IKW40T120

IKW40T120TrenchStop Series

IFAG IPV TD VLS 1 Rev. 2.3 12.03.2013

Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft,fast recovery anti-parallel Emitter Controlled HE diode

Best in class TO247 Short circuit withstand time 10s Designed for :

- Frequency Converters- Uninterrupted Power Supply

TrenchStop and Fieldstop technology for 1200 V applicationsoffers :

- very tight parameter distribution- high ruggedness, temperature stable behavior

NPT technology offers easy parallel switching capability due topositive temperature coefficient in VCE(sat)

Low EMI Low Gate Charge Very soft, fast recovery anti-parallel Emitter Controlled HE diode Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type VCE IC VCE(sat),Tj=25C Tj,max Marking Code Package

IKW40T120 1200V 40A 1.7V 150C K40T120 PG-TO-247-3

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage VC E 1200 VDC collector currentTC = 25CTC = 100C

IC7540

A

Pulsed collector current, tp limited by Tjmax IC p u l s 105Turn off safe operating areaVCE 1200V, Tj 150C

- 105

Diode forward currentTC = 25CTC = 100C

IF8040

Diode pulsed current, tp limited by Tjmax IF p u l s 105Gate-emitter voltage VG E 20 V

Short circuit withstand time2)

VGE = 15V, VCC 1200V, Tj 150CtS C 10 s

Power dissipationTC = 25C

P t o t 270 W

Operating junction temperature T j -40...+150 CStorage temperature T s t g -55...+150

1 J-STD-020 and JESD-0222) Allowed number of short circuits: 1s.

PG-TO-247-3

G

C

E



Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260



Thermal Resistance

Parameter Symbol Conditions Max. Value Unit

CharacteristicIGBT thermal resistance,junction case

R t h J C 0.45 K/W

Diode thermal resistance,junction case

R t h J C D 0.81

Thermal resistance,junction ambient

R t h J A 40

Electrical Characteristic, at Tj = 25 C, unless otherwise specified

Parameter Symbol ConditionsValue

Unitmin. typ. max.

Static CharacteristicCollector-emitter breakdown voltage V ( B R ) C E S VG E=0V, IC=1.5mA 1200 - - VCollector-emitter saturation voltage VC E ( s a t ) VG E = 15V, IC=40A

T j=25CT j=125CT j=150C

---

1.72.12.3

2.3--

Diode forward voltage VF VG E=0V, IF=40AT j=25CT j=125CT j=150C

---

1.751.751.75

2.3--

Gate-emitter threshold voltage VG E ( t h ) IC=1.5mA,VC E=VG E 5.0 5.8 6.5Zero gate voltage collector current IC E S VC E=1200V ,

VG E=0VT j=25CT j=150C

--

--

0.44.0

mA

Gate-emitter leakage current IG E S VC E=0V,VG E=20V - - 600 nATransconductance g f s VC E=20V, IC=40A - 21 - SIntegrated gate resistor RG i n t 6



Dynamic CharacteristicInput capacitance C i s s VC E=25V,

VG E=0V,f=1MHz

- 2500 - pFOutput capacitance Co s s - 130 -Reverse transfer capacitance C r s s - 110 -Gate charge QG a t e VC C=960V, IC=40A

VG E=15V- 203 - nC

Internal emitter inductancemeasured 5mm (0.197 in.) from case

LE - 13 - nH

Short circuit collector current1) IC ( S C ) VG E=15V, tS C10sVC C = 600V,T j = 25C

- 210 - A

Switching Characteristic, Inductive Load, at Tj=25 C


Unitmin. typ. max.

IGBT CharacteristicTurn-on delay time td ( o n ) T j=25C,

VC C=600V, IC=40A,VG E=0/15V,RG=15 ,L

2 )=180nH,C

2 )=39pFEnergy losses includetail and diodereverse recovery.

- 48 - nsRise time t r - 34 -Turn-off delay time td ( o f f ) - 480 -Fall time t f - 70 -Turn-on energy Eo n - 3.3 - mJTurn-off energy Eo f f - 3.2 -Total switching energy E t s - 6.5 -Anti-Parallel Diode CharacteristicDiode reverse recovery time t r r T j=25C,

VR=600V, IF=40A,diF /d t=800A/s

- 240 - nsDiode reverse recovery charge Q r r - 3.8 CDiode peak reverse recovery current I r r m - 28 ADiode peak rate of fall of reverserecovery current during tb

di r r /d t - 370 - A/s

1) Allowed number of short circuits: 1s.2) Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E.



Switching Characteristic, Inductive Load, at Tj=150 C


Unitmin. typ. max.

IGBT CharacteristicTurn-on delay time td ( o n ) T j=150C

VC C=600V, IC=40A,VG E=0/15V,RG= 15 ,L

1 )=180nH,C

1 )=39pFEnergy losses includetail and diodereverse recovery.

- 52 - nsRise time t r - 40 -Turn-off delay time td ( o f f ) - 580 -Fall time t f - 120 -Turn-on energy Eo n - 5.0 - mJTurn-off energy Eo f f - 5.4 -Total switching energy E t s - 10.4 -Anti-Parallel Diode CharacteristicDiode reverse recovery time t r r T j=150C

VR=600V, IF=40A,diF /d t=800A/s

- 410 - nsDiode reverse recovery charge Q r r - 8.8 - CDiode peak reverse recovery current I r r m - 36 - ADiode peak rate of fall of reverserecovery current during tb

di r r /d t - 330 A/s

1) Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E.



I C

,CO

LLE

CTO

RC

UR

RE

NT

10Hz 100Hz 1kHz 10kHz 100kHz0A

20A

40A

60A

80A

100A

TC=110C

TC=80C

I C,C

OLL

EC

TOR

CU

RR

EN

T

1V 10V 100V 1000V0,1A

1A

10A

100A

DC

10s

tp=3s

50s

500s

20ms

150s

f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGEFigure 1. Collector current as a function of

switching frequency(Tj 150C, D = 0.5, VCE = 600V,VGE = 0/+15V, RG = 15)

Figure 2. Safe operating area(D = 0, TC = 25C,Tj 150C;VGE=15V)

Pto

t,P

OW

ER

DIS

SIPA

TIO

N

25C 50C 75C 100C 125C0W

50W

100W

150W

200W

250W

I C,C

OLL

EC

TOR

CU

RR

EN

T

25C 75C 125C0A

10A

20A

30A

40A

50A

60A

70A

TC, CASE TEMPERATURE TC, CASE TEMPERATUREFigure 3. Power dissipation as a function of

case temperature(Tj 150C)

Figure 4. Collector current as a function ofcase temperature(VGE 15V, Tj 150C)

Ic

Ic



I C

,CO

LLE

CTO

RC

UR

RE

NT

0V 1V 2V 3V 4V 5V 6V0A

10A

20A

30A

40A

50A

60A

70A

80A

90A

100A

15V

7V

9V

11V

13V

VGE=17V

I C,C

OLL

EC

TOR

CU

RR

EN

T

0V 1V 2V 3V 4V 5V 6V0A

10A

20A

30A

40A

50A

60A

70A

80A

90A

100A

15V

7V

9V

11V

13V

VGE=17V

VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGEFigure 5. Typical output characteristic

(Tj = 25C)Figure 6. Typical output characteristic

(Tj = 150C)

I C,C

OLL

EC

TOR

CU

RR

EN

T

0V 2V 4V 6V 8V 10V 12V0A

10A

20A

30A

40A

50A

60A

70A

80A

90A

100A

25CTJ=150C

VC

E(sa

t),C

OLL

EC

TOR

-EM

ITT

SAT

UR

ATI

ON

VO

LTA

GE

-50C 0C 50C 100C0,0V

0,5V

1,0V

1,5V

2,0V

2,5V

3,0V

3,5V

IC=40A

IC=80A

IC=25A

IC=10A

VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATUREFigure 7. Typical transfer characteristic

(VCE=20V)Figure 8. Typical collector-emitter

saturation voltage as a function ofjunction temperature(VGE = 15V)



t,

SW

ITC

HIN

GTI

MES

0A 20A 40A 60A1ns

10ns

100ns

tr

td(on)

tf

td(off)

t,S

WIT

CH

ING

TIM

ES

1 ns

10 ns

100 ns

1000 ns

tf

tr

td(off)

td(on)

IC, COLLECTOR CURRENT RG, GATE RESISTORFigure 9. Typical switching times as a

function of collector current(inductive load, TJ=150C,VCE=600V, VGE=0/15V, RG=15, Dynamic test circuit in Figure E)

Figure 10. Typical switching times as afunction of gate resistor(inductive load, TJ=150C,VCE=600V, VGE=0/15V, IC=40A,Dynamic test circuit in Figure E)

t,S

WIT

CH

ING

TIM

ES

0C 50C 100C 150C10ns

100ns

tr

tf

td(on)

td(off)

VG

E(th

),G

ATE

-EM

ITT

TRS

HO

LDV

OLT

AGE

-50C 0C 50C 100C 150C0V

1V

2V

3V

4V

5V

6V

7V

min.

typ.

max.

TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATUREFigure 11. Typical switching times as a

function of junction temperature(inductive load, VCE=600V,VGE=0/15V, IC=40A, RG=15, Dynamic test circuit in Figure E)

Figure 12. Gate-emitter threshold voltage asa function of junction temperature(IC = 1.5mA)



E

,SW

ITC

HIN

GE

NE

RG

YLO

SSE

S

10A 20A 30A 40A 50A 60A 70A0,0mJ

5,0mJ

10,0mJ

15,0mJ

20,0mJ

25,0mJ

Ets*

Eoff

*) Eon and Etsinclude lossesdue to diode recovery

Eon*

E,S

WIT

CH

ING

EN

ER

GY

LOS

SES

0 mJ

5 mJ

10 mJ

15 mJ Ets*

Eon*

*) Eon and Ets include lossesdue to diode recovery

Eoff

IC, COLLECTOR CURRENT RG, GATE RESISTORFigure 13. Typical switching energy losses

as a function of collector current(inductive load, TJ=150C,VCE=600V, VGE=0/15V, RG=15, Dynamic test circuit in Figure E)

Figure 14. Typical switching energy lossesas a function of gate resistor(inductive load, TJ=150C,VCE=600V, VGE=0/15V, IC=40A,Dynamic test circuit in Figure E)

E,S

WIT

CH

ING

EN

ER

GY

LOS

SES

50C 100C 150C0mJ

5mJ

10mJ

15mJ

Ets*

Eon*


Eoff

E,S

WIT

CH

ING

EN

ER

GY

LOS

SES

400V 500V 600V 700V 800V0mJ

5mJ

10mJ

15mJ

Ets*

Eon*


Eoff

TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGEFigure 15. Typical switching energy losses

as a function of junctiontemperature(inductive load, VCE=600V,VGE=0/15V, IC=40A, RG=15, Dynamic test circuit in Figure E)

Figure 16. Typical switching energy lossesas a function of collector emittervoltage(inductive load, TJ=150C,VGE=0/15V, IC=40A, RG=15, Dynamic test circuit in Figure E)



V

GE,G

ATE

-EM

ITTE

RV

OLT

AG

E

0nC 50nC 100nC 150nC 200nC 250nC0V

5V

10V

15V

960V240V

c,C

AP

AC

ITA

NC

E

0V 10V 20V10pF

100pF

1nF

Crss

Coss

Ciss

QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGEFigure 17. Typical gate charge

(IC=40 A)Figure 18. Typical capacitance as a function

of collector-emitter voltage(VGE=0V, f = 1 MHz)

t SC,S

HO

RT

CIR

CU

ITW

ITH

STA

ND

TIM

E

12V 14V 16V0s

5s

10s

15s

I C(s

c),s

hort

circ

uitC

OLL

EC

TOR

CU

RR

EN

T

12V 14V 16V 18V0A

100A

200A

300A

VGE, GATE-EMITTETR VOLTAGE VGE, GATE-EMITTETR VOLTAGEFigure 19. Short circuit withstand time as a

function of gate-emitter voltage(VCE=600V, start at TJ=25C)

Figure 20. Typical short circuit collectorcurrent as a function of gate-emitter voltage(VCE 600V, Tj 150C)



V C

E,C

OLL

EC

TOR

-EM

ITTE

RV

OLT

AG

E

0V

200V

400V

600V

0A

20A

40A

60A

1.5us1us0.5us0us

IC

VCE

I C,C

OLL

EC

TOR

CU

RR

EN

T

0V

200V

400V

600V

0A

20A

40A

60A

1.5us1us0.5us0us

IC

VCE

t, TIME t, TIMEFigure 21. Typical turn on behavior

(VGE=0/15V, RG=15, Tj = 150C,Dynamic test circuit in Figure E)

Figure 22. Typical turn off behavior(VGE=15/0V, RG=15, Tj = 150C,Dynamic test circuit in Figure E)

Z thJ

C,T

RA

NS

IEN

TTH

ER

MA

LR

ESI

STA

NC

E

10s 100s 1ms 10ms 100ms10-3K/W

10-2K/W

10-1K/W

single pulse0.010.02

0.05

0.1

0.2

D=0.5

Z thJ

C,T

RA

NS

IEN

TTH

ER

MA

LR

ESI

STA

NC

E

10s 100s 1ms 10ms 100ms10-3K/W

10-2K/W

10-1K/W

single pulse0.010.02

0.05

0.1

0.2

D=0.5

tP, PULSE WIDTH tP, PULSE WIDTHFigure 23. IGBT transient thermal resistance

(D = tp / T)Figure 24. Diode transient thermal

impedance as a function of pulsewidth(D=tP/T)

R , ( K / W ) , ( s ) 0.159 1.10*10-1

0.133 1.56*10-2

0.120 1.35*10-3

0.038 1.51*10-4

C 1=1 /R 1

R 1 R2

C 2=2 /R 2

R , ( K / W ) , ( s ) 0.228 1.01*10-1

0.257 1.15*10-2

0.238 1.30*10-3

0.087 1.53*10-4

C 1=1 /R 1

R 1 R2

C 2=2 /R 2



t rr

,RE

VE

RSE

RE

CO

VER

YTI

ME

400A/s 600A/s 800A/s 1000A/s0ns

100ns

200ns

300ns

400ns

500ns

600ns

TJ=25C

TJ=150C

Qrr,R

EV

ER

SE

RE

CO

VE

RY

CH

ARG

E

400A/s 600A/s 800A/s 1000A/s0C

2C

4C

6C

8C

TJ=25C

TJ=150C

diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPEFigure 23. Typical reverse recovery time as

a function of diode current slope(VR=600V, IF=40A,Dynamic test circuit in Figure E)

Figure 24. Typical reverse recovery chargeas a function of diode currentslope(VR=600V, IF=40A,Dynamic test circuit in Figure E)

I rr,R

EV

ER

SE

RE

CO

VE

RY

CU

RR

EN

T

400A/s 600A/s 800A/s 1000A/s0A

5A

10A

15A

20A

25A

30A

35A

40A

TJ=25C

TJ=150C

dirr/d

t,D

IOD

EP

EAK

RAT

EO

FFA

LLO

FR

EVE

RS

ER

EC

OV

ER

YC

UR

RE

NT

400A/s 600A/s 800A/s 1000A/s-0A/s

-100A/s

-200A/s

-300A/s

-400A/sTJ=25C

TJ=150C

diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPEFigure 25. Typical reverse recovery current

as a function of diode currentslope(VR=600V, IF=40A,Dynamic test circuit in Figure E)

Figure 26. Typical diode peak rate of fall ofreverse recovery current as afunction of diode current slope(VR=600V, IF=40A,Dynamic test circuit in Figure E)



I F

,FO

RW

AR

DC

UR

RE

NT

0V 1V 2V0A

20A

40A

60A

80A

100A

150C

TJ=25C

VF,

FOR

WA

RD

VO

LTAG

E

-50C 0C 50C 100C0,0V

0,5V

1,0V

1,5V

2,0V

40A

25A

IF=80A

10A

VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATUREFigure 27. Typical diode forward current as

a function of forward voltageFigure 28. Typical diode forward voltage as a

function of junction temperature



Ir r m

90% Ir r m

10% Ir r m

di /dtF

tr r

IF

i,v

tQS QF

tS

tF

VR

di /dtr r

Q =Q Qr r S F

+t =t tr r S F

+

Figure C. Definition of diodesswitching characteristics

p(t)1 2 n

T (t)j

11

22

nn

TC

r r

r

r

rr

Figure D. Thermal equivalentcircuit

Figure E. Dynamic test circuitLeakage inductance L =180nHand Stray capacity C =39pF.

Figure A. Definition of switching times

Figure B. Definition of switching losses



Published byInfineon Technologies AG81726 Munich, Germany 2013 Infineon Technologies AGAll Rights Reserved.

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InformationFor further information on technology, delivery terms and conditions and prices, please contact the nearestInfineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on thetypes in question, please contact the nearest Infineon Technologies Office.The Infineon Technologies component described in this Data Sheet may be used in life-support devices orsystems and/or automotive, aviation and aerospace applications or systems only with the express writtenapproval of Infineon Technologies, if a failure of such components can reasonably be expected to cause thefailure of that life-support, automotive, aviation and aerospace device or system or to affect the safety oreffectiveness of that device or system. Life support devices or systems are intended to be implanted in thehuman body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonableto assume that the health of the user or other persons may be endangered.

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IKW40T120