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8 th International Meeting on Front-End Electronics Bergamo 24-27 May 2011 CBC (CMS Binary Chip) Design for Tracker Upgrade Lawrence Jones ASIC Design Group STFC Rutherford Appleton Laboratory 1/27

8 th International Meeting on Front-End Electronics Bergamo 24-27 May 2011

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1/27. 8 th International Meeting on Front-End Electronics Bergamo 24-27 May 2011 CBC (CMS Binary Chip) Design for Tracker Upgrade Lawrence Jones ASIC Design Group STFC Rutherford Appleton Laboratory. 2/27. Overview of Talk Introduction Analogue Design Digital Design Test Results - PowerPoint PPT Presentation

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Page 1: 8 th  International Meeting on Front-End Electronics Bergamo 24-27 May 2011

8th International Meeting on Front-End ElectronicsBergamo 24-27 May 2011

CBC (CMS Binary Chip) Design for Tracker Upgrade

Lawrence Jones

ASIC Design GroupSTFC Rutherford Appleton Laboratory

1/27

Page 2: 8 th  International Meeting on Front-End Electronics Bergamo 24-27 May 2011

2/27

Overview of Talk

Introduction

Analogue Design

Digital Design

Test Results

Conclusion

Acknowledgements

Page 3: 8 th  International Meeting on Front-End Electronics Bergamo 24-27 May 2011

CBC Introduction

- CBC is intended for use in the outer tracker of the SLHC with short strip detectors (2.5-5cm)

- The original LHC readout chip (APV25-S1) had an analogue non-sparsified readout architecture.

- For SLHC, a binary non-sparsified readout has been chosen as the target architecture for the CBC.

- This has the following advantages over a digital sparsified system.

- Simplifies readout architecture, simpler on-chip logic- Occupancy independent data volume- No ADC - Lower power- Can be emulated off-detector- Simpler overall system

- Designed on IBM 130nm CMOS.

3/27

Page 4: 8 th  International Meeting on Front-End Electronics Bergamo 24-27 May 2011

128 Channels - preamp, postamp, comparator

Both polarities of signal- designed for both electrons and holes

Binary Conversion- programmable hysteresis, less than16ns time walk

Pipeline memory 256 deep- 2 port RAM, no SEU immunity

Buffer Memory 32 deep- pipeline address has hamming encoding

Programmable Biases- fully programmable through I2C with 8bit resolution- referenced to bandgap (provided by CERN)

LDO Regulator- stand-alone block, can be used or not

DC-DC Converter- 2.5V to 1.2V, stand alone block

- provided by CERN

I2C Interface SLVS I/O- provided by CERN

4/27

CMS Binary Chip (CBC) Overview

Preamplifier x 128

Pipeline RAM

128x256

Data Buffer 128 x 32

Output Shift

Register

Gain Am

plifier x 128Program

mable O

ffset

Comparator x 128

Programmable Voltage / Current

Bias

Hit D

etect Logic

Programm

able Hysteresis

R/W Pointers

Pointer Sequencing and Readout Logic

I2C Interface

LDO

Address Buffer 8 x 32

DC-

DC

Conv

erte

r

Bandgap

SLVS I/OI2C I/O

2.5v

1MHz

1.2v

PW

R

GN

D

SDAO

SDAI

SCK

DOUT

40Mhz

Trig

1.1v

1.2v

Page 5: 8 th  International Meeting on Front-End Electronics Bergamo 24-27 May 2011

Detector Type: Silicon Strip (both n-on-p and p-on-n)

Signal Polarity: both (electrons and holes)

Strip length: 2.5 – 5 cm

Strip Capacitance: 3 – 6 pF

Coupling: AC or DC

Detector leakage: up to 1 uA leakage current compensation

Noise: less than 1000 electrons rms for sensor capacitance up to 5 pF

Leakage noise: 400 electrons rms for 1uA leakage

Overload recovery: normal response within ~ 2.5 us after 4 pC signal

Power: ~ 500 uW / channel (for 5pF strips)

Operating temp.: In experiment probably < -20C but will want to test at room temp.

Power supply: 1.1 V (assumes front end supplied through LDO to get supply noise rejection)

Gain 50 mV/fC

Dynamic range: respond linearly up to 4fC

Timewalk: less than16 ns for 1.25 fC and 10 fC signals with comp. thresh. set at 1 fC

5/27

Front End Specification

Page 6: 8 th  International Meeting on Front-End Electronics Bergamo 24-27 May 2011

Preamplifier

-100fF feedback capacitor

- Selectable resistive feedback network absorbs leakage current

- 20ns time constant minimises effects of pile up

Comparator

- Global Threshold

- Programmable hysteresis

- Selectable polarity

CBC Front End

Postamplifier

- Designed for both electrons and holes

- Coupling capacitor removes leakage current shift

- Programmable offset for trim

- 8 bits 200mV range

6/27

Page 7: 8 th  International Meeting on Front-End Electronics Bergamo 24-27 May 2011

7/27

Front End Simulations

Postamplifier

Offset adjustable using programmable current through resistor

Preamplifier

Single feedback resistor for electrons

T network for holes to increase headroom with leakage shift

0 uA

10 uA

Ipaos2

Ileak = 0

Ileak = 1uA

All Corners

All Corners1.5fC

-2fC to 8fC in 1 fC steps

Page 8: 8 th  International Meeting on Front-End Electronics Bergamo 24-27 May 2011

Electrons

- Current mirror biases feedback transistor.

- Sources connect to VplusAs signal is negative going

- Current programmable through bias generator

Holes

- Sources of current mirror connect to output since signal is positive going.

- 1pF capacitor ensures gates track output to maintain linearity

v(npa4)v(npa4)

v(npa4)v(npa4)

Post Amplifier

8/27

All Corners2fC steps

All Corners2fC steps

Page 9: 8 th  International Meeting on Front-End Electronics Bergamo 24-27 May 2011

Comparator

Programmable hysteresis:

9/27

Page 10: 8 th  International Meeting on Front-End Electronics Bergamo 24-27 May 2011

.

Mode 1

- A synchronised version of the input is passed through to the output (a).

- If the pulse is too short it may be missed (b)

Mode 0

- The comparator pulses are compressed or stretched to be one clock cycle in length (d,e)

- The output from the Hit detection circuit feeds directly into the pipeline RAM.

Hit Detection Logic

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Page 11: 8 th  International Meeting on Front-End Electronics Bergamo 24-27 May 2011

Pipeline Architecture

11/27

Latency Register- defines separation of pointers- 256 clocks, 6.4us at 40Mhz

Pointer Start Logic- enables the Write/Trigger Counters- latency separation

Write/Trigger Pointers- 8 to 256 decoders

Latency Check- monitors counters- if difference ≠ latency then error

Pipeline/Buffer RAM - dual port- Buffer RAM configured as FIFO

Output Shift Register- 140 to 1 parallel load and shift

Trigger and Readout Control- decodes fast control (trigger input)- controls transfer from pipeline to buffer when triggered- monitors Up/Down Counter to check for data- sequences loading of shift register and shifting of data

Page 12: 8 th  International Meeting on Front-End Electronics Bergamo 24-27 May 2011

Storage nodes p diffusion

Storage nodes n diffusion

Transistors go tri-state if their input is corrupted

SEU tolerant D-type flip-flop

incorruptible 1

incorruptible 0

12/27

Page 13: 8 th  International Meeting on Front-End Electronics Bergamo 24-27 May 2011

SEU tolerant Data Register (I2C)

- Triple RAM Cells with voting circuit

- Used in the I2C registers

- Settable and resettable versions

- Store the chip modes and bias settings

13/27

Page 14: 8 th  International Meeting on Front-End Electronics Bergamo 24-27 May 2011

Present Status

March 2009 – Design Started Process – IBM 130nm CMOSDesigners – Lawrence Jones, STFC Mark Raymond, IC

Various Sub-blocks CERN

July 2010 – Design Submitted

February 2011 – Testing Started

May 2011 – Chip is Fully Functional

14/27

Page 15: 8 th  International Meeting on Front-End Electronics Bergamo 24-27 May 2011

Test ResultsProvided by

Mark Raymond, Imperial College

15/27

Page 16: 8 th  International Meeting on Front-End Electronics Bergamo 24-27 May 2011

CBC Test Results

- One full data frame and the start of a second.

- 1fC of charge injected into one channel via an external capacitor

- Header consists of 2 start bits “11” 2 error bits – latency, full 8 bit pipeline address 128 channel data

- One full data frame showing charge injected through internal capacitors on every 8th channel

- Approximately 1.5fC

16/27

1st Header 2nd Header 128 bit Channel Data

Page 17: 8 th  International Meeting on Front-End Electronics Bergamo 24-27 May 2011

200

150

100

50

0

curr

ent

[uA

]

250200150100500

bias register setting

IPRE1 IPRE2 IPSF IPA IPAOS ICOMP

Bias Generator Measurements

- Register settings swept across the range 0-255 for each bias

- Individual bias currents are measured using bias test pads

- Results are not linear but were not expected to be

- Discontinuity is under investigation but does not affect performance of the chip

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Page 18: 8 th  International Meeting on Front-End Electronics Bergamo 24-27 May 2011

Comparator S-curves

- No direct way of measuring analogue signals from all channels

- Use comparator S-curves

- Sweep threshold across the signal and histogram results

Num

ber

of E

vent

s

S-curve

meansignal

Comparator Threshold

MAX

½ MAX

18/27

Page 19: 8 th  International Meeting on Front-End Electronics Bergamo 24-27 May 2011

19

100

80

60

40

20

0

num

ber

of

even

ts

600500400300200

comparator threshold VCTH [mV]

1 fC

8 fC

600

500

400

300

S-c

urv

e m

id-p

oint

[m

V]

86420

charge injected[fC]

Electrons mode

- Gain ~ 50 mV / fC- Signals in range 1-8 fC in 1 fC steps

100

80

60

40

20

0

num

ber

of

even

ts

900850800750700650

comparator threshold VCTH [mV]

1 fC

8 fC850

800

750

700

650

600S-c

urve

mid

-poi

nt [

mV

]

86420

charge injected[fC]

Gain and Dynamic Range

Holes mode

- Gain ~ 50 mV / fC- Less dynamic range- Linear in region where threshold will be set

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Page 20: 8 th  International Meeting on Front-End Electronics Bergamo 24-27 May 2011

20

- Comparator threshold set globally

- Individual channel tuning achieved by programmable offset on the comparator input signal

- 8-bit precision

- Before Tuning threshold spread is about 30 mV which is < 1 fC

- After Tuning threshold spread is about 1mV which is the resolution of the offset adjust

200

150

100

50

0

num

ber

of e

vent

s channel offsets all=255

channel offsets all = 0

200

150

100

50

0

num

ber

of e

vent

s

780760740720700680660640

comparator threshold VCTH [mV]

channel offsets tuned

Channel Matching

20/27

Page 21: 8 th  International Meeting on Front-End Electronics Bergamo 24-27 May 2011

Noise and Analogue Power

1200

1000

800

600

400

200

0

nois

e [r

ms

elec

tron

s]

121086420

external capacitance [pF]

400

350

300

250

200

150

100

power per channel [uW

]

electrons mode

noisepower

1200

1000

800

600

400

200

0

nois

e [r

ms

elec

tron

s]

121086420

external capacitance [pF]

400

350

300

250

200

150

100

power per channel [uW

]

holes mode

noisepower

• Open circles show simulation results• Dots and crosses show measurements

- The noise and the power consumption depend on the external input capacitance

- For differing input capacitance, the current in the input transistor is adjusted to maintain the pulse shape - so overall analogue power varies

- Measurements made for both electrons and holes

- Power simulation results lower since not all circuitry on the chip was included

- Within target specifications

- Noise target spec. < 1000e for 5 pF sensor

21/27

Page 22: 8 th  International Meeting on Front-End Electronics Bergamo 24-27 May 2011

Digital Power

Simulated- The Digital power Consumption is shown in the table below.- Clock Rate of 40Mhz, Power Supply 1.2V, No SLVS Tx/Rx , I2C- Worst power models used including parasitic RCs

Measured Digital Power Consumption (including SLVS) < 50uW/channel

Trigger Rate

Temp CurrentmA (RMS)

Power(1.2V)mW

Power/ChanneluW

0 -50 3.4 4.1 32

0 +50 3.7 4.4 35

High -50 4.7 5.6 44

High +50 5.1 6.1 48

22/27

Page 23: 8 th  International Meeting on Front-End Electronics Bergamo 24-27 May 2011

CBC Power Consumption

Measured per channel

Analogue 130 + (21 x CSENSOR[pF]) uW

Digital 50uW

Total 180 + (21 x CSENSOR[pF]) uW

5pF Sensor 300uW (Target <500uW)

APV25 ~2.6mW (long strips)

23/27

Page 24: 8 th  International Meeting on Front-End Electronics Bergamo 24-27 May 2011

Other Blocks

DC-DC converter2.5 to 1.2V Provided by CERN ( M.Bochenek et al)Working

Test devicesNot tested

SLVS I/OProvided by CERN(S. Bonacini, K.Kloukinas)working

LDO regulator1.2 to 1.1Vdropout < 40 mV for 60 mA (measured)

BandgapProvided by CERN, working

24/27

Page 25: 8 th  International Meeting on Front-End Electronics Bergamo 24-27 May 2011

CBC prototype working well- Performs within noise and power budget

A lot more testing to do- Powering options including on-chip DC-DC converter and LDO- Temperature- Tests including sensors- Radiation- Test Beam

Future Work- 256 channel chip- Inclusion of on-chip test pulse based on DLL- Strip coincidence logic for providing trigger signal- Bump bonding to eliminate pitch adaptor

Conclusions

25/27

Page 26: 8 th  International Meeting on Front-End Electronics Bergamo 24-27 May 2011

Acknowledgements

26/27

Imperial College

Mark Raymond for his design work on the front end, and all the testing

CERN

Michal Bochenek , Federico Faccio for providing the DC-DC converterSandro Bonacini, Kostas Kloukinas for the SLVS I/OXavi Cudie, Paulo Moreira for the Bandgap circuitKostas again for arranging the IBM MPW

Page 27: 8 th  International Meeting on Front-End Electronics Bergamo 24-27 May 2011

8th International Meeting on Front-End ElectronicsBergamo 24-27 May 2011

Thanks for listening

Lawrence Jones

ASIC Design GroupSTFC Rutherford Appleton Laboratory

[email protected]

27/27

Page 28: 8 th  International Meeting on Front-End Electronics Bergamo 24-27 May 2011

EXTRA

28/32

Page 29: 8 th  International Meeting on Front-End Electronics Bergamo 24-27 May 2011

Digital Current Simulations

- Important to minimise digital power consumption – simulated current in supply- Included in the simulation: Pipeline, Data Buffer, Output Shift Register, Pipeline --- Control, Trigger Decoder and Readout Sequencing Logic, parasitic RCs.- Not Included: I2C interface and registers, SLVS Rx/Tx, DC-DC Converter- Simulated for maximum trigger rate of 13.3MHz and also for no triggers.

+50C

-50C

13.3Mhz

0Mhz

13.3Mhz

0Mhz

5.1mA RMS

3.7mA RMS

4.7mA RMS

3.4mA RMS

29/32

Page 30: 8 th  International Meeting on Front-End Electronics Bergamo 24-27 May 2011

Global comparator threshold (VCTH)

When hits occur on multiple channels get interaction with VCTH through the feedback resistors. Fixed by providing external voltage

Not difficult to fix on next version

Decoupling required

External decoupling is required on several of the biases

Dummy analogue channel

The dummy analogue channel does nor provide a clean signal, there is transient ringing – can be used for DC behaviour

May be an issue with the test board

Known Problems

30/32

Page 31: 8 th  International Meeting on Front-End Electronics Bergamo 24-27 May 2011

currently looking at:

1) bump-bonded version• allows to integrate pitch adaption to sensor on hybrid• hybrid has to be “hi-tech” substrate• fine pitch bonding (C4 ~ 250 m) and tracking• chip layout should proceed in parallel with substrate• things to learn about hybrid technology and impact on chip

CB

CC

BC

CB

CC

BC

CB

CC

BC

CB

CC

BC

bump-bonded CBCwith pitchadaptation

incorporated intohybrid

Future Plans

31/32

Page 32: 8 th  International Meeting on Front-End Electronics Bergamo 24-27 May 2011

Future Plans

32/32

32

2) 256 channel version with 2-in-1 triggering capability

signals from lower sensorvia’d through hybrid to

chips on top surface only

sensors wire-bondedabove and below

8 x 256 channel chipsbump-bonded to hybrid

need cluster width discriminationoffset and correlationtrigger formation and transmission

existing CBC L1 triggered short strip chip canbe adapted to provide 2-in-1 type trigger datafor CMS outer tracker