AZ® Electronic Materials Electronic Materials TX1311 Series · AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB,

AZAZ®® Electronic MaterialsElectronic Materials

TX131TX1311 Series1 SeriesThick 248nm Thick 248nm PhotoresistPhotoresist for for

High Energy Implant ApplicationsHigh Energy Implant Applications

AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.

AZ Confidential

AZ® TX1311 Series Spin Speed Curve

200mm 200mm SiSi WaferWafer、、 SoftbakeSoftbake: 140: 140ººC/C/990 sec0 sec

20000

30000

40000

50000

60000

70000

1000 1500 2000 2500 3000 3500 4000

Spin Speed (rpm)

Film

Thi

ckne

ss (A

)

145cP70cP55cP


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200mm Si Wafer200mm Si Wafer

FT: 3.8FT: 3.8umum

SB: 140SB: 140ººCC/150sec/150sec

St Dev: 0.21%St Dev: 0.21%

AZ® TX1311 55cP Coating Uniformity


AZ Confidential

<Process Condition>~RESIST PROCESS~Substrate : 200mm Bare Si (with HMDS), Pre bake :140ºC/ 90sec (Hot Plate), Film Thickness 4.0umExposure : FPA-3000EX5(NA=0.55,sigma=0.55), PEB : 110ºC/ 90sec (Hot Plate)Development : AZ 300MIF(2.38% TMAH), 23℃ / 90sec(Single Puddle)Measurement Pattern size : 0.4um Trench (1:5)

25mJ 26mJ 27mJ 28mJ 29mJ 30mJ 31mJ 32mJ 33mJ 34mJ 35mJ 36mJ-1.6 366.3 368.8 381.5 394.6 396.2 404 410.4 413.6 420 426.5-1.4 348.5 356.2 367.6 376.4 384.7 387.6 395.6 406.4 413.5 418.5 429.2 428.3-1.2 349.8 360.4 375.2 392.2 400.1 411.3 417.5 422.7 429.1 441.9 442.3 447.6

-1 357.9 374 392.3 396.6 404.6 409.4 420.9 428.3 436.9 441.3 447.4 455.7-0.8 353.5 367.4 386.5 399.1 413.9 421.4 430 434.8 442.6 447.2 466.2 470.2-0.6 423.4 436.2 443.1 450.5 456.2 460.7 465.6 470.4-0.4 465.1 470.5 472.5

AZ TX1311 Depth of FocusSB : 140C/90sec, PEB : 110C/90sec

300

325

350

375

400

425

450

475

500

-1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4

Focus Offset (um)

CD

(nm

)

25mJ

26mJ

27mJ

28mJ

29mJ

30mJ

31mJ

32mJ

33mJ

34mJ

35mJ

36mJ

AZ® TX1311 55cP Depth of Focus (25-36 mJ/cm2)


AZ Confidential

-1.6um -1.4um -1.2um -1.0um -0.8um -0.6um

28.0

mJ

29.0

mJ/

cm2

381.5nm 384.7nm 400.1nm 404.6nm 413.9nm 423.4nm

/cm

2

368.8nm 376.4nm 392.2nm 399.1nm396.6nm

Focus Offset



AZ Confidential

-1.6

um-1

.4um

-1.2

um-1

.0um

-0.8

um-0

.6um

-0.4

um

<Process Condition>~RESIST PROCESS~Substrate : 200mm Bare Si (with HMDS), Pre bake :140ºC/ 90sec (Hot Plate), Film Thickness 4.0umExposure : FPA-3000EX5(NA=0.55,sigma=0.55), PEB : 110ºC/ 90sec (Hot Plate)Development : AZ 300MIF(2.38% TMAH), 23℃ / 90sec (Single Puddle)Measurement Pattern size : 0.4um Trench (1:5)

27.0ｍJ/cm2 28.0ｍJ/cm2 29.0ｍJ/cm2 30.0ｍJ/cm2 31.0ｍJ/cm2 32.0ｍJ/cm2 33.0ｍJ/cm2 34.0ｍJ/cm2 35.0ｍJ/cm2 36.0ｍJ/cm2

Exposure Dose

AZ® TX1311 55cP Depth of Focus (Top View)

25.0ｍJ/cm2 26.0ｍJ/cm2

Focu

s O

ffset


AZ Confidential

-1.6

um-1

.4um

-1.2

um-1

.0um

-0.8

um

25.0ｍJ/cm2 26.0ｍJ/cm2 27.0ｍJ/cm2 28.0ｍJ/cm2 29.0ｍJ/cm2 30.0ｍJ/cm2 31.0ｍJ/cm2 32.0ｍJ/cm2 33.0ｍJ/cm2 34.0ｍJ/cm2 35.0ｍJ/cm2 36.0ｍJ/cm2

<Process Condition>~RESIST PROCESS~Substrate : 200mm Bare Si (with HMDS), Pre bake :140ºC/ 90sec (Hot Plate),

-0.6

um-0

.4um

Film Thickness 4.0umExposure : FPA-3000EX5(NA=0.55,sigma=0.55), PEB : 110ºC/ 90sec (Hot Plate)Development : AZ 300MIF(2.38% TMAH), 23℃ / 90sec (Single Puddle)Measurement Pattern size : 0.4um Trench (1:5)

Exposure Dose

Focu

s O

ffset

AZ® TX1311 55cP Depth of Focus (Cross Section)


AZ Confidential

<Process Condition>~RESIST PROCESS~Substrate : 200mm Bare Si (with HMDS), Pre bake :140ºC/ 60sec (Hot Plate), Film Thickness 4.0umExposure : FPA-3000EX5(NA=0.55,sigma=0.55), PEB : 110ºC/ 60sec (Hot Plate)Development : AZ 300MIF(2.38% TMAH), 23℃ / 90sec (Single Puddle)Measurement Pattern size : 0.4um Trench (1:5)

28mJ 29mJ 30mJ 31mJ 32mJ 33mJ 34mJ 35mJ 36mJ 37mJ 38mJ 39mJ 40mJ 41mJ-1.6 384.9 397.7 399.9 405.3 407.3 413.1 419.6 422.8 426.1 426.8 429.4-1.4 343.8 367.7 369.7 387.7 392.5 406.5 406.3 412.4 417 421.6 430 428 433.5 434.3-1.2 356.8 364.3 378.2 388.6 404.4 410.9 416.3 423.6 426.4 438.4 442.4 450.2 458.2 457.8

-1 356.7 384 389.5 398 408.7 416.6 431.1 443.4 446.4 450.4 461.9-0.8 350.7 371.5 386.9 400.2 415.3 432 437.6 444.6 455.4-0.6 453.1 463.3-0.4

AZ TX1311 Depth of FocusSB : 140C/60sec, PEB : 110C/60sec

300

325

350

375

400

425

450

475

500

-1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4

Focus Offset (um)

CD

(nm

)28mJ29mJ30mJ31mJ32mJ33mJ34mJ35mJ36mJ37mJ38mJ39mJ40mJ41mJ42mJ



AZ Confidential

-1.6um -1.4um -1.2um -1.0um -0.8um -0.6um

31.0

mJ

32.0

mJ/

cm2

397.7nm 392.5nm 404.4nm 408.7nm 415.3nm

Focus Offset

/cm

2

384.9nm 387.7nm 388.6nm 398.0nm 400.2nm



AZ Confidential

-1.6

um-1

.4um

-1.2

um-1

.0um

-0.8

um

28.0ｍJ/cm2

29.0ｍJ/cm2

30.0ｍJ/cm2

31.0ｍJ/cm2

32.0ｍJ/cm2

33.0ｍJ/cm2

34.0ｍJ/cm2

35.0ｍJ/cm2

36.0ｍJ/cm2

37.0ｍJ/cm2

38.0ｍJ/cm2

39.0ｍJ/cm2

40.0ｍJ/cm2

41.0ｍJ/cm2


-0.6

um

Film Thickness 4.0umExposure : FPA-3000EX5(NA=0.55,sigma=0.55), PEB : 110ºC/ 60sec (Hot Plate)Development : AZ 300MIF(2.38% TMAH), 23℃ / 90sec (Single Puddle)Measurement Pattern size : 0.4um Trench (1:5) Exposure Dose

Focu

s O

ffset

AZ® TX1311 55cP Depth of Focus (Top View)


AZ Confidential

-1.6

um-1

.4um

-1.2

um-1

.0um

-0.8

um

28.0ｍJ/cm2 29.0ｍJ/cm2 30.0ｍJ/cm2 31.0ｍJ/cm2 32.0ｍJ/cm2 33.0ｍJ/cm2 34.0ｍJ/cm2 35.0ｍJ/cm2 36.0ｍJ/cm2 37.0ｍJ/cm2 38.0ｍJ/cm2 39.0ｍJ/cm2


-0.6

um

Film Thickness 4.0umExposure : FPA-3000EX5(NA=0.55,sigma=0.55), PEB : 110ºC/ 60sec (Hot Plate)Development : AZ 300MIF(2.38% TMAH), 23℃ / 90sec (Single Puddle)Measurement Pattern size : 0.4um Trench (1:5)

Exposure Dose

Focu

s O

ffset

AZ® TX1311 55cP Depth of Focus (Cross Section)


AZ Confidential

18.0mJ18.0mJ 19.0mJ19.0mJ 25.0mJ25.0mJ24.0mJ24.0mJ23.0mJ23.0mJ22.0mJ22.0mJ21.0mJ21.0mJ20.0mJ20.0mJ17.0mJ17.0mJ

Process ConditionsProcess Conditions

Coating:Coating: 200mm Silicon; FT = 3.8200mm Silicon; FT = 3.8umum; ; SoftbakeSoftbake：： 140140ººCC//990sec0secExposureExposure：： FPAFPA--3000EX5 (NA=0.55,sigma=0.55)3000EX5 (NA=0.55,sigma=0.55)PEBPEB：： 110110ººC/90sec; Develop:C/90sec; Develop: AZ 300MIF (2.38%), 23AZ 300MIF (2.38%), 23ººCC/60sec single puddle/60sec single puddle

FF --0.

2um

0.2u

mFF --

0.4u

m0.

4um

FF --0.

6um

0.6u

mAZ® TX1311 55cP

Lithography Performance, 0.50µm Trench (1:5)


AZ Confidential


FF --0.

2um

0.2u

mFF --

0.4u

m0.

4um

FF --0.

6um

0.6u

mAZ® TX1311 55cP

Lithography Performance, 0.45µm Trench (1:5)Process ConditionsProcess Conditions



AZ Confidential


FF --0.

2um

0.2u

mFF --

0.4u

m0.

4um

FF --0.

6um

0.6u

mAZ® TX1311 55cP

Lithography Performance, 0.40µm Trench (1:5)Process ConditionsProcess Conditions



AZ Confidential

17.0mJ17.0mJ 18.0mJ18.0mJ 24.0mJ24.0mJ23.0mJ23.0mJ22.0mJ22.0mJ21.0mJ21.0mJ20.0mJ20.0mJ19.0mJ19.0mJ 25.0mJ25.0mJ

FF --0.

4um

0.4u

mFF --

0.6u

m0.

6um

FF --0.

2um

0.2u

mAZ® TX1311 55cP

Lithography Performance, 0.50µm Isolated LineProcess ConditionsProcess Conditions



AZ Confidential

FF --0.

4um

0.4u

mFF --

0.6u

m0.

6um

FF --0.

2um

0.2u

m


AZ® TX1311 55cP Lithography Performance, 0.45µm Isolated Line




AZ Confidential

FF --0.

4um

0.4u

mFF --

0.6u

m0.

6um

FF --0.

2um

0.2u

m


AZ® TX1311 55cP Lithography Performance, 0.40µm Isolated Line




AZ Confidential


FF --0.

4um

0.4u

mFF --

0.6u

m0.

6um

FF --0.

8um

0.8u

mFF --

0.2u

m0.

2um

AZ® TX1311 55cP Lithography Performance, 1.0µm Dense Dots (1:0.5)


Coating:Coating: 200mm Silicon; FT = 200mm Silicon; FT = 3.83.8umum; ; SoftbakeSoftbake：： 140140ººCC//990sec0secExposureExposure：： FPAFPA--3000EX5 (NA=0.55,sigma=0.55)3000EX5 (NA=0.55,sigma=0.55)PEBPEB：： 110110ººC/90secC/90sec; Develop:; Develop: AZ 300MIF (2.38%), 23AZ 300MIF (2.38%), 23ººCC/60sec single puddle/60sec single puddle


AZ Confidential


FF --0.

4um

0.4u

mFF --

0.6u

m0.

6um

FF --0.

8um

0.8u

mFF --

0.2u

m0.

2um





AZ Confidential


FF --0.

4um

0.4u

mFF --

0.6u

m0.

6um

FF --0.

8um

0.8u

mFF --

0.2u

m0.

2um





AZ Confidential


FF --0.

4um

0.4u

mFF --

0.6u

m0.

6um

FF --0.

8um

0.8u

mFF --

0.2u

m0.

2um

AZ® TX1311 55cP Lithography Performance, 1.0µm Dense Contacts (1:1)




AZ Confidential


FF --0.

4um

0.4u

mFF --

0.6u

m0.

6um

FF --0.

8um

0.8u

mFF --

0.2u

m0.

2um

AZ® TX1311 55cP Lithography Performance, 0.70µm Dense Contacts (1:1)Process ConditionsProcess Conditions



AZ Confidential


FF --0.

4um

0.4u

mFF --

0.6u

m0.

6um

FF --0.

8um

0.8u

mFF --

0.2u

m0.

2um

AZ® TX1311 55cps Lithography Performance, 0.50µm Dense Contacts (1:1)Process ConditionsProcess Conditions



AZ Confidential

AZAZ®® VSVS--01HJ01HJShrink Technology for Shrink Technology for

Thick 248nm Thick 248nm PhotoresistPhotoresist ApplicationsApplications


AZ Confidential

AZAZ®® VSVS--01HJ01HJ ShrinkShrinkAZ TX1311, 0.40AZ TX1311, 0.40µµm Isolated Trench (1:5)m Isolated Trench (1:5)


CoatingCoating：： 200mm Silicon; 200mm Silicon; FTFT：： 4.04.0umum、、 SoftbakeSoftbake：： 140140ººCC/150sec/150secExposureExposure：： FPAFPA--3000EX5(NA=0.50,sigma=0.50)3000EX5(NA=0.50,sigma=0.50)PEBPEB：： 110110ººC/150sec; C/150sec; Develop:Develop: AZ 300MIF(2.38%), 23AZ 300MIF(2.38%), 23ººC/60 sec single puddleC/60 sec single puddle[VS Shrink:][VS Shrink:]Set BakeSet Bake：： 8585ººCC/70/70 sec; Mixing Bakesec; Mixing Bake：： 110110ººCC/70/70sec; Develop/Rinse:sec; Develop/Rinse: 112020 sec spraysec spray

AZ TX1311(55cP)AZ TX1311(55cP)

AZ VSAZ VS--01HJ01HJ

XX--sectionsection Top viewTop view

PhotoresistPhotoresistCD = 405.8nmCD = 405.8nm

After VSAfter VS--01HJ 01HJ CD = 228.3nmCD = 228.3nm

177.5nm177.5nmshrinkshrink


AZ Confidential

AZ TX1311(55cP)AZ TX1311(55cP) AZ VSAZ VS--01HJ01HJ

3.0um3.0um/0.75um/0.75um

22.0um.0um/0.50um/0.50umTX

1311 Litho toTX

1311 Litho toC

oating VS

Coating V

S-- 01H

J01H

J

After V

SA

fter VS

-- 01HJ B

ake01H

J Bake

and Develop/R

inseand D

evelop/Rinse

AZAZ®® VSVS--01HJ01HJ ShrinkShrinkAZ TX1311, Dense Post Shrink PerformanceAZ TX1311, Dense Post Shrink Performance


CoatingCoating：： 200mm Silicon; 200mm Silicon; FTFT：： 5.505.50umum、、 SoftbakeSoftbake：： 140140ººCC/150sec/150secExposureExposure：： FPAFPA--3000EX5 (NA=0.50,sigma=0.50)3000EX5 (NA=0.50,sigma=0.50)PEBPEB：： 110110ººC/150sec; C/150sec; Develop:Develop: AZ 300MIF(2.38%), 23AZ 300MIF(2.38%), 23ººC/60 sec single puddleC/60 sec single puddle[VS Shrink:][VS Shrink:]Set BakeSet Bake：： 8585ººCC/70/70 sec; Mixing Bakesec; Mixing Bake：： 110110ººCC/70/70sec; Develop/Rinse:sec; Develop/Rinse: 112020 sec spraysec spray


AZ Confidential

AZ VSAZ VS--01HJ01HJ SummarySummary

VSVS--01HJ with 01HJ with TX1311TX1311 demonstrates shrink in the 1demonstrates shrink in the 10000～～200n200nm range.m range.VSVS--01HJ is compatible with most 248nm 01HJ is compatible with most 248nm photoresistsphotoresists. The shrink amount . The shrink amount achieved will vary based on formulation.achieved will vary based on formulation.VSVS--01HJ is commercialized and in volume manufacturing.01HJ is commercialized and in volume manufacturing.

Documents

AZ® Electronic Materials Electronic Materials TX1311 Series · AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB,