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A Non-Coherent Multi-Band IR-UWB HDR Transceiver based on Energy Detection Mohamad Mroué , Sylvain Haese , Ghaïs El- Zein , Stéphane Mallegol and Stéphane Paquelet 17th IEEE International Conference on Electronics, Circuits and Systems December 15 th , 2010 Athens, Greece. - PowerPoint PPT Presentation
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A Non-Coherent Multi-Band IR-UWB A Non-Coherent Multi-Band IR-UWB HDR Transceiver based on Energy HDR Transceiver based on Energy
DetectionDetection
Mohamad MrouéMohamad Mroué,, Sylvain Haese, Ghaïs El-Zein, Sylvain Haese, Ghaïs El-Zein,
Stéphane Mallegol and Stéphane PaqueletStéphane Mallegol and Stéphane Paquelet
17th IEEE International Conference on Electronics, Circuits and Systems
December 15th, 2010
Athens, Greece
Mohamad Mroué 17th IEEE ICECS 2010 December 15th, 2010 2
Presentation progressPresentation progress
1.1. MB IR-UWB Transceiver for HDR Applications MB IR-UWB Transceiver for HDR Applications (Modulation Principles and Architecture)(Modulation Principles and Architecture)
2.2. Analog CMOS Pulse Energy Detector Analog CMOS Pulse Energy Detector (Architecture (Architecture and Performance)and Performance)
3.3. Conclusion and ProspectsConclusion and Prospects
Mohamad Mroué 17th IEEE ICECS 2010 December 15th, 2010 3
Presentation progressPresentation progress
1.1. MB IR-UWB Transceiver for HDR Applications MB IR-UWB Transceiver for HDR Applications (Modulation Principles and Architecture)(Modulation Principles and Architecture)
2.2. Analog CMOS Pulse Energy Detector Analog CMOS Pulse Energy Detector (Architecture (Architecture and Performance)and Performance)
3.3. Conclusion and ProspectsConclusion and Prospects
Mohamad Mroué 17th IEEE ICECS 2010 December 15th, 2010 4
Impulse radio based solution duplicated on multiple sub-bandsImpulse radio based solution duplicated on multiple sub-bands
• Asynchronous treatment at reception based on energy detection– Amplitude modulation: Amplitude modulation: On-Off KeyingOn-Off Keying (OOK) (OOK)
– Non-coherent demodulation: energetic threshold comparisonNon-coherent demodulation: energetic threshold comparison
• To avoid inter-symbol interference: the pulse repetition period Tr must be greater than the channel delay spread Td
• Extension to multiple bands: to increase the system capacity
… 1 1 0 1 …
1 0 11
… 1 1 0 1 …
Tr
Td
Pulse generator
OOK modulation
Band-pass filter
Pulse detector
ADC
Channel
(S. Paquelet et al., in joint UWBST IWUWBS, 2004)(S. Paquelet et al., in joint UWBST IWUWBS, 2004)
Principles of the proposed system Principles of the proposed system High data rate transmission with impulse radio High data rate transmission with impulse radio ??
Mohamad Mroué 17th IEEE ICECS 2010 December 15th, 2010 5
Transmitter architecture: filter bank implementationTransmitter architecture: filter bank implementation
3.1GHz 10.6GHz
3.1GHz 10.6GHz
1
1
0
0
0
1
Receiver architecture: pulse detector on each sub-bandReceiver architecture: pulse detector on each sub-band
3.1GHz 10.6GHz
3.1GHz 10.6GHz3.1GHz 10.6GHz
1
1
0
0
0
1
3.1GHz 10.6GHz
UWB HDR transceiver architectureUWB HDR transceiver architecture
Measured transmission responses versus frequency for a 3.1-5.2 GHz octoplexer.
(De)multiplexer involved in the MB-(De)multiplexer involved in the MB-OOK UWB transceiverOOK UWB transceiver
– No power division effect In-band insertion loss < 4 dB
– No external bias (Only passive devices)
– Identical (de)multiplexer for Tx and Rx
Advantages of the proposed architecture:Advantages of the proposed architecture:– Relaxed hardware constraints:
• Only coarse synchronization is needed
• Energy based processing
– Flexibility of the multi-band architecture:• Scalable data rate / power control
• Radio resource management
n 16 to 24
Bi 250 to 500 MHz
Ti 10 to 100 ns
Tr > 25 ns
Throughput
(3 meters)
> 600 Mbps
Mohamad Mroué 17th IEEE ICECS 2010 December 15th, 2010 6
UWB HDR transceiver architectureUWB HDR transceiver architecture
Transceiver’s componentsTransceiver’s components– Commercial monocycle pulse generator
• Peak-to-peak amplitude into 50 Ω load: 3.29 V• Duration: 184 ps, center frequency: 5 GHz
– Quadriplexer (3.1-4.2 GHz)• (De)multiplexer only based on filters• Identical (de)multiplexer for Tx and Rx
• No external bias (Only passive devices)
• No power division effect No need of signal
amplification (In-band insertion loss < 3 dB)• Mechanical etching process using low-cost
organic substrate (RO3010)
– Amplification stages• Total amplification level of 42 dB
– UWB antennas
• Conical monopole (Omni-directional)
• Horn antenna (Directional with half power beamwidth > 50° in the 3.1-4.2 GHz) 2.75 3.00 3.25 3.50 3.75 4.00 4.25 4.50 4.752.50 5.00
-70
-60
-50
-40
-30
-20
-10
-80
0
Frequency (GHz)
Tra
nsm
issio
n (
dB
)
Readout
m2
Readout
m1
m1Frequency: 3.16 GHz|S21| = -2.441 dB
m2Frequency: 3.846 GHz|S41| = -2.502 dB
S21 S31 S41 S51
Mohamad Mroué 17th IEEE ICECS 2010 December 15th, 2010 7
Measurement results in LOS and NLOS configurationsMeasurement results in LOS and NLOS configurations
Directional Antennas
Omni-directional Antennas
Configuration
(Tx to Rx)
Omni. to Omni.
Omni. to Direct.
Direct. to Direct.
3-dB Bandwith 250 MHz
Number of sub-bands 24
Range (m) 1 3 1 3 1 3
Average delay spread (ns)
17.2 34.0 9.6 16.8 8.15 11.2
Pulse repetition period (ns)
20 40 10 20 10 15
Data rate (Gbps) 1.2 0.6 2.4 1.2 2.4 1.6
Mohamad Mroué 17th IEEE ICECS 2010 December 15th, 2010 8
Presentation progressPresentation progress
1.1. MB IR-UWB Transceiver for HDR Applications MB IR-UWB Transceiver for HDR Applications (Modulation Principles and Architecture)(Modulation Principles and Architecture)
2.2. Analog CMOS Pulse Energy DetectorAnalog CMOS Pulse Energy Detector (Architecture (Architecture and Performance)and Performance)
3.3. Conclusion and ProspectsConclusion and Prospects
Mohamad Mroué 17th IEEE ICECS 2010 December 15th, 2010 9
Specifications:Specifications:• Operation with large bandwidth (3.1-10.6 GHz)
– Input detector bandwidth ~ 500 MHzInput detector bandwidth ~ 500 MHz
• Low mass fabrication cost
• Low power consumption and low complexity – The circuit must provide the pulse detection on each sub-bandThe circuit must provide the pulse detection on each sub-band
CMOS technology
Implementation study of the detectorImplementation study of the detector
Mohamad Mroué 17th IEEE ICECS 2010 December 15th, 2010 10
Squarer based on two MOSFETs Squarer based on two MOSFETs – When biased with zero drain to source voltage in the triode region
– The circuit is driven by balanced signals
– Output current:
– Condition :• M1 and M2 must perfectly be matched (K, a1, a2)
– Avantages :• Simple design
• No additional power consumption
• Principle can be applied on all CMOS IC technologies
Adopted squarer circuitAdopted squarer circuit
Mohamad Mroué 17th IEEE ICECS 2010 December 15th, 2010 11
IntegratorIntegrator
IntegratorIntegrator– Current to voltage conversion and integration
directly around a capacitor
– Current amplifier: • Low input impedance: square law operation of the first stage
• High output impedance: integration and S/H stage
Mohamad Mroué 17th IEEE ICECS 2010 December 15th, 2010 12
IampIin
Current amplifierCurrent amplifier
– Input bandwidth ~ 500 MHz• Useful part of the squared signal pass to the
integrator unaffected
– Architecture based on current mirrors • Easy to implement
• Reduced complexity
• Low voltage and low power consumption
IntegratorIntegrator
– Output capacitor• Current to voltage conversion
• Signal integration
IntegratorIntegrator
Mohamad Mroué 17th IEEE ICECS 2010 December 15th, 2010 13
Adopted architecture: open loop S/H circuitAdopted architecture: open loop S/H circuit
– Charge injection effects Sampling errors
• Charge injection compensation: – CMOS switchCMOS switch
– Minimum-geometry switches Minimum-geometry switches
– Large capacitorLarge capacitor
– Switch architecture
• Reset switch: low ON resistance rON
– Short discharge time for the hold capacitor Short discharge time for the hold capacitor
• Other switches: minimum (W,L) – reduce the charge injection effectsreduce the charge injection effects
– Output stage
• Unity gain output buffer– High input impedanceHigh input impedance
Sample and hold circuitSample and hold circuit
Mohamad Mroué 17th IEEE ICECS 2010 December 15th, 2010 14
Noise performanceNoise performance– Noise level at the output of the detector
• Included detector parts: squarer, current amplifier, switch (ON state) and the hold capacitor
• Estimated noise level: ~ 1 % of the useful signal level
Imperfection effects studyImperfection effects study– Effect of the input impedance of the current amplifier on the squarer
• Gain variation of the squarer as a function of the input impedance
Effects of the MOS transistors’ parameters variationsEffects of the MOS transistors’ parameters variations– Squarer operation:
• Effect on the gain of this stage
• The square law function of the squarer is not affected
– Current amplifier operation: Current offset and gain
• A modification of the architecture permit to reduce the generated offset current
Circuit performanceCircuit performance
Mohamad Mroué 17th IEEE ICECS 2010 December 15th, 2010 15
Time domain simulationTime domain simulation– Simulator: CADENCE Spectre
– Technology : AMS 0.35 μm BiCMOS
Pulse detector architecturePulse detector architecture
Circuit parameters
Squarer
(W/L)N 40/0.35 VG 1 V
Current amplifier
(W/L)N 7.2/0.35 Bandwidth at 3dB 563 MHz
(W/L)P 70/0.35 VDD = - VSS 1.8 V
Ibias 84.5 μA Power consumption 0.6 mW
Output stage
I0 240 μA Bandwidth at 3dB 825 MHz
VDD = - VSS 1.8 V Power consumption 1.6 mW
Mohamad Mroué 17th IEEE ICECS 2010 December 15th, 2010 16
Pulse Energy Detector with two parallel stages for the integrator and S/H stages. Pulse Energy Detector with two parallel stages for the integrator and S/H stages.
– Time domain simulation• Simulator: CADENCE Spectre
• Technology : AMS 0.35 μm BiCMOS
• Tr = 15 ns, Ti = 13 ns, TReset = 3 ns , Ts = 8 ns
Pulse detector architecturePulse detector architecture
Input pulseIntegrationSamplingReset
1 0 1 1 0 1 Transmitted code:
Mohamad Mroué 17th IEEE ICECS 2010 December 15th, 2010 17
Presentation progressPresentation progress
1.1. MB IR-UWB Transceiver for HDR Applications MB IR-UWB Transceiver for HDR Applications (Modulation Principles and Architecture)(Modulation Principles and Architecture)
2.2. Analog CMOS Pulse Energy Detector Analog CMOS Pulse Energy Detector (Architecture (Architecture and Performance)and Performance)
3.3. Conclusion and ProspectsConclusion and Prospects
Mohamad Mroué 17th IEEE ICECS 2010 December 15th, 2010 18
ConclusionConclusion– Functional tests of the communicating system in real environment
– Comparison between the use of directional and Omni-directional antennas in LOS and NLOS configurations
– Implementation evaluation of the proposed Multi-band IR-UWB system
MB IR-UWB receiver architecture MB IR-UWB receiver architecture
Conclusion and prospectsConclusion and prospects
Base-band: pulse energy detectionPower consumption: ~ 40 mW
Analog Front-End: LNA and VGA with an appropriate technologyPower consumption: ~100 mW
Filter bank: no additional power consumption
LTCC technology(Low Temperature Co-fired Ceramic)
SiP approach (System in Package)
CMOS Technology
Mohamad Mroué 17th IEEE ICECS 2010 December 15th, 2010 19
Thank you for your attention !Thank you for your attention !
Mohamad Mroué 17th IEEE ICECS 2010 December 15th, 2010 20
ITE-UWB HDRITE-UWB HDR Principles Performances: optimal demodulation rule
Energy demodulation problem for OOK (one sub - band)
two symmetric hypothesis
Objective : minimise error probability knowing and after estimating
20 0
21 0
H : [ ( )]
H : [ ( ) ( )]
i
i
T
T
x w t dt
x s t w t dt
2
0, ( ) ,
iT
iT E s t dt NB
0 ( )p y
1( )p yy
Optimal threshold opt
N
1.4
opt LM M L
N
0 1opt optp pN N
L
L
with
Special demodulation threshold
1
2
1
0
1 1
( ) , 0( )
( ) 2 , 0
M
M y
y LM
y ep y y
M
yp y e I yL y
L
2 2 1i
xy NEL N
M BT
Probability densities
où
S. Paquelet, L-M. Aubert et al, UWBST 2004,
« An Impulse Radio Non-coherent Transceiver for High Data Rates »
Mohamad Mroué 17th IEEE ICECS 2010 December 15th, 2010 21
E/N (dB)
Pe
Coherent - RAKE receiver: Energy recovered on few paths
whereas
Quadratic integration: Whole available energy recovered
rake achieves comparable if it collects 33% to 40% of the whole available energy.
Extended Notion of OFDM orthogonal carrier orthogonal pulses intrinsic fading resistance
eP
S. Paquelet, L-M. Aubert et al, UWBST 2004, « An Impulse Radio Non-coherent Transceiver for High Data Rates »
R * 150 240 600 Mbit/sd 10 5 3 mB 500 500 250 MHzNband 12 12 24Tr 80 50 40 ns
CM 4 3 2Ti 50 40 30 ns
Pe * 10-5 10-5 10-5
CM: IEEE Channel Models- 2: NLOS 0-4 meters- 3: NLOS 4-10 meters- 4: Extreme NLOS multipaths
* without FEC
ITE-UWB HDRITE-UWB HDR Principles Performances/Comparisons
Mohamad Mroué 17th IEEE ICECS 2010 December 15th, 2010 22
Mean performance for a given received energy when Mean performance for a given received energy when considering the FCC limitationsconsidering the FCC limitations
Mohamad Mroué 17th IEEE ICECS 2010 December 15th, 2010 23
Quadriplexer (3.1-4.2 GHz)Quadriplexer (3.1-4.2 GHz)
Mechanical etching processMechanical etching process Low cost organic substrate RO3010Low cost organic substrate RO3010
– « Ceramic-filled PTFE composite »
– Dielectric constant : 10.2
– Metallization thickness : 17 µm
ArchitectureArchitecture– 1 Low pass filter
– 4 bandpass filters
• Based on resonators
No power division effectNo power division effect
(S. Mallégol et al., EuRAD&EuMC, 2006)(S. Mallégol et al., EuRAD&EuMC, 2006)
Sub-band (GHz)
Central Frequency (Fc, GHz)
Insertion loss at Fc (dB)
Bandwidth at 3 dB (MHz)
Bandwidth at 10 dB
(MHz)
3.1-3.22 3.151 2.68 185.8 308.4
3.44-3.55 3.495 2.23 199.8 295.3
3.79-3.91 3.834 2.33 196.2 309.4
4.13-4.25 4.193 2.43 193.3 322.2 2.75 3.00 3.25 3.50 3.75 4.00 4.25 4.50 4.752.50 5.00
-70
-60
-50
-40
-30
-20
-10
-80
0
Frequency (GHz)
Tra
nsm
issio
n (
dB
)
Readout
m2
Readout
m1
m1Frequency: 3.16 GHz|S21| = -2.441 dB
m2Frequency: 3.846 GHz|S41| = -2.502 dB
S21 S31 S41 S51
Intercept-point magnitude betweenadjacent sub-bands > 14 dB
Mohamad Mroué 17th IEEE ICECS 2010 December 15th, 2010 24
Octoplexer (3.1-5.1 GHz)Octoplexer (3.1-5.1 GHz)
ANR BILBAO ProjectANR BILBAO Project
Size: 71 mm 62 mm
In
2.75
3.00
3.25
3.50
3.75
4.00
4.25
4.50
4.75
5.00
5.25
5.50
5.75
6.00
6.25
2.50
6.50
-110
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
-120
0
Frequency (GHz)
Tra
nsm
issi
on (
dB)
Readout
m1
Readout
m2
Readout
m3
m1freq=dB(S(1,2))=-2.561
3.180GHzm2freq=dB(S(1,5))=-3.166
4.240GHzm3freq=dB(S(1,9))=-3.078
5.760GHz
(S. Mallégol et al., EuRAD&EuMC, 2006)(S. Mallégol et al., EuRAD&EuMC, 2006)
Mohamad Mroué 17th IEEE ICECS 2010 December 15th, 2010 25
Monocycle-pulse
generator
3.1-5.2 GHz Octoplexer
G0
iT
2(.)
G0
iT
2(.)
3.1-5.2 GHz Octoplexer
3.1-5.2 GHz Octoplexer
Out1
Out8
Measurements results
CADENCE simulation results
Time domain
Frequency domain
1 GHz/div
1 V/div
1 ns/div
Time domain
Frequency domain
1 GHz/div
1 V/div
1 ns/div
Non-filtered monocycle pulse
Into 50 :Vpeak-to-peak = 3.29 VDuration = 184 ps
200 mV/div
2 ns/div
3.1-3.22 GHz filter
3.79-3.91 GHz filter
3.44-3.56 GHz filter
4.13-4.25 GHz filter
200 mV/div
2 ns/div
3.1-3.22 GHz filter
3.79-3.91 GHz filter
3.44-3.56 GHz filter
4.13-4.25 GHz filter
The first 4 pulses at the outputs of the 3.1 – 5.2 GHz octoplexer (Tx)
Spread of the output pulses < 6 ns (< Td)
Measurements and simulation resultsMeasurements and simulation results
LNA
Mohamad Mroué 17th IEEE ICECS 2010 December 15th, 2010 26
Objective: to reduce current offset level generated at the outputObjective: to reduce current offset level generated at the output
– Modifying the architecture of the current amplifier
– Altering the positions of two p-channel and n-channel MOS transistors Compensation of effects of MOS transistors’ parameters variations
The current offset is reduced by 4 to 5 times
Modified current amplifier architectureModified current amplifier architecture
Mohamad Mroué 17th IEEE ICECS 2010 December 15th, 2010 27
Evaluation of the current offset variation generated at the output of the current Evaluation of the current offset variation generated at the output of the current amplifieramplifier
• Variation of the threshold voltage VT and the transconductance factor K
– Comparison between analytical and simulation results
Variation effects of MOS transistors’ Variation effects of MOS transistors’ parametersparameters
Mohamad Mroué 17th IEEE ICECS 2010 December 15th, 2010 28
New Monte-Carlo simulation results using CADENCE with variations on mismatch New Monte-Carlo simulation results using CADENCE with variations on mismatch and both mismatch and process parametersand both mismatch and process parameters
Modified current amplifier architectureModified current amplifier architecture
mismatch mismatch & process