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Chapter Chapter Chapter Chapter 4 4 4 DC Biasing DC Biasing DC Biasing DC Biasing– –BJTs BJTs BJTs BJTs

Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTswebstaff.kmutt.ac.th/~suwat.pat/material/ene212 ch4.pdf · Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTs

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Page 1: Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTswebstaff.kmutt.ac.th/~suwat.pat/material/ene212 ch4.pdf · Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTs

Chapter Chapter Chapter Chapter 4444DC BiasingDC BiasingDC BiasingDC Biasing––––BJTsBJTsBJTsBJTs

Page 2: Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTswebstaff.kmutt.ac.th/~suwat.pat/material/ene212 ch4.pdf · Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTs

BiasingBiasing

Biasing:Biasing: TThe DC voltages applied to a transistor in order to turn it on so that it can amplify the AC signal.

Copyright ©2009 by Pearson Education, Inc.Upper Saddle River, New Jersey 07458 • All rights reserved.

Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky

Page 3: Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTswebstaff.kmutt.ac.th/~suwat.pat/material/ene212 ch4.pdf · Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTs

Operating PointOperating Point

The DC input establishes an operating or quiescent point

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Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky

called the QQ--pointpoint.

Page 4: Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTswebstaff.kmutt.ac.th/~suwat.pat/material/ene212 ch4.pdf · Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTs

The Three States of OperationThe Three States of Operation

• Active or Linear Region OperationActive or Linear Region OperationBase–Emitter junction is forward biasedBase–Collector junction is reverse biased

• Cutoff Region OperationCutoff Region OperationBase–Emitter junction is reverse biased

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Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky

Base–Emitter junction is reverse biased

•• Saturation Region OperationSaturation Region OperationBase–Emitter junction is forward biasedBase–Collector junction is forward biased

Page 5: Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTswebstaff.kmutt.ac.th/~suwat.pat/material/ene212 ch4.pdf · Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTs

DC Biasing CircuitsDC Biasing Circuits

• Fixed-bias circuit• Emitter-stabilized bias circuit• Collector-emitter loop• Voltage divider bias circuit• DC bias with voltage feedback

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Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky

• DC bias with voltage feedback

Page 6: Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTswebstaff.kmutt.ac.th/~suwat.pat/material/ene212 ch4.pdf · Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTs

Fixed BiasFixed Bias

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The BaseThe Base--Emitter LoopEmitter Loop

From Kirchhoff’s voltage law:

Solving for base current:

+VCC – IBRB – VBE = 0

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Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky

Solving for base current:

B

BECCB R

VVI

−−−−====

Page 8: Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTswebstaff.kmutt.ac.th/~suwat.pat/material/ene212 ch4.pdf · Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTs

CollectorCollector--Emitter LoopEmitter Loop

Collector current:

From Kirchhoff’s voltage law:

BIIC

ββββ====

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Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky

From Kirchhoff’s voltage law:

CCCCCE RIVV −−−−====

Page 9: Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTswebstaff.kmutt.ac.th/~suwat.pat/material/ene212 ch4.pdf · Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTs

SaturationSaturation

When the transistor is operating in saturation, current through the transistor is at its maximum possible value.

CRCCV

CsatI ====

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Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky

CRCsat

V 0CEV ≅≅≅≅

Page 10: Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTswebstaff.kmutt.ac.th/~suwat.pat/material/ene212 ch4.pdf · Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTs

Load Line AnalysisLoad Line Analysis

II CsatCsat

ICC = VCCCC / RCC

VCECE = 0 V

VVCEcutoffCEcutoff

VCECE = VCCCC

I = 0 mA

The end points of the load line are:

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Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky

ICC = 0 mA

• where the value of RBB sets the value of IBB

• that sets the values of VCECE and ICC

The Q-point is the operating point:

Page 11: Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTswebstaff.kmutt.ac.th/~suwat.pat/material/ene212 ch4.pdf · Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTs

Circuit Values Affect the QCircuit Values Affect the Q--PointPoint

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Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky

more more ……

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Circuit Values Affect the QCircuit Values Affect the Q--PointPoint

Copyright ©2009 by Pearson Education, Inc.Upper Saddle River, New Jersey 07458 • All rights reserved.

Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky

more more ……

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Circuit Values Affect the QCircuit Values Affect the Q--PointPoint

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Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky

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EmitterEmitter--Stabilized Bias CircuitStabilized Bias Circuit

Adding a resistor (RE) to the emitter circuit stabilizes

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Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky

circuit stabilizes the bias circuit.

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BaseBase--Emitter LoopEmitter Loop

From Kirchhoff’s voltage law:

0R1)I(-RI-V EBBBCC ====++++ββββ

0 RI-V-RI-V EEBEEECC ====++++

Since IE = (ββββ + 1)IB:

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Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky

0R1)I(-RI-V EBBBCC ====++++ββββ

EB

BECCB 1)R(R

V-VI

++++ββββ++++====

Solving for IB:

Page 16: Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTswebstaff.kmutt.ac.th/~suwat.pat/material/ene212 ch4.pdf · Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTs

CollectorCollector--Emitter LoopEmitter Loop

From Kirchhoff’s voltage law:

0 CCVCRCI CEV EREI =−++

Since IE ≅≅≅≅ IC:

)R (RI– V V ECCCCCE ++++====

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Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky

)R (RI– V V ECCCCCE ++++====

Also:

EBEBRCCB

CCCCECEC

EEE

V V RI– V V

RI - V V V V

RI V

++++========

====++++====

====

Page 17: Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTswebstaff.kmutt.ac.th/~suwat.pat/material/ene212 ch4.pdf · Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTs

Improved Biased StabilityImproved Biased Stability

Stability refers to a circuit condition in which the currents and voltages will remain fairly constant over a wide range of temperatures and transistor Beta (ββββ) values.

Adding RE to the emitter improves the stability of a transistor.

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Saturation LevelSaturation Level

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Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky

VCEcutoff:: I Csat:

The endpoints can be determined from the load line.

mA 0 I

V V

C

CCCE

====

====

ERCR

CCVCI

CE V 0V

++++====

====

Page 19: Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTswebstaff.kmutt.ac.th/~suwat.pat/material/ene212 ch4.pdf · Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTs

Voltage Divider BiasVoltage Divider Bias

This is a very stable bias circuit.

The currents and

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Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky

The currents and voltages are nearly independent of any any variations in ββββ.

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Approximate AnalysisApproximate AnalysisWhere IB << I1 and I1 ≅≅≅≅ I 2 :

Where ββββRE > 10R2:

21

CC2B RR

VRV

++++====

EE R

VI ====

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Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky

From Kirchhoff’s voltage law:

EE R

I ====

BEBE VVV −−−−====

EECCCCCE RI RI V V −−=

)R (RIV V

II

ECCCCCE

CE

+−=

Page 21: Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTswebstaff.kmutt.ac.th/~suwat.pat/material/ene212 ch4.pdf · Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTs

Voltage Divider Bias AnalysisVoltage Divider Bias Analysis

Transistor Saturation LevelTransistor Saturation Level

EC

CCCmaxCsat RR

VII

++++========

Load Line AnalysisLoad Line Analysis

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Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky

Load Line AnalysisLoad Line Analysis

Cutoff:Cutoff: Saturation:Saturation:

mA0I

VV

C

CCCE

====

====

V0VCE

ERCRCCV

CI

====

++++====

Page 22: Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTswebstaff.kmutt.ac.th/~suwat.pat/material/ene212 ch4.pdf · Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTs

DC Bias with Voltage FeedbackDC Bias with Voltage Feedback

Another way to improve the stability of a bias circuit is to add a feedback path from collector to

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from collector to base.

In this bias circuit the Q-point is only slightly dependent on the transistor beta, ββββ.

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BaseBase--Emitter LoopEmitter LoopFrom Kirchhoff’s voltage law:From Kirchhoff’s voltage law:

0RI–V–RI–RI– V EEBEBBCCCC ====′′′′

Where IWhere IBB << I<< ICC::

CIBICICI' ≅+=

Knowing IKnowing I = = ββββββββII and Iand I ≅≅≅≅≅≅≅≅ II , the loop , the loop

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Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky

)R(RR

VVI

ECB

BECCB

++++ββββ++++

−−−−====

Knowing IKnowing I CC = = ββββββββII BB and Iand IEE ≅≅≅≅≅≅≅≅ II CC, the loop , the loop equation becomes: equation becomes:

0RIVRIRI– V EBBEBBCBCC ====ββββ−−−−−−−−−−−−ββββ

Solving for ISolving for IBB::

Page 24: Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTswebstaff.kmutt.ac.th/~suwat.pat/material/ene212 ch4.pdf · Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTs

CollectorCollector--Emitter LoopEmitter Loop

Applying Kirchoff’s voltage law:Applying Kirchoff’s voltage law:

IE + VCE + I’CRC – VCC = 0

Since ISince I′′′′′′′′CC ≅≅≅≅≅≅≅≅ II CC and Iand ICC = = ββββββββII BB::

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Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky

IC(RC + RE) + VCE – VCC =0

Solving for VSolving for VCECE::

VCE = VCC – IC(RC + RE)

Page 25: Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTswebstaff.kmutt.ac.th/~suwat.pat/material/ene212 ch4.pdf · Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTs

BaseBase--Emitter Bias AnalysisEmitter Bias Analysis

Transistor Saturation LevelTransistor Saturation Level

EC

CCCmaxCsat RR

VII

++++========

Load Line AnalysisLoad Line Analysis

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Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky

Cutoff:Cutoff: Saturation:Saturation:

mA 0I

VV

C

CCCE

=

=

V 0VCE

ER

CR

CCV

CI

=

+=

Page 26: Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTswebstaff.kmutt.ac.th/~suwat.pat/material/ene212 ch4.pdf · Chapter Chapter 4444 DC BiasingDC Biasing– –––BJTsBJTs

Transistor Switching NetworksTransistor Switching Networks

Transistors with only the DC source applied can be used Transistors with only the DC source applied can be used as electronic switches.as electronic switches.

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Switching Circuit CalculationsSwitching Circuit Calculations

C

CCCsat R

VI ====

dc

CsatB

II

ββββ>>>>

Saturation current:Saturation current:

To ensure saturation:To ensure saturation:

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Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky

dcββββ

Csat

CEsatsat I

VR ====

CEO

CCcutoff I

VR ====

EmitterEmitter--collector resistance collector resistance at saturation and cutoff:at saturation and cutoff:

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Switching TimeSwitching Time

Transistor switching times:Transistor switching times:

dron ttt ++++====

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fsoff ttt ++++====

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Troubleshooting HintsTroubleshooting Hints

• Approximate voltages– VBE ≅≅≅≅ .7 V for silicon transistors– VCE ≅≅≅≅ 25% to 75% of VCC

• Test for opens and shorts with an ohmmeter. • Test the solder joints.• Test the transistor with a transistor tester or a curve tracer.

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• Test the transistor with a transistor tester or a curve tracer.

• Note that the load or the next stage affects the transistor operation.

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PNP TransistorsPNP Transistors

The analysis for pnp transistor biasing circuits is the same as that for npn transistor circuits. The only difference is that the currents are flowing in the opposite direction.

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