DOMINANT TM Opto Technologies Mini DomiLED … the intense colors that seem to glow with energy and its ... Normalized at 10mA Forward Current; mA ... Forward Current; mA 0 10 20 30

06/04/2017 V3.01

Features:> High brightness surface mount LED.> Based on InGaN technology.> 120° viewing angle.> Small package outline (LxWxH) of 2.0 x 1.4 x 1.3mm.> Qualified according to JEDEC moisture sensitivity Level 2.> Compatible to both IR reflow soldering.> Environmental friendly; RoHS compliance.> Compliance to automotive standard; AEC-Q101.> Passed Corrosion Resistant Test. Appx. 4.1

Mini DomiLEDWith the intense colors that seem to glow with energy and its significant brightness, Mini DomiLED white LED is a highly reliable design device. Its dynamic nature makes it perfect choice for lighthing applications, office and home applications and standard industrial applications.

DATA SHEET:

Mini DomiLEDInGaN : DNZP-DJG-I1

© 2005 DomiLED is a trademark of DOMINANT Opto Technologies.All rights reserved. Product specifications are subject to change without notice.

Applications:> Automotive: interior applications, eg: switches, telematics, climate control system, dashboard, etc.> Communication: indicator and backlight in mobilephone.> Display: full color display video notice board.> Industry: white goods (eg: Oven, microwave, etc.).

DOMINANTOpto TechnologiesInnovating Illumination

TM

06/04/2017 V3.02

InGaN : DNZP-DJG-I1

Part OrderingNumber

Color ViewingAngle˚

Luminous Intensity @ IF = 10mA IV (mcd) Appx. 1.1

DNZP-DJG-RS1-1-I1 InGaN Pure Green 120 112.5

Electrical Characteristics at Tj=250CVf @ If = 10 mA Appx. 3.1

3.0

Part NumberMin. (V) Typ. (V) Max. (V)

DNZP-DJG 2.7 3.5

Optical Characteristics at Tj=250C

Min. Typ. Max.

180.0 224.0

Unit

Absolute Maximum RatingsMaximum Value

DC forward current

Peak pulse current; (tp ≤ 10µs, Duty cycle = 0.005)

Reverse voltage

ESD threshold (HBM)

LED junction temperature

Operating temperature

Storage temperature

Power dissipation (at room temperature)

Thermal resistance- Junction / ambient, Rth JA- Junction / solder point, Rth JS(Mounting on FR4 PCB, pad size >= 5 mm2 per pad)

20

100

5

2000

110

-40 … +100

-40 … +100

70

530280

mA

mA

V

V

˚C

˚C

˚C

mW

K/WK/W


TM

Vr @ Ir = 10 µA

5.0

Min. (V)

06/04/2017 V3.03

InGaN : DNZP-DJG-I1DOMINANTOpto TechnologiesInnovating Illumination

TM

CharacteristicsSymbol Part Number Value Unit

Temperature coefficient of VF (typ)IF = 10mA; 0 ˚C <= T <= 100 ˚C

Temperature coefficient of IV (typ)IF = 10mA; 0 ˚C <= T <= 100 ˚C

Temperature coefficient of Cx (typ)IF = 10mA; 0 ˚C <= T <= 100 ˚C

Temperature coefficient of Cy (typ)IF = 10mA; 0 ˚C <= T <= 100 ˚C

TCV

TCIV

TCCx

TCCy

DNZP-DJG

DNZP-DJG

DNZP-DJG

DNZP-DJG

-2.0

-0.28

0.00002

-0.00003

mV / K

% / K

Cx / K

Cy / K

06/04/2017 V3.04


TM

DNZP, Color Grouping Appx. 2.1

Bin

A

B

0.35170.64520.37310.6245

Cx Cy Cx Cy

0.34890.59830.36710.5804

0.36710.58040.38510.5620

0.37310.62450.39450.6036

Color Bin Structure

1 2 3 4

InGaN wavelength is very sensitive to drive current. Operating at lower current is not recommended and may yield unpredictable performance. Current pulsing should be used for dimming purposes.

0.500

0.550

0.600

0.650

0.700

0.300 0.350 0.400 0.450

A

B

21/04/2014 V2.04


TM

DNZP, White Color Grouping

Bin

A

B

0.35170.64520.37310.6245

Cx Cy Cx Cy

0.34890.59830.36710.5804

0.36710.58040.38510.5620

0.37310.62450.39450.6036

Dominant White Bin Structure

Chromaticity coordinate groups are measured with an accuracy of ± 0.01.

1 2 3 4

Dominant color coordinate is measured with an accuracy of ± 0.01.

R1R2S1

112.50 ... 140.00140.00 ... 180.00180.00 ... 224.00

Brightness Group Luminous Intensity Appx. 1.1

IV (mcd)

Luminous Intensity Group at Tj=25˚C


TM

06/04/2017 V3.05

06/04/2017 V3.06


TM

Relative Intensity Vs Forward Current Forward Current Vs Forward Voltage

Forward Current; mA Forward Voltage; V

Rel

ativ

e In

tens

ity; N

orm

aliz

ed a

t 10m

A

Forw

ard

Cur

rent

; mA

Maximum Current Vs Ambient Temperature Relative Intensity Vs Wavelength

Forw

ard

Cur

rent

; mA

Rel

ativ

e In

tens

ity

Ambient Temperature Wavelength; nm

Radiation Pattern

21/04/2014 V2.06

InGaN : DNZP-DJG-I1

Relative Luminous Intensity Vs Forward Current

Forward Current, mA

Rel

ativ

e In

tens

ity

0 10 20 30 40 50

0

0.4

0.8

1.2

1.6

2

2.4

Forward Current Vs Forward Voltage

Forward Voltage, V

Forw

ard

Cur

rent

, mA

2 2.5 3 3.5 4

0

10

20

30

40

50

Maximum Current Vs Ambient Temperature

Ambient temperature

Forw

ard

Cur

rent

, If

0 10 20 30 40 50 60 70 80 90 100

5

10

15

20

25

Relative Intensity Vs. Wavelength

Wavelength, nm

Rel

ativ

e In

tens

ity

400 450 500 550 600 650 700 750 800

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

Radiation Pattern

0.270°

90°

80°

0

60°

50°

40°

30° 20°

0.6

0.4

1.0

0.8

10° 0°


TM

Relative Intensity Vs Forward Current

Forward Current; mA

Rel

ativ

e In

tens

ity; N

orm

aliz

ed a

t 5m

A

0 10 20 30 40 50

0

1

2

3

4

5

6

7

8


Forward Voltage; V

Forw

ard

Cur

rent

; mA

2 2.5 3 3.5 4

0

10

20

30

40

50


Ambient Temperature

Forw

ard

Cur

rent

; mA

0 10 20 30 40 50 60 70 80 90 100

5

10

15

20

25

Relative Intensity Vs Wavelength

Wavelength; nm

Rel

ativ

e In

tens

ity

400 450 500 550 600 650 700 750 800

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1


Forward Current, mA

Rel

ativ

e In

tens

ity

0 10 20 30 40 50

0

0.4

0.8

1.2

1.6

2

2.4


Forward Voltage, V

Forw

ard

Cur

rent

, mA

2 2.5 3 3.5 4

0

10

20

30

40

50


Ambient temperature

Forw

ard

Cur

rent

, If

0 10 20 30 40 50 60 70 80 90 100

5

10

15

20

25


Wavelength, nm

Rel

ativ

e In

tens

ity

400 450 500 550 600 650 700 750 800

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

Rel

ativ

e In

tens

ity; N

orm

aliz

ed a

t 20m

ARelative Intensity Vs Forward Current

Forward Current; mA

Rel

ativ

e In

tens

ity; N

orm

aliz

ed a

t 10m

A

0 10 20 30 40 50

0

1

2

3

4


Forward Voltage; V

Forw

ard

Cur

rent

; mA

2 2.5 3 3.5 4

0

10

20

30

40

50


Ambient Temperature

Forw

ard

Cur

rent

; mA

0 10 20 30 40 50 60 70 80 90 100

0

5

10

15

20

25

Dominant Wavelength Shift Vs Forward Current

Forward Current, mA

0 5 10 15 20 25 30

-4

-2

0

2

4

6

8

10

12


Wavelength, nm

400 450 500 550 600 650 700 750 800

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1


Forward Voltage, V

Variables

IF mA

2 2.5 3 3.5 4

0

10

20

30

40

50


Wavelength, nm

Variables

Relative Intensity

350 400 450 500 550 600 650 700 750 8000

0.10.20.30.40.50.60.70.80.9

1

21/04/2014 V2.06

InGaN : DNZP-DJG-I1


Forward Current, mA

Rel

ativ

e In

tens

ity

0 10 20 30 40 50

0

0.4

0.8

1.2

1.6

2

2.4


Forward Voltage, V

Forw

ard

Cur

rent

, mA

2 2.5 3 3.5 4

0

10

20

30

40

50


Ambient temperature

Forw

ard

Cur

rent

, If

0 10 20 30 40 50 60 70 80 90 100

5

10

15

20

25


Wavelength, nm

Rel

ativ

e In

tens

ity

400 450 500 550 600 650 700 750 800

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

Radiation Pattern

0.270°

90°

80°

0

60°

50°

40°

30° 20°

0.6

0.4

1.0

0.8

10° 0°


TM


Forward Current; mA

Rel

ativ

e In

tens

ity; N

orm

aliz

ed a

t 5m

A

0 10 20 30 40 50

0

1

2

3

4

5

6

7

8


Forward Voltage; V

Forw

ard

Cur

rent

; mA

2 2.5 3 3.5 4

0

10

20

30

40

50


Ambient Temperature

Forw

ard

Cur

rent

; mA

0 10 20 30 40 50 60 70 80 90 100

5

10

15

20

25


Wavelength; nm

Rel

ativ

e In

tens

ity

400 450 500 550 600 650 700 750 800

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1


Forward Current, mA

Rel

ativ

e In

tens

ity

0 10 20 30 40 50

0

0.4

0.8

1.2

1.6

2

2.4


Forward Voltage, V

Forw

ard

Cur

rent

, mA

2 2.5 3 3.5 4

0

10

20

30

40

50


Ambient temperature

Forw

ard

Cur

rent

, If

0 10 20 30 40 50 60 70 80 90 100

5

10

15

20

25


Wavelength, nm

Rel

ativ

e In

tens

ity

400 450 500 550 600 650 700 750 800

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

Rel

ativ

e In

tens

ity; N

orm

aliz

ed a

t 20m


Forward Current; mA

Rel

ativ

e In

tens

ity; N

orm

aliz

ed a

t 10m

A

0 10 20 30 40 50

0

1

2

3

4


Forward Voltage; V

Forw

ard

Cur

rent

; mA

2 2.5 3 3.5 4

0

10

20

30

40

50


Ambient Temperature

Forw

ard

Cur

rent

; mA

0 10 20 30 40 50 60 70 80 90 100

0

5

10

15

20

25


Forward Current, mA

0 5 10 15 20 25 30

-4

-2

0

2

4

6

8

10

12


Wavelength, nm

400 450 500 550 600 650 700 750 800

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1


Forward Voltage, V

Variables

IF mA

2 2.5 3 3.5 4

0

10

20

30

40

50


Wavelength, nm

Variables

Relative Intensity

350 400 450 500 550 600 650 700 750 8000

0.10.20.30.40.50.60.70.80.9

1

21/04/2014 V2.06

InGaN : DNZP-DJG-I1


Forward Current, mA

Rela

tive

Inte

nsity

0 10 20 30 40 50

0

0.4

0.8

1.2

1.6

2

2.4


Forward Voltage, V

Forw

ard

Curr

ent,

mA

2 2.5 3 3.5 4

0

10

20

30

40

50


Ambient temperature

Forw

ard

Curr

ent,

If

0 10 20 30 40 50 60 70 80 90 100

5

10

15

20

25


Wavelength, nm

Rela

tive

Inte

nsity

400 450 500 550 600 650 700 750 800

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

Radiation Pattern

0.270°

90°

80°

0

60°

50°

40°

30° 20°

0.6

0.4

1.0

0.8

10° 0°


TM


Forward Current; mA

Rela

tive

Inte

nsity

; Nor

mal

ized

at 5

mA

0 10 20 30 40 50

0

1

2

3

4

5

6

7

8


Forward Voltage; V

Forw

ard

Curr

ent;

mA

2 2.5 3 3.5 4

0

10

20

30

40

50


Ambient Temperature

Forw

ard

Curr

ent;

mA

0 10 20 30 40 50 60 70 80 90 100

5

10

15

20

25


Wavelength; nm

Rela

tive

Inte

nsity

400 450 500 550 600 650 700 750 800

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1


Forward Current, mA

Rela

tive

Inte

nsity

0 10 20 30 40 50

0

0.4

0.8

1.2

1.6

2

2.4


Forward Voltage, V

Forw

ard

Curr

ent,

mA

2 2.5 3 3.5 4

0

10

20

30

40

50


Ambient temperature

Forw

ard

Curr

ent,

If

0 10 20 30 40 50 60 70 80 90 100

5

10

15

20

25


Wavelength, nm

Rela

tive

Inte

nsity

400 450 500 550 600 650 700 750 800

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

Rela

tive

Inte

nsity

; Nor

mal

ized

at 2

0mA


Forward Current; mA

Rela

tive

Inte

nsity

; Nor

mal

ized

at 1

0mA

0 10 20 30 40 50

0

1

2

3

4


Forward Voltage; V

Forw

ard

Curr

ent;

mA

2 2.5 3 3.5 4

0

10

20

30

40

50


Ambient Temperature

Forw

ard

Curr

ent;

mA

0 10 20 30 40 50 60 70 80 90 100

0

5

10

15

20

25


Forward Current, mA

0 5 10 15 20 25 30

-4

-2

0

2

4

6

8

10

12


Wavelength, nm

400 450 500 550 600 650 700 750 800

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1


Forward Voltage, V

Variables

IF mA

2 2.5 3 3.5 4

0

10

20

30

40

50


Wavelength, nm

Variables

Relative Intensity

350 400 450 500 550 600 650 700 750 8000

0.10.20.30.40.50.60.70.80.9

1

21/04/2014 V2.06

InGaN : DNZP-DJG-I1


Forward Current, mA

Rel

ativ

e In

tens

ity

0 10 20 30 40 50

0

0.4

0.8

1.2

1.6

2

2.4


Forward Voltage, V

Forw

ard

Cur

rent

, mA

2 2.5 3 3.5 4

0

10

20

30

40

50


Ambient temperature

Forw

ard

Cur

rent

, If

0 10 20 30 40 50 60 70 80 90 100

5

10

15

20

25


Wavelength, nm

Rel

ativ

e In

tens

ity

400 450 500 550 600 650 700 750 800

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

Radiation Pattern

0.270°

90°

80°

0

60°

50°

40°

30° 20°

0.6

0.4

1.0

0.8

10° 0°


TM


Forward Current; mA

Rel

ativ

e In

tens

ity; N

orm

aliz

ed a

t 5m

A

0 10 20 30 40 50

0

1

2

3

4

5

6

7

8


Forward Voltage; V

Forw

ard

Cur

rent

; mA

2 2.5 3 3.5 4

0

10

20

30

40

50


Ambient Temperature

Forw

ard

Cur

rent

; mA

0 10 20 30 40 50 60 70 80 90 100

5

10

15

20

25


Wavelength; nm

Rel

ativ

e In

tens

ity

400 450 500 550 600 650 700 750 800

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1


Forward Current, mA

Rel

ativ

e In

tens

ity

0 10 20 30 40 50

0

0.4

0.8

1.2

1.6

2

2.4


Forward Voltage, V

Forw

ard

Cur

rent

, mA

2 2.5 3 3.5 4

0

10

20

30

40

50


Ambient temperature

Forw

ard

Cur

rent

, If

0 10 20 30 40 50 60 70 80 90 100

5

10

15

20

25


Wavelength, nm

Rel

ativ

e In

tens

ity

400 450 500 550 600 650 700 750 800

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

Rel

ativ

e In

tens

ity; N

orm

aliz

ed a

t 20m


Forward Current; mA

Rel

ativ

e In

tens

ity; N

orm

aliz

ed a

t 10m

A

0 10 20 30 40 50

0

1

2

3

4


Forward Voltage; V

Forw

ard

Cur

rent

; mA

2 2.5 3 3.5 4

0

10

20

30

40

50


Ambient Temperature

Forw

ard

Cur

rent

; mA

0 10 20 30 40 50 60 70 80 90 100

0

5

10

15

20

25


Forward Current, mA

0 5 10 15 20 25 30

-4

-2

0

2

4

6

8

10

12


Wavelength, nm

400 450 500 550 600 650 700 750 800

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1


Forward Voltage, V

Variables

IF mA

2 2.5 3 3.5 4

0

10

20

30

40

50


Wavelength, nm

Variables

Relative Intensity

350 400 450 500 550 600 650 700 750 8000

0.10.20.30.40.50.60.70.80.9

1

08/12/2016 V7.09

InGaN Warm White: DDF-LJGDOMINANTOpto TechnologiesInnovating Illumination

TM

Radiation Pattern

Junction Temperature Tj(°C)

Rel

ativ

e Fo

rwar

d Vo

ltage

∆V F (

V)


Rel

ativ

e Lu

min

ous

Inte

nsity

I rel

Relative Luminous Intensity Vs Junction TemperatureIV/IV(25°C) = f(Tj); IF = 20mA


∆Cx

, ∆C

y

Chromaticity Coordinate Shift Vs Junction Temperature∆Cx, ∆Cy = f(Tj); IF = 20mA

0.270°

90°

80°

0

60°

50°

40°

30° 20°

0.6

0.4

1.0

0.8

10° 0°

-0.5

-0.4

-0.3

-0.2

-0.1

0.0

0.1

0.2

0.3

0.4

0.5

-50 -30 -10 10 30 50 70 90 110 1300.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-50 -30 -10 10 30 50 70 90 110 130

Rel

ativ

e Fo

rwar

d Vo

ltage

∆V F

(V)

Relative Forward Voltage Vs Junction Temperature∆VF = VF - VF(25°C) = f(Tj); IF = 20mA

Junction Temperature Tj(°C) Junction Temperature Tj(°C)

Relative Luminous Intensity Vs Junction TemperatureIV /IV (25°C) = f(Tj); IV = 20mA

Rel

ativ

e Lu

min

ous

Inte

nsity

I rel

-0.5

-0.4

-0.3

-0.2

-0.1

0.0

0.1

0.2

0.3

0.4

0.5

-50 -30 -10 10 30 50 70 90 110 1300.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-50 -30 -10 10 30 50 70 90 110 130

Rel

ativ

e Fo

rwar

d Vo

ltage

∆V F

(V)

Relative Forward Voltage Vs Junction Temperature∆VF = VF - VF(25°C) = f(Tj); IF = 20mA


Relative Luminous Intensity Vs Junction TemperatureIV /IV (25°C) = f(Tj); IV = 20mA

Rel

ativ

e Lu

min

ous

Inte

nsity

I rel

Relative Forward Voltage Vs Junction Temperature∆VF = VF - VF(25°C) = f(Tj); IF =20mA

-10.0

-8.0

-6.0

-4.0

-2.0

0.0

2.0

4.0

6.0

8.0

10.0

-50 -30 -10 10 30 50 70 90 110 130

∆Cx

∆Cy

-0.030

-0.025

-0.020

-0.015

-0.010

-0.005

0.000

0.005

0.010

0.015

0.020

0.025

0.030

-50 -30 -10 10 30 50 70 90 110 130

Rel

ativ

e W

avel

engt

h ∆λ

dom

(nm

)

Relative Wavelength Vs Junction Temperature∆λdom = λdom - λdom (25°C) = f(Tj); IF = 20mA

∆Cx,

∆C

y

Chromaticity Coordinate Shift Vs Junction Temperature∆Cx, ∆Cy = f(Tj); IF = 20mA


InGaN : DNZP-DJG-I1

06/04/2017 V3.07

Mini DomiLED • InGaN : DNZP-DJG-I1 Package Outlines


TM

Material

Material

Lead-frame

Package

Encapsulant Soldering Leads

Cu Alloy With Ag Plating

High Temperature Resistant Plastic, PPA

Silicone

Sn Plating

14/06/2016 V3.08

PrimaxPlus • 180 InGaN White: MBWW-KZHG Package Outlines

Material

Material

Lead-frame

Package


Cu Alloy With Au Plating

High Temperature Resistant Plastic

Silicone Resin

Au Plating

Note: This product is Pb free

180 InGaN White: MBWW-KZHGDOMINANTOpto TechnologiesInnovating Illumination

TM

Note : Primary thermal path is through Cathode lead of LED package.

12/10/2016 V3.0

7

PrimaxPlus • 350 InGaN Yellow: MAZY-YZHG Package Outlines

Material

Material

Lead-frame

Package

Encapsulant

Soldering Leads



Silicone

Au Plating

DOMINANT

Opto Technologies

Innovating IlluminationTM


350 InGaN Yellow: MAZY-YZHG


DOMINANT Opto Technologies

09/05/14

PrimaxPlus 350 InGaN White MAW-YZHG -pv3.docx

Page 1 of 9

PRELIMINARY

UNDER DEVELOPMENT

Engineering reference data are not verified. The specifications are subject to

change without notice.

Super high brightness surface mount LED for automotive applications.

120 viewing angle.

Compact package outline (LxW) of 3.7 x 3.5 mm.

Ultra low height profile – 0.8 mm.

Low thermal resistance;

Superior corrosion robustness.

Compatible to IR reflow soldering.

PrimaxPlus 350mA White: MAW-YZHG 31/05/2013 V1.0

7

Primax • 175 InGaN White: MBWW-FSC Package Outlines

Material

Material

Lead-frame

Package

Encapsulant

Soldering Leads



Silicone Resin

Ag Plating

DOMINANT

Opto Technologies



175 InGaN White: MBWW-FSC

18/04/2016 V1.0

8

PrimaxPlus 100 InGaN White: PQW-SSG Package OutlinesInGaN White: PQW-SSG

DOMINANT

Opto Technologies


Material

Material

Lead-frame

Package

Encapsulant

Soldering Leads



Silicone Resin

Sn Plating



24/09/13

PrimaxPlus 100 InGaN Warm White MAF-PSC -pv3.docx

Page 1 of 14

PRELIMINARY

UNDER DEVELOPMENT



Super high brightness surface mount LED.

120 viewing angle.



Low thermal resistance.


PrimaxPlus 100mA Warm White: MAF-PSC

Note : Primary thermal path is through Cathode lead of LED package

InGaN Warm White: DDF-LJG08/12/2016 V7.0

10

DomiLED • InGaN Warm White: DDF-LJG Package Outlines

Material

Material

Lead-frame

Package

Encapsulant

Soldering Leads



Silicone Resin

Sn-Sn Plating

DOMINANT

Opto Technologies



07/07/2011 V4.0

6

SPNovaTM • InGaN White : NPW-RSZ Package Outlines

InGaN White : NPW-RSZ

Material

Material

Lead-frame

Package

Encapsulant

Soldering Leads



Silicone Resin

Sn-Sn Plating

DOMINANT

Opto Technologies


07/07/2011 V4.06



Material

Material

Lead-frame

Package




Silicone Resin

Sn-Sn Plating


TM

12/10/2016 V3.07


Material

Material

Lead-frame

Package




Silicone

Au Plating


TM





09/05/14 PrimaxPlus 350 InGaN White MAW-YZHG -pv3.docx Page 1 of 9

PRELIMINARY UNDER DEVELOPMENT

Engineering reference data are not verified. The specifications are subject to change without notice.


120 viewing angle.






PrimaxPlus 350mA White: MAW-YZHG

31/05/2013 V1.07


Material

Material

Lead-frame

Package




Silicone Resin

Ag Plating


TM



18/04/2016 V1.08

PrimaxPlus 100 InGaN White: PQW-SSG Package Outlines

InGaN White: PQW-SSGDOMINANTOpto TechnologiesInnovating Illumination

TM

Material

Material

Lead-frame

Package




Silicone Resin

Sn Plating



24/09/13 PrimaxPlus 100 InGaN Warm White MAF-PSC -pv3.docx Page 1 of 14




120 viewing angle.







InGaN Warm White: DDF-LJG

08/12/2016 V7.010


Material

Material

Lead-frame

Package




Silicone Resin

Sn-Sn Plating


TM


07/07/2011 V4.06



Material

Material

Lead-frame

Package




Silicone Resin

Sn-Sn Plating


TM

07/07/2011 V4.06



Material

Material

Lead-frame

Package




Silicone Resin

Sn-Sn Plating


TM

12/10/2016 V3.07


Material

Material

Lead-frame

Package




Silicone

Au Plating


TM









120 viewing angle.







31/05/2013 V1.07


Material

Material

Lead-frame

Package




Silicone Resin

Ag Plating


TM



18/04/2016 V1.08



TM

Material

Material

Lead-frame

Package




Silicone Resin

Sn Plating







120 viewing angle.








08/12/2016 V7.010


Material

Material

Lead-frame

Package




Silicone Resin

Sn-Sn Plating


TM


07/07/2011 V4.06



Material

Material

Lead-frame

Package




Silicone Resin

Sn-Sn Plating


TM

07/07/2011 V4.06



Material

Material

Lead-frame

Package




Silicone Resin

Sn-Sn Plating


TM

12/10/2016 V3.07


Material

Material

Lead-frame

Package




Silicone

Au Plating


TM









120 viewing angle.







31/05/2013 V1.07


Material

Material

Lead-frame

Package




Silicone Resin

Ag Plating


TM



18/04/2016 V1.08



TM

Material

Material

Lead-frame

Package




Silicone Resin

Sn Plating







120 viewing angle.








08/12/2016 V7.010


Material

Material

Lead-frame

Package




Silicone Resin

Sn-Sn Plating


TM


07/07/2011 V4.06



Material

Material

Lead-frame

Package




Silicone Resin

Sn-Sn Plating


TM

07/07/2011 V4.06



Material

Material

Lead-frame

Package




Silicone Resin

Sn-Sn Plating


TM

12/10/2016 V3.0

7


Material

Material

Lead-frame

Package

Encapsulant

Soldering Leads



Silicone

Au Plating

DOMINANT

Opto Technologies






09/05/14

PrimaxPlus 350 InGaN White MAW-YZHG -pv3.docx

Page 1 of 9

PRELIMINARY

UNDER DEVELOPMENT




120 viewing angle.






PrimaxPlus 350mA White: MAW-YZHG 31/05/2013 V1.0

7


Material

Material

Lead-frame

Package

Encapsulant

Soldering Leads



Silicone Resin

Ag Plating

DOMINANT

Opto Technologies




18/04/2016 V1.0

8

PrimaxPlus 100 InGaN White: PQW-SSG Package OutlinesInGaN White: PQW-SSG

DOMINANT

Opto Technologies


Material

Material

Lead-frame

Package

Encapsulant

Soldering Leads



Silicone Resin

Sn Plating



24/09/13

PrimaxPlus 100 InGaN Warm White MAF-PSC -pv3.docx

Page 1 of 14

PRELIMINARY

UNDER DEVELOPMENT




120 viewing angle.







InGaN Warm White: DDF-LJG08/12/2016 V7.0

10


Material

Material

Lead-frame

Package

Encapsulant

Soldering Leads



Silicone Resin

Sn-Sn Plating

DOMINANT

Opto Technologies



07/07/2011 V4.0

6



Material

Material

Lead-frame

Package

Encapsulant

Soldering Leads



Silicone Resin

Sn-Sn Plating

DOMINANT

Opto Technologies


07/07/2011 V4.06



Material

Material

Lead-frame

Package




Silicone Resin

Sn-Sn Plating


TM

12/10/2016 V3.07


Material

Material

Lead-frame

Package




Silicone

Au Plating


TM









120 viewing angle.







31/05/2013 V1.07


Material

Material

Lead-frame

Package




Silicone Resin

Ag Plating


TM



18/04/2016 V1.08



TM

Material

Material

Lead-frame

Package




Silicone Resin

Sn Plating







120 viewing angle.








08/12/2016 V7.010


Material

Material

Lead-frame

Package




Silicone Resin

Sn-Sn Plating


TM


07/07/2011 V4.06



Material

Material

Lead-frame

Package




Silicone Resin

Sn-Sn Plating


TM

07/07/2011 V4.06



Material

Material

Lead-frame

Package




Silicone Resin

Sn-Sn Plating


TM

12/10/2016 V3.07


Material

Material

Lead-frame

Package




Silicone

Au Plating


TM









120 viewing angle.







31/05/2013 V1.07


Material

Material

Lead-frame

Package




Silicone Resin

Ag Plating


TM



18/04/2016 V1.08



TM

Material

Material

Lead-frame

Package




Silicone Resin

Sn Plating







120 viewing angle.








08/12/2016 V7.010


Material

Material

Lead-frame

Package




Silicone Resin

Sn-Sn Plating


TM


07/07/2011 V4.06



Material

Material

Lead-frame

Package




Silicone Resin

Sn-Sn Plating


TM

07/07/2011 V4.06



Material

Material

Lead-frame

Package




Silicone Resin

Sn-Sn Plating


TMNote : Primary thermal path is through Cathode lead of LED package

06/04/2017 V3.08

InGaN : DNZP-DJG-I1

Recommended Solder Pad


TM

DOMINANT Semiconductors

11/05/10 Mini DomiLED InGaN White DNW-DZJG - Catalogue-pv3 Page 5 of 9



Recommended Solder Pad

06/04/2017 V3.09

Taping and orientation

• Reels come in quantity of 3000 units.• Reel diameter is 180 mm.


TM

06/04/2017 V3.010

Packaging Specification


TM

08/12/2016 V7.013


InGaN Warm White: DDF-LJGDOMINANTOpto TechnologiesInnovating Illumination

TM

06/04/2017 V3.011


TM


Average 1pc Mini DomiLED 1 completed bag (3000pcs)

0.034 190 ± 10Weight (gram)

CardboardBox

Dimensions (mm) Empty BoxWeight (kg)

Super Small

Small

Medium

Large

For Mini DomiLED

Reel / BoxCardboard BoxSize

Weight (gram) 0.007 200 ± 10

DOMINANT TM

Moisture sensitivity level

Moisture absorbent material +Moisture indicator

The reel, moisture absorbent material and moisture indicator aresealed inside the moisture proof foil bag

Reel

Barcode label

Label

(L) Lot No : lotno

(P) Part No : partno

(C) Cust No : partno

(G) Grouping : group

(Q) Quantity : quantity

(D) D/C : date code

(S) S/N : serial no

DOMINANT Opto TechnologiesML TEMP2 260˚CRoHS Compliant

Made in Malaysia

325 x 225 x 190

325 x 225 x 280

570 x 440 x 230

570 x 440 x 460

0.38

0.54

1.46

1.92

9 reels MAX

15 reels MAX

60 reels MAX

120 reels MAX

06/04/2017 V3.012

Time (sec)0 50 100 150 200

300

250

225

200

175

150

125

100

75

50

25

275

Tem

pera

ture

(˚C

)Classification Reflow Profile (JEDEC J-STD-020C)

Ramp-up3˚C/sec max.

255-260˚C10-30s

60-150s

Ramp-down

6˚C/secmax.

Preheat 60-180s

480s max

217˚C

Recommended Pb-free Soldering Profile


TM

06/04/2017 V3.013


TM

Appendix

1) Brightness:1.1 Luminous intensity is measured with an internal reproducibility of ± 8 % and an expanded uncertainty of ± 11 % (according to GUM with a coverage factor of k=3).1.2 Luminous flux is measured with an internal reproducibility of ± 8 % and an expanded uncertainty of ± 11 % (according to GUM with a coverage factor of k=3).

2) Color:2.1 Chromaticity coordinate groups are measured with an internal reproducibility of ± 0.005 and an expanded uncertainty of ± 0.01 (accordingly to GUM with a coverage factor of k=3).2.2 DOMINANT wavelength is measured with an internal reproducibility of ± 0.5nm and an expanded uncertainty of ± 1nm (accordingly to GUM with a coverage factor of k=3).

3) Voltage:3.1 Forward Voltage, Vf is measured with an internal reproducibility of ± 0.05V and an expanded uncertainty of ± 0.1V (accordingly to GUM with a coverage factor of k=3).

4) Corrosion Robustness:4.1 Test conditions: 40 °C / 90 % rh / 15 ppm H2S / 336 h. = Stricter than IEC 60068-2-43 (H2S) [25 °C / 75% rh / 10 ppm H2S / 21 days].

Revision History

Page

-

2, 3

1, 9, 11, 13

Subjects

Initial Release

Add Thermal ResistanceAdd Characteristics

Add FeaturesError on Taping and OrientationUpdate Package Specification

Add Appendix

Date of Modification

24 Jan 2014

21 Apr 2014

06 Apr 2017

InGaN : DNZP-DJG-I1

06/04/2017 V3.014


TM

NOTE

All the information contained in this document is considered to be reliable at the time of publishing. However, DOMINANT

Opto Technologies does not assume any liability arising out of the application or use of any product described herein.

DOMINANT Opto Technologies reserves the right to make changes to any products in order to improve reliability, function

or design.

DOMINANT Opto Technologies products are not authorized for use as critical components in life support devices or systems

without the express written approval from the Managing Director of DOMINANT Opto Technologies.

InGaN : DNZP-DJG-I1

About Us


TM

DOMINANT Opto Technologies is a dynamic company that is amongst the world’s leading automotive LED manufac-turers. With an extensive industry experience and relentless pursuit of innovation, DOMINANT’s state-of-art manu-facturing and development capabilities have become a trusted and reliable brand across the globe. More information about DOMINANT Opto Technologies, a ISO/TS 16949 and ISO 14001 certified company, can be found under http://www.dominant-semi.com.

Please contact us for more information:

DOMINANT Opto Technologies Sdn. BhdLot 6, Batu Berendam, FTZ Phase III, 75350 Melaka, Malaysia.Tel: +606 283 3566 Fax: +606 283 0566E-mail: [email protected]

Documents

DOMINANT TM Opto Technologies Mini DomiLED … the intense colors that seem to glow with energy and its ... Normalized at 10mA Forward Current; mA ... Forward Current; mA 0 10 20 30