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1 Introduction to DDR SDRAM Bill Gervasi Technology Analyst [email protected]

1 Introduction to DDR SDRAM Bill Gervasi Technology Analyst [email protected]

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Page 1: 1 Introduction to DDR SDRAM Bill Gervasi Technology Analyst wmgervasi@attbi.com

1

Introduction toDDR SDRAM

Bill Gervasi

Technology Analyst

[email protected]

Page 2: 1 Introduction to DDR SDRAM Bill Gervasi Technology Analyst wmgervasi@attbi.com

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Topics to Cover

• The SDRAM Roadmap

• Transitioning from SDR to DDR

• DDR-I 400 Overview

• Market overview

Page 3: 1 Introduction to DDR SDRAM Bill Gervasi Technology Analyst wmgervasi@attbi.com

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SDRAM Evolution

Simple,incrementalsteps

“DDR I”

“DDR II”

1100MB/s

PC133

DDR2662100MB/s DDR3332700MB/s DDR400

3200MB/s

1600MB/s

DDR200

“SDR”

DDR5334300MB/s

DDR400?

3200MB/s

MainstreamMemories

DDR6675400MB/s

Page 4: 1 Introduction to DDR SDRAM Bill Gervasi Technology Analyst wmgervasi@attbi.com

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Key to System Evolution• Never over-design!• Implement just enough new features to achieve

incremental improvements• Use low cost high volume infrastructure

– Processes– Packages– Printed circuit boards

Page 5: 1 Introduction to DDR SDRAM Bill Gervasi Technology Analyst wmgervasi@attbi.com

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From SDR to DDR

Signaling& Power

DifferentialClocks

DataStrobe

Prefetch2

WriteLatency

Prefetch2

Page 6: 1 Introduction to DDR SDRAM Bill Gervasi Technology Analyst wmgervasi@attbi.com

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Prefetch• Today’s SDRAM architectures assume an inexpensive DRAM

core timing

• DDR I (DDR200, DDR266, and DDR333) prefetches 2 data bits: increase performance without increasing core timing costs

• DDR II (DDR400, DDR533, DDR667) prefetches 4 bits internally, but keeps DDR double pumped I/O

• DDR-I 400 is a prefetch-2 architecture

Page 7: 1 Introduction to DDR SDRAM Bill Gervasi Technology Analyst wmgervasi@attbi.com

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Prefetch DepthCK

READ

Core access time

Costs $$$

Essentially free

dataSDR: Prefetch 1

DDR-I: Prefetch 2

DDR-II: Prefetch 4

Costs $$$

Column cycle time

Page 8: 1 Introduction to DDR SDRAM Bill Gervasi Technology Analyst wmgervasi@attbi.com

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Prefetch Impact on Cost

SDR

DDR-II

Pre-fetch

2

1

1

2

4

4

100

133

200

266

400

533

10 ns

7.5 ns

10 ns

7.5 ns

10 ns

7.5 ns

SDRAM Family

DataRate

CycleTime

Comparable to DDR266 in cost

DDR-I

2 333 6 ns

2 400 5 ns

Starts to get REAL EXPENSIVE!

High Yield =Affordable

Page 9: 1 Introduction to DDR SDRAM Bill Gervasi Technology Analyst wmgervasi@attbi.com

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DDR Data Timing• Data valid on rising & falling

edges… “Double Data Rate”• Source Synchronous; Data

Strobe “DQS” travels with data

Page 10: 1 Introduction to DDR SDRAM Bill Gervasi Technology Analyst wmgervasi@attbi.com

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From SDR to DDR

Signaling& Power

DifferentialClocks

DataStrobe

Prefetch2

WriteLatency

DifferentialClocks

Page 11: 1 Introduction to DDR SDRAM Bill Gervasi Technology Analyst wmgervasi@attbi.com

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DDR Clocks• Differential clocks on adjacent traces• Timing is relative to crosspoint• Helps ensure 50% duty cycle

Page 12: 1 Introduction to DDR SDRAM Bill Gervasi Technology Analyst wmgervasi@attbi.com

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Single Ended Clock

Clock high time

VREF

Clock low time

CK

Clock high time

VREF

Clock low time

CK

Normal balanced signal

Mismatched Rise & Fall signal Error!

Page 13: 1 Introduction to DDR SDRAM Bill Gervasi Technology Analyst wmgervasi@attbi.com

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Differential Clock

Significantly reduced symmetry error

Clockhigh time

Clock low time

CK

Clock high time

Clock low time

CK

Normal balanced signal

Mismatched Rise & Fall signal

CK

CK

Page 14: 1 Introduction to DDR SDRAM Bill Gervasi Technology Analyst wmgervasi@attbi.com

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From SDR to DDR

Signaling& Power

DifferentialClocks

DataStrobe

Prefetch2

WriteLatency

Signaling& Power

Page 15: 1 Introduction to DDR SDRAM Bill Gervasi Technology Analyst wmgervasi@attbi.com

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DDR Signaling• SSTL_2 low voltage swing inputs

– 2.5V I/O with 1.25V reference voltage– Low voltage swing with termination– Rail to rail if unterminated

Page 16: 1 Introduction to DDR SDRAM Bill Gervasi Technology Analyst wmgervasi@attbi.com

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Power = CV2f%#Factors:• Capacitance (C)• Voltage (V)• Frequency (f)• Duty cycle (%)• Power states

(# circuits in use)

Keys to lowpower design:

Reduce C and VMatch f to demandMinimize duty cycleUtilize power states

Page 17: 1 Introduction to DDR SDRAM Bill Gervasi Technology Analyst wmgervasi@attbi.com

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Power: SDR DDR-I DDR-II

0

2

4

6

8

10

12

Throughput per Second per Unit Power

PC-133@ 3.3V

DDR533@ 1.8V

DDR266@ 2.5V

Page 18: 1 Introduction to DDR SDRAM Bill Gervasi Technology Analyst wmgervasi@attbi.com

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From SDR to DDR

Signaling& Power

DifferentialClocks

DataStrobe

Prefetch2

WriteLatency

DataStrobe

Page 19: 1 Introduction to DDR SDRAM Bill Gervasi Technology Analyst wmgervasi@attbi.com

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Emphasis on “Matched”

• DM/DQS loading identical to DQ• Route as independent 8bit buses

DQ/DQS

DM

VREF

VREF

VREF

VREF

Disable

CONTROLLER DDR SDRAM

Page 20: 1 Introduction to DDR SDRAM Bill Gervasi Technology Analyst wmgervasi@attbi.com

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64 = 8 x 8• 64bit bus is 8 sync’ed 8bit buses• Allows external “copper” flexibility• 8 buses resync upon entry to FIFO

8 DQ1 DM1 DQS

8bit Buffer 8bit Buffer

8 DQ1 DM1 DQS

x16 DDRSDRAM

x16 DDRSDRAM

x16 DDRSDRAM

64bit Memory Controller Internal FIFOSync to

Controllerclock

Copperfrom

controllerto SDRAMs

InsideController

x16 DDRSDRAM

8 DQ1 DM1 DQS

Page 21: 1 Introduction to DDR SDRAM Bill Gervasi Technology Analyst wmgervasi@attbi.com

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From SDR to DDR

Signaling& Power

DifferentialClocks

DataStrobe

Prefetch2

WriteLatency

WriteLatency

Page 22: 1 Introduction to DDR SDRAM Bill Gervasi Technology Analyst wmgervasi@attbi.com

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Write Latency• SDR had to keep inputs powered all the time• Adding Write Latency to DDR allowed inputs to be

powered off between commands• Flexible timing differences on data and address paths

Page 23: 1 Introduction to DDR SDRAM Bill Gervasi Technology Analyst wmgervasi@attbi.com

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DDR-I vs DDR-II @ 400

“DDR I”

“DDR II”

DDR333

2700MB/sDDR400

3200MB/s

DDR400?

3200MB/s

Page 24: 1 Introduction to DDR SDRAM Bill Gervasi Technology Analyst wmgervasi@attbi.com

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DDR-I 400 Summary• DDR-I is hard to design to 400 MHz data rate

– Lower yields• No JEDEC standard

• Prefetch-2, 2.5V signals, TSOP packages, write latency 1

– DDR-II makes it a lot easier• JEDEC standards & focus

• Prefetch-4, 1.8V signals, differential strobe

• On-die termination, BGA packages, write latency > 1

• Same plane referencing

• Few suppliers supporting DDR-I 400 market

Page 25: 1 Introduction to DDR SDRAM Bill Gervasi Technology Analyst wmgervasi@attbi.com

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DDR-I 400 Conclusion• The JEDEC roadmap represents the industry

focus for mainstream products– DDR-I tops out at 333 MHz data rate– DDR-II starts at 400 MHz data rate

• This DOES NOT mean that DDR-I at 400 MHz data rate will not ship in volume

• It DOES mean that there will be price premiums for this speed bin

Page 26: 1 Introduction to DDR SDRAM Bill Gervasi Technology Analyst wmgervasi@attbi.com

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Market Outlook

• DDR-I– DDR333 is the mainstream product for 2003– DDR-I 400 will be the premium market

• DDR-II– DDR-II designs under way now– DDR-II 400 & 533 will sample in 2003– DDR-II ramp begins in 2004

Page 27: 1 Introduction to DDR SDRAM Bill Gervasi Technology Analyst wmgervasi@attbi.com

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Summary

• DDR has many improvements over SDR– Prefetch, differential clock, low voltage, data

strobe, write latency

• DDR-I 400 likely to stay a profitable niche• DDR-II volume products for 400 & 533 ramp

in 2004

Page 28: 1 Introduction to DDR SDRAM Bill Gervasi Technology Analyst wmgervasi@attbi.com

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Thank You