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7/27/2019 BC869 Data Sheets
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DATA SHEET
Product specificationSupersedes data of 1998 Jul 16
1999 Apr 08
DISCRETE SEMICONDUCTORS
BC869PNP medium power transistor
ook, halfpage
M3D109
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1999 Apr 08 3
Philips Semiconductors Product specification
PNP medium power transistor BC869
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.For other mounting conditions, see Thermal considerations for SOT89 in the General Part of associated Handbook.
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 93 K/W
Rth j-s thermal resistance from junction to soldering point 13 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 25 V 100 nA
IE = 0; VCB = 25 V; Tj = 150 C 10 A
IEBO emitter cut-off current IC = 0; VEB = 5 V 100 nA
hFE DC current gain IC = 5 mA; VCE = 10 V; see Fig.2 50
IC = 500 mA; VCE = 1 V; see Fig.2 100 375
IC = 1 A; VCE = 1 V; see Fig.2 60
DC current gain IC = 500 mA; VCE = 1 V; see Fig.2
BC869-16 100 250
BC869-25 160 375
VCEsat collector-emitter saturationvoltage
IC = 1 A; IB = 100 mA 500 mV
VBE base-emitter voltage IC = 5 mA; VCE = 10 V 620 mV
IC = 1 A; VCE = 1 V 1 V
fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 40 MHz
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Philips Semiconductors Product specification
PNP medium power transistor BC869
Fig.2 DC current gain; typical values.
VCE = 1 V.
handbook, full pagewidth
0
200
400
hFE
100
300
MGD845
101 1IC (mA)
10 102 104103
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Philips Semiconductors Product specification
PNP medium power transistor BC869
PACKAGE OUTLINE
REFERENCESOUTLINEVERSION
EUROPEANPROJECTION
ISSUE DATEIEC JEDEC EIAJ
DIMENSIONS (mm are the original dimensions)
SOT89 97-02-28
w M
e1
e
EHE
B
0 2 4 mm
scale
b3
b2
b1
c
D
L
A
Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89
1 2 3
UNIT A
mm1.61.4
0.480.35
c
0.440.37
D
4.64.4
E
2.62.4
HE
4.253.75
e
3.0
w
0.13
e1
1.5
Lmin.
0.8
b2b1
0.530.40
b3
1.81.4
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1999 Apr 08 6
Philips Semiconductors Product specification
PNP medium power transistor BC869
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of theseproducts can reasonably be expected to result in personal injury. Philips customers using or selling these products foruse in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from suchimproper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one ormore of the limiting values may cause permanent damage to the device. These are stress ratings only and operationof the device at these or at any other conditions above those given in the Characteristics sections of the specificationis not implied. Exposure to limiting values for extended periods may affect device reliability.
Application informationWhere application information is given, it is advisory and does not form part of the specification.
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