ALD FOR INDUSTRY · 2020. 12. 1. · Adeka : ALD Precursor Developments for Mass Production of Future Semiconductor Devices, Akihiro Nishida ASM International: Materials Evolution

ALD FOR INDUSTRY

DECEMBER 02 – 03, 2020

PROGRAM BOOKLET

4th Workshop & Tutorial

WITH INDUSTRIAL EXHIBITION AND

COMPANY TOURS - DIGITAL EVENT

3

Content

Program Committee 4

PREFACE 5

PROGRAM Wednesday, December 2, 2020 6

Jonas Sundqvist 8

Dmitry Suyatin 15

Nils Boysen 16

Henrik Pedersen 17

Nicolas Blasco 18

Christoph Hossbach 19

Ganesh Sundaram 20

Kalle Niiranen 21

De Jonghe Veronique 22

PROGRAM Thursday, December 3, 2020 23

Martin Knaut 25

Linda Jäckel 26

Tobias Törndahl 27

Rémy Gassilloud 28

Joël Matthey 29

Sascha Bönhardt 30

Maksym Plakhotnyuk 31

Jacques Kools 32

Bernd Hintze 33

Paul Plate 34

Aileen O'Mahony 35

Industrial Exhibition 36

List of Attendees 46

EFDS-Membership 49

Industrial Collective Research 50

Participate in our 4 Technical Committees 51

Next EFDS-Events 52

Imprint

Organizer

European Society of Thin FilmsGostritzer Straße 63

01217 Dresden

Germany

Tel: +49 351 8718370

[email protected]

www.efds.org

Co-Organizer

ALD Lab [email protected]

www.ald-lab-saxony.de

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4 PROGRAM BOOKLET | ALD FOR INDUSTRY | December 2 – 3, 2020PROGRAM COMMITTEE

PROGRAM COMMITTEEDr. Jonas Sundqvist

BALD Engineering AB Dresden, Germany

Dr. Henry Bernhardt Infineon Technologies Dresden GmbH, Dresden, Germany

Dr. Christoph HossbachPicosun Oy and Picosun Europe GmbH, Dresden, Germany

Dr. Lukas Mayr BASF SE, Ludwigshafen, Germany

Bernd HintzeResearch Fab Microelectronics Germany (FMD), Dresden, Germany

Dr. Katrin Ferse European Society of Thin Films (EFDS), Dresden, Germany

Data Privacy Statement: According to your consent during the online registration a list of participants with name and company affil-iation was created and published exclusively in the conference proceedings. The data is collected according to the data privacy statement of the European Society of Thin Films. You can find the data privacy statement under: https://www.efds.org/datenschutz.

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5PREFACE

PREFACEA topical workshop with focus on industrialization and commercialization of ALD for current and emerging marketsAtomic Layer Deposition (ALD) is used to deposit ultra-conformal thin

films with sub-nm film thickness control. The method is unique in the

sense that it employs sequential self-limiting surface reactions for growth

in the monolayer thickness regime. Today, ALD is a key technology in

leading edge semiconductor technology and the field of application in

other industries is increasing rapidly. According to market estimates the

equipment market alone is currently at an annual revenue of US$

1.8-1.9 billion (2018) and it is expected to double in the next 4-5

years.

In a European context ALD was invented independently twice in Europe

(Russia & Finland) and since the last 15 years Germany has grown to

become one of the strongest European markets for ALD in R&D, chem-

icals, equipment and end users.

This year we will organize the 4th EFDS “ALD For Industry Workshop” –

digital. ALD for Industry provides the opportunity to get in contact with

industrial and academic partners, to learn more about fundamentals of

ALD technology and to get informed about recent progress in the field.

The Event will focus on the current markets for ALD and addresses the

applications in Semiconductor industry, MEMS & Sensors, Battery

Technology, Medical, Display, Lightning, Barriers and Photovoltaics.

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6 PROGRAM BOOKLET | ALD FOR INDUSTRY | December 2 – 3, 2020PROGRAM | DECEMBER 2, 2020

PROGRAM Wednesday, December 2, 2020

13:00 Opening & Tutorials

13:10 Current and Emerging ALD Processes, Precursors, IP Trends and Applications in High Volume ProductionJonas Sundqvist, BALD Engineering AB, Värmdö, Sweden

13:30 ALE for NanopatterningDmitry Suyatin, Lund University, Lund, Sweden

13:50 Precursor Chemistry for the ALD of Functional Thin Films: Synthesis, Evaluation and ApplicationsNils Boysen, Ruhr-Universität, Bochum, Germany

14:10 Break

14:40 Workshop Session

14:40 Keynote Lecture When Time-Resolved CVD Outperforms Continous CVD-ALD as the Enabler for InN Based ElectronicsHenrik Pedersen, Linköping University, Sweden

15:10 ALD of Noble Metals – Challenges & Perspectives for Ru and Pt ALD PrecursorsNicolas Blasco, Air Liquide, Paris, France

15:30 ALD for Challenging 3D Structures: Industrial ApplicationsChristoph Hossbach, Picosun Oy and Picosun Europe GmbH, Dresden, Germany

15:45 Break

12:00 – 13:00 Warm-UpRegistration, technical support & networking

14:20 – 14:40 Market Place & Meeting RoomsNetworking and topical discussion

Opening of Market Place Break Room – Who is Who?

Market Place Tutorial – Talk | Q & A

7PROGRAM | DECEMBER 2, 2020


16:15 Batch ALD for 5G High Volume ApplicationsGanesh Sundaram, Veeco Instruments, Waltham, USA

16:30 Industrial Production of Moisture Barrier Coatings by Atomic Layer DepositionKalle Niiranen, Beneq Oy, Espoo, Finland

16:45 Conformal Thick Dielectric Deposition on 3D Structures at CVD SpeedVeronique De Jonghe, Plasma-Therm, St. Petersburg, USA

17:00 End of official program – day 1

17:00 – 18:00 AFTER WORK Meeting & ALD Quiz

15:55 – 16:15 Market Place & Company TourTour, networking & topical discussion

Market Place

digital Company Tour at FHR Anlagenbau GmbH

8 PROGRAM BOOKLET | ALD FOR INDUSTRY | December 2, 2020TUTORIAL

Current and Emerging ALD Processes, Precursors, IP Trends and Applica-tions in High Volume ProductionALD is critical in leading the emiconductor technology, and the field

of application in other leading-edge industries is increasing rapidly.

According to market estimates, the equipment market alone is currently

at an annual revenue of approaching US$ two billion, and it is expected

to double in the next 4-5 years. Having been extensively studied over

three decades for the replacement of silicon dioxide (SiO2) in conven-

tional semiconductor fabrication, ALD hafnium oxide, among other

high-k dielectrics was finally adopted by Samsung in 2004 in high

volume manufacturing at the 90 nm DRAM node as the high-k capacitor

dielectric. The other DRAM companies followed, and later in 2007,

Intel introduced ALD HfO2 at the 45 nm node as a high-k gate dielectric.

These events lead to a boom in the ALD equipment and precursor

market, which was followed by additional processes, precursors,

materials, and applications for ALD in in additional industries, which

will be given in the presentation.

Jonas Sundqvist, Ph.D. – Senior Technology Analyst at TECHCET LLC CA,

has over 20 years of work experience includes Group Leader of the

Thin-Film Technologies Group at The Fraunhofer Institute for Ceramic

Technologies and Systems (IKTS) and of the High-k devices group at

Fraunhofer’s Center Nanoelectronic Technologies (CNT), which included

28nm node work for GLOBALFOUNDRIES Fab1. At Infineon Memory

Development Centre (MDC) he developed high-k and metal nitride ALD

processes, and at Qimonda he was a materials manager focused on

the ALD / CVD precursors supply-chain. He is the founder of BALD

Engineering, an independent blog and networking platform for ALD.

He holds a Ph.D. and a M.S. in inorganic chemistry from Uppsala

University, Sweden and a degree in electrical and electronics engineering

from Lars Kagg, Kalmar, Sweden, and nine patents and >40 Publications.

Jonas Sundqvist

Senior Technology Analyst | BALD Engineerining AB / TECHCET LLC CA

9TUTORIAL

PRESENTATION

AALLDD//CCVVDD PPrreeccuurrssoorr AApppplliiccaattiioonnss && MMaarrkkeett TTrreennddss

Jonas Sundqvist, PhDSenior Market Research Analysts

EFDS ALD for Industry, Dresden, GermanyDecember 2, 2020

www.techcet.com EFDS ALD for Industry, Dresden, Germany

December 2, 2020

Copyright 2020 TECHCET CA LLC all rights reserved [email protected]

OutlineSemiconductor – Wafer start forecast driving the CVD & ALD precursor market

Leading Edge LogicDRAM3DNAND

Cobalt for LogicRuthenium for LogicIP Filing in the ALD/CVD Space

Applications & FabricatorsPrecursor SuppliersEquipment ManufacturersCobalt CVD/ALDArea Selective Deposition and Etch

Emerging Metals



December 2, 2020


Recap - Updates during CMC2020“TECHCET and The CMCFabs are very happy to have the Top 3 Companies in the Precursor market and The Leading OEMs ASM International and Tokyo Electron presenting at CMC2020”

Air Liquide: New Etching Gases for Advanced Memory Manufacturing, Ashutosh Misra, PhD

MERCK: Selectors for Emerging Memories: How Are They "Materially" Different?, Milind Weling

Adeka: ALD Precursor Developments for Mass Production of Future Semiconductor Devices, Akihiro Nishida

ASM International: Materials Evolution & Challenges In ALD/EPI FEOL, Pamela Fischer, PhD

Tokyo Electron: Selective Deposition for Advanced Patterning, Kandabara Tapily, PhD



December 2, 2020

Drive for ALD/CVD – 300mm Wafer Fabs

3DNAND growth and lateral scaling >196 Layers will continue to drive demand for silicon specialty gases, W, Ti, and Etch gases.

Leading-edge Logic drives growth for e.g. Si, Hf, Ti, Ta, W & Co

DRAM cyclic and flat; will contribute slightly less than before (Si, Al, Ti, Zr, Hf, Nb) -

20

40

60

80

100

120

140

160

180

200

0%10%20%30%40%50%60%70%80%90%

100%

2017 2018 2019 2020 2021 2022 2023 2024

TECHCET 2020-3Q release- Annual Wafer Starts (Millions of 200mm Equivalent / Year Including Utilization)

Logic 45 and below - DRAM 65 and below -

3D NAND - Total Leading Edge 300mm

3DNAND

DRAM

Logic



December 2, 2020

Cobalt for LogicCobalt PECVD was introduced as copper barrier/seed and selective cap replacing CoWP caps at the 14/16nm Logic node

Main Co Applications today

1. Co Liner

2. Co Cap

3. Co Contact →→

4. Co Via/Lines →→



December 2, 2020

11TUTORIAL

To CVD or to Plate – that´s the question



December 2, 2020

Ruthenium for LogicRuthenium has been evaluated for DRAM and Logic for 20 years

Precursor Supplier Vapor pressure Pro ConRu(EtCp)2 All ~1 Torr @90°C POR Nucleation

DER Tosoh ~1 Torr @90°C Improved nucleation

Cost

ToRuS Air Liquide 25 Torr @RT High VP CVD-type

Ru3(CO)12 All ~0.1 Torr @70 °C

TRuST Tanaka ~ 1 Torr @RT High VP Un proven


TRuST


December 2, 2020

IP Filing in the ALD/CVD for Electronic Applications


Tracked Fabricators in the TECHCET CVD/ALD IP DATABASE

Fewer Leading edge fabs

Who is filing what and when?OEMs: AMAT, TEL, LAM, ASM, …Supplier: Air Liquide, ADEKA, MERCK, …Material: Si, Hf, Co, Ru, Nb, …Fabricator: Samsung, Intel, TSMC, Micron, …

0 500 1000 1500 2000 2500 3000 3500 4000 4500

Hynix Semiconductor Inc.

Taiwan Semiconductor MFG Co. Ltd.

Micron Technology Inc.

IBM

Toshiba KK

Intel Corp.

Sony Corp.

NEC Corp.

Sharp KK

Siemens AG

Bell Semiconductor LLC

Magnachip Semiconductor Ltd.

Freescale Semiconductor Inc.

IP Since 1907 in the CVD/ALD by Semi Fabricators

Grants Applications Families



December 2, 2020

Example: Co Precursor IPThe Top 3 precursor suppliers leads the has 57% of the Co patent families for ALD/CVD applications used in electronic devices:

1. MERCK

2. Air Liquide

3. Adeka

26%

20%

11%8%

8%

7%

7%

5%4% 4%

Chemical Supplier, Patent Families2000-2020

MERCK(Versum, IM)

AIR Liquide

Adeka Corp.


December 2, 2020


EXAMPLE: IP Filing in Selective Deposition and Etch

13TUTORIAL

EXAMPLE: IP Filing in Selective Deposition and Etch

0

100

200

300

400

500

600

1974

1977

1980

1983

1986

1989

1992

1995

1998

2001

2004

2007

2010

2013

2016

2019

IP filed for Selective Deposition since 1974

Families Applications Grants 0

10

20

30

40

50

60

70

80

90

100

Families

Pate

nt F

amili

es

Top 20 Family AssigneesApplied Materials

IBM

Taiwan Semiconductor MFG Co. Ltd.

Globalfoundries Inc.

ASM International

Tokyo Electron Ltd.

Canon Inc.

Micron Technology Inc.

LAM Research Corp.

Intel Corp.

3D Systems Inc.

Samsung Electronics Co. Ltd.

Lam Research

United Microelectronics Corp.

Microfabrica Inc.

Commissariat A Lenergie Atomique ET AUX EnergiesAlternativesTexas Instruments Inc.

Sandisk Technologies LLC

Infineon Technologies AG

Motorola Inc.



December 2, 2020

Forecast: Metal/High-k Precursors• Healthy growth in all

segments and especiallyCo and Hf

• Ruthenium will grow to an US$10 M in 2025 ifimplemented in leadingedge nodes. Front ups arecontinued use of Co and W.

• Nb is currently only in useby one DRAM maker, segment is < US$1M

• Slowed growth 2022 due to DRAM

0

100

200

300

400

500

600

700

800

2013 2014 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024

Total ALD/CVD High-k & Metal Precursor Market 2014 to 2024

Total Ru (n.n)

Total Zr (ZrCp, TEMAZr)

Total Al (TMA, AlCl3)

Total Hf (HfCl4)

Total Co (CoCOCp, CCTBA)

Total Ti (TDMAT, TiCl4)

Total Ta (PDMAT)

Total W (WF6)



December 2, 2020

Forecast: Dielectric PrecursorsHealthy growth in all segments

Less growth in 2020 ascompared to Metal/High-k precursors due to large dependence on legacynodes

Continued growth in Multi-Patterning precursors(DIPAS/BDEAS)

3DNAND layer stacking driving dielectric segment up (e.g. TSA and HCDS)0

100

200

300

400

500

600

700

800

2014 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024

Dielectric Precursor Market 2014 to 2024

BTBAS

DIPAS/BDEAS(SAM24)

TSA

HCDS

TEOS

3MS, 4MS

Low k, interconnect

SOD



December 2, 2020


Emerging Materials

Metal Lines, Barriers and Via Fills

IBM Lanzillo IITC 2020

Metal/Barrier Barrier/Fill Source. Cobalt Via Fill HVM Co/Zr Barrier layer Tohoku University

Bilayer hex-TaN/a-Ta barrier Barrier Layer Lanzillo

Ruthenium Via Fill IMEC Cu/Ru(Zn) Barrier Adhesion LAM/Fudan

Molybendum

NI/Cu Line RPI Ni/Al Line IMEC

Rh/Ir line RPI

Selective W Via Fill AMAT

MOL type Example for Via and Line



December 2, 2020

Summary

Healthy growth in all segments and especially Co and HfDRAM position as driver for CVD and ALD processes taken over by 3DNAND and Logic, which is seen in both Wafer starts and IP-filing

Most potential for new metal precursors currently in interconnects for logic

New metals emrging: Ru, Ir, Mn, MoSelective deposition will be key for success



December 2, 2020

Thank You!Tack så mycket!

Jonas Sundqvist, [email protected]

[email protected]

[email protected]

www.techcet.com CMC2020 Hillsboro, October, 2020


15TUTORIAL

ALE for NanopatterningToday the progress in advanced electronics demands atomic precision

control of device processing. Etching is a process in the semiconductor

industry which is used to remove unwanted material and over decades

development of advanced plasma based etching has been critical for

enabling downscaling of electronic components. Atomic Layer Etching

(ALE) is an atomic precision etch process based on cyclic self-limiting

steps. This separation of etch process into small discreet steps pro-

vides an unprecedented control over material etch and can provide

a damage-free etch process. Often ALE is considered as a counterpart

to atomic layer deposition (ALD) process. The high degree of process

control makes ALE to be very important now for fabrication of leading

edge electronic components. In this talk a review of recent progress

in applications of ALE processes for nanopatterning will be presented.

Dmitry Suyatin received a PhD degree in physics and mathematics from

Moscow State University in 2009 for technology and studies of electron

transport in semiconductor nanowires. Dr. Suyatin is a co-founder

and CTO of AlixLabs and has over 15 years of interdisciplinary experience

in advanced processing of nanostructures. He authored more than

30 peer reviewed papers. Lately his research interest was primarily in the

development and applications of Atomic Layer Etching (ALE) processes.

Dmitry Suyatin

Research engineer | Lund University


Nils Boysen received his M. Sc. in Chemistry under the supervision of

Prof. Dr. Anjana Devi (Inorganic Materials Chemistry) at the Ruhr Uni-

versity Bochum. Currently, he is employed as a research associate in

the Devi Lab (Inorganic Materials Chemistry). The main focus of his

work lies in the development of new coinage metal (Cu, Ag) precursors

for demanding spatial atomic layer deposition (sALD) techniques and

the formation of ultra-thin metal films. Further, he is interested in

improving thermal ALD processes for the formation of rare-earth oxides

thin films by rational precursor design.

Precursor Chemistry for the ALD of Functional Thin Films: Synthesis, Evaluation and Applications

The fabrication of functional thin films for various applications by

atomic layer deposition (ALD) plays a crucial role in the micro- and

optoelectronic industry. One of the most important factors during

the deposition of functional thin films with the afore-mentioned

techniques is the behavior of the chemical precursor during evaporation,

transport and interaction with the substrate. The thermal properties,

reactivity and stability of the precursor not only influences the ALD

process, but also the functional properties of the resulting thin films

that form an important figure of merit for farbicating thin films that

are applicable in micro- and optoelectronic devices. This presentation

should give an overview on the opportunities and challenges associ-

ated with rational precursor design for the application in ALD processes.

Nils Boysen

Wissenschaftlicher Mitarbeiter / Research Associate

Inorganic Materials Chemistry, Ruhr University Bochum

17WORKSHOP

When time-resolved CVD outper-forms continuous CVD – ALD as the enabler for InN based electronics

Indium nitride (InN) is highly interesting for high frequency and high

speed electronics given the very high electron mobility in InN. The

development of InN based electronics is currently hampered by the

difficulty in depositing high quality thin films. The InN crystal breaks

down to In metal and nitrogen gas at about 500 °C which limits the

deposition temperature, making conventional chemical vapor deposi-

tion (CVD) poorly suited for InN. In my talk I will describe our work on

ALD of InN films where we focus on ALD process development and de-

sign of new precursors. We can show that ALD is an enabling technol-

ogy for InN based electronics and is capable of depositing continuous,

epitaxial InN films. I will describe our results on epitaxial growth of

InN by ALD, our latest results using our newly invented In precursor

and early results on ALD grown device-like structures with and InN

channel.

Henrik Pedersen received his M.Sc. in Chemistry in 2004 and his Ph. D.

in Materials Science in 2008, both from Linköping University in Sweden.

After a stint as industrial researcher at Sandvik Tooling Research and

Development center in Stockholm, Sweden, he returned to academia

and is today Professor of Inorganic Chemistry at Linköping University.

He has during the past decade been exploring CVD for electronic ma-

terials, hard coatings, and neutron detectors. His research is focused

on understanding and developing new and better chemical vapor

deposition methods by considering the time dimension in CVD, devel-

oping new precursors and new ways to use plasmas in CVD.

Henrik Pedersen

Professor | Linköping University, Sweden

18 PROGRAM BOOKLET | ALD FOR INDUSTRY | December 3, 2020WORKSHOP

ALD of Noble Metals – Challenges & Perspectives for Ru and Pt ALD Precursors

In the last 10 years, Ruthenium ALD has raised considerable interest

owing to attractive Ru metal bulk properties, such as low resistivity,

high work function, and high thermal/chemical stability. However, its

industrial application have remained limited due to cost vs. benefit.

More recently, Ru ALD triggered renewed interest in the semiconductor

industry with specific focus on selective deposition, through a variety

of strategies going from surface inhibition, nucleation control via ALD

precursor tailoring, as well as artificial constrast increasing by etch-back.

In this talk, we will first review existing and new Ru ALD precursors,

with focus on their advantages and drawback from an industrialization

viewpoint, and then illustrate selective deposition approaches for

advanced devices through several case studies.

Nicolas Blasco has over 15 years of experience in the ALD field at Air

Liquide, and experience ALD industrialization from its infancy to its

current massive deployment. Within AL, Nicolas held various positions

of increasing responsibilities in R&D, business development, technolo-

gy direction, and is now in charge of advanced materials applied to

emerging markets. He is International Senior Expert of the AL group

and holds over 15 granted patents, several of them having matured

to large scale industrialization.

Nicolas Blasco

Director, Technology and Emerging Markets

Air Liquide Advanced Materials

19WORKSHOP

ALD for Challenging 3D Structures: Industrial Applications

In this talk we give an overview on typicall applications in the field

of industrial ALD for challenging 3D structures and on the recent

developments at Picosun. Additionally, we present selected applica-

tions in more detail. Here one focus is on three-dimensional

MIM capacitors with aspect ratio of up to 1:100 and area capacity of

1 µF/mm². In this application ALD allows uniform deposition of TiN

electrodes and alumina or alumina hafnia nanocoatings resulting

in 3D microcapacitors with excellent energy density and device per-

formance. Another promissing application for ALD batch coatings is

in the field of thin-film solid-state batteries where ALD-grown titania

can act as ultra-conformal electrode material in fast-charging Lithium

microbatteries with high capacity. A macroscale 3D application of ALD

is in the field of medical device coating. We give an update on selected

work at Picosun in the field of hermetic encapsulation.

Christoph Hossbach obtained his Dr.-Ing. in Electrical Engineering

in 2013 with a thesis on ALD and PEALD. Since 2017 he is General

Manager at Picosun Europe GmbH responsible for Germany, Austria

and the Netherlands. Earlier he worked as a Senior Scientist at TU

Dresden, IHM. His fields of expertise include Atomic and Molecular

Layer Deposition, Chemical Vapor Deposition, metrology, as well as

tool and component design. Dr. Hossbach is co-founder of ALD Lab

Saxony and was involved in teaching and consulting.

Christoph Hossbach

General Manager | Picosun Europe GmbH


Batch ALD for 5G High Volume Applications

The recent advances in RF and optical technologies, that support the

rapid expansion of devices within the framework of 5G communica-

tions, has in turn sparked a strong interest in the use of Atomic Layer

Deposition (ALD) for a variety of applications. These applications, in

addition to exploiting the salient features of the ALD films, have also

placed stringent requirements on the actual deposition system, in

terms of performance, throughput, and handling.

This presentation will explore some select applications, as well as

elements of the system design which are optimal for high volume

manufacturing (HVM) use.

Ganesh Sundaram is currently Vice-President of Applied Technology

at Veeco Instruments. He is responsible for the research and develop-

ment activities of Veeco’s Atomic Layer Deposition business unit.

Dr. Sundaram holds a Ph.D in condensed matter physics from the

University of Oxford. Prior to his work at Veeco, he held scientific

positions at Ultratech, Cambridge NanoTech, Schlumberger Technolo-

gies, and Texas Instruments.

Ganesh Sundaram

Vice President of Applied Technology | Veeco

21WORKSHOP

Industrial production of moisture barrier coatings by Atomic Layer Deposition

Moisture penetration presents a challenge for electrical component

lifetimes, particularly in high-temperature and high-humidity environ-

ments. ALD offers a coating solution based on dense, conformal and

pin-hole free dielectric thin films. This talk explores the industrial

production of moisture barrier coatings deposited using large-batch

ALD. We look at the overall application and its requirements, while

showcasing practical production through a case example of moisture

barrier coatings on printed circuit board assemblies (PCBAs).

MSc. (Tech.), Materials Science and Engineering (Aalto University,

Finland). Currently the Technical Sales Manager for central Europe at

Beneq Oy. 4+ Years Experience in Process Development and scaling to

industrial production utilizing Atomic Layer Deposition.

Kalle Niiranen

Technical Sales Manager | Beneq Oy


Conformal thick dielectric deposi-tion on 3D structure at CVD speed

New applications based on 3D TSV and Mems structures require con-

formal and thick films deposition of hundreds of nanometers. Our

technology named ‘FAST’ for Fast Atomic Sequential Technology precisely

addresses these requirements thanks to its pulsed CVD technology.

Compatible with conventional and innovative Metallo-organic precur-

sors as well as gases, FAST already offers a wide range of oxide layers

(SiO2, ZnO), nitrides (SiN, TiN) and metal (Cu, Co) deposition. By ad-

justing pulses duration and frequency of the precursor and reactant

injection, properties of the layers can be optimized, and conformality

can be engineered and tuned.

For example, a conformal and thick layer deposition is 10 times faster

by FAST than ALD, (deposition rate: 1 – 200 nm/min) in structures with

an aspect ratio from 1:1 to 15:1 or more.

In addition, FAST’s versatility makes possible to fill pillars structure of

7:1 aspect ratio without any void.

After her PhD, V. De Jonghe held various positions (process development,

process integration, quality management) within Philips Components

(Display), Philips semiconductors, NXP, Tronics TDK, STMicroelectronics,

e2v-Teledyne, CEA LETI in the field of CMOS, MEMS technology, Photo-

voltaic, and Spatial Imagery.

De Jonghe Veronique

Senior Process Program Manager | Plasma-Therm

23PROGRAM | DECEMBER 3, 2020

PROGRAM

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Thursday, December 3, 2020

09:00 Tutorial Session

09:00 In Situ Metrology for ALD ProcessesMartin Knaut, TU Dresden, Dresden, Germany

09:20 Optimization of Atomic Layer Deposition Processes Using Simulation: an OverviewLinda Jäckel, Fraunhofer ENAS, Chemnitz, Germany

09:40 ALD for Photovoltaic ApplicationsTobias Törndahl, Uppsala University, Uppsala, Sweden

10:00 Break

08:30 – 09:00 Warm-UpNetworking & Tour Market Place

08:40 – 09:00Insights into Production at Trumpf Hüttinger„Production-Tour Video & RF- and MW- Power Generators for PEALD applications”Carsten Winnewisser, Trumpf Hüttinger GmbH + Co. KG, Freiburg, Germany

10:10 – 10:30 Market Place & Meeting Rooms Networking and topical discussion

Market Place Tutorial – Talk | Q & A

24 PROGRAM BOOKLET | ALD FOR INDUSTRY | December 2 – 3, 2020PROGRAM | DECEMBER 3, 2020

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10:30 Elevator Pitch: MKS Instruments Deutschland GmbH, Gencoa Ltd., VAT Deutschland GmbH, Pegasus Chemicals Ltd.

11:00 ALD at CEA-Leti: From Research to ApplicationsRemy Gassilloud, CEA Leti, Grenoble, France

11:20 Innovative ALD Industrial ServicesJoël Matthey, Positive Coating, Law Chaux-de-Fonds, Switzerland

11:40 ALD of Titanium Nitride as Ultra-Thin-Lithium-Ion Diffusion BarrierSascha Böhnhardt, Fraunhofer IPMS CNT, Dresden, Germany

12:00 Break

12:10 – 12:30 Market Place & Meeting RoomsNetworking & topical discussion

Market Place ALD Talk | Q & A


12:30 Direct Atomic Pattern PrintingMaksym Plakhotnyuk, ATLANT 3D Nanosystems, Kgs. Lyngby, Denmark

12:45 Large Area ALD Coatings for Health, Environment and Energy ApplicationsJacques Kools, Encapsulix SAS, Simiane-Collongue, France

13:00 Aspects of ALD Work within the FMD and Potential ExtensionsBernd Hintze, Research Fab Microelectronics Germany (FMD), Dresden, Germany

13:15 In-Situ-Real-Time and Ex-Situ Spectroscopic Analy-sis of Al2O3 Films Prepared by Plasma Enhanced Atomic Layer DepositionPaul Plate, SENTECH Instruments GmbH, Berlin, Germany

13:30 Plasma ALD Processing of GaN Power and RF Devices for High Volume ManufacturingAileen O´Mahony, Oxford Instruments, Bristol, Unit-ed Kingdom

13:45 End of the official program – day 2

All rooms are open also after the event for longer discussions.

25WORKSHOP

• Studies and doctorate at the Technische Universität Dresden

• Scientist at the Institute of Semiconductors and Microsystems,

Technische Universität Dresden since 2007

• Work in the field of atomic layer deposition and thin film metrology

since 2004

• Development and optimization of measurement techniques and

approaches for ALD processes since 2007

• Founding member of the "ALD Lab Saxony"

In situ metrology for ALD processes

Atomic Layer Deposition is a versatile deposition process offering ex-

cellent control over film properties and outstanding reproducibility.

Nevertheless, the development of novel processes needs a detailed

characterization of the interaction between process parameters and

film growth. Further, many ALD processes aren't as simple as the ide-

alized ALD principle promises. Therefore adapted ex situ and in situ

metrology methods are essential to develop, monitor and control ALD

processes. This talk will demonstrate how in situ metrology approach-

es can be used for advanced tool control and detailed process moni-

toring.

Martin Knaut

Group Leader Atomic Layer Processing | Institute of Semiconductors

and Microsystems, Technische Universität Dresden


Optimization of Atomic Layer Deposition Processes Using Simula-tion: an OverviewThis tutorial will give a broad overview of the main simulation

techniques used for investigating atomic layer deposition processes

on various scales - the reactor scale, the feature scale, and the atomic

scale. It will demonstrate the possibilities and benefits of those tech-

niques for ALD equipment manufacturer and users but also address

their limitations. Examples illustrate the discussed simulation techniques.

The focus of this talk will lie on the reactor scale where computational

fluid dynamics (CFD) simulations are used. This method is already

applied for ALD and it is an import tool to develop, investigate, and

optimize ALD processes and ALD equipment. Investigating ALD processes

at the atomic scale using density functional theory (DFT) will also be

addressed more deeply. DFT gives insights into the often unknown

ALD chemistry. Moreover, this talk will look at different particle based

simulation techniques.

Linda Jäckel is a researcher at the Fraunhofer Institute for Electronic

Nano Systems (ENAS) in Chemnitz. She received her B.Sc. and M.Sc. in

mechanical engineering from Technische Universität Bergakademie

Freiberg. Being a trained simulation engineer, she investigates

deposition processes for the semiconductor industry using computational

fluid dynamics simulations. Her research focus lies on reactor scale

simulations for atomic layer deposition and chemical vapor deposition

processes.

Linda Jäckel

Simulation engineer | Fraunhofer ENAS

27WORKSHOP

ALD for photovoltaic applicationsThe interest in using atomic layer deposition (ALD) for photovoltaic

(PV) applications has steadily increased over time, where the self-

terminating surface reactions of ALD lead to good thickness control,

uniformity and conformality of the grown layers. Depending on solar

cell device structure, the ALD layers can be used in different ways such

as electron and hole transport layers, surface passivation and TCO

materials. The most mature example of ALD for PV today is the use of

alumina layers for surface passivation in full-scale industrial produc-

tion of silicon solar cell modules.

For thin film solar cell devices, the growth control of ALD is very

important together with the relatively soft properties of thermal

low temperature ALD processes. One example is for metal halide

perovskite solar cells that have recently shown a major increase in

device efficiency. This can lead to low cost PV modules as well as

cost effective tandem structures.

Tobias Törndahl received his PhD degree in Inorganic chemistry in

2004 at Uppsala University on the topic of ALD of copper compounds

and copper metal. Since 2005, he has been active in the area of

thin film solar cells at the Division of Solar Cell Technology, Uppsala

University. The main part of the research aims at controlling material

properties of ALD and CVD layers and their respective interfaces in

several thin film solar cell device structures.

Tobias Törndahl

Assoc. Prof. | Uppsala University


ALD at Leti: from research to industry

Leti started to work on atomic layer deposition in 1998 with the

deposition of thin 2nm-HfO2 on large 200mm silicon substrates for

FEOL applications. Since that period, ALD never stop to grow in Leti

clean-rooms. In this presentation, we will show how, where and why

ALD became critical in certain applications. We will started to present

early activity at Leti on HfO2, followed by the development of other

dielectrics and metals such as Ta2O5, or TaCN using plasma enhanced

ALD. Then, we will show advanced processes where ALD is well adapted

such in the control of vanadium dioxide stoichiometry. We will also

give some examples of selective ALD deposition. Finally, we will present

very advanced works on 2D metal dichalcogenides (TMD) materials,

trying to explain why ALD is one of the most suitable solution to deposit

atomic thin TMDs on large area.

Dr. Rémy Gassilloud received a M. S. degree in condensed matter from

Univ. Lyon and a M. S. degree in mechanics from Ecole Centrale de Lyon,

France. Then, he obtained his PhD graduation from the Univ. Erlangen,

Germany in 2005. In 2005, he joined the Front-end group at CEA-LETI

and worked on gate development for CMOS FDSOI and Resistive Mem-

ory OxRAM. Since 2015, he is involved in 2D TMD growth at Leti by

Atomic Layer Deposition. He is member and organiser of the French

ALD network RAFALD.org.

Rémy Gassilloud

Researcher | CEA-Leti

29WORKSHOP

INNOVATIVE ALD INDUSTRIAL SERVICES

Positive Coating provides thin-films coating services based on magne-

tron sputtering and atomic layer deposition technologies. Combining

the benefits of both processes, the company is mainly active in the

luxury sector. Positive Coating is the pioneer that has brought ALD within

the Swiss watchmaking industry as early as 2014. Heading now for

diversification, Positive Coating makes its knowledge and expertise

available to other industrial applications. Based on innovation and

quality, it stands as a partner to develop custom-made activities

related to surface engineering. New challenging applications in the

medical field will be addressed. In the presentation, two patented

processes will be discussed. Firstly, a unique method to produce

two-tone components without organic masking. Secondly, a ultra-

white coating that combines electroplating and ALD technologies.

Finally, commercial applications and examples will be presented.

Bachelor of Micro-technologies Engineering (1998).

Since 1999, I have been active in decorative PVD thin films for the

watchmaking industry. In 2004, I joined the Positive Coating SA team.

Since 2011, I have been in charge of implementing ALD technology

within Positive Coating SA activities. Since 2003, I have been lecturing

surface engineering courses at the Haute Ecole Arc Ingénierie

(Switzerland).

Joël Matthey

R&D Project Manager | Positive Coating SA


ALD of Titanium Nitride as ultra-thin Lithium-Ion Diffusion Barrier

Upcoming autonomous microelectronic devices for the Internet- of-

Things require ultralow power consumption enabling on-chip energy

storage. Integrated 3D thin-film batteries (TFB) are a promising solu-

tion to meet these demands. But the diffusion of Li-ions into the Si

substrate would damage surrounding components, detach the battery,

and lead to loss of battery capacity.

Titanium nitride (TiN) is an excellent Li-ion diffusion barrier and cur-

rent collector. Thin films manufactured by plasma-enhanced atomic

layer deposition (PE-ALD) show superior blocking properties compared

to sputtered layers. However, the employed remote plasma ALD was

challenging for a conformal coating of structured substrates.

Hence the aim of this work was to produce and to compare Titanium

nitride thin films deposited by thermal ALD-TiN with the PE-ALD layers.

The results show, that under the right conditions, the properties of

the thermal layers can even excel the PE-ALD layers at even lower film

thickness.

With a masters degree in electrical engineering Sascha Bönhardt is

currently working as a scientist in the field of low power electronics

at the Institute for Photonic Microsystems (IPMS) in Dresden. Dedicat-

ed to analysis, design and improvement of ALD and Plasma-ALD reac-

tors during and after is studies at TU-Dresden, ALD and thin films still

play a vital role in his daily work. Right now he's focused on the de-

velopment of Lithium-ion based ALD thin film batteries, as well as

analogue and mixed signal design for sensors and energy conversion.

Sascha Bönhardt

Scientist | Fraunhofer Society

31WORKSHOP

Direct atomic pattern printing

Recently maskless lithography and selective are atomic layer deposition

techniques attracted huge interest in scientific and industrial commu-

nities due to a possibility to simplify patterning of layers required to

design and fabricate micro and nanodevices. However, each of these

techniques still use the existing lithography based approach based on

layer by layer complex processing involving multiple techniques.

Our company developed a novel method and technology for direct

atomically precise micro-patterning with lateral resolution of 90 mi-

crometers and possibility to print first oxides materials, but also any

other materials available for ALD processes.

We have successfully demonstrated the first printed simple geometries

with several oxide materials. Our goal is to test this technology with

industrial partners and our mission is to enable simplified atomic

precision micropatterning with multiple materials leading to rapid

microprototyping and innovation.

Dr. Maksym Plakhotnyuk is an entreprenuer and scientist with a passion

in nanotechnology particular ALD. He found the company, ATLANT 3D

Nanosystems, together with Ivan Kundrata and Prof. Julien Bachmann

in 2018 to bring the new atomic printing technology of micro and

nanodevices. He previously worked as a postdoc at the DTU (DK)

where he also defended his PhD in Nanotechnology. Prior he received

MSc in Nanotechnology from University of Illinois (US) and MSc and

BSc in Microelectronics from the VNTU (UA).

Maksym Plakhotnyuk

CEO | ATLANT 3D Nanosystems


Large Area ALD Coatings for Health, Environment and Energy Applications

In this talk, we will review some application of ALD coatings on large

surfaces for different applications with strong societal impact.

Two main categories will be treated are:

1) Encapsulation layers which allow to increase the lifetime of a variety

of electronic components, by reducing corrosion.

2) Photocatalytic layers which allow to reduce the spread of infectious

diseases by accelerating the neutralization of microbiological objects

(i.e. virus, bacteria and fungi) onto surfaces.

We will discuss how the unique features of the ALD method allows to

create coatings with the highest level of performance.

I have 35 years of experience in R & D related to thin film deposition

and etching. I started my career at Philips Research Labs in the

Eindhoven, The Netherlands. I then spend about 8 years in the capital

equipment industry in Silicon Valley (CVC and Veeco) . Since 2005,

I am based in the South of France on an entrepreneurial path.

I founded Encapsulix in 2011.

Jacques Kools

CEO & Founder | Encapsulix SAS

33WORKSHOP

Aspects of ALD work within the FMD and potential extensions

In the talk an overview about the ALD landscape in the Research

Fab Microelectronics Germany (FMD) is given. Ideas to extend our

cooperational approach in Germany will be shown. We also discuss

some aspects of our international cooperation in Europe.

• active coordination of science and technology development

in Germany and in Europe,

• in depth knowledge in process integration BEOL (Cu metallization),

• in depth knowledge of PVD/CVD/ALD processes in micro and nano

electronics, as well as solar applications in the fields of research

and development and in production environments,

• Knowledge in production planning,

• Lead of several public funded projects in Saxony,

• Project management.

Bernd Hintze

Technology Park Manager Si based Technologies

Research Fab Microelectronics Germany (FMD)


In-situ real-time and ex-situ spectroscopic analysis of Al2O3 films prepared by plasma enhanced atomic layer deposition.

The SENTECH Real-Time-Monitor (RTM) with its very high time resolu-

tion is well suited for the in-operando investigation of atomic layer

deposition (ALD) processes. In the present work RTM was used to

monitor the inductively coupled plasma-enhanced (ICPE) ALD process

of Al2O3 thin films. Thereby each step of the ALD process was precisely

resolved with 24 ms time resolution. In combination with ex-situ

ellipsometry and X-ray photoelectron spectroscopy, the influences of

plasma power, plasma pulse duration, and deposition temperature on

the film quality were investigated. Al2O3 films deposited by thermal

ALD (T-ALD) utilizing the same reactor were used as a benchmark.

The optical properties of ICPEALD deposited Al2O3 films are comparable

with those of T-ALD films. However, depending on the used plasma

pulse duration and power, additional adsorption processes are ob-

served. The RTM was used to identify and minimize this unintentional

adsorption, resulting in high quality Al2O3 films.

Dr. Paul Plate received his PhD in chemistry from the Technical Univer-

sity Berlin. During his Phd he worked at the Institute for Solar Fuels

located at the Helmholtz-Zentrum Berlin developing ALD processes

for transition metal oxides. After his Phd he joined the ALD group of

SENTECH Instruments working as ALD process engineer. At SENTECH he

is working on new ALD processes and the hardware of SENTECH ALD

equipment.

Paul Plate

ALD Engineer | SENTECH Instruments GmbH

35WORKSHOP

Plasma ALD Processing of GaN Power and RF Devices for High Volume Manufacturing

Low damage, remote plasma enhanced atomic layer deposition (PEALD)

is a key enabling technology for high volume manufacturing of efficient,

high performance GaN devices. These GaN devices facilitate the next

generation of power electronics and RF applications such as 5G networks,

electric vehicles and renewable energy conversion. Device data will

be presented to demonstrate how low damage remote PEALD enables

improved performance for GaN devices through surface engineering

of the GaN substrate using plasma prior to deposition of a high-quality

dielectric layer. Atomfab is optimised as the high volume manufacturing

PEALD solution for low damage plasma processing of GaN devices while

achieving high throughput, low CoO, and device reliability.

Aileen O’Mahony is an Atomic Scale Processing Product Manager at

Oxford Instruments Plasma Technology. Aileen has a PhD in Chemistry

from University College Cork, Ireland, in the field of Atomic Layer

Deposition (ALD) for microelectronics applications. Aileen has worked in

the US and UK on industry-driven process development for the com-

mercialisation of ALD-functionalised products and is now focused on

advancing Atomic Scale Processing product solutions at Oxford Instru-

ments. She is the author and co-author of over 20 publications, and

has presented at numerous international conferences and workshops.

Aileen O'Mahony

Product Manager | Oxford Instruments Plasma Technology

36 PROGRAM BOOKLET | ALD FOR INDUSTRY | December 2 – 3, 2020

INDUSTRIAL EXHIBITIONPlatinum Sponsors:

Gold Sponsors:

Additional Sponsors:

Picosun Groupwww.picosun.com

Listwww.list.lu

VATwww.vatvalve.com

STREMwww.strem.com

Euriswww.euris-semiconductor.com

SENTECH GmbHwww.sentech.de

Genocawww.genoca.com

Veeco Instruments GmbHwww.veeco.com

CS Clean Solutions AGwww.csclean.com

EpiValence Limitedwww.epivalence.com

Pegasus Chemicals Limited www.pegasuschemicals.com

iCAM Engineering Limitedwww.icamengineering.co.uk

MKS Instruments Deutschland GmbH | www.mksinst.com

Muegge GmbH www.muegge.de

Plasma-Therm www.plasmatherm.com

Beneq www.beneq.com

TRUMPF Hüttinger GmbH + Co. KG www.trumpf-huettinger.com

37SPONSORS

Picosun is the leading AGILE ALD® (Atomic Layer Depo-sition) technology provider for microelectronics and other industries.

PICOSUN® product portfolio ranges from fully automat-ed, SEMI compatible 300 mm industrial ALD systems to smaller scale research and pre-pilot tools, with special dedication to cost-efficient, turn-key production solutions for up to 200 mm wafer markets and 3D component pro-cessing.

Picosun offers you the best-in-class thin film technology for conventional IC, compound and power semiconduc-tors, LEDs, MEMS, sensors, and 3D components such as medical devices and implants, PCBAs, machinery parts, watch parts, coins and jewelry.

Picosun coating solutions combine the leading process quality, agile and innovative equipment design, and the most comprehensive after-sales support and services.

For companies driven by

innovation

www.picosun.com

38 PROGRAM BOOKLET | ALD FOR INDUSTRY | December 2-3, 2020SPONSORS

Optix is a robust multi-purpose instrument for gas sensing in any vacuum environment.

Functioning through an operating pressure range of 10-6mbar up to 1mbar, Optix caters for most industrial vacuum production processes without any requirement for differential pumping.

Less sensitive to contamination than RGA's, Optix is ideally suited to processes with a high volume of organics such as ALD.

For further information contact [email protected] or visit www.gencoa.com/optix

CLEANSORB® EXHAUST GAS ABATEMENT

www.csclean.com

FOR R&D AND MANUFACTURING CVD, ALD, Plasma Etch, Ion Implantat ion and many more process appl icat ions

Safe, dry chemical conversion of hazardous gases to stable solidsProprietary CLEANSORB® mediaNo handling of toxic wastePractically maintenance-freeLocal Refill service worldwide

CS Cleansysten/EFDS 0118.indd 1 17.01.18 11:18

39SPONSORS

Chemical Manufacturer for ElectronicsWith more than 40 years of experience in the chemicals sector, EpiValence is positioned to develop, manufacture

and supply innovative precursors that enable our customer’s process innovations to be realised.

[email protected] • +44(0) 1642 924 904www.epivalence.com

Technical Support

Supply Chain ExpertsGlobal Distribution

UKAS AccreditedProduct Development

ALD/CVD Precursors


YOUR PARTNER FOR INDUSTRIAL MICROWAVE- AND PLASMA-SYSTEMSMUEGGE technology is the solution for all microwave assisted applications from industrial heating to large area deposition on a global scale. Together with our American branch, Gerling Applied Engineering, Inc., we develop and continuously improve new processes and applications for almost all markets and industries.

PLASMA ALDPlasma assisted ALD enables low temperature deposition without compromising the film quality for a wide range of precursors. MUEGGE’s proprietary microwave assisted plasma source is key to generate these precursors at high density to deposit ALD layers at highest quality.

Let’s bring Power to your Projects.

→ WWW.MUEGGE.DE

Addressing the demands of Atomic Layer Deposition—today and into the future—with critical technologies that enhance uptime, optimize yield and throughput, and improve productivity.

Visit MKS at ALD FOR INDUSTRYDecember 2-3, 2020

For more information about our ALD solutions, visit www.mksinst.com or call +49 (0)89 4200080.

• Improve precursor reactivity• Generate contamination-free layers• Create highly uniform thin films• Increase thin film reproductivity

Critical Technology Solutionsfor Atomic Layer Deposition

Remote Plasma SourceOzone Gas Generator

RF Plasma Generator Pressure Transducer

41SPONSORS

EURIS Products and ServicesAccelerate your innovationswww.euris-semiconductor.com

Worldwide many Universities, Research Institutes, and Manufacturing companies work verysatisfactorily with Arradiance GEMStar Systems. The GEMStar product line is a precise andreliable desktop size ALD platform, from just a thermal system with 4 precursors up to acomplete PEALD system with 8 precursors and 4 plasma gases. Arradiance also offersintelligent solutions for particle coating and has a lot of experience in the field of energyresearch, like Perovskite solar cells, catalysts-development, and battery research. Euris takescare of all technical support in Europe, like installation and field service.

Euris GmbHWaldmeisterstrasse 7280935 München

Molecular Innovation TMEnabling Technologies for our

World and Beyond

High Quality and Cost-Effective ALD Systems for R&D and

production

Tel.: +49 89 [email protected]

www.euris-semiconductor.com

Pegasus ChemicalsChemical Precursors for ALD and CVD

High purity, specialist packaged chemistry for Atomic Layer Deposition (ALD) and Chemical Vapour Deposition (CVD).

Chemical precursors from small scale (R & D) to high volume manufacture, packaged for individual applications.

Chemical Precursor

Design Development Manufacture Analysis- Precursor design for targeted ALD and CVD applications- In house proprietary analytical methods- Transfill and refill of high purity chemistry in Pegasus or customer owned containers- Customer owned containers collected, cleaned and prepared prior to refill- Delivery package design to optimise chemical delivery- Integrated technical support- Global supply of the most advanced metalorganic chemistry

Specialist Chemistry to Support InnovationFor all enquiries, please contact:[email protected] www.pegasuschemicals.comPegasus Chemicals Limited +44 (0) 1244 521869an ISO9001:2015 registered company


Plasma-Therm KOBUS half pg Ad.indd 1Plasma-Therm KOBUS half pg Ad.indd 1 2/3/2020 3:53:32 PM2/3/2020 3:53:32 PM

RELIABLE UNDER ALL CONDITIONS.Heading into the unknown to open new horizons demands reliable tools. Help turn your resarch goals into reality.

Vacuum valve solutions and bellows from VAT provide unfailing reliability and enhanced process safety – under all conditions.

www.vatvalve.com

43SPONSORS

PEALD and process monitoring from SENTECH Instruments

✓ Real time monitoring of ALD process

with 24 ms resolution

✓ Spectroscopic in situ-ellipsometer

✓ PEALD systems for optical applications

✓ Combining ALD and PECVD

For further information please contact: www.sentech-sales.de or [email protected]

SENTECH GmbH Konrad-Zuse-Bogen 13, 82152 Krailling, Germany Phone: +49 89 897 9607-0

45SPONSORS

LIST Materials

Functionalcoatings

Fibres/matricesadhesion

Structures &multifunctional

composites

Photocatalysis& energy

harvesters

Bio-basedpolymers &composites

Advancedmanufacturing

Smartnanocomposites

Sensors & actuators

TRUMPF Hütt inger – generat ing plasma excitat ion.

There might be one strongerplasma energy source …

... but certainly not one that is as precise. TRUMPF Hüttinger generators can be accurately regulated. And therefore offer ideal solutions

for plasma excitation in industry and research. Whether for the production of semiconductors, fl at panel displays or solar cells. TRUMPF

Hüttinger’s generators impress through reliable technology and excellent availability – with simple system integration. High process

stability and rapid-reaction arc management – for optimum process results. www.trumpf-huettinger.com

46 PROGRAM BOOKLET | ALD FOR INDUSTRY | December 2 – 3, 2020LIST OF ATTENDEES

LIST OF ATTENDEESas at

November 24, 2020

Firstname Name Company City Country

Noureddine Adjeroud Luxembourg Institute of Science and Technology (LIST)

Esch-Alzette Luxembourg

Wojciech Andrysiewicz Centrum Bada i Rozwoju Technologii dla Przemysłu S.A.

Kraków Poland

Gilbert Anzer Anzer Friedrichshafen Germany

Yameng Bao Aalto University Espoo Finland

Henry Bernhardt Infineon Technologies Dresden GmbH & Co. KG

Dresden Germany

Nicolas Blasco Air Liquide Advanced Materials Paris France

Sascha Bönhardt Fraunhofer-Institut für Photonische Mikrosysteme IPMS CNT

Dresden Germany

Jan Borck VAT Deutschland GmbH Dresden Germany

Nils Boysen Ruhr-Universität Bochum Bochum Germany

Ronan Connell iCAM Engineering Limited Connahs Quay United Kingdom

Hywel Davies EpiValence Ltd Cleveland United Kingdom

Veronique de Jonghe Plasma-Therm St. Petersburg, FL

USA

Natalie Delattre THERMOCOAX Suresnes France

Quentin Demarly Air Liquide Advanced Materials Paris France

Alexandra Dobrowolski Luxembourg Institute of Science and Technology (LIST)

Esch-Alzette Luxembourg

Frank Eisenkrämer Leica Microsystems CMS GmbH Wetzlar Germany

Katrin Ferse Europäische Forschungsgesellschaft Dünne Schichten e.V.

Dresden Germany

Bernd Franz MKS Instruments Deutschland GmbH München Germany

Mathias Franz Fraunhofer-Institut für Elektronische Nanosysteme ENAS

Chemnitz Germany

Wojciech Gajewski TRUMPF Huettinger Sp. z o.o. Zielonka Poland

Remy Gassilloud CEA Leti Grenoble France

Jonas Geßler Veeco GmbH Aschheim Germany

Joos Hanssen Euris GmbH München Germany

Jochen Held Huber + Suhner AG Herisau Switzerland

Christina Hildebrandt Fraunhofer-Institut für Solare Energiesysteme ISE

Freiburg Germany

47LIST OF ATTENDEES


Bernd Hintze Research Fab Microelectronics Germany FMD

Dresden Germany

Viviane Hoffmann MKS Instruments Deutschland GmbH München Germany

Jens Hofmann MUEGGE GmbH Reichelsheim Germany

Christoph Hossbach Picosun Europe GmbH Dresden Germany

Ann Hughes Pegasus Chemicals Limited Flintshire United Kingdom

Nikolas Hunzinger TRUMPF Hüttinger GmbH + Co. KG Freiburg Germany

Dirk Isfort Carl Zeiss Jena GmbH Oberkochen Germany

Linda Jäckel Fraunhofer-Institut für Elektronische Nanosysteme ENAS

Chemnitz Germany

Mia Jokiluhta Beneq Oy Espoo Finland

Margrit Kaiser SENTECH Gesellschaft für Sensortechnik mbH

Krailling Germany

Guram Khelashvili STREM Chemicals Inc. Bischheim France

Marcus Klein SENTECH Instruments GmbH Berlin Germany

Hannes Klumbies FHR Anlagenbau GmbH Ottendorf- Okrilla

Germany

Martin Knaut Technische Universität Dresden Dresden Germany

Leif Kochanneck Laser Zentrum Hannover e.V. (LZH) Hannover Germany

Grit Köckritz Europäische Forschungsgesellschaft Dünne Schichten e.V.

Dresden Germany

Jacques Kools Encapsulix S.A. Simiane- Collongue

France

Grit Kotschenreuther Europäische Forschungsgesellschaft Dünne Schichten e.V.

Dresden Germany

Lars Lietzau Merck KGaA Darmstadt Germany

Lie Luo Beneq Oy Espoo Finland

Olivier Marchand Cleanpart Seyssinet Pariset

France

Joël Matthey Positive Coating SA La Chaux-de-Fonds

Switzerland

Lukas Mayr BASF SE Ludwigshafen Germany

Florian Meyer Gencoa LTD Liverpool, L24 9HP

United Kingdom

Bruno Michel MKS Instruments Deutschland GmbH München Germany

48 PROGRAM BOOKLET | ALD FOR INDUSTRY | December 2 – 3, 2020LIST OF ATTENDEES


Simon Naef VAT Vakuumventile AG Haag Switzerland

Jörg Neidhardt VON ARDENNE GmbH Dresden Germany

Kalle Niiranen Beneq Oy Espoo Finland

Aileen O'Mahony Oxford Instruments Plasma Technology Bristol United Kingdom

Andreas Panckow Europäische Forschungsgesellschaft Dünne Schichten e.V.

Dresden Germany

Jörg Patscheider Evatec AG Trübbach Switzerland

Henrik Pedersen Linköping University Linköping Sweden

Yannick Pilloux Plasma-Therm St. Petersburg, FL

USA

Maksym Plakhotnyuk ATLANT 3D Nanosystems Kongens Lyngby

Denmark

Paul Plate SENTECH Instruments GmbH Berlin Germany

Marco Radehaus Fraunhofer IKTS Dresden Germany

Christian Schlößmann MUEGGE GmbH Reichelsheim Germany

Frank Schmidt SENTECH Instruments GmbH Berlin Germany

Marcus Schüler FHR Anlagenbau GmbH Ottendorf- Okrilla

Germany

Sankaran Sivaramakrishnan Picosun Europe GmbH Dresden Germany

Ganesh Sundaram Veeco Waltham, MA USA

Jonas Sundqvist BALD Engineering AB Värmdö Sweden

Dmitry Suyatin Lund University LUND Sweden

Tobias Törndahl University Uppsala Uppsala Sweden

Andreas Wilk Umicore AG & Co. KG Hanau- Wolfgang

Germany

Carsten Winnewisser TRUMPF Hüttinger GmbH + Co. KG Freiburg Germany

Liao Zhongquan Fraunhofer Institute for Ceramic Technologies and Systems IKTS

Dresden Germany

Fadi Zoubian SAIREM Dècines CEDEX France

49

EFDS-MEMBERSHIP

About us

• EFDS-Team

(Managing Director + 4 staff members)

• EFDS - Executive Board

(10 honorary members from industry & research)

• EFDS - Advisory Board

(16 honorary members from industry & research)

• around 200 members from industry and research

Your benefit as EFDS member

• active and established network

• participation in 4 Technical Committee

• cooperation and participation in Workshops, Tutorials,

Conventions and Conferences

• access to the network PLASMA GERMANY and contact to

10 additional associated networks

• exclusive events for EFDS members only

• training possibilities

• various possibilities to present your Company or Institute

• participation in accompanying committees in projects

of the Industrial Collective Research

f. l. t. r.

Dr. Andreas Panckow Network Manager

Grit Kotschenreuther Project Assistent

Grit Köckritz Managing Director

Dr. Katrin Ferse Network Manager

Linda Kappler Innovation Manager


INDUSTRIAL COLLECTIVE RESEARCH

EFDS is member of the AiF – German Federation of Industrial Research

Associations and initiates projects for the “Industrial Collective Research”

Program funded by the Federal Ministry of Economic Affairs and Energy.

We organize the exchange of experiences between research and economy

to solve shared problems through shared projects. This pre-competitive

research is aimed to open up modern surface technologies.

Become a member and use the strength of our network.

CORNET Projects are the international variant of the Industrial Collec-

tive Research Program. It is a network of ministries and funding

agencies that combine their existing funding schemes to increase the

competitiveness of SMEs. In this way, CORNET supports funding organ-

isations worldwide to introduce pilot actions and schemes for

pre-competitive Collective Research.

Participation in a CORNET project allows SMEs, SME associations or

groups and research organisations to build an international network

and benefit from know-how and resources that might not be availa-

ble in their own country or region. Currently 13 countries and regions

participate in this funding program.

Cornet Partner Countries: Austria, Belgium Flanders, Belgium Wallonia, Brazil, Canada, Czech Republic, Germany, Japan, Netherlands, Peru,

Poland, Switzerland, Turkey

© c

hom

bos

an /

fot

olia

If you are interested in participation, please contact us.Grit Köckritz | phone +49 351 871 8375

We gladly give you advice.

51

PARTICIPATE IN OUR 4 TECHNICAL COMMITTEES

FABMBeschichtungen für die Bio- und MedizintechnikLeiter: Marian Böhling, FHR Anlagentechnik GmbHNächste Sitzung: 29.04.2021, Greifswald

FAFKFunktionalisierung von KunststoffenLeiter: Michael Fliedner, COTEC GmbHNächste Sitzung: 29.04.2021, Greifswald

FABFBeschichtungstechnologien für optische und elektronische FunktionalisierungLeiterin: Dr. Grit Hüttl, GfE Fremat GmbHNächste Sitzung: 20.04.2021, Berlin

FATSTribologische SchichtenLeiter: Andrè Hieke, IHI Ionbond AG NetherlandsNächste Sitzung: 23.06.2021, Bingen

• information to recent projects of the Industrial Collective Reserach

• active contribution to projects

• regular exchange and training possibilities

• company tours

• embossment of your image and your expertise

• contribution to the topical focus of EFDS events

• Our expert committee meet twice a year at changing places

Your benefit as member of the technical committee

Do you have questions? Please contact us:

Grit Köckritz phone +49 351 871 8375

We gladly give you advice.


NEXT EFDS-EVENTS

Aufbauseminar: Grundlagen der Plasmatechnik19. Januar 2021 | Fraunhofer- Institut für Organische Elektronik,

Elektronenstrahl- und Plasmatechnik FEP, Dresden

Workshop: Sensorik für autonome Systeme24. Februar 2021 | Hotel an der Oper, Chemnitz

PLASMA GERMANY: Frühjahrssitzung PLASMA GERMANY2. – 3. März 2021 | Universelle Werke - TechnologieZentrum, Dresden

Fachausschuss FABF: Beschichtungstechnologien für optischeund elektronische Funktionalisierungen20. April 2021 | SENTECH Instruments GmbH, Berlin

FachausschussFABM: Oberflächen und Beschichtungen in der Bio- und MedizintechnikFAFK: Funktionalisierung von Kunststoffen29. April 2021 | Leibniz-Institut für Plasmaforschung und Technologie

INP, Greifswald

Workshop: Wasserstofftechnologien8. Juni 2021

Workshop: Oberflächenmodifikation und Endbearbeitung additiv gefertigter Bauteile – SurfAM315. – 16. Juni 2021 | Fraunhofer-Institut für Werkstoff- und

Strahltechnik IWS, Dresden

Fachausschuss FATS: Tribologische Schichten23. Juni 2021 | Oerlikon Balzers Coating Germany GmbH, Bingen

Tagung & Industrieausstellung: V2021 – Vakuum & Plasma12. – 14. Oktober 2021 I Internationales Congress Center, Dresden

ALD for Industry1. – 2. Dezember 2021| Dresden

01 | 2021

04 | 2021

06 | 2021

10 | 2021

12 | 2021

02 | 2021

03 | 2021

Weitere Informationen sowie die Online-Anmeldung finden Sie unter: www.efds.org.

V2021VAKUUM & PLASMAINTERNATIONALES CONGRESS CENTER DRESDEN

12. BIS 14. OKTOBER 2021

www.efds.org/v2021

Aussteller-Anmeldunggeöffnet

2021

Dünne Schichten und Oberflächen fürEnergie · Bio & Medizin · Optik · Werkzeuge & Bauteile

Zusatzworkshop »Vom Messwert zum digitalen Zwilling« und V-Workshop »Oberflächentechnik in der Praxis«

54 PROGRAM BOOKLET | ALD FOR INDUSTRY | December 2 – 3, 2020TEXT

Europäische Forschungsgesellschaft Dünne Schichten e. V.

European Society of Thin Films

Gostritzer Straße 63, 01217 Dresden, Germany

Tel.: +49 351 8718370

Fax: +49 351 8718431

[email protected]

www.efds.org

KOMPETENZ FÜR FORSCHUNG UNDWIRTSCHAFT

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Program CommitteePREFACEPROGRAM Wednesday, December 2, 2020Jonas SundqvistDmitry SuyatinNils BoysenHenrik PedersenNicolas BlascoChristoph HossbachGanesh SundaramKalle NiiranenDe Jonghe VeroniquePROGRAM Thursday, December 3, 2020Martin Knaut Linda JäckelTobias TörndahlRémy GassilloudJoël MattheySascha BönhardtMaksym PlakhotnyukJacques KoolsBernd HintzePaul PlateAileen O'MahonyIndustrial ExhibitionList of AttendeesEFDS-Membership Industrial Collective ResearchParticipate in our 4 Technical CommitteesNext EFDS-Events

Documents

ALD FOR INDUSTRY · 2020. 12. 1. · Adeka : ALD Precursor Developments for Mass Production of Future Semiconductor Devices, Akihiro Nishida ASM International: Materials Evolution