BC869 Data Sheets

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    DATA SHEET

    Product specificationSupersedes data of 1998 Jul 16

    1999 Apr 08

    DISCRETE SEMICONDUCTORS

    BC869PNP medium power transistor

    ook, halfpage

    M3D109

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    1999 Apr 08 3

    Philips Semiconductors Product specification

    PNP medium power transistor BC869

    THERMAL CHARACTERISTICS

    Note

    1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.For other mounting conditions, see Thermal considerations for SOT89 in the General Part of associated Handbook.

    CHARACTERISTICS

    Tj = 25 C unless otherwise specified.

    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    Rth j-a thermal resistance from junction to ambient note 1 93 K/W

    Rth j-s thermal resistance from junction to soldering point 13 K/W

    SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

    ICBO collector cut-off current IE = 0; VCB = 25 V 100 nA

    IE = 0; VCB = 25 V; Tj = 150 C 10 A

    IEBO emitter cut-off current IC = 0; VEB = 5 V 100 nA

    hFE DC current gain IC = 5 mA; VCE = 10 V; see Fig.2 50

    IC = 500 mA; VCE = 1 V; see Fig.2 100 375

    IC = 1 A; VCE = 1 V; see Fig.2 60

    DC current gain IC = 500 mA; VCE = 1 V; see Fig.2

    BC869-16 100 250

    BC869-25 160 375

    VCEsat collector-emitter saturationvoltage

    IC = 1 A; IB = 100 mA 500 mV

    VBE base-emitter voltage IC = 5 mA; VCE = 10 V 620 mV

    IC = 1 A; VCE = 1 V 1 V

    fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 40 MHz

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    Philips Semiconductors Product specification

    PNP medium power transistor BC869

    Fig.2 DC current gain; typical values.

    VCE = 1 V.

    handbook, full pagewidth

    0

    200

    400

    hFE

    100

    300

    MGD845

    101 1IC (mA)

    10 102 104103

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    Philips Semiconductors Product specification

    PNP medium power transistor BC869

    PACKAGE OUTLINE

    REFERENCESOUTLINEVERSION

    EUROPEANPROJECTION

    ISSUE DATEIEC JEDEC EIAJ

    DIMENSIONS (mm are the original dimensions)

    SOT89 97-02-28

    w M

    e1

    e

    EHE

    B

    0 2 4 mm

    scale

    b3

    b2

    b1

    c

    D

    L

    A

    Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89

    1 2 3

    UNIT A

    mm1.61.4

    0.480.35

    c

    0.440.37

    D

    4.64.4

    E

    2.62.4

    HE

    4.253.75

    e

    3.0

    w

    0.13

    e1

    1.5

    Lmin.

    0.8

    b2b1

    0.530.40

    b3

    1.81.4

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    1999 Apr 08 6

    Philips Semiconductors Product specification

    PNP medium power transistor BC869

    DEFINITIONS

    LIFE SUPPORT APPLICATIONS

    These products are not designed for use in life support appliances, devices, or systems where malfunction of theseproducts can reasonably be expected to result in personal injury. Philips customers using or selling these products foruse in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from suchimproper use or sale.

    Data Sheet Status

    Objective specification This data sheet contains target or goal specifications for product development.

    Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

    Product specification This data sheet contains final product specifications.

    Limiting values

    Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one ormore of the limiting values may cause permanent damage to the device. These are stress ratings only and operationof the device at these or at any other conditions above those given in the Characteristics sections of the specificationis not implied. Exposure to limiting values for extended periods may affect device reliability.

    Application informationWhere application information is given, it is advisory and does not form part of the specification.

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