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Application of Six Sigma Methodology to Optimize the Performance of the Inter-Metal Dielectric Process Authors: Chao-Ton Su, Chia-Jen Chou, and Li-Fei Chen Sources: IEEE Transactions on Semiconductor Manufacturing, Vol. 22, No. 2, pp. 297-304 Date: 12/27/2010

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Outline Introduction Case study Conclusions

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Introduction Background (inter-metal dielectric, IMD) (step coverage) (integrated circuit, IC)

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Introduction Motivation

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Introduction IMD 1. (line resistance, R) (parasitic capacitance, C) R/C 2. (open circuit) 3.

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Introduction Objective IMD

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Case study IMD (IMD performance improvement project) IMD IMD

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Case study Define Phase (thin film module) (quality assurance) (product engineering integration engineers) (process owners) IMD (CTQs)

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Case study (dies) (defects per unit, DPU) DPU 0.045 (cost of poor quality, COPQ) DPU 0.03 IMD (gap-fill ability) (VRDB) (fluorine contained)

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Case study (A/R) 3:1 5:1 3:1

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Case study (voltage-ramping stress test, VRDB) VRDB VRDB

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Case study IMD (Fluorosilicate glass, FSG) FSG (dielectric constant) 3.9 3.5

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Case study IMD (silicon rich oxide, SRO liner) (Fluorosilicate glass, FSG)1 (Fluorosilicate glass, FSG)2 (undoped silicon glass, USG) CMP CMP 1 2 & (Chemical Mechanical Polishing, CMP) (Global Planarization)

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Case study Measure Phase CTQ VRDB

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Case study Gauge R&R 7.02% 8.54% VRDB Individuals and Moving Range chart (I-MR) VRDB 8.33 30 (P-Value: 0.895) C pk 0.79 (VRDB) C pk 0.76 C pk 0.86 C pk 0 5 %GRR