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Inverter IGBT
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IKW40T120TrenchStop Series
IFAG IPV TD VLS 1 Rev. 2.3 12.03.2013
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft,fast recovery anti-parallel Emitter Controlled HE diode
Best in class TO247 Short circuit withstand time 10s Designed for :
- Frequency Converters- Uninterrupted Power Supply
TrenchStop and Fieldstop technology for 1200 V applicationsoffers :
- very tight parameter distribution- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due topositive temperature coefficient in VCE(sat)
Low EMI Low Gate Charge Very soft, fast recovery anti-parallel Emitter Controlled HE diode Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type VCE IC VCE(sat),Tj=25C Tj,max Marking Code Package
IKW40T120 1200V 40A 1.7V 150C K40T120 PG-TO-247-3
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VC E 1200 VDC collector currentTC = 25CTC = 100C
IC7540
A
Pulsed collector current, tp limited by Tjmax IC p u l s 105Turn off safe operating areaVCE 1200V, Tj 150C
- 105
Diode forward currentTC = 25CTC = 100C
IF8040
Diode pulsed current, tp limited by Tjmax IF p u l s 105Gate-emitter voltage VG E 20 V
Short circuit withstand time2)
VGE = 15V, VCC 1200V, Tj 150CtS C 10 s
Power dissipationTC = 25C
P t o t 270 W
Operating junction temperature T j -40...+150 CStorage temperature T s t g -55...+150
1 J-STD-020 and JESD-0222) Allowed number of short circuits: 1s.
PG-TO-247-3
G
C
E
IKW40T120TrenchStop Series
IFAG IPV TD VLS 2 Rev. 2.3 12.03.2013
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
IKW40T120TrenchStop Series
IFAG IPV TD VLS 3 Rev. 2.3 12.03.2013
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
CharacteristicIGBT thermal resistance,junction case
R t h J C 0.45 K/W
Diode thermal resistance,junction case
R t h J C D 0.81
Thermal resistance,junction ambient
R t h J A 40
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter Symbol ConditionsValue
Unitmin. typ. max.
Static CharacteristicCollector-emitter breakdown voltage V ( B R ) C E S VG E=0V, IC=1.5mA 1200 - - VCollector-emitter saturation voltage VC E ( s a t ) VG E = 15V, IC=40A
T j=25CT j=125CT j=150C
---
1.72.12.3
2.3--
Diode forward voltage VF VG E=0V, IF=40AT j=25CT j=125CT j=150C
---
1.751.751.75
2.3--
Gate-emitter threshold voltage VG E ( t h ) IC=1.5mA,VC E=VG E 5.0 5.8 6.5Zero gate voltage collector current IC E S VC E=1200V ,
VG E=0VT j=25CT j=150C
--
--
0.44.0
mA
Gate-emitter leakage current IG E S VC E=0V,VG E=20V - - 600 nATransconductance g f s VC E=20V, IC=40A - 21 - SIntegrated gate resistor RG i n t 6
IKW40T120TrenchStop Series
IFAG IPV TD VLS 4 Rev. 2.3 12.03.2013
Dynamic CharacteristicInput capacitance C i s s VC E=25V,
VG E=0V,f=1MHz
- 2500 - pFOutput capacitance Co s s - 130 -Reverse transfer capacitance C r s s - 110 -Gate charge QG a t e VC C=960V, IC=40A
VG E=15V- 203 - nC
Internal emitter inductancemeasured 5mm (0.197 in.) from case
LE - 13 - nH
Short circuit collector current1) IC ( S C ) VG E=15V, tS C10sVC C = 600V,T j = 25C
- 210 - A
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter Symbol ConditionsValue
Unitmin. typ. max.
IGBT CharacteristicTurn-on delay time td ( o n ) T j=25C,
VC C=600V, IC=40A,VG E=0/15V,RG=15 ,L
2 )=180nH,C
2 )=39pFEnergy losses includetail and diodereverse recovery.
- 48 - nsRise time t r - 34 -Turn-off delay time td ( o f f ) - 480 -Fall time t f - 70 -Turn-on energy Eo n - 3.3 - mJTurn-off energy Eo f f - 3.2 -Total switching energy E t s - 6.5 -Anti-Parallel Diode CharacteristicDiode reverse recovery time t r r T j=25C,
VR=600V, IF=40A,diF /d t=800A/s
- 240 - nsDiode reverse recovery charge Q r r - 3.8 CDiode peak reverse recovery current I r r m - 28 ADiode peak rate of fall of reverserecovery current during tb
di r r /d t - 370 - A/s
1) Allowed number of short circuits: 1s.2) Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E.
IKW40T120TrenchStop Series
IFAG IPV TD VLS 5 Rev. 2.3 12.03.2013
Switching Characteristic, Inductive Load, at Tj=150 C
Parameter Symbol ConditionsValue
Unitmin. typ. max.
IGBT CharacteristicTurn-on delay time td ( o n ) T j=150C
VC C=600V, IC=40A,VG E=0/15V,RG= 15 ,L
1 )=180nH,C
1 )=39pFEnergy losses includetail and diodereverse recovery.
- 52 - nsRise time t r - 40 -Turn-off delay time td ( o f f ) - 580 -Fall time t f - 120 -Turn-on energy Eo n - 5.0 - mJTurn-off energy Eo f f - 5.4 -Total switching energy E t s - 10.4 -Anti-Parallel Diode CharacteristicDiode reverse recovery time t r r T j=150C
VR=600V, IF=40A,diF /d t=800A/s
- 410 - nsDiode reverse recovery charge Q r r - 8.8 - CDiode peak reverse recovery current I r r m - 36 - ADiode peak rate of fall of reverserecovery current during tb
di r r /d t - 330 A/s
1) Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E.
IKW40T120TrenchStop Series
IFAG IPV TD VLS 6 Rev. 2.3 12.03.2013
I C
,CO
LLE
CTO
RC
UR
RE
NT
10Hz 100Hz 1kHz 10kHz 100kHz0A
20A
40A
60A
80A
100A
TC=110C
TC=80C
I C,C
OLL
EC
TOR
CU
RR
EN
T
1V 10V 100V 1000V0,1A
1A
10A
100A
DC
10s
tp=3s
50s
500s
20ms
150s
f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGEFigure 1. Collector current as a function of
switching frequency(Tj 150C, D = 0.5, VCE = 600V,VGE = 0/+15V, RG = 15)
Figure 2. Safe operating area(D = 0, TC = 25C,Tj 150C;VGE=15V)
Pto
t,P
OW
ER
DIS
SIPA
TIO
N
25C 50C 75C 100C 125C0W
50W
100W
150W
200W
250W
I C,C
OLL
EC
TOR
CU
RR
EN
T
25C 75C 125C0A
10A
20A
30A
40A
50A
60A
70A
TC, CASE TEMPERATURE TC, CASE TEMPERATUREFigure 3. Power dissipation as a function of
case temperature(Tj 150C)
Figure 4. Collector current as a function ofcase temperature(VGE 15V, Tj 150C)
Ic
Ic
IKW40T120TrenchStop Series
IFAG IPV TD VLS 7 Rev. 2.3 12.03.2013
I C
,CO
LLE
CTO
RC
UR
RE
NT
0V 1V 2V 3V 4V 5V 6V0A
10A
20A
30A
40A
50A
60A
70A
80A
90A
100A
15V
7V
9V
11V
13V
VGE=17V
I C,C
OLL
EC
TOR
CU
RR
EN
T
0V 1V 2V 3V 4V 5V 6V0A
10A
20A
30A
40A
50A
60A
70A
80A
90A
100A
15V
7V
9V
11V
13V
VGE=17V
VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGEFigure 5. Typical output characteristic
(Tj = 25C)Figure 6. Typical output characteristic
(Tj = 150C)
I C,C
OLL
EC
TOR
CU
RR
EN
T
0V 2V 4V 6V 8V 10V 12V0A
10A
20A
30A
40A
50A
60A
70A
80A
90A
100A
25CTJ=150C
VC
E(sa
t),C
OLL
EC
TOR
-EM
ITT
SAT
UR
ATI
ON
VO
LTA
GE
-50C 0C 50C 100C0,0V
0,5V
1,0V
1,5V
2,0V
2,5V
3,0V
3,5V
IC=40A
IC=80A
IC=25A
IC=10A
VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATUREFigure 7. Typical transfer characteristic
(VCE=20V)Figure 8. Typical collector-emitter
saturation voltage as a function ofjunction temperature(VGE = 15V)
IKW40T120TrenchStop Series
IFAG IPV TD VLS 8 Rev. 2.3 12.03.2013
t,
SW
ITC
HIN
GTI
MES
0A 20A 40A 60A1ns
10ns
100ns
tr
td(on)
tf
td(off)
t,S
WIT
CH
ING
TIM
ES
1 ns
10 ns
100 ns
1000 ns
tf
tr
td(off)
td(on)
IC, COLLECTOR CURRENT RG, GATE RESISTORFigure 9. Typical switching times as a
function of collector current(inductive load, TJ=150C,VCE=600V, VGE=0/15V, RG=15, Dynamic test circuit in Figure E)
Figure 10. Typical switching times as afunction of gate resistor(inductive load, TJ=150C,VCE=600V, VGE=0/15V, IC=40A,Dynamic test circuit in Figure E)
t,S
WIT
CH
ING
TIM
ES
0C 50C 100C 150C10ns
100ns
tr
tf
td(on)
td(off)
VG
E(th
),G
ATE
-EM
ITT
TRS
HO
LDV
OLT
AGE
-50C 0C 50C 100C 150C0V
1V
2V
3V
4V
5V
6V
7V
min.
typ.
max.
TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATUREFigure 11. Typical switching times as a
function of junction temperature(inductive load, VCE=600V,VGE=0/15V, IC=40A, RG=15, Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage asa function of junction temperature(IC = 1.5mA)
IKW40T120TrenchStop Series
IFAG IPV TD VLS 9 Rev. 2.3 12.03.2013
E
,SW
ITC
HIN
GE
NE
RG
YLO
SSE
S
10A 20A 30A 40A 50A 60A 70A0,0mJ
5,0mJ
10,0mJ
15,0mJ
20,0mJ
25,0mJ
Ets*
Eoff
*) Eon and Etsinclude lossesdue to diode recovery
Eon*
E,S
WIT
CH
ING
EN
ER
GY
LOS
SES
0 mJ
5 mJ
10 mJ
15 mJ Ets*
Eon*
*) Eon and Ets include lossesdue to diode recovery
Eoff
IC, COLLECTOR CURRENT RG, GATE RESISTORFigure 13. Typical switching energy losses
as a function of collector current(inductive load, TJ=150C,VCE=600V, VGE=0/15V, RG=15, Dynamic test circuit in Figure E)
Figure 14. Typical switching energy lossesas a function of gate resistor(inductive load, TJ=150C,VCE=600V, VGE=0/15V, IC=40A,Dynamic test circuit in Figure E)
E,S
WIT
CH
ING
EN
ER
GY
LOS
SES
50C 100C 150C0mJ
5mJ
10mJ
15mJ
Ets*
Eon*
*) Eon and Ets include lossesdue to diode recovery
Eoff
E,S
WIT
CH
ING
EN
ER
GY
LOS
SES
400V 500V 600V 700V 800V0mJ
5mJ
10mJ
15mJ
Ets*
Eon*
*) Eon and Ets include lossesdue to diode recovery
Eoff
TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGEFigure 15. Typical switching energy losses
as a function of junctiontemperature(inductive load, VCE=600V,VGE=0/15V, IC=40A, RG=15, Dynamic test circuit in Figure E)
Figure 16. Typical switching energy lossesas a function of collector emittervoltage(inductive load, TJ=150C,VGE=0/15V, IC=40A, RG=15, Dynamic test circuit in Figure E)
IKW40T120TrenchStop Series
IFAG IPV TD VLS 10 Rev. 2.3 12.03.2013
V
GE,G
ATE
-EM
ITTE
RV
OLT
AG
E
0nC 50nC 100nC 150nC 200nC 250nC0V
5V
10V
15V
960V240V
c,C
AP
AC
ITA
NC
E
0V 10V 20V10pF
100pF
1nF
Crss
Coss
Ciss
QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGEFigure 17. Typical gate charge
(IC=40 A)Figure 18. Typical capacitance as a function
of collector-emitter voltage(VGE=0V, f = 1 MHz)
t SC,S
HO
RT
CIR
CU
ITW
ITH
STA
ND
TIM
E
12V 14V 16V0s
5s
10s
15s
I C(s
c),s
hort
circ
uitC
OLL
EC
TOR
CU
RR
EN
T
12V 14V 16V 18V0A
100A
200A
300A
VGE, GATE-EMITTETR VOLTAGE VGE, GATE-EMITTETR VOLTAGEFigure 19. Short circuit withstand time as a
function of gate-emitter voltage(VCE=600V, start at TJ=25C)
Figure 20. Typical short circuit collectorcurrent as a function of gate-emitter voltage(VCE 600V, Tj 150C)
IKW40T120TrenchStop Series
IFAG IPV TD VLS 11 Rev. 2.3 12.03.2013
V C
E,C
OLL
EC
TOR
-EM
ITTE
RV
OLT
AG
E
0V
200V
400V
600V
0A
20A
40A
60A
1.5us1us0.5us0us
IC
VCE
I C,C
OLL
EC
TOR
CU
RR
EN
T
0V
200V
400V
600V
0A
20A
40A
60A
1.5us1us0.5us0us
IC
VCE
t, TIME t, TIMEFigure 21. Typical turn on behavior
(VGE=0/15V, RG=15, Tj = 150C,Dynamic test circuit in Figure E)
Figure 22. Typical turn off behavior(VGE=15/0V, RG=15, Tj = 150C,Dynamic test circuit in Figure E)
Z thJ
C,T
RA
NS
IEN
TTH
ER
MA
LR
ESI
STA
NC
E
10s 100s 1ms 10ms 100ms10-3K/W
10-2K/W
10-1K/W
single pulse0.010.02
0.05
0.1
0.2
D=0.5
Z thJ
C,T
RA
NS
IEN
TTH
ER
MA
LR
ESI
STA
NC
E
10s 100s 1ms 10ms 100ms10-3K/W
10-2K/W
10-1K/W
single pulse0.010.02
0.05
0.1
0.2
D=0.5
tP, PULSE WIDTH tP, PULSE WIDTHFigure 23. IGBT transient thermal resistance
(D = tp / T)Figure 24. Diode transient thermal
impedance as a function of pulsewidth(D=tP/T)
R , ( K / W ) , ( s ) 0.159 1.10*10-1
0.133 1.56*10-2
0.120 1.35*10-3
0.038 1.51*10-4
C 1=1 /R 1
R 1 R2
C 2=2 /R 2
R , ( K / W ) , ( s ) 0.228 1.01*10-1
0.257 1.15*10-2
0.238 1.30*10-3
0.087 1.53*10-4
C 1=1 /R 1
R 1 R2
C 2=2 /R 2
IKW40T120TrenchStop Series
IFAG IPV TD VLS 12 Rev. 2.3 12.03.2013
t rr
,RE
VE
RSE
RE
CO
VER
YTI
ME
400A/s 600A/s 800A/s 1000A/s0ns
100ns
200ns
300ns
400ns
500ns
600ns
TJ=25C
TJ=150C
Qrr,R
EV
ER
SE
RE
CO
VE
RY
CH
ARG
E
400A/s 600A/s 800A/s 1000A/s0C
2C
4C
6C
8C
TJ=25C
TJ=150C
diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPEFigure 23. Typical reverse recovery time as
a function of diode current slope(VR=600V, IF=40A,Dynamic test circuit in Figure E)
Figure 24. Typical reverse recovery chargeas a function of diode currentslope(VR=600V, IF=40A,Dynamic test circuit in Figure E)
I rr,R
EV
ER
SE
RE
CO
VE
RY
CU
RR
EN
T
400A/s 600A/s 800A/s 1000A/s0A
5A
10A
15A
20A
25A
30A
35A
40A
TJ=25C
TJ=150C
dirr/d
t,D
IOD
EP
EAK
RAT
EO
FFA
LLO
FR
EVE
RS
ER
EC
OV
ER
YC
UR
RE
NT
400A/s 600A/s 800A/s 1000A/s-0A/s
-100A/s
-200A/s
-300A/s
-400A/sTJ=25C
TJ=150C
diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPEFigure 25. Typical reverse recovery current
as a function of diode currentslope(VR=600V, IF=40A,Dynamic test circuit in Figure E)
Figure 26. Typical diode peak rate of fall ofreverse recovery current as afunction of diode current slope(VR=600V, IF=40A,Dynamic test circuit in Figure E)
IKW40T120TrenchStop Series
IFAG IPV TD VLS 13 Rev. 2.3 12.03.2013
I F
,FO
RW
AR
DC
UR
RE
NT
0V 1V 2V0A
20A
40A
60A
80A
100A
150C
TJ=25C
VF,
FOR
WA
RD
VO
LTAG
E
-50C 0C 50C 100C0,0V
0,5V
1,0V
1,5V
2,0V
40A
25A
IF=80A
10A
VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATUREFigure 27. Typical diode forward current as
a function of forward voltageFigure 28. Typical diode forward voltage as a
function of junction temperature
IKW40T120TrenchStop Series
IFAG IPV TD VLS 14 Rev. 2.3 12.03.2013
IKW40T120TrenchStop Series
IFAG IPV TD VLS 15 Rev. 2.3 12.03.2013
Ir r m
90% Ir r m
10% Ir r m
di /dtF
tr r
IF
i,v
tQS QF
tS
tF
VR
di /dtr r
Q =Q Qr r S F
+t =t tr r S F
+
Figure C. Definition of diodesswitching characteristics
p(t)1 2 n
T (t)j
11
22
nn
TC
r r
r
r
rr
Figure D. Thermal equivalentcircuit
Figure E. Dynamic test circuitLeakage inductance L =180nHand Stray capacity C =39pF.
Figure A. Definition of switching times
Figure B. Definition of switching losses
IKW40T120TrenchStop Series
IFAG IPV TD VLS 16 Rev. 2.3 12.03.2013
Published byInfineon Technologies AG81726 Munich, Germany 2013 Infineon Technologies AGAll Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions orcharacteristics. With respect to any examples or hints given herein, any typical values stated herein and/orany information regarding the application of the device, Infineon Technologies hereby disclaims any and allwarranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectualproperty rights of any third party.
InformationFor further information on technology, delivery terms and conditions and prices, please contact the nearestInfineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on thetypes in question, please contact the nearest Infineon Technologies Office.The Infineon Technologies component described in this Data Sheet may be used in life-support devices orsystems and/or automotive, aviation and aerospace applications or systems only with the express writtenapproval of Infineon Technologies, if a failure of such components can reasonably be expected to cause thefailure of that life-support, automotive, aviation and aerospace device or system or to affect the safety oreffectiveness of that device or system. Life support devices or systems are intended to be implanted in thehuman body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonableto assume that the health of the user or other persons may be endangered.
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