SE-72-7797-L1 1

Sep. 25, 2012

Semiconductor Equipment Company

DAINIPPON SCREEN MFG. CO., LTD.

Improvements in Single Wafer Cleaning

Tool Performance

By Mark Goeke

Product Manager

Dainippon SCREEN (Deutschland) GmbH

SE-72-7797-L1 2

Headquarters： Kyoto, Japan

Foundation： Oct. 11, 1943

CEO： Akira Ishida

COO： Masahiro Hashimoto

Employees： 4,890（Consolidated）

2,089（Non-consolidated） (Fiscal year ended March 31, 2012）

Revenues： ¥ 250 billion （Consolidated）

¥ 216 billion（Non-consolidated） (Fiscal year ended March 31, 2012）

Dainippon SCREEN Mfg.Co.

White Canvas Rakusai

（Rakusai Plant)

Process Technology Center

（Hikone Plant)

Fab. FC-1, FC-2

（Hikone Plant) Taga Plant

13%

20%

67%

Media &

Precision Tech.

FPD Equipm.

Semi Equipm.

Other

SE-72-7797-L1 3

Introduction - Wafer Cleaning

Input Wafer

Wafer Cleaning (Pre-Treatment)

Oxidation CVD PVD

Lithography

Etch Ion Implantation

Resist Removal

Wafer Cleaning (Post-Treatment)

Output Wafer Source: T. Hattori, The Electrochem. Soc.

Proc., Vol. 97-35, p. 1, 1998.

SE-72-7797-L1 4

0

200

400

600

800

1,000

1,200

1,400

1,600

1,800

2,000

2,200

99 00 01 02 03 04 05 06 07 08 9 10 11 12F

13F

14F

15F

16F

Sale

s (

M$)

Auto wet stations

Single wafer

processors

Source: Gartner (September 2012)

Chart created by DAINIPPON SCREEN MFG.CO.,LTD. based on Gartner data.

Shift from Batch Cleaning to SWC

SWC Market surpassed Batch Cleaning Market in 2008

SE-72-7797-L1 5

Motivations for Shifting to SWC

Yield Enhancement by removing contaminants from wafer edge,

bevel and backside to avoid cross contamination [1]

More stringent requirements for wafer cleanliness with the need

to overcome limitation of batch immersion cleaning [1]

Possibility to use always fresh water and chemicals.

Industry trends for manufacturing and wet cleaning

– High-mix production environments, small lot size

– Short cycle time

– Flexibility to change cleaning sequence

[1] Takeshi Hattori, TechXPot © 2007

Wet Bench Spin

Processor

SE-72-7797-L1 6

History SWC tools

Wafer Size DRAM Integration (bit/chip)

Min Line Width (nm)

SU-3100

SS-3000

D-Spin636

SCW-421

8inch 6inch 5inch

256M 64M 16M 4M 1M 256k 64k

2000 1000 800 180 500

1G

90

300mm

4G

5000 45

16G 16k

1975 1980 1985 1990 1995 2000 2005 2011

350 130 65 22

SP-W813 SP-W612

SS-80BW-AR

SSW60A/80A

MP-3000

MP-2000

SR-2000

SR-3000

SU-3000

AS-2000

Φ300mm

～Φ200mm

SS-3100

2010

32

SU-3200

SE-72-7797-L1 7

300mm Cleaning Product Line-Up

Single Wafer Cleaning System SU-3200

Wet Station FC-3100

Scrubber

SS-3200 Single Wafer Cleaning System

SU-3100

Scrubber

SS-3100

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Surface Preparation Road Map

Year 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020

CMOS

DRAM

NAND

ITR

S

Diameter

(nm) 22.5 20 17.9 15.9 14.2 12.6 11.3 10 8.9 8 7.1

Count

(#/wafer) 113.3 113.3 113.3 113.3 113.3 113.3 113.3 113.3 113.3 113.3 113.3

SC

RE

EN

Ro

ad

ma

p

Diameter

(nm) 45 37 32 26 26 26 26 26 26 26 26

Count

(#/wafer) 28.3 33.1 35.5 42.4 33.8 26.6 21.4 16.8 13.3 10.7 8.4

DNS target

(#/wafer) 20 25 20 25 17 13 11 10 8 6 5

Measurement

tool

SCREEN

Cleaning tool

28nm 22nm 20nm 15nm 11nm 7nm 32nm

1Ynm 2Xnm 2Ynm / 1Xnm

2Xnm 1Xnm 1Ynm / 3D 3D

SU-3100 SU-3200 SU-3200 / SU-3X

SP2 SP3

SE-72-7797-L1 9 9

Areas of Improvement

Productivity

Maintenance ECO Friendly

High Productivity: 336%up* • Throughput 800wph

• Max throughput for footprint

• Small footprint * per sqm, Process HF-APM-HPM-CO2w

CoO reduction • Chemical usage : 80% down

• N2 usage : 62% down

• Exaust usage : 50% down

Minimum PM Time • Down time reduction

• Improved service workability

Process stability

New drying • Drying performance upgrade

Clean chamber • Improved atmosphere & exhaust control

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Productivity Improvement (1/2)

DDI Booster SC

Chemical SC Power box

SU-3200 SU-3100

Power

Box

Chemical

cabinet

Chemical

cabinet

2 stories

3 stories

Process chambers

– 12 process chambers in 3 decks

All in One

– Std. chemical cabinets (except for special chemicals and units

such as Hot-DIW, O3, cooling unit) attached to mainbody

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Throughput Comparison

WPH Curve (SU3100 vs SU3200)

0.0

100.0

200.0

300.0

400.0

500.0

600.0

700.0

800.0

114 30 60 90 120 150 180 210 240 270 300

Process Time [ sec ]

Th

rou

gh

pu

t [ W

PH

]

SU3100

SU3200 Normal

SU3200 High WPH

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High Throughput

12 chambers + high-speed transfer system + small footprint

= Productivity Improvement

SU3100 SU3200

Main Body 10.9 11.5

Other 6.5 2.3

Total 17.4 13.8

Max throughput for footprint

* Footprint comparison example: HF-APM-HPM-CO2

Max throughput for footprint

176%

SU-3100

SU-3200

300wph 420wph (Standard model)

800wph (HTP model)

Pro

duct

ivity

(TP

/m2)

336% Throughput per Footprint

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Productivity Improvement (2/2)

Possible maintain one chamber tower, while keeping the

others operative - Isolation structure

– Reducing downtime

– Possible to do maintenance with minimum impact to production

Tower1

Tower2

Tower3

Tower4 1 tower

(3 chambers)

– Spin chuck

– Nozzle

– Fluid valve

– Flow meter

– Flow controller

– Electric parts

+

SU-3200 maintenance efficiency improvement

SU-3100

12 chambers

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Chemical Consumption Reduction

Chemical flow rate reduction with new flow controller

Chemical Reduction

TOP SIDE DISPENSE [ Max / Min ] SC1 (1:8:60) SC2 (1:1:5) SC2 (1:1:50)

SU3100

Total flow rate [ml/min] 2000 / 1600 2000 / 1600 2000 / 1600

Chemical flow rate

[ml/min]

H2O2 232 / 186 H2O2 286 / 229 H2O2 77 / 62

NH4OH 29 / 23 HCL 286 / 229 HCL 77 / 62

SU3200

Total flow rate [ml/min] 850 / 500 700 / 500 812 / 650

Chemical flow rate

[ml/min]

H2O2 99 / 58 H2O2 100 / 71 H2O2 38 / 31

NH4OH 12 / 7 HCL 100 / 71 HCL 38 / 31

HCL

0.00

0.02

0.04

0.06

SU-3100 SU-3200

Com

sum

ptio

n to

1 w

afer

(L)

80%down

NH4OH

0.00

0.01

0.02

0.03

0.04

0.05

SU-3100 SU-3200

Com

sum

ptio

n t

o 1

waf

er(

L)

75%down

H2O2

0.00

0.05

0.10

0.15

SU-3100 SU-3200

Com

sum

ptio

n t

o 1

waf

er(

L)

69%down

SC1/SC1Nanospray/SC2 SC1 30s, 1:2:80, 60C,

SC1 Nanospray 32s, N2:35L/min

SC2 15s, 1:1:20, 60C

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Nitrogen & Exhaust Consumption

Consumption comparison of N2/exhaust per a

wafer processing

SC1/SC1Nanospray/SC2

N2*

0

200

400

600

SU-3100 SU-3200

N2 c

om

sum

ptio

n p

er

waf

er(

L) Exhaust*

0

2

4

6

8

SU-3100 SU-3200

Exh

aust

cham

ber(

m3/m

in)

62%down 50%down

*N2: include not only N2 used in process step but also spin axis relative with chamber

*Exhaust: includes incidental unit (E-flow, Chemical cabinet, fluid unit) and transfer area,

and they were calculated as a value per chamber

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“APAC” Super Clean Technology

Advanced Mini Chamber Reduce chamber volume

(Chamber volume is 1/3)

Air Balanced Guide Optimize airflow in chamber with

newly-developed AB guide

Air Stopper Board Superior atmosphere control in

chamber with ASB installation

Air Exhaust Ring Improve atmosphere substitution in

chamber with AER installation.

Advanced Splash Protection Achieve process in clean

environment,

with minimizing chemical splash

during processing.

Air Protection Nozzle Install APN, new dry technology,

used SCREEN original air

protect technology.

APAC: Advanced Process Atmosphere Control

SE-72-7797-L1 17

Improved Atmosphere Substitution

Bottle: 1:1 NH4OH water, 30ml

Measured point Exhaust: 3.3m3/min

Initial concentration value:

Saturated value after bottle open

NH3 atmosphere replacement capability (port0)

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Performance Data

0.00E+00

2.00E-02

4.00E-02

6.00E-02

8.00E-02

1.00E-01

0 10 20 30 40 50

Particle Count

Pro

ba

bili

ty D

en

sity

0

20

40

60

80

100

Pa

rtic

le C

ou

nt

SU3100SU3200

0.00E+00

2.00E-02

4.00E-02

6.00E-02

8.00E-02

1.00E-01

0 50 100 150 200

Particle Count

Pro

ba

bili

ty D

en

sity

0

50

100

150

200

250

Pa

rtic

le C

ou

nt

SU3100SU3200

O3-HF-IPA O3-HF-SC1-SC1_Nano2-SC2

N=50 N=50

Improved performance

compared to previous model

SU-3100

Particle stability @ 45nm

Etching uniformity

0.00E+00

1.00E+00

2.00E+00

3.00E+00

4.00E+00

5.00E+00

6.00E+00

7.00E+00

8.00E+00

0 1 2 3

Etching uniformity (%)

Pro

ba

bili

ty D

en

sity

0

1

2

3

4

5

6

7

8E

tch

ing

un

ifo

rmity (

%)

SU3100SU3200

N=72

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Drying Technologies

SE-72-7797-L1 20 20

Drying Roadmap

Year 2012 2013 2014 2015 2016 2017 2018 2019

Technology

node

Drying

• Drying without FIN-FET Collapse

Planar Si,SiGe Non-Planar Si,SiGe

28nm 22nm 20nm 15nm 11nm 7nm

Ⅲ-ⅤNon-Planar Vdd-0.3V Ⅲ-Ⅴ

Tunnel-FET

N2 Drying IPA Drying New Drying

• HKMG metallic

contamination control

• IPA Dry / Nanodry1/2

Map source:SEMATECH

CMOS

DRAM NAND Scaling 3D NAND

• Drying without cylinder collapse • Drying without pattern

collapse

NAND

AR14 AR16 AR18 AR20< 3D

28nm 25nm 20nm 15nm 11nm 7nm

SE-72-7797-L1 21 21

Drying Technology Evolution SU-3100 SU-3200

Drying with shield plate Drying with APN(Air Protect Nozzle)

wafer

N2 supply (by side slit)

IPA supply

N2 shield

AP nozzle

Particle or mist N2 supply IPA supply

N2 shield Shield plate

HF/IPA dry

3100 3200

STI Etching wafer

WM:0ea WM:0ea

SiGe Etching wafer Watermark Particle

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Summary

High Productivity

– 12 process chambers

– New high speed robotics

– Maintainability

Reduced Cost of Ownership

– Reduced chemical consumption

– Lower utility consumption (exhaust & N2) by

accelerated chamber atmosphere

substitution

Improved process performance

– Cleanliness

– Etching uniformity

– Implementation of new drying techniques