters and high-perfor-mance digital control of induction machinesSang H. Dhong: For contribution to high speed processor and memory chip designSamir M. El-Ghazaly: For contributions to the analysis and simulations of microwave devices and circuitsArthur Charles: For contributions to semiconductor microstructure fabricationAditya Kumar Gupta: For contributions to the advancement of microwave monolithic integrated circuit technology and leadershipin the development of manufacturable processesYoshiaki Daimon Hagiwara: For pioneering work on, and development of, solid-state imagersTakeo Hattori: For his contributions to the studies on the formation and the characterization of ultrathin gate oxides for ULSI devicesJames N. Hollenhorst: For contributions to ultra-high performance avalanche photodiodes.Wei Hwang: For contributions to high density cell technology and high speed Dynamic Random Access Memory design.Hiroshi Ishiwara: For contributions to Si-based heterostructure devices and ferroelectric memoriesDieter Stefan Jager: For contributions to the development of device concepts in microwaves and photonicsRobert Forrest Kwasnick: For contributions to the development of amorphous silicon flat panel x-ray imager technologyKei May Lau: For contributions to III-V compound semiconductor heterostructure materials and devicesChin Chung Lee: For pioneering research in fluxless bonding technology and contributions to thermal design tools for electronicdevices and packagesBaruch Levush: For leadership in the development of theoretical and computational models of free electron radiation sourcesBernard S. Meyerson: For the invention of ultra high vacuum chemical vapor deposition and its application to low temperatureepitaxy of SiGe for the fabrication of heterojunction bipolar integrated circuits for telecommunicationsAkihiko Morino: For contributions to the development of System-on-a-Chip for multimedia applicationsKenji Nishi: For contributions to semiconductor process and device modeling and the development of software for their simulationJon Harris Orloff: For contributions to Focussed Ion Beam TechnologyStephen John Pearton: For development of advanced semiconductor processing techniques and their application to compoundsemiconductor devicesJohn Xavier Przybysz: For contributions in the development and application of Josephson digital circuits to electronic systems,especially radars, communication satellites and data switching networksHans-Martin Rein: For contributions to the design of high-speed silicon and silicon/germanium bipolar circuits, especially asapplied to fiber-optic systemsEdward Anthony Rezek: For contributions to GaAs and InP monolithic microwave integrated circuits and optoelectronic devicesArvind Kumar Sharma: For contributions to active device and passive component modeling, and design of high power monolith-ic millimeter-wave integrated circuitsKrishna Shenai: For contributions to the understanding, development and application of power semiconductor devices and circuitsRitu Shrivastava: For contributions to high performance CMOS memory technology and product developmentJames C. Sturm: For contributions to novel silicon-based semiconductor devices, large-area electronics, and engineering educationPeter Vettiger: For contributions to, and leadership in, the development of microfabrication processes for electronic, optoelectron-ic, and microelectrocomechanical devices, circuits, and systemsYang Yuan Wang: For leadership in China's semiconductor research and educationIsamu Washizuka: For contributions to the technology and applications of liquid crystal displaysAndrew B. Wittkower: For contributions and leadership in the development and advancement of ion implantation techniques,equipment and companiesHon-Sum Philip Wong: For contributions to solid-state image sensors and nanoscale CMOS devicesMax Neil Yoder: For leadership of government sponsored development of microwave integrated circuits

The Nominations of the Following Individuals Were Evaluated by EDS But They Are Not Current Members of EDSKarl W. Boer: For contributions to research, development, and commercialization of thin film solar cellsSatoshi Hiyamizu: For contributions to the realization of the first high electron mobility transistor (HEMT)


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April 2 - 4, 2001, @ IEEE International Vacu-um Electronics Conference Location: GrandHotel Huis ter Duin, Noordwijk, The NetherlandsContact: Marco Guglielmi, P.O. Box 299, Noord-wijk, The Netherlands 2200AG Tel: +011 31 71565 3493 Fax: 011 31 71 565 4596 E-Mail:[email protected] Deadline: 11/10/00www: http://www.estec.esa.int/CONFANNOUN/IVEC2001/index.html

April 12, 2001, * IEEE Independent ShortCourse on Ultra-Thin Gate Oxide andHigh-K Dielectrics Location: Marriott Hotel,Santa Clara, CA, USA Contact: Emily Sopensky,923 East 39th Street, Austin, Texas, USA 78751Tel: +1 512 451 4333 Fax: +1 512 452 8950E-Mail: [email protected] Deadline: NotAvailable www: http://www.ieee.org/eds/short-courses

April 18 - 20, 2001, T International Sympo-sium on VLSI Technology, Systems andApplications Location: Taipei International Con-vention Center, Taipei, Taiwan Contact: DanielChen, B300, No. 195-4, Sec. 4, Chang Hsin Rd.,Chutang, Hsinchu, Taiwan 310 Tel: +886 35417232 Fax: +886 3 582 0257 E-Mail:[email protected] Deadline: 10/20/00www: http://www.erso.itri.org.tw/VLSI-TSA/

April 23 - 24, 2001, * IEEE/SEMI AdvancedSemiconductor Manufacturing Conferenceand Workshop Location: International Con-gress Center Munich, Munich, Germany Contact:Margaret Kindling, SEMI, 805 15th St. NW - Suite810, Washington, D.C., USA 20005 Tel: +1202 289 0440 Fax: +1 202 289 0441 E-Mail:[email protected] Deadline: 9/11/00 www:http://www.semi.org/web/wevents.nsf/url/E01CFPA

April 26, 2001, * IEEE Independent ShortCourse on Ultra-Thin Gate Oxide andHigh-K Dielectrics Location: National ChiaoTung University, Hsinchu, Taiwan Contact: EmilySopensky, 923 East 39th Street, Austin, Texas,USA 78751 Tel: +1 512 451 4333 Fax: +1 512452 8950 E-Mail: [email protected] Dead-line: Not Available www: http://www.ieee.org/eds/shortcourses

April 30 - May 3, 2001, * IEEE InternationalReliability Physics Symposium Location:

Wyndham Palace Resort and Spa, Orlando, FL,USA Contact: Anthony Oates, Agere Systems,9333 S. John Young Parkway, Orlando, FL, USA32819 Tel: +1 407 371 7536 Fax: +1 407 3717639 E-Mail: [email protected] Deadline:9/15/00 www: http://www.irps.org/

May 6 - 9, 2001, T IEEE Custom IntegratedCircuits Conference Location: Town and Coun-try Hotel, San Diego, CA, USA Contact: MelissaWiderkehr, Widerkehr & Associates, 101 Lakefor-est Blvd., Suite 400B, Gaithersburg, MD, USA20877 Tel: +1 301 527 0900 ext. 101 Fax: +1301 527 0994 E-Mail: [email protected]: 11/29/00 www: http://www.ieee-cicc.org

May 13 - 15, 2001, T International Sympo-sium on Plasma Process Induced DamageLocation: Doubletree Hotel/Monterey ConferenceCenter, Monterey, CA, USA Contact: DellaMiller, AVS West, 1265 El Camino Real, Suite109, Santa Clara, CA, USA 95050 Tel: +1 408246 3600 Fax: +1 408 246 7700 E-Mail: [email protected] Deadline: 2/2/01 www:http://www.p2id.org

May 14 - 18, 2001, @ IEEE InternationalConference on Indium Phosphide andRelated Materials Location: Nara New PublicHall 101, Kasugano-cho, Nara, Japan Contact:Hajime Asahi, Osaka University, The Inst. of Scientific & Indus. Research, 8-1 Mihogaoka,Ibaraki, Osaka, Japan 567-0047 Tel: +81 66879 8407 Fax: +81 6 6879 8509 E-Mail:[email protected] Deadline:11/28/00 www: www.knt-ec.com/IPRM01

May 20 - 22, 2001, T IEEE Radio FrequencyIntegrated Circuits Symposium Location:Phoenix Civic Plaza, Phoenix, AZ, USA Contact:David Lovelace, Gain Technology, 3930 East RayRoad, Suite 200, Phoenix, AZ, USA 85044 Tel:+1 480 759 0200 ext. 213 Fax: +1 480 7041500 E-Mail: [email protected] Deadline:11/27/00 www: http://www.ims2001.org/rfic

May 27 - 30, 2001, T International Semicon-ductor Technology Conference Location:Shanghai Pudong Shanfri-La Hotel, Shanghai, Chi-na Contact: Brian Rounsavill, The ElectrochemicalSociety, 65 South Main Street, Pennington, NJ,

USA 08534-2839 Tel: +1 609 737 1902 ext.108 Fax: +1 609 737 2743 E-Mail: [email protected] Deadline: 11/1/00 www: http:/www.electrochem.org/ecstasi/

May 29 - June 1, 2001, # International Con-ference on Electron, Ion and PhotonBeam Technology and NanofabricationLocation: JW Marriott Hotel, Washington, D.C.,USA Contact: Doug Resnick, Motorola, 77 SouthRiver Parkway MD: ML 26, Tempe, AZ, USA85284 Tel: +1 480 755 5315 Fax: +1 7555389 E-Mail: [email protected],[email protected] Deadline: Not Avail-able www: http://www.eipbn.org

June 3 - 6, 2001, * IEEE International Inter-connect Technology Conference Location:Hyatt Regency San Francisco Airport Hotel,Burlingame, CA, USA Contact: Wendy Walker,Widerkehr & Associates, 101 Lakeforest Blvd.,Suite 400B, Gaithersburg, MD, USA 20877 Tel:+1 301 527 0900 ext. 104 Fax: +1 301 5270994 E-Mail: [email protected] Deadline:1/19/01 www: www.ieee.org/conference/iitc

June 4 - 8, 2001, @ IEEE International Sym-posium on Power Semiconductor Devices& Integrated Circuits Location: Osaka Interna-tional Convention Center, Osaka, Japan Contact:Toshiaki Yachi, NTT Telecommunications EnergyLaboratories, Room 1-4W, 3-9-11, Midori-cho,Musashino-shi, Tokyo, Japan 180-8585 Tel: +81422 59 3129 Fax: +81 422 60 7386 E-Mail:[email protected] Deadline: 10/15/00www: http://www.rdd.kepco.co.jp/ispsd

June 5 - 8, 2001, T European Conference onHigh Temperature Electronics Location:Grand Hotel, Oslo, Norway Contact: Ovidiu Ver-mesan, SINTEF, Forskningsvn. 1, PO Box 124 Blind-ern, Oslo, Norway N-0314 Tel: +47 22 06 75 06Fax: +47 22 06 73 50 E-Mail: ovidiu. [email protected] Deadline: 1/15/01www: www.oslo.sintef.no/hiten01

June 7 - 9, 2001, * IEEE Workshop onCharge-Coupled Devices & AdvancedImage Sensors Location: Cal-Neva Resort,Crystal Bay, Nevada, USA Contact: Eric Fossum,Photobit Corp., 135 N. Los Robles Ave., Pasade-na, CA, USA 91101 Tel: +1 626 683 2200

EDS Meetings Calendar(As of 26 February 2001)

The complete EDS Calendar can be found at our web site:http://www.ieee.org/organizations/society/eds/EDSCal.html. Please visit!

* = Sponsorship or Co-Sponsorship Support @ = Alternates support between ‘Sponsorship/Co-Sponsorship’ and ‘Technical Co-Sponsorship’T = Technical Co-Sponsorship Support # = Cooperation Support


27

Fax: +1 626 683 2220 E-Mail: [email protected] Deadline: Not Available www:http://www.calnevaresort.com

June 10, 2001, @ IEEE International Work-shop on Statistical Methodology for VLSIDesign and Fabrication Location: Righa RoyalHotel Kyoto, Kyoto, Japan Contact: KenjiMaeguchi, Toshiba Corporation, SemiconductorCo. (Yokohama Complex), Memory LSI R&D Ctr.,Memory Division, 8, Shinsugita-cho, Isogo-ku,Yokohama, Japan 235-8522 Tel: +81 45 7703601 Fax: +81 770 3573 E-Mail:[email protected] Deadline: 1/26/01www: http://www.ic.nec.co.jp/iwsm2001

June 10 - 11, 2001, @ IEEE Silicon Nanoelec-tronics Workshop Location: Rihga Royal Hotel,Kyoto, Japan Contact: Toshiro Hiramoto, Universityof Tokyo, Institute of Industrial Science, 7-22-1 Rop-pongi, Minato-ku, Tokyo, Japan 106-8558 Tel:+81 3 3402 0873 Fax: +81 3402 0873 E-Mail:[email protected] Deadline: NotAvailable www: http://www.eas.asu.edu/~nano/SNW/SNW.htm

June 10 - 14, 2001, @ IEEE TRANSDUCERS -International Conference on Solid-StateSensors and Actuators Location: GasteigCultural, Educational & Conference Cntr, Munich,Germany Contact: Conference Secretariat,CSM, Industriestr.35 -, Grobenzell/Munich, Ger-many D-82194 Tel: +49 8142 570183 Fax:+49 8142 54735 E-Mail: t [email protected] Deadline: 12/1/00 www:http://www.transducers01.de

June 11 - 15, 2001, # International Photo-voltaic Science & Engineering ConferenceLocation: Lotte Hotel, Cheju Island, Korea Contact:Jinsoo Song, Korea Institute of Energy Research,71-2 Jang-dong, Yusong-gu, Taejon, Korea 304-343 Tel: +82 42 860 3738 Fax: +82 42 8603739 E-Mail: [email protected] Deadline:12/31/00 www: http://www.solarpv.or.kr/pvsec-12

June 12 - 14, 2001, @ IEEE Symposium onVLSI Technology Location: Rhiga Royal Hotel,Kyoto, Japan Contact: Phyllis Mahoney,Widerkehr & Associates, 101 Lakeforest Blvd.,Suite 400 B, Gaithersburg, MD, USA 20877 Tel:+1 301 527 0900 ext. 103 Fax: +1 301 5270994 E-Mail: [email protected] Deadline:1/10/01 www: http://www.vlsisymposium.org

June 12 - 15, 2001, T International Sympo-sium on Physics & Engineering of Mil-limeter & Sub-Millimeter Waves Location:

Kharkov State University, Kharkov, Ukraine Contact: Alexey Kostenko, IRE NASU, Ul.Proskury 12, Kharkov, Ukraine 310085 Tel: NotAvailable Fax: +380 572 441105 E-Mail:[email protected] Deadline: Not Avail-able www: http://www.ire.kharkov.ua

June 14 - 16, 2001, @ IEEE InternationalSymposium on VLSI Circuits Location: RighaRoyal Hotel, Kyoto, Japan Contact: PhyllisMahoney, Widerkehr & Associates, 101 Lakefor-est Blvd., Suite 400 B, Gaithersburg, MD, USA20877 Tel: +1 301 527 0900 ext. 103 Fax:+1 301 527 0994 E-Mail: phyl l [email protected] Deadline: 1/10/01 www:http://www.vlsisymposium.org

June 17 - 20, 2001, * IEEE University/Gov-ernment/Industry Microelectronics Sym-posium Location: Viginia CommonwealthUniversity, Richmond, VA, USA Contact: RobertPearson, Virginia Commonwealth University, 601West Main St., PO Box 843072, Richmond, VA,USA 23284-3072 Tel: +1 804 827 7627 Fax:+1 804 828 4269 E-Mail: [email protected]: 2/2/01 www: http://www.vcu.edu/egrweb/ugim2001

June 20 - 23, 2001, T Conference on Insu-lating Films on Semiconductors Location:University of Udine, Udine, Italy Contact: EnricoSangiorgi, DIEGM, University of Udine, Via delleScienze 203, Udine, Italy 33100 Tel: +39 0432558284 Fax: +39 0432 558251 E-Mail: [email protected] Deadline: Not Availablewww: http://www.uniud.it/infos2001

June 25 - 27, 2001, T Device Research Con-ference Location: University of Notre Dame,Notre Dame, IN, USA Contact: Sanjay Banerjee,University of Texas, MER 1.606B/R9900, Austin,TX, USA 78712 Tel: +1 512 471 6730 Fax: +1512 471 8420 E-Mail: [email protected]: 2/15/01 www: http://www.tms.org/Meetings/ Specialty/DRC/2001/DRC-2001-Home.html

June 30, 2001, T Hong Kong ElectronDevices Meeting Location: Hong Kong Polytech-nic University, Hung Hoom, Kowloon, Hong Kong Contact: Charles Surya, Hong KongPolytechnic University, Dept. of Elec & Info Engi-neering, Hung Hoom, Kowloon, Hong Kong Tel: +852 2766 6220 Fax: +852 2362 8439 E-Mail: [email protected] Deadline: Not Avail-able www: http://www.ee.ust.hk/ieee-eds/hkedm

July 3 - 7, 2001, T Siberian Russian StudentWorkshop on Electron Devices and Materi-

als Location: Novosibirsk State Technical Universi-ty, Novosibirsk, Russia Contact: Alexander Grid-chin, Novosibirsk State Technical University, 20Karl Marx Prospect, Dept. of Applied & TheoreticalPhysics, Novosibirsk, Russia 630092 Tel: +73832 46 0877 Fax: +7 3832 46 0209 E-Mail:[email protected] Deadline: Not Available www:Not Available

July 9 - 13, 2001, T International Sympo-sium on the Physical and Failure Analysisof Integrated Circuits Location: Westin Stam-ford & Westin Plaza Hotels, Singapore, Singa-pore Contact: Kin-Leong Pey, National Universityof Singapore, Dept. of Elec. Engrg., 4 Engineer-ing Drive 3, Singapore, Singapore 117576 Tel:+65 874 6918 Fax: +65 779 7703 E-Mail:[email protected] Deadline: 12/1/00 www:http://www.ewh.ieee.org/reg10/ ipfa/submis-sion.html

July 15 - 20, 2001, T International Confer-ence on Nitride Semiconductors Location:Adam’s Mark Hotel, Denver, CO, USA Contact:Patricia Hastings, Materials Research Society, 506Keystone Dr., Warrendale, PA, USA 15086 Tel:+1 724 779 3003 Fax: Not Available E-Mail:[email protected] Deadline: Not Available www:http://www.mrs.org/meetings/icns-4/

July 29 - August 2, 2001, T Intersociety Ener-gy Conversion Engneering ConferenceLocation: Westin Hotel, Savannah, GA, USAContact: William Turner, Energy Systems Lab,215 Wisenbaker Eng. Research Center, CollegeStation, TX, USA 77843 Tel: +1 979 862 8480Fax: +1 979 862 8687 E-Mail: [email protected] Deadline: 12/31/01 www: NotAvailable

August 6 - 7, 2001, T International Sympo-sium on Low Power Electronics andDesign Location: Hilton Waterfront BeachResort, Huntington Beach, CA, USA Contact:Enrico Macii, Politechnico di Torino Dip. Di Auto-matica e Informatica, Corso Duca degli Abruzzi24, Torino, Italy 10129 Tel: +39 011 564 7074Fax: +39 011 564 7099 E-Mail:[email protected] Deadline: 2/9/01www: http://www.cse.psu.edu/~islped

August 13 - 16, 2001, * International Vacu-um Microelectronics Conference Location:University of California at Davis, Davis, CA, USAContact: Julie Sheehan, 423 First Street, Davis,CA, USA 95616-8766 Tel: Not Available Fax:Not Available E-Mail: [email protected]: Not Available www: ht tp://www.cevs.ucdavis.edu/ Cofred/Public/aca/

* = Sponsorship or Co-Sponsorship Support @ = Alternates support between ‘Sponsorship/Co-Sponsorship’ and ‘Technical Co-Sponsorship’T = Technical Co-Sponsorship Support # = Cooperation Support

EDSEDITOR-IN-CHIEF

Krishna Shenai EECS Department (M/C 154), 1135 SEO The Univ. of Illinois at Chicago Tel: +1 312 996 2633851 South Morgan Street Fax: +1 312 996 0763Chicago, IL 60607-7053 E-Mail: [email protected]

REGIONS 1-6, 7 & 9Eastern and Northeastern USA(Regions 1 & 2)M. Ayman ShibibAgere SystemsBell Laboratories2525 N. 12th StreetP.O. Box 13396Reading, PA 19612Tel: +1 610 939-6576Fax: +1 610 939-3769E-Mail: [email protected]

Southeastern and SouthwesternUSA (Regions 3 & 5)Charles B. Yarling201 W. Stassney, #506Austin, TX 78745-3144Tel: +1 512 306 1493Fax: +1 512 306 0384E-Mail: [email protected]

Central USA & Canada (Regions 4 & 7)Arokia NathanDALSA/NSERC Industrial Research ChairElectrical & Computer EngineeringUniversity of WaterlooWaterloo, Ontario N2L 3GICanadaTel: +1 519 888 4803Fax: +1 519 746 6321E-Mail: [email protected]

Western USA (Region 6)Stephen A. ParkeBoise State University1910 University Dr.Boise, ID 83725USATel: +1 208 426 3842Fax: +1 208 426 4800E-Mail: [email protected]

Latin America (Region 9)Adelmo Ortiz-CondeUniversidad Simon BolivarApdo. 89000Caracas 1080-AVenezuelaTel: +582 906 4010Fax: +582 906 4025E-Mail: [email protected]

REGION 8Eastern Europe & The Former Soviet UnionNinoslav D. StojadinovicFaculty of Electronic EngineeringUniversity of NisBeogradska 14, 18000 NisYugoslaviaTel: +381 18 529 326Fax: +381 18 46 180E-Mail: [email protected]

Scandinavia & Central EuropeMikael L. OstlingRoyal Institute of TechnologyDepartment of Electronics, FTEP.O. Box Electrum 229Royal Institute of TechnologyS-164 40 KistaSwedenTel: +46 8 752 1402Fax: +46 8 752 7850E-Mail: [email protected]

UK, Middle East & AfricaGady GolanCenter for Technical Education and The Open UniversityPO Box 3932816 Klauzner St.Tel Aviv 61392, IsraelTel: +972 3 646 0329Fax: +972 3 646 5465E-Mail: [email protected]

Western EuropeChristian ZardiniLaboratoire IXLUniversite Bordeaux I351 Cours de la Liberation33405 TalenceFranceTel: +33 5 56 84 65 46Fax: +33 5 56 37 15 45E-Mail: [email protected]

REGION 10Australia, New Zealand & South AsiaWee Kiong Choi Dept. of Electrical EngineeringNational University of Singapore10 Kent Ridge CrescentSingapore 119260Tel: +65 874 6473Fax: +65 779 1103E-Mail: [email protected]

Northeast AsiaHisayo Sasaki MomoseMicroelectronics Engineering LaboratoryToshiba Corporation8, Shin-Sugita-cho, Isogo-kuYokohama, 235-8522 JapanTel: +81 45 770 3628Fax: +81 45 770 3575E-Mail: [email protected]

East AsiaTahui WangNational Chiao-Tung UniversityInstitute of Electronics1001 TA Hsueh Rd.Hsin-Chu 30049 TaiwanTel: +886 3 5712121, ext. 54143Fax: +886 3 5724361E-Mail: [email protected]

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E IEEE Electron D Devices Society S NewsletterIEEE Electron Devices Society Newsletter April 20012 Electron Devices Society President Cary Y. Yang Santa Clara University Tel: +1 408