46th IEEE Semiconductor Interface Specialists Conference · In 1995, the SISC began presenting an award for the best student presentation, in honor of Professor E.H. Nicollian, University

46th IEEE

Semiconductor Interface Specialists Conference

December 2-5, 2015

Key Bridge Marriott, Arlington, VA www.ieeesisc.org

CONFERENCE PROGRAM

General Chair: Peide Ye

Program Chair: Valeri Afanas’ev

Arrangements Chair: Chris Hinkle

Ex-Officio: Alex Demkov

The abstracts reproduced here are for the use of SISC attendees only. Authors are free to publish any of their work presented in this abstract book. To encourage future participants to submit new and

unpublished work, conference policy is that these abstracts may not be referenced. The presentations themselves, which may be significantly different from the associated abstracts, may be cited “as

discussed at the 2015 IEEE SISC, Arlington, VA.”

© 2015 IEEE SISC

SISC 2015

46th IEEE Semiconductor Interface

Specialists Conference December 2-5, 2015


Executive Committee General Chair Program Chair Arrangements Chair Ex-Officio

P. D. Ye Purdue U.

IN

V. V. Afanas’ev U. Leuven BELGIUM

C. L. Hinkle UT Dallas

TX

A. A. Demkov UT Austin

TX

Secretary: B. Kaczer, imec, BELGIUM

Registration: W. Walker, Widerkehr & Associates, MD

Technical Program Committee

T. Ando, IBM NY

P. Lenahan, Penn State U. PA

P. Blaise, LETI FRANCE

J. Lisoni, Universidad de Chile CHILE

R. Clark, TEL-AMAT USA

C. W. Liu, NTU TAIWAN

J. Conley, Oregon State U. OR

C. Marchiori, IBM SWITZERLAND

C. Dubourdieu, CNRS FRANCE

T. Matsuki, AIST JAPAN

D. Jena, Notre Dame IN

L. Pantisano, GLOBALFOUNDRIES NY

K. Kita, U. Tokyo JAPAN

M. Passlack, TSMC BELGIUM

B.-H. Lee, GIST KOREA

R. Pillarisetty, Intel USA

J. Robertson, U. Cambridge UK

SISC 2015

46th IEEE


December 2-5, 2015


SISC Ed Nicollian Award for Best Student Paper

In 1995, the SISC began presenting an award for the best student presentation, in honor of

Professor E.H. Nicollian, University of North Carolina at Charlotte. Professor Nicollian was a

pioneer in the exploration of the metal-oxide-semiconductor system, particularly in the area of

electrical measurements. His efforts were fundamental in establishing the SISC in its early years,

and he served as its technical program chair in 1982. With John Brews, he wrote the definitive

book, “MOS Physics and Technology,” published by Wiley Interscience.

The SISC Ed Nicollian Award for Best Student Paper is presented to the lead student author for

either an oral or a poster presentation. The winner is chosen by members of the technical

program committee at the end of the SISC. The award consists of a plaque, an honorarium, and a

permanent mention on the conference web site.

Winner of the 2014 SISC Ed Nicollian Award for Best Student Paper:

Aaron Barton, UT Dallas

“HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by MBE”

with R. Yue, S. McDonnell, R. Addou, A. Azcatl, H. Zhu, L. Ning, X. Peng, L. Colombo, J. Kim,

M. Kim, R. M. Wallace, and C. L. Hinkle

SISC 2015

46th IEEE


December 2-5, 2015


Wednesday Evening Tutorial

Wednesday, December 2, 2015, 8:00 PM

First introduced at SISC 2008, the Wednesday evening Tutorial aims to provide a good

foundation in a topic frequently covered at the conference, particularly benefiting students and

newcomers to the field. The Tutorial is free to all registered SISC attendees.

Iuliana Radu

imec, Belgium

Spin logic options for Beyond or Along CMOS

SISC 2015

46th IEEE


December 2-5, 2015


Conference Agenda Overview Wednesday, December 2, 2015

Registration ............................................................................................................. 6:00 PM – 8:00 PM Evening Tutorial ..................................................................................................... 8:00 PM – 9:30 PM Hospitality Room .................................................................................................... 9:30 PM – Midnight

Thursday, December 3, 2015 Registration ............................................................................................................. 8:00 AM – 5:00 PM Session 1 – 2D-growth and Characterization ....................................................... 8:00 AM – 10:10 AM Session 2 – Two-Dimensional Transport and Interfaces .................................... 10:30 AM – 12:05 PM Session 3 – Poster Preview Session I– Ge and 2D Devices .................................. 12:05 PM – 12:37 PM Session 4 – Future Silicon and Si Compounds ..................................................... 2:00 PM – 4:00 PM Session 5 – Wide-gap Nitride Semiconductors .................................................... 4:20 PM – 6:15 PM Session 6 – Poster Preview Session II– Wide Gap and Oxide Materials ........... 6:15 PM – 6:43 PM Poster Session I ....................................................................................................... 7:00 PM – 10:00 PM Hospitality Room .................................................................................................... 10:00 PM – Midnight

Friday, December 4, 2015 Registration ............................................................................................................. 8:00 AM – Noon Session 7 – AIII-BV Interfaces .............................................................................. 8:00 AM – 8:45 AM Session 8 – Ge Interfaces ....................................................................................... 8:45 AM – 10:20 PM Session 9 – 2D Devices ............................................................................................ 10:40 AM – 12:15 PM Session 10 – Poster Preview Session III Defects and Reliability ........................ 12:15 PM – 12:33 PM Technical Committee / Invited Speaker Luncheon ............................................ 12:33 PM – 2:00 PM Session 11 – Applications of Oxides ...................................................................... 2:00 PM – 3:40 PM Session 12 – Poster Preview Session IV AIII-BV and Memory Devices............... 4:00 PM – 4:38 PM Poster Session II ..................................................................................................... 4:50 PM – 6:50 PM Conference Banquet and Limerick Contest ......................................................... 7:00 PM – 10:00 PM Hospitality Room .................................................................................................... 10:00 PM – Midnight

Saturday, December 5, 2015 Session 13 – Towards Deep Scaling ...................................................................... 8:00 AM – 9:45 AM Session 14 – Oxide Switching and Trapping ........................................................ 10:05 AM – 11:40 AM Session 15 – AIII-BV Devices ................................................................................... 11:40 AM – 12:40 PM

SISC 2015

46th IEEE Semiconductor Interface Specialists Conference

December 2-5, 2015


Conference Program

Wednesday, December 2, 2015

Tutorial Session Chair: V. V. Afanas’ev

8:00 PM – 9:30 PM Tutorial - Spin logic options for Beyond or Along CMOS, I. Radu, imec, Belgium

9:30 PM – Midnight Hospitality Room

Thursday, December 3, 2015 8:00 AM Welcome and opening remarks

Session 1 – 2D-growth and Characterization Session Chairs: P. D. Ye and I. Radu

8:10 AM Opening remarks

8:15 AM 1.1 Invited - Monolayer Organic Films for Nucleation of ALD on Single Layer Graphene and TMD surfaces, J. H. Park1, I. Kwak1, E. Chagarov1, K. Sardashti1, H. C. P. Movva2, H. Chou2, S. K. Banerjee2, S. Fathipour3, S. K. Fullerton-Shirey3, A. Seabaugh3, S. Vishwanath4, H. G. Xing4, P. Choudhury5, and A. C. Kummel1, 1UCSD, 2UT Austin, 3U. Notre Dame, 4Cornell U., 5New Mexico Tech

8:50 AM 1.2 - MBE growth of layered 2D semiconductor heterostructures: Transition metal dichalcogenides and topological insulators, A. T. Barton1, R. Yue1, L. A. Walsh1, H. Zhu1, L. Cheng1, N. Lu1, R. Addou1, S. McDonnell1, J. W. P. Hsu1, J. Kim1, M. J. Kim1, L. Colombo2, R. M. Wallace1, and C. L. Hinkle1, 1UT Dallas, 2Texas Instruments

SISC 2015

9:10 AM 1.3 - Epitaxial 2D semiconductor / 2D metal v.d.Waals heterostructures, D. Tsoutsou, K. E. Aretouli, J. Marquez-Velasco, P. Tsipas, E. Xenogiannopoulou, N. Kelaidis, and A. Dimoulas, NCSR DEMOKRITOS, Greece

9:30 AM 1.4 - Paramagnetic defects in polycrystalline 2D MoS2 films grown on SiO2 by Mo sulfurization, A. Stesmans1, S. Iacovo1, D. Chiappe2, I. Radu2, C. Huyghebaert2, S. De Gendt2, and V. V. Afanas’ev1, 1U. Leuven, Belgium, 2imec, Belgium

9:50 AM 1.5 - Atomic-layer deposited Al2O3 films on graphene sheets by non-aqueous ALD, Y. Zhang1, S. I. Shim2, H. Li1, R. Liu1, and Z.-J. Qiu1, 1Fudan U., China, 2Samsung, Korea

10:10 AM Coffee Break

Session 2 - Two-Dimensional Transport and Interfaces Session Chair: A. Kummel

10:30 AM 2.1 Invited - Physics of electronic transport in low-dimensionality materials for future FETs, M. V. Fischetti, W. G. Vandenberghe, A. S. Negreira, Z.-Y. Ong, and B. Fu, UT Dallas

11:05 AM 2.2 - Design of Band Offsets for Transition Metal Dichalcogenide Tunnel FET, Y. Guo, and J. Robertson, Cambridge U., UK

11:25 AM 2.3 - Schottky barrier height measurement for Pd metal on MoS2 bulk by in situ XPS, H. Dong1,C. Gong2, R. Addou2,S. McDonnell2, X. Qin2, W. Wang1, W. Wang1, C. L. Hinkle2, and R. M. Wallace2, 1Nankai U., China, 2UT Dallas

11:45 AM 2.4 - Surface States Engineering and Schottky Barrier Height Reduction in metal/MoS2 contacts through Sulfur Treatment, S. Bhattacharjee, K. L. Ganapathi, D. N. Nath, and N. Bhat, IIS Bangalore, India

Session 3 - Poster Preview Session I– Ge and 2D Devices Session Chair: A. Demkov

12:05 PM Opening remarks 12:07 PM 3.1 - Fabrication and Numerical Simulation for Eliminating Interfacial Layers

from High-K/Metal Gates of Germanium MOS Device, C.-L. Chu, J.-L. Chen, B.-Y. Chen, and G.-L. Luo, 1National Nano Device Laboratories, Taiwan, 2I-Shou U., Taiwan

12:09 PM 3.2 - Platinum Effect in Post Deposition Annealing Performed on Ge/HfO2/Pt Structures, G. K. Rolim, G. V. Soares, and C. Radtke, UFRGS, Brasil

12:11 PM 3.3 - Surface Passivation of Ge/GeSn/Ge Using Atomic Layer Deposited SiO2 and Al2O3, C.-Y. Lin1, S.-H. Huang1, C.-T. Lu1, C. W. Liu1,Y.-C. Huang2, H. Chung2, and C.-P. Chang2, 1National Taiwan U., Taiwan, 2Applied Materials

12:13PM 3.4 - Reduced Interface Trap Density by Al Capping on Al2O3 Stack on Ge, C.-H. Huang, Y.-S. Huang, T.-Y. Lin, and C. W. Liu, National Taiwan U., Taiwan

12:15 PM 3.5 - Nitride Passivation of the Interface between High-k Dielectrics and SiGe, K. Sardashti1, K.-T. Hu1, A. C. Kummel1, S. Madisetti2, S. Oktyabrsky2, S. Siddiqui3, B. Sahu3, N. Yoshida4, and J. Kachian4, 1UCSD, 2SUNY, 3GLOBALFOUNDRIES, 4Applied Materials

12:17 PM 3.6 - Effect of ex-situ S-passivation on the quality of Al2O3/Si0.3Ge0.7(001) interfaces, K. Sardashti1, K.-T. Hu1, A. C. Kummel1, S. Madisetti2, S. Oktyabrsky2, S. Siddiqui3, B. Sahu3, N. Yoshida4, and J. Kachian4, 1UCSD, 2SUNY, 3GLOBALFOUNDRIES, 4Applied Materials

12:19 PM 3.7 - Enhanced performance of Y-GeO2/Ge Gate Dielectric by O2 Post-deposition Annealing and Al Capping, Y.-S. Huang, C.-H. Huang, C.-Y. Lin, and C. W. Liu, National Taiwan U., Taiwan

12:21 PM 3.8 - Ge CMOS Devices: Performance and Variation Dependence on Operation Mode and Channel Thickness, H. Wu, W. Wu, G. Qiu, and P. D. Ye, Purdue U.

12:23 PM 3.9 - Electric field induced topological to trivial insulating phase transition in stanene, M. Houssa1, B. van den Broek1, K. Iordanidou1, A. Lu1,2, G. Pourtois2, V. V. Afanas’ev1, and A. Stesmans1, 1U. Leuven, Belgium, 2imec, Belgium

12:25 PM 3.10 - Electronic properties of defective HfS2 monolayers: A first-principles study, K. Iordanidou1, M. Houssa1, G. Pourtois2, V. V. Afanas’ev1, A. Stesmans1, 1U. Leuven, Belgium, 2imec, Belgium

12:27 PM 3.11 - First-principles study of the performance degradation of 2D channel-based transistors with sub-10 nm gate lengths, A. Lu1,2, G. Pourtois1, K. Stokbro3, A. Thean1, I. Radu1, and M. Houssa2, 1imec, Belgium, 2U. Leuven, Belgium, 3QuantumWise, Denmark

12:29 PM 3.12 - Fermi level of graphene under a metal contact modulated by high pressure hydrogen anneal, Y. J. Kim, S. Y. Kim, U. Jung, S. K. Lee, K. E. Chang, C. Cho, and B. H. Lee, GIST, Korea

12:31 PM 3.13 - The role of interface charge traps in the RF operation of graphene devices, S. K. Lee, U. Jung, C. Cho, T. J. Yoo, A. N. R. Reza, H. I. Lee, and B. H. Lee, GIST, Korea

12:33 PM 3.14 - Top-Gated, Few-Layer MoS2 Field Effect Transistors with In-situ UV-Ozone Surface Functionalization and Sub-10nm HfO2 Dielectric: Fabrication and Electrical Characterization, P. Zhao1, A. Azcatl1, P. Bolshakov-Barrett1, P. K. Hurley2, R. M. Wallace1, and C. D. Young1, 1UT Dallas, 2Tyndall National Institute, Ireland

12:35 PM 3.15 - Direct Atomic Layer Deposition of High-κ Dielectric Films on Graphene with Assistance of Pre-H2O Treatment, L. Zheng, X. Cheng, Y. Yu, D. Cao, Z. Wang, Q. Wang, and L. Shen, Chinese Academy of Sciences, China

12:37 PM Adjourn for Lunch

Session 4 – Future Silicon and Si Compounds Session Chairs: P. Lenahan and K. Kita

2:00 PM Opening remarks 2:05 PM 4.1 Invited - Silicon at the two-dimensional limit: the debut of the silicene

transistor, A. Molle, CNR-IMM, Italy

2:40 PM 4.2 - Investigation of ternary SiGeSn MOS structures, C. Schulte-Braucks1, T. Lehndorff1, S. Glass1, N. von den Driesch1, S. Wirths1, J.M. Hartmann2,3, Z. Ikonic4, S. Mantl1, and D. Buca1, 1Forschungszentrum Jülich, Germany, 2U. Grenoble Alpes, France, 3CEA-LETI, France, 4U. Leeds, UK

3:00 PM 4.3 - Passivation and Functionalization of SiGe(001) and (110) using atomic hydrogen, H2O2, TMA Dosing for high-k ALD Nucleation, S. W. Park1, H. Kim1, S. Wolf1, E. Chagarov1, S. Siddiqui2, B. Sahu2, N. Yoshida3, J. Kachian3, and A. C. Kummel1, 1UCSD, 2GLOBALFOUNDRIES, 3Applied Materials

3:20 PM 4.4 - SiO2/SiC Interface Nitridation by High Temperature Pure Nitrogen Annealing, T. Hosoi, A. Chanthaphan, T. Shimura, and H. Watanabe, Osaka U., Japan

3:40 PM 4.5 - Surface Carrier Density Dependence of Hall Mobility in SiC MOS Inversion Layer, M. Noguchi1, T. Iwamatsu1, H. Amishiro1, H. Watanabe1, S. Nakata1, T. Kuroiwa1,K. Kita2, and S. Yamakawa1, 1Mitsubishi Electric, Japan, 2U. Tokyo, Japan

4:00 PM Coffee Break

Session 5 – Wide-gap Nitride Semiconductors Session Chairs: J. Robertson and M. Kuzuhara

4:20 PM 5.1 Invited - GaN-based HEMTs for High-voltage and Low-loss Power Applications, M. Kuzuhara, J. T. Asubar, and H. Tokuda, U. Fukui, Japan

4:55 PM 5.2 - Effect of Nitrogen Incorporation into Al-based Gate Insulator in AlGaN/GaN MOS-HEMT, R. Asahara1, M. Nozaki1, T. Yamada1, J. Ito1, S. Nakazawa2, M. Ishida2, T. Ueda2, A. Yoshigoe3, T. Hosoi1, T. Shimura1, and H. Watanabe1, 1Osaka U., Japan, 2Panasonic, Japan, 3Japan Atomic Energy Agency, Japan

5:15 PM 5.3 - The role of electron transport in the charge trapping at the III-N/dielectric interface in AlGaN/GaN MIS-HEMT structures, C. Ostermaier1, P. Lagger1, G. Prechtl1, A. Grill2, T. Grasser2, and D. Pogany2, 1Infineon, Austria, 2TU Vienna, Austria

5:35 PM 5.4 - Ultra-low Leakage and High-breakdown AlGaN/GaN MOSHEMTs on Si Substrate Enabled by Epitaxial MgCaO Gate Dielectric, H. Zhou1, X. Lou2, K. D. Chabak3, R. G. Gordon2, and P. D. Ye1, 1Purdue U., 2Harvard U., 3Air Force Research Laboratory

5:55 PM 5.5 - Plasma Enhanced Atomic Layer Deposition Half Cycle Study of Al2O3 on AlGaN/GaN High Electron Mobility Transistors, X. Qin and R. M. Wallace, UT Dallas

Session 6 - Poster Preview Session II– Wide Gap and Oxide Materials

Session Chair: M. Baklanov 6:15 PM 6.1 - Errors Due to Nonlinear and Energy-Dependent Phenomena in the MOS

Conductance Technique, S. Swandono, D. Morisette, and J. A. Cooper, Purdue U.

6:17 PM 6.2 - Effects of High-k Passivation-Layer on Breakdown Voltage in AlGaN/GaN HEMTs, H. Hanawa, Y. Satoh, and K. Horio, Shibaura Institute of Technology, Japan

6:19 PM 6.3 - Localized VLS Epitaxy Process as a P-type Doping Alternative Technique for 4H-SiC P/N Junctions, S. Sejil1,2, M. Lazar2, D. Carole1, C. Brylinski1, D. Planson2, G. Ferro 1, and C. Raynaud 2, 1U. Lyon 1, France, 2Ecole Centrale de Lyon, France

6:21 PM 6.4 - Study of interface states in AlGaN/GaN MIS-HEMTs with HfO2 fabricated by atomic layer deposition, T. Kubo, G. Nishino, and T. Egawa, Nagoya Institute of Technology, Japan

6:23 PM 6.5 - Effect of GaN channel thickness on the performance of AlGaN/GaN HEMT, S.-J. Chang1, M. Bhuiyan1, H.-S. Kang2, J.-H. Lee3 , Y.-W. Jo2, S. Cui1, J.-H. Lee2, and T.P. Ma1, 1Yale U., 2Kyungpook National U., Korea, 3Samsung, Korea

6:25 PM 6.6 - Nitrogen Incorporation into Al2O3 as a Source of Negative Fixed Charges: A Path to Enhancement Mode GaN Device Operation, M. A. Negara, R. D. Long, and P. C. McIntyre, Stanford U.

6:27 PM 6.7 - Reliability of Electrically Degraded GaN/AlGaN/GaN/ Si High Electron Mobility Transistors and Role of Surface Oxide Particles, S. Ghosh, S. Das, P. Mukhopadhyay, S. M. Dinara, and D.Biswas, IIT Kharagpur, India

6:29 PM 6.8 - Formation of nanoscale BaTiO3 MOSCAPs without wet-etching, P. Ponath1, A. B. Posadas1, M. Schmidt2, P. K. Hurley2, R. Duffy2, and A. A. Demkov1, 1UT Austin, 2Tyndall National Institute, Ireland

6:31 PM 6.9 - Impact of Template Residues on Electrical Properties of Spin-on Ultra Low-k Dielectrics, M. Krishtab1,2, V. V. Afanas’ev2, A. Stesmans2, S. De Gendt1,2, and M. R. Baklanov1, 1imec, Belgium, 2U. Leuven, Belgium

6:33 PM 6.10 - Effects of top TiN deposition process on electrical and physical properties of ferroelectric HfSiO MIM capacitor, Y. Kamimuta, S. Fujii, R. Takaishi, T. Ino, Y. Nakasaki, M. Saitoh, and M. Koyama, Toshiba Corporation, Japan

6:35 PM 6.11 - Self-limiting Oxygen Vacancy formation into Anatase-TiO2 Films by Trimethylaluminium, I. Yamamoto1,2, T. Nabatame2,3, T. Sawada2,3, A. Ohi2, K. Kurishima4, D. D. Thang2,3, T. Nagao2,3, T. Chikyo2, A. Ogura4, and T. Ohishi1, 1Shibaura Institute of Technology, Japan, 2NIMS, Japan, 3CREST, Japan, 4Meiji U., Japan

6:37 PM 6.12 - Electrical Characteristics of 4H-SiC Metal Insulator Semiconductor Structures with Different Dielectrics for MESFET Applications, M. Hema Lata Rao and N. V. L. Narasimha Murty, IIT Bhubaneswar, India

6:39 PM 6.13 - The electronic structures of TiO2/Ti4O7, Ta2O5/TaO2 interfaces and the interfacial effects of dopants, H. Li, Z. Zhang, and L. Shi, Tsinghua U., China

6:41 PM 6.14 - Electron blocking by AlInN back barrier in GaN HEMT, X. G. He1 and D. G. Zhao2, Chinese Academy of Sciences, China

6:43 PM Adjourn

Poster Session I Session Chairs: C. Hinkle and V. V. Afanas’ev

7:00 PM – 10:00 PM Poster Session I 10:00 PM – Midnight Hospitality Room

Friday, December 4, 2015 8:00 AM Morning announcement and opening remarks

Session 7 – AIII-BV Interfaces

Session Chair: A. Molle 8:05 AM 7.1 - Border trap reduction in Al2O3/InGaAs gate stacks by low temperature

atomic layer deposition of the dielectric, K. Tang1, R. Winter2, R. Droopad3, M. Eizenberg2, and P. C. McIntyre1, 1Stanford U., 2Technion, Israel, 3Texas State U.

8:25 AM 7.2 - Improvement of Electrical Characteristics of La2O3/InGaAs Gate Stacks by Ultra-thin ALD Al2O3 Capping Layers, C.-Y. Chang1,2, M. Takenaka1,2, and S. Takagi1,2, 1U. Tokyo, Japan, 2JST-CREST, Japan

Session 8 – Ge Interfaces Session Chair: CheeWee Liu

8:45 AM 8.1 Invited - Materials and Process Controls in Germanium Gate Stacks, A. Toriumi, U. Tokyo, Japan

9:20 AM 8.2 - Properties of slow traps of ALD Al2O3/GeOx/Ge gate stacks with plasma post oxidation, M. Ke1,2, X. Yu1,2, M. Takenaka1,2, and S. Takagi1,2, 1U. Tokyo, Japan, 2JST-CREST, Japan

9:40 AM 8.3 - High Mobility at Ultralow EOT in Ge pMOSFET by Hf-rich Buffer Layer and Microwave Annealing, C.-C. Li1, K.-S. Chang-Liao1, T.-M. Lee1, M.-C. Li1, W.-F. Chi1, T.-C. Chen1, T.-H. Su1, Y.-W. Chang1, C.-C. Tsai1, Y.-L. Li1, L.-J. Liu1, C.-H. Fu1, C.-C. Lu1, and Y.-J. Lee2, 1National Tsing Hua U., Taiwan, 2National Nano Device Laboratories, Taiwan

10:00 AM 8.4 - Back Gate Bias induced Carrier Mobility Enhancement in Ge-on-insulator MOSFETs, W. Wu1,2,3, H. Wu3, J. Zhang3, M. Si3, Y. Zhao1,2, and P. D. Ye3, 1Nanjing U., China, 2Zhejiang U., China, 3Purdue U.

10:20 PM Coffee Break

Session 9 – 2D Devices Session Chair: M. Fischetti

10:40 AM 9.1 Invited - Two-dimensional Layered Materials and Nano-scale Devices, W. Zhu, UIUC

11:15 AM 9.2 - Gate tunable high photo responsivity due to the unique photo carrier transfer mechanism at graphene/Si interface, K. E. Chang, U. Jung, T. J. Yoo, H. J. Hwang, W. B. Yoo, Y. J. Kim, S. K. Lee, and B. H. Lee, GIST, Korea

11:35 AM 9.3 - Graphene barristor with nitrogen doped ZnO for high on/off ratio and wide barrier height modulation, H. J. Hwang, W. B. Yoo, K. E. Chang, C. H. Shim, C. Cho, J. H. Yang, Y. J. Kim, S. K. Lim, W. Park, and B. H. Lee, GIST, Korea

11:55 AM 9.4 - Low frequency noise in high performance ambipolar few-layer BP transistors, X. Li, Huazhong U. Science and Technology, China

Session 10 – Poster Preview Session III Defects and Reliability Session Chair: P. Blaise

12:15 PM 10.1 - Ab-initio Simulation on Higher Miller Index Si:SiO2 Interface for Application in FinFET, H. Li, Y. Guo, and J. Robertson, U. Cambridge, UK

12:17 PM 10.2 - Interface Trap Density Extraction of Ultra-scaled MOSFETs, M. Si, J. J. Gu, J. Zhang, and P. D. Ye, Purdue U.

12:19 PM 10.3 - Mechanism of subthreshold swing degradation in p-type tunnel FETs, U. Jung1, S. M. Kim1, D. Lim2, K. E. Chang1, Y. J. Kim1, S. C. Kang1, S. K. Lim1, C. Choi2, and B. H. Lee1, 1GIST, Korea, 2Hanyang U., Korea

12:21 PM 10.4 - Al2O3 Deposition by Ultrasonic Spray Pyrolysis Technique for Non-planar MOS Devices, J.-H. Wang1, J.-L. Lai1, P.-A. Chen1, M.-H. Chiang1, W.-C. Hsu1, W.-C. Sun2, and S.-Y. Wei2, 1National Cheng Kung U., Taiwan, 2Industrial Technology Research Institute, Taiwan

12:23 PM 10.5 - Atomic Layer Deposited Alumina-Silicon Interfaces: Effects of Non-Hydrolytic Chemistries, R. Marstell and N. C. Strandwitz, Lehigh U.

12:25 PM 10.6 - Understanding of oxygen diffusion at the SiO2/Si interface by combining Activation Relaxation Technique to first principles calculations, N. Salles1,2, A. Hémeryck1,2, N. Mousseau3, A. Estève1,2, M. Djafari Rouhani1,2 and N. Richard4, 1CNRS, France, 2U. Toulouse, France, 3U. Montréal, Canada, 4CEA, France

12:27 PM 10.7 - Quantitative detection of sub-surface nano-scale defects in semiconductor wafers via terahertz scanning reflectometry and imaging, A. Rahman, S. Bass, and A. K. Rahman, Applied Research & Photonics

12:29 PM 10.8 - Response of Nano-Scaled Oxide Film Thickness of p-channel MOSFET on the Low Absorbed Doses and Low Absorbed Dose Rates, M. Pejovic1, K. Stankovic2, I. Fetahovic3, and P. Osmokrovic3, 1U. Nis, Serbia, 2U. Belgrade, Serbia, 3State U. Novi Pazar, Serbia

12:31 PM 10.9 - Defect-assisted GIDL reduction and Performance Analysis of SiGe channel pFET without Ge Pre-amorphization implant for scaled supply voltages, V. A. Tiwari1, R. Divakaruni2, T. Hook2, D. R. Nair1, 1IIT Madras, India, 2IBM

12:33 PM – 2:00 PM Committee / Invited Speaker Luncheon

Session 11 – Applications of Oxides Session Chairs: C. Dubourdieu and B. Magyari-Kope

2:00 PM Opening Remarks 2:05 PM 11.1 Invited - Ultra low-k insulating materials for advanced nanoelectronics, M.

R. Baklanov, imec, Belgium 2:40 PM 11.2 - Conductance and Capacitance of Bilayer Protective Oxides for Silicon

Water Splitting Anodes, A. G. Scheuermann1, K. W. Kemp1, K. Tang1, P. F. Satterthwaite1, D. Q. Lu1, T. Ito1,2, C. E. D. Chidsey1, and P. C. McIntyre1, 1Stanford U., 2Tokyo Electron

3:00 PM 11.3 - Electrical Characterization of Epitaxial SrTiO3 (STO) on Si by Inelastic Electron Tunneling Spectroscopy (IETS) and Temperature Dependent I-V Measurements, S. Ren1, M. Bhuiyan1, J. Yang1, S. Chang1, K. S. Chang-Liao2, and T.P. Ma1, 1Yale U., 2National Tsing Hua U., Taiwan

3:20 PM 11.4 - Electro-optically active barium titanate thin films on Si, K. J. Kormondy1, S. Abel2, Y. Popoff2, D. Caimi2, C. Marchiori2, M. Sousa2, M. D. Rossell3, A. A. Demkov1, J. Fompeyrine2, 1UT Austin, 2IBM, Switzerland, 3Swiss Federal Laboratories for Materials Science and Technology, Switzerland

3:40 PM 11.5 - Study of C-doped InSiO as a novel channel material for oxide TFT, K. Kurishima1, 2, T. Nabatame2, N. Mitoma2, T. Kizu2, K. Tsukagoshi2, T. Sawada2, A. Ohi2, I. Yamamoto2, 3, T. Ohishi3, T. Chikyo2, and A. Ogura1, 1Meiji U., Japan, 2NIMS, Japan, 3Shibaura Institute of Technology, Japan

Session 12 - Poster Preview Session IV AIII-BV and Memory Devices Session Chair: M. Frank

4:00 PM 12.1 - Effect of surface treatments in InGaAs MOS capacitors fabrication analyzed by DLTS, G. Chicot 1, P. Ferrandis 1,2, J. Duvernay 1, M. Casse 1, M. Billaud 1, H. Boutry 1, M. Martin 3, T. Baron 3, M. Vinet 1, G. Reimbold 1, 1CEA-LETI, France, 2U. Toulon IM2NP, France, 3U. Grenoble Alpes LTM, France

4:02 PM 12.2 - Total Ionizing Dose Effects on GaAs MOSFETs with Epitaxial High-k Gate Dielectrics, S. Ren1, J. Zhang2, M. Si2, K. Ni3, X. Wan1, J. Chen3, X. Sun1, E. X. Zhang3, D. M. Fleetwood3, P. D. Ye2, S. Cui1, and T. P. Ma1, 1Yale U., 2Purdue U., 3Vanderbilt U.

4:04 PM 12.3 - InAs-Oxide Interfaces upon Thermal Oxidation and High-k ALD Investigated by XPS, A. Troian, J. Knutsson, A. S. Babadi, L.-E. Wernersson, A. Mikkelsen, and R. Timm, Lund U., Sweden

4:06 PM 12.4 - Interfacial electronic structure of the noble metals on α2-GaAs(001)-2x4 surface: Atom-to-atom interaction and the Schottky barrier height, W. S. Chen1, C. P. Cheng2, G. J. Wei2, Y. T. Cheng2, C. H. Wei1, Y. C. Lin1, Y. H. Lin3, K. Y. Lin3, T. W. Pi1, J. Kwo4, and M. Hong3, 1National Synchrotron Radiation Research Center, Taiwan, 2National Chiayi U., Taiwan, 3National Taiwan U., Taiwan, 4National Tsing Hua U., Taiwan

4:08 PM 12.5 - First demonstration of cluster tool based ICP etching of (100) and (110) InGaAs MOSCAPs followed by in-situ ALD deposition of HfO2 including nitrogen and hydrogen plasma passivation for non-planar III-V MOSFETs, Y.-C. Fu1, U. Peralagu1, X. Li1, D. Millar1,O. Ignatova1,H. Zhou1,M. Steer1,R. Droopad2, and I. Thayne1, 1U. Glasgow, UK, 2Texas State U.

4:10 PM 12.6 - The formation of inverse InGaAs/HfO2 interfaces via epitaxial lateral overgrowth, P. Tejedor and M. Benedicto, ICMM, Spain

4:12 PM 12.7 - Surface passivation and functionalization of In0.53Ga0.47As(001)-(2x4) and Si0.5Ge0.5(110) surfaces by silicon containing control layers, M. Edmonds1, T. J. Kent1, S. Wolf1, M. Chang2, J. Kachian2, R. Droopad3, E. Chagarov1, and A. C. Kummel1, 1UCSD, 2Applied Materials, 3Texas State U.

4:14 PM 12.8 - Fluorine Functionalization Prior to Al2O3 ALD Passivation of Etched InAs Surfaces, E. R. Cleveland, J. A. Nolde, C. Affouda, and E. Aifer, Naval Research Laboratory

4:16 PM 12.9 - Al oxy-nitride for higher Reliability high K gate stacks on Ge and III-Vs, Y. Guo and J. Robertson, Cambridge U., UK

4:18 PM 12.10 - Interfacial electronic structure of aluminum on GaAs(001)-4x6: Re-examination of the interface with ALD tri-methylaluminum and water, T. W. Pi1, C. P. Cheng2, Y. T. Cheng2, W. S. Chen1, S. Wang2, G. J. Wei2, C. H. Wei1, Y. C. Lin1, Y. H. Chang3, Y. H. Lin3, J. Kwo4, and M. Hong3, 1National Synchrotron Radiation Research Center, Taiwan, 2National Chiayi U., Taiwan, 3National Taiwan U., Taiwan, 4National Tsing Hua U., Taiwan

4:20 PM 12.11 - Electrical Properties of ZrO2/InAs MOSCAPs, A. S. Babadi, E. Lind, and L.-E. Wernersson, Lund U., Sweden

4:22 PM 12.12 - Enhanced ALD-Y2O3 Thin Film Quality and Interface Cleansing Achieved by UHV Annealing for III-V Passivation, K. Y. Lin1, Y. H. Lin1, K. H. Chen1, L. B. Young1, C. H. Fu1, C. P. Cheng2, T. W. Pi3, J. Kwo4, and M. Hong1, 1National Taiwan U., Taiwan, 2National Chiayi U., Taiwan, 3National Synchrotron Radiation Research Center, Taiwan, 4National Tsing Hua U., Taiwan

4:24 PM 12.13 - Negative Differential Resistance due to Real Space Transfer of Hot Electrons in In0.53Ga0.47As Channel MOS-HEMTs, A. S. Yadav, K. H. Goh, X. Gong, and Y.-C. Yeo, National U. Singapore, Singapore

4:26 PM 12.14 - First principles examination of the switching mechanism of the phase change memory (TRAM) using superlattice GeTe/Sb2Tb3, M. Takato, H. Shirakawa, M. Araidai, and K. Shiraishi, Nagoya U., Japan

4:28 PM 12.15 - Oxide Stress Separation technique for the assessment of Inter-Gate Dielectric integrity in 40 nm Flash memory cells, A. Dobri1,2,3, S. Jeannot1, F. Piazza1, C. Jahan2, J. Coignus2, L. Perniola2, and F. Balestra3, 1STMicroelectronics, France, 2CEA-LETI, France, 3IMEP-LAHC, France

4:30 PM 12.16 - Multi-State Sub-9 nm QDC-SWS FETs for Compact Memory Circuits, F. Jain1, M. Lingalugari1, B. Saman1, P.-Y. Chan 1, P. Gogna1, E.-S. Hasaneen1, J. Chandy1, and E. Heller2, 1UCONN, 2Synopsys

4:32 PM 12.17 - Investigation of the Ion Exchanges between Al2O3 and CuTe for Hybrid RRAM, C. Nail1, P. Blaise1, G. Molas1, M. Bernard1, A. Roule1, A. Toffoli1, C. Vallée2, and L. Perniola1, 1CEA-LETI, France, 2CNRS LTM, France

4:34 PM 12.18 - Unified Kinetic Monte Carlo simulation of Forming, SET, RESET and data retention for Conductive Bridge RAM, a bond between material properties and device behavior., J. Guy, G. Molas, and L. Perniola, CEA-LETI, France

4:36 PM 12.19 - FET transconductance as a probe of ferroelectric/semiconductor interface, A.Hanna, M. Ghoneim, and M. M. Hussain, King Abdullah U., Saudi Arabia

4:38 PM Adjourn

Poster Session II Session Chairs: C. Hinkle and V. V. Afanas’ev

4:50 PM – 6:50 PM Poster Session II 7:00 PM – 10:00 PM Conference Banquet and Limerick Contest 10:00 PM – Midnight Hospitality Room

Saturday, December 5, 2015 8:00 AM Morning announcements

Session 13 – Towards Deep Scaling Session Chair: Wenjuan Zhu

8:05 AM 13.1 - At 10nm node, what is the AC impact of dielectric insertions in contact initially meant to decrease the DC contact resistivity?, J. Borrel1, 2, 3, L. Hutin2, O. Rozeau2, M.-A. Jaud2, S. Martinie2, E. Dubois3, and M. Vinet2, 1STMicroelectronics, France, 2CEA-LETI, France, 3IEMN, France

8:25 AM 13.2 - Deciphering Reliability in High-K Metal Gate Technology, M. Drescher1, E. Erben2, C. Grass2, M. Trentzsch2, F. Lazarevic3, R. Leitsmann3, P. Plänitz3, T. Mtchedlidze4, K. Seidel1, and R. Liske1, 1Fraunhofer, Germany, 2GLOBALFOUNDRIES, Germany, 3AQcomputare, Germany, 4TU Dresden, Germany

8:45 AM 13.3 - Comprehensive Defect Spectroscopy and Multi-Frequency Charge Pumping Study of HKMG Transistors, J. Ocker1, M. Hoffmann1, M. Drescher2, T. Mtchedlidze3, F. Lazarevic4, R. Leitsmann4, S. Slesazeck1, E. Erben5, and T. Mikolajick3, 1NaMLab, Germany, 2Fraunhofer, Germany, 3TU Dresden, Germany, 4AQcomputare, Germany, 5GLOBALFOUNDRIES, Germany

9:05 AM 13.4 - Distribution of the energy levels of single interface traps in nanoscale MOSFETs and a comparison of the actual number of traps with the values determined by conventional charge pumping theory, T. Tsuchiya, Shimane U., Japan

9:25 AM 13.5 - Influence of Low Thermal Budget Processing and Post-Processing on Performance and Reliability of HfO2/TiN Gate-First for 3D VLSI Integration, C.-M. V. Lu1,2, R. Gassilloud1, C. Fenouillet-Beranger1, C. Leroux1, X. Garros1, A. Toffoli1, N. Rambal1, V. Lapras1, J.-M. Pedini1, M.-P. Samson1, B. Previtali1, N. Bernier1, G. Audoit1, V. Delaye1, L. Brunet1, P. Batude1, T.Skotnicki2, and M. Vinet1, 1CEA-LETI, France, 2STMicroelectronics, France

9:45 AM Coffee Break

Session 14 – Oxide Switching and Trapping Session Chairs: J. Robertson and A. Toriumi

10:05 AM 14.1 Invited - Microscopic Aspects of Conductive Filaments Evolution in Metal Oxide RRAM devices, B. Magyari-Köpe and Y. Nishi, Stanford U.

10:40 AM 14.2 - Impact of ALD process parameters on HfO2 based 1T-1R RRAM inter-cell variability and switching properties, A. Grossi1, E. Perez2, C. Zambelli1, P. Olivo1, R. Roelofs3, and C. Wenger2, 1U. Ferrara, Italy, 2IHP, Germany, 3ASM, Belgium

11:00 AM 14.3 - Ferroelectricity of Al-doped HfO2: Fast Polarization Switching, Long Retention and Robust Endurance, N. Gong1, X. Sun1, H. Jiang2, Q. Xia2, T. P. Ma1,3, 1Yale U., 2U. Massachusetts, 3Alacrity Semiconductors

11:20 AM 14.4 - The role of single oxygen or metal induced defect and correlated multiple defects in the formation of conducting filaments, H. Li, Z. Zhang, and L. Shi, Tsinghua U., China

Session 15 – AIII-BV Devices Session Chair: M. Passlack

11:40 AM 15.1 - Analysis of Switching Performance of III-V Hetero-junction Tunnel FETs, R. Pandey and S. Datta, Penn State U.

12:00 PM 15.2 - InGaAs Bulk FinFET with Vertical Sidewalls, J. Zhang, M. Si, W. Wu, and P. D. Ye, Purdue U.

12:20 PM 15.3 - Fin Width Effect on the Performance of InGaAs-based Independent Double-Gate Transistors, S.-J. Chang1, H. Zhou2, N. Gong1, M. Si2, P. D. Ye2, and T. P. Ma1, 1Yale U., 2Purdue U.

12:40 PM Closing remarks and adjourn

46th IEEE


December 2-5, 2015


Author Index

Abel S. 11.4 Addou R. 1.2, 2.3 Afanas’ev V. V. 1.4, 3.9, 3.10, 6.9 Affouda C. 12.8 Aifer E. 12.8 Amishiro H. 4.5 Araidai M. 12.14 Aretouli K. E. 1.3 Asahara R. 5.2 Asubar J. T. 5.1 Audoit G. 13.5 Azcatl A. 3.14 Babadi A. S. 12.3, 12.11 Baklanov M. R. 6.9, 11.1 Balestra F. 12.15 Banerjee S. K. 1.1 Baron T. 12.1 Barton A. T. 1.2 Bass S. 10.7 Batude P. 13.5 Benedicto M. 12.6 Bernard M. 12.17 Bernier N. 13.5 Bhat N. 2.4 Bhattacharjee S. 2.4 Bhuiyan M. 6.5, 11.3 Billaud M. 12.1 Biswas D. 6.7 Blaise P. 12.17 Bolshakov-Barrett P. 3.14 Borrel J. 13.1 Boutry H. 12.1

Brunet L. 13.5 Brylinski C. 6.3 Buca D. 4.2 Caimi D. 11.4 Cao D. 3.15 Carole D. 6.3 Casse M. 12.1 Chabak K. D. 5.4 Chagarov E. 1.1, 4.3, 12.7 Chan P.-Y. 12.16 Chandy J. 12.16 Chang C.-P. 3.3 Chang C.-Y. 7.2 Chang K. E. 3.12, 9.2, 9.3, 10.3 Chang M. 12.7 Chang S. 11.3 Chang S.-J. 6.5, 15.3 Chang Y. H. 12.10 Chang Y.-W. 8.3 Chang-Liao K.-S. 8.3, 11.3 Chanthaphan A. 4.4 Chen B.-Y. 3.1 Chen J. 12.2 Chen J.-L. 3.1 Chen K. H. 12.12 Chen P.-A. 10.4 Chen T.-C. 8.3 Chen W. S. 12.4, 12.10 Cheng C. P. 12.4, 12.10, 12.12 Cheng L. 1.2 Cheng X. 3.15 Cheng Y. T. 12.4, 12.10

SISC 2015

Chi W.-F. 8.3 Chiang M.-H. 10.4 Chiappe D. 1.4 Chicot G. 12.1 Chidsey C. E. D. 11.2 Chikyo T. 6.11, 11.5 Cho C. 3.12, 3.13, 9.3 Choi C. 10.3 Chou H. 1.1 Choudhury P. 1.1 Chu C.-L. 3.1 Chung H. 3.3 Cleveland E. R. 12.8 Coignus J. 12.15 Colombo L. 1.2 Cooper J. A. 6.1 Cui S. 6.5, 12.2 Das S. 6.7 Datta S. 15.1 De Gendt S. 1.4, 6.9 Delaye V. 13.5 Demkov A. A. 6.8, 11.4 Dimoulas A. 1.3 Dinara S. M. 6.7 Divakaruni R. 10.10 Djafari Rouhani M. 10.6 Dobri A. 12.15 Dong H. 2.3 Drescher M. 13.2, 13.3 Droopad R. 7.1, 12.5, 12.7 Dubois E. 13.1 Duffy R. 6.8 Duvernay J. 12.1 Edmonds M. 12.7 Egawa T. 6.4 Eizenberg M. 7.1 Erben E. 13.2, 13.3 Estève A. 10.6 Fathipour S. 1.1 Fenouillet-Beranger C. 13.5 Ferrandis P. 12.1 Ferro G. 6.3 Fetahovic I. 10.8 Fischetti M. V. 2.1 Fleetwood D. M. 12.2 Fompeyrine J. 11.4 Fu B. 2.1

Fu C.-H. 8.3, 12.12 Fu Y.-C. 12.5 Fujii S. 6.10 Fullerton-Shirey S. K. 1.1 Ganapathi K. L. 2.4 Garros X. 13.5 Gassilloud R. 13.5 Ghoneim M. 12.19 Ghosh S. 6.7 Glass S. 4.2 Gogna P. 12.16 Goh K. H. 12.13 Gong C. 2.3 Gong N. 14.3, 15.3 Gong X. 12.13 Gordon R. G. 5.4 Grass C. 13.2 Grasser T. 5.3 Grill A. 5.3 Grossi A. 14.2 Gu J. J. 10.2 Guo Y. 2.2, 10.1, 12.9 Guy J. 12.18 Hanawa H. 6.2 Hanna A. 12.19 Hartmann J.M. 4.2 Hasaneen E.-S. 12.16 He X. G. 6.14 Heller E. 12.16 Hema Lata Rao M. 6.12 Hinkle C. L. 1.2, 2.3 Hoffmann M. 13.3 Hong M. 12.4, 12.10, 12.12 Hook T. 10.10 Horio K. 6.2 Hosoi T. 4.4, 5.2 Houssa M. 3.9, 3.10, 3.11 Hsu J. W. P. 1.2 Hsu W.-C. 10.4 Hu K.-T. 3.5, 3.6 Huang C.-H. 3.4, 3.7 Huang S.-H. 3.3 Huang Y.-C. 3.3 Huang Y.-S. 3.4, 3.7 Hurley P. K. 3.14, 6.8 Hussain M. M. 12.19 Hutin L. 13.1

Huyghebaert C. 1.4 Hwang H. J. 9.2, 9.3 Hémeryck A. 10.6 Iacovo S. 1.4 Ignatova O. 12.5 Ikonic Z. 4.2 Ino T. 6.10 Iordanidou K. 3.9, 3.10 Ishida M. 5.2 Ito J. 5.2 Ito T. 11.2 Iwamatsu T. 4.5 Jahan C. 12.15 Jain F. 12.16 Jaud M.-A. 13.1 Jeannot S. 12.15 Jiang H. 14.3 Jo Y.-W. 6.5 Jung U. 3.12, 3.13, 9.2, 10.3 Kachian J. 3.5, 3.6, 4.3, 12.7 Kamimuta Y. 6.10 Kang H.-S. 6.5 Kang S. C. 10.3 Ke M. 8.2 Kelaidis N. 1.3 Kemp K. W. 11.2 Kent T. J. 12.7 Kim H. 4.3 Kim J. 1.2 Kim M. J. 1.2 Kim S. M. 10.3 Kim S. Y. 3.12 Kim Y. J. 3.12, 9.2, 9.3, 10.3 Kita K. 4.5 Kizu T. 11.5 Knutsson J. 12.3 Kormondy K. J. 11.4 Koyama M. 6.10 Krishtab M. 6.9 Kubo T. 6.4 Kummel A. C. 1.1, 3.5, 3.6, 4.3, 12.7 Kurishima K. 6.11, 11.5 Kuroiwa T. 4.5 Kuzuhara M. 5.1 Kwak I. 1.1 Kwo J. 12.4, 12.10, 12.12 Lagger P. 5.3

Lai J.-L. 10.4 Lapras V. 13.5 Lazar M. 6.3 Lazarevic F. 13.2, 13.3 Lee B. H. 3.12, 3.13, 9.2, 9.3, 10.3 Lee H. I. 3.13 Lee J.-H. 6.5, 6.5 Lee S. K. 3.12, 3.13, 9.2 Lee T.-M. 8.3 Lee Y.-J. 8.3 Lehndorff T. 4.2 Leitsmann R. 13.2, 13.3 Leroux C. 13.5 Li C.-C. 8.3 Li H. 1.5, 6.13, 10.1, 14.4 Li M.-C. 8.3 Li X. 9.4, 12.5 Li Y.-L. 8.3 Lim D. 10.3 Lim S. K. 9.3, 10.3 Lin C.-Y. 3.3, 3.7 Lin K. Y. 12.4, 12.12 Lin T.-Y. 3.4 Lin Y. C. 12.4, 12.10 Lin Y. H. 12.4, 12.10, 12.12 Lind E. 12.11 Lingalugari M. 12.16 Liske R. 13.2 Liu C. W. 3.3, 3.4, 3.7 Liu L.-J. 8.3 Liu R. 1.5 Long R. D. 6.6 Lou X. 5.4 Lu A. 3.9, 3.11 Lu C.-C. 8.3 Lu C.-M. V. 13.5 Lu C.-T. 3.3 Lu D. Q. 11.2 Lu N. 1.2 Luo G.-L. 3.1 Ma T. P. 12.2, 14.3, 15.3 Ma T.P. 6.5, 11.3 Madisetti S. 3.5, 3.6 Magyari-Köpe B. 14.1 Mantl S. 4.2 Marchiori C. 11.4 Marquez-Velasco J. 1.3

Marstell R. 10.5 Martin M. 12.1 Martinie S. 13.1 McDonnell S. 1.2, 2.3 McIntyre P. C. 6.6, 7.1, 11.2 Mikkelsen A. 12.3 Mikolajick T. 13.3 Millar D. 12.5 Mitoma N. 11.5 Molas G. 12.17, 12.18 Molle A. 4.1 Morisette D. 6.1 Mousseau N. 10.6 Movva H. C. P. 1.1 Mtchedlidze T. 13.2, 13.3 Mukhopadhyay P. 6.7 Nabatame T. 6.11, 11.5 Nagao T. 6.11 Nail C. 12.17 Nair D. R. 10.10 Nakasaki Y. 6.10 Nakata S. 4.5 Nakazawa S. 5.2 Narasimha Murty N. V. L. 6.12 Nath D. N. 2.4 Negara M. A. 6.6 Negreira A. S. 2.1 Ni K. 12.2 Nishi Y. 14.1 Nishino G. 6.4 Noguchi M. 4.5 Nolde J. A. 12.8 Nozaki M. 5.2 Ocker J. 13.3 Ogura A. 6.11, 11.5 Ohi A. 6.11, 11.5 Ohishi T. 6.11, 11.5 Oktyabrsky S. 3.5, 3.6 Olivo P. 14.2 Ong Z.-Y. 2.1 Osmokrovic P. 10.8 Ostermaier C. 5.3 Pandey R. 15.1 Park J. H. 1.1 Park S. W. 4.3 Park W. 9.3 Pedini J.-M. 13.5

Pejovic M. 10.8 Peralagu U. 12.5 Perez E. 14.2 Perniola L. 12.15, 12.17, 12.18 Pi T. W. 12.4, 12.10, 12.12 Piazza F. 12.15 Planson D. 6.3 Plänitz P. 13.2 Pogany D. 5.3 Ponath P. 6.8 Popoff Y. 11.4 Posadas A. B. 6.8 Pourtois G. 3.9, 3.10, 3.11 Prechtl G. 5.3 Previtali B. 13.5 Qin X. 2.3, 5.5 Qiu G. 3.8 Qiu Z.-J. 1.5 Radtke C. 3.2 Radu I. Tutorial, 1.4, 3.11 Rahman A. 10.7 Rahman A. K. 10.7 Rambal N. 13.5 Raynaud C. 6.3 Reimbold G. 12.1 Ren S. 11.3, 12.2 Reza A. N. R. 3.13 Richard N. 10.6 Robertson J. 2.2, 10.1, 12.9 Roelofs R. 14.2 Rolim G. K. 3.2 Rossell M. D. 11.4 Roule A. 12.17 Rozeau O. 13.1 Sahu B. 3.5, 3.6, 4.3 Saitoh M. 6.10 Salles N. 10.6 Saman B. 12.16 Samson M.-P. 13.5 Sardashti K. 1.1, 3.5, 3.6 Satoh Y. 6.2 Satterthwaite P. F. 11.2 Sawada T. 6.11, 11.5 Scheuermann A. G. 11.2 Schmidt M. 6.8 Schulte-Braucks C. 4.2 Seabaugh A. 1.1

Seidel K. 13.2 Sejil S. 6.3 Shen L. 3.15 Shi L. 6.13, 14.4 Shim C. H. 9.3 Shim S. I. 1.5 Shimura T. 4.4, 5.2 Shiraishi K. 12.14 Shirakawa H. 12.14 Si M. 8.4, 10.2, 12.2, 15.2, 15.3 Siddiqui S. 3.5, 3.6, 4.3 Skotnicki T. 13.5 Slesazeck S. 13.3 Soares G. V. 3.2 Sousa M. 11.4 Stankovic K. 10.8 Steer M. 12.5 Stesmans A. 1.4, 3.9, 3.10, 6.9 Stokbro K. 3.11 Strandwitz N. C. 10.5 Su T.-H. 8.3 Sun W.-C. 10.4 Sun X. 12.2, 14.3 Swandono S. 6.1 Takagi S. 7.2, 8.2 Takaishi R. 6.10 Takato M. 12.14 Takenaka M. 7.2, 8.2 Tang K. 7.1, 11.2 Tejedor P. 12.6 Thang D. D. 6.11 Thayne I. 12.5 Thean A. 3.11 Timm R. 12.3 Tiwari V. A. 10.10 Toffoli A. 12.17, 13.5 Tokuda H. 5.1 Toriumi A. 8.1 Trentzsch M. 13.2 Troian A. 12.3 Tsai C.-C. 8.3 Tsipas P. 1.3 Tsoutsou D. 1.3 Tsuchiya T. 13.4 Tsukagoshi K. 11.5 Ueda T. 5.2 Vallée C. 12.17

van den Broek B. 3.9 Vandenberghe W. G. 2.1 Vinet M. 12.1, 13.1, 13.5 Vishwanath S. 1.1 von den Driesch N. 4.2 Wallace R. M. 1.2, 2.3, 3.14, 5.5 Walsh L. A. 1.2 Wan X. 12.2 Wang J.-H. 10.4 Wang Q. 3.15 Wang S. 12.10 Wang W. 2.3, 2.3 Wang Z. 3.15 Watanabe H. 4.4, 4.5, 5.2 Wei C. H. 12.4, 12.10 Wei G. J. 12.4, 12.10 Wei S.-Y. 10.4 Wenger C. 14.2 Wernersson L.-E. 12.3, 12.11 Winter R. 7.1 Wirths S. 4.2 Wolf S. 4.3, 12.7 Wu H. 3.8, 8.4 Wu W. 3.8, 8.4, 15.2 Xenogiannopoulou E. 1.3 Xia Q. 14.3 Xing H. G. 1.1 Yadav A. S. 12.13 Yamada T. 5.2 Yamakawa S. 4.5 Yamamoto I. 6.11, 11.5 Yang J. 11.3 Yang J. H. 9.3 Ye P. D. 3.8, 5.4, 8.4, 10.2, 12.2, 15.2,

15.3 Yeo Y.-C. 12.13 Yoo T. J. 3.13, 9.2 Yoo W. B. 9.2, 9.3 Yoshida N. 3.5, 3.6, 4.3 Yoshigoe A. 5.2 Young C. D. 3.14 Young L. B. 12.12 Yu X. 8.2 Yu Y. 3.15 Yue R. 1.2 Zambelli C. 14.2 Zhang E. X. 12.2

Zhang J. 8.4, 10.2, 12.2, 15.2 Zhang Y. 1.5 Zhang Z. 6.13, 14.4 Zhao D. G. 6.14 Zhao P. 3.14 Zhao Y. 8.4 Zheng L. 3.15 Zhou H. 5.4, 12.5, 15.3 Zhu H. 1.2 Zhu W. 9.1

46th IEEE


December 2-5, 2015


Affiliation Index

Air Force Research Laboratory 5.4 Alacrity Semiconductors 14.3 Applied Materials 3.3, 3.5, 3.6, 4.3, 12.7 Applied Research & Photonics 10.7 AQcomputare, Germany 13.2, 13.3 ASM, Belgium 14.2 Cambridge U., UK 2.2, 12.9 CEA, France 10.6 CEA-LETI, France 4.2, 12.1, 12.15, 12.17, 12.18, 13.1, 13.5 Chinese Academy of Sciences, China 3.15, 6.14 CNR-IMM, Italy 4.1 CNRS LTM, France 12.17 CNRS, France 10.6 Cornell U. 1.1 CREST, Japan 6.11 Ecole Centrale de Lyon, France 6.3 Forschungszentrum Jülich, Germany 4.2 Fraunhofer, Germany 13.2, 13.3 Fudan U., China 1.5 GIST, Korea 3.12, 3.13, 9.2, 9.3, 10.3 GLOBALFOUNDRIES 3.5, 3.6, 4.3 GLOBALFOUNDRIES, Germany 13.2, 13.3 Hanyang U., Korea 10.3 Harvard U. 5.4 Huazhong U. Science and Technology, China 9.4 I-Shou U., Taiwan 3.1 IBM 10.10 IBM, Switzerland 11.4 ICMM, Spain 12.6 IEMN, France 13.1

SISC 2015

IHP, Germany 14.2 IIS Bangalore, India 2.4 IIT Bhubaneswar, India 6.12 IIT Kharagpur, India 6.7 IIT Madras, India 10.10 imec, Belgium Tutorial, 1.4, 3.9, 3.10, 3.11, 6.9, 11.1 IMEP-LAHC, France 12.15 Industrial Technology Research Institute, Taiwan 10.4 Infineon, Austria 5.3 Japan Atomic Energy Agency, Japan 5.2 JST-CREST, Japan 7.2, 8.2 King Abdullah U., Saudi Arabia 12.19 Kyungpook National U., Korea 6.5 Lehigh U. 10.5 Lund U., Sweden 12.3, 12.11 Meiji U., Japan 6.11, 11.5 Mitsubishi Electric, Japan 4.5 Nagoya Institute of Technology, Japan 6.4 Nagoya U., Japan 12.14 NaMLab, Germany 13.3 Nanjing U., China 8.4 Nankai U., China 2.3 National Cheng Kung U., Taiwan 10.4 National Chiayi U., Taiwan 12.4, 12.10, 12.12 National Nano Device Laboratories, Taiwan 3.1, 8.3 National Synchrotron Radiation Research Center, Taiwan 12.4, 12.10, 12.12 National Taiwan U., Taiwan 3.3, 3.4, 3.7, 12.4, 12.10, 12.12 National Tsing Hua U., Taiwan 8.3, 11.3, 12.4, 12.10, 12.12 National U. Singapore, Singapore 12.13 Naval Research Laboratory 12.8 NCSR DEMOKRITOS, Greece 1.3 New Mexico Tech 1.1 NIMS, Japan 6.11, 11.5 Osaka U., Japan 4.4, 5.2 Panasonic, Japan 5.2 Penn State U. 15.1 Purdue U. 3.8, 5.4, 6.1, 8.4, 10.2, 12.2, 15.2, 15.3 QuantumWise, Denmark 3.11 Samsung, Korea 1.5, 6.5 Shibaura Institute of Technology, Japan 6.2, 6.11, 11.5 Shimane U., Japan 13.4 Stanford U. 6.6, 7.1, 11.2, 14.1 State U. Novi Pazar, Serbia 10.8 STMicroelectronics, France 12.15, 13.1, 13.5 SUNY 3.5, 3.6

Swiss Federal Laboratories for Materials Science and Technology, Switzerland

11.4

Synopsys 12.16 Technion, Israel 7.1 Texas Instruments 1.2 Texas State U. 7.1, 12.5, 12.7 Tokyo Electron 11.2 Toshiba Corporation, Japan 6.10 Tsinghua U., China 6.13, 14.4 TU Dresden, Germany 13.2, 13.3 TU Vienna, Austria 5.3 Tyndall National Institute, Ireland 3.14, 6.8 U. Belgrade, Serbia 10.8 U. Cambridge, UK 10.1 U. Ferrara, Italy 14.2 U. Fukui, Japan 5.1 U. Glasgow, UK 12.5 U. Grenoble Alpes LTM, France 12.1 U. Grenoble Alpes, France 4.2 U. Leeds, UK 4.2 U. Leuven, Belgium 1.4, 3.9, 3.10, 3.11, 6.9 U. Lyon 1, France 6.3 U. Massachusetts 14.3 U. Montréal, Canada 10.6 U. Nis, Serbia 10.8 U. Notre Dame 1.1 U. Tokyo, Japan 4.5, 7.2, 8.1, 8.2 U. Toulon IM2NP, France 12.1 U. Toulouse, France 10.6 UCONN 12.16 UCSD 1.1, 3.5, 3.6, 4.3, 12.7 UFRGS, Brasil 3.2 UIUC 9.1 UT Austin 1.1, 6.8, 11.4 UT Dallas 1.2, 2.1, 2.3, 3.14, 5.5 Vanderbilt U. 12.2 Yale U. 6.5, 11.3, 12.2, 14.3, 15.3 Zhejiang U., China 8.4

Documents

46th IEEE Semiconductor Interface Specialists Conference · In 1995, the SISC began presenting an award for the best student presentation, in honor of Professor E.H. Nicollian, University