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DMT 121 – ELECTRONIC 1 Chapter 4 DC Biasing – Bipolar Junction Transistors (BJTs)

DMT 121 – ELECTRONIC 1 Chapter 4 DC Biasing – Bipolar Junction Transistors (BJTs)

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Page 1: DMT 121 – ELECTRONIC 1 Chapter 4 DC Biasing – Bipolar Junction Transistors (BJTs)

DMT 121 – ELECTRONIC 1

Chapter 4

DC Biasing – Bipolar Junction Transistors (BJTs)

Page 2: DMT 121 – ELECTRONIC 1 Chapter 4 DC Biasing – Bipolar Junction Transistors (BJTs)

OBJECTIVES Discuss the concept of dc biasing of a transistor Analyze voltage-divider bias, base bias, emitter

bias and collector-feedback bias circuits. Basic troubleshooting for transistor bias circuits.

Page 3: DMT 121 – ELECTRONIC 1 Chapter 4 DC Biasing – Bipolar Junction Transistors (BJTs)

INTRODUCTION For the transistor to properly operate it must be

biased. There are several methods to establish the DC operating point.

We will discuss some of the methods used for biasing transistors as well as troubleshooting methods used for transistor bias circuits.

Page 4: DMT 121 – ELECTRONIC 1 Chapter 4 DC Biasing – Bipolar Junction Transistors (BJTs)

BIASING & 3 STATES OF OPERATION Active or Linear Region Operation

Base–Emitter junction is forward biasedBase–Collector junction is reverse biased

Cutoff Region OperationBase–Emitter junction is reverse biased

Saturation Region Operation

Base–Emitter junction is forward biased

Base–Collector junction is forward biased

Page 5: DMT 121 – ELECTRONIC 1 Chapter 4 DC Biasing – Bipolar Junction Transistors (BJTs)

DC OPERATING POINTThe goal of amplification in most cases is to increase the amplitude of an ac signal without altering it.

Page 6: DMT 121 – ELECTRONIC 1 Chapter 4 DC Biasing – Bipolar Junction Transistors (BJTs)

DC OPERATING POINT

For a transistor circuit to amplify it must be properly biased with dc voltages. The dc operating point between saturation and cutoff is called the Q-point. The goal is to set the Q-point such that that it does not go into saturation or cutoff when an a ac signal is applied.

IB IC and VCE

IB IC and VCE

Page 7: DMT 121 – ELECTRONIC 1 Chapter 4 DC Biasing – Bipolar Junction Transistors (BJTs)

DC OPERATING POINT

Recall that the collector characteristic curves graphically show the relationship of collector current and VCE for different base currents. With the dc load line superimposed across the collector curves for this particular transistor we see that 30 mA (IB = 300 A) of collector current is best for maximum amplification, giving equal amount above and below the Q-point. Note that this is three different scenarios of collector current being viewed simultaneously.

Page 8: DMT 121 – ELECTRONIC 1 Chapter 4 DC Biasing – Bipolar Junction Transistors (BJTs)

DC OPERATING POINT

With a good Q-point established, look at the effect of superimposed ac voltage has on the circuit. Note the collector current swings do not exceed the limits of operation (saturation and cutoff). However, as you might already know, applying too much ac voltage to the base would result in driving the collector current into saturation or cutoff resulting in a distorted or clipped waveform.

Page 9: DMT 121 – ELECTRONIC 1 Chapter 4 DC Biasing – Bipolar Junction Transistors (BJTs)

Key terms DC Load LineA straight line plot of IC and VCE for a transistor

circuit.

Q-pointDC operating point along line between

saturation and cutoff

Linear RegionA region of operation along the load line

between saturation and cutoff

Page 10: DMT 121 – ELECTRONIC 1 Chapter 4 DC Biasing – Bipolar Junction Transistors (BJTs)

WAVEFORM DISTORTION

Graphical load line illustration of a transistor being driven into saturation and/or cutoff

Page 11: DMT 121 – ELECTRONIC 1 Chapter 4 DC Biasing – Bipolar Junction Transistors (BJTs)

WAVEFORM DISTORTION

Page 12: DMT 121 – ELECTRONIC 1 Chapter 4 DC Biasing – Bipolar Junction Transistors (BJTs)

FIXED-BIAS (BASE-BIAS) CIRCUIT

Simplest transistor bias configuration. Commonly used in relay driver circuits. Extremely beta-dependant and very unstable

Fixed-bias circuit. DC equivalent circuit.

Page 13: DMT 121 – ELECTRONIC 1 Chapter 4 DC Biasing – Bipolar Junction Transistors (BJTs)

FIXED-BIAS (BASE-BIAS) CIRCUIT

B

BECCB

BEBBCC

R

VVI

VRIV

0

B

BECCC

R

VVI

VCC – ICRC – VCE = 0

VCE = VCC – ICRC; then

= VC – VE since VE = 0

VCE = VC

Measuring VCE and VC.

VBE = VB – VE (since VE = 0)

VBE = VB

Since IC = IB, then

C

CECCC

R

VVI

Base – Emitter loop Collector – Emitter loop

Sensitive to Beta

Page 14: DMT 121 – ELECTRONIC 1 Chapter 4 DC Biasing – Bipolar Junction Transistors (BJTs)

Fixed-bias (base-bias) - SummaryCircuit recognition : A single resistor (RB) between the base terminal and VCC. No emitter resistor.

Q-point stability : Q-point is more dependent on βdc, so it becomes β

dependent and unpredictable. Βdc varies with temperature and IC.

Advantage: Circuit simplicity.

Disadvantage: Q-point shift with temperature

Applications: Switching circuits only. Rarely used in linear operation.

Page 15: DMT 121 – ELECTRONIC 1 Chapter 4 DC Biasing – Bipolar Junction Transistors (BJTs)

Cont’d Summary

(sat )

(off )

CCC

C

CE CC

VI

R

V V

Load line equations:

Q-point equations:

B

BECCC

R

VVI

CCCCCE RIVV

B

BECCB

R

VVI

Page 16: DMT 121 – ELECTRONIC 1 Chapter 4 DC Biasing – Bipolar Junction Transistors (BJTs)

EXAMPLEGiven that VBE = 0.7 V and βDC = 100, determine the Q-point values

Page 17: DMT 121 – ELECTRONIC 1 Chapter 4 DC Biasing – Bipolar Junction Transistors (BJTs)

EXAMPLE

Given that VBE = 0.7 V, RB=22kΩ, RC=100 Ω and βDC = 90, determine the Q-point values

Page 18: DMT 121 – ELECTRONIC 1 Chapter 4 DC Biasing – Bipolar Junction Transistors (BJTs)

EMITER BIAS

Use both a positive and a negative supply voltage on emitter or it just contain an emitter resistor to improve stability level over fixed – bias configuration.

BJT bias circuit with emitter resistor.

An npn transistor with emitter bias. Polarities are reversed for a pnp transistor. Single subscripts indicate voltages with respect to ground.

Page 19: DMT 121 – ELECTRONIC 1 Chapter 4 DC Biasing – Bipolar Junction Transistors (BJTs)

EMITER BIAS – only RE

Collector – Emitter loop

VCC – ICRC – VCE – IERE = 0

IE IC

VCC – ICRC – VCE –ICRE = 0

VCC – VCE = IC (RC + RE)

EB

BECCB

RR

VVI

)1(

EB

BECCC

RR

VVI

)1(

)(

BJT bias circuit with emitter resistor.

Base – Emitter loop

VCC – IBRB – VBE – IERE = 0

IE = ( + 1) IB

Then, VCC – IBRB – VBE – ( + 1)IBRE = 0.

Less sensitivity to beta

Since IC = IB, so IC also equivalent to

EC

CECCC

RR

VVI

Page 20: DMT 121 – ELECTRONIC 1 Chapter 4 DC Biasing – Bipolar Junction Transistors (BJTs)

EMITER BIAS –RE + DC Voltage Supply

EB

BEEEB

RR

VVI

)1(

EC

EECECCC

RR

VVVI

Base – Emitter loop

VEE + IBRB + VBE + IERE = 0

IE = ( + 1) IB

Then, VEE + IBRB + VBE + ( + 1)IBRE = 0.

Less sensitivity to beta

EB

BEEEC

RR

VVI

)1(

)(

Collector – Emitter loop

VCC – ICRC – VCE – IERE + VEE = 0

IE IC

VCC – ICRC – VCE –ICRE + VEE = 0

VCC – VCE + VEE = IC (RC + RE)

Page 21: DMT 121 – ELECTRONIC 1 Chapter 4 DC Biasing – Bipolar Junction Transistors (BJTs)

EMITTER BIAS - Summary

Circuit recognition:

Dual-polarity power supply (+ve and -ve) and the base resistor is connected to ground.

Stability :

Adding RE to the emitter improves the stability of a transistor

Stability refers to a bias circuit in which the currents and voltages will remain fairly constant for a wide range of temperatures and transistor Beta () values.

Advantage: The circuit Q-point values are stable against changes in β.

Disadvantage: Requires the use of dual-polarity power supply.

Applications: Used primarily to bias linear amplifiers.

Page 22: DMT 121 – ELECTRONIC 1 Chapter 4 DC Biasing – Bipolar Junction Transistors (BJTs)

EMITTER BIAS - SummaryWith only Resistor at Emitter

With DC Voltage supply + Resistor at Emitter

EB

BEEEB

RR

VVI

)1(

EC

EECECCC

RR

VVVI

EB

BEEEC

RR

VVI

)1(

)(

EC

CECCC

RR

VVI

EB

BECCC

RR

VVI

)1(

)(

EB

BECCB

RR

VVI

)1(

LOOP CE LOOP CELOOP BELOOP BE

Since IC = βIB , so Since IC = βIB , so

Page 23: DMT 121 – ELECTRONIC 1 Chapter 4 DC Biasing – Bipolar Junction Transistors (BJTs)

EMITTER BIAS - Summary

EB

BEEEC

RR

VVI

Less sensitivity to beta or independent to beta

Previous analysis we use IE = ( + 1) IB; but if use IE IC IB, then from previous slide we can get.

OR we also can use ( + 1) to get the same result.

•If RE >>> RB/ then we can drop RB/ in equation

E

BEEEC

R

VVI

•If VEE >>> VBE then

E

EEC

R

VI

Independent to VBE

Page 24: DMT 121 – ELECTRONIC 1 Chapter 4 DC Biasing – Bipolar Junction Transistors (BJTs)

EMITTER BIAS - SummaryLoad line equations:

Q-point equations:

EB

CCEEC

RR

VVI

)1(

EEECCCCCE VRRIVV )(

EB

CCEEB

RR

VVI

)1(

(sat )

( )CC EE CC EEC

C E C E

V V V VI

R R R R

( )CE off CC EE CC EEV V V V V

Page 25: DMT 121 – ELECTRONIC 1 Chapter 4 DC Biasing – Bipolar Junction Transistors (BJTs)

EMITTER BIAS - SummaryVoltage with respect to ground :

Emitter voltage;VE = VEE+IERE

Base voltage;VB = VE + VBE

Collector voltage;VC = VCC - ICRC

Page 26: DMT 121 – ELECTRONIC 1 Chapter 4 DC Biasing – Bipolar Junction Transistors (BJTs)

EXAMPLE Given that Vcc = +12V, VEE = -12V, RB=100kΩ,

RC=750 Ω, RE =1.5kΩ, β=200. Find the value of IB,IE and VCE

Page 27: DMT 121 – ELECTRONIC 1 Chapter 4 DC Biasing – Bipolar Junction Transistors (BJTs)

EXAMPLE

Given that Vcc = 5V, VEE = -5V, RB=10kΩ, RC=1.0k Ω, RE =2.2kΩ, β=100. Find the voltage of terminal with respect to ground

Page 28: DMT 121 – ELECTRONIC 1 Chapter 4 DC Biasing – Bipolar Junction Transistors (BJTs)

EXAMPLEFrom previous Figure, Find the voltage of

terminal with respect to ground