On Compound Semiconductor - · PDF file11:40AM 6a.5DevelopmentandControlofa 0.25umGateProcessModuleforAlGaN/GaN HEMTProduction 143 Wei-Chou Wang, Chia-HaoChen, Jhih-HanDu, MingHungWeng,

2013

International Conference

On CompoundSemiconductor

MANufacturing TECHnology

Digest of Papers

May 13m - Iff", 2013

Hilton New Orleans Riverside

New Orleans, Louisiana, USA

Table of Contents

8:30 AM

8:55 AM

9:20 AM

9:45 AM

10:40 AM

11:05 AM

11:30 AM

Tuesday, May 14th

SESSION 1: PLENARY I - GaAs INDUSTRY OVERVIEW

Chair: Scott Sheppard, Cree, Inc.

InvitedPresentation

1.1 Challenges of Short Lifecycle Commercial Products in Compound Semiconductor

Manufacturing 3

Howard S. Witham, TriQuint Semiconductor

Invited Presentation

1.2 GaAs Foundry: Challenges and Future 7

DavidDanzilio, WIN Semiconductors Corp.


1.3 A Co-operative Business Model for Advancing Compound Semiconductor Technology 11

Jerry Curtis, Global Communication Semiconductors


1.4 GaAs Industry Overview and Forecast: 2011 - 2016 Abstract 13

Eric Higham, Strategy Analytics, Inc.

SESSION 2: PLENARY H - PHOTONICS IC VOLUME MANUFACTURING

Chair: David Wang, Global Communication Semiconductors


2.1 Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits 19

J. Pleumeekers, E. Strzelecka, K.-P. Yap, A. James, P. Studenkov, P. Debackere, T. Nguyen, S. Agashe,N. Kim, V. Lai, J. Won, C. Hill, Z. Wang, I. Dudley, A. Dentai, Q. Chen, D. Christini, R. Salvatore, D.

Lambert, M. Lai, M. Missey, R. Muthiah, J. Rossi, P. Liu, S. Craig, R. Schneider, M. Reffle, F. Kish,

Infinera Corporation


2.2 Multi-Guide Vertical Integration in InP -A Regrowth-Free PIC Technology for OpticalCommunications 23

Valery Tolstikhin, OneChip Photonics, Inc.


2.3 Heterogeneous Integration as a Manufacturing Platform for Photonic

Integrated Circuits 27

Eric Hall, Jae Shin, Gregory Fish, Aurrion, Inc.

CS MANTECH Conference, May 13th - 16th, 2013, New Orleans, Louisiana, USA xvii

SESSION 3: OPTOELECTRONICS TECHNOLOGIES

Chair: Yohei Otoki, Hitachi Cable, Ltd.

1:20 PM Invited Presentation

3.1 The Latest Progress ofNitride-based Visible LEDs and Laser diodes: Nonpolar and

Semipolar Devices vs. Polar (C-plane) Devices 31

Shuji Nakamura, University ofCalifornia, Santa Barbara


3.2 The Discovery of HJ-V Oxidation, Device Progress, and Application to Vertical-Cavity

Surface-Emitting Lasers 33

J. M. Dallesasse, University ofIllinois at Urbana-Champaign


3.3 Non-850nm Vertical Cavity Laser Applications and Manufacturing Technology 37

Klein Johnson, Vixar, Inc.


3.4 AlInGaN Based Deep Ultraviolet Light Emitting Diodes and Their Applications

Technology 41

AsifKhan, University ofSouth Carolina

SESSION 4a: PROCESS - BACKSIDE

Chair: Michelle Bourke, OxfordInstruments Plasma Technology

3:30 PM 4a.l Advances in Back-side Via Etching of SiC for GaN Device Applications 47

Anthony Barker1, Kevin RiddelV', Huma Ashrqf & Dave Thomas', Chia-Hao Chen2, Yi-Feng Wei2,1-Te Cho2 & Walter Wohlmuth2, 'SPTS Technologies,

2WIN Semiconductors Corp.

3:50 PM 4a.2 Meeting the Fabrication Challenges For Backside Processing on Thin Substrates with

Ultrahigh Device Topography 51

Pavan Bhatia1, Roberta Hawkins1, Jan Campbell1, Martin hie1, Alex Smith2, Mark Privett2, Gary

Brand2, 'TriQuint Semiconductor,2Brewer Science, Inc.

4:10 PM 4a.3 Wafer-level Backside Process Technology for Forming High-density Vias and Backside

Metal Patterning for 50-um-thick InP Substrate 55

Takuya Tsutsumi, Toshihiko Kosugi, and Hideaki Matsuzaki, NTTPhotonics Laboratories, NTT

Corporation

4:30 PM Student Presentation

4a.4 Full-Wafer, Small-Area Via-Hole Fabrication Process Development for Indium-Bearing IH-

V Heterostructure Devices 59

Yuning Zhao, Patrick Fay, University ofNotre Dame

xviii CS MANTECH Conference, May 13th - 16th, 2013, New Orleans, Louisiana, USA

SESSION 4b: PROCESS - LITHOGRAPHY

Chairs: Robert Mohondro, Plasma-Therm, LLC, Kamal Alavi, Raytheon

3:30 PM 4b.1 Thick Film Photo Resist Application Spun on Application v. Dry Film Lamination 65

Suzanne Combe, TriQuint Semiconductor

3:50 PM 4b.2 The Effect of Exposure Mode on Feature Resolution and Film Thickness for Thick (>10 urn)BCB 69

J. Parke, A. Gupta, J. Mason, K Renaldo, Northrop Grumman Electronic Systems

4:10 PM 4b.3 Final Module Yield Improvement by Increasing the Adhesion of SU8 to Microelectronic

Devices using a DMAIC Approach 73

Jan Campbell, Martin Ivie, Qizhi He, TriQuint Semiconductor

4:30 PM 4b.4 Automated Skiplot Sampling for Photoresist Thickness Measurement 77

David Punsalan, Donald Pursley, Christopher Roper, TriQuint Semiconductor

Wednesday, May 15th

SESSION 5a: RF GaNPRODUCEBELITY

Chairs: David Meyer, US Naval Research Laboratory, Glen "David" Via, Air Force Research Laboratory

8:00 AM Invited Presentation

5a.l Recent Defense Production Act Title HI Investments In Compound Semiconductor

Manufacturing Readiness 83

Gene Himes1, David Maunder2, Bruce Kopp2, 'Air Force Research Laboratory, 2David P. Maunder

Consulting

8:30 AM 5a.2 Raytheon Title HI Gallium Nitride (GaN) Production Program 87

Joseph Smolko, Colin Whelan, Christopher Macdonald, Joshua Krause, Bradley Mikesell, Michael

Benedek, Raytheon Corp.

8:50 AM 5a.3 Achieve Manufacturing Readiness Level 8 of high-power, high efficiency 0.25-fim GaN on

SiC HEMT Process 91

C. Delia-Morrow, C. Lee, K. Salzman, TriQuint Semiconductor

9:10 AM 5a.4 GaN-on-SiC MMIC Production for S-Band and EW-Band Applications 95

Ryan Fury, Scott Sheppard, Jeffrey B. Barner, Bill Pribble, Jeremy Fisher, DonaldA. Gajewski,Fabian Radulescu, Helmut Hagleitner, Dan Namishia, Zoltan Ring, Jennifer Gao, Sangmin Lee, Jim

Milligan andJohn Palmour, Cree, Inc.

9:30 AM 5a.5 GaN-based Components for Transmit/Receive Modules in Active Electronically Scanned

Arrays 99

Mike Harris, Robert Howard and Tracy Wallace, Georgia Tech Research Institute

CS MANTECH Conference, May 13th - 16th, 2013, New Orleans, Louisiana, USA

SESSION 5b: EPITAXY & MATERIALS

Chairs: Guoliang Zhou, Skyworks Solutions, Inc., Paul Pinsukanjana, IntelHEPI


5b.l A Comparison of MOVPE and MBE Growth Technologies for m-V

Epitaxial Structures 105

Rodney Pelzel, IQE Wireless

8:30 AM 5b.2 Impact ofcrystal-quality improvement ofepitaxial wafers on RF and power switchingdevices by utilizing VAS-method grown GaN substrates with low-density and uniformlydistributed dislocations 109

Yohei Otoki1, Takeshi Tanaka1, Hiroyuki Kamogawa1, Naoki Kaneda', Tomoyoshi Mishima1, Unhi

Honda2,and Yutaka Tokuda21Hitachi Cable, Ltd, 2Aichi Institute ofTechnology

8:50 AM Student Presentation

5b.3 Fe-doped AlGaN/GaN HEMTs: Kink-Effect Screening using Yellow Luminescence?..... 113

Nicole Killat*', Michael J. Uren1, David J. Wallis2, Trevor Martin3, and Martin Kuball1, '

University ofBristol, 2University ofCambridge, 3IQE PLC

9:10 AM 5b.4 Performance and Reliability of AlGaN/GaN HEMT on 100-mm SiC Substrate with

Improved Epitaxial Growth Uniformity 117

Sangmin Lee, Tim Kennedy, Christer Hallin, HelderAntunes, Brian Fetzer, Scott T. Sheppard, Al

Burk, Don A. Gajewski, Rick McFarland, Jim Milligan andJohn Palmour, Cree, Inc.

9:30 AM 5b.5 Development of an Epitaxial Growth Process on European SiC Substrates for a Low

Leakage GaNHEMT Technology with Power Added Efficiencies Around 65% 121

P. Waltereit', S. Muller1, L. Kirste1, S. Storm2, A. Weber2, J. Splettstdfier3, B. Schauwecker3,'Fraunhofer Institutefor AppliedSolid State Physics, 2SiCrystal AG,

3UnitedMonolithic

Semiconductors GmbH

SESSION 6a: GaN PROCESS, DEVICE, & CmCUITS

Chairs: Karen Moore, Freescale Semiconductor, Inc., Ming-yi Kao, TriQuint Semiconductor

10:20 AM 6a.l An Optical 0.25-um GaN HEMT Technology on 100-mm SiC for RF Discrete and FoundryMMIC Products 127

Simon M. Wood, Scott T. Sheppard, Fabian Radulescu, Don A. Gajewski, Bill Pribble, Donald Farrell,

UlfAndre Jeffrey B. Barner, Jim Milligan and John Palmour, Cree, Inc.


6a.2 Effect ofsputtered SiN passivation on current collapse of AlGaN/GaN HEMTs 131

Md. Tanvir Hasan, Toshikazu Kojima, Hirokuni Tokuda, and Masaaki Kuzuhara, University ofFukui

11:00 AM 6a.3 Investigation ofAlGaN/GaN HEMTs Passivated by A1N Films Grown by Atomic

Layer Epitaxy 135

A.D. Koehler1, N. Nepal1, T.J. Anderson', M.J. Tadjer2, K.D. Hobart1, C.R Eddy, Jr.1, F.J. Kub','Naval Research Laboratory, 2UniversidadPolitecnica de Madrid


6a.4 Fabrication Technology of GaN/AlGaNHEMT Slanted Sidewall Gates Using ThermallyReflowed ZEP Resist and CHFs/SFs Plasma Etching 139K. Y. Osipov, W. John, N. Kemf S. A. Chevtchenko, P. Kurpas, M. Matalla, O. Kriiger, andJ. Wiirfl,Ferdinand-Braun-Institut

xx CS MANTECH Conference, May 13th - 16th, 2013, New Orleans, Louisiana, USA

11:40 AM 6a.5 Development and Control of a 0.25um Gate Process Module for AlGaN/GaN

HEMT Production 143

Wei-Chou Wang, Chia-Hao Chen, Jhih-Han Du, Ming Hung Weng, Che-Kai Lin, Willie Huang, RickyChang, Shih-Hui Huang, Yi-Feng Wei, Stanley Hsieh, Michael Casbon, Paul J. Tasker, Wen-Kai

Wang, I-Te Cho, Walter Wohlmuth, WINSemiconductor Corp.

SESSION 6b: MANUFACTURING: TEST & CHARACTERIZATION

Chairs: Peter Ersland, M/A-COM Technology Solutions, Hidetoshi Kawasaki, Sony

10:20 AM 6b.l Low Turn-On Voltage Schottky Diode in InGaP/GaAs HBT/BiFET Processes 149

Cristian Cismaru andPeter J. Zampardi, Skyworks Solutions, Inc.

10:40 AM 6b.2 Device Characteristics Analysis of GaAs/InGaP HBT Power Cells Using Conventional

Through Wafer Via Process and Copper Pillar Bump Process 153

Hsiu-Chen Chang, Shu-Hsiao Tsai, Cheng-Kuo Lin, Tim Hsiao, Steven Chou, Chen, Pi-Hsia Wang,andDennis WilliamsJu-Yung, WINSemiconductors Corp.

11:00 AM 6b.3 Improved Vertical Probe Technology for Production Probing on Cu Pillar Bumps 157

Martin J. Brophy, Chin-Shun Chen, Keith Quick, Avago Technologies

11:20 AM 6b.4 Real-time Validation of Probe Contact Quality in GaAsPCM Testing 161

Martin J. Brophy, Phil Marsh, Anthony Martinkus, andJudy Huggenberger, Avago Technologies

11:40 AM 6b.5 Real Time Dynamic Application of Part Average Testing (PAT) at Final Test 165

Douglas Pihlaja, TriQuint Semiconductor

SESSION 7a: THERMALDESIGN I

Chair: John Blevins, Air Force Research Laboratory

1:30 PM InvitedPresentation

7a.l DARPA's Intra/Interchip Embedded Cooling (ICECool) Program 171

Avram Bar-Cohen1, Joseph J. Maurer2, Jonathan G. Felbinger2, 'Defense Advance Research Projects

Agency, 2Booz Allen Hamilton

2:00 PM 7a.2 GaNHEMT Near Junction Heat Removal 175

Rajinder Sandhu', Vincent Gambin1, Benjamin Poust1, Ioulia Smorchkova', Gregg Lewis', Raffi

Elmadjian', Danny Li', Craig Geiger', Ben Heying1, Mike Wojtowicz1, Aaron Oki', Tatyana

Feygelson2, Karl Hobart3, Bradford Pate3, Joe Tabeling4, Elah Bozorg-Grayeli5, Kenneth Goodson,

'Northrop Grumman Aerospace Systems, 2SAIC, 3Naval Research Laboratory, 4Applied Diamond, Inc.,

5Stanford University

2:20 PM 7a.3 A New High Power GaN-on-Diamond HEMT with Low-Temperature Bonded Diamond

Substrate Technology 179

P.C. Chao, K ChuandC. Creamer, BAE Systems

CS MANTECH Conference, May 13th - 16th, 2013, New Orleans, Louisiana, USA xxi

SESSION 7b: TRAPS & TRANSIENTS

Chairs: Tom Low, Agilent Technologies, Chang-Hwang Hua, WIN Semiconductors Corp.

1:30 PM InvitedPresentation

7b.l Correct Determination of Trap Densities at High-k/HI-V Interfaces 185

R. Engel-Herbert, Pennsylvania State University

2:00 PM 7b.2 Temporal Characterization ofDefects and Evolution of Strain in AIGaN/GaN HEMTs

Under Bias 189

H. Ghassemi', A. Lang1, C. Johnson2, R. Wang3, B. Song3, H. Xing3, andM. L. Taheri', 'Dept. ofMaterials Science and Engineering, Drexel University, 2Centralized Research Facilities, Drexel

University,3 University ofNotre Dame


7b.3 Study of Interfacial Charge Properties and Engineering of ALD dielectric/m-Nitride

Interfaces 191

Ting-Hsiang Hung, Michele Esposto, Digbijoy Neelim Nath, Sriram Krishnamoorthy, Pil Sung Park

and Siddharth Rajan, Dept. ofElectrical and Computer Engineering, The Ohio State University

2:40 PM 7b.4 GaN Buffer Design: Electrical Characterization and Prediction of the Effect of Deep Level

Centers in GaN/AlGaN HEMTs 195

M. Silvestri1, M. J. Uren', D. Marcon2, andM. Kuball', 'University ofBristol, 2IMEC

3:00 PM 7b.5 Ultra Fast Switching Speed FET Technology Development 199

Jerod Mason, Guoliang Zhou, Joe Bulger, Jay Yang, David Petzold, Dylan Bartle, Skyworks Solutions,

Inc.

SESSION 8a: THERMALDESIGN H

Chairs: Andy Souzis, II-VI, Martin Kuball, University ofBristol

3:40 PM 8a. 1 Process Improvements for an Improved Diamond-capped GaNHEMT Device 205

T.J. Anderson', A.D. Koehler', M.J. Tadjer2, K.D. Hobart', T.I. Feygelson3, B.B. Pate', F.J. Kub',1Naval Research Laboratory, 2Universidad Politecnica de Madrid, Spain, 3SAIC, Inc.

4:00 PM 8a.2 Ag/Diamond Composite Shims for HPA Thermal Management 209

Jason H. Nadler, Keri A. Ledford, H. Michael Harris and Brent K. Wagner, Georgia Tech Research

Institute

4:20 PM 8aJ Thermal and Mechanical Sensors for Advancement of GaN RFMMIC Technologies 211

B. Wagner1, H.M. Harris', M. King1, H. Chan1, N. Minor2 andL. B. Burns2, 'Georgia Tech Research

Institute, 2PEO Integrated Warfare Systems, Naval Sea Systems Command

4:40 PM 8a.4 GaN HEMTs for Power Switching Applications: from Device to System-Level Electro-

Thermal Modeling 215

Nicola Delmonte, Paolo Cova, and Roberto Menozzi, University ofParma

5:00 PM 8a.5 InGaP/GaAs HBT Safe Operating Area and Thermal Size Effect 219

Nick GM Too, Chien-Ping Lee, Tony St. Denis and Tim Henderson, TriQuint Semiconductor, Inc.

xxii CS MANTECH Conference, May 13th - 16th, 2013, New Orleans, Louisiana, USA

SESSION 8b: PROCESS - METAL

Chairs: Suzanne Combe, TriQuint Semiconductor, Jansen Uyeda, Northrop Grumman AS

3:40 PM 8b.l High Precision Thin Metal Film Measurement by Optical Transmission 225

Kezia Cheng, and Bing Hui Li, Skyworks Solutions, Inc.

4:00 PM 8b.2 SiN/Ge Lift-off: A Method for Patterning Films Deposited at High Temperature 229

D. J. Meyer1, D. A. Deen2, B. P. Downey', D. S. Katzer1, D. F. Storm1, andS. C. Binari', 'Naval

Research Laboratory,2University ofMinnesota

4:20 PM 8b.3 Palladium Diffusion Barrier Grown by Electoplating for Backside Cu Metallization ofGaAs

Devices 233

Daisuke Tsunami, Koichiro Nishizawa, Toshihiko Shiga, Tomoki Oku and Masayoshi Takemi,

Mitsubishi Electric Corporation

4:40 PM 8b.4 Optimization of Electroplating Processes for Copper Bumps 237

Elizabeth Tan Calora and Travis Abshere, TriQuint Semiconductor

5:00 PM 8b.5 Back Metal Optimization for PbSn Die Attach Assembly 241

Jose Suarez, Jason Fender, and Jenn-Hwa Huang, Freescale Semiconductor

Thursday, May 16th

SESSION 9a: WIDE BANDGAPPOWER DEVICES

Chairs: Toshihide Kikkawa, Fujitsu Laboratories, Shyh-Chiang Shen, Georgia Tech


9a.l High Temperature (> 200 °C), High Frequency Multi-Chip Power Modules 247

Ty McNutt, Brandon Passmore, Zach Cole, Bret Whitaker, Adam Barkley, Alex Lostetter, Arkansas

Power Electronics International, Inc.

8:30 AM 9a.2 Emerging Applications for GaN Transistors 251

David Reusch, Alex Lidow, Johan Strydom, Michael de Rooij, Efficient Power Conversion Corporation


9a.3 600 V High-Performance AlGaN/GaN HEMTs with AIN/SiNx Passivation 255

Zhikai Tang, Sen Huang, Qimeng Jiang, Shenghou Liu, Cheng Liu and Kevin J. Chen, The Hong Kong

University ofScience and Technology

9:10 AM 9a.4 600V-900V GaN-on-Si Process Technology for Schottky Barrier Diodes and Power Switches

Fabricated in a Standard Si-Production Fab 259

J.J.T.M. Donkers', S.B.S. Heil2, G.A.M. Hurkx1, H. Broekman3, R Delhougne', J.A. Croon2, D.

Gravesteijn', J. Sonsky', 'NXP Semiconductors Research, Belgium, 2NXP Semiconductors Research,

High Tech Campus, TheNetherlands, 3NXP Semiconductors Nijmegen, The Netherlands

9:30 AM 9a.5 182W L-band GaN High Power Module with 66% Power Added Efficiency Based on

European Technologies 263

Stephane Rochette', Olivier Vendier1, Dominique Langrez1, Jean-Louis Cazaux'', Michael Buchta2,Martin Kuball3, Alain Xiong4, 'Tholes Alenia Space, 2UMS GmbH,

3University ofBristol, 4AMCAD

Engineering

CS MANTECH Conference, May 13th - 16th, 2013, New Orleans, Louisiana, USA xxiii

SESSION 9b: LED OUTLOOK & TECHNOLOGY

Chairs: Ruediger Schreiner, Aixtron SE, Gene Kohara

8:10 AM InvitedPresentation

9b.l Low-Cost High-Efficiency GaN LEDs on Large-Area Silicon Substrates 269

Sir Colin J. Humphreys, University ofCambridge

8:40 AM InvitedPresentation

9b.2 How GaN-on-Si Could Disrupt the Current Equilibrium of the Booming LED Industry 273

Philippe Roussel, Yole Developpement

9:10 AM 9b.3 Improvement of LED Luminance Efficiency by Sapphire Nano PSS Etching 275

H. Ogiya, T. Nishimiya, M. Hiramoto, S. Motoyama, O. Tsuji, and P. Wood, Samco, Inc.


9b.4 Improvement in enhanced spontaneous emission ofResonance Cavity Light EmittingTransistors via Inductively Coupled Plasma Etching Top Distributed Bragg Reflector 279

Mong-Kai Wu, Michael Liu, and Milton Feng, University ofIllinois at Urbana-Champaign

SESSION 10a: MATERIALS: GaN EPI

Chairs: Judy Kronwasser, NOVASiC, Robert Sadler, Global Communications Semiconductors, LLC

10:10 AM lOa.l MOCVD Growth of AlGaN/GaN Heterostructures on 150 mm Silicon 285

Jie Su, Hongwei Li, Seungjae Lee, Balakrishnan Krishnan, Dong Lee, George Papasouliotis, and AjitParanjpe, Veeco MOCVD Operations

10:30 AM 10a.2 Uniformity Studies of AlGaN/GaN HEMTs on 200-mm Diameter Si(lll) Substrate 289

S. Arulkumaran1, G. I. Ng2, S. Vicknesh1, CM. Manojkumar1, K.S. Ang1, H. Wang2, M.J. Anand2, K

Ranjan', S. L. Selvaraf, W. Z. Wang3, G.-Q. Lo3, S. Tripathy4, 'Temasek Laboratories, NanyangTechnological University, 2Novitas, Nanoelectronics Centre ofExcellence, School ofEEE, NanyangTechnological University, 3A *star Institute ofMicroelectronics, 4A *star Institute ofMaterialsResearch and Engineering,

10:50 AM 10a.3 High Voltage GaN-on-Silicon HEMTs 293

T. Boles', C. Varmazis', D. Carlson1, L. Xia1, D. Jin1, T. Palacios2, G. W. Turner3, R. J. Molnar3, 'M/A

COM Technology Solutions, 2Massachusetts Institute ofTechnology, 3Massachusetts Institute ofTechnology, Lincoln Laboratory

11:10 AM 10a.4 High Voltage GaN-on-Silicon Schottky Diodes 297

T. Boles', C. Varmazis', D. Carlson', L. Xia', D. Jin', T Palacios2, G. W. Turner3, R. J. Molnar3, lMJA

COM Technology Solutions, 2Massachusetts Institute ofTechnology, 3Massachusetts Institute ofTechnology, Lincoln Laboratory


10a.5 Comparison of Schottky Diodes on Bulk GaN substrates & GaN-on-Sapphire 301

Pei Zhao, Amit Verma, Jai Verma, HuiliXing and Debdeep Jena, University ofNotre Dame

CS MANTECH Conference, May 13th - 16th, 2013, New Orleans, Louisiana, USA

SESSION 10b: PROCESS - INTEGRATION

Chair: Steve Mahon, Cascade Microtech, Inc.

10:10 AM lOb.l Layout Practices for Die Size Reduction on InGaP/GaAs HBT MMICs for Handset Power

Amplifier Applications 307

Shu-Hsiao Tsai, Rong-Hao Syu, Yu-Ling Chen, Wen-Fu Yu, Cheng-Kuo Lin, and Dennis Williams,

WIN Semiconductors Corp.

10:30 AM 10b.2 Evaluation of Material and Process Contributions to BiFET Variation UsingDesign ofExperiments 311

Peter J. Zampardi, Bin Li, Cristian Cismaru, Hal Banbrook, andAndre Metzger, Skyworks Solutions,

Inc.

10:50 AM 10b.3 Bulk Acoustic Wave Technology Advances 315

G. Fattinger, R. Aigner, P. Stokes, A. Volatier, F. Dumont, TriQuint Semiconductor

11:10 AM 10b.4 Heterointegration Technologies for High Frequency Modules Based on Film Substrates 319

Karlheinz Bock, Erwin Yacoub-George, Henry Wolf, ChristofLandesberger, Gerhard Klink, and Horst

Gieser, University ofBerlin

11:30 AM 10b.5 Passivation Stress versus Top Metal Profiles by 3D Finite Element Modeling 323

Xiaokang Huang, Liping Zhu, Bang Nguyen, Van Tran, Harold lsom, TriQuint Semiconductor

SESSION 11a: GaN GATE DIELECTRICS

Chair: Patrick Fay, University ofNotre Dame


11a.1 Characterization and Control of Insulated Gate Interfaces on

GaN-Based Heterostructures 329

Tamotsu Hashizume'2 and Masamichi Akazawa1, 'Hokkaido University, 2JST-CREST


lla.2 A Study on A1203 Deposition by Atomic Layer Deposition for Hi-Nitride Metal-Insulator-

Semiconductor Field Effect Transistors 333

Yi-Che Lee, Tsung-Ting Kao, andShyh-Chiang Shen, Georgia Tech University

2:00 PM lla.3 Thermal Oxidization of MIS Interface between Etched GaN and ALD-A1203 337

Tetsuya Fujtwara1, MinoruAkutsu1, Norikazu Ito1, Junichi Kashhvagi'', Kentaro Chikamatsu', Ken

Nakahara1, andMasaaki Kuzuhara2, 'ROHMCo., Ltd., 2University ofFukui


lla.4 High Performance Enhancement-ModeAlGaN/GaN MOSHEMT using Bimodal-Gate-

Oxide and Fluoride-Based Plasma Treatment 341

Liang Pang and Kyekyoon Kim, University ofIllinois at Urbana-Champaign

2:40 PM lla.5 Performance and Reliability of GaN MISHEMTs and MMICs Fabricated From GaN

Grown on High Resistance <111> Si Substrates by Molecular Beam Epitaxy 345

Jeffrey LaRoche, William Hoke, DavidAltman, James McClymonds, Paul Alcorn, Kurt Smith, Eduardo

Chumbes, JeffLetaw, and Thomas Kazior, Raytheon IDS Microelectronics

CS MANTECH Conference, May 13th - 16th, 2013, New Orleans, Louisiana, USA xxv

SESSION lib: YIELD ENHANCEMENT ANDMANUFACTURING

Chair: Marty Brophy, Avago Technolgies


llb.l Challenges of Equipment Support in a Factory with a Diverse

Multigenerational Toolset 351

David W. Brindza, Travis A. Abshere, TriQuint Semiconductor

1:40 PM 1lb.2 Factory Automation for Overall Fab Efficiency 355

Nirav Thakkar, Skyworks Solutions

2:00 PM llb.3 Optimizing Staff Levels Using Linear Programming 359

Marino Arturo andAriel Meyuhas, MAXI.E.G.

2:20 PM llb.4 Yield Learning of a GaAs-Based High-Throw-Count Switch for Handset Applications ..363

Tertius Rivers, Corey Nevers, Chi-hing Choi, Hui Liu, TriQuint Semiconductor

2:40 PM llb.5 Combining Visual Inspection and Bare Die Packaging for High Volume Manufacturing369

Chang'e Weng and Thorsten Saeger, TriQuint Semiconductor

SESSION 12: POSTER SESSION

Chairs: Kelli Rivers, Materion, Corey Nevers, TriQuint Semiconductor, Jansen Uyeda, Northrop Grumman AS

3:00 PM 12.1 How Mask Data Error Rate Maintained at below 0.1% While Volume Increased 2+ Folds -

- 4:00 PM Through Automation 375

Susie Ross, Tin Ko, Jianli Fu, Hongxiao Shao, Skyworks Solutions, Inc.

Student Presentation

12.2 Yield Improvement in Fabrication of Edge Emitting Transistor Lasers by Optimized BCBPlanarization 379

Rohan Bambery and Milton Feng, University ofIllinois at Urbana-Champaign

12.3 Development of PVD-A1N Buffer Process for GaN-on-Si 383

Frank Cerio, Arindom Datta, Adrian Devasahayam, Boris Druz, Veeco Instruments


12.4 GaN MOSHEMT Using Sputtered-Gate-Si02 and Post-Annealing Treatment 387

Liang Pang1, Yaguang Lian', Dong-Seok Kim2, Jung-Hee Lee2, and Kyekyoon Kim1, 'University ofIllinois at Urbana-Champaign, 2Kyungpook National University, Korea

12.5 Process-Reliability Relationships in GaN and GaAs Field Effect Transistors and HFETs391

A. Christou, University ofMaryland

12.6 Formation of slanted Gates for GaN-based HEMTs by Combined Plasma and Wet

Chemical Etching of Silicon Nitride 395

A. Thies, N. Kemf, S.A. Chevtchenko, and O. Kriiger, Ferdinand-Braun-Institut-Berlin

12.7 Deposition Control During GaN MOVPE 399

D. Fahle', T. Kriicken2, M. Dauelsberg2, R. Schreiner2, H. Kalisch', M. Heuken12 and A. Vescan1,'RWTHAachen University, 2ALXTRON SE

xxvi CS MANTECH Conference, May 13th - 16th, 2013, New Orleans, Louisiana, USA

12.8 Heterogeneous Integration Schemes of Compound Semiconductors for Advanced CMOS

and More-than-Moore Applications 403

T. Uhrmann, T. Matthias, T. Glinsner, V. Dragoi, T. Plach, E. Pabo, M. Wimplinger and P. Lindner,EV Group


12.9 Methods ofImproving GaN-Based LED Luminous Efficiency 407

Liang-Yu Su and JianJang Huang, National Taiwan University


12.10 Current Gain Enhancement of Light-Emitting Transistors Under Different

Ambient Temperatures 411

Wen-Chung Tu and Chao-Hsin Wu, National Taiwan University

12.11 BCB Encapsulation for High Power AlGaN/GaN-HFET Technology 415

P. Kurpas, O. Bengtsson, S. A. Chevtchenko, I. Ostermay, R. Zhytnytska, W. Heinrich, J. Wiirfl,Ferdinand-Braun-Institut-Berlin

12.12 Recent Developments in Real-Time Thickness Control ofPlasma Deposited Thin Film

Dielectrics Using Optical Emission Interferometry 419

Kenneth D. Mackenzie, David J. Johnson, Christopher W. Johnson, and Linnell Martinez, Plasma-

Therm, LLC

12.13 Reducing Defects Using a 5x Stepper in Pattering 80 fim SU8 on MEMS Devices 423

Jean-Franqois Bedard, Jan Campbell, Martin Ivie, Elda Clarke and Gary Head, TriQuintSemiconductor

12.14 Back to the Future: How Implementing Retro-Style Processing Can be

an Improvement 427

Martin Ivie, Jan Campbell, Qizhi He, TriQuint Semiconductor


12.15 Growth and Characterization of Band Gap Engineered InGaAs/InAlAs/GaAs HighElectron-Mobility Quantum Well Structure Towards Low Leakage VLSI Applications 431

U. P. Gomes', Y. Chen2, Y.KYadav1, S. Ghosh', S. Chowdhury', P. Mukhopadhyay', P. Chow2 and D.

Biswas', 'Indian Institute of Technology Kharagpur, 2SVTAssociates

12.16 Developing a Fundamental Understanding of Gold Spitting During Evaporation 435

Alan Duckham', Lawrence Luke2, Robert Sprague ,'Materion Microelectronics & Services, 2Materion

Barr Precision Optics & Thin Film Coatings

12.17 Power Output of Multijunction Solar Cell Wafers 439

Onur Fidaner and Michael W. Wiemer, Solar Junction Corporation

12.18 Integrating a Control Plan Methodology into an MES System to Enhance Ease of

Process Control 443

Lesley Cheema, Jason Welter, Nicolas Awad, TriQuint Semiconductor

Author Index 447

Acronyms, Abbreviations, and Chemical Names 453

CS MANTECH Conference, May 13th - 16th, 2013, New Orleans, Louisiana, USA xxvii

Documents

On Compound Semiconductor - · PDF file11:40AM 6a.5DevelopmentandControlofa 0.25umGateProcessModuleforAlGaN/GaN HEMTProduction 143 Wei-Chou Wang, Chia-HaoChen, Jhih-HanDu, MingHungWeng,