Table of Contents 2007 IEEE International SOI Conference...IEEE Electron Devices Society Newsletter(ISSN 1074 1879) is published quarterly by the Electron Devices Society of the Institute

July 2007 Vol. 14, No. 3 ISSN:1074 1879 Editor-in-Chief: Ninoslav D. Stojadinovic

Your Comments Solicited

Your comments are most welcome. Please write directly to the Editor-in-Chief of the Newsletter at [email protected]

Table of Contents

Upcoming Technical Meetings . . . . . . . . . . 1

• 2007 SOI • 2007 IIRW• 2007 BCTM • 2007 CSICS

EDS President’s Message . . . . . . . . . . . . . . .3Society News . . . . . . . . . . . . . . . . . . . . . . . . 9• EDS Semiconductor Manufacturing

Committee Report• EDS Technology Computer Aided Design

Committee Report• Announcement of Newly Elected AdCom Members• Call for AdCom Nominations• EDS AdCom Election Process • EDS Members Named Winners of the 2007 IEEE

Technical Field Awards• Status Report from the 2006 Graduate Student

Fellowship Winners• IEEE Nanotechnology Council Announces

2007 Award Winners• Call for Nominations for the 2008 IEEE

Nanotechnology Council Awards• Congratulations to the EDS Members Recently

Elected to IEEE Senior Member Grade• EDS Chapter Subsidies for 2008• In Memory of Prof. Gerold Neudeck, Purdue University• EDS Distinguished Lecturers Visit Bhubaneswar, India• EDS Distinguished Lecturer Program

- Lecturers Residing in Eastern USA & Canada• Report on the IEEE EDS Santa Clara Mini-Colloquium • Call for Nominations for the EDS Chapter

of the Year Award• Not an Undergraduate Anymore? EDS Cares!!• How to Form an IEEE Student Branch and Student

Branch ChapterRegional and Chapter News . . . . . . . . . . . 25Correction to the 2006 Education Award Winner Article in the April 2007 Issue . . .33

EDS Meetings Calendar . . . . . . . . . . . . . . . 34Report on Prof. Hiroshi Iwai’s visit to the ED Bangladesh Chapter . . . . . . . . . . . . . .36

The premier conference dedicated to current trends in Silicon-on-Insulator technology will be held October 1–4, 2007 at theluxurious Miramonte Resort & Spa in Indian Wells, California.The conference will be preceded by a one-day tutorial ShortCourse on Monday, October 1, and will introduce a new half-day educational class focusing on the fundamentals of SOItechnology.

The conference was established with the support of IEEE toprovide a forum for open discussion in all areas of silicon-on-insulator technologies and their applications. Ever increasingdemand and advances in this technology make it essential tomeet to discuss new gains and accomplishments, as well as toconsider the new developments introduced in original papers

(continued on page 7)

Miramonte Resort & Spa, Indian Wells, California

2007 IEEE International

SOI Conference

2007 IEEE International

SOI Conference

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2 IEEE Electron Devices Society Newsletter ❍ July 2007

President

Ilesanmi AdesidaUniversity of IllinoisE-mail: [email protected]

President-Elect

Cor L. ClaeysIMECE-mail: [email protected]

Treasurer

Stephen A. ParkeTennessee Tech UniversityE-Mail: [email protected]

Secretary

John K. LowellConsultantE-Mail: [email protected]

Jr. Past President

Hiroshi IwaiTokyo Institute of TechnologyE-mail: [email protected]

Sr. Past President

Steven J. HilleniusSemiconductor Research Corp.E-mail: [email protected]

Vice-President of Awards

Alfred U. Mac RaeMac Rae TechnologiesE-Mail: [email protected]

Vice-President of

Educational Activities

Paul K. L. YuUniversity of California at San DiegoE-Mail: [email protected]

Vice-President of Meetings

Jon J. CandelariaMotorolaE-mail: [email protected]

Vice-President of Membership

Albert Z. H. WangIllinois Institute of TechnologyE-Mail: [email protected]

Vice-President of Publications

Renuka P. JindalUniversity of Louisiana at LafayetteE-Mail: [email protected]

Vice-President of Regions/

Chapters

Juin J. LiouUniversity of Central FloridaE-Mail: [email protected]

Vice-President of Technical Activities

April S. BrownDuke UniversityE-Mail: [email protected]

IEEE Newsletters

Paul Doto, Paul DeSessoIEEE Operations CenterE-Mail: [email protected],[email protected]

Executive Director

William F. Van Der VortIEEE Operations CenterE-Mail: [email protected]

Business Coordinator

Joyce LombardiniIEEE Operations CenterEmail: [email protected]

IEEE Electron Devices Society Newsletter (ISSN 1074 1879) is published quarterly by the Electron Devices Society of the Institute of Electrical and ElectronicsEngineers, Inc. Headquarters: 3 Park Avenue, 17th Floor, New York, NY 10016-5997. Printed in the U.S.A. One dollar ($1.00) per member per year is included in theSociety fee for each member of the Electron Devices Society. Periodicals postage paid at New York, NY and at additional mailing offices. Postmaster: Send addresschanges to IEEE Electron Devices Society Newsletter, IEEE, 445 Hoes Lane, P.O. Box 1331, Piscataway, NJ 08855-1331.

Copyright © 2007 by IEEE: Information contained in this Newsletter may be copied without permission provided that copies are not used or distributed fordirect commercial advantage, and the title of the publication and its date appear on each photocopy.

EDS AdComElected Members-at-Large

Elected for a three-year term (maximum two terms) with ‘full’ voting privileges

2007 Term 2008 Term 2009 Term

J. N. Burghartz (1) G. Baccarani (1) S. S. Chung (2)M. J. Chan (1) J. Deen (1) R. Huang (1)M. Estrada del Cueto (2) F. J. Garcia Sanchez (2) R. P. Jindal (1)S. Ikeda (1) J.B. Kuo (1) M. Lundstrom (2)R. J. Nikolic (1) J.J. Liou (2) H. S. Momose (1)N. D. Stojadinovic (2) H. Shang (1) A. Z. H. Wang (2)J. J. Wesler (1) J. W. Swart (1) X. Zhou (2)

S. Tyagi (1)

ELECTRON DEVICES

SOCIETY

ELECTRON DEVICES

SOCIETY

CONTRIBUTIONS WELCOMECONTRIBUTIONS WELCOME

Readers are encouraged to submit news items concerning the Societyand its members. Please send your ideas/articles directly to either the Edi-tor-in-Chief or appropriate Editor. The e-mail addresses of these individu-als are listed on this page. Whenever possible, e-mail is the preferredform of submission.

Newsletter DeadlinesIssue Due Date

January October 1stApril January 1stJuly April 1stOctober July 1st

The EDS Newsletter archive can be found on the Society web site athttps://www.ieee.org/portal/pages/society/eds/pubs/newsletters/newsletter.html. The archive contains issues from July 1994 to the present.

REGIONS 1-6, 7 & 9

Eastern, Northeastern & South-

eastern USA (Regions 1, 2 & 3)

Ibrahim M. Abdel-MotalebNorthern Illinois UniversityE-Mail: [email protected]

Central USA & Canada

(Regions 4 & 7)

Jamal DeenMcMaster UniversityE-Mail: [email protected]

Southwestern & Western USA

(Regions 5 & 6)

Sunit TyagiIntelE-Mail: [email protected]

Latin America (Region 9)

Jacobus W. SwartState University of CampinasE-mail: [email protected]

REGION 8

Eastern Europe & The Former

Soviet Union

Alexander V. GridchinNovosibirsk State Technical UniversityE-mail: [email protected]

Scandinavia & Central Europe

Andrzej NapieralskiTechnical University of LodzE-Mail: [email protected]

UK, Middle East & Africa

Zhirun HuUniversity of ManchesterE-mail: [email protected]

Western Europe

Cora SalmUniversity of TwenteE-Mail: [email protected]

REGION 10

Australia, New Zealand &

South Asia

Xing ZhouNanyang Technological UniversityE-Mail: [email protected]

Northeast Asia

Kazuo TsutsuiTokyo Institute of TechnologyE-mail: [email protected]

East Asia

Hei WongCity University of Hong KongE-Mail: [email protected]

Editor-In-Chief

Ninoslav D. StojadinovicUniversity of NisE-Mail: [email protected]

NEWSLETTER

EDITORIAL STAFF

NEWSLETTER

EDITORIAL STAFF

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July 2007 ❍ IEEE Electron Devices Society Newsletter 3

How time flies! Ithas been a yearthat I expressedhere on this pagethe special honorof serving as thePresident of ourgreat Society, theIEEE ElectronDevices Society.The Presidents of

our Society serve two-year terms andmine will be ending at the end of thiscalendar year. Although, the term willbe ending, my service to the Societywill not. I still have duties as Past-Presi-dent for the next many years which Iwill joyfully fulfill in order to make ourSociety stronger and more vibrant forour time and for the future. I call uponall members to strive for service and tocontribute to the well-being of ourSociety.

As we have ascertained in the pastand continue to stress, the informationrevolution that we are witnessing is theproduct of the science and technolo-gies that emanated from our members;and we can say that the world is betteroff due to the fruits of our labor. This isa legacy that we must not only pre-serve, but must continue to embellish.The question is how do we do this?Membership development and the cre-ation of new chapters to accommodateand serve our members are critical ele-ments in this quest. Membership afflia-tions with societies in the IEEE havedeclined to some extent; and we havenot been left out of that trend. Where-as, the decline for our Society has beenless than average, we are makingefforts to reverse this trend.

Many initiatives (both old and new)are being developed and pursued tocultivate new members, develop futureleaders, and to increase the value ofmembership. We are developing aCareer Guide on CD/DVD for studentsat various stages of their education toconsider engineering as a career. Weare all aware of the lack of interest inthe sciences and engineering by stu-dents all the way to grade school levelswhich has been cogently pointed out in

the United States’ National Academy ofEngineering’s study under the title“Rising Above the Gathering Storm:Energizing and Employing America fora Brighter Economic Future.” The chal-lenge is not limited to the United Statesonly but actually germane across sig-nificant parts of the world. Thereforeany effort that we can make in sensitiz-ing our young ones to the dynamicnature and the impact of the sciencesand engineering on all our lives isimportant. Our GOLD members will beintimately involved in this CD/DVD pro-ject. This is a path to developing futureleaders for our Society. A GOLD Con-ference to be held in conjunction withthe IEDM is also under development.The ideas and energies of our GOLDmembers are cardinal to developingstrategies for engaging students asnew members.

Our globalization strategy is beingstrongly continued. It has become atradition of the Society to hold the mid-year executive and administrative com-mittee meetings at sites outside of theUnited States. Last year, it was held inNaples (Italy), and this year, it was heldin Beijing, China. In both cases, region-al chapters meetings were also held.Membership is growing in Region 10which reflects intense activities in semi-conductor manufacturing in the region.Our Vice President for Regions/Chap-ters, Juin Liou, the Vice President forMembership, Albert Wang, and othershave done a great job over the last fewyears in developing memberships andgrowing chapters in this region. Therehave been additions to both regularand student chapters in India, China,Korea, Australia, Taiwan, and manyother countries in the region. Theywere all well represented at the recentmeeting in Beijing. There are newdevelopments in Region 9 (Latin Amer-ica) with increasing interests in EDS.There will be a Region 9 Chaptersmeeting in Brazil in September thisyear. EDS chapter subsidies have beenincreased this past year to amplifyactivities in all these chapters, andindeed, in our chapters across theworld.

EDS continues to encourage andpromote its fairly unique concept ofmini-colloquia, using it as a means tobring together chapter members anddisseminate technical information aswell as increase the value of EDS mem-bership. For 2006, EDS held eight mini-colloquia, primarily in Region 10 (Asia& Pacific), although events were held inthe US and Italy as well. Five colloquiahave been held so far in 2007 withthree more already scheduled for laterin the year. The vitality of the mini-col-loquia concept and its value to EDScontinue to increase each year. Itshould also be mentioned that themini-colloquia concept was an out-growth of the EDS Distinguished Lec-turer Program which continues toserve our chapters and membersexceptionally well reaching all-timehighs in 2006 of 152 lectures per-formed by 71 different lecturers.

As previously reported, EDS hasbeen participating in the IEEE program,Expert Now, whereby one-hour educa-tional courses and tutorials from con-ferences are developed and madeavailable online at a low cost to IEEEmembers. There are currently aboutsixty courses available and twenty orso in development, with EDS servingas the sponsor and providing the tech-nical content for seven of them. Also inthe area of Education, EDS has expand-ed its Graduate Student FellowshipProgram to now offer fellowships tostudents pursuing their ‘Masters’degree, as well as those who areattempting to obtain their PhDs. This isthe first year of the EDS Masters Stu-dent Fellowship Program. Finally in thearea of Education, EDS announced itsfirst winner of a new Education Awardat the IEDM this past December. ThisAward was developed to recognize anIEEE/EDS member from an academic,industrial or government organizationwith distinguished contributions toeducation within the field of interest ofEDS.

One new membership benefit closeto being released is QuestEDS. This is a


EDS President’s MessageEDS President’s Message

Ilesanmi Adesida

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The 2007 IEEE Bipolar/BiCMOS Cir-cuits and Technology Meeting willbe held from September 30, 2007 toTuesday, October 2 at the BostonMarriott Long Wharf Hotel inBoston, Massachusetts (http://mar-r io t t . com/hote ls / t rave l /bos lw-boston-marriott-long-wharf).

You will want to be at this confer-ence if you’re interested in the leadingedge processes, devices, and circuitsused in state of the art telecommuni-cation systems and power control sys-tems. Bipolar and BiCMOStechnologies, particularly SiGe HBTBiCMOS technologies, continue toplay a key role in these systems.

Papers covering the design,performance, fabrication, testingand application of bipolar andBiCMOS integrated circuits, bipo-lar phenomena, and discrete bipo-lar devices are presented.

Boston’s harbourfront district isthe city’s center for exploration byland and by sea. Follow the red brickcobblestones of the Freedom Trail tohistoric sites of the American Revo-lution. Pass through ChristopherColumbus Park to the North End,once the gateway for newcomers toNew England and now the locationof spirited caffes and restaurantgems. At the Faneuil Hall Market-place, you will find what you arelooking for in the variety of shopsand pubs located in a building char-acteristic of Boston’s 18th centuryarchitecture. The conference will beheld during the fall season when theautumn leaves begin to change andthe city is energized by interactionsbetween students, researchers, andinnovative industry and commerce.For details on local attractions andactivities and to learn more aboutthe city, please follow this link to thecity of Boston’s visitor web guide:(http://www.cityofboston.gov/visi-tors/thingstodo.asp).

The conference starts with aone day short course, followed bytwo full days of contributed andinvited papers, including a specialsession on Emerging Technolo-gies. The BCTM Banquet will be

held on Monday evening at theNew England Aquarium, locatedat Long Wharf. Following the con-ference on Wednesday, there willbe a workshop on compact model-ing for RF/Microwave applicationsorganized by TU Delft.

We are fortunate to have Dr.Tak H. Ning for the keynote. Dr.Ning and his colleagues inventedand developed the polysil icon-emitter self-aligned bipolar tran-s is tor , which is the basis ofmodern bipolar transistor technol-ogy. This is a great opportunity tocome and hear Dr. Ning speak.

The short course features threerenowned experts on “Bipolar ICDesign Beyond Handsets and IntoMillimeter Waves: Challenges andOpportunities for Power Amplifierand mm-wave Transceiver ICDesign.” Short course invitedspeakers include:

• “Bipolar-based Power Amplifi-er design Beyond Handsets andinto MM-wave integrated circuits:Design, Modeling, Characteriza-tion, Packaging, Reliability” LarryLarson (UCSD, USA)

• “MM-wave SiGe BiCMOS cir-cuit design for automotive appli-cation” Herbert Knapp (Infineon,Germany)

• “MM-wave SiGe BiCMOS cir-cuit design for mm-wave applica-tion” Brian Floyd (IBM, USA)

Invited speakers include:• “On the Feasibility of few-THz

Bipolar Transistors” Mark Rodwell(UCSB, USA)

• “Device, Antenna and Packag-ing Technology for MM Applica-tions” Brian Floyd, (IBM, USA)

• “Satellite radio” A Maxim (Sil-icon Laboratories, USA)

• “Chal lenges in Design ofVery-High-Speed Si-Bipolar IC’sOperat ing up to 100 Gbi t /s”Michael Möller (Saarland Univer-sity, Germany)

• “SOI-based devices and tech-nologies for High Voltage ICs”Florin Udrea (Univ. Cambridge, UK)

Two days of technical papersessions, a luncheon with guestspeaker, exhibits and the eveningbanquet round out the program.Booths feature the latest productsof interest to the bipolar commu-nity. The banquet will be held atBoston’s New England Aquariumfeaturing the 4-story tall GiantOcean Tank, a 200,000 gal lonocean habitat coral reef home toseaturtles, sharks, moray eels andover 50 species of tropical fish.We look forward to you joining usand connect ing with your col -leagues at this year’s BCTM. Findfull details and registration for theconference on the conference webpage (http:// www.ieee-bctm.org).

See you in Boston!

Yih-Feng Chyan2007 BCTM General Chair

BroadcomIrvine, CA, USA

Upcoming Technical MeetingsUpcoming Technical Meetings

Boston Marriott Long Wharf Hotel, Boston,Massachusetts

2007 IEEE BIPOLAR/BiCMOS CIRCUITS

AND TECHNOLOGY MEETING (BCTM)

2007 IEEE BIPOLAR/BiCMOS CIRCUITS

AND TECHNOLOGY MEETING (BCTM)

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The 2007 International IntegratedReliability Workshop (IIRW), spon-sored by the IEEE Reliability Societyand the IEEE Electron Devices Soci-ety, will be held at the Stanford Sier-ra Camp on the shore of Fallen LeafLake near South Lake Tahoe, CAfrom October 15-18, 2007. This work-shop provides a unique forum foropen and frank discussions of allareas of reliability research and tech-nology for present and future semi-conductor applications. Please visitwww.iirw.org for the Call for Papersand to submit your abstract to theTechnical Program Chair, PatrickLenahan, Pennsylvania State Univer-sity, ([email protected]). Thesubmission deadline is July 13, 2007.

The IIRW is very different from atypical technical conference. Fromthe moment you arrive, after wind-ing slowly back to the south shore ofFallen Leaf Lake, you realize that youare taking part in something special.Attendees stay in cabins without TVsor phones, dress is casual to rustic,affiliations are downplayed, andmeals are provided at the lodge din-ing room, family-style. Attendees ofthe workshop are expected to partic-ipate actively. You feel yourselfdrawn into technical discussionsfrom the start. Every aspect of thisconference, from the isolated loca-tion to the format of the technicalprogram, is designed to encourageattendees to interact.

The peaceful setting, free fromthe distractions and annoyances ofmodern life, presents a terrificopportunity to get to know your col-leagues, including internationallyrenowned experts. This is an oppor-tunity not usually available at otherconferences. In addition to the tech-nical presentations, participantsspend their evenings at discussiongroups, poster sessions, and specialinterest groups (SIGs), all withrefreshments provided to stimulatediscussions. Expanded versions ofselected workshop manuscripts willbe published in an Integrated Relia-bility Workshop Special Proceedings

Issue of IEEE Transactions in Deviceand Material Reliability (TDMR),June 2008.

This year’s IIRW 2007 KeynoteTopic is: “Microelectronics for SpaceApplications - Challenges andOpportunities”, presented by Sam-my Kayali, Mission Assurance Man-ager, Jet Propulsion Laboratory.

Another advantage of attendingthe IIRW is the extensive TutorialCourses, presented by world-classexperts and included at no addition-al cost. This year’s tutorial coursescover Electron Spin Resonance, Reli-ability in BEOL High-k, SRAM andFLASH Memory, Radiation Effects,Failure Analysis Techniques.

One unique aspect of this work-shop is the opportunity for everyattendee to present a poster of his orher own research. Either arrange forspace when you register or bringlast-minute results in your briefcaseor backpack. This is a great way toshare your latest results and to getworld-class feedback. The openposter sessions are but one exampleof the opportunities for the intenseinteraction that sets the IIRW apartfrom other conferences.

Another distinction of the IIRW isthe moderated Discussion Groupsthat are held in the evenings. Thisyear’s Discussion Group Topicsinclude: 1) High-k Gate Dielectrics, 2)

NBTI, 3) Interconnects, and 4) Prod-uct and Memory Reliability. Livelyconversation and debate among par-ticipants is promised and writtensummaries will be included in theworkshop proceedings.

The Discussion Groups are fol-lowed by the Special Interest Groupmeetings (SIG). The SIGs are com-posed of small groups ofresearchers and engineers with amutual interest who often continuetheir conversations and collabora-tions even after they leave the work-shop. Every attendee has theopportunity to become part of anexisting SIG or suggest a new topicand start one of their own.

Additional information about theworkshop is available on the IIRWwebsite at www.iirw.org, or by con-tacting Yuan Chen, JPL([email protected]), 2007IIRW General Chair. If you want totake part, please register early asspace at the Stanford Sierra Camp islimited to roughly 120 attendees.

On behalf of the 2007 Internation-al Integrated Reliability WorkshopCommittee, I look forward to meet-ing you in Lake Tahoe!

George Goffman2007 IIRW Communications Chair

Medtronic Inc.Tempe, AZ, USA

Stanford Sierra Camp on the shore of Fallen Leaf Lake, near South Lake Tahoe, California

2007 IEEE International Integrated

Reliability Workshop (IIRW)

2007 IEEE International Integrated

Reliability Workshop (IIRW)

14eds03.qxd 6/22/07 11:02 AM Page 5

We cordial ly invi te you to the2007 Compound SemiconductorIC Symposium being held October14 – 17 in beautiful Portland, Ore-gon. The high-performance wire-less and h igh-speed d ig i ta lcommunicat ions markets arethriving due to impressive stridesin new mater ia ls and devices,greater integration levels, novelc i rcu i t implementat ions , andever-changing systems partitions.Over the last 29 years the Com-pound Semiconductor IC Sympo-sium (CSICS – formerly namedthe GaAs IC Symposium) hasbeen and continues to be the pre-eminent international forum inwhich advances in semiconductorcircuit and device technology arepresented, debated, and d is -cussed. The scope of the Sympo-sium encompasses devices andcircuits in GaAs, SiGe, InP, GaN,and InSb as well as targeting thefields of RF/mm-Wave CMOS andhigh-speed digital CMOS to pro-vide a truly comprehensive con-ference. This is the ideal forumfor presentat ion of the la testresults in high-speed digital, ana-log, microwave/ millimeter wave,mixed mode, and optoelectronicintegrated circuits.

This year’s 2007 CSIC Sympo-sium is comprised of a full 3-daytechnical program, 2 short cours-es, a primer course, and a tech-nology exhibition. The technicalprogram consists of approximate-ly 60 high quality state-of-the-arttechnical papers, 4 panel ses-sions, 2 Short Courses on “Com-pound Semiconductor Devicesand Integrated Circuits for Mil-l imeter Wave Imaging” and“Compound Semiconductor Pow-er Amplif iers” and an IndustryExhibit. The Symposium will alsobe offering the popular annual

introductory level Primer Courseon “Basics of Compound Semi-conductor ICs”. This year theSymposium will feature approxi-mately 15 invi ted papers on a

wide range of important topicsencompassing device engineeringto c i rcui t appl icat ion usingadvanced compound and otherrelated semiconductor technolo-gies. In addition, the Symposiumwil l cont inue the t radi t ion ofincluding important “late breakingnews” papers.

The technology exhibition willbe held on Monday and Tuesday.The exhibition will feature infor-mative and interesting displayswith corporate representatives onhand. The list of exhibitors can befound in the CSICS advance pro-gram which will be published anddistributed in late June. To com-plement the Symposium, thereare several social events whichinclude the Sunday EveningCSICS Opening Reception, theMonday CSICS Exhibition Open-ing Reception, the CSICS Tuesdayevening Theme Party to be held atMcMenamins Pub and BreweriesCrystal Ballroom, and the CSICSExhibition Luncheon on Tuesday.

The Theme Party wi l l inc ludeentertainment and a tasting oflocally produced Oregon wine andbeer . A breakfast wi l l a lso beserved on Monday, Tuesday, andWednesday

The 2007 IEEE CSICS will beheld in Portland, Oregon in theHi l ton Port land and Execut iveTower located in downtown Port-land. Proclaimed as North Ameri-ca’s “Best Big City,” accordingto Money magaz ine , Por t landexhibits unmatched natural beau-ty as well as a wealth of opportu-ni t ies for le isure, sports ,shopping, and outdoor activities.The conference downtown loca-tion is within easy access to thevibrant Pearl District with destina-tion restaurants, art galleries, andshopping. While you’re in Port-land, be sure to enjoy the scenicbeauty of the Columbia RiverGorge, enjoy the hike to Multnom-ah Falls and the drive the HistoricColumbia River Highway. Otherlocal attractions include Mt Hood,the Willamette River, the rose gar-dens, the Japanese garden, theOregon Coast, and the wine coun-try. Portland has an excellent lightrail system which can be used astransportation from the Airport tothe Hilton and for getting aroundtown.

For registrat ion and furtherinformation, please visit the CSICSwebsite at http://www.csics.org.Further quest ions may beaddressed to the SymposiumTechnical Program Chair: WilliamPeatman, Ph: +1-908-668-5000 ext.5842, Email: [email protected]. We hope you can attend.

Dan Scherrer2007 CSICS Publicity Chair

Northrop GrummanRedondo Beach, CA, USA


2007 IEEE Compound

Semiconductor IC Symposium (CSICS)

2007 IEEE Compound

Semiconductor IC Symposium (CSICS)

View of Mt. Hood from the Hilton Portland &Executive Tower

14eds03.qxd 6/22/07 11:02 AM Page 6


presented at the conference. The33rd annual IEEE International SOIConference will begin with a half-day plenary session followed bytwo days of oral sessions, a postersession and a late news session.Also new this year, two Best PaperAwards will be presented at theconference; one for the best oralpresentation and one for the bestposter presentation.

Participants are free on Wednes-day afternoon to explore the desertresort area of Palm Springs, enjoy atreatment at The Well (the Mira-monte’s own world famous spa), geta little work done, or just relax. Anevening discussion panel sessionwhere attendees are encouraged toshare their opinions and expertiseon the chosen topics of discussionwill round off Wednesday evening.

Also on Wednesday afternoon,the conference is introducing anoptional, intermediate-level classintended for individuals from a vari-ety of fields including circuit design,material scientists/engineering,process technology, modeling, anddevice design. This inaugural SOIfundamentals class will cover thebasics of SOI device design andcharacterization and will provideattendees with a broad perspectiveof SOI MOSFET operation and thecharacterization of SOI materialsand devices.

The 2007 SOI Conference seekspapers on a wide range of SOI tech-nology including: • SOI material science/modification,

material characterization, manu-facture and substrate engineering

• SOI device physics and modeling• Manufacturability and process

integration of SOI devices and cir-cuits

• SOI design infrastructure• SOI circuit applications (high-per-

formance MPU, SRAM, ASIC, lowpower, high-voltage, rf, analog,mixed mode, etc.)

• Double & Multiple Gate/Vertical

Channel Structures; Other NovelStructures

• New SOI structures, Circuits, andapplications (3D integration, dis-plays, microactuators - MEMS,microsensors, novel memories,optics, etc.)

• SOI reliability issues (hot-carriereffects, radiation effects, high-tem-perature effects, etc.)

• Engineered substrates

Abstracts for SOI 2007 Conferencewere due May 4, 2007. Late newspapers with exceptional merit will beconsidered for the Late News ses-sion if submitted on or beforeAugust 20, 2007 to: conference man-agement, by e-mail ONLY to [email protected] in PDF format.

Once again, the popular One-DayTutorial Short Course will be offeredpreceding the 2007 SOI InternationalConference. Tutorial Short Courseinstructors have many years of experi-ence in the field of silicon-on-insulatortechnology. The course is intended to

educate attendees in detail about cur-rent trends and issues in the SOIindustry. The 2007 tutorial ShortCourse is entitled “SOI Devices andProcess Technologies” and will pre-sent a comprehensive overview ofadvanced SOI device and processtechnologies from the viewpoint ofspecific circuit applications includinghigh performance, low power, rf,multigate, imagers and 3D circuits.Participants will receive copies of allvisual presentations.

For registration forms and addition-al information, please go to the confer-ence web site www.soiconference.org,or contact the 2007 IEEE InternationalSOI Conference at 520 WashingtonBlvd., #378, Marina del Rey, CA 90292,Tel: 310-305-7885; Fax: 310-305-1038;Email: [email protected].

Christophe Tretz2007 SOI Publicity & Development Chair

IBMSan Jose, CA, USA

(continued from page 1)

2007 IEEE International SOI Conference

Miramonte Resort & Spa, Indian Wells, California

14eds03.qxd 6/22/07 11:02 AM Page 7


free service whereby EDS memberscan submit questions online in theEDS Field of Interest and EDS expertswill provide the answers which will beposted online as well. The target turn-around time from the date of submis-sion of an online request to the date ofonline posting of an answer will betwo weeks. Another publication-relat-ed benefit to take effect this year is afree subscription to a new magazinebeing developed by the Nanotechnol-ogy Council, i.e., the NanotechnologyMagazine. At its December 2006 meet-ing, the EDS AdCom voted to provideEDS members with a free two-yearsubscription to the Magazine. The

EDS AdCom also voted at its Decem-ber 2006 meeting to join the soon-to-be-formed IEEE TechnologyManagement Council (formerly theIEEE Engineering Management Soci-ety) as a sustaining member. Webelieve EDS members will find such adecision to be very useful in this dayof increased entrepreneurial activities,providing them with a chance to learnand participate in the Council’s activi-ties. EDS also has a long-term initia-tive to add the legacy proceedings(prior to 1988) of its conferences toIEEE Xplore to further enhance thetechnical content available online toits members.

So you can see from the number ofinitiatives and activities I have men-tioned that EDS has made increasingthe value of membership an extremelyhigh priority. We welcome any com-ments or suggestions you may haveconcerning our future membershipstrategies and offerings. My sincerethanks for maintaining your IEEE andEDS memberships and we hope tocontinue to bring you new and excitingbenefits in the future.

Ilesanmi AdesidaEDS President

University of IllinoisUrbana, IL, USA

(continued from page 3)

EDS President’s Message

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Society NewsSociety News

During the pasttwo years, theIEEE EDS Semi-conductor Manu-facturing TechnicalCommittee hasgrown from 10 to13 members. Inkeeping with ourgoal to furtherdiversify the mem-

bership internationally, the committeenow has members from the U.S.,Japan, Korea, Taiwan, Germany, andEgypt.

At the time of this writing, sev-eral of the committee members areattending the 2007 InternationalConference on Frontiers of Charac-terization and Metrology for Nano-electronics, which is being heldMarch 27-29, 2007, at the NationalInstitute of Standards and Technol-ogy (NIST) in Gaithersburg, Mary-land. This year, we have arrangedfor the conference to be technicallyco-sponsored by the IEEE EDS. Theprevious meeting of this confer-ence was in 2005, after which thecommittee put together a selectionof conference papers that wereaccepted for a special section inthe November, 2006 edition of theIEEE Transactions on Semiconduc-tor Manufacturing (TSM). We planto do the same with a few out-

standing papers from this year’sconference.

During 2006, our committeemembers were active in organizingand speaking at quite a few confer-ences/sessions on semiconductormanufacturing, including: the Inter-national Symposium on Semicon-ductor Manufacturing (this will feedseveral special sections of the TSM),Nanotechnology in Society andManufacturing (a special session co-sponsored by the Corporate Associ-ates of the American Institute ofPhysics at the 2006 Meeting of theAmercan Vacuum Society), the 2006SEMI NanoForum/NanoUniversity(co-sponsored with the IEEE), andthe 2006 Semiconductors, Automat-ed Manufacturing, Electronics –Training and Education Conference(SAME-TEC).

A large project for several of ourcommittee members this year is the2007 edition of the International Tech-nology Roadmap for Semiconductors(ITRS). Since this is the 15th anniver-sary edition of the ITRS its “currentyear” coincides with the 15-year hori-zon of the inaugural 1992 NTRS, whichmakes for interesting comparisons! It’salso the first edition for which the hori-zon extends beyond 2020, which hasbeen set as a target by the Semicon-ductor Industry Association (SIA) forthe introduction of a “beyond CMOS”

logic technology. In our previous(2005) article for the EDS Newsletter,the SIA had just launched the Nano-electronics Research Initiative (NRI)with the goal of identifying potentialbeyond-CMOS device concepts. Sincethen, several of our committee mem-bers have been active in the NRI pro-gram, which now sponsors threemulti-university Nanoelectronics Cen-ters and partners with the NSF to co-fund nanoelectronics supplements toseveral NSF Nanotechnology Scienceand Engineering Centers (NSECS) andMaterials Research Science and Engi-neering Centers (MRSECS). Much ofthe work in these centers is aimed atdeveloping new computational statevariables such as spin, pseudo-spin,quantum phase, or molecular state,rather than the traditional “bulkcharge.” Of course, we anticipate thatnew directions in manufacturing,metrology, and characterization mightbe required to produce integrated cir-cuits based on these device concepts,and the Semiconductor ManufacturingTechnical Committee is definitely inter-ested in helping EDS members keepup with the emerging possibilities.

Robert R. DoeringEDS Semiconductor Manufacturing

Committee ChairTexas Instruments, Inc.

Dallas, TX, USA

Robert R. Doering

EDS Semiconductor Manufacturing

Committee Report

EDS Semiconductor Manufacturing

Committee Report

The EDS Tech-nology Comput-er Aided DesignTechnical Com-mittee (TCADTC)continues to makeprogress towardsthe goal to im-prove the capa-bility of Modeling

and Simulation of Process, Device,and Manufacturing for IntegratedCircuits to fulfill the growing needsof the electron device community.The Committee pursues these goalsby proposing special journal issuesto cover important Modeling andSimulation topics, organizing panelsessions and short courses at majorconferences, providing suggestions

for invited speakers in the Modeling& Simulation areas at EDS spon-sored international conferences.

In June 2006 the Committeelaunched a Call for Papers for a SpecialIssue of the IEEE Transactions on Elec-tron Devices on “Simulation and Mod-eling of Nanoelectronics Devices”. Theaim is to present the advances in thistopic to a device oriented communityEnrico Sangiorgi

EDS Technology Computer Aided

Design Committee Report

EDS Technology Computer Aided

Design Committee Report

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On December 10, 2006, the EDSAdCom held its annual election of offi-cers and members-at-large. The follow-ing are the results of the election andbrief biographies of the individualselected.

I. OFFICERSThe following individuals were elect-ed as officers for a one-year termbeginning 1/1/2007:

STEPHEN A.PARKE (Trea-surer) receivedthe BS and MSdegrees in electri-cal engineeringfrom Purdue Uni-versity in 1984. Hethen joined IBM

Microelectronics where he worked indevice and process development forthe 4Mb, 16Mb, and 64Mb DRAMdesigns. In 1989, he was awarded anIBM Ph.D. Fellowship, and joined theUC Berkeley Device Research group,where he studied the behavior of deep-sub-micron MOSFET and lateral bipo-lar transistors on thin-film SOI. In 1993,he received the Ph.D. degree andjoined the IBM Semiconductor R&DCenter in Fishkill, NY where he workedin the 256Mb DRAM Triad alliancebetween IBM, Toshiba, and Infineon.

This effort accelerated the 0.25 micronprocess development, leading to theworld’s first fully-functional 256 MbDRAM chip in 1995.

In 1996, he joined the ElectricalEngineering faculty of Boise State Uni-versity at the inception of its new Col-lege of Engineering. He helped lead thecreation and development of the ECEDepartment at BSU over its first tenyears. Dr. Parke has a passion for tech-nology transfer. In Boise, he advisedthree start-up companies in the elec-tronics field, and currently serves onthe Board of Directors of AmericanSemiconductor, Inc.

In 2006, Dr. Parke joined TennesseeTech University as Professor and Chairof the TTU Electrical and ComputerEngineering Dept. Dr. Parke’s researchis in the areas of Double-GatedNanoscale Silicon-On-Insulator Transis-tors and Non-Volatile Memories. Heholds ten US patents with five pending.He is the co-inventor of the DTMOS andFlexFET transistors. He has publishedand/or presented over 30 papers. Hehas served the IEEE Electron DevicesSociety as Graduate Student Fellow-ship Chair, WMED General Chair, UGIMGeneral Chair, and currently as theTreasurer. He received the IEEE Millen-nium Medal in 2000 for his service. Heis also a member of Tau Beta Pi and EtaKappa Nu honorary societies.

JOHN K. LOWELL(Secretary) receivedthe Ph.D. degree inApplied Physicsfrom the Universityof London. He hasheld technical andmanagerial assign-ments for United

Technologies, Northern Telecom,Mostek, Texas Instruments, BritishTelecom/Dupont, AMD, Applied Mate-rials, Oracle and PDF Solutions.Presently, he is the President and ChiefConsultant at Lowell Consulting in Dal-las. He has also been a Professor atTexas Tech University and in the Uni-versity of Texas system, and held Con-sulting Professorships at otheruniversities in addition to being a Visit-ing Scholar at the NSF Center for theSynthesis, Growth and Characteriza-tion of Electronic Materials at the Uni-versity of Texas at Austin.

Dr. Lowell is a Senior Member of theIEEE, a Distinguished Lecturer of theEDS and has held AdCom-level posi-tions previously within the LEO andCAS societies. For fifteen years, he wasalso the Associate Editor-in-Chief of theIEEE Division I Circuits & Devices Maga-zine, and was its Guest Editor twice.

ADCOM MEMBERS-AT-LARGEA total of seven persons were elected

represented by the readers of the IEEETransactions on Electron Devices.

The contributions will addressadvances in physical models andmodeling methodologies in the fol-lowing areas: process modeling,device modeling, process equipmentmodeling, atomistic modeling, topicson manufacturability and variability.

The EDS TCAD Technical Committeewill act as the Guest Editor for this spe-cial issue. Enrico Sangiorgi, Chairman ofthe Committee, will be the responsiblefocal point. Numerous invited and con-tributing papers contributions were sub-mitted and right now the review processis in place. Scheduled publication date isSeptember 2007.

Effective January 1, 2007, theTCAD committee has 13 membersrepresenting a very wide spec-

trum of technical expertise rang-ing f rom process to device tomanufactur ing s imulat ion andmodeling.

The present members are:• Enrico Sangiorgi (University of

Bologna, Italy) – Chair. • Asen Asenov (Glasgow University,

UK) • Herbert S. Bennett (National Insti-

tute of Standards and Technology,Gaithersburg, MD, USA)

• Robert W. Dutton (Stanford Uni-versity, Stanford, CA, USA)

• David Esseni (Univers i ty ofUdine, Italy)

• Martin D. Giles (Intel Corporation,Hillsboro, OR, USA)

• Masami Hane (NEC Corporation,Sagamihara, Japan)

• Christoph Jungemann (Universityof the Armed Forces, Munich,Germany)

• Kenji Nishi (Kinki University Tech-nical College, Mie, Japan)

• Marcel D. Profirescu (TechnicalUniversity of Bucharest, Romania)

• Siegfried Selberherr (TechnicalUniversi ty of Vienna, Wien,Austria)

• Shinichi Takagi (The University ofTokyo, Japan)

• Paul D. Yoder (Georgia Institute ofTechnology, Savannah, GA)

Enrico SangiorgiEDS TCAD Technical

Committee ChairUniversity of Bologna

Bologna, Italy


ANNOUNCEMENT OF NEWLY ELECTED

ADCOM MEMBERS

ANNOUNCEMENT OF NEWLY ELECTED

ADCOM MEMBERS

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to three-year terms (2007-2009) asmembers-at-large of the EDS AdCom.Four of the seven individuals were re-elected for a second term, while theother three were first-time electees.The backgrounds of the electees spana wide range of professional andtechnical interests.

A. SECOND TERM ELECTEES:STEVE S. CHUNGreceived his Ph.D.degree from theUniversity of Illi-nois at Urbana-Champaign, inElectrical Engi-neering in 1985.Currently, he is an

NCTU Chair Professor and UMC ChairProfessor at the National Chiao TungUniversity (NCTU), where he is also aCEO of a 5Y50B Aiming for Top-Uni-versity plan. He was a Visiting Scholarwith Stanford University in 2001. Hewas also the consultant to TSMC ondeveloping CMOS and flash memorytechnologies. His current researchareas include CMOS devices, flashmemory technology and reliability.He has published more than 150 jour-nal and conference papers, one text-book, and holds 20 patents.

He is an IEEE Fellow, AdCom mem-ber, Distinguished Lecturer, Regions/Chapters Vice-Chair of EDS, and Editorof EDL. He has served on premiereconferences, e.g., VLSI Technology,IEDM, IRPS, etc. ED Taipei chapter wasawarded the 2002 EDS Chapter of theYear Award under his leadership as theChapter Chair. He received 3 times out-standing Research Award for excel-lence in research, and was also grantedDistinguished EE Professor and Engi-neering Professor by the EngineeringSocieties of Taiwan.

MARK S.LUNDSTROMis the Don and Car-ol Scifres Distin-guished Professorof Electrical andComputer Engi-neering at PurdueUniversity where

he directs the NSF’s Network for Com-putational Nanotechnology. He earnedhis bachelor’s and master’s degreesfrom the University of Minnesota and

joined the Purdue faculty upon com-pleting his doctorate there in 1980.Before attending Purdue, he worked atHewlett-Packard Corporation. Lund-strom is a Fellow of the IEEE, the Ameri-can Physical Society, and the AmericanAssociation for the Advancement ofScience. He is the recipient of severalawards for teaching and research, mostrecently the 2006 Education Awardfrom the IEEE Electron Devices Society.

ALBERT WANGreceived his B.Eng. and PhDdegrees in EE fromTsinghua Universi-ty, China, and StateUniversity of NewYork at Buffalo in1985 and 1996,

respectively. From 1995 to 1998, he waswith National Semiconductor Corp. Hejoined the Faculty of ECE at the IllinoisInstitute of Technology in 1998. Hisresearch center on RF/Analog/Mixed-Signal ICs, on-Chip ESD Protection, ICCAD and Modeling, SoCs and NanoDevices, etc. He received the NSFCAREER Award in 2002. He authoredone book and 110+ papers. He is an Edi-tor for IEEE Electron Device Letters, anAssociate Editor for IEEE Transactionson Circuits and Systems. He is an IEEEDistinguished Lecturer for the ElectronDevices Society and the Solid-State Cir-cuits Society. He currently serves asVice President for IEEE Electron DevicesSociety and on the ITRS Committee.

XING ZHOU re-ceived his B.E.degree in electricalengineering fromTsinghua Universi-ty in 1983, M.S. andPh.D. degrees inelectrical engineer-ing from the Uni-

versity of Rochester in 1987 and 1990,respectively. He is currently an Associ-ate Professor in the School of Electricaland Electronic Engineering, NanyangTechnological University, Singapore.His past research interests includeMonte Carlo simulation of photo carriertransport and ultra fast phenomena aswell as mixed-mode circuit simulationand CAD tool development. His recentresearch mainly focuses on nanoscaleCMOS technology and device compact

modeling. He is a Senior Member ofthe IEEE, an editor for IEEE ElectronDevice Letters, Chair of the EDS AsiaPacific Subcommittee for Regions/Chapters, a member of the EDS Com-pact Modeling and VLSI Technologyand Circuits technical committees aswell as Membership, Publications,and Educational Activities commit-tees, an EDS Newsletter Editor forRegion 10, and an EDS DistinguishedLecturer.

B. FIRST-TIME ELECTEES:RU HUANG re-ceived her B.E.and M.S. degreesin EE from South-east University,China in 1991 and1994, respectivelyand Ph.D degree inEE from Peking

University, China, in 1997. She joinedPeking University in 1997 and becamea professor in 2002. Currently she isthe Chairman of MicroelectronicsDepartment and Deputy Dean of Insti-tute of Microelectronics, Peking Uni-versity. Her main research interestsinclude nano-scaled CMOS devices,novel memory devices, modeling andsimulation and RF technology.

She holds 11 patents, and hasauthored or co-authored 4 books andmore than 140 academic papers. Shewas the winner of National Youth Sci-ence Award of China, Science and Tech-nology Progress Award of China andother awards. She is a Senior Memberof IEEE, and has been the technical pro-gram co-chair of ICSICT 2004 and tech-nical program committee member ofseveral other international conferences.

RENUKA P. JINDAL(S’77-M’81-SM’85-F’91) received hisPh.D. degree inElectrical Engineer-ing from Universityof Minnesota 1981.Upon graduation,he joined Bell Labo-

ratories at Murray Hill, New Jersey.In fall 2002 Dr. Jindal accepted theposition as Board of Regents EminentScholar Endowed Chair in Telecom-munications at University ofLouisiana, Lafayette. In 1991, he waselected Fellow of the IEEE. From 1990 to


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2000 he served as Editor-in-Chief of theIEEE Transactions on Electron Devices.In December 2000 he received the IEEE3rd Millennium Medal. Currently he isVice-President of Publications for theIEEE Electron Devices Society.

HISAYO S.MOMOSEreceived the M.S.degree from Ocha-nomizu Women’sUniversity, Japan,in 1984 and thePh.D. degree from

Tokyo Institute of Technology, Japan,in 2006.

In 1984, she joined Toshiba Cor-poration, where she was engaged inthe development of static RAMs andlogic LSIs and the research of hot-carrier reliability, oxynitride gate, Nisalicide and ultra-thin gate oxideMOSFETs in the direct-tunnelingregime. Her current interests includeRF characteristics and the relatedissues of CMOS analog devices. Shehas authored or co-authored morethan 100 papers published in techni-cal journals or presented at interna-

tional conferences.She is an IEEE Fellow. She

served as a technical program com-mittee member for IRPS, IEDM,EDSSC and MIXDES. Since 2005,she has also served as an editor ofIEEE Transactions on ElectronDevices and the MicroelectronicsReliability.

Hiroshi IwaiEDS Nominations and

Elections ChairTokyo Institute of Technology

Yokohama, Japan

The Electron Devices Society of theIEEE invites the submission of nom-inations for election to its Adminis-trative Committee (AdCom).Presently, the AdCom meets twiceper year and is composed of 22members. Seven members will beelected this year for a term of threeyears, and a maximum of two con-secutive terms is allowed. In 2007,the election will be held after theAdCom meeting on Sunday, 9December. Electees begin their termin office on 1 January 2008. Foryour information, the nominees donot need to attend the AdComMeeting/Election to run.

Nominees are being sought tofill the slate of candidates. Nomi-

nees may be self-nominated, ormay be nominated by another per-son; in the latter case, the nomineemust have been contacted and haveagreed to serve if elected. Anymember of EDS in good standing iseligible to be nominated. As anoth-er condition for nomination andelection, a nominee is expected toattend the two annual AdCommeetings, if elected in his/her term.In general, the travel and accommo-dation costs to attend these meet-ings are borne by the electedmember.

Please send your nominee’sname, address, and supporting infor-mation to the EDS Executive OfficeSr. Administrator, Laura J. Riello,

IEEE, 445 Hoes Lane, Piscataway, NJ08854, Fax: 732-235-1626, E-Mail:[email protected] in time to bereceived by the deadline of 15 Octo-ber 2007. It is very desirable thatsubmissions include a biographicalsummary in a standard two-page for-mat. The EDS Executive Office canprovide you with an example of theformat. If you have any questionsregarding the nomination require-ments or process, feel free to contactLaura Riello ([email protected]).

Hiroshi IwaiEDS Nominations &

Elections ChairTokyo Institute of Technology

Yokohama, Japan

Call for Nominations - EDS AdComCall for Nominations - EDS AdCom

The Members-at-Large (MAL) of theEDS AdCom are elected for staggeredthree-year terms, with a maximum oftwo consecutive terms. The 1993 Con-stitution and Bylaws changes man-dated increasing the number ofelected MAL from 18 to 22, andrequired that there be at least twomembers from both IEEE Region 8(Europe, Middle East & Africa) andRegion 10 (Asia & Pacific). In 2003,EDS made changes to its Constitutionand Bylaws to require that at leastone elected AdCom member is aGraduate of the Last Decade (GOLDmember). A GOLD member is definedby IEEE as a member who graduatedwith his/her first professional degreewithin the last ten years. It is alsorequired that there are at least 1.5

candidates for each opening. In 2007,seven positions will be filled.

The election procedure begins withthe announcement and Call for Nomi-nations in the EDS Newsletter. Theslate of nominees is developed by theEDS Nominations Committee andincludes the non-Committee andself-nominations received. Nomineesare asked to submit a two-page bio-graphical resume in a standard format.Nominations are closed on 15 October,and the biographical resumes are dis-tributed to the ‘full’ voting members ofAdCom prior to the December AdCommeeting. The election is then held afterthe conclusion of the meeting. Thenominees do not need to attend theAdCom Meeting/Election to run. On theother hand, if elected, are expected to

attend the two AdCom meetings ayear. In general, the travel and accom-modation costs to attend these meet-ings are borne by the elected member.

A continuing flow of new AdCommembers who are interested in work-ing for the improvement of the Societyand its related technical areas is essen-tial for the continued development ofEDS and the field of electron devices.Those interested in the field, the Soci-ety, and its operations are encouragedto attend AdCom meetings, becomeinvolved in Society activities, and con-sider running for election to AdCom.

Hiroshi IwaiEDS Nominations & Elections Chair

Tokyo Institute of TechnologyYokohama, Japan

EDS Administrative Committee

Election Process

EDS Administrative Committee

Election Process

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Four EDS Members were among thewinners of the 2007 IEEE TechnicalField Awards. They are:

Sandip Tiwari ofCornell University.,Ithaca, NY, wonthe 2007 IEEE Cle-do Brunetti Award.His citation states,“For pioneeringcontributions tonano-crystal mem-

ories and to quantum effect devices”Sandip Tiwari, the Charles N. Mel-

lowes Professor of Engineering atCornell University in Ithaca, N.Y., hasmade seminal contributions to thefield of nanotechnology, resulting ingreatly increased storage capacitiesfor compact devices used in mobilecommunications, computing andother applications. Over his career,he has repeatedly broken newground in areas spanning het-erostructures, quantum confinementand nano-devices. Dr. Tiwari’s earlyresearch led to several technologiescurrently in use in compound semi-conductors and other device phe-nomena including electron injectionprocesses in coupled confined sys-tems and frequency limitations ofquantum-wire lasers due to gaincompression. His research withsemiconductors, nonlinearity, cou-pling across scales and adaptationalso helped advance the fields ofelectronics and photonics. An IEEEFellow, he received the 1991 YoungScientist Award from the Institute ofPhysics and the 2003 DistinguishedAlumnus Award from the IndianInstitute of Technology.

Dimitry Grabbeof Worcester Poly-technic Institute,Worcester, MA,won the 2007 IEEEC o m p o n e n t s ,Packaging & Man-ufacturing Tech-nology Award. His

citation states, “For contributions tothe fields of electrical/electronic con-nector technology, and developmentof multi-layer printed wiring boards”

Dimitry Grabbe played an inte-gral part in advancing U.S. spaceexploration. His pioneering workhas produced nearly 500 U.S. andforeign patents covering machinedesign, semiconductor packaging,electronics assembly and optoelec-tronic connector design. His work inprinted circuit board technology forelectronic packaging led to thedevelopment of large, multi-layerprinted circuit boards. This provedcrucial in helping U.S. astronautsgain greater real-time control oftheir space-exploration activities. In1964, Mr. Grabbe founded the MaineResearch Corporation which special-ized in high-end printed circuitboards; the company was dissolvedin 1972. He joined AMP, Inc. in 1973,and helped it become a world leaderin electrical/electronic connectortechnology, test socket technologyand miniature semiconductor pack-ages. Today, Mr. Grabbe is assistingDr. Pryputniewicz, professor ofmechanical engineering andfounding director of the center forholographic studies and laser micro-mechaTronics (CHSLT) at WorcesterPolytechnic Institute (WPI) in Worces-ter, Mass. with research on gyro-scopes and accelorometers. An IEEELife Fellow, Mr. Grabbe has also beenrecognized by AMP (now part of TycoElectronics) with a Lifetime Achieve-ment Award, and by the AmericanSociety of Mechnical Engineers,which chose him for its Leonardo daVinci Award.

James D. Plummerof Stanford Uni-versity, Stanford,CA, won the 2007IEEE Andrew S.Grove Award. Hiscitation states,“For seminal con-tributions to the

modeling, simulation, and physics ofsilicon devices”

For over 30 years, James Plum-mer has made significant contribu-tions in three main areas ofelectronic devices, namely, comput-er-aided design of silicon devicesand fabrication processes, high-volt-age power devices and circuits, andnovel devices for memory and logicapplications. His early work focusedon high-voltage integrated circuits(IC) and high-voltage device struc-tures, including seminal contribu-tions to the insulated gate bipolartransistor (IGBT), a device that hasbecome a key component of the mul-ti-billion-dollar high-power electron-ics industry. Dr. Plummer’s work onsilicon process modeling led to thedevelopment of several generationsof the process modeling programSUPREM, which today is the stan-dard process-modeling tool usedworldwide. Most recently, Dr. Plum-mer has worked on nanoscale silicondevices for logic and memory appli-cations. An IEEE Fellow, he hasreceived numerous recognitions forhis work, including IEEE awards,Semiconductor Research Corpora-tion Awards, “best paper” awards,the Electrochemical Society’s 1991Solid State Science and TechnologyAward and election to the NationalAcademy of Engineering.

Umesh K. Mishraof University ofCalifornia, SantaBarbara, CA, wonthe 2007 IEEEDavid SarnoffAward. His cita-tion states, “Fordevelopment of

gallium nitride electronics”Professor and associate dean of theCollege of Engineering at the Uni-versity of California in Santa Bar-bara, Umesh Mishra is a leader indeveloping compound semiconduc-tor electronics and a driving forcebehind the rapid progress in gallium

EDS MEMBERS NAMED WINNERS OF THE

2007 IEEE TECHNICAL FIELD AWARDS

EDS MEMBERS NAMED WINNERS OF THE

2007 IEEE TECHNICAL FIELD AWARDS


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nitride (GaN)-based microwavedevices and circuits. He began hiscareer researching gallium arsenideand indium phosphide (InP) highelectron mobility transistors(HEMTs) for low noise amplifiers,which became the leading receivertechnology for many space-basedplatforms. Dr. Mishra’s researchgroup was the first to demonstratethat the unique wide bandgap and

electron transport properties of galli-um nitride could be harnessed tocreate devices with an unprecedent-ed combination of high-frequencyperformance and microwave poweroutput. Since then, Dr. Mishra hascontinued to make key advances inboth the fundamental understandingand the technological exploitation ofGaN/A1GaN HEMT devices. An IEEEFellow, Dr. Mishra has a bachelor’s

from the Indian Institute of Technol-ogy in Kanpur, India, a master’sfrom Lehigh University in Bethle-hem, Pa., and a doctorate from Cor-nell University in Ithaca, N.Y., all inelectrical engineering.

Alfred U. Mac RaeEDS Awards Vice-President

Mac Rae TechnologiesBerkeley Heights, NJ, USA

In 2000, the IEEE approved the estab-lishment of the Electron DevicesSociety Graduate Student FellowshipProgram. The Program is designed topromote, recognize, and supportgraduate level study and researchwithin the Electron Devices Society’sFields of Interest: which include: Allaspects of the engineering, physics,theory, experiment and simulation ofelectron and ion devices involvinginsulators, metals, organic materials,plasmas, semiconductors, quantum-effect materials, vacuum, and emerg-ing materials. Specific applications ofthese devices include bioelectronics,biomedical, computation, communi-cations, displays, electro and micromechanics, imaging, micro actuators,optical, photovoltaics, power, sen-sors and signal processing. In defer-ence to the increasing globalizationof our Society, at least one fellowshipis to be awarded to students in eachof three geographical regions: Ameri-cas, Europe/Mid-East/Africa, and Asia& Pacific.

In July 2006, EDS announced thewinners of the 2006 Fellowships. Thefour winners were: Ravi Todi of theUniversity of Central Florida, Orlando,FL, USA; Rimoon Abaiby, Universityof Newcastle, Newcastle Upon Tyne,United Kingdom; Wen Wu, HongKong University of Science & Technol-ogy, Hong Kong; and Chi Yung Ng,Nanyang Technological University,Singapore. The winners are pursuingdistinctly different research topics fortheir doctoral degrees. The followingare brief progress reports written bythe award winners.

I received myPh.D. degree fromthe School ofElectrical Engi-neering and Com-puter Science atUniversity of Cen-tral Florida in May2007. My disserta-tion was in thearea of gate stack

and channel engineering with specif-ic focus on binary metal alloys andgermanium channel devices. SinceMay 2007, I have been working asAdvisory Engineer/Scientist at IBM’sMicroelectronics Division, EastFishkill, New York.

At present, I amlooking into thepotential of ad-vanced MOS-FETs with strainedSi channels for dif-ferent applications.Several studies arecurrently in prepa-ration (1) tempera-ture dependant

degradation in SiON gate dielectricson strained Si channels with SiGethin/thick strain relaxed buffers (2)assessing the potential of advancedstrained Si MOSFETs in mixed sig-nal applications (3) insight into theeffect of surface morphology andprocessing conditions on the qualityof SiON gate dielectrics on strainedSOI. These studies promise to bringto light several reliability issueswhich were never considered. My

Ph.D. thesis should be complete bySeptember 2007.

Her research atHKUST covers abroad area in sili-con devices de-sign and modeling,ranging from de-sign optimizationof traditional de-vices to compactmodel develop-ment for non-tradi-

tional emerging devices for RF/Microwave applications. Recently, shehas been involved in the internationaljoint NEDO project to develop a mod-eling framework for next-generationMOS devices. She derived a physicalmodel to account for the parasiticeffects on the characteristics of non-pla-nar multi-gate devices. The results havebeen published in the 2007 issues ofIEEE Transactions on Electron Devicesand Solid-State Electronics. In addition,she has authored two invited confer-ence papers on compact modeling.

He joined NanyangTechnological Uni-versity, Singapore,to pursue a Ph.D.degree in Micro-electronics. HisPh.D. thesis title is“Synthesis, char-acterizations anddevice applicationsof silicon nano-

crystal”, under the guidance ofAssoc. Prof. Tupei Chen. He has

Status Report from the 2006 Graduate

Student Fellowship Winners

Status Report from the 2006 Graduate

Student Fellowship Winners

RAVI TODI

RIMOON ABAIBY

WEN WU

CHI YUNG NG

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authored or coauthored 27 inter-national peer-reviewed journalpapers during the 4 years of Ph.D.s tudies . H is research in terestincludes physical properties anddevice appl icat ions based on

semiconductor nanostructure,nonvolatile memory devices andnanoscale CMOS devices. His the-s is has been submit ted forrev iew. He can be reached [email protected].

Agis A. Iliadis2007 EDS Student Fellowships Chair

Electrical and Computer Engr. Dept.University of MarylandCollege Park, MD, USA

IEEE Nanotechnology Council AwardsCommittee (Chaired by Prof. Chennu-pati Jagadish) announced its 2007award winners for IEEE Nanotechnol-ogy Pioneer Award, IEEE NTC Distin-guished Service Award and IEEE NTCEarly Career Award. These awardswill be presented at IEEE NANO 2007in Hong Kong in August 2007.

Nanotechnology Pioneer AwardThe NTC Pioneer Award in nanotech-nology is to recognize individualswho by virtue of initiating new areasof research, development or engi-neering have had a significant impacton the field of nanotechnology. Thewinners of the 2007 award are:

• Professor Pallab Bhattacharya (Uni-versity of Michigan) for contributionsto “Quantum Dot OptoelectronicDevices”

• Professor Mark Reed (Yale Universi-ty) for contributions to “Nano andMolecular Electronics”

Distinguished Service AwardThe purpose of the DistinguishedService Award is to recognize an indi-vidual who has performed outstand-ing service for the benefit andadvancement of the IEEE Nanotech-nology Council.• Toshio Fukuda (Nagoya University)

is the winner for his outstanding ser-vice to the Council as its FoundingPresident and in many other roles

Nanotechnology Early Career AwardThe purpose of the Nanotechnolo-gy Early Career Award is to recog-nize individuals who have madecontributions with major impacton the field of nanotechnology.The winner of the 2007 award is• Professor Chongwu Zhou (Universi-

ty of Southern California) for hiscontributions to “Nanowire andNanotube Electronics”

Professor Chennupati JagadishIEEE NTC Awards Committee Chair

Research School of Physical Sciencesand Engineering

The Australian National UniversityCanberra, ACT 0200, Australia

IEEE NANOTECHNOLOGY COUNCIL

ANNOUNCES 2007 AWARD WINNERS

IEEE NANOTECHNOLOGY COUNCIL

ANNOUNCES 2007 AWARD WINNERS

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The IEEE Nanotechnology Council (NTC) is accepting nominations for the three NTC awards to be presented at IEEENANO 2008. All nominees need to be IEEE members. Please send nominations (electronic and one hard copy) withsupporting material to: Prof. Chennupati Jagadish, Chair, IEEE NTC Awards Committee, Research School of PhysicalSciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia. Ph: +61-2-6125-0363,Fax: +61-2-6125-0511, Email: [email protected]. All nomination material including reference letters should reachthe NTC awards committee by October 15, 2007.

1. Pioneer Award In NanotechnologyDescription: The NTC Pioneer Award in nanotechnology is to recognize individuals who by virtue of initiating newareas of research, development or engineering have had a significant impact on the field of nanotechnology. Theaward is intended for people who are in the mid or late portions of their careers, i.e., at least 10 years beyond his orher highest earned academic degree.

Eligibility: Any current member of the IEEE working in the Nanotechnology who is at least 10 years beyond his orher highest earned academic degree.

Employment of Candidates: The Council may grant two awards in this category, if the Awards Committee deter-mines that the nominations are worthy. There may be one award for academics (persons employed by colleges oruniversities) and one for persons employed by industry or government organizations.

Prize Items: The award consists of $1000 ($500 each if two awards are made) honorarium and a commemorativeplaque.

Selection/Basis for Judging: Factors that will be considered are: Distinction in long-term technical achievement,leadership, innovation, breadth, and impact on nanotechnology and engineering.

2. Early Career Award In NanotechnologyDescription: The Nano Technology Council to establish an Early Career Award to recognize individuals who havemade contributions with major impact on the field of nanotechnology.

Eligibility: Any current member of the IEEE who is in the early stage of his or her career in the nanotechnology field,i.e., less than 7 years after being granted his or her highest earned academic degree.

Employment of Candidates: The Society may grant two awards in this category, if the Awards Committee deter-mines that the nominations are worthy. There may be one award for academics (persons employed by colleges oruniversities) and one for persons employed by industry or government organizations.

Prize Items: The award consists of $1000 ($500 each if two awards are made) honorarium and a commemorativeplaque.

Selection/Basis for Judging: Factors that will be considered are: Distinction in technical innovation and achieve-ment, and impact on nanotechnology and engineering.

3. NTC Distinguished Service AwardDescription: Nanotechnology Council to establish a Distinguished Service Award to recognize an individual whohas performed outstanding service for the benefit and advancement of Nanotechnology Council.

Eligibility: Any current or former member of IEEE Nanotechnology Council with outstanding service in one or moreof the following areas: conferences and meetings, publications, editors, administrative committee, chapter leader-ship, or other distinguished services and activities for the Nanotechnology Council.

Prize Items: The award consists of $1,000 honorarium and a commemorative plaque. Selection/Basis for Judging:Factors that will be considered are: Impact of service and contributions to the Council, leadership, innovation, activi-ty, duration, breadth of participation and cooperation.

CALL FOR NOMINATIONS

IEEE Nanotechnology Council (NTC) Awards

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Parhat AhmetPietro AndreaniCiaran Conneely*Paul CrumpGana DashGrzegorz DeptuchDonald DisneyTomas Gonzalez*Jyh-Chyurn GuoAllen HansonTony HeinzAlbert HenningLeonardo Hillkirk*Digh Hisamoto

Lalit KumarPo-Tsun Liu*Eduard Llobet*Joao MartinoYoshinori MatsubaraGaudenzio MeneghessoJoe Mcalexander*Jian Mi*Matthew NowakChul Park Lindsay QuarrieVesna RojeJames Sewell*Sivalingham Sivananthan

Karl StraussLisa SuMani SundaramKazuo TsutsuiKlaus Johannes WeberRichard WilliamsGilson Wirth*Ying WuJi-Woon YangZhiping YinFranco Zappa*Jun-Fei Zheng*Babak ZiaieChristian Zorman*

* = Individual designated EDS as nominating entity

If you have been in professional practice for 10 years, you may be eligible for Senior Membership, the highest grade ofmembership for which an individual can apply. New senior members receive a wood and bronze plaque and a creditcertificate for up to US $25 for a new IEEE society membership. Upon request, a letter will be sent to employers, recog-nizing this new status.

For more information on senior member status, visit http:// www.ieee.org/web/membership/senior-members/sta-tus.html. To apply for senior member status, fill out an application at http://www.ieee.org/ organizations/rab/md/smelev.htm.

Congratulations to the EDS Members

Recently Elected to IEEE

Senior Member Grade!

Congratulations to the EDS Members

Recently Elected to IEEE

Senior Member Grade!

The deadline for EDS chapters to request a sub-sidy for 2008 is 1 September 2007. For 2007, theEDS AdCom awarded funding to 59 chapters,with most amounts primarily ranging fromUS$250 to US$1,500. Recently, Chapter Chairswere sent an e-mail notifying them of the cur-rent funding cycle and providing them with alist of guidelines. In general, activities which areconsidered fundable include, but are not limitedto, membership promotion travel allowances forinvited speakers to chapter events, and supportfor student activities at local institutions. Sub-sidy requests should be sent via e-mail or fax tothe EDS Sr. Administrator, Laura J. Riello, IEEE,

EDS Executive Office, 445 Hoes Lane, Piscat-away, NJ 08854, [email protected] or fax 732-235-1626. Prior to the submission of the subsidyrequest, the Chapter Chair must submit a chap-ter activity report to its respective SRC Chairand Laura Riello of the EDS Executive Office byJuly 1. This report should include a generalsummary of chapter activities (one to twopages) for the prior July 1st - June 30th period.You must also attach a copy of the activityreport to your chapter subsidy request. Finaldecisions concerning subsidies will be made bythe EDS SRC Chairs/Vice Chairs in December.Subsidy checks will be issued by late January.

EDS CHAPTER SUBSIDIES

FOR 2008

EDS CHAPTER SUBSIDIES

FOR 2008

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The ED Calcutta Chapter, which startedits activities three years ago, wasproud to organize a mini-colloquiumjointly with the ED North Jersey Chap-ter and the IEEE Calcutta Section suc-cessfully. The theme of the mini-colloquium was MICROELECTRONICSand VLSI. The venue of the mini-collo-quium was chosen in the temple city

of Orrisa Bhubaneswara. Recently,Bhubaneswar has grown into a mod-ern capital city with air and rail connec-tions to different parts of India such asMumbai and New Delhi. The city hasmany engineering colleges in andaround it and also several IT softwareindustries, significantly contributing tothe Indian economy. The choice of thevenue was very appropriate and alsofound to be fruitful.

The colloquium was arranged inThe New Marion Bhubaneswar onJanuary 3, 2007 and seven IEEEDistinguished Lecturers were invit-ed from different countries. Thespeakers, very famous and wellestablished in the area of Micro-electronics and VLSI, were Prof. CorClaeys (Belgium), Prof. Durga Misra(USA), Prof. L. Pfitzner (Germany),Prof. M. Bushnell (USA), Prof. H.Iwai, (Japan), Prof. R. Jindal (USA)and Prof. R.V. Rao (India). Unfortu-

nately, two of the speakers, Prof.Jindal and Prof. Pfitzner, could notparticipate due to travel scheduledisruptions.

The presentations of the otherspeakers were excellent and verymuch appreciated by the participants.The one hundred participants thatregistered for the colloquium, weremainly faculty and students fromengineering institutions and practic-ing engineers from industries.

The event was primarily spon-sored by IEEE EDS (USA), throughthe IEEE ED Calcutta Chapter, alongwith the ED New Jersey Chapter andthe IEEE Calcutta Section. Mr. ParthaSarkar, ED Calcutta Chapter Secretaryand HOD, Electronics EngineeringDept. of Orissa Engineering College,Bhubaneswar, took great initiative ingetting sponsorships from variousengineering colleges in Bhubaneswarand publicizing the event on a bigscale, drawing large numbers of par-ticipants for the colloquium. OrissaEngineering College emerged as amajor sponsor of the event providinggreat help with the logistics andinfrastructure, making the colloquiuma grand success.

The major outcome of the event isthat many faculty members and stu-dents showed their interests in join-ing IEEE and EDS. Approximately,thirty new members joined the orga-nization. Also, they insisted on orga-nizing similar EDS events in thefuture for Orissa. The organizing sec-retary is taking an effort to form anew EDS chapter at Bhubaneswarvery soon

Finally, the EDS mini-colloquiumin Bhubaneswar has generated astrong motivation for spreading theobjective of the IEEE EDS amongprospective engineering colleges.

Chandan K. SarkarED Calcutta Chapter Chair

Durga MisraED/CAS Chapter Chair and

EDS SRC-NAE Chair


EDS Distinguished Lecturers

Visit Bhubaneswar, India

EDS Distinguished Lecturers

Visit Bhubaneswar, India

Inaugural ceremony of IEEE EDS Mini-Colloquium on Microelectronics and VLSI, held jointlyon 3 January 2007, organized by the ED Calcutta and ED/CAS North Jersey Chapter. From left

to right: Prof. D.P. Joshi, Prof. P. Sarkar, Prof. D. Misra, Mr. K.K. Patnaik, Prof. C.K. Sarkar,Prof. S.K. Sanyal

Prof. Cor Claeys (EDS President-Elect),inaugurating the mini-colloquium by lighting the

lamps, with Prof. D. Misra, ED North JerseyChapter Chair and Prof. C.K. Sarkar, ED Calcutta

Chapter Chair

Participants, organizers and EDS Distinguished Lecturers attending the IEEE EDS Mini-Colloquium at Bhubaneswar

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In Memory of Prof. Gerold Neudeck,

Purdue University

In Memory of Prof. Gerold Neudeck,

Purdue University

Dr. Gerold W. Neudeck, a pioneer in3-D silicon device research, well-known textbook author, and abeloved teacher at Purdue Universityfor the past 40 years, lost a coura-geous battle with cancer and passedaway, April 25, 2007. Dr. Neudeckwas an IEEE Fellow since 1990, a for-mer editor of Transaction on ElectronDevices, recipient of the 1992 NyquistAward, and recipient of the 2001 SRCAristotle Award.

Gerry was born Sept. 25, 1936 inBeach, North Dakota. He attended theUniversity of North Dakota, receivinga bachelor's degree in 1959 and mas-ter's degree in 1960. He was assistantprofessor of electrical engineeringthere from 1960 to 1964. He was aninstructor and research assistant atPurdue University between 1964 and1968, while completing his Ph.D., andwas a professor of Electrical Engi-neering at Purdue from that timeuntil his retirement on December 31,2006. Dr. Neudeck served as Purdue’sAssociate Dean of Engineeringbetween 1988 and 1991.

Gerry is survived by his wife of 45years, Mariellen, and their two sons,Phil of Omsted Falls, Ohio and Alexof Windsor, Colorado. Both of hissons also graduated with Ph.D.degrees in Electrical Engineeringfrom Purdue University and are IEEEEDS members. He is also survived byhis mother, Helen Anderson ofSpearfish, SD and two sisters, JoyceFreese of Spearfish and Lyla Ander-son of Bellevue, WA, as well as fourgranddaughters.

Dr. Neudeck was the author or co-author of 9 widely used solid-statedevices and microelectronic circuitdesign textbooks and 271 refereedprofessional publications. He held 15patents for various MOSFET and BJTdevices. His research focused on nov-el silicon device structures, physics,and fabrication technologies. Thisincluded amorphous silicon TFT’s,

polysilicon emitter BJT’s, and espe-cially selective (SEG) silicon epitaxiallateral overgrowth (ELO) for the fabri-cation of fully-depleted, double-gatedSOI MOSFET’s, micromechanicalsensors, and multiple stacked layersof SOI devices for 3-D integration.

His teaching awards included thePurdue University Book of GreatTeachers in 1999; the HoneywellTeaching Award in 1995; the D.D.Ewing Award in 1973, the A.A. PotterAward in 1973 and the Dow Out-standing Young Faculty Award, Illi-nois-Indiana section of the AmericanSociety for Engineering Education.

Dr. Neudeck was a member ofseveral honorary societies, includingSigma Xi, Sigma Tau, Eta Kappa Nuand Sigma Pi Sigma. He also was aboard member for NICHES (NorthernIndiana Citizens Helping EcosystemsSurvive), was Parlor Club presidentfrom 2006 to 2007, and served on theGreater Lafayette Public Transporta-tion Board between 1979 and 1980.

Gerry was given a lifetime honorin 1999 by being chosen by Purduestudents for inclusion in The Book ofGreat Teachers, who have devoted

their lives to excellence in teachingand scholarship. The success of ateacher is probably best measured bythe success of his students. ProfessorNeudeck graduated 26 MS and 28Ph.D. students who have been verysuccessful in both industry and acad-emia. Here are some comments fromhis former students:

“Dr. Neudeck has been a lifelongrole model for me, shaping both myteaching style and research approach.He is my example for how to respectand genuinely care for both the pro-fessional and personal lives of mystudents and colleagues.”

“Gerry taught me how to effec-tively and successfully manage allaspects of a complicated program.His continuous support, encourage-ment, and coaching gave me tremen-dous confidence when I started as anengineer at AMD.”

“If you want your organization tobe successful, you must foster ahealthy emotional environment, youmust stress the fundamentals, andyou must be committed to the suc-cess of your colleagues. Dr. Neudecktaught these lessons by example…hewas committed to my success aboveand beyond his own.”

“I believe the main reason thatProf. Neudeck was a successfulresearcher and excellent mentor washis ability to get his students to workas a team. He helped studentsmature academically and profession-ally by getting them to take owner-ship of their projects”

“After eight years in several differ-ent engineering groups, I still think ofProfessor Neudeck as the model ofwhat I’d like to become.”

He will be greatly missed by theelectron devices and IEEE community.

Stephen A. ParkeEDS Treasurer

Tennessee Tech UniversityCookeville, TN, USA

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The EDS Distinguished Lecturer Program exists for the purpose of providing EDS Chapters with a list of quality lecturerswho can potentially give talks at local chapter meetings. To arrange for a lecture, the EDS chapters should contact theDistinguished Lecturer directly. A general guideline for the visit, but not the absolute rule, is that the lecturer should beable to include the meeting site with an already planned travel schedule at a small incremental cost to the travel plan.Alternatively, a prior coincident travel plan would not be required if the lecturer is already located within an approximatefifty mile radius of a meeting site. Although the concept of the program is to have the lecturers minimize travel costs bycombining their visits with planned business trips, EDS will help subsidize lecturer travel in cases where few/no lecturerswill be visiting an area and/or a chapter cannot pay for all the expenses for a lecturer trip. For a full listing of EDS Distin-guished Lecturers and travel plans please contact Laura Riello of the EDS Executive Office (Tel: 1-732-562-3927, Fax: 1-732-235-1626, E-Mail: [email protected]).

ANDREAS ANDREOUTel: N/AE-Mail: [email protected]: N/A- Single photon, and standing wave

photodetectors in bulk and SOI CMOStechnologies.

- Devices for mixed analog/digital cir-cuits 3D SOI-CMOS: challenges andopportunities

- Hybrid CMOS/living cells structures:Where are we now and where are weheading to?

- Integration and packaging challengesin hybrid silicon/silicone (PDMS)microsystems for the life sciences.

VIJAY K. ARORATel: 1 570 408 4813/4211E-Mail: [email protected] Fax:1 570 408 7881- Quantum Engineering of Nanoelec-

tronic Devices - Integrated-Circuit Engineering- High-Field Effects in Quantum-Con-

fined Systems- Hot Electrons: A Myth or Realty?- The Role of Physical and Behavioral

Sciences in the Development ofStrategic Technologies in Nano/Micro-Systems

- Outcome-Based Education, Training, andLeadership for Competitive Excellence

SUPRIYO BANDYOPADHYAYTel: 1 804 827 6275E-Mail: [email protected] Fax: 1 804828 4269- Quantum ComputingCarrier transport

in nanostructures- Spintronics- Nanoelectronics

RONA E. BELFORDTel: 1 843 815 7689E-Mail: [email protected]: 1 843 815 7687

HERBERT S. BENNETTTel: 1 301 975 2079E-Mail: [email protected]: 1 301 975 6021 - Carrier Transport and Bandgap Narrow-

ing in Heavily DopedCompound Semi-conductors

- Comparison of Theory & Exp- Consensus-Based Planning for Com-

pound Semiconductor Technologies(Technology Roadmaps)

- RF and Analog Mixed-Signal Tech-nologies for Wireless Communica-tions

- The United States Measurement Sys-tem: Technological Innovation

- Imaging as a Biomarker: Change Mea-surement in Therapy

MARC CAHAYTel: 1 513 556 7326E-Mail: [email protected]: 1 513 556 7326- Potential Applications of Spintronics- Rare-earth monosulfides and their

potential applications

JOHN D. CRESSLERTel: 1 404 894 5161E-Mail: [email protected]: 1 404 894 4641- Silicon-Germanium Microelectronics

for 21st Century CommunicationsSystems

- Using SiGe Technology for ExtremeEnvironment Electronics

JAMAL DEENTel: 1 905 525 9140 ext. 27137

E-Mail: [email protected]: 1 905 523 4407- MOS RF Noise Modeling and Design

of Low Noise RFICs- RF Performance MOSFETs and RFICs -

Effects of Electrical Stress - Advanced Photodetectors for Optical-

Telecommunications

SUPRATIK GUHATel: 1 914 945 3835E-Mail: [email protected]: N/A- future materials for silicon mosfet

technologies, high-k gate dielectrics,semiconductor nanowires.

STEVEN J. HILLENIUSTel: 1 919 941 9418E-Mail: [email protected] Fax: N/A- Not One But a Billion ULSI Technolo-

gy Manufacturing

AGIS A. ILIADIS Tel: 1 301 405 3651E-Mail: [email protected]: 1 301 314 9281- Self-Assembled Nanostructures- Wide Band-Gap Semiconductor Tech-

nology- High Power Microwave Effects on

Electronic Devices and Circuits- Optoelectronic Devices

EDS DISTINGUISHED LECTURER PROGRAM

- LECTURERS RESIDING IN

EASTERN USA & CANADA

EDS DISTINGUISHED LECTURER PROGRAM

- LECTURERS RESIDING IN

EASTERN USA & CANADA

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SUBRAMANIAN S. IYERTel: 1 845 894 1439E-Mail: [email protected]: 1 845 491 2996- Beyond Scaling - extracting perfor-

mance from Silicon Technology- Towards the autonomic chip - turning

reliability problems on their head andsteps along the way

- Its the memory

LUCIAN A. KASPRZAK Tel: 1 302 631 7835E-Mail: [email protected] Fax: 1 302 631 9561- Building in Reliability- Electron Devices in Astronomy- What’s Your Cosmology?- ELSI Reliability - Digital Radiography

KEVIN T. KORNEGAYTel: 1 404 385 6010E-Mail: [email protected]: 1 404 385 4120- RF Integrated Circuit Design - High Performance Mixed Signal IC

Design for Optical Comm- MMWIC’s for Broadband Communica-

tion Systems

JOY LASKARTel: 1 404 894 5268E-Mail: [email protected]: 1 404 894 0222- The Development of Multi-Gigabit

Radio Technology for TerabitWirelessPersonal Area Networks

MARK E. LAWTel: 1 352 392 0913E-Mail: [email protected] Fax: 1 352392 8671- Moore’s Law and Materials Science:

Scaling to the Atomic Limit

GUIFANG LITel: 1 407 823 6811E-Mail: [email protected] Fax: N/A- Two-Section Gain-Coupled DFB

Lasers and Their Applications- DSP-Based Coherent Optical Commu-

nications

JUIN J. LIOU Tel: 1 407 823 5339E-Mail: [email protected]: 1 407 823 5835- RF/Microwave Semiconductor

Devices: Evolution, Current Status,and Future Trend

- Modeling, Characterization, andDesign of Electrostatic Discharge(ESD) Protection Structures forMicrochips

- Empirical Modeling of Reliability of RFCMOS Transistors

GERRY LUCOVSKY Tel: 1 919 515 3301E-Mail: [email protected]: 1 919 859 3191- Band Edge Electronic Structure in

High-k Gate Dielectrics- Band Edge Defects in High-k Gate

Dielectrics and at Their InternalDevice Structure Interfaces

- Intermediate Phases in Non-crys-talline Solids: Appls. to GateDielectrics and Optical Memory Read-Write Material

GARY MAY Tel: 1 404 894 2902E-Mail: [email protected]: 1 404 894 4641- Intelligent Semiconductor Manufac-

turing

JOHN MELNGAILISTel: 1 301 405 4916E-Mail: [email protected]: 1 301 314 9437- Ion beam and electron beam direct

nanaofabrication- Overview of top down micro/nano

fabrication

DURGAMADHAB MISRATel: 1 973 596 5739E-Mail: [email protected]: 1 973 596 5680- High-K Dielectrics for Nanoscale

CMOS Device

LAURENCE W. NAGELTel: 1 973 895 4375E-Mail: [email protected]: 1 973 895 3374

KWOK K. NGTel: 1 610 712 5479E-Mail: [email protected]: 1 610 712 4081- A Survey of Semiconductor Devices

TAK H. NING Tel: 1 914 945 2579E-Mail: [email protected]: 1 914 945 3623- SOI BiCMOS - an emerging technolo-

gy platform for mixed-signal designs- Silicon technology — future trends

from a system application perspective

TOSHI NISHIDATel: 1 352 392 6774E-Mail: [email protected]: 1 352 392 8671- Noise in MEMS Transducers- Strain Effects in Advanced CMOS and

MEMS Piezoresistive Sensors- Energy Harvesting for Self-powered

Sensors: Technology and Prospects

FRED E. SCHUBERTTel: 1 518 276 8775E-Mail: [email protected]: 1 518 276 8042- Light-emitting diodes- The solid-state lighting revolution- Wide-bandgap semiconductors for

optoelectronic applications- Smart lighting

DAVID G. SEILERTel: 1 301 975 2074E-Mail: [email protected]: 1 301 975 6021- Innovation and Breakthroughs: A Crit-

ical Path for Success- Frontiers of Metrology for Nanoelec-

tronics

MICHAEL S. SHUR Tel: 1 518 276 2201E-Mail: [email protected]: 1 518 276 2990- Terahertz Plasma Wave Electronics- Solid State Lighting- Nitride Based Insulated Gate Field

Effect Transistors- Physics of GaN Based Devices

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The Electron Devices Society (EDS)Santa Clara Valley (SCV) Chapter, incollaboration with the Santa Clara Uni-versity (SCU) Chapter, hosted a mini-colloquium on Friday, February 23,2007, at the SCU Campus, Santa Clara,CA. The objective of this mini-colloqui-um was to provide technical perspec-tive on “Next Generation DeviceTechnologies” by EDS Distinguish Lec-turers (DLs) and student researchersworking in the field. There were sixtalks and three student posters with a

total attendance of about 120.The event started with a welcome

address by Prof. Cary Yang of SCU,followed by three talks in the morningsession. The first presentation, “StrainEngineering and Device Performance:Benefit or Compromise?” was offeredby Prof. Cor Claeys, IMEC. He startedwith an overview of presently knowndifferent strain engineering techniquesand presented a global approachbased on the strained Si on strain-relaxed SiGe buffer layers and the use

of process-induced stressors like anembedded SiGe layer and a contactetch stop layer (CESL) in a FinFET tech-nology. He also, highlighted the majoradvantages and disadvantages of dif-ferent strain-engineering approachesand discussed the use of Ge and GeOIas high-mobility substrates. The sec-ond speaker, Prof. Juin Liou, of UCF,presented “Robust Electrostatic Dis-charge (ESD) Protection in CMOSTechnology.” He provided anoverview of the ESD sources, models,and protection schemes with exam-ples of recent development on robustESD solutions for protecting data com-munication transceivers and gas-sen-sor microchips. Prof. Liou thendiscussed the results of technologyCAD-based ESD modeling. The thirdtalk was by Dr. Tejas Krishnamohan ofIntel, on “High Mobility Materials andNovel Device Structures for High Per-formance Nanoscale MOSFETs.” Hediscussed the limitations of presentlyused techniques to scale MOSFETs tosub-20 nm regime and showed highermobility materials like Ge, strained-SiGe, strained-Ge, and III-V materialslike GaAs, InAs, InSb, and InGaAstogether with innovative device struc-tures as alternatives for future devices.Dr. Krishnamohan showed that Gecould be suitable for p-MOS whilehigh electron mobility III-V materialscould be suitable for n-MOS. However,


RAJENDRA SINGHTel: 1 864 656 0919E-Mail: [email protected]: 1 864 656 5910- Microsystems and Nanosystems:

Manufacturing Challenges and Oppor-tunities

- Nanotechnology: hype and Reality

USHA VARSHNEYTel: 1 703 292 8339E-Mail: [email protected]: 1 703 292 9147- Research and Education Opportuni-

ties in the Electrical Communicationsand Cyber Systems at the NationalScience Foundation

STEVEN H. VOLDMANTel: 1 802 769 8368E-Mail: [email protected]: 1 802 769 9659- Electrostatic discharge (ESD) in the

Nanoelectronic Era- The ESD Technology Roadmap- Electrostatic discharge (ESD) in RF

Technologies- CMOS Latchup in CMOS and BiCMOS

SiGe Technology

SIGURD WAGNERTel: 1 609 258 4631E-Mail: [email protected]: 1 609 258 6279- Large-Area Electronics- Electronic Skin, Electrotextiles Flexi-

ble, Deformable, and Elastic Electron-ic Surfaces

J.S. (PETER) YUANTel: 1 407 823 5719E-Mail: [email protected]: 1 407 823 5835- Nano-scaled CMOS Device and Circuit

Reliability

Report on the IEEE EDS Mini-Colloquium,

Santa Clara, CA

Report on the IEEE EDS Mini-Colloquium,

Santa Clara, CA

EDS Distinguished Lecturers and organizers of the Santa Clara University EDS Mini-Colloquium. Fromleft to right: Prof. C. Claeys, Dr. T. Krishnamohan, Prof. J.J. Liou, Dr. N.D. Arora, Dr. P. Jansen, Dr. S.

Saha, Prof. C.Y. Yang, Prof. P.K. Yu, and Prof. S. Krishnan

14eds03.qxd 6/22/07 11:02 AM Page 22

for both Ge and III-V devices the prob-lems of leakage need to be solved andnovel heterostructures will be neededto exploit the promise advantages ofGe and III-V based devices.

During lunch hour, SCU studentresearchers, working under the supervi-sion of Prof. Cary Yang and Prof. ShobaKrishnan presented three posters. Thefirst poster, “Carbon Nanofiber Inter-connects: Contact Annealing and High-Current Breakdown” by Q.X. Ngo, H.Kitsuki, M. Suzuki, A. Cassell, C. Moy-lan, J. Li, K. Gleason, and C.Y. Yang; thesecond, “Characterizing Neuronal Net-works Using Carbon Nanotube Micro-electrode Array,” by A. Seger, E. deAsis, W. Won, L. Wang, K. Kagoo, J.Hieb, M.S. Isaacson, and C.Y. Yang; andthe third poster, “The Carbon NanotubeEnhanced Tunneling Diode Via In SituHighly Controlled Electric Field InducedSurface Functionalization,” by A.J.Austin, C. Estonilo, Q.X. Ngo, C.V.Nguyen, and S. Krishnan.

The afternoon session started withthe presentation on “RCL Characteri-zation and Modeling of X ArchitectureDiagonal Wires for VLSI Design,” byDr. Narain Arora of Cadence. Heshowed that for sub-100 nm copperCMOS processes, X Architecture diag-

onal wire interconnects offer fasterand smaller IC Chips compared to thesame design in Manhattan routingand he also discussed the results ofRCL characterization, modeling,SEM/FIB analysis of these diagonallines for VLSI design. The second talk

by Prof. Paul Yu of UC San Diego, on“Recent Advances in PhotonicDevices for RF/Wireless Communica-tion Applications.” reviewed theadvances in the state-of-the-art pho-tonics devices for analog links such aslaser diodes, high power lasers, exter-nal modulators, semiconductor ampli-fiers, erbium doped fiber amplifier,

and photodetectors and compared thedirect modulation scheme with that ofexternal modulation. Prof. Yu also dis-cussed the research frontiers in exter-nal optical modulators. The finalpresentation was offered by Prof. Tsu-Jae King Liu, UC Berkeley, on “FinFETTechnology for Nanoscale CMOS Dig-ital Integrated Circuits.” Prof. Liu pro-vided details of FinFET technologyand discussed how it can be used toimprove the performance, standbypower consumption, and variability innanoscale-CMOS digital ICs.

The mini-colloquium was orga-nized by Samar Saha, EDS SCVChapter Vice-Chair, Prof. ShobaKrishnan, Faculty Advisor of the IEEESCU Chapter, and SCU StudentChapter President, Alexander Austin,with Prof. Cary Yang as the advisorand Ms. Amber Delacruz of EEDepartment, SCU, as the event assis-tant. All the talks were interactivewith active participation from theattendees.

Samar SahaED Santa Clara Valley Chapter Vice-

ChairDSM Solutions, Inc.Los Gatos, CA, USA


Professor Tsu-Jae King Liu speaking on “FinFETTechnology for Nanoscale CMOS Digital

Integrated Circuits”

The EDS Chapter of the Year Award is given each year based on the quantity and quality of the activities andprograms implemented by the chapters during the prior July 1st – June 30th period. Nominations for the awardcan only be made by Chapter Partners, SRC Chairs/Vice-Chairs, or self-nominated by Chapter Chairs.

The winning chapter will receive a certificate and check for $1,000 to be presented at the International Elec-tron Devices Meeting (IEDM).

As of the 2007 Award, the EDS AdCom approved a ruling whereby a chapter that wins the Chapter of the YearAward cannot win again until after a lapse of 3 years.

The schedule for the award processis as follows:

ACTION DATECall for Nominations E-Mailed toChapter Chairs, Chapter Partners, SRCChairs & SRC Vice-Chairs

June

Deadline for Nominations 9/15

Regions/Chapters Committee SelectsWinner Early-October

Award given to ChapterRepresentative at IEDM

First week of December

Call for Nominations for the

EDS Chapter of the Year Award

Call for Nominations for the

EDS Chapter of the Year Award

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Success! You have completed yourundergraduate degree in engineeringafter years of study – years of essays,exams, labs, and assessments – yearsof erratic sleep patterns and far toomuch caffeine! The inevitable ques-tion remains…now what? Followinggraduation, life changes quickly andyou will soon find yourself in a newenvironment. Whatever path youchoose to take, be it industry or fur-ther postgraduate study, know thatthe IEEE via GOLD (Graduates Of theLast Decade), and EDS are there toassist you in your transition. TheGOLD program supports young IEEEmembers (if you are an IEEE Memberwho graduated with your first profes-sional degree within the last ten years,you are automatically part of IEEEGOLD!), GOLD affinity groups, and theGOLD-Society Interaction Project.Both the IEEE and GOLD already offera comprehensive array of productsand services that can assist youngIEEE members (see below); however,EDS would like to do more for itsyoung members – more for new grad-uates like you. EDS needs to knowwhat the Society can do (or is alreadydoing!) to provide you with value foryour continued membership and tohelp you grow professionally. In youropinion…

What sort of programs would youlike to see sponsored by the Society?Would you be interested in participat-ing in online seminars with distin-guished leaders in the electron devicefield? What topics are of interest toyou – technical subjects relating toyour field of work or soft skills sub-jects such as developing your leader-ship, team building, and networkingand communication skills? Would youlike to see EDS sponsored GOLD sem-inars and or workshops? Would youlike to see more networking events inyour area? What would make Societymembership renewal more appealingto you and your peers? EDS wouldlike to hear from its YOUNG profes-sional members. Reader, please share

your ideas, comments and construc-tive criticisms with your EDS IEEEGOLD Coordinator, Ravi Todi([email protected]), as we are keen foradvice and projects for 2007!

IEEE and GOLD Products andServices for Young MembersOnline resources:• IEEE: http://www.ieee.org/mem-

bership/congrats• GOLD: http://www.ieee.org/organi-

zations/rab/gold/• IEEE Xplore ® – access the world

of IEEE information online throughone dynamic interface.

• IEEE Spectrum – this monthlymagazine is the flagship publica-tion of the IEEE for technologyinnovators, business leaders, andthe intellectually curious. Spec-trum explores future technologytrends and the impact of thosetrends on society and business.

• IEEE Job Site - post your resumeand receive a confidential emailwhen a job listing matches yourskill set.

• IEEE Career & EmploymentResources.

• IEEE Center for Education & Train-ing.

• Electro-Technology Industries(ETI) database.

• GOLD-sponsored internet confer-ences, seminars, and professionalworkshops.

Personal Benefits:• IEEE Personal Email Alias - identify

yourself as part of a worldwidecommunity of innovators by regis-tering for a free IEEE email alias,complete with virus scanning soft-ware.

• What’s New @ IEEE - subscribe toone of eleven monthly emailnewsletters that feature IEEE infor-mation, career assistance andindustry news.

• Your own Web account for onlineservices.

• IEEE Financial Advantage Program

- includes insurance programs,credit cards and investmentopportunities.

• Opportunity to volunteer and trav-el to exotic locations; keep currentin your technical focus, followindustry trends; publish in IEEEJournals and magazines.

Network & Exchange Information at: • Technical Conference Listing -

search through the conferencedatabase to find the next IEEE-sponsored conference/symposiain your area of expertise;

• Local section and Society chapterand affinity group meetings;

• Fun social events.

Discount for Graduating StudentMembers: • IEEE student members who gradu-

ate and are elevated to full IEEEmembership will automaticallyreceive a one-year discount of50% off of the full higher gradeIEEE and Society membershipdues rates upon renewal.

New Member Grade for GradStudents – In 2007, a new GraduateStudent Member (GSM) grade goesinto effect, and the IEEE will make allthe changes necessary for thosewho qualify. Essentially, GSMs con-tinue to pay the low student duesrate, but will be able to vote in IEEEelections (unlike student members)and will be eligible to hold volunteerpositions previously restricted tomember grade or higher in IEEE sec-tions, chapters, and the affinitygroups of GOLD and Women inEngineering. If you have anyqueries, or for further details, con-tact IEEE Member Services (Tel: +1732 981 0060 or E-mail: [email protected]).

Ravi M. TodiEDS IEEE GOLD Representative

IBMEast Fishkill, NY, USA


Not an undergraduate anymore?

EDS Cares!!

Not an undergraduate anymore?

EDS Cares!!

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An IEEE Student Branch gives studentsthe opportunity to meet and learnfrom fellow students, as well as facultymembers and professionals in thefield. A good IEEE Student Branch canbe one of the most positive elementsin an Electrical Engineering, ComputerEngineering or Engineering Technolo-gy department. IEEE Student Branchesare established at over 1,000 universi-ties and colleges throughout theworld. Student Branch activities offernumerous educational, technical, andprofessional advantages of IEEE mem-bership through special projects, activ-ities, meetings, tours and field trips.

Establishing an IEEE StudentBranch requires the signatures of 20IEEE Student members on a peti-tion. The petition must specify thename of the Branch, and the namesof the Interim Student Chair and fac-ulty member who will serve asCounselor of the Branch. The peti-tion must also be approved by theDepartment Chair and two facultymembers, who are also IEEE mem-bers above student grade. Submitthe petition to IEEE Student Ser-vices to begin the approval process,which includes verification of theIEEE membership of the studentsand the faculty members on thepetition, review of the programsoffered at the educational institu-

tion, review and approval by theIEEE Regional Director, the RegionalStudent Activities Committee Chairand the IEEE Regional ActivitiesBoard (RAB). If further informationis required, please contact: IEEEStudent Services, Phone +1 732 5625527/5392, Fax +1 732 463 3657 or e-mail: [email protected]

Once a university/college has estab-lished an IEEE Student Branch, an affil-iation can be made with one or moreof IEEE’s technical societies to form aStudent Branch ‘Chapter’. There arecurrently over 300 IEEE StudentBranch Chapters, with the ElectronDevices Society having 10 at variousinstitutions in a number of regions.The requirements for the establish-ment of an IEEE Student Branch Chap-ter for EDS are as follows:

• A petition by not less thantwelve (12) Student Branchmembers, who are members ofthe IEEE technical Society, mustbe submitted to Spring Shen ofthe EDS Executive Office at 445Hoes Lane, Piscataway, NJ08854 USA or via fax at 732-235-1626.

• The petition must specify thename of the Student Branch,the name of the technical Soci-ety with which the StudentBranch Chapter will be affiliat-

ed, the name of the interimBranch Chapter Chair and thename of the faculty Advisor,who must be a member of IEEEand the technical Society abovestudent grade.

• After the Advisor and the IEEEStudent Branch Executive Com-mittee have approved the peti-tion, it should be sent to theEDS Executive Office.

• Upon receipt of the petition,the EDS Office will forward it toIEEE Student Services to verifythe IEEE and technical Societymembership of individualswho signed the petition. If thepetition is in order, StudentServices staff will take the nec-essary action to obtain formalapproval of the petition by theSociety President, the RegionalDirector and the Regional Stu-dent Activities CommitteeChair. Student Services staffwill acknowledge receipt of thepetition and will keep the facul-ty advisor informed of the sta-tus of the request.

EDS welcomes the formation ofnew Student Branch Chapters andwe look forward to hearing fromyou. If you have any further ques-tions, please contact Spring Shen([email protected]).

How to Form an IEEE Student Branch

and Student Branch Chapter

How to Form an IEEE Student Branch

and Student Branch Chapter

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14eds03.qxd 6/22/07 11:02 AM Page 25


Regional and Chapter NewsRegional and Chapter News

2008 ISPSD- by Don DisneyThe 20th Annual Internat ionalSymposium on Power Semicon-ductor Devices and ICs (ISPSD)will be held May 18–22, 2008, inOrlando, Florida, USA. This con-ference is the premier forum fortechnical discussions in all areasof power semiconductor devices,power integrated circuits, hybridpackaging arrangements , andpower IC applications. This is atruly international conference,with a venue that rotates on athree-year cyc le among NorthAmerica, Europe, and Asia. The2008 conference will be locatedjust outside the entrance to theWalt Disney World Resort inOrlando, Florida.

To submit an abstract for con-sideration, please visit the confer-ence website: www.ecse.rpi.edu/conf/ispsd08 or contact the confer-ence General Chair, Prof. T. PaulChow (chowt@rpi .edu) or theTechnical Chair, Dr. Mohamed Dar-wish ([email protected]).All abstracts must be submitted byOctober 21, 2007.

EDS DL Visitsthe ED Central North Carolina Chapter- by Albert Wang

Prof. Albert Wang of the Illinois Insti-tute of Technology and EDS Vice-President of Membership, visited theED/SSC/MTT Central North CarolinaChapter and delivered a Distin-guished Lecturer (DL) seminar onApril 20, 2007. The DL seminar washeld at the Analog Devices Inc. (ADI)Design Center in Greensboro, NorthCarolina. Prof. Wang was hosted bythe Chapter Chair, Dimitrios Efs-tathiou of ADI, and Prof. NumanDogan of North Carolina A&T Univer-sity (NCATU). Wang’s DL talk, enti-tled “Advanced ESD ProtectionDesign for RF ICs”, discussed theemerging challenges in ESD-protect-ed RF IC designs ranging from ESDprotection theory to new RF ESD pro-tection design techniques to practicaldesign examples. About thirty peo-

ple, including practice engineers, pro-fessors and students from ADI, RFMicro Devices and NCATU, etc,attended the seminar. The DL semi-nar was followed by discussions onvarious IC design topics and IEEEsociety activities.

ED/CPMT Orlando- by Slavica MalobabicOn January 19th, over one hundredgraduate students and professorsattended Dr. Steven Voldman’s talkon electrostatic protection dischargein semiconductor technology. Thetechnical seminar entitled “Electro-static Discharge (ESD) in the Nano-electronic Era” was organized bythe ED/CPMT Orlando Chapter andthe School of Electrical Engineeringand Computer Science at the Uni-versity of Central Florida (UCF),Orlando, with help from the IEEEUCF Student Chapter and the ESDAssociation.

Dr. Voldman is an IEEE Fellow for“Contributions in ESD protection inCMOS, Silicon On Insulator (SOI) andSilicon Germanium (SiGe) Technolo-gy” and he is a member of the IBMBurlington Vermont technologyteam. He is the founder of the “ESDon Campus” lecture program inwhich he provides lectures interna-tionally to encourage understandingof the field of electrostatic discharge,electrical overstress and latchup intoday’s materials, electronic compo-nents, and electrical systems. Dr.Voldman is an author of a three bookseries, the first one on ESD physics,ESD: Physics and Devices; a secondtext on ESD circuits, ESD: Circuitsand Devices, and a new text ESD: RFTechnology and Circuits, as well as acontributor to the text Silicon Germa-nium: Technology, Modeling andDesign. He has written over 150 tech-nical papers, and recipient of 160issued US patents in the area ofsemiconductor technology, CMOSlatchup and ESD.

For additional information contactSlavica Malobabic at [email protected].

USA, CANADA &

LATIN AMERICA

(Regions

1-6, 7 & 9)

USA, CANADA &

LATIN AMERICA

(Regions

1-6, 7 & 9)

ISPSD’08

International Symposium on Power Semiconductor

Devices and ICs

Orlando, Florida, USAMay 18 – 22, 2008

Prof. Numan Dogan (front-left), DimitriosEfstathiou (standing, left-fourth) and Albert

Wang (standing, right-third)

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EDS DL Visits the ED/CPMT Orlando Chapter- by Slavica MalobabicThe ED/CPMT Orlando Chapter andthe School of Electrical Engineer-ing and Computer Science at theUniversity of Central Florida (UCF),Orlando, with help from the IEEEUCF Student Chapter in Orlando,Florida, have had a great pleasureto host EDS Distinguished Lectur-er, Dr. Ortiz Conde. On April 11, atechnical seminar entitled “Com-pact modeling of modern MOS-FETs” took place at UCF, Orlando.Professor Ortiz Conde presentedan overview of MOSFET modelsavailable and up-to-date descrip-tion of modern multi gate MOS-FETs and their compact modeling.Prof. Ort iz Conde is with theDepartment of Electronics at Uni-versidad Simón Bolívar, Caracas,Venezuela. He has authorednumerous papers in national andinternational conferences and atextbook, Analysis and Design ofMOSFETs: Modeling, Simulationand Parameter Extraction.

Very active discussion by thegraduate students and professorstook place during the questions andanswers session.

For additional information contactSlavica Malobabic at [email protected].~ Ibrahim M. Abdel-Motaleb, Editor

2007 WMED- by Steve GroothiusDear Fellow IEEE Members,

The Fifth Annual IEEE Workshop onMicroelectronics and Electron Devices(WMED), held at Boise State Universi-ty, Boise, Idaho, on April 20, 2007, heldat Boise State University, Boise, Idaho,on Friday, April 20, 2007, proved to bea valuable experience for everyonewho attended. It provided a forum for150+ attendees who were interested inreviewing and discussing all aspects ofmicroelectronics including processing,

electrical characterization, design, andnew device technologies. Even afterthe workshop, the 2007 IEEE WMEDwebsite can give you a feeling forthe details and environment of theworkshop through the uploadedpresentation copies and pho-tographs of the speakers and atten-dees. The website can be found at:http://www.ewh.ieee.org/r6/boise/wmed2007/WMED2007.htm

This workshop consisted of 5 invit-ed talks (with 3 IEEE Electron DevicesSociety Distinguished Lecturers), 15contributed papers, 3 popular tutori-als, as well as 6 student posters inearly evening. There were over 40IEEE members in the audiencethroughout the day at the workshop.Several talks and posters presented“work-in-progress” research.

Invited WMED Speakers • Dr. Hans Stork, Sr. VP & Chief Tech-nology Officer, Texas Instruments,Keynote Speaker - “{Technology Chal-lenges for CMOS Density Scaling”

• Dr. Jamal Deen, McMaster Universi-ty, “Noise Issues in CMOS Devicesand Circuits”

• Dr. Juin J. Liou, University of Cen-tral Florida - “ESD Protection inCMOS Technology”

• Dr. Prashant Majhi, SEMATECH/Intel -“CMOS Scaling Beyond High k-MetalGates: Opportunities and Challenges”

• Dr. Nety Krishna, Applied Materials- “New Directions for Process Tech-nologies: Materials, Equipment &Integration”

Invited Tutorials • Dr. Charlie Zhai, Advanced Micro

Devices - “Stress Simulation ofSemiconductor Devices and Packag-ing”, The talk focused on the impor-tance of having a strong backgroundin solid mechanics and vision toaccurately apply stress simulationprinciples from the nanometer scaleof electronic device features up tothe millimeter scale of semiconduc-tor packaging.

• Dr. Kenneth Goodson, Stanford Uni-versity - “Heat Generation andTransport in Nanometer Scale Tran-sistors”, The talk explained thediversity of heat transfer methods innanometer scale device features,the role of phonons, and the types

IEEE EDS Distinguished lecturer Dr. OrtizConde (right) and Dr. J.J. Liou (left) at the

UCF talk

Dr. Steven H. Voldman, Dr. J.J. Liou (5th & 6th from left), as well as students and faculty of the University of Central Florida (UCF)

Dr. Hans Stork (2007 IEEE WMED KeynoteSpeaker) explains some of the barriers andsolutions in high technology manufacturing

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of thermal characterization tech-niques that are available for bothmaterials and functioning devices. Asection of phase change memorydevelopment was also discussed.• Dr. Hanmant Belgal, Intel/IM Flash

Technologies, “Reliability of Float-ing-Gate Flash Memories”, This talkprovided the insight for determiningthe key concepts, role of defects,reliability degradation mechanisms,Flash cell structure and operation,media management, and qualifica-tion methods.

The success of a regional IEEEworkshop like WMED can only beattributed to the hard work and deter-mination of volunteers in the Trea-sure Valley. The IEEE Boise ElectronDevices Society Chapter officers andmembers believe in the WMED con-cept and felt that this particular work-shop provides the needed interactionbetween well-known speakers,microelectronic technologists, andfuture engineers involved in thesemiconductor industry, a forum todiscuss research, explore new tech-niques, and to network with local andremote colleagues. We had a contin-uation of last year’s High School Pro-gram which brings in key engineers,university students, and experts todiscuss items of interest to college-bound students. This year’s talks andpanel discussion challenged thesestudents to give some seriousthought to the career of engineeringand science.

The goal of the 2007 IEEE WMEDwas to provide a set of high qualityprofessional speakers to discuss per-tinent issues and concepts within

today’s semiconductor industry.Judging by the attendee feedback,we are proud to say that the intendedgoal was met and exceeded.

This Workshop is receiving tech-nical co-sponsorship support fromthe IEEE Electron Devices Society.We would also like to thank the oth-er financial sponsors, which includeBoise State University’s College ofEngineering, Micron Foundation, theIEEE Boise Section, and the IEEEBoise Electron Devices SocietyChapter.

~ Sunit Tyagi, Editor

ED Puebla- by Claudia Reyes-BetanzoOn January 17, 2007, Professor JuinJ. Liou, the IEEE EDS Regions/Chap-ters Vice-President, visited the EDPuebla Chapter in order to pro-mote chapter activit ies. At thesame time, Professor Liou pre-sented a talk entit led, “RobustElectrostatic Discharge Protectionin CMOS Technology”, for stu-dents and researchers of theNat ional Inst i tute for Astro-

physics, Optics and Electronics –INAOE, Puebla Chapter headoffice. There were about 50 atten-dees at the talk. The ED PueblaChapter is grateful to Prof. Lioufor his visit and interest in thechapter and his promotion task.

CAS/ED/PEL Venezuela- by A. Ortiz-CondeVenezuela’s CAS/ED/PEL Joint Chaptercontinued with its series of seminarsand workshops. On Thursday, March22, 2007, it organized a two-hour tech-nical seminar at Simón Bolívar Univer-sity, Caracas, entitled “CurrentTendencies in Integrated CircuitDesign.” Dr. Jesús Finol, Senior Engi-neering Director, Freescale Semicon-ductor, Arizona, USA, was the specialinvited speaker for this occasion. Dr.Finol is well known internationally forhis R&D activities in IC design fortelecommunication systems, such aswireless IC design for cellular telepho-ny, paging systems and two-wayradios. He has authored numerouspapers in national and internationalconferences and has been awardednine U.S. patents in integrated circuitdesign, with three more pending. Theseminar presented a comprehensiveand up-to-date description of modernintegrated circuit design methodolo-gies, and their connection to the evolu-tion of the semiconductor industry dueto aggressive device feature size reduc-tion. More than 50 university facultymembers and graduate and under-graduate students attended the semi-nar. There was a very activeparticipation of the audience, and themany interesting questions andanswers motivated additional informalmeetings, which took place after theconclusion of the official seminar. The

The 150+ person audience listened intently and asked some very focused questions for all of ourinvited speakers

Prof. Juin J. Liou (right) and Puebla ChapterChair, Claudia Reyes-Betanzo

Dr. Finol during his presentation at Simón BolívarUniversity, Caracas, Venezuela

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following day, Dr. Finol met with differ-ent research groups of Simón BolívarUniversity to discuss ongoing collabo-rative activities.

For additional information contactProfessor Adelmo Ortiz-Conde [email protected].

~ Jacobus W. Swart, Editor

ED Israel- by Gady GolanOn Wednesday, January 24, 2007, DrEyal Brami of Motorola Israel, deliv-ered his lecture “Mobile Display Mar-ket Overview Applications” at theHolon Institute of Technology (HIT),Holon, Israel.

Dr. Brami gave a review of the dis-play market, the major driving forcesfor growth and historical review,styling and other critical features incell phones. How cell phones and dis-plays are related to each other. Cellu-lar phones market, tiers, variations,their impact on displays in generaland displays in cell phones in particu-lar. There were around 80 peopleattending the lecture.

On Wednesday, April 11, 2007, Dr.Eyal Sharon, Eastronics, Israel, pre-sented his talk on “Trends in Program-mable devices - Altera”, to around 65attendees at the Holon Institute ofTechnology (HIT), Hilon, Israel.

Both talks were chaired by Prof.Gady Golan, EDS Israel ChapterChair.

2007 ISSS-MDBS- by Fei ChenThe 4th International Summer Schooland Symposium on Medical Devicesand Biosensors (ISSS-MDBS), spon-sored by the IEEE Engineering inMedicine and Biology Society (IEEE-EMBS), will be held at St. Catharine’sCollege, Cambridge University, UK,August 19-22, 2007. The theme is“From Terahertz Imaging to Tele-health Technologies”.

Terahertz imaging and spec-troscopy techniques have progressedrapidly over the last decade andnumerous medical applications arecurrently being explored. This com-

bined summer school and symposiumis intended to promote awareness ofterahertz technology in the medicalfield and to inform terahertz scientistsof the latest advancements in medicaldevices and telehealth, with a view tointegrating terahertz technology intomedical devices in the future.

In the symposium sessions, invitedand contributed talks will describeoriginal work in research and devel-opment. There will also be poster ses-sions of additional contributed work.The summer school sessions willinclude informative tutorials aboutthe main topics of interest of: Imagingtechniques; spectroscopy techniques;medical applications; pharmaceuticalapplications; wearable medicaldevices; body sensor networks; low-cost healthcare equipment; standardsfor healthcare devices; and textileelectronics. Laboratory tours will beheld on 22 August giving scientistsfrom all backgrounds further opportu-nities to broaden their knowledge ofmedical science.

This event directly precedes the29th Annual International Conferenceof IEEE-EMBS in Lyon (23-26 August)themed “Sciences and Technologiesfor Health”.

For inquiries, contact: Dr. E. Pickwell-MacPherson ([email protected]),Tel: +852 2609-8260 or Prof. Y.T. Zhang([email protected]), Tel: +8522609-8459.

~ Zhirun Hu, Editor

ED Japan- by Atsushi KurobeOn January 23rd, the annual meetingof the ED Japan Chapter was held inTokyo. Dr. Atsushi Kurobe, JapanChapter Chair reported the 2005 activi-ties and the 2006 plan for the Chapter.At the meeting, the 2005 EDS JapanChapter Student Award was presentedto two students for their outstandingactivities in the research of electrondevices last year. Tetsu Ohtou (Univ.of Tokyo) and Masaharu Kobayashi(Univ. of Tokyo) received the awardsfor their excellent IEDM papers,“Experimental demonstrations ofsuperior characteristics of variable

body-factor (g) fully-depleted SOIMOSFETs with extremely thin BOX of10 nm” and “Experimental study onquantum structure of silicon nanowireand its impact on nanowire MOSFETand single-electron transistor, ”respectively.

Following the annual meeting onthe same day, the Briefing Sessionon the 2006 IEDM was held. Sixspeakers gave summary talks on thehighlights of the IEDM. They were“Modeling and simulation” by Dr. M.Hane (NEC Corp.), “Nanodevices” byDr. K. Uchida (Toshiba Corp.), “III-Vand quantum devices” by Prof. K. Yo(Hokkaido Univ.), “CMOS process”by Dr. M. Kase (Fujitsu Ltd.), “CMOSdevice” by Dr. H. Wakabayashi (SonyCorp.) and “Integrated Circuits” byDr. Y. Matsui (Hitachi Ltd.). This ses-sion has gained widespread populari-ty among engineers in Japan whoare unable to attend the IEDM, sinceit is an opportunity for them to famil-iarize themselves with the latestinformation on electron device tech-nology. This year’s Briefing Sessionwas very successful with more than70 participants.

The committee meeting of the EDJapan Chapter was also held thisJanuary. The guests, namely, Dr. Tet-suhiko Ikegami, Vice Chair of JapanCouncil; Prof. Kunihiro Asada, Chap-ter Operations Committee Chair; Dr.Tsutomu Sugawara, Secretary of

EUROPE, MIDDLE

EAST & AFRICA

(REGION 8)

EUROPE, MIDDLE

EAST & AFRICA

(REGION 8)

ASIA & PACIFIC

(REGION 10)

ASIA & PACIFIC

(REGION 10)

The committee meeting of the ED JapanChapter this January. From right to left, frontrow: Prof. H. Iwai, Partner and EDS Jr. Past

President; Dr. T. Ikegami, Vice Chair of JapanCouncil; Dr. A. Kurobe, ED Japan Chapter Chair;Dr. T. Sugawara, Secretary of Tokyo Chapter. At

the back: Prof. K. Asada, Chapter OperationsCommittee Chair; Prof. K. Tsutsui, EDS

Newsletter Regional Editor; Dr. H. S. Momose,Secretary of the ED Japan Chapter

14eds03.qxd 6/22/07 11:02 AM Page 29


Tokyo Chapter; Prof. Hiroshi Iwai,EDS Jr. Past President; Prof. KenjiTaniguchi, EDS Kansai Chapter ex-Chair; and Prof. Kazuo Tsutsui, EDSNewsletter Regional Editor, were asource of much valuable advice forthe Chapter. The 2005 activities andthe 2006 plan for the Chapter wereapproved at the meeting.

ED Kansai- by Michinori NishiharaThe ED Kansai Chapter held a Tech-nical Meeting at Osaka University,Nakanoshima Center, Osaka, Japan,on January 26, 2007. Three presti-gious lecturers gave presentationson device technology trends review-ing papers presented at the 2006International Electron Devices Meet-ing. This is a good opportunity forED Kansai Chapter members whocould not attend IEDM 2006 to learnthe most advanced device technolo-gy topics. The first talk was on thelatest silicon device technology trendby Dr. Tomohiro Yamashita (RenesasTechnology Corp.). He described top-ics about the most advanced devicetechnology including High-k andmetal gate technology. The secondtalk on silicon process technologyincluding gatestack technology wasgiven by Dr. Jiro Yugami (RenesasTechnology Corp.) He identified pos-sibility of recent research activitiesregarding mobility enhancementtechnique using hybrid orientationand other strained silicon technolo-gy. The last speaker was Dr. Yasuhi-ro Uemoto (Matsushita Electric). Hereviewed compound and powersemiconductor technology concern-ing GaN, SiC and other materials. Hetalked about promising future ofGaN power devices for high frequen-

cy applications. Prof. Yasuhisa Omu-ra of Kansai Univ. chaired the meet-ing and the number of participantswas 28 including students andresearchers from industries.

ED Korea- by Hyungcheol ShinFor the ED Korea Chapter, therehave been several activities, includ-ing the following two this year. Thefirst activity is awarding of the bestposter papers and the second one isthe Distinguished Lecturer Program.These activities are describedspecifically below.

Best Poster Paper AwardsThe IEEE ED Korea Chapter award-ed two ‘Best Poster Awards’ to KooBon Tae from the Electronics andTelecommunications ResearchInstitute, and Song Yong Seonfrom Kyungpook National Univer-sity, at the 14th Korean Conferenceon Semiconductors which washeld in Jeju, Korea, from February8-9, 2007. The two papers, “SoCDesign of Ground Wave Receiver”written by Koo Bon Tae and “Unin-tentionally Doped P Type GaN Filmon Si Substrate with ExtremelyHigh Mole Mobility” written bySong Yong Seon and Lee Dong Sikhad been accepted by the 13thconference held in February 2006and selected as ‘Best PosterPapers’ by reviewers among itscommittee.

Invitation of IEEE DistinguishedLecturer, Prof. Juin J. LiouWe invited an IEEE DistinguishedLecturer, Prof. Juin J. Liou. Hereceived his Ph.D. in electrical engi-neering from the University of Cen-

tral Florida, Orlando, in 1987, wherehe is now a professor. His seminarwas held in Seoul National Universityon January 29, 2007. The title of theseminar was “Robust Electronics Dis-charge (ESD) Protection in CMOSTechnology.”

~ Kazuo Tsutsui, Editor

ED Taipei- by Steve ChungThe ED Taipei Chapter held a DLtalk on February, 5, 2007. Prof.Hiroshi Iwai of the Tokyo Instituteof Technology, was invited to deliv-er a lecture entitled “Nano-CMOSTechnology and Its Beyond”. In thetalk, he addressed various techno-logical possibilities, such as newchannel materials, III-V high mobili-ty FET, high-k materials, and siliconnanowire transistors, after the con-ventional CMOS technology reach-ing its limit. The talk was attendedby 60 participants from local uni-versities. Prof. Iwai was then invitedby United Microelectronics Corpo-ration (UMC) to have a technicaltour to Tainan Science Park insouthern Taiwan.

The upcoming international eventto be held in Taiwan is the IEEE Con-ference on Electron Devices and Sol-id-State Circuits (EDSSC’07). TheConference will be held December20-22, 2007, hosted by the SouthernTaiwan University in Tainan and isthe first time to move from HongKong to Taiwan. The submissiondeadline is July 26, 2007. You maytake this opportunity to visit the newScience-Based Industrial Park insouthern Taiwan, where severalmajor semiconductor manufacturingcompanies, such as TSMC and UMC,and display manufacturers, such Chi-Mei, are located. Further information

Koo Bon Tae from Electronics andTelecommunications Research Institute andYong Yong Seon from Kyungpook National

University received Best Paper Awards

Prof. Shin and Prof. Liou after the seminar

Technical Meeting at Osaka University,Nakanoshima Center, on January 26, 2007

14eds03.qxd 6/22/07 11:03 AM Page 30


of the EDSSC’07 can be found athttp://www2.eecs.stut.edu.tw/~edssc2007/.

~ Hei Wong, Editor

ED/MTT India- by Kandala ChariIn the last quarter, the ED/MTT Chap-ter activities covered the followingevents: • The Chapter co-sponsored two

international events organized byElectronics Today. First is an inter-national meeting Componex/Elec-tronic India 2007, held in Delhi, onFebruary 6-8, 2007. A major TradeFair cum Exhibition of ElectronicComponents, Materials and Produc-tion Equipment was held in PragatiMaidan. More than 800 exhibitorsfrom 25 countries participated andthe event attracted over 25,000 visi-tors from India, SAARC and othercountries. Concurrent with thisevent, the International Conferenceon “Electronic Contract Manufactur-ing- Indian Perspective” was heldon February 7th. This later eventfeatured 15 lead speakers in threesessions touching on variousaspects of EMS in India, ContractManufacturing/EMS scenario and

Technologies in CM. The discus-sions have brought out the EMSopportunities in the Indian subcon-tinent; supply chain management,IT hardware business area, Equip-ment supplier matters, China/Indiamodes, stress free singulation ofPCB’s, High resolution X-ray inspec-tion, Cost effective PCB testing inproduction and Lead free soldering,etc. The events were also co-spon-sored by 23 other organizations/associations of India and overseas.Mr. S. Swaran, Editor-in-Chief, coor-dinated these two events.

• The Chapter co-sponsored a one-day VLSI Awareness Workshop onFebruary 23, 2007, organized by theDepartment of Electronics and Com-munication Engineering, VLBJanakiammal College of Engineer-ing and Technology (VLBJCET),Coimbatore, Tamil Nadu. The Work-shop featured 4 sessions: Analog ICDesign by Prof. K. RadhakrishnaRao, TI Bangalore; Digital VLSIDesign Flow by Mr. D. S. HarishRam, ECE Department, VLBJCET; ICTesting by Dr. M. C. Bhuvaneswari;and FPGA Design and Architectureof FPGAs by Mr. G. V. Srinivasa,Agama Design and training centre,Bangalore. The talks covered basicsto advanced concepts in digital andanalog designs, mixed signal ele-ments, test methodologies for com-binational and sequential circuits,FPGA design issues and a demo ofFPGA based SOC design flow usingembedded tools. The workshop wasattended by over 150 students andfaculty from 7 engineering and tech-nology colleges in and aroundCoimbatore.

• The Chapter co-sponsored a 3-dayWorkshop on “Analog and RFDesign” organized by EEE Group,Brita Institute of Technology,Pilani, Rajasthan, on their campusduring March 16-18, 2007. TheWorkshop featured talks by 8 keyresource persons from academiaand the VLSI industry. Topics cov-ered ranged from VLSI architectur-al explorations, scalability andpower issues, Low power deepsubmicron, Bandgap and voltageregulators, PLL, Analog Filters and

RF Transceivers. Attendees werealso given hands-on experience ondesign tools, Mentor Graphics andCadence. Dr. Anu Gupta and Dr.Rajnish Sharma of BITS coordinat-ed the event from the BITS side.

• The Chapter has also co-spon-sored a workshop cum Sympo-sium on “Electromagnetic Fieldsin Environment: Implications andSolutions (EMF-ENVIS 2007)”organized by the School of Envi-ronmental Sciences, New Delhi,from March 23-24, 2007. Detailswill follow in the next report.

• Under the STAR programme, thechapter co-sponsored the ScienceDay events and Exhibition held atthe KBMC Girls High School Eluru,on February 28, 2007. STAR stu-dents won several prizes at theevents. Ms. VDPJ Srilakshmi, Ms.M. Ayesha and Ms. P. Padmajawon in essay writing; Ms. K. Naga-mani, Ms. P. Bhagyasree, and Ms.Durga Bhavani in science exhibits.Ms. Dharani, faculty and STAR rep,coordinated the events.

MTT/AP/ED Penang - by Richard KeatingThe MTT/AP/ED Penang Chapter is anew Joint Chapter, whose membersare mainly from the High Tech compa-nies in and around Penang. The chap-ter had three excellent talks at thebeginning of the year. The first was byDr. Hong Shi, from the PackagingTechnology Department of Altera Cor-poration. His talk was titled “SignalIntegrity in FPGA Devices and applica-tions”. It was held at the Penang SkillsDevelopment Center in Bayan Lepason December 28, 2006. Dr. Hong Shi

ED Taipei held a DL talk on February 5th. Prof.H. Iwai (middle) pictured with (from left to right)

Professors. H. L. Huang, Albert Chin, SteveChung (Chapter Chair), and K. S. Chang-Liaolwc

VLSI Awareness Workshop,VLBJCET,Coimbatore Dr. Hong Shi presenting his paper

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gave a very well received talk on theproblems associated with Noise onadvanced FPGA devices.

The Chapter was then visited onFebruary 13, 2007, by Dr. Steve C.Cripps, an independent design consul-tant. His talk was titled “A New Per-spective on PA Efficiency EnhancementTechniques”. This was Dr. Cripps’ sec-ond presentation to our chapter, hav-ing also presented in 2006.

Ng Aik Chun presented his talkon “MMIC Design for Manufactur-ing Saves Time and Money”. Mr.Ng’s talk focused on the Design forManufacturing functions that existwithin Agilent ADS software for RFand MMIC design. He is a memberof Agilent’s EEsof EDA Division.Mr. Ng described the four aspectsto the DFM functions of the ADSsoftware.

We would like to thank PSDC andMotorola for their support of ourChapter.

ED SJCE Student BranchChapter-by Karthik YWith the endless pursuits of the zeal-ous students, the ED SJCE StudentBranch Chapter, yet again came outwith flying colours organizing aseries of workshops and talks, thusstanding true to the words ‘Redefin-ing Technicality’. The ED SJCE, whichhas always strived to hone the tech-nical skills of the students, has nowproved to be a forum to celebrate thevitality of technology. The majorevents held this semester were:

Felicitation of Dr. Navakanta Bhat:The feather to the cap of the ED SJCEStudent Branch Chapter this year

came with the Felicitation of Dr.Navakanta Bhat, Prof., IISc, Banga-lore (also one of the chapter mentorsof IEEE EDS SJCE) on March 17,2007. The ED SJCE student chaptertook an opportunity to felicitate Dr.Navakanta Bhat who was awardedthe SATHISH DHAWAN AWARD forhis outstanding research work for thegovernment of Karnataka. The cere-mony was presided by Dr. NavakantaBhat, Dr. Ashok Rao, Former head,CEDT (Centre for Electronics Designand Technology), Prof. M. Sukumar,Head of the Department of Instru-mentation Technology, SJCE and Mr.Karthik Y, Chairman, EDS SJCE Stu-dent Branch Chapter. Dr. C. R. Venu-gopal, Chapter counselor of the EDSJCE, also graced the occasion.

The felicitation was followed by aninformative talk by Dr. NavakantaBhat, which gave an insight into“Nanoelectronics, An explorationthrough the periodic table”, regard-ing the various elements which canbe used in silicon fabrication, wasindeed thought-provoking. Thustouching on the basic aspects ofVLSI, the talk also gave a peek intothe developments and the immenseresearch taking place in the world ofNanotechnology, particularly inNanoelectronics.

This was followed by a generalmeeting of EDS members with Dr.Navakanta Bhat and Dr. C. R. Venu-gopal, which emphasized the futureplans of EDS. The initiative to have alab for EDS on the college campus

and to arrange for field trips evincedthe enthusiasm of the students,though the practical implementationwould need tremendous efforts.Thus, Dr. Navakanta Bhat’s presencerejuvenated the young minds, infus-ing new spirits.Workshop on Basic ElectronicCircuits:The Workshop on the Basic Electron-ics lab was conducted on March 2,2007, in the Analog Lab of SJCE. Themain aim of this workshop was tointroduce the inquisitive students ofthe circuit branches to hobby circuits,which would not only help the stu-dents to experience the practicalimplementation of their theoreticalknowledge, but also help them toexplore the various possibilities tobuild more efficient circuits. Theworkshop was conducted by Mr.Arun Raj, a 4th semester student ofInstrumentation Technology. The cir-cuit the students worked on was aLight Sensitive Burglar Alarm, pre-cisely, a basic Laser security system.

Workshop on Microcontroller8051:With Embedded Systems gaining ahuge momentum in the presentworld, it was the perfect time to holda workshop on 8051 to encouragestudents to take up hardware pro-gramming. The workshop concentrat-ed on the instruction set, the differentaddressing modes and the otherimportant aspects of the microcon-troller. It was made appealing to the

Felicitation Ceremony of Dr. Navakanta Bhat at SJCE campus. People presiding are (from left to right)Mr. Karthik Y, Dr. Navakanta Bhat, Prof. M Sukumar and Dr. Ashok Rao

Mr. Ng Aik Chun presenting his talk

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students by first showing them thepracticality of the program which wasto generate various patterns of lightusing LEDs. The program written forthat was explained on the basis of theexperiment, which ensured an inter-active and lively crowd.

Role of EDS in CYBERIA ’07:The ED SJCE Student Branch Chapteris organizing two exhilarating hard-ware events for CYBERIA ’07, thenational level technical fete of IEEE-SJCE, scheduled to be held fromMarch 22-25, 2007. The two eventsinclude IMPEDANCE and µ8X. WhileImpedance is a hardware designingcontest where students are encour-aged to come up with an efficientdesign to realize a particular circuit,µ8X is an assembly language pro-gramming contest.

Thus EDS aims at fueling the stu-dents to come up with innovativeconcepts beating the conventionalones. EDS plans to conduct a series oftechnical events in the future.Encountering new frontiers each year,EDS gets stronger, infusing vibrantaspirations and undeemed spiritsamong the students, thus trying togroom them and aid them to thrive inthis technically challenging world.

REL/CPMT/ED Singapore- by Alastair Trigg Electrostatic Discharge (EDS) was thefocus of two of our talks during thefirst quarter of 2007. On February 1st,J.J. Liou of the Department of Electri-cal and Computer Engineering, Uni-versity of Central Florida, EDSDistinguished Lecturer, gave a talk on“Robust Electrostatic Discharge(ESD) Protection in CMOS Technolo-gy” at Nanyang Technological Uni-

versity (NTU). The talk attracted over60 participants.

Later in the month another Distin-guished Lecturer and IEEE Fellow,Steven Voldman of IBM, spoke on“Electrostatic Discharge ESD in theNano electronic Era”, also at NTU.Again the talk was very well attend-ed. The challenge of ESD for currentand future generation devices is onethat has attracted the attention ofmany engineers in Singapore both inindustry and the academic world.

Earlier in the year on January 25th,Dr. Thomas O’Reilly of MIT, talked ona very different topic, “InterferenceLithography, Practice and Applica-tions”, in a meeting co-organized withthe Singapore Student Chapter of theOptical Society of America. The talkconcentrated on practical issues inusing interference lithography, thesystem layout and optimization withphotoresist. Dr. O’Reilly described lat-er work which makes use of immer-sion techniques and provides asmallest feature size of ~ 160 nm.After his one- hour talk, questions andanswers with the 30 participants con-tinued for another 30 minutes.

Our Chapter co-sponsored thetwo-day Symposium of the Singa-pore MIT Alliance (SMA). This yearthe symposium focused on “Chal-lenges for Advanced Silicon-BasedDevices” and “Nanotechnology on aSilicon Platform”. The symposiumcovered a wide range of topics fromrelatively conventional but cuttingedge semiconductor developmentsto more “blue skies” work on nan-otubes and self organising devices.

During the lunch break of the sec-ond day there was a student postercompetition at which many of thestudents considered not only tech-nology but also the commercial andIP aspects of implementing it. Afterthe symposium most of the contribu-tors and organizers attended a din-ner held at Haw Par Villa, an earlytwentieth century theme park dedi-cated to Chinese mythology. After atraditional Chinese banquet, many ofthe participants showed off theirsinging abilities in a karaoke session.

Chapter organizes two major con-ferences each year, InternationalSymposium on the Physical and Fail-ure Analysis of Integrated Circuits(IPFA) and the Electronics PackagingTechnology Conference (EPTC). Thisyear IPFA will be held in Bangalore,India, a first for the conference. TheConference will be held in July andthe closing date for abstract submis-sion has now passed but full informa-tion can be found at the website:http://ewh.ieee.org/reg/10/ipfa/html/2007/index.htm.

The abstract submission deadlinefor EPTC, which will be held in Singa-pore in December, is May 15, 2007.Full details of EPTC can be found atthe website: http://eptc2007.confs.org/.

~ Xing Zhou, Editor

Prof. J.J. Liou (middle) with chapter committeemembers, K.L. Pey (left) and X. Zhou (right)

Correction

Correction to the 2006 EDS Education Award Winner article in the April2007 Issue – Society News section, page 21

The textbook, Fundamentals of Carrier Transport, was published in 2000by Cambridge University Press (not Oxford as stated).

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August 16 - 17, 2007, T IEEE InternationalSymposium on Microwave, Antenna, Prop-agation and EMC Technologies for WirelessCommunications Location: Dianzi UniversityHotel, Hangzhou, China Contact: Mengqi Zhou E-Mail: [email protected] Deadline:3/31/07 www: www.cie-china.org/mape2007

August 21 - 24, 2007, T Topical Workshop onHeterostructure Microelectronics Location:Kazusa Arc, Kisarazu-shi, Chiba, Japan Contact:Takatomo Enoki E-Mail: [email protected] Dead-line: 4/9/07 www: http://www.twhm.net/

August 26 - 30, 2007, * IEEE Non-VolatileSemiconductor Memory Workshop Location:Hyatt Regency Monterey, Monterey, CA, USA Con-tact: Stephen Keeney E-Mail:[email protected] Deadline: 5/25/07www: http://www.ewh.ieee.org/soc/eds/nvsmw/

August 27 - 29, 2007, T International Sympo-sium on Low-Power Electronics and DesignLocation: Embassy Suites, Portland, OR, USA Con-tact: Anand Raghunathan E-Mail: [email protected] Deadline: 3/2/07 www:http://www.islped.org

September 3 - 6, 2007, T Symposium onMicroelectronics Technology & Devices Loca-tion: Rio Othon Palace Hotel, Rio de Janeiro, RJ,Brazil Contact: Jacobus Swart E-Mail:[email protected] Deadline: 3/26/07 www:www.sbmicro.org.br/sbmicro

September 5 - 7, 2007, T International Confer-ence on Electrical and Electronics Engineer-ing Location: Hotel Ejecutivo, Mexico City, MexicoContact: Arturo Minor Martinez E-Mail: [email protected] Deadline: 5/21/07 www: iceee.ie.cin-vestav.mx

September 9 - 14, 2007, T International Confer-ence on Noise in Physical Systems and 1/FFluctuations Location: National Institute for YouthEducation, Shibuya-ku, Tokyo, Japan Contact:Munecazu Tacano E-Mail: [email protected]: 1/31/07 www: http://icnf.meisei-u.ac.jp/

September 10 - 14, 2007, T European Solid-State Device Research Conference Location:

TU Muenchen Arcisstrasse, Munich, Germany Con-tact: Philip Teichmann E-Mail: [email protected]: 4/7/07 www: http://www.essderc.org/

September 10 - 14, 2007, T InternationalCrimean Microwave Conference“Microwave & Telecommunication Tech-nology” Location: Sevastopol National Techni-cal University, Sevastopol, Ukraine Contact:Pavel Yermolov E-Mail: [email protected]: 5/11/07 www: www.crimico.org

September 15 - 17, 2007, @ IEEE InternationalSymposium on Semiconductor Manufactur-ing Location: Marriott Santa Clara, Santa Clara,CA, USA Contact: Maria Hess E-Mail:[email protected] Deadline: 5/25/07 www:www.issm.com

September 16 - 19, 2007, T IEEE CustomIntegrated Circuits Conference Loca-tion: Double Tree Hotel, San Jose, CA, USAContact: Melissa Widerkehr E-Mail: [email protected] Deadline: 4/19/07www: http://www.ieee-cicc.org

September 16 - 21, 2007, T International Con-ference on Nitride Semiconductors Location:MGM Grand Hotel, Las Vegas, NV, USA Contact:TMS Meeting Services E-Mail: [email protected]: 4/2/07 www: www.tms.org/Meet-ings/specialty/icns7/home.html

September 17 - 21, 2007, T International Con-ference on Electromagnetics in AdvancedApplications Location: Torino Incontra CongressCenter, Torino, Italy Contact: Guido Lombardi E-Mail: [email protected] Deadline: 2/23/07www: www.iceaa.polito.it

September 17 - 19, 2007, T European Con-ference on High Temperature ElectronicsLocation: Oxford, United Kingdom Contact: E-Mail: Not Available Deadline: Not Availablewww: Not Available

September 17 - 20, 2007, T IEEE Internation-al Seminar/Workshop on Direct andInverse Problems of Electromagneticand Acoustic Wave Theory Location: Inst.Of Applied Prob. Of Mechanics & Math

(NASU), Lviv, Ukraine Contact: MykhalyoAndriychuk E-Mail: [email protected] Dead-line: 7/15/07 www: Not Available

September 18 - 21, 2007, T International Con-ference on Solid-State Devices and Materi-als Location: Tsukuba International CongressCenter, Tsukuba, Ibaraki, Japan Contact: NaomiKutsuna E-Mail: [email protected] Deadline:5/10/07 www: www.ssdm.jp

September 19 - 21, 2007, T International Con-ference on Microelectronics and ComputerScience Location: Technical University of Moldova,Chisinau, Moldova Contact: Ion Tiginyanu E-Mail:[email protected] Deadline: 6/1/07 www:www.icmcs.utm.md/

September 25 - 27, 2007, @ IEEE Internation-al Conference on Simulation of Semicon-ductor Processes and Devices Location: TUVienna, Vienna, Austria Contact: Tibor GrasserE-Mail: [email protected] Deadline:3/1/07 www: http://www.sispad.org

September 26 - 28, 2007, T International Sym-posium on Advanced Gate Stack Technolo-gy Location: Westin City Center Hotel, Dallas, TX,USA Contact: Cassandra Muse E-Mail: [email protected] Deadline: Not Availablewww: sematech.org

September 30 - October 3, 2007, T IEEEConference on Intelligent Transporta-tion Systems Location: Hilton Hotel, Belle-vue, WA, USA Contact: Paul Kostek E-Mail:[email protected] Deadline: 3/1/07 www:http://www.ewh.ieee.org/tc/its/

September 30 - October 2, 2007, @ IEEE Bipo-lar/BiCMOS Circuits and Technology Meet-ing Location: Boston Marriott Long Wharf, Boston,MA, USA Contact: Janice Jopke E-Mail:[email protected] Deadline: 3/1/07 www:www.ieee-bctm.org

October 1 - 4, 2007, * IEEE International SOIConference Location: Miramonte Resort & Spa,Indian Wells, CA, USA Contact: Bobbi ArmbrusterE-Mail: [email protected] Deadline: Not Avail-able www: www.soiconference.org

The complete EDS Calendar can be found at our web site:http://www.ieee.org/society/eds/meetings/meetings_calendar.xml Please visit!

EDS MEETINGS CALENDAR

(As of June 18, 2007)

EDS MEETINGS CALENDAR

(As of June 18, 2007)

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October 2 - 5, 2007, T International Con-ference on Advanced Thermal Pro-cessing of Semiconductors Location:Grand Hotel Baia Verde, Cannizzaro, Cata-nia, Sicily, Italy Contact: Bo Lojek E-Mail: [email protected] Deadline: 5/31/07 www:www.ieee-rtp.org

October 3 - 5, 2007, * International Semicon-ductor Conference Location: Sinaia Hotel, Sina-ia, Romania Contact: Cristina Buiculescu E-Mail:[email protected] Deadline: 6/10/07 www:www.imt.ro/cas

October 7 - 12, 2007, T Symposium on ULSIProcess Integration Location: Hilton, Washing-ton, DC, USA Contact: Cor Claeys E-Mail:[email protected] Deadline: 5/26/07 www: N/A

October 8 - 10, 2007, T International Work-shop on Computational Electronics Location:Campus Center of University of Massachusetts,Amherst, MA, USA Contact: Massimo Fischetti E-Mail: [email protected] Deadline: 6/1/07www: www.ecs.umass.edu/iwce

October 8 - 10, 2007, T IEEE InternationalConference on Computer Design Location:Squaw Creek Resort, Squaw Valley, CA, USA Con-tact: Kevin Rudd E-Mail: [email protected]: Not Available www: www.iccd-confer-ence.org

October 8 - 10, 2007, T IEEE EuropeanMicrowave Integrated Circuits ConferenceLocation: ICM, Munich International Congress Cen-tre, Munich, Germany Contact: Fred Schindler E-Mail: [email protected] Deadline: 2/25/07www: www.eumweek.com

October 8 - 12, 2007, T European Sympo-sium on Reliability of Electron Devices,Failure Physics and Analysis Location:Palatium-Arcachon, Bordeaux, France Contact:M. Garcia E-Mail: [email protected] Deadline:3/16/07 www: http://esref07.ixl.fr/wel-come/index.html

October 14 - 17, 2007, * IEEE CompoundSemiconductor IC Symposium Location: HiltonPortland & Executive Tower, Portland, OR, USAContact: Mohammad Madihian E-Mail: [email protected] Deadline: 5/7/07 www:http://www.csics.org/

October 15 - 16, 2007, T International SoCDesign Conference Location: Coex ConferenceCenter, Seoul, Korea Contact: Seongsoo Lee E-Mail:[email protected] Deadline: Not Available www:www.isocc.org

October 15 - 17, 2007, T IFIP InternationalConference on Very Large Scale Integra-tion Location: Georgia Tech Hotel, Atlanta, GA,USA Contact: Vincent Mooney, III E-Mail:[email protected] Deadline: 4/9/07 www:www.vlsisoc2007.gatech.edu

October 15 - 18, 2007, * IEEE InternationalIntegrated Reliability Workshop Location:Stanford Sierra Conference Centers, South LakeTahoe, CA, USA Contact: Roy and Becky Walker E-Mail: [email protected] Deadline: 7/13/07 www:www.iirw.org

October 28 - 31, 2007, T IEEE InternationalConference on Sensors Location: Hyatt RegencyAtlanta, Atlanta, GA, USA Contact: Katharine ClineE-Mail: [email protected] Deadline:4/3/07 www: www.ieee-sensors2007.org

November 4 - 8, 2007, T IEEE InternationalConference on Computer Aided DesignLocation: DoubleTree Hotel San Jose, San Jose, CA,USA Contact: Kathy Embler E-Mail: [email protected]: 4/11/07 www: www.iccad.com

November 5 - 8, 2007, T International Micro-processes and Nanotechnology Confer-ence Location: Kyoto International Conference Hall,Kyoto, Japan Contact: E-Mail: Not Available Dead-line: 6/30/07 www: www.imnc.jp

November 6, 2007, T IEEE Electron DevicesActivities in Western New York ConferenceLocation: University of Rochester, Rochester, NY,USA Contact: Karl Hirschman E-Mail:[email protected] Deadline: Not Available www: NotAvailable

November 10 - 13, 2007, T Non-VolatileMemory Technology Symposium, Location:Hyatt Regency Albuquerque, Albuquerque, NM,USA, Contact: Kristy Campbell, E-Mail: [email protected], Deadline: 6/2/07, www:coen.boisestate.edu/nvmts

December 3 - 7, 2007, T International Photo-voltaic Science & Engineering ConferenceLocation: Fukuoka International Congress Center,Fukuoka, Japan Contact: Yoshio Ohsita E-Mail:[email protected] Deadline: 7/15/07 www:http://www.pvsec17.jp

December 6 - 8, 2007, * IEEE SemiconductorInterface Specialists Conference Location: KeyBridge Marriott, Arlington, VA, USA Contact: DinaTriyoso E-Mail: [email protected]: 7/21/06 www: www.ieeesisc.org

December 10 - 12, 2007, * IEEE Internation-al Electron Devices Meeting Location:Washington Hilton and Towers, Washington,DC, USA Contact: Phyllis Mahoney E-Mail: [email protected] Deadline: June 22, 2007www: http://www.ieee.org/conference/iedm

December 12 - 14, 2007, T International Semi-conductor Device Research SymposiumLocation: Stamp Student Union, Unv. Of Maryland,College Park, MD, USA Contact: Phillip ThompsonE-Mail: [email protected] Deadline: NotAvailable www: www.ece.umd.edu/isdrs2007

December 12 - 14, 2007, T International Con-ference on Field-Programmable Technolo-gy, Location: Kitakyusyu International ConferenceCenter, Kitakyusyu, Japan, Contact: Tadao Naka-mura E-Mail: [email protected],Deadline: 6/25/07, www: www.kameyama.ecei.tohoku.ac.jp/icfpt07

December 15 - 19, 2007, T Advanced Work-shop on ‘Frontiers in Electronics’, Location:Park Royal Hotel, Cozumel, Mexico, Contact:Michael Shur, E-Mail: [email protected], Deadline:10/1/07, www: nina.ecse.rpi.edu/shur/wofe07/

December 16 - 20, 2007, T InternationalWorkshop on the Physics of Semiconduc-tor Devices Location: Indian Inst. Of Tech., Bom-bay & TIFR Mumbai, Mumbai, India Contact:V.Ramgopal Rao E-Mail: [email protected] Dead-line: 5/15/07 www: http://www.iwpsd.net/

December 20 - 22, 2007, T IEEE Conference onElectron Devices and Solid State CircuitsLocation: Southern Taiwan University of Technology,Tainan, Taiwan Contact: T.K. Chiang E-Mail: [email protected] Deadline: 7/29/07 www:www2.eecs.stut.edu.tw/~edssc2007

December 20 - 23, 2007, T IEEE InternationalWorkshop and Tutorials on Microtechnolo-gies in Electronics Location: Novosibirsk StateTechnical University, Novosibirsk, Russia Contact:Alexander Gridchin E-Mail: [email protected]: 8/20/07 www: Not Available

December 29 - 31, 2007, T International Con-ference on Microelectronics Location: NileHilton, Cairo, Egypt Contact: Mohab Anis E-Mail:[email protected] Deadline: 6/15/07 www:www.ieee-icm.com

January 22 - 24, 2008, T IEEE Radio and Wire-less Symposium Location: Long Beach Conven-tion Center, Orlando, FL, USA Contact: Tom WellerE-Mail: [email protected] Deadline: Not Availablewww: http://www.radiowireless.org

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- by Anisul HaqueProf. Hiroshi Iwai, Tokyo Institute ofTechnology, and EDS DistinguishedLecturer, visited the Bangladesh Chap-ter December 19-23, 2006. He formallyinaugurated the ED Bangladesh Chap-ter on December 19th at the East WestUniversity, Dhaka. Prof. M. AtaulKarim, Vice President for Research,Old Dominion University, USA, wasalso present at the inaugural ceremo-ny as the special guest. Prof. Moham-mad Musa, Vice Chancellor (Acting),East West University, chaired the pro-gram and Prof. Anisul Haque, Chair,ED Bangladesh Chapter, delivered thewelcome address. The program wasattended by more than 100 partici-pants including around 15 EDS mem-bers and 20 IEEE student members.

Prof. Iwai also presented a technicaltalk on Electronic Devices for HumanSociety after the inaugural. The talkgenerated a lot of interest, particularlyamong the EDS and student members.

Prof. Iwai attended the 4th Interna-tional Conference on Electrical andComputer Engineering (ICECE 2006)held in Dhaka, December 19–21. Hepresented a key note talk on Decem-ber 21st. The title of his talk was NanoCMOS Technology and Manufactur-ing and his presentation was followedby an exciting question and answersession.

Prof. Iwai visited the BangladeshUniversity of Engineering & Technolo-gy (BUET) on December 20th . He metProf. S. P. Majumder, Head, EEEDepartment, who showed him around

the various labs and resources of thedepartment. Prof. Iwai was also intro-duced to Prof. A. M. M. Saifullah, ViceChancellor, BUET. They discussed apossible collaboration betweenBangladeshi and Japanese universi-ties in the electron device area.

Guests at the inaugural ceremony of the ED Bangladesh Chapter on December 19, 2006

Prof. Iwai delivering his talk at the inauguralceremony of the ED Bangladesh Chapter

on December 19, 2006

Prof. Iwai’s visit to BUET on December 20, 2006. From leftto right: Prof. A. B. M. Harun Ur-Rashid, Secretary/Treasurer,ED Bangladesh, Prof. Anisul Haque, Chair, ED Bangladesh,

Prof. Hiroshi Iwai, Prof. Satya Prasad Majumder, Head, EEE,BUET, and Prof. A. M. M. Safiullah, Vice Chancellor, BUET

Report on Prof. Hiroshi Iwai’s visit

to the ED Bangladesh Chapter

Report on Prof. Hiroshi Iwai’s visit

to the ED Bangladesh Chapter

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Documents

Table of Contents 2007 IEEE International SOI Conference...IEEE Electron Devices Society Newsletter(ISSN 1074 1879) is published quarterly by the Electron Devices Society of the Institute