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ACEPACK 2 GADG280120201229SA DC+ OUT NTC NEUT DC- Features ACEPACK 2 power module 13 mΩ of typical R DS(on) each switch (2 dice in parallel per switch) 2.5 kVrms insulation voltage Integrated NTC temperature sensor DC link capacitors between DC BUS and neutral AIN DBC improved thermal performance Press fit contact pins Applications High frequency converters Description This ACEPACK 2 power module represents a leg of a T-type 3-level inverter topology that integrates the advanced silicon carbide power MOSFET technology from STMicroelectronics. This module is manufactured using both the innovative properties of the wide bandgap materials and the high thermal performance substrate, which results in exceptional low on-resistance per unit area and excellent switching performance almost independent of temperature. A negative temperature sensor and three DC link capacitors are also included to optimize switching behavior. Product status link A2U12M12W2-F1C Product summary Order code A2U12M12W2-F1C Marking A2U12M12W2-F1C Package ACEPACK 2 Leads type Press fit Packing Tray ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET A2U12M12W2-F1C Datasheet DS13800 - Rev 1 - September 2021 For further information contact your local STMicroelectronics sales office. www.st.com

Datasheet - A2U12M12W2-F1C - ACEPACK 2 power module, 3

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Page 1: Datasheet - A2U12M12W2-F1C - ACEPACK 2 power module, 3

ACEPACK 2

GADG280120201229SA

DC+

OUT

NTC

NEUT

DC-

Features• ACEPACK 2 power module

– 13 mΩ of typical RDS(on) each switch (2 dice in parallel per switch)– 2.5 kVrms insulation voltage– Integrated NTC temperature sensor– DC link capacitors between DC BUS and neutral– AIN DBC improved thermal performance– Press fit contact pins

Applications• High frequency converters

DescriptionThis ACEPACK 2 power module represents a leg of a T-type 3-level invertertopology that integrates the advanced silicon carbide power MOSFET technologyfrom STMicroelectronics. This module is manufactured using both the innovativeproperties of the wide bandgap materials and the high thermal performancesubstrate, which results in exceptional low on-resistance per unit area and excellentswitching performance almost independent of temperature. A negative temperaturesensor and three DC link capacitors are also included to optimize switching behavior.

Product status link

A2U12M12W2-F1C

Product summary

Order code A2U12M12W2-F1C

Marking A2U12M12W2-F1C

Package ACEPACK 2

Leads type Press fit

Packing Tray

ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET

A2U12M12W2-F1C

Datasheet

DS13800 - Rev 1 - September 2021For further information contact your local STMicroelectronics sales office.

www.st.com

Page 2: Datasheet - A2U12M12W2-F1C - ACEPACK 2 power module, 3

1 Electrical ratings

1.1 Inverter switch(Every switch is made by two SiC MOSFET in parallel and their gates are shorted during every single test, TJ =25 °C unless otherwise specified).

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain source voltage 1200 V

VGS Gate-source voltage -10 to 22 V

VGSop Gate-source voltage (recommended operating values) -5 to 18 V

ID Drain current (continuous) at TC = 25 °C 100 A

IDM (1) Drain current (pulsed) 200 A

PTOT Total power dissipation at TC = 25 °C 326 W

TJ Maximum junction temperature 175 °C

TJop Operating junction temperature range under switching conditions -40 to 150 °C

1. Pulse width is limited by safe operating area.

Table 2. Thermal data

Symbol Parameter Value Unit

RthJC Thermal resistance, junction-to-case, each switch 0.46 °C/W

Table 3. Electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

RDS(on) Static drain-source on-resistance

VGS = 18 V, ID = 90 A 13 17

mΩVGS = 18 V, ID = 90 A,

TC = 150 °C20

VGS(th) Gate threshold voltage VDS = VGS, ID = 1 mA 1.85 3.1 4.9 V

IDSS Zero gate voltage drain current VGS = 0 V, VDS = 1200 V 200 μA

IGSS Gate-body leakage current VDS = 0 V, VGS = -10 to 22 V ±1 µA

Ciss Input capacitance

VDS = 400 V, f = 1 MHz, VGS = 0 V

7000

pFCoss Output capacitance 360

Crss Reverse transfer capacitance 60

RG Intrinsic gate resistance f = 1 MHz, open drain 1 Ω

Qg Total gate chargeVDS = 400 V, ID = 100 A,

VGS = -5 V to 18 V

312

nCQgs Gate-source charge 89

Qgd Gate-drain charge 108.4

A2U12M12W2-F1CElectrical ratings

DS13800 - Rev 1 page 2/14

Page 3: Datasheet - A2U12M12W2-F1C - ACEPACK 2 power module, 3

Table 4. Switching energy

Symbol Parameter Test conditions Min. Typ. Max. Unit

Eon(1) Turn-on switching energy VDS = 800 V, ID = 50 A,

RG = 3.4 Ω, VGS = -5 to 18 V

- 1019 -μJ

Eoff(1) Turn-off switching energy - 378 -

1. Values are referred to the discrete device SCTW70N120G2V.

Table 5. Source-drain antiparallel diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

VSD Forward on voltage drop ISD = 50 A, VGS = 0 V - 2.7 - V

trr(1) Reverse recovery timeISD = 50 A, VDD = 800 V,

VGS = -5 to 18 V

- 11.16 - ns

Qrr(1) Reverse recovery charge - 276 - nC

IRRM(1) Reverse recovery current - 40 - A

1. Values are referred to the discrete device SCTW70N120G2V.

A2U12M12W2-F1CInverter switch

DS13800 - Rev 1 page 3/14

Page 4: Datasheet - A2U12M12W2-F1C - ACEPACK 2 power module, 3

1.2 DC link capacitor (CGA9Q1C0G2J104J280KC)

Table 6. Absolute maximum rating for capacitor

Symbol Parameter Value Unit

VMAX Maximum DC voltage 630 V

TJop Operative temperature range -40 to 125 °C

Table 7. Electrical characteristics – capacitor

Symbol Parameter Value Unit

C1, C2Capacitance value 100 nF

Tolerance ±5 %

1.3 NTC (B57451V5103G362)

Table 8. Absolute maximum ratings for NTC temperature sensor, considered as stand-alone

Symbol Parameter Test condition Min. Typ. Max. Unit

R25 Resistance ratingT = 25 °C

10 kΩ

ΔR25/R Resistance tolerance -2 +2 %

R100 Resistance ratingT = 100 °C

674.8 Ω

ΔR100/R Resistance tolerance -4.75 4.75 %

R25/50

B-value

T=25 °C to 50 °C 3940

KR25/85 T=25 °C to 85 °C 3980

R25/100 T=25 °C to 100 °C (±1%) 4000

T Operating temperature range -40 150 °C

A2U12M12W2-F1CDC link capacitor (CGA9Q1C0G2J104J280KC)

DS13800 - Rev 1 page 4/14

Page 5: Datasheet - A2U12M12W2-F1C - ACEPACK 2 power module, 3

Figure 1. NTC typical resistance vs temperature

1.E+02

1.E+03

1.E+04

0 25 50 75 100 125 150

R (Ω)

T (°C)

GADG280120201311SA

Figure 2. NTC resistance vs temperature, zoom

450

550

650

750

850

950

90 95 100 105 110

R (Ω)

T (°C)

Max.

Min.

Typ.

GADG280120201319SA

A2U12M12W2-F1CNTC (B57451V5103G362)

DS13800 - Rev 1 page 5/14

Page 6: Datasheet - A2U12M12W2-F1C - ACEPACK 2 power module, 3

1.4 Package

Table 9. Absolute maximum ratings for ACEPACK 2 package

Symbol Parameter Min. Typ. Max. Unit

Visol Isolation voltage 2.5 kV

Md Screw mounting torque 40 80 Nm

CTI Comparative tracking index 200

Ls Stray inductance module loop 10 nH

Rs Module lead resistance, terminals to chip 1 mΩ

Tstg Storage temperature range -40 125 °C

A2U12M12W2-F1CPackage

DS13800 - Rev 1 page 6/14

Page 7: Datasheet - A2U12M12W2-F1C - ACEPACK 2 power module, 3

2 Electrical characteristics (curves)

Every switch is made by two SiC MOSFET in parallel and their gates are shorted during every single test.

Figure 3. Typical output characteristics (TJ = -40 °C)

GADG080520201025OCH-40ID (A)

VDS (V)

80

60

40

20

00 0.4 0.8 1.2 1.6

VGS = 20 V

VGS = 16 V

VGS = 18 V

Figure 4. Typical output characteristics (TJ = 25 °C)

GADG080520201026OCH25ID (A)

VDS (V)

80

60

40

20

00 0.4 0.8 1.2 1.6

VGS = 20 V VGS = 16 V

VGS = 18 V

Figure 5. Typical output characteristics (TJ = 150 °C)

GADG080520201027OCH150ID (A)

VDS (V)

80

60

40

20

00 0.4 0.8 1.2 1.6

VGS = 16 V

VGS = 20 V

VGS = 18 V

Figure 6. Typical transfer characteristics

GADG080520201028TCHID (A)

VGS (V)

80

60

40

20

00 2 4 6 8 10 12

TJ = -40 °C

TJ = 150 °C

TJ = 25 °C

Figure 7. Typical diode foward charcteristics (terminal)

GADG080520201028DVF

-20

-40

-60

-80

-100-6 -5 -4 -3 -2 -1

ID (A)

VDS (V)

VGS = -5 V

Figure 8. Maximum transient thermal impedance

GADG080520201033ZTH

10 -1

10 -2

10 -3

10 -6 10 -5 10 -4 10 -3 10 -2 10 -1

ZthJC (°C/W)

tp (s)

Single pulse

A2U12M12W2-F1CElectrical characteristics (curves)

DS13800 - Rev 1 page 7/14

Page 8: Datasheet - A2U12M12W2-F1C - ACEPACK 2 power module, 3

3 Topology and pin description

Figure 9. Electrical topology and pin description

GADG300120201256SA

DC+(4x)

C1

C2

AC_OUT(6x)

GBH_1 GBH_2GNH_1

GNH_2

GNL_1

GNL_2

T1

T2

NEUT(8x)

GBL_1 GBL_2

DC-(4x)

SNL

SNH

SBL

SBH

Figure 10. Package top view with pinout

GADG300120201301SA

A2U12M12W2-F1CTopology and pin description

DS13800 - Rev 1 page 8/14

Page 9: Datasheet - A2U12M12W2-F1C - ACEPACK 2 power module, 3

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.

4.1 ACEPACK 2, 3-level press fit package information

Figure 11. ACEPACK 2, 3-level press fit package outline (dimensions are in mm)

8569722_11_C_Three_PFP

A2U12M12W2-F1CPackage information

DS13800 - Rev 1 page 9/14

Page 10: Datasheet - A2U12M12W2-F1C - ACEPACK 2 power module, 3

Table 10. ACEPACK 2, 3-level press fit mechanical data

Dim.mm

Min. Typ. Max.

A 47.70 48.00 48.30

A1 42.30 42.50 42.70

A2 37.00 REF

B 56.40 56.70 57.00

B1 50.85 51.00 51.15

B2 22.40 22.70 23.00

B3 52.70 REF

C 62.30 62.80 63.30

C1 52.90 53.00 53.10

C2 16.20 16.40 16.60

C3 4.40 4.50 4.60

D 11.90 12.25 12.60

D1 16.45 16.70 17.10

D2 1.35 1.55 1.75

D3 2.55 2.75 2.95

D4 8.50

t 0.30 0.40 0.50

θ 52° 60° 68°

θ1 90°

e 3.20 BSC

d1 2.30 REF

ch 3.50 REF

A2U12M12W2-F1CACEPACK 2, 3-level press fit package information

DS13800 - Rev 1 page 10/14

Page 11: Datasheet - A2U12M12W2-F1C - ACEPACK 2 power module, 3

Figure 12. ACEPACK 2, 3-level press fit recommended PCB holes layout (dimensions are in mm)

8569722_11_C_ACEPACK2_three_pr_recomm_PCB_hol_lay

A2U12M12W2-F1CACEPACK 2, 3-level press fit package information

DS13800 - Rev 1 page 11/14

Page 12: Datasheet - A2U12M12W2-F1C - ACEPACK 2 power module, 3

Revision history

Table 11. Document revision history

Date Revision Changes

06-Sep-2021 1 First release.

A2U12M12W2-F1C

DS13800 - Rev 1 page 12/14

Page 13: Datasheet - A2U12M12W2-F1C - ACEPACK 2 power module, 3

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

1.1 Inverter switch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1.2 DC link capacitor (CGA9Q1C0G2J104J280KC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

1.3 NTC (B57451V5103G362). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

1.4 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

2 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7

3 Topology and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9

4.1 ACEPACK 2, 3-level press fit package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

A2U12M12W2-F1CContents

DS13800 - Rev 1 page 13/14

Page 14: Datasheet - A2U12M12W2-F1C - ACEPACK 2 power module, 3

IMPORTANT NOTICE – PLEASE READ CAREFULLY

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to STproducts and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. STproducts are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design ofPurchasers’ products.

No license, express or implied, to any intellectual property right is granted by ST herein.

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or servicenames are the property of their respective owners.

Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

© 2021 STMicroelectronics – All rights reserved

A2U12M12W2-F1C

DS13800 - Rev 1 page 14/14