LECTRON EVICES OCIETY IEEE ELECTRON DEVICES ......IEEE Electron Devices Society Newsletter(ISSN 1074 1879) is published quarterly by the Electron Devices Society of the Institute of

IEEE ELECTRON DEVICES SOCIETY IEEE ELECTRON DEVICES SOCIETY IEEE ELECTRON DEVICES SOCIETY EDS

LECTRONEVICESOCIETY

July 2004 Vol. 11, No. 3 ISSN:1074 1879 Editor-in-Chief: Ninoslav D. Stojadinovic

Your Comments SolicitedYour comments are most welcome. Please writedirectly to the Editor-in-Chief of the Newsletter at

[email protected]

The 30th Annual IEEE International SOI Conference, the premier confer-ence dedicated to current trends in Silicon-on-Insulator technology, will beheld October 4 – 7, 2004 at the Francis Marion Hotel, Charleston, SouthCarolina. A one-day Tutorial Short Course will precede the conference onMonday, 4 October.

The SOI conference was established with the support of IEEE to pro-vide a forum for open discussion in all areas of silicon-on-insulator tech-nologies and their applications. Ever increasing demand andmodifications in this technology bring the industry together to discussnew accomplishments and gains. Original papers presenting new devel-opments in the industry will be presented at the conference.

The 2004 SOI International Conference will begin with a half-day ple-nary session followed by two days of oral sessions, a poster session anda late news session. A Best Paper Award will be presented at the closingon Thursday. Session topics will focus on basic materials research,device research, circuit development (special and improved) and applica-tions and uses. Rump sessions will be held on Wednesday evening,October 6. These sessions encourage attendees to share their opinionsand expertise on the chosen topics of discussion.

Additionally, a materials and equipment exhibition relating to SOItechnology will be held concurrently with the conference. Participantswill have the opportunity to visit the exhibit area to see what’s new inSOI. Overall, the 2004 SOI International Conference offers attendees abroad spectrum of information, opportunities for discussion with one’speers, and is a must for engineers with direct involvement or partialinvolvement in SOI.

The 2004 SOI Conference seeks papers on a wide range of SOI tech-nology including:

Table of ContentsUpcoming Technical Meetings...................1

• 2004 SOI • 2004 BCTM• 2004 NVSMW • 2004 IRW

Message from the EDS President.....................3Message from the EDS Newsletter

Editor-in-Chief ...........................................3

Society News......................................................8• Announcement of Newly Elected EDS

AdCom Members • EDS Administrative Committee Election

Process • Call for Nominations – EDS AdCom• Call for EDS Chapter Subsidies for 2005• EDS Standing Committee Reports –

Regions/Chapters and Membership• EDS Technical Committee Reports –

Photovoltaic Devices and VLSI Technologyand Circuits

• Compound Semiconductor Roadmap• Congratulations to the EDS Members Elected

to the National Academy of Engineering (NAE) • Status Report from the 2003 EDS Graduate

Student Fellowship Winners• Congratulations to the EDS Members Recently

Elected to IEEE Senior Member Grade• Call for Nominations for the EDS Chapter of

the Year Award• IEDM Short Courses on Videotape

Regional & Chapter News ...........................17

EDS Meetings Calendar ...............................27

EDS Distinguished Lecturer/Chapter Partner Visits South Africa .................28

continued on page 6

2004 IEEE International

SOI Conference (SOI)

2004 IEEE International

SOI Conference (SOI)

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2 IEEE Electron Devices Society Newsletter m July 2004

PresidentHiroshi IwaiTokyo Institute of TechnologyE-Mail: [email protected]

President-ElectIlesanmi AdesidaUniversity of IllinoisE-Mail: [email protected]

TreasurerPaul K. L. YuUniversity of California at San DiegoE-Mail: [email protected]

SecretaryJohn K. LowellConsultantE-Mail: [email protected]

Jr. Past PresidentSteven J. HilleniusAgere SystemsE-Mail: [email protected]

Sr. Past PresidentCary Y. YangSanta Clara UniversityE-Mail: [email protected]

VP of Awards Alfred U. Mac RaeMac Rae TechnologiesE-Mail: [email protected]

VP of Educational Activities Ilesanmi AdesidaUniversity of IllinoisE-Mail: [email protected]

VP of Meetings Kenneth F. GallowayVanderbilt UniversityE-Mail: [email protected]

VP of Membership James B. KuoNational Taiwan UniversityE-Mail: [email protected]

VP of Publications Renuka P. JindalUniversity of Louisiana at LafayetteE-Mail: [email protected]

VP of Regions/Chapters Cor L. ClaeysIMECE-Mail: [email protected]

VP of Technical ActivitiesMark E. LawUniversity of FloridaE-Mail: [email protected]

IEEE NewslettersPaul DotoIEEE Operations CenterE-Mail: [email protected]

Executive DirectorWilliam F. Van Der VortIEEE Operations CenterE-Mail: [email protected]

Business AdministratorChristopher SaliccoIEEE Operations CenterEmail: [email protected]

IEEE Electron Devices Society Newsletter (ISSN 1074 1879) is published quarterly by the Electron Devices Society of the Institute of Electrical and ElectronicsEngineers, Inc. Headquarters: 3 Park Avenue, 17th Floor, New York, NY 10016-5997. Printed in the U.S.A. One dollar ($1.00) per member per year is included inthe Society fee for each member of the Electron Devices Society. Periodicals postage paid at New York, NY and at additional mailing offices. Postmaster: Sendaddress changes to IEEE Electron Devices Society Newsletter, IEEE, 445 Hoes Lane, P.O. Box 1331, Piscataway, NJ 08855-1331.

Copyright © 2004 by IEEE: Information contained in this Newsletter may be copied without permission provided that copies are not used or distributed fordirect commercial advantage, and the title of the publication and its date appear on each photocopy.

EDS AdComElected Members-at-Large

(Elected for a three-year term (maximum two terms) with ‘full’ voting privileges)

2004 Term 2005 Term 2006 Term

M. Estrada del Cueto (1) C.L. Claeys (2) S.S. Chung (1)K. F. Galloway (2) J.A. Dayton, Jr. (2) T. Hiramoto (2)S. J. Hillenius (2) M. Fukuma (2) L.M. Lunardi (2)C. Jagadish (2) F.J. Garcia-Sanchez (1) M. Lundstrom (1)J. K. O. Sin (1) K. Lee (2) A. Wang (1)R. Singh (2) J.J. Liou (1) H.S.P. Wong (2)N.D. Stojadinovic (1) M. Ostling (2) X. Zhou (1)

D.L. Pulfrey (2)

ELECTRON DEVICES

SOCIETY

ELECTRON DEVICES

SOCIETY

CONTRIBUTIONS WELCOMECONTRIBUTIONS WELCOME

Readers are encouraged to submit news items concerning the Societyand its members. Please send your ideas/articles directly to either the Edi-tor-in-Chief or appropriate Editor. The e-mail addresses of these individu-als are listed on this page. Whenever possible, e-mail is the preferredform of submission.

Newsletter DeadlinesIssue Due Date

January October 1stApril January 1stJuly April 1stOctober July 1st

REGIONS 1-6, 7 & 9Eastern, Northeastern & South-eastern USA (Regions 1, 2 & 3)Murty S. PolavarapuBAE SystemsE-Mail: [email protected]

Central USA & Canada (Regions 4& 7)Arokia NathanUniversity of WaterlooE-Mail: [email protected]

Southwestern & Western USA (Regions 5 & 6)Sunit TyagiIntelE-Mail: [email protected]

Latin America (Region 9)Adelmo Ortiz-CondeUniversidad Simon BolivarE-Mail: [email protected]

REGION 8Eastern Europe & The FormerSoviet UnionAlexander V. GridchinNovosibirsk State Technical Uni-versityE-mail: [email protected]

Scandinavia & Central EuropeAndrzej NapieralskiTechnical University of LodzE-Mail: [email protected]

UK, Middle East & AfricaGady GolanThe Open UniversityE-Mail: [email protected]

Western EuropeCora SalmUniversity of TwenteE-Mail: [email protected]

REGION 10Australia, New Zealand & SouthAsiaXing ZhouNanyang Technological UniversityE-Mail: [email protected]

Northeast AsiaHisayo Sasaki MomoseToshiba CorporationE-Mail:[email protected]

East AsiaHei WongCity University of Hong KongE-Mail: [email protected]

Editor-In-Chief

Ninoslav D. StojadinovicUniversity of NisE-Mail: [email protected]

NEWSLETTER

EDITORIAL STAFF

NEWSLETTER

EDITORIAL STAFF

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July 2004 m IEEE Electron Devices Society Newsletter 3

Message from the EDS PresidentMessage from the EDS PresidentAs the first Presi-dent elected from aregion outside theU.S., it is a greathonor and privilegeto serve as thePresident of theElectron DevicesSociety. My term isstarting at a time

when the globalization activities of theSociety are extremely intense and alsowhen the financial situation of the Soci-ety has started to recover, thanks to thegreat effort of the Society members.

The importance of Electron Devicesfor the world is increasing more thanever, as it has played an indispensablerole for providing us with intelligentservices through the recent tremen-dous progress made by ElectronDevices, including the internet, cellularphones, digital electronic appliances,video game machines, GPS naviga-tions and industrial and entertainmentrobots. In the near future, ElectronDevices are expected to contributemore significantly by substitutingsome of our intelligent labors with ahuman’s sensitivity and machine accu-racy. For example, automatic simulta-neous interpretation, automatic elderlycare, and automatic surgery opera-tions could be realized in 20 years. Weare proud that our Society is partici-pating in such important activities insuch an exciting period, and we wishto contribute to the progress of Elec-tron Devices as much as we can.

At the February IEEE TAB Meeting

series, we held the second EDS strate-gic planning meeting to discuss howthe Society can better serve the cur-rent members and attract futurepotential members. In order for EDS tobe more flexible in its ability torespond quickly to technical shifts inthe community and to allow the tech-nical committees to have more lever-age in influencing the Society’sdirections, we will make the Technicaland Meetings committees create con-crete action items and discuss them atthe coming 2004 May AdCom Meetingseries. Although there are an enor-mous number of industrial people inthe world participating in ElectronDevices development, manufacturing,and application, only a small portionof these individuals are members ofthe Society. To promote the participa-tion of industrial people, the IndustrialRelations Adhoc Committee wasfounded and is working on a plan ofaction. Education is another importantrole of the Society, and the Distin-guished Lecturer (DL) Program is oneof the most attractive programs for themembers. We are planning to enhancethe DL Program by significantlyincreasing the number of lecturers,increasing the DL budget and having astrong collaboration between the Edu-cational Activities and theRegions/Chapters committees. Thenumber of Electron Devices engineersand scientists are increasing veryrapidly in the non-US Regions such asAsia. In order to take advantage of theopportunity, the Regions/Chapters and

the Membership committees will worktogether to promote membership.

We are planning to make EDSmembership more useful and attrac-tive to the members. It is planned thatan archival DVD set, which will includeall issues and years of Transactions onElectron Devices (T-ED), and ElectronDevice Letters (EDL), and all publisheddigests of the International ElectronDevices Meeting (IEDM), will be madeavailable to our members in Decemberat the IEDM for a very reasonableprice. EDS plans to work closely withits flagship conference, the IEDM, toencourage and increase the studentand industry participation for both theIEDM and EDS. We recognize that allthe activities of the Society are accom-plished by the devotion of the volun-teers of the Society; and as a result,EDS plans to increase the number ofcertificates of appreciation it issues toits contributors. These proposals willbe further discussed at the May 2004EDS AdCom Series and we will estab-lish a schedule for implementation.

I will report back to the member-ship on the progress of the Societygoals in future communications. Iwould like to encourage you all tothink about ways that we canenhance these programs and let meknow how the Society can betterserve you each individually.

Hiroshi IwaiEDS President

Tokyo Institute of TechnologyYokohama, Japan

Hiroshi Iwai

After six years of distinguished service,Prof. Christian Zardini has departedfrom the Editorial Board this year. I amtaking this opportunity to thank Christ-ian for his dedicated service to theNewsletter as a Region 8 Editor.Replacing Prof. Zardini is Dr. CoraSalm from the University of Twente,The Netherlands, whose biographyfollows. Cora has a lot of experience inEDS related activities, and it is mypleasure to welcome her as the newRegion 8 Newsletter Editor for West-ern Europe.

Cora Salm received M.Sc. degree

in applied physicsin 1993, and Ph.D.degree in electricalengineering in1997, both fromthe University ofTwente. She is cur-rently an AssistantProfessor at theMESA Research

Institute, University of Twente. Herpast research interests include electri-cal characterization of deep-submi-cron MOS devices, integration ofpoly-SiGe in existing process flow,

and polycrystalline GeSi for advancedCMOS technologies. Her recentresearch mainly focuses on reliabil-ity issues of advanced semiconduc-tor devices, such as gate-dielectricintegrity, stresses in metallizationfilms, and electrostatic discharge.Dr. Salm is a Member of IEEE and areviewer for IEEE Electron DeviceLetters.

Ninoslav D. StojadinovicEDS Newsletter Editor-in-Chief

University of NisSertbia and Montengro

Message from the Editor-in-Chief

Cora Salm

Message from the Editor-in-Chief

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Upcoming Technical MeetingsUpcoming Technical Meetings

The 2004 IEEE Non-VolatileSemiconductor Memory Work-shop (NVSMW) wil l be heldAugust 22 - 26, 2004 in Mon-terey, California. The IEEE Elec-tron Devices Society sponsorsthe workshop. NVSMW is aunique forum for both special-ists in all aspects of nonvolatilememory microelectronics andnovices wanting to gain a broad-er understanding of the field.Attendees represent profession-al and academic researchersinvolved with semiconductornon-volatile memory develop-ment and production along withend users of memory products.Principal topics for discussion atNVSMW are: device physics; siliconprocessing; product testing; newtechnologies, including multi-level-cell approaches; programmable log-ic; memory cell design; integratedcircuits; solid state disks and memo-ry cards; memory reliability; andnew applications.

An important goal of NVSMW isto provide an informal environmentto encourage discussions amongparticipants and lively interactions.There will be morning and after-noon technical sessions, along witha lively evening panel discussion ona hot topic in the nonvolatile memo-ry f ield. Technical interact ionamong presenters and attendees isencouraged through question andanswer sessions and allotting ampletime after the formal paper presen-tations for further in-depth discus-sions. Organized breaks, includingsnacks and the workshop dinnerand lunch are provided as opportu-nities to meet and exchange ideaswith colleagues. Breakfasts are alsoprovided. The morning and after-noon technical sessions are orga-nized in a manner to provide ampletime for the informal exchange andto enjoy the beauty of the Montereypeninsula region of California.

This year will be the 20th meet-

ing of NVSMW. The workshop isheld every 18 months, alternatingbetween February and August. TheFebruary meeting is usually heldthe week after ISSCC. The 2004meeting will be held in the fourthweek of August. Early workshopsalternated between Monterey, Cali-fornia for the February meeting andVail, Colorado for the August meet-ing. The Vail venue was dropped anumber of years ago, to facilitateattendance and travel f rom thenearby Silicon Valley. For manyyears, the attendance for the work-shop was around 100. In recentyears, however, the attendance hasgrown considerably, reflecting thelarge growth in the Non-volatilememory market, particularly flashmemory and embedded memory onlogic cores, with the attendance atthe last several workshops beingwell in excess of 200. In order tomaintain the workshop atmosphereof the forum, the maximum atten-dance is limited to 300. Therefore,advance registration is highly rec-ommended. A wide internationalcommunity attends NVSMW fromNorth America, Europe, Japan andother Asian countries. The past sev-eral workshops have had featuredsessions to address the growth ofsegments of the memory market.

The last workshop, in 2003,featured the keynote speech pre-sented by Dr. Herman Maes ofIMEC, on Silicon Scaling and ItsConsequences for Memory Tech-nology. There were two invitedpapers. One of the invited papersby Al Fazio of Intel discussed theTechnology and Appl icat ionsrelated to 0.13um Logic + Flash.Another invi ted paper by Dr .Josef Wi l ler of Ingent ix d is -cussed recent developments ofNi t r ide-Storage Memories . Athird invited paper, presented byRadu Andrei of Web feetResearch, discussed a competi-t ive assessment of Advanced

Nonvolatile technologies, as com-pared to convent ional F loat ingGate NVM technologies. There wasa panel discussion, moderated byAlan Niebel of Web feet Research,which examined packaging andtest developments for System-In-Package Technologies. In addition,there were paper sessions onDesign and Applications of NVM,Nitride Storage technologies, Relia-bility, Integration & Characteriza-t ion of NVM, and Al ternat iveMemory technologies.

For this year’s workshop, thedeadline for submitting abstracts tothe Technical Chairman was April26, 2004. Proceedings consisting ofbound copies of all abstracts will behanded out to attendees at the con-ference, along with a list of atten-dees and their phone numbers ande-mail addresses to allow futurecontact of workshop colleagues. It isanticipated that the format of the2004 workshop will be similar tothat of the past years, with anexpected 30-40 technical paper pre-sentations. The last workshop con-sisted of six technical sessions overa three-day period. The workshopopened with a Sunday evening reg-istration reception, consisting ofdrinks and hors d’oeuvres. Break-fast opened each day, while a work-

2004 IEEE Non-Volatile Semiconductor

Memory Workshop (NVSMW)

2004 IEEE Non-Volatile Semiconductor

Memory Workshop (NVSMW)

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shop reception dinner and eveningpanel discussion closed out Tuesdayevening. The workshop formallyclosed on Wednesday afternoon.Breakfast was also provided onThursday morning, for thoseremaining in the Monterey area.

The 2004 NVSMW will be held atthe Hyatt Regency in Monterey, Cali-fornia. The hotel is conveniently situ-ated in the Monterey peninsula andallows fast access to many sights.Among favorite destinations are: thefamous Fisherman’s Wharf, CanneryRow, The Monterey Bay Aquarium,17-Mile Drive, nearby Carmel and themany tranquil sights of natural beau-

ty of the Monterey coastline and thefine dining experiences of the area.The Hyatt Regency is located at: OneOld Golf Course Road, Monterey,California. The hotel can be reachedby TEL: (831) 372-1234.

For registration information andgeneral inquiries about NVSMW,please contact any of the workshopchairmen. General Chairman: KellyBaker, Motorola, Inc., Mail DropOE341, 6501 William Cannon Dr.West, Austin, TX 78735, USA, Phone:(512)-895-8335, Fax: (512)-895-8605, E-mail: [email protected];Technical Chairman: Andrei Mihnea,M/S 306, Micron Technology, Inc.,

8000 S. Federal Way, P.O. Box 6,Boise, ID 83707, Phone: (208) 363-1330, FAX: (208) 363-2919, E-mail:[email protected]. Finance Chair-man: Dr. Stephen Keeney, M/S RN3-01, Intel, 2200 Mission College Blvd.,Santa Clara, CA 95054, USA, Phone:408-765-0128, Fax: 408-765-5775, E-mail: [email protected].

You can also visit the NVSMW website for up-to-date information at:http://ewh.ieee.org/soc/eds/nvsmw

Kelly BakerNVSMW General Chair

Motorola, Inc.Austin, TX, USA

Wireless communications is aburgeoning market area and amajor driver behind the semi-conductor industry, and SiGeBiCMOS and III-V technologieshave emerged as the manufac-turing processes of choice formany wireless ICs. If you workor are interested in this excit-ing area, then the 2004 IEEEBipolar/BiCMOS Circuits and Tech-nology Meeting (IEEE BCTM) is aconference you want to attend. The2004 IEEE BCTM will be held at theLe Centre Sheraton Hotel in Montre-al, Quebec, Canada from 12 to 15,September 2004.

IEEE BCTM has historically beenheld in Minneapolis, MN. However,due to popular demand, the confer-ence is now on the road, whichstarted in 2002 in Monterey, CA, in2003, in Toulouse, France, and backto North America in 2004. Historical-ly, Canada has been a stronghold ofbipolar research and development,

in manufacturing technologies andcircuits, both in industry and acade-mic institutions.

Montreal is one of the world’s mostdynamic metropolises, characterizedby its distinctive “joie de vivre”, enter-tainment, recreation, and gastronomy.Boasting a rich history, Montreal isunique in North America for its spe-cial blend of urban modernism anddiscreet charm inspired by the culturaldistinctiveness of Quebec.

The technical program for IEEEBCTM consists of one day of shortcourses given by noted experts, fol-lowed by two days of invited and

contributed technical presenta-tions in the areas of RF, devicephysics, process technology,modeling, analog, and powerdevices. In addition, a specialsession will be held on emerg-ing technologies. A workshopon Compact Modeling will beheld the day following the con-ference. There will be exhibits

from vendors with products of inter-est to those working in thebipolar/BiCMOS area. To comple-ment the technical conference, therewill be an exciting social program inthe heart of Montreal.

For registration and other informa-tion, please visit the IEEE BCTM homepage: http://www.ieee-bctm.org

We hope you will join the IEEE BCTMWorld Tour. See you in Montreal!

Ross TeggatzBCTM General Chair

Texas InstrumentsDallas, TX, USA

2004 IEEE Bipolar/BiCMOS Circuits and

Technology Meeting (BCTM)

2004 IEEE Bipolar/BiCMOS Circuits and

Technology Meeting (BCTM)

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• SOI material science/modification,material characterization, and manu-facture

• SOI device Physics and modeling• SOI circuit applications (high-perfor-

mance microprocessors, srams,asic, low power, high-voltage, rf,analog, Mixed mode, etc.)

• Double Gate/Vertical Channel Struc-tures; Other Novel Structures

• Strained Si-Ge structures • New SOI structures, Circuits, and

applications (3d integration, dis-plays, microactuators - MEMS,microsensors, Drop-in RAMS, etc.)

• SOI reliability issues (hot-carriereffects, radiation effects, high-tem-perature effects, etc.)

• Manufacturability and process inte-gration of SOI devices and circuits

• Alternate silicon-on-insulator material. Abstracts for the 2004 SOI Confer-

ence were due no later than May 7,2004 to: BACM, by e-mail ONLY [email protected] in PDF for-mat. Late newspapers with exception-al merit will be considered for the LateNews session if submitted on orbefore August 15, 2004.

Once again, the popular One-DayTutorial Short Course will be offeredpreceding the 2004 SOI InternationalConference. Tutorial Short Courseinstructors have many years of experi-ence in the field of silicon-on-insulatortechnology. The course is intended toeducate attendees in detail about cur-rent trends and issues in the SOI indus-try. The 2004 SOI Tutorial Short Coursewill focus on future trends in SOI tech-nologies including such topics as novelSOI devices and strained silicon oninsulator. Participants will receivecopies of all visual presentations.

The SOI Conference is held annu-ally throughout the United States.An advisory board and a technicalcommittee, comprised of membersfrom the society throughout theworld, guide the conference. The2004 advisory board members areDimitris Ioannou (George Mason U),Harold Hovel (IBM), Mike Liu (Hon-eywell), and Ted Houston (TI). The2004 conference is organized by:General Chair , Mike Mendicino(Motorola), Technical Program Chair,James Burns (MIT/Lincoln Lab);Local Arrangements Chair ,Christophe Tretz (IBM E&TS); Trea-surer and Registration Chair, ToshiroHiramoto (University of Tokyo);Rump and Poster Chair, Mario Pelel-la (AMD); and Short Course Chair,Pierre Fazan (LEG/EPFL); and techni-cal committee members, RichardBrown (U. Michigan), Jean-PierreColinge (UC Davis), Paul Fechner(Honeywell), Samuel Fung (TSMC),Keith Jenkins ( IBM Research),Wil l iam Jenkins (NRL), ShigeruKawanaka (Toshiba), James Kuo(National Taiwan Univ.) , HectorSanchez (Motorola), Sunit Tyagi(Intel), Rene Zingg (Phillips), GerryNeudeck (Purdue), Atsushi Ogura(NEC), and Carlos Mazure (SOITEC).

Charleston has made manychanges through the last 300 yearsand presents many faces to the visitorof today. There was the CharlesTowne of the 18th century, a wealthygrowing city, Charleston of the 19thcentury during the rise and fall ofSouthern aristocracy before the Amer-ican Civil War and the upheaval afterthe war ended. Like no other city,Charleston has been described, as a

“living museum”, since parts of thecity appear frozen in time.

Despite its emphasis on preserva-tion, Charleston is also a modern citythat nurtures theater, dance, music,and visual arts. There is fishing, golfand tennis, beautiful beaches, andisland getaways, and a virtual pletho-ra of restaurants & bistros featuringtraditional as well as modern adapta-tions of “Southern food”. Charlestonis also a gracious 300 year old portcity and living historical site that payshomage to its past, celebrates its pre-sent and moves gracefully into thefuture.

Opened in 1924, The Francis Mari-on Hotel is the largest and grandest inthe Carolinas. Rising 12 stories abovethe historic district, many of theHotel’s guestrooms offer spectacularviews of Charleston’s church steeples,antebellum mansions and famous har-bor. Located downtown on historicMarion Square, the magnificent gar-dens, house museums, antique shops,local boutiques, restaurants andnightlife that make Charleston unique,are all an easy walk from our confer-ence hotel.

You may contact the 2004 IEEEInternational SOI Conference for addi-tional information as follows: c/oBACM, 520 Washington Blvd., #350,Marina del Rey, CA 90292, Tel: 310-305-7885; Fax: 310-305-1038; Email:[email protected] or the SOI Confer-ence website at http://www.soiconfer-ence.org.

Michael LiuSOI General Chair

Honeywell SSEDPlymouth, MN, USA

2004 IEEE International SOI Conférence (SOI)2004 IEEE International SOI Conférence (SOI)(continued from page 1)

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The Integrated Reliabili-ty Workshop focuses onensuring semiconductorreliability through compo-nent fabrication, design,characterization, and analy-sis tools, as well as identifi-cation of root cause defectsand physical mechanismsresponsible for reliabilityproblems. I t provides aunique environment forunderstanding, developing,and sharing reliability tech-nology for present and future semi-conductor applications.

Last year’s 2003 IRW discussedall aspects of technology reliabilityand many aspects of product relia-bi l i ty in an informal workshopatmosphere through platform paperpresentations, in-depth tutorials,poster sessions, early evening work-shops, and the very popular lateevening special interest groups.CMOS and BIPOLAR device reliabili-ty was discussed both in bulk andSOI. In the ever-challenging quest toshrink gate dielectric thicknesses,both conventional SiO2 and high-Kdielectric gates were contrasted. Ahigh-K tutorial as well as a discus-sion group on this topic ensures itagain will be hot in 2004. CMOSdevice topics included both negativeand positive bias temperature insta-bilities (NBTI, PBTI). An entire ses-sion was devoted to BIPOLAR issueswhich included state of the art bandgap engineered Si-Ge BiCMOS.Interconnect fuse and MIMCAPissues were also covered in thecourse of the papers. Non-contactmeasurement techniques were pre-sented in a tutorial and discussedfurther by additional authors in thecourse of the paper presentations.Two other tutorials included a com-prehensive discussion of fast waferlevel monitoring for product wafersin manufacturing and a forward

looking tutorial giving an update onthe status of Magnetic RAMs andtheir reliability issues.

In 2004 IRW plans to build uponlast year’s success.

Our Keynote speaker is alreadychosen, and he will both inspire andchallenge us with his openingaddress. Here is the informationabout this talk:

Keynote Speaker: Timothy Forhan,Senior VP Corporate Reliability, AMISemiconductor.

“Managing Tomorrow’s ReliabilityRisks Today”

“In today’s world, semiconductorICs control mission critical functions inairplanes and pacemakers to nuclearreactors and ABS brakes. Big cus-tomers use multiple millions of a singlepart number and easily differentiate 3-ppm performance from .7ppm perfor-mance. So, the importance of qualityand reliability in our products has nev-er been higher… I hope to share someof our thinking, strategy and results inthis area and hopefully set the stage fora healthy exchange on managingtomorrow’s risks today. “

In addition, we have planned anexciting venue of Tutorials. They are:• Gate Dielectric Reliability• Device Reliability• Interconnect Reliability • Negative Bias Temperature Insta-

bility (NBTI) • Cu-Metallization Reliability

• Product ReliabilityThe deadline for abstract

submissions was June 18,2004 and the Technical Pro-gram Chair is Rolf-PeterVollertsen, Rolf.Vollert-sen@infineon. com. Thecategories for the papersfor this year’s platform andposter presentations sub-missions are:• Wafer level reliability

tests and test approaches• Identification of new

reliability effects & characterization • Reliability models and simulations• Reliability test structures• Customer product reliability require-

ments/ manufacturer reliability tasks• Designing-in reliability (circuits,

processes, products)For the interested reader, or first-

time participant, please go to the IRWwebsite and download the full call forpapers: http://www.irps/irw

Finally, a brief checklist for yourconsideration and investigating IRW2004 further:

When: October 18-21 2004Where: Stanford Sierra Camp,

South Lake Tahoe, CATechnical Program Chair: Rolf-

Peter Vollertsen, Infineon Technolo-gies, [email protected]

Abstract submission deadline:June 18,2004

General Chair: Al Strong, IBM Tech-nology Reliability [email protected]

Web Site: http://www.irps.orgWhether you are interested in pre-

senting a paper, or interested insharpening your skills through thewonderful interaction that takesplace at IRW, we are looking forwardto meeting you at the conference!

Alvin StrongIRW General Chair

IBM Technology ReliabilityEssex Junction, VT, USA

2004 IEEE International Integrated

Reliability Workshop (IRW)

2004 IEEE International Integrated

Reliability Workshop (IRW)

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Society NewsSociety News

On December 7, 2003, the EDSAdCom held its annual election of offi-cers and members-at-large. The fol-lowing are the results of the electionand brief biographies of the individu-als elected.

I. OFFICERSThe following individuals were electedas officers beginning 1/1/2004:

HIROSHI IWAI(President, with atwo-year term) is aprofessor of Fron-tier CollaborativeResearch Center,Tokyo Institute ofTechnology (TIT).Before joining TIT,

he worked at Toshiba Corporation for 26years, having developed advanced Sidevice technologies. He was also a visit-ing scholar at Stanford in 1983 and 84.He received the B.E. and Ph.D. degreesin electrical engineering from the Uni-versity of Tokyo, Japan in 1972 and1992, respectively.

He is currently the EDS Regions/Chapters Committee Chair. He hasserved for many years with IEEE/EDS,as an Elected AdCom member, an edi-tor of the EDS Newsletter, and thechair of a number of EDS conferences.

I L E S A N M IADESIDA (Presi-dent-Elect, with atwo-year term)received his Ph.D.in electrical engi-neering from theUniversity of Cali-fornia, Berkeley, in

1979. From 1979 to 1984, he worked inat Cornell University. He was theHead of the Electrical EngineeringDepartment at Tafawa Balewa Uni-versity, Bauchi, Nigeria, from 1985to 1987. In 1987, he joined the Uni-versity of Illinois at Urbana-Cham-paign, where he is currently theDonald Biggar Willet Professor ofEngineering and the Director of theMicro and Nanotechnology Labora-tory. He was on the EDS Administra-

tive Committee and Chaired the EDSEducation Activities Committee. Hehas served on the organizing com-mittees of various international con-ferences and served as an AssociateEditor of the Journal of ElectronicMaterials. He was awarded the Oak-ley-Kunde Award for Excellence inUndergraduate Education in 1994,named a University Scholar in 1997,and became an Associate Memberof the Center for Advanced Study atthe University of Illinois in 1999. Heis a Fellow of IEEE and AAAS.

PAUL K.L. YU(Treasurer, with aone-year term)received his Ph.D.from the CaliforniaInstitute of Tech-nology in 1983.That same year, hejoined the faculty

of the Department of Electrical andComputer Engineering at the Univer-sity of California at San Diego(UCSD) where he has been a pro-fessor s ince 1993. At UCSD, heconducts research in materials anddevice for fiber optics and opto-electronics applications. He is aSenior Member of IEEE, a Distin-guished Lecturer of the EDS and amember of OSA. Current ly , hisresearch focus is in solving prob-lems for microwave photonics sys-tems. He has published more than100 papers in the area of photonics.

JOHN K. LOWELL(Secretary, with aone-year term)received the Ph.D.degree in AppliedPhysics from theUniversity of Lon-don. He has heldtechnical and man-

agerial assignments for United Tech-nologies, Northern Telecom, Mostek,Texas Instruments, BritishTelecom/Dupont, AMD, Applied Materi-als, Oracle and most recently PDF Solu-tions. He has also been a Professor atTexas Tech University and in the Uni-

versity of Texas system, and held Con-sulting Professorships at other universi-ties in addition to being a VisitingScholar at the NSF Center for the Syn-thesis, Growth and Characterization ofElectronic Materials at the University ofTexas at Austin.

Dr. Lowell is a Senior Member of theIEEE, a Distinguished Lecturer of theEDS and has held AdCom-level posi-tions previously within the LEO andCAS societies. For fifteen years, he wasalso the Associate Editor-in-Chief of theIEEE Division I Circuits & Devices Mag-azine, and was its Guest Editor twice.

II. ADCOM MEMBERS-AT-LARGEA total of seven persons were electedto three-year terms (2004-2006) asmembers-at-large of the EDS AdCom.Three of the seven individuals were re-elected for a second term, while theother four were first-time electees. Thebackgrounds of the electees span awide range of professional and techni-cal interests.

A. SECOND TERM ELECTEES:

T O S H I R OH I R A M O T Oreceived B.S., M.S.,and Ph.D degrees inelectronic engi-neering from theUniversi ty ofTokyo in 1984,1986, and 1989,

respectively. In 1989, he joined theDevice Development Center, HitachiLtd., Ome, Japan, where he wasengaged in the device and circuit designof ultra-fast BiCMOS SRAMs. In 1994, hejoined the Institute of Industrial Science,University of Tokyo, Japan, where hehas been a Professor since 2002. Hisresearch interests include low powerand low voltage design of advancedCMOS devices, SOI MOSFETs,device/circuit cooperation scheme forlow power VLSI, quantum effects innano-scale MOSFETs, and silicon singleelectron transistors. He served as theGeneral Chair of Silicon Nanoelectron-ics Workshop in 2003, and the ProgramChair in 1997, 1999, and 2001.

Announcement of Newly Elected AdCom MembersAnnouncement of Newly Elected AdCom Members

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LEDA LUNARDIholds a Ph.D. inelectrical engineer-ing from CornellUniversity. From1985 to 2000, shewas with AT&T BellLabs, in New Jer-sey, where her

research was in high-speed devices forlight wave systems. From 2000-2003,she was with JDS Uniphase.

Since 2003, she has been a professorat the Department of Electrical and Com-puter Engineering, North Carolina StateUniversity, Raleigh with research inter-ests in nanotechnology and photonicdevices for communication systems.

Dr. Lunardi is an IEEE Fellow andco-recipient of the 2000 LEOS Engi-neering Achievement Award She haspublished over 90 refereed papers andconference talks. Presently, she is theeditor of Optoelectronic Devices forIEEE Transactions on Electron Devices.

HON-SUM PHILIPWONG received thePh.D. degree in elec-trical engineeringfrom Lehigh Univer-sity, Pennsylvania,in 1988. He joinedthe IBM Thomas J.Watson Research

Center, Yorktown Heights, New York, in1988, as a Research Staff Member. He isnow Senior Manager of the NanoscaleMaterials, Processes, and DevicesDepartment. He has the responsibility ofshaping and implementing IBM’s strate-gy on nanoscale science and technolo-gy. Prior to this appointment, he wasSenior Manager of the ExploratoryDevices and Integration TechnologyDepartment. His department wasresponsible for defining and executingIBM’s exploratory devices and technolo-gy roadmap for silicon technology

He has worked on CCD’s, CMOSimage sensors, device modeling, dou-ble-gate FET, strained Si CMOS, ultra-thin body SOI, device applications ofwafer bonding, and most recently, GeFET, and carbon nanotube FET.

He is a Fellow of the IEEE and hasserved on both the IEDM committeeand ISSCC Program committee since1998. He is a member of the Emerg-ing Research Devices Working Groupof the International TechnologyRoadmap for Semiconductors (ITRS).

B. FIRST-TIME ELECTEES:

STEVE S. CHUNGreceived his Ph.D.degree from the Uni-versity of Illinois atUrbana-Champaign,in Electrical Engi-neering in 1985.

He is currently aProfessor and Chair-

man of EECS Undergraduate HonorsProgram and also a Professor with theElectronics Engineering Department atthe National Chiao Tung University. Inthe Fall Quarter of 2001, he was aResearch Visiting Scholar with StanfordUniversity. His current research areasinclude CMOS devices; flash memory,and reliability characterization and mod-eling; and nanoelectronics in bio applica-tions. He has published more than 130journal articles and conference papers,one undergraduate textbook, and holdsmore than 15 US and ROC patents.

Dr. Chung is a Senior member ofIEEE, DL of EDS, Editor of EDL andthe Chair of the ED Taipei Chapter. Hehas served on the committees ofmajor conferences, e.g., VLSI Tech-nology, IEDM, IRPS, etc. He has alsobeen the Technical Program Chair ofthe 2004 IPFA and EDMS. His chapterwas awarded the 2002 EDS Chapterof the Year Award and he receivedthe Outstanding Research Awardfrom the National Science Council,Taiwan several times. He was alsogranted Distinguished EE Professorand Engineering Professor by theEngineering Societies of Taiwan.

MARK S. LUND-STROM is the Donand Carol ScifresDistinguished Pro-fessor of Electricaland Computer Engi-neering at PurdueUniversity. Hereceived his B.E.E.

and M.S.E.E. degrees from the Universi-ty of Minnesota and then worked forHewlett-Packard on integrated circuitprocesses. After completing his Ph.D. onphotovoltaics at Purdue, he joined thefaculty in Electrical Engineering in 1980.His teaching and research currently cen-ter on the physics technology, and simu-lation of electronic devices. Lundstromis the founding director of the NSF fund-ed Network for Computational

Nanotechnology. He is an IEEE Fellowand a co-recipient of the 2002 CledoBrunetti Award for his work onnanoscale electronics.

ALBERT WANGreceived his B. Eng.and PhD degrees inEE from TsinghuaUniversity, Chinaand State Universi-ty of New York atBuffalo in 1985 and1996, respectively.

He was with National Semiconductoruntil 1998 when he joined the Facultyof ECE of Illinois Institute of Technolo-gy, where he is an Associate Professorand directs the Integrated ElectronicsLaboratory. His research interests cen-ter on analog/mixed-signal/RF ICs, on-chip ESD protection, IC CAD andmodeling, SoCs and semiconductordevices, etc. He received the NSFCAREER Award in 2002. He is theauthor of one book and more than sev-enty papers, and holds several U.S.patents. He is an Editor for the IEEEElectron Device Letters, an AssociateEditor for the IEEE Transactions on Cir-cuits and Systems I. He is an IEEE Dis-tinguished Lecturer for the ElectronDevices Society and the Solid-StateCircuits Society.

XING ZHOU re-ceived his B.E.degree in electricalengineering fromTsinghua Universityin 1983, M.S. andPh.D. degrees inelectrical engineer-ing from the Uni-

versity of Rochester in 1987 and 1990,respectively. He is currently an Associ-ate Professor in the School of Electricaland Electronic Engineering, NanyangTechnological University, Singapore.His past research interests includeMonte Carlo simulation of photo carri-er transport and ultra fast phenomenaas well as mixed-mode circuit simula-tion and CAD tool development. Hisrecent research mainly focuses onnanoscale CMOS technology anddevice compact modeling. He is aSenior Member of the IEEE, a memberof the EDS Compact Modeling andRegions/Chapters committees, an EDSNewsletter Editor for Region 10, and anEDS Distinguished Lecturer.

eds0704.qxd 5/18/04 1:44 PM Page 9


The Members-at-Large (MAL) of theEDS AdCom are elected for staggeredthree-year terms, with a maximum oftwo consecutive terms. The 1993 Con-stitution and Bylaws changes mandat-ed increasing the number of electedMAL from 18 to 22, and required thatthere be at least two members fromboth IEEE Region 8 (Europe, MiddleEast & Africa) and Region 10 (Asia &Pacific). In 2003, EDS made changes toits Constitution and Bylaws to requirethat at least one elected AdCom mem-ber is a Graduate of the Last Decade(GOLD member). A GOLD member isdefined by IEEE as a member whograduated with his/her first profession-al degree within the last ten years. It isalso required that there be at least 1.5candidates for each opening. From2001 to 2003, seven, eight and seven

positions were filled, respectively. In2004, seven positions will be filled.

The election procedure begins withthe announcement and Call For Nomi-nations in the EDS Newsletter. Theslate of nominees is developed by theEDS Nominations Committee andincludes the non-Committee andself-nominations received. Nomineesare asked to submit a two-page bio-graphical resume in a standard format.Nominations are closed on 15 Octo-ber, and the biographical resumes aredistributed to the ‘full’ voting mem-bers of AdCom prior to the DecemberAdCom meeting. The election is thenheld after the conclusion of the meet-ing. The nominees do not need toattend the AdCom Meeting/Election torun. On the other hand, if you areelected, you are expected to attend the

two AdCom meetings a year. In gener-al, the travel and accommodationcosts to attend these meetings areborne by the elected member.

A continuing flow of new AdCommembers who are interested in work-ing for the improvement of the Soci-ety and its related technical areas isessential for the continued develop-ment of EDS and the field of electrondevices. Those interested in the field,the Society, and its operations areencouraged to attend AdCom meet-ings, become involved in Societyactivities, and consider running forelection to AdCom.

Steven J. HilleniusEDS Nominations & Elections Chair

Agere SystemsAllentown, PA, USA

EDS Administrative Committee Election ProcessEDS Administrative Committee Election Process

Call For Nominations - EDS AdComCall For Nominations - EDS AdComThe Electron Devices Society of theIEEE invites the submission of nomi-nations for election to its Administra-tive Committee (AdCom). Presently,the AdCom meets twice per year andis composed of 22 members. Sevenmembers will be elected this year for aterm of three years, and a maximumof two consecutive terms is allowed. In2004, the election will be held after theAdCom meeting on Sunday, 12December. Electees begin their term inoffice on 1 January 2005. For yourinformation, the nominees do notneed to attend the AdComMeeting/Election to run.

Nominees are being sought to fillthe slate of candidates. Nomineesmay be self-nominated, or may benominated by another person; inthe latter case, the nominee must

have been contacted and haveagreed to serve i f elected. Anymember of EDS in good standing iseligible to be nominated. As anothercondition for nomination and elec-t ion, a nominee is expected toattend the two annual AdCom meet-ings. In general , the travel andaccommodation costs to attendthese meetings are borne by theelected member.

In 2003, EDS made changes to itsConstitution and Bylaws to requirethat at least one elected AdCommember is a Graduate of the LastDecade (GOLD member). A GOLDmember is defined by IEEE as amember who graduated with his/herfirst professional degree within thelast ten years. We encourage andare looking forward to receiving

nominations from EDS members inthis category.

Please send your nominee’sname, address, and supportinginformation to the EDS ExecutiveOffice Administrator, Laura J. Riello,IEEE, 445 Hoes Lane, Piscataway, NJ08854, Fax: 732-235-1626, E-Mail:l .r iel [email protected] in t ime to bereceived by the deadline of 15 Octo-ber 2004. It is very desirable thatsubmissions include a biographicalsummary in a standard two-pageformat. The EDS Executive Officecan provide you with an example ofthe format. If you have any ques-t ions regarding the nominationrequirements or process, feel free tocontact the Nominations and Elec-tions Chair, Steven J. Hillenius ([email protected]).

The deadline for EDS chapters torequest a subsidy for 2005 is 1 Sep-tember 2004. For 2004, the EDSAdCom awarded funding to 52 chap-ters, with most amounts primarilyranging from US$250 to US$1,000. InJune, Chapter Chairs were sent an e-mail notifying them of the currentfunding cycle and providing them witha list of guidelines. In general, activi-ties which are considered fundableinclude, but are not limited to, mem-

bership promotion travel allowancesfor invited speakers to chapter events,and support for student activities atlocal institutions. Subsidy requestsshould be sent via e-mail, fax or mailto the EDS Administrator, Laura J.Riello, IEEE, EDS Executive Office, 445Hoes Lane, Piscataway, NJ 08854,[email protected] or fax 732 235 1626.Prior to the submission of the subsidyrequest, the Chapter Chair must sub-mit a chapter activity report to its

respective SRC Chair and Laura Rielloof the EDS Executive Office by July 1.This report should include a generalsummary of chapter activities (one totwo pages) for the prior July 1st - June30th period. You must also attach acopy of the activity report to yourchapter subsidy request. Final deci-sions concerning subsidies will bemade by the EDS SRC Chairs/ViceChairs in early November. Subsidychecks will be issued by late January.

Call for EDS Chapter Subsidies for 2005Call for EDS Chapter Subsidies for 2005

eds0704.qxd 5/18/04 1:44 PM Page 10


EDS Regions/ChaptersCommittee Report- by Cor L. Claeys, EDS Vice President ofRegions/Chapters

The EDS Regions/Chapters Commit-tee (RCC) has beenvery active and suc-cessful during thelast year. In the last6 months of 2003,new ED chapterswere formed in

Eastern North Carolina, Orange Coun-ty, Calcutta, and a Student Chapter inLouvain-La-neuve, Belgium, bringingthe total to 109 chapters. For themoment the formation of an addi-tional 15 chapters is under discussionand progressing well. This clearlyindicates the strong interest andneed for ED chapters. The quality ofthe chapter activities organized bythe chapters is monitored and trig-gered by the Chapter of the YearAward. In 2003 there was a toughcompetition for the award with theED Boise Chapter being the winner.

The re-organization of the RCC into 5subcommittees (North America East,North America West, Europe-Africa-Mid-dle East, Latin America, and Asia-Pacific)has turned out to work efficiently andhas strongly increased the interactionsbetween the Chapters and the Society.Beginning this year, several additionalVice-Chairs of these subcommitteeshave been appointed. Region 9 is start-ing with a new initiative, called the Out-standing Student Paper Award, wherebyan award will be given to a regional stu-dent who authored or co-authored dur-ing the previous year a paper orconference manuscript in an IEEE Jour-nal or Proceedings Volume. Dependingon the success of this initiative, it maybe extended to other regions as well.

Regional chapter meetings havebeen organized in Region 9 (SaoPaulo, September) and Region 2

(Washington DC, December). In May,a Region 8 meeting was held in con-junction with the Ed AdCom meetingin Madrid, Spain. The organization ofmini colloquia, in which 5 to 10 Distin-guished Lecturers are participating, isa very successful formula attractingmany attendees. The most recentones were organized in Sao Paulo(September 2003, Seoul (September2003), Singapore (October 2003) andBombay (October 2003), and in May inMadrid, Spain. More and more chap-ters are also making use of the Distin-guished Lecturer Program.

The near future strategic activitieswill be focusing on issues related to:• Increasing the number of chapters

and Student chapters in LatinAmerica.

• Special actions to promote the for-mation of new chapters in Indiaand China, both which have a verystrong potential in ITC and aregrowing fast. Attention will have tobe given to local circumstances.

• Extending in some Regions, the num-ber of local Distinguished Lecturers.

• Further intensifying interactionbetween the chapters and the Soci-ety, whereby the role of ChapterPartners is very important

Activities and Future Plans ofthe EDS Membership Committee-by James B. Kuo, EDS Vice President ofMembership

EDS membershiphas been quicklybecoming global-ized these days.From the 2003 EDSmembership statis-tics, the US (Region1-6) has 57.6% ofthe total member-ship, Asia and the

Pacific Region (Region 10) has 20.6%and Europe, Middle East & Africa(Region 8) has 18.3%. According to the

statistics in the recent years, non-USmembership becomes more and moreimportant. Nowadays the worldwidesemiconductor industry is reconfigur-ing its territory at a quick pace. In com-pliance with the EDS strategic planningposition statement to ensure EDSactivities reflect the current and thefuture global trends, the EDS Member-ship Committee has been working tocreate new strategies in membershippromotion. In addition to on-site mem-bership promotion at important confer-ences and various other promotionalevents held over the years, EDS mem-bership promotion has been success-ful from other programs such as theSenior Membership Program (SMP)and the Membership Fee Subsidy Pro-gram (MFSP). Among the 38 societiesof IEEE, EDS has the most successfulSMP program for the past two years.At the last AdCom meeting, animproved SMP program has beenapproved for further success in mem-bership retention at EDS. Also thefirst-year Partial Membership Fee Sub-sidy Program (PMFSP), which isderived from MFSP, has also beenapproved for attracting potentialmembers. To further increase EDSmembership, promoting new chaptersin the under-served regions, especial-ly in China and India, is another majorstrategy. In conjunction with theRegions/Chapters and Education com-mittees, via frequent, short visits tomajor universities coordinatedthrough the Distinguished LecturersProgram, we hope to develop newchapters in the under-served regions.In China, in addition to the currentBeijing and Shanghai chapters, EDS iscurrently in the process of formingchapters in Xi’an and Nanjing, to bet-ter reflect the booming semiconductorindustry and research activities there.A similar situation exists in India. EDSmembership promotion is everymember’s business. We encourageevery one of you to get involved.

EDS Standing Committee Reports –

Regions/Chapters & Membership

EDS Standing Committee Reports –

Regions/Chapters & Membership

Cor L. Claeys

James B. Kuo

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EDS Technical Committee Reports – Photovoltaic

Devices & VLSI Technology & Circuits

EDS Photovoltaic DevicesTechnical Committee Report-by Dennis J. Flood, EDS PhotovoltaicDevices Chair

The PhotovoltaicDevices TechnicalC o m m i t t e e ’ s(PVDTC)’s primaryresponsibility is tokeep the EDSapprised of the lat-est worldwideresults in photo-voltaic device and

system research and development, andthe status of world markets and applica-tions. The Committee will provide theEDS with highlights from each majorconference and will track emerging tech-nologies reported in the peer-reviewedliterature. The Committee’s membershiprepresents each major geographicalregion with a significant level of activityin both R&D programs and commercial-ization efforts. At present, those regionsare North America, Europe, Japan/Asiaand Australia/South Pacific.

Reports to the EDS will come in theform of short white papers (one to threepages) that will be made available toIEEE members via direct request to thePVDTC, pending IEEE/EDS approval. Thefirst such white paper will be issued fol-lowing the European Photovoltaic SolarEnergy Conference and Exhibition, heldin Paris, France, June 7-11, 2004. (Forthose interested in more information onthe European Conference, which is nowthe largest in the world, please go toh t t p : / / w w w . p h o t o v o l t a i c -conference.com/ for further information).Information on the next IEEE Photovolta-ic Specialists Conference, to be held inOrlando, Florida Jan. 3-8, 2005, will soonbe available via the web.

Current PVDTC members and theareas each represents are: North Ameri-ca: Dennis Flood [email protected]); John Meakin ([email protected]); David Carlson ([email protected]); Nicola Pearsall([email protected]) and oneother to be named; Japan/Asia: Masafu-mi Yamaguchi ([email protected]) and Kosuke Kurokawa(kurochan@ cc.tuat.ac.jp); and Aus-tralia/South Pacific: Martin Green(m.green@ unsw.edu.au).

EDS VLSI Technology & CircuitsTechnical Committee Report-by Bin Zhao, EDS VLSI Technology &Circuits Chair

Six new membersjoined the VLSITechnology and Cir-cuits TechnicalCommittee at thebeginning of 2004.The committee nowhas 17 membersrepresenting a verywide spectrum of

technical expertise in VLSI devices,technology, and circuits. The presentmembers are: Ilesanmi Adesida (Uni-versity of Illinois), Joe Brewer (Universi-ty of Florida), Steve Chung (NationalChiao Tung University), Jamal Deen(McMaster University), James Hutchby(SRC), Shuji Ikeda (Trecenti Technolo-gies), Jason Jenq (UMC), Mark Law(University of Florida), Kwyro Lee(KAIST), Yanhe Li (Tsinghua Universi-ty), Huiling Shang (IBM), RolandThewes (Infineon), Akira Toriumi (Uni-versity of Tokyo), Albert Wang (IllinoisInstitute of Technology), Jeffery Welser(IBM), Reinout Woltjer (Philips), andBin Zhao (Skyworks) - Chair.

Since its formation in 1998, theVLSI Committee has chartered itsmissions to identify new technicaltrends, to help foster new technicalconcepts, and to serve the emergingneeds of the Electron Devices andSolid-State Circuits communities inVLSI. The committee achieves thesemissions by initiating topical work-shops, proposing special journalissues to cover important VLSI topics,organizing or supporting panel ses-sions, special sessions, and shortcourses at major conferences. Recentwork accomplished by the committeeand its members includes:• The International Workshop on

Future Information ProcessingTechnologies held in Nov. 2003.

• Chaired the section of “EmergingResearch Devices” in the InternationalTechnology Roadmap for Semicon-ductors (ITRS) – released in Dec. 2003.

• Co-chaired the section of “RF andAnalog/Mixed-Signal IC Technolo-gies for Wireless Communica-tions” in the ITRS Roadmap –

released in Dec. 2003.• A special issue on “Integrated Cir-

cuit Technologies for RF CircuitApplications” of Transactions onElectron Devices has beenapproved – it will be published inMarch 2005.

• Workshop on Compact Modelingheld in March 2004 at the 7th Inter-national Conference on Modelingand Simulation of Microsystems.

• Emerging Memory Workshop heldat Stresa, Italy in April 2004.In 2004, the committee continues

its tradition to help the IEDM by pro-viding suggestions and support forthe Evening Panel Sessions and theEmerging Technologies Session. Wecontinue to work with ITRS TechnicalWorking Groups in “EmergingResearch Devices/Materials” and “RFand Analog/Mixed-Signal IC Tech-nologies for Wireless Communica-tions” for the ITRS 2004 update. Thecommittee’s other on-going activi-ties include: organizing the Interna-t ional Workshop on VLSITechnologies and Circuits for RFApplications, Aug. 2004; organizinga short course and a panel sessionat the International Conference onSolid-State and Integrated-CircuitTechnology, Oct. 2004; organizingseveral special journal issues on“Non-Classical CMOS Devices andTechnologies: Extending theRoadmap,” “Advanced Non-VolatileMemory Technologies for Embed-ded Applications,” “HeterogeneousIntegration of Dissimilar Technolo-gies,” “Information ProcessingTechnology and Circuit Architec-tures beyond CMOS,” etc.

Looking forward, the VLSI Com-mittee will continue to focus onidentifying emerging trends in VLSIdevices and technologies, enhanc-ing the bridge between VLSI tech-nologies and circuits, and promotingVLSI technical activities globally. Ifyou have ideas and suggestions forthe VLSI Committee to better serveyour interests and needs, pleasecontact us. For more information onthe committee and our activities,please visit our website: http: / /www.ieee.org/society/eds/techni-cal_committees/vlsi.

EDS Technical Committee Reports – Photovoltaic

Devices & VLSI Technology & Circuits

Dennis J. Flood Bin Zhao

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The purpose of this article is to givethe EDS community a few highlightson compound semiconductors fromthe perspective of the 2003 Interna-tional Technology Roadmap for Semi-conductors (ITRS). This articlementions briefly only a portion of thework done by the ITRS TechnicalWorking Group on RF and Analog-Mixed Signal (AMS) Technologies forWireless Communications.

A technology roadmap for RF andAMS applications of compound semi-conductors now exists in the 2003ITRS. Past ITRS roadmaps focused onmainstream CMOS and BiCMOSprocesses and applications. For thefirst time, the current 2003 ITRSRoadmap includes III-V compoundsemiconductors in the context ofCMOS technology nodes. To locatethis part of the 2003 ITRS, pleasebrowse to http://public.itrs.net/Files/2003ITRS/Home2003.htm and thenclick on the RF and AMS Technolo-gies for Wireless CommunicationsChapter. This Chapter addresses theintersection of Si based technologiesand III-V compound semiconductorbased technologies. It presents tech-nical challenges and requirementsthat RF and AMS technologies mustmeet for successful deployment inwireless applications that span thefrequency range from 0.8 GHz to 100GHz. Such applications include suchcellular phone transceivers, cellularbase station amplifiers, widebandlocal area networks, automotive radar,

all weather landing, and the like.Wireless applications have grown

quickly to become significant marketsfor semiconductor device manufac-turers. The 2003 ITRS now recognizeswireless applications enabled by RFand AMS devices and circuits as aseparate new system and technologydriver. In contrast to the other threeITRS drivers, which are the DRAM,MPU, and ASIC, the correlationbetween feature size and device per-formance is weaker for RF and analogdevices. Gordon Moore’s first law [1]is used to assess the density of main-stream CMOS based devices and isonly one among many competingways to assess the performance of RFand AMS devices. Instead, RF andanalog devices must meet many oth-er performance specifications andparameters that do not scale in thesame manner as CMOS device met-rics scale.

The most important drivers forwireless communications systemsare cost, time to market, availablefrequency bands, power consump-

tion, functionality, sizeof mobile units, veryhigh volumes of prod-uct, appropriate perfor-mance requirements,and standards and pro-tocols. Standards andprotocols often affectadvances in RF andAMS technologies muchmore than they affectadvances in many of theother CMOS technolo-gies. They influenceconsiderably parame-ters such as operating

frequency, channel bandwidth, andacceptable transmit power. Suchstandards and protocols impactoverall system performance andinclude regulations from variousgovernments that determine fre-quency availability, systems compat-ibility, and market shares.

The technology requirements formeeting the demands of wirelesssystems are manifold, often con-flicting and very different from digi-ta l requirements. Thus, we seeoften today in wireless systems acombination of specialized RF andanalog technologies such as SiCMOS, SiGe, Si BiCMOS, SiLDMOS, GaAs MESFET, GaAsPHEMT, GaAs HBT, InP HEMT, andInP HBT. Integration is closely relat-ed to and to a great extent dictatedby cost and performance targets.Depending on requirements eithermonolithic system on chip or sys-tem in package (SiP) integrationmay be preferred. When required,the SiP approach is especially suit-ed to bring the specialized RF andAMS technologies together in ahighly integrated, high-perfor-mance, and lower cost unit.

RF technologies often requireadded tolerances for the values ofperformance parameters becauseseveral conflicting or competingrequirements must be met simulta-neously. Therefore, design compro-mises must be made amongcompeting performance parameterssuch as dynamic range, PAE, lineari-ty, high output power, low current, andlow voltage. For example, the effectivebit resolution of analog-to-digital con-verters should be greater than what isneeded for fulfilling a given communi-cation specification in order to performsignal error correction in “real time”and to keep latency to a minimum.Increased RF performance for silicon ispredominantly achieved by geometri-cal scaling. Increased RF performancefor III-V compound semiconductors isachieved by optimizing carrier trans-port properties through materials andbandgap engineering.

Compound Semiconductor Roadmap Embedded

in the 2003 International Technology

Roadmap for Semiconductors

Compound Semiconductor Roadmap Embedded

in the 2003 International Technology

Roadmap for Semiconductors

Acronyms AMS analog-mixed signalASIC application-specific integrated circuitBiCMOS bipolar-complementary metal oxide semiconductorCMOS complementary metal oxide semiconductorDRAM dynamic random-access memoryEDS Electron Devices SocietyHBT hetero bipolar transistorHEMT high electron mobility transistorLDMOS laterally diffused metal oxide semiconductorMESFET metalsemiconductor transistorMHEMT metamorphic high electron mobility transistorMPU multiprocessing unitPAE power added efficiencyPHEMT pseudomorphic high electron mobility transistorRF radio frequency

eds0704.qxd 5/18/04 1:44 PM Page 13


The locations of boundaries,shown schematically in Figure 1,between the kinds of RF semiconduc-tors (e.g., Si, SiGe, GaAs, and InP)are broad, are diffuse, change withtime, and depend very much on cost.The boundaries between the groupIV semiconductors Si and SiGe andbetween SiGe and the III-V semicon-ductor GaAs have been moving tohigher frequencies with time and forother applications the boundarybetween GaAs and InP is tending toshift to lower frequencies. Eventually,MHEMTs may displace both GaAsPHEMTs and InP HEMTs. The widebandgap semiconductors, not shownin Figure 1, such as SiC and GaN willbe used for infrastructure such as cel-lular base stations at frequencies typ-ically above about 2 GHz. When highvolumes of product are expected, sili-con and more recently SiGe replacethe III-Vs in those markets for whichgroup IVs can deliver appropriateperformance at low cost. In futureyears, carrier frequency is expectedto lose its significance in defining theboundaries among technologies forsome applications, because most ofthe RF technologies can provide veryhigh operating frequencies. Futureboundaries will be dominated moreby such parameters as noise figure,output power, PAE, linearity, andcost. Two or more technologies maycoexist with one another for certainapplications such as cellular trans-

ceivers, modules for terminal or basestation power amplifiers, and mm-wave receivers. The “future” for com-pound semiconductors has arrived.

This article is based in part on 1)the paper entitled Circuits and Devicefor Wireless Communications, sub-mitted to the IEEE Circuits andDevices Magazine for publication inthe June 2004 issue and 2) on the2003 ITRS Chapter entitled RF andAnalog Mixed-Signal Technologiesfor Wireless Communications, Semi-conductor Industry Association, Inter-national Technology Roadmap forSemiconductors, 2003 edition, Inter-national SEMATECH:Austin, TX, 2003.The ITRS logo is used by permissionfrom the Semiconductor Industry

Association, The International Tech-nology Roadmap for Semiconductors,2003 edition. International SEMATE-CH:Austin, TX, 2003.

References:G. E. Moore, Electronics, CrammingMore Components onto IntegratedCircuits, Vol. 38, No. 8, 19 April1965 issue.

Herbert S. BennettSemiconductor Electronics DivisionElectronics and Electrical Engineer-

ing LaboratoryNational Institute of Standards and

TechnologyGaithersburg, MD, USA

[email protected]

Figure 1: Application Spectrum (The format and style used here are adapted from Fig.1 in MicrowaveJournal of the paper by D. Barlas et al., page 22, June 1999, and are printed with permission from theEditor, Microwave Journal.)

Congratulations to the EDS Members Elected

to the National Academy of Engineering (NAE)

Congratulations to the EDS Members Elected

to the National Academy of Engineering (NAE)

The U.S. National Academy of Engi-neering (NAE) elected twenty-five IEEEmembers in 2004, 22 as NAE Membersand 3 as NAE Foreign Associates. Threeof the twenty-five members elected areEDS members. These members will beinducted into the NAE this October.

A private, nonprofit institution, theNAE has more than 2,100 peer-elect-ed members and foreign associates-senior professionals in business,academia and government who areamong the world’s most accom-plished engineers.

The three EDS members elected in

2004 were elected as NAE Members.They are: Fellow, Young-Kai Chen; Fel-low, Paul D. Dapkus; and Member,Daniel C. Tsui.

The other nineteen IEEE memberselected as NAE Members are: Fellow,Siva S. Banda; Fellow, Rodney A. Brooks;Fellow, Vernon L. Chartier; Fellow, LarryA. Coldren; Fellow, Eli Fromm; Fellow,Richard Gambino; Member, Van Jacob-son; Fellow, Biing-Hwang (Fred) Juang;Senior Member, Pradman P. Kaul;Senior Member, Yoram Koren; Member,Frank T. Leighton; Fellow, Joan L.Mitchell; Member, Raymond E. Ozzie;

Life Fellow, Andrew P. Sage; Fellow,Alfred Z. Spector; Senior Member,Bjarne Stroustrup; Senior Member,Ronald D. Sugar; Fellow, Vijay Vittal; andMember, Victor W. Zue.

The three IEEE members electedas a NAE Foreign Associate are: Fel-low, Tatsuo Izawa; Fellow, LennartLjung; and Member, Pierre Perrier.

Our congratulations to all the IEEEmembers elected to this prestigiousinstitution.

Jerry M. WoodallYale University

New Haven, CT, USA

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Status Report from the 2003 EDS

Graduate Student Fellowship Winners

Status Report from the 2003 EDS

Graduate Student Fellowship Winners

In 2000, the IEEE approved the estab-lishment of the Electron Devices Soci-ety Graduate Student FellowshipProgram. The Program is designed topromote, recognize, and support grad-uate level study and research within theElectron Devices Society’s Fields ofInterest: which include: All aspects ofthe physics, engineering, theory andphenomena of electron and ion devicessuch as elemental and compoundsemiconductor devices, organic andother emerging materials baseddevices, quantum effect devices, opticaldevices, displays and imaging devices,photovoltaics, solid-state sensors andactuators, solid-state power devices,high frequency devices, micromechan-ics, tubes and other vacuum devices. Indeference to the increasing globaliza-tion of our Society, at least one fellow-ship is to be awarded to students ineach of three geographical regions:Americas, Europe/Mid-East/Africa, andAsia & Pacific.

In July 2003, EDS announced thewinners of the 2003 Fellowships’.The two winners were: Yu-LongJiang of Fudan University, Shanghai,China and Javier Salcedo of the Uni-versity of Central Florida, Orlando,FL, USA. The winners are pursuingdistinctly different research topicsfor their doctoral degrees. The fol-lowing are brief progress reportswritten by the award winners.

Yu-Long Jiang isa Ph.D. student inthe Department ofMicroelectronics atthe Fudan Universi-ty, Shanghai, Chi-na. His supervisorsare Professor Bing-Zong Li and Profes-sor Guo-Ping Ru.

Yu-Long spent a year in AxcelisTechnologies, Inc., Beverly, Massachu-setts, from February 2003 to February2004, as a visiting scholar. He collabo-rated with scientists from Axcelis andperformed research of nickel silicideformation on a shallow junction. Hecontinued his research in this areaafter returning to Fudan University.

Yu-Long published several paperssince winning the IEEE EDS graduate

student fellowship. A paper entitled“The reaction characteristics of ultra thinNi film on undoped and doped Si (100)”authored by him has been accepted forpublication by the Journal of ElectronicMaterials. Another paper entitled“Dopant redistribution induced by Nisilicidation at 300oC” has been pub-lished in the Proceedings of the FourthInternational Workshop on JunctionTechnology (IWJT-2004). He gave anoral presentation in this workshop. Healso helped to organize this workshopand edit the electronic proceedings,which is sponsored by the IEEE/EDS andEDS Shanghai Chapter. Besides he hassubmitted two papers, one to AppliedPhysics Letters to explain the electricaldependence of nickel silicide filmformed at low temperature on the sub-strate dopant type and another one toIEEE Electron Devices Letters to demon-strate the improvement of nickel silicide/Si interface properties by a 2-step RTPtechnology. He also co-authored (sec-ond author) an invited paper on nickelsilicide for the International Conferenceon Materials for Advanced Technolo-gies-2003 in Singapore.

Yu-Long also paid great attentionon the collaboration with semiconduc-tor industries. The friendship betweenFudan University and Axcelis Tech-nologies, Inc. has been strengthenedwith Yu-Long’s hard research work atthe company headquarters. His jointresearch work with Axcelis Technolo-gies in nickel silicide has attracted theinterest of many local fabs in China. Hewas invited by the SemiconductorManufacturing International (Shang-hai) Corp. (SMIC) to introduce nickelsilicide studies, which greatly pushedforward the research collaborationbetween Fudan Univeristy and SMICfor 65nm node.

Javier A. SalcedoThe IEEE ElectronDevices Society2003 Graduate Stu-dent FellowshipAward presented tome at IEDM inDecember 2003 rep-resents a memo-rable personal

distinction. I wish to thank the EDS for

the recognition and the support thisprestigious award embodies. I wouldlike to express my gratitude as well, tomy family, Simón Bolívar University(USB) and my former teachers at theUSB Solid-State Electronics Laboratory,my Ph.D. advisor at the University ofCentral Florida (UCF), Dr. Hefner’s SoCGroup at NIST, and the ReliabilityGroup at Intersil Corporation, all ofwhom have provided priceless guid-ance and support for my personal andprofessional development.

This EDS Award has partly supportedmy research work at UCF dealing withthe study of novel thyristor-based elec-trostatic discharge (ESD) protectioncells. In particular it has contributed withmy projects related to design, modelingand optimization of multiple variables inthe ESD protection cell and its ultimateon-chip integration. As a result, superiorESD performance and I-V characteristicsnot previously observed in other ESDdevices have been obtained. A detailedstudy of the physics of these ESD cellsand of the design criterion extendable todifferent technologies is currently underway. These novel ESD protection cellsappear very promising for a wide rangeof advanced IC applications and result tobe increasingly important for highly inte-grated system-on-a-chip applications,where silicon area is a critical concern.Two ESD protection systems are beingcurrently designed and optimized withthe use of thyristor-based cells calibrat-ed within different fabrication processesfor very demanding ESD stress condi-tions and wafer area constrains. One isfor the protection of communicationsICs, the other for protecting MEMS chipswith embedded gas sensors. Myresearch work has so far resulted in thefiling of a patent and the submission oftwo conference papers.

Ilesanmi AdesidaEDS President-Elect & VP of

Educational ActivitiesUniversity of Illinois

Urbana, IL, USA

Stephen A. ParkeEDS Graduate Student Fellowship

ChairBoise State University

Boise, ID, USA

Yu-Long Jiang

Javier A. Salcedo

eds0704.qxd 5/18/04 1:44 PM Page 15


The EDS Chapter of the YearAward is given each year based onthe quantity and quality of the activi-ties and programs implemented bythe chapters during the prior July 1st

– June 30th period. Nominations forthe award can only be made by Chap-ter Partners, SRC Chairs/Vice-Chairs,or self-nominated by Chapter Chairs.

The winning chapter will receive a

certificate and check for $1,000 to bepresented at the International ElectronDevices Meeting (IEDM).

The schedule for the award processis as follows:

Call for Nominations for the EDS

Chapter of the Year Award

Call for Nominations for the EDS

Chapter of the Year Award

Action DateCall for Nominations E-Mailed to Chapter Chairs, 6/1Chapter Partners, SRC Chairs & SRC Vice-Chairs Deadline for Nominations 9/15Regions/Chapters Committee Selects Winner Early-OctoberAward given to Chapter Representative at IEDM First week of December

The 2003 IEEE International ElectronDevices Meeting was held this pastyear in Washington, DC. The twoshort courses that were offered at thismeeting were titled, “InterconnectScaling: From Technology to SystemDesign” and “Silicon +: AugmentedSilicon Technology”. These shortcourses are now available on video-tape to purchase through IEEE Cus-tomer Service.

Interconnect Scaling: From Technology to System Design Presented by: Karen Maex, IMECand KULeuven, Leuven, Belgium;Chai-Hong Jan, Intel Corp., Hills-boro, OR; Jeff Gambino, IBM, EssexJunction, VT; Eric Beyne, IMEC, Leu-ven, Belgium; Davide Pandini, STMi-croelectronics, Agrate Brianza, Italy;

Krishna Saraswat, Stanford Univer-sity, Stanford, CA

Order information:Title: Interconnect Scaling: FromTechnology to System DesignNTSC Order No. EV6991NTSC ISBN: 0-7803-8221-8 PAL Order No. EV6992PAL ISBN: 0-7803-8222-6 IEEE Member Price: $380.00List Price: $450.00

Silicon +: Augmented SiliconTechnology Presented by: Tsu-Jae King, Universi-ty of California, Berkeley, CA; JerryFossum, University of Florida,Gainesville, FL; Jean-Pierre Colinge,University of California, Davis, CA;Digh Hisamoto, Hitachi, Ltd., Tokyo,

Japan; Shinichi Takagi, Toshiba Corp.,Tokyo, Japan; David Harame, IBM,Essex Junction, VT

Order information:Title: Silicon +: Augmented SiliconTechnologyNTSC Order No. EV6993NTSC ISBN: 0-7803-8223-4 PAL Order No. EV6994PAL ISBN: 0-7803-8224-2 IEEE Member Price: $380.00List Price: $450.00

Here’s how to place your order forthe above videos:Telephone: (800) 678-4333 (in the USAor Canada) or (732) 981-0060 Fax: (732) 981-9667Online: http://shop.ieee.org/store/Email: [email protected]

IEDM Short Courses on Videotape IEDM Short Courses on Videotape

Congratulations to the EDS Members RecentlyElected to IEEE Senior Member Grade!

Congratulations to the EDS Members RecentlyElected to IEEE Senior Member Grade!

Chew Hoe Ang*Joseph BarnardEdward Y. Chang*Cynthia A. Colinge*Tianhong CuiJody N. DefazioPankaj Dixit*

Maxim ErshovAlois P. FreundorferKirk S. GiboneyToshihiko HamasakiKoji HasegawaAhmed HemaniKaterina Y. Hur

Yoshitada IyamaRichard KeatingMandar J. KhurjekarAlbert KordeschKenneth S. KundertLluis F. Marsal-GarviRonald J. Melanson

Andrei MihneaTamotsu NishinoRajendra M. PatrikarMario M. PelellaMohammed T. QuddusDonald W. ScansenMarathe A. Shashishekar

Jyuo-Min ShyuChang-Feng WanJames C. Weiler, Jr.Kazuhisa YamauchiJiong Zhang*

* = Individual designated EDS as nominating entity

If you have been in professional practice for 10 years, you may be eligible for Senior Membership, the highest gradeof membership for which an individual can apply. New senior members receive a wood and bronze plaque and a creditcertificate for up to US $25 for a new IEEE society membership. In addition, a letter will be sent to employers, recogniz-ing this new status.

For more information on senior member status, visit http://www.ieee.org/membership/grades_cats.html#SENIORMEMTo apply for senior member status, fill out an application at http://www.ieee.org/organizations/rab/md/smelev.htm.

eds0704.qxd 5/18/04 1:44 PM Page 16


USA, Canada andLatin America(Regions 1-6, 7 & 9)

USA, Canada andLatin America(Regions 1-6, 7 & 9)

ED NorthernVirginia/Washington - by Hrayr SayadianThe Northern Virginia/WashingtonChapter of the Electron Devices Societyheld four meetings between Januaryand March 2004.

The January 22, 2004, meeting wastitled NanoBio 101, and was moderat-ed by Dr. Nathan Swami, Director,iNanoVa. This presentation featuredDr. Anantha Krishnan, a ProgramManager at the Defense AdvancedResearch Project Agency and HarryDorn of Virginia Tech. Dr. Krishnandescribed current bioengineering mul-ti-disciplinary programs and Dr. Dorndiscussed the current status and appli-cations of the physics/chemistry inter-face of carbon-based nanostructures.

Dr. Richard Claus, President ofNanoSonic, and Dr. Harris Goldberg,President of InMat, described currentapplications of nano-coated materialsand products at the February 12, 2004,meeting. Murty Polavarapu, the pastchair moderated the discussion.

The March 9, 2004, nanotechnolo-gy presentation was titled NanoElec-tronics 101 and was moderated by Dr.Nathan Swami, Director, iNanoVa.This presentation featured Dr. Stan

Williams, a Senior Hewlett-PackardFellow and the Director of QuantumScience Research at Hewlett Packardand Dr. Lloyd Harriett, Chair of theElectrical Engineering Department atthe University of Virginia. The speak-ers described current research inmicroelectronics; electron, ion, andphoton beam lithography; fabricationof nano-scale structures and devices;switching; and molecular electronics.

Also, on February 10, our Chapterco-sponsored with the MTT Washing-ton/ Northern Virginia Chapter a pre-sentation titled “Power Amplifiers:Technology and Design Techniques”by Dr. Dale Dowson of NorthropGrumman Corporation, whodescribed device technology and cir-cuit design techniques suitable for1,000 Watt internally matched powertransistors at L-Band and for 200Watts at S-Band.

The meetings on nanotechnologyare cosponsored with Atlantic NanoForum. For more information, pleasesee http://www.ewh.ieee.org/r2/no_vir-ginia/eds/.

2003 InternationalSemiconductor DeviceResearch Symposium- by Pankaj B. Shah and Ken A. JonesThe 2003 International SemiconductorDevice Research Symposium (ISDRS)was held December 10 – 12, in Wash-ington D.C. The Army Research Labo-

ratory, National Institute of Scienceand Technology, Army ResearchOffice, IEEE, EDS, National ScienceFoundation, Naval Research Laborato-ry, and the Electronics and ComputerEngineering Department of the Univer-sity of Maryland sponsored it.

This biannual symposium focuseson futuristic electronic and photonicdevices and the materials technologynecessary to make them. Areas suchas novel device concepts, advancedprocessing technologies, nanotech-nology, wide band-gap semiconduc-tors, MEMS materials and devices,dielectrics, magnetic materials anddevices, organic and polymer opto-electronic materials and devices, ultrahigh frequency devices & RF effects,and high power-high temperaturedevices, were included. These themeswere highlighted by three plenarytalks – “Photonic Band gap BasedDesigns for Nano-Photonic IntegratedCircuits” by Prof. Eli Yablonovitch(UCSB); “A New Spin on Electronics –Spintronics” by Prof. Stu Wolf (UVaand DARPA); and “Enhanced Func-tionality in GaN and SiC Devices byUsing Novel Processing” by Prof.Steve Pearton (UFl).

Three parallel sessions were heldfor the two and half days of the con-ference with more than 250 paperspresented. Oral presentation awardswere given in the area of devices toAnthony De Marco from the Universi-

Regional and Chapter NewsRegional and Chapter News

Ken Jones, Conference Chair, presenting the Aldert vanZiel Award to Jim Plummer.

Prof. Arora and members of the EDS Student Chapter at UNICAMP.

eds0704.qxd 5/18/04 1:44 PM Page 17


ty of Maryland for “Maskless Fabrica-tion of JFETs Via Focused IonBeams”, and in the area of materialsto Shawn Bradley of Ohio State Uni-versity for “Dependence of SchottkyBarrier Height on Electronic andChemical Properties of Ni/AlGaN Con-tacts”. Poster presentation awardswere given in the area of devices toDae Hyun Kim from Seoul NationalUniversity for “AsymmetricallyRecessed 0.13 mm In.65Ga.35AsHEMT’s Using Double-Deck ShapedGate Technology”, and in the area ofmaterials to Hasina Ali of the Univer-sity of Maryland for “Study of ZnONanocluster Formation withinStyrene-Acrylic Acid and Styrene-Methacrylic Acid Diblock Copolymerson Si and SiO2 Surfaces”.

The conference banquet highlightwas the Aldert van der Ziel award giv-en in honor of Professor Aldert vander Ziel for his distinguished career asan educator and scientist. This year’srecipient was Dr. James D. Plummer,Dean of Engineering, FrederickEmmons Terman Professor of Engi-neering, and the John M. Fluke Profes-sor of Electrical Engineering atStanford University. Dr. Plummer waschosen because, not only has he beena world renowned pioneer in the fieldof silicon based electronics, but also asuperb educator evidenced by hismany teaching awards and his men-toring of close to 100 Ph.D. students.

Dr. Ken Jones (ARL) chaired thisyear’s organizing committee. Otherorganizing committee membersincluded Dr. Jerry Woodall (Yale Uni-versity) - symposium co-Chair, Dr. AlHefner (NIST) - Program Chair, Dr.Gerry Borsuk (NRL) - Program co-Chair, and Dr. Agis Iliadis (Universityof Maryland) - Publications Chair.Both Dr. Hideki Hasegawa, (HokkaidoUniversity) - Asian Continent basedChair and Dr. Mikael Ostling (KTH Roy-al Institute of Technology) - EuropeanContinent based Chair, were veryactive in recruiting participants fromoverseas. Dr. Pankaj Shah (ARL)served as Local Arrangements Chair,and Dr. Tom Murphy (University ofMaryland) as Student Awards andPublicity Chair.

For more details, see the confer-ence website at http://www.ece.umd.edu/isdrs2003/.

~ Murty S. Polavarapu, Editor

ED/MTT Orange County- by Yuhua ChengThe ED/MTT Orange County Chapterheld a seminar on February 6, 2004 atthe campus of Skyworks Solutions.Prof. Hiroshi Iwai of the Tokyo Instituteof Technology was invited to deliver adistinguished lecture on “the future ofCMOS downscaling”. Dr. YuhuaCheng of Skyworks Solutions hostedthe seminar. In his talk, Prof. Iwaireviewed the recent trend of CMOSdownsizing and commented the limitof scaling while discussing the processand device design and optimization.According to Prof. Iwai, with the con-sideration of the requirement of theinvestment for the development andproduction of the chip increasing forevery new generation, aggressiveglobal alliance strategies betweencompanies, including universities andgovernment labs, will become themost important issue for the next 10years in order to survive the downsiz-ing race.

Prof. Iwai’s talk was well receivedby the audience and there werearound 40 attendees from universitiesand companies. There was a one-hour question and answer session.After the seminar, a group of peoplecontinued another half hour discus-sion with Prof. Iwai on both the tech-nical contents in the presentation andthe development of the ElectronDevices Society.

~ Sunit Tyagi, Editor

ED South Brazil- by Jacobus W. SwartOn March 11-12, 2004, the EDS South-Brazil Chapter and EDS Student Chap-

ter at UNICAMP (petition submitted toIEEE for approval) organized a seriesof short courses at the State Universityof Campinas, UNICAMP, in Campinas,SP. Prof. Vijay K. Arora, from theWilkes University (PA/EUA), gave twocourses as an EDS Distinguished Lec-turer. The courses were entitled: “TheRole of Physical and Behavioral Sci-ences in Developing Strategic Tech-nologies in Micro/Nano-Systems” and“Quantum Nanoengineering”. Thefirst course was two parts on the after-noon of March 11th and the secondcourse lasted all day on March 12thand was divided into 4 sessions. Dis-cussions with the participants wereperformed after each presentation.Prof. Arora’s courses attracted 30attendees, most of them, staff and stu-dents from the Faculty of Electricaland Computer Engineering of UNI-CAMP. At the beginning of the firstshort course, on March 11th, the newEDS Student Chapter at UNICAMP,was introduced to the participants.The group of students involved in theorganization of this new chapter werevery helpful in giving support to makethe two short courses a success. Prof.Arora also visited the Center for Semi-conductor Components, where ongoing research projects were present-ed. After his stay at UNICAMP, Prof.Arora went to the World Congress onEngineering and Technological Educa-tion (WCETE-2004) in Guarujá / San-tos, Brazil, from March 14 to March 17,to present his work entitled “Engineer-ing a Quality Global Organization: Inte-gration of Business and EngineeringParadigms”.

On March 26, 2004, the EDS South-Brazil Chapter and E

Documents

LECTRON EVICES OCIETY IEEE ELECTRON DEVICES ......IEEE Electron Devices Society Newsletter(ISSN 1074 1879) is published quarterly by the Electron Devices Society of the Institute of