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SE-72-7797-L1 1
Sep. 25, 2012
Semiconductor Equipment Company
DAINIPPON SCREEN MFG. CO., LTD.
Improvements in Single Wafer Cleaning
Tool Performance
By Mark Goeke
Product Manager
Dainippon SCREEN (Deutschland) GmbH
SE-72-7797-L1 2
Headquarters: Kyoto, Japan
Foundation: Oct. 11, 1943
CEO: Akira Ishida
COO: Masahiro Hashimoto
Employees: 4,890(Consolidated)
2,089(Non-consolidated) (Fiscal year ended March 31, 2012)
Revenues: ¥ 250 billion (Consolidated)
¥ 216 billion(Non-consolidated) (Fiscal year ended March 31, 2012)
Dainippon SCREEN Mfg.Co.
White Canvas Rakusai
(Rakusai Plant)
Process Technology Center
(Hikone Plant)
Fab. FC-1, FC-2
(Hikone Plant) Taga Plant
13%
20%
67%
Media &
Precision Tech.
FPD Equipm.
Semi Equipm.
Other
SE-72-7797-L1 3
Introduction - Wafer Cleaning
Input Wafer
Wafer Cleaning (Pre-Treatment)
Oxidation CVD PVD
Lithography
Etch Ion Implantation
Resist Removal
Wafer Cleaning (Post-Treatment)
Output Wafer Source: T. Hattori, The Electrochem. Soc.
Proc., Vol. 97-35, p. 1, 1998.
SE-72-7797-L1 4
0
200
400
600
800
1,000
1,200
1,400
1,600
1,800
2,000
2,200
99 00 01 02 03 04 05 06 07 08 9 10 11 12F
13F
14F
15F
16F
Sale
s (
M$)
Auto wet stations
Single wafer
processors
Source: Gartner (September 2012)
Chart created by DAINIPPON SCREEN MFG.CO.,LTD. based on Gartner data.
Shift from Batch Cleaning to SWC
SWC Market surpassed Batch Cleaning Market in 2008
SE-72-7797-L1 5
Motivations for Shifting to SWC
Yield Enhancement by removing contaminants from wafer edge,
bevel and backside to avoid cross contamination [1]
More stringent requirements for wafer cleanliness with the need
to overcome limitation of batch immersion cleaning [1]
Possibility to use always fresh water and chemicals.
Industry trends for manufacturing and wet cleaning
– High-mix production environments, small lot size
– Short cycle time
– Flexibility to change cleaning sequence
[1] Takeshi Hattori, TechXPot © 2007
Wet Bench Spin
Processor
SE-72-7797-L1 6
History SWC tools
Wafer Size DRAM Integration (bit/chip)
Min Line Width (nm)
SU-3100
SS-3000
D-Spin636
SCW-421
8inch 6inch 5inch
256M 64M 16M 4M 1M 256k 64k
2000 1000 800 180 500
1G
90
300mm
4G
5000 45
16G 16k
1975 1980 1985 1990 1995 2000 2005 2011
350 130 65 22
SP-W813 SP-W612
SS-80BW-AR
SSW60A/80A
MP-3000
MP-2000
SR-2000
SR-3000
SU-3000
AS-2000
Φ300mm
~Φ200mm
SS-3100
2010
32
SU-3200
SE-72-7797-L1 7
300mm Cleaning Product Line-Up
Single Wafer Cleaning System SU-3200
Wet Station FC-3100
Scrubber
SS-3200 Single Wafer Cleaning System
SU-3100
Scrubber
SS-3100
SE-72-7797-L1 8
Surface Preparation Road Map
Year 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020
CMOS
DRAM
NAND
ITR
S
Diameter
(nm) 22.5 20 17.9 15.9 14.2 12.6 11.3 10 8.9 8 7.1
Count
(#/wafer) 113.3 113.3 113.3 113.3 113.3 113.3 113.3 113.3 113.3 113.3 113.3
SC
RE
EN
Ro
ad
ma
p
Diameter
(nm) 45 37 32 26 26 26 26 26 26 26 26
Count
(#/wafer) 28.3 33.1 35.5 42.4 33.8 26.6 21.4 16.8 13.3 10.7 8.4
DNS target
(#/wafer) 20 25 20 25 17 13 11 10 8 6 5
Measurement
tool
SCREEN
Cleaning tool
28nm 22nm 20nm 15nm 11nm 7nm 32nm
1Ynm 2Xnm 2Ynm / 1Xnm
2Xnm 1Xnm 1Ynm / 3D 3D
SU-3100 SU-3200 SU-3200 / SU-3X
SP2 SP3
SE-72-7797-L1 9 9
Areas of Improvement
Productivity
Maintenance ECO Friendly
High Productivity: 336%up* • Throughput 800wph
• Max throughput for footprint
• Small footprint * per sqm, Process HF-APM-HPM-CO2w
CoO reduction • Chemical usage : 80% down
• N2 usage : 62% down
• Exaust usage : 50% down
Minimum PM Time • Down time reduction
• Improved service workability
Process stability
New drying • Drying performance upgrade
Clean chamber • Improved atmosphere & exhaust control
SE-72-7797-L1 10
Productivity Improvement (1/2)
DDI Booster SC
Chemical SC Power box
SU-3200 SU-3100
Power
Box
Chemical
cabinet
Chemical
cabinet
2 stories
3 stories
Process chambers
– 12 process chambers in 3 decks
All in One
– Std. chemical cabinets (except for special chemicals and units
such as Hot-DIW, O3, cooling unit) attached to mainbody
SE-72-7797-L1 11 11
Throughput Comparison
WPH Curve (SU3100 vs SU3200)
0.0
100.0
200.0
300.0
400.0
500.0
600.0
700.0
800.0
114 30 60 90 120 150 180 210 240 270 300
Process Time [ sec ]
Th
rou
gh
pu
t [ W
PH
]
SU3100
SU3200 Normal
SU3200 High WPH
SE-72-7797-L1 12
High Throughput
12 chambers + high-speed transfer system + small footprint
= Productivity Improvement
SU3100 SU3200
Main Body 10.9 11.5
Other 6.5 2.3
Total 17.4 13.8
Max throughput for footprint
* Footprint comparison example: HF-APM-HPM-CO2
Max throughput for footprint
176%
SU-3100
SU-3200
300wph 420wph (Standard model)
800wph (HTP model)
Pro
duct
ivity
(TP
/m2)
336% Throughput per Footprint
SE-72-7797-L1 13
Productivity Improvement (2/2)
Possible maintain one chamber tower, while keeping the
others operative - Isolation structure
– Reducing downtime
– Possible to do maintenance with minimum impact to production
Tower1
Tower2
Tower3
Tower4 1 tower
(3 chambers)
– Spin chuck
– Nozzle
– Fluid valve
– Flow meter
– Flow controller
– Electric parts
+
SU-3200 maintenance efficiency improvement
SU-3100
12 chambers
SE-72-7797-L1 14
Chemical Consumption Reduction
Chemical flow rate reduction with new flow controller
Chemical Reduction
TOP SIDE DISPENSE [ Max / Min ] SC1 (1:8:60) SC2 (1:1:5) SC2 (1:1:50)
SU3100
Total flow rate [ml/min] 2000 / 1600 2000 / 1600 2000 / 1600
Chemical flow rate
[ml/min]
H2O2 232 / 186 H2O2 286 / 229 H2O2 77 / 62
NH4OH 29 / 23 HCL 286 / 229 HCL 77 / 62
SU3200
Total flow rate [ml/min] 850 / 500 700 / 500 812 / 650
Chemical flow rate
[ml/min]
H2O2 99 / 58 H2O2 100 / 71 H2O2 38 / 31
NH4OH 12 / 7 HCL 100 / 71 HCL 38 / 31
HCL
0.00
0.02
0.04
0.06
SU-3100 SU-3200
Com
sum
ptio
n to
1 w
afer
(L)
80%down
NH4OH
0.00
0.01
0.02
0.03
0.04
0.05
SU-3100 SU-3200
Com
sum
ptio
n t
o 1
waf
er(
L)
75%down
H2O2
0.00
0.05
0.10
0.15
SU-3100 SU-3200
Com
sum
ptio
n t
o 1
waf
er(
L)
69%down
SC1/SC1Nanospray/SC2 SC1 30s, 1:2:80, 60C,
SC1 Nanospray 32s, N2:35L/min
SC2 15s, 1:1:20, 60C
SE-72-7797-L1 15
Nitrogen & Exhaust Consumption
Consumption comparison of N2/exhaust per a
wafer processing
SC1/SC1Nanospray/SC2
N2*
0
200
400
600
SU-3100 SU-3200
N2 c
om
sum
ptio
n p
er
waf
er(
L) Exhaust*
0
2
4
6
8
SU-3100 SU-3200
Exh
aust
cham
ber(
m3/m
in)
62%down 50%down
*N2: include not only N2 used in process step but also spin axis relative with chamber
*Exhaust: includes incidental unit (E-flow, Chemical cabinet, fluid unit) and transfer area,
and they were calculated as a value per chamber
SE-72-7797-L1 16
“APAC” Super Clean Technology
Advanced Mini Chamber Reduce chamber volume
(Chamber volume is 1/3)
Air Balanced Guide Optimize airflow in chamber with
newly-developed AB guide
Air Stopper Board Superior atmosphere control in
chamber with ASB installation
Air Exhaust Ring Improve atmosphere substitution in
chamber with AER installation.
Advanced Splash Protection Achieve process in clean
environment,
with minimizing chemical splash
during processing.
Air Protection Nozzle Install APN, new dry technology,
used SCREEN original air
protect technology.
APAC: Advanced Process Atmosphere Control
SE-72-7797-L1 17
Improved Atmosphere Substitution
Bottle: 1:1 NH4OH water, 30ml
Measured point Exhaust: 3.3m3/min
Initial concentration value:
Saturated value after bottle open
NH3 atmosphere replacement capability (port0)
SE-72-7797-L1 18
Performance Data
0.00E+00
2.00E-02
4.00E-02
6.00E-02
8.00E-02
1.00E-01
0 10 20 30 40 50
Particle Count
Pro
ba
bili
ty D
en
sity
0
20
40
60
80
100
Pa
rtic
le C
ou
nt
SU3100SU3200
0.00E+00
2.00E-02
4.00E-02
6.00E-02
8.00E-02
1.00E-01
0 50 100 150 200
Particle Count
Pro
ba
bili
ty D
en
sity
0
50
100
150
200
250
Pa
rtic
le C
ou
nt
SU3100SU3200
O3-HF-IPA O3-HF-SC1-SC1_Nano2-SC2
N=50 N=50
Improved performance
compared to previous model
SU-3100
Particle stability @ 45nm
Etching uniformity
0.00E+00
1.00E+00
2.00E+00
3.00E+00
4.00E+00
5.00E+00
6.00E+00
7.00E+00
8.00E+00
0 1 2 3
Etching uniformity (%)
Pro
ba
bili
ty D
en
sity
0
1
2
3
4
5
6
7
8E
tch
ing
un
ifo
rmity (
%)
SU3100SU3200
N=72
SE-72-7797-L1 19 19
Drying Technologies
SE-72-7797-L1 20 20
Drying Roadmap
Year 2012 2013 2014 2015 2016 2017 2018 2019
Technology
node
Drying
• Drying without FIN-FET Collapse
Planar Si,SiGe Non-Planar Si,SiGe
28nm 22nm 20nm 15nm 11nm 7nm
Ⅲ-ⅤNon-Planar Vdd-0.3V Ⅲ-Ⅴ
Tunnel-FET
N2 Drying IPA Drying New Drying
• HKMG metallic
contamination control
• IPA Dry / Nanodry1/2
Map source:SEMATECH
CMOS
DRAM NAND Scaling 3D NAND
• Drying without cylinder collapse • Drying without pattern
collapse
NAND
AR14 AR16 AR18 AR20< 3D
28nm 25nm 20nm 15nm 11nm 7nm
SE-72-7797-L1 21 21
Drying Technology Evolution SU-3100 SU-3200
Drying with shield plate Drying with APN(Air Protect Nozzle)
wafer
N2 supply (by side slit)
IPA supply
N2 shield
AP nozzle
Particle or mist N2 supply IPA supply
N2 shield Shield plate
HF/IPA dry
3100 3200
STI Etching wafer
WM:0ea WM:0ea
SiGe Etching wafer Watermark Particle
SE-72-7797-L1 22
Summary
High Productivity
– 12 process chambers
– New high speed robotics
– Maintainability
Reduced Cost of Ownership
– Reduced chemical consumption
– Lower utility consumption (exhaust & N2) by
accelerated chamber atmosphere
substitution
Improved process performance
– Cleanliness
– Etching uniformity
– Implementation of new drying techniques
Recommended