Electronic Data Sheets

University of Pangasinan-PHINMADepartment of Electronics and Communications Engineering

Pangasinan, Philippines

Industrial Electronics Data Sheets

in partial fulfilment for therequirements in

Industrial Electronics

Submitted to: Engr. Cesar VelascoSubmitted by: Lyndon G. Padama

Date Submitted: January 11, 2011

SILICON CONTROLLED RECTIFIER (SCR)

A. Product Description

1. Part No./Model:2N5060 Series

2. Packaging Type:It is supplied in an inexpensive plastic TO−92/TO-226AA package which is readily

adaptable for use in automatic insertion equipment.

3. Specifications/ RatingSilicon Controlled Rectifiers (0.8 A RMS, 30 − 200 V)Sensitive Gate Trigger Current − 200 A MaximumLow Reverse and Forward Blocking Current − 50 A Maximum, TC = 110°CLow Holding Current − 5 mA Maximum

4. Country of Origin / Brand Name: United States of America / ON Semiconductor - Sensitive Gate Silicon Controlled

Rectifiers: Reverse Blocking Thyristors

B. Drawing / Picture

C. Discussion

Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. It is supplied in an inexpensive plastic TO−92/TO-226AA package which is readily adaptable for use in automatic insertion equipment.

D. Referencehttp://onsemi.com

SILICON CONTROLLED RECTIFIER (SCR)


1. Part No./Model:MCR100 Series

2. Packaging Type:Supplied in an inexpensive plastic TO-226AA package which is readily adaptable for

use in automatic insertion equipment

3. Specifications/ RatingBlocking Voltage to 600 VOn−State Current Rating of 0.8 A RMS at 80°CHigh Surge Current Capability − 10 AMinimum and Maximum Values of IGT, VGT and IH Specified for Ease of DesignImmunity to dV/dt − 20 V/sec Minimum at 110°C

4. Country of Origin / Brand Name:United States of America / ON Semiconductor - Sensitive Gate Silicon Controlled

Rectifiers: Reverse Blocking Thyristors


C. DiscussionAnnular PNPN devices designed for high volume consumer applications such as relay

and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. It is supplied in an inexpensive plastic TO−92/TO-226AA package which is readily adaptable for use in automatic insertion equipment.



1. Part No./Model:UPGA350A

2. Packaging Type:Molded Epoxy

3. Specifications/ Rating

4. Country of Origin / Brand Name: United States of America / Microsemiconductor - Nanosecond SCR Switch


C. Discussion

Designed for high current narrow-pulse switching applications where size and current handling capability are critical. These devices may be triggered on using low power logic drivers from (+0.8 V at 200 μA).

Nanosecond SCR switch for reliable high current pulse generators, modulators and photo-flash quenching. Several new applications for nanosecond SCR switches include automotive collision avoidance systems, laser drivers, photo-flash quenching circuits, specially developed circuits for the emerging digital imaging range finders and communication markets.

D. Referencehttp://www.microsemi.com

UNIJUNCTION TRANSISTOR (UJT)

1. Part No./Model:NTE6410

2. Packaging Type:TO92 type package


4. Country of Origin / Brand Name: United States of America / Philips Semiconductor - Unijunction Transistor (UJT)


C. DiscussionThe NTE6410 is a PN unijunction transistor in a TO92 type package designed for use

in pulse and timing circuits, sensing circuits and thyristor trigger circuits.

D. Referencehttp://www.semiconductors.philips.com

PROGRAMMABLE UNIJUNCTION TRANSISTOR (UJT)

1. Part No./Model:2N6027/28

2. Packaging Type:Supplied in an inexpensive TO–92 plastic package for high–volume requirements,

this package is readily adaptable for use in automatic insertion equipment.

3. Specifications/ RatingProgrammable — RBB, h, IV and IPLow On–State Voltage — 1.5 Volts Maximum @ IF = 50 mALow Gate to Anode Leakage Current — 10 nA MaximumHigh Peak Output Voltage — 11 Volts TypicalLow Offset Voltage — 0.35 Volt Typical (RG = 10 k ohms)

4. Country of Origin / Brand Name:United States of America / ON Semiconductor - Programmable Unijunction

Transistor Triggers


C. DiscussionDesigned to enable the engineer to “program’’ unijunction characteristics such as

RBB, h, IV, and IP by merely selecting two resistor values. Application includes thyristor–trigger, oscillator, pulse and timing circuits. These devices may also be used in special thyristor applications due to the availability of an anode gate.



1. Part No./Model:BRY39

2. Packaging Type:TO-72 metal package


4. Country of Origin / Brand Name:United States of America / Philips - Programmable Unijunction Transistor / Silicon

controlled switch


C. DiscussionSilicon planar PNPN switch or trigger device. It is an integrated PNP/NPN transistor

pair with all electrodes accessible. For application of the BRY39 as a programmable unijunction transistor, only the anode gate is used. To simplify the symbols, the term gate instead of anode gate will be used.

D. Referencehttp://www.semiconductors.philips.com


1. Part No./Model:CMPP6027, CMPP6028

2. Packaging Type:Manufactured in a surface mount SOT- 23 package


4. Country of Origin / Brand Name: United States of America / Central Semiconductor - Surface Mount Programmable

Unijunction Silicon Transistor


C. DiscussionThe Central Semiconductor CMPP6027, CMPP6028 types are Silicon Programmable

Unijunction Transistors designed for adjustable (programmable) characteristics such as, Valley Current (IV), Peak Current (IP), and Intrinsic Standoff Ratio (η).

D. ReferenceCentral Semiconductor Corporation

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