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Development of Long-Range UHF-band RFI D Tag chip Using Schottky Diodes in St andard CMOS Technology Nhan Tran, Bomson Lee, and Jong-Wook Lee School of Electronics and Informatio n, Kyung Hee University, 446-701, Ko rea Student : Shu-Xian Liao Student Number : m9866200 Advisor :Chih-Ming Lin

Development of Long-Range UHF-band RFID Tag chip Using Schottky Diodes in Standard CMOS Technology Nhan Tran, Bomson Lee, and Jong-Wook Lee School of Electronics

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Page 1: Development of Long-Range UHF-band RFID Tag chip Using Schottky Diodes in Standard CMOS Technology Nhan Tran, Bomson Lee, and Jong-Wook Lee School of Electronics

Development of Long-Range UHF-band RFID Tag chip Using Schottky Diodes in Standard CMOS T

echnology

Nhan Tran, Bomson Lee, and Jong-Wook Lee

School of Electronics and Information, Kyung Hee University, 446-701, Korea

Student : Shu-Xian Liao Student Number : m98662007

Advisor :Chih-Ming Lin

Page 2: Development of Long-Range UHF-band RFID Tag chip Using Schottky Diodes in Standard CMOS Technology Nhan Tran, Bomson Lee, and Jong-Wook Lee School of Electronics

I. INTRODUCTION

II. RFID READING RANGE ANALYSIS

III. VOLTAGE MULTIPLIER USING SCHOTTKY DIODES

IV. ASK DEMODULATOR

V. OSCILLATOR WITH DIGITAL CALIBRATION

VI. CONCLUSION

OutlineOutline

Page 3: Development of Long-Range UHF-band RFID Tag chip Using Schottky Diodes in Standard CMOS Technology Nhan Tran, Bomson Lee, and Jong-Wook Lee School of Electronics

I. INTRODUCTION

II. RFID READING RANGE ANALYSIS

III. VOLTAGE MULTIPLIER USING SCHOTTKY DIODES

IV. ASK DEMODULATOR

V. OSCILLATOR WITH DIGITAL CALIBRATION

VI. CONCLUSION

OutlineOutline

Page 4: Development of Long-Range UHF-band RFID Tag chip Using Schottky Diodes in Standard CMOS Technology Nhan Tran, Bomson Lee, and Jong-Wook Lee School of Electronics

Introduction In this paper, we present the characteristics of the Schottky diodes fabricated u

sing Titanium (Ti/Al/Ta/Al)-Silicon (ntype) junction in 0.35 μm CMOS process, and the effect of the size of Schottky diode on the turn-on voltage and the input impedance of the voltage multiplier was investigated.

Based on the measured results of the Schottky diodes, we have designed and tested two key building blocks for UHF-band RFID tag, high efficiency voltage multiplier, and ASK demodulator.

propose architecture for the tag clock generator with digital calibration that allows the transfer of the precise RFID reader timing information to the tag.

Finally, an analysis for long-range RFID tag design considering the limitation caused by the turn-on voltage of tag chip is presented.

Page 5: Development of Long-Range UHF-band RFID Tag chip Using Schottky Diodes in Standard CMOS Technology Nhan Tran, Bomson Lee, and Jong-Wook Lee School of Electronics

I. INTRODUCTION

II. RFID READING RANGE ANALYSIS

III. VOLTAGE MULTIPLIER USING SCHOTTKY DIODES

IV. ASK DEMODULATOR

V. OSCILLATOR WITH DIGITAL CALIBRATION

VI. CONCLUSION

OutlineOutline

Page 6: Development of Long-Range UHF-band RFID Tag chip Using Schottky Diodes in Standard CMOS Technology Nhan Tran, Bomson Lee, and Jong-Wook Lee School of Electronics

RFID Reading Range Analysis

Fig. 1. UHF-band RFID tag consisting of antenna and chip.

Page 7: Development of Long-Range UHF-band RFID Tag chip Using Schottky Diodes in Standard CMOS Technology Nhan Tran, Bomson Lee, and Jong-Wook Lee School of Electronics

RFID Reading Range Analysis

Fig. 2. (a) The equivalent circuit of the RFID tag antenna and tagchip with parallel RC, (b) The equivalent circuit of the RFID tagantenna and tag chip with series RC.

Page 8: Development of Long-Range UHF-band RFID Tag chip Using Schottky Diodes in Standard CMOS Technology Nhan Tran, Bomson Lee, and Jong-Wook Lee School of Electronics

RFID Reading Range Analysis

• we can analyze the factors affecting the detection distance. The first term is the ratio of the antenna open circuit voltage to turn-on voltage of the tag chip, which is determined by Gtag ,RA, EIRP, and, Von,min. The second term indicates that high quality factor is desirable for providing high voltage to the tag chip for increased reading range. The third term is the impedance mismatch factor between the tag antenna and tag chip.

Page 9: Development of Long-Range UHF-band RFID Tag chip Using Schottky Diodes in Standard CMOS Technology Nhan Tran, Bomson Lee, and Jong-Wook Lee School of Electronics

I. INTRODUCTION

II. RFID READING RANGE ANALYSIS

III. VOLTAGE MULTIPLIER USING SCHOTTKY DIODES

IV. ASK DEMODULATOR

V. OSCILLATOR WITH DIGITAL CALIBRATION

VI. CONCLUSION

OutlineOutline

Page 10: Development of Long-Range UHF-band RFID Tag chip Using Schottky Diodes in Standard CMOS Technology Nhan Tran, Bomson Lee, and Jong-Wook Lee School of Electronics

Voltage Multiplier Using Schottky Diodes

Fig. 3. (a) The equivalent circuit of the RFID tag antenna andthe N-stage Dickson voltage multiplier, (b) equivalent circuit modelof Schottky diode, (c) equivalent circuit when anode is grounded.

Page 11: Development of Long-Range UHF-band RFID Tag chip Using Schottky Diodes in Standard CMOS Technology Nhan Tran, Bomson Lee, and Jong-Wook Lee School of Electronics

Voltage Multiplier Using Schottky Diodes

pkV

onpk VV

onV

antenna

UHF

900MHz

RF Power

)V-2(V

)(

onpk

ononpkpk VVVVVDD

Voltage multiplierantenna antenna

onV

onpk VV

pkV

Current

Current

+-

VDD VDD

Page 12: Development of Long-Range UHF-band RFID Tag chip Using Schottky Diodes in Standard CMOS Technology Nhan Tran, Bomson Lee, and Jong-Wook Lee School of Electronics

Voltage Multiplier Using Schottky Diodes

antenna

UHF

900MHz

RF Power

)V-4(V

)(2

onpk

onpk VVNVDD

Tow-stage Voltage multiplier

Page 13: Development of Long-Range UHF-band RFID Tag chip Using Schottky Diodes in Standard CMOS Technology Nhan Tran, Bomson Lee, and Jong-Wook Lee School of Electronics

Voltage Multiplier Using Schottky Diodes

Fig. 4. Measured forward current characteristics of the Schottky diode having (a) different number of parallel connected diodes, (b) different unit finger length with the same overall area, (c) measured junction resistance and junction reactance of the Schottky diodes at 900 MHz as a function of diode size at VD = −0.3 V.

Page 14: Development of Long-Range UHF-band RFID Tag chip Using Schottky Diodes in Standard CMOS Technology Nhan Tran, Bomson Lee, and Jong-Wook Lee School of Electronics

Voltage Multiplier Using Schottky Diodes

Fig. 6. Measured output voltage and conversion efficiency of the 6-stage voltage multiplier as a function of tag chip input voltage, Vin.

Page 15: Development of Long-Range UHF-band RFID Tag chip Using Schottky Diodes in Standard CMOS Technology Nhan Tran, Bomson Lee, and Jong-Wook Lee School of Electronics

I. INTRODUCTION

II. RFID READING RANGE ANALYSIS

III. VOLTAGE MULTIPLIER USING SCHOTTKY DIODES

IV. ASK DEMODULATOR

V. OSCILLATOR WITH DIGITAL CALIBRATION

VI. CONCLUSION

OutlineOutline

Page 16: Development of Long-Range UHF-band RFID Tag chip Using Schottky Diodes in Standard CMOS Technology Nhan Tran, Bomson Lee, and Jong-Wook Lee School of Electronics

ASK Demodulator

Fig. 7. Circuit schematic of the ASK demodulator.

Page 17: Development of Long-Range UHF-band RFID Tag chip Using Schottky Diodes in Standard CMOS Technology Nhan Tran, Bomson Lee, and Jong-Wook Lee School of Electronics

ASK Demodulator

Fig. 9. Measured result of the ASK demodulator. The upper is the RF input signal and the lower is the demodulated output.

Page 18: Development of Long-Range UHF-band RFID Tag chip Using Schottky Diodes in Standard CMOS Technology Nhan Tran, Bomson Lee, and Jong-Wook Lee School of Electronics

I. INTRODUCTION

II. RFID READING RANGE ANALYSIS

III. VOLTAGE MULTIPLIER USING SCHOTTKY DIODES

IV. ASK DEMODULATOR

V. OSCILLATOR WITH DIGITAL CALIBRATION

VI. CONCLUSION

OutlineOutline

Page 19: Development of Long-Range UHF-band RFID Tag chip Using Schottky Diodes in Standard CMOS Technology Nhan Tran, Bomson Lee, and Jong-Wook Lee School of Electronics

Oscillator With Digital Calibration

Fig. 10. The proposed oscillator with digital calibration and waveform description of its operation.

Page 20: Development of Long-Range UHF-band RFID Tag chip Using Schottky Diodes in Standard CMOS Technology Nhan Tran, Bomson Lee, and Jong-Wook Lee School of Electronics

I. INTRODUCTION

II. RFID READING RANGE ANALYSIS

III. VOLTAGE MULTIPLIER USING SCHOTTKY DIODES

IV. ASK DEMODULATOR

V. OSCILLATOR WITH DIGITAL CALIBRATION

VI. CONCLUSION

OutlineOutline

Page 21: Development of Long-Range UHF-band RFID Tag chip Using Schottky Diodes in Standard CMOS Technology Nhan Tran, Bomson Lee, and Jong-Wook Lee School of Electronics

Conclusion

An analysis and fabricated Schottky diode in standard 0.35 μm CMOS process were presented for implementing the voltage multiplier for long-range 900 MHz RFID system.

In addition to the detection range analysis, we presented the design of voltage multiplier, ASK demodulator, and architecture for oscillator with digital calibration.

Page 22: Development of Long-Range UHF-band RFID Tag chip Using Schottky Diodes in Standard CMOS Technology Nhan Tran, Bomson Lee, and Jong-Wook Lee School of Electronics

Thank You for Your Attention