History & Future of TFH lithography - IDEMA | International · PDF file ·...

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History & Future of TFH lithography

IDEMA – Symposium on Perpendicular RecordingDecember 7, 2006Norbert Kappel, ASML Special Applications

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Outline

History of ASML systems in TFHReview of Imaging/Processing capabilitiesFlash vs. HDDFuture Roadmaps

Areal densityImaging requirements & solutions

Conclusions

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Outline

History of ASML systems in TFHReview of Imaging/Processing capabilitiesFlash vs. HDDFuture Roadmaps

Areal densityImaging requirements & solutions

Conclusions

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TFH Lithography: an “ASML Special Application”PAS 5500 /300

PAS 5500 /850 & /1150

Stepper system (248nm)

Scanner systems (248nm & 193nm)

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....and ASML will support our TFH

customers to succeed

ASML understands TFH is driven to constantly increase storage density…………

2002: advanced processing at <100 nm

TMR read headsPM recording

HA magnetic recordingDTR / Patterned media

High Bs write heads

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PAS5500/300 PAS5500/1150PAS5500/850Wavelength 248nm (DUV)Resolution 0.25 µmOverlay < 45nmDistortion < 35nmField size 31.1mm diaThroughput >120WPH (for 150mm substrate)

Wavelength 248nm (DUV)Resolution 0.11 µmOverlay < 15nmDistortion < 12nmField size 26 x 33 mmThroughput >145 WPH (for 150mm substrate)

Wavelength 193nm (DUV)Resolution 0.09 µmOverlay < 12nmDistortion < 12nmField size 26 x 33 mmThroughput >135 WPH (for 150mm substrate)

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ASML PAS5500 system TFH innovations & upgrades

Thick, heavy AlTiC wafer handlingTFH dedicated software & metrologyESD prevention upgrade

Overlay & related upgradesImaging upgrades

SMARTHEAD

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Outline

History of ASML systems in TFHReview of Imaging/Processing capabilitiesFlash vs. HDDFuture Roadmaps

Areal densityImaging requirements & solutions

Conclusions

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Feature sizes: 500 nm down to 150 nm

Initial imaging test on typical TFH isolated features

200 nm

180 nm

160 nmPAS 5500 /300

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ASML TFH Imaging knowledge – ISO features

Challenge Results

Thick resist imaging with enhanced DoF

Successful imaging of sub-300nm trench in 4um+ thick

resistUltimate resolution in thin

resistSuccessful imaging of 70nm

lines and belowIsolated lines (IL) + Assist Features (AF) illumination

process windows

Tailored illumination, no intensity loss, largest process window (DoF, productivity)*

*: automatic aperture size change by zoom axicon

Developed with our customers on /300 and later enhanced on the /800 and /1100 series scanners

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248nm DUV- Thick resist imaging for TFHUsing a low NA setting and conventional illumination

300nm Isolated Space imaging on Silicon in 4um of resist

Resist: Clarient AZ DTF-8 NA setting: 0.40 σ value: 0.37

300nm Isolated Space imaging on Nickel-Iron in 4um of resist

+0.0um +0.2um +0.4um +0.6um

+0.2um +0.4um +0.6um +0.8um

Focus setting

Focus setting

PAS 5500/300

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110nm Isolated Line process: without AF

- 0.4 µm

- 0.3 µm

- 0.2 µm - 0.1 µm 0.0 µm

0.1 µm

0.2 µm

0.25 µm

0.35 µm

ED-Window measured by Hitachi SEMHorizontal Position (0,-3)

0.0

20.0

40.0

60.0

80.0

100.0

120.0

140.0

160.0

-0.60 -0.40 -0.20 0.00 0.20 0.40

Focus [µm]

Crit

ical

Dim

ensi

on [ µ

m]

13.413.814.214.615.015.415.816.216.617.017.4

NO AF

NA 0.66 σ = 0.75/0.45

20.0

40.0

60.0

80.0

100.0

120.0

140.0

160.0

Crit

ical

Dim

ensi

on [µ m

]

With AF

- 0.15 µm - 0.05 µm 0.05 µm 0.15 µm

- 0.35 µm

- 0.25 µm

and with AF (assist features)

ConfidentialPAS 5500/850

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F= -0.2 F= -0.1 F= 0.0 F= +0.1 F= +0.270nm Isolated Lines : AltPSM

Alternating Phase Shift Mask - imaging for TFH

100 nm Isolated, AltPSMF=0.1umF=-0.2um F=0.2umF=-0.1um F=0.0um

F=0.0umF=-0.2um F=+0.2um50nm Isolated Lines : AltPSM

PAS 5500/1100

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Summary of Imaging capability

Imaging @ resolution limit for Iso ≠ Dense features, so for TFH manufacturing:

Advanced imaging with Aerial illuminatorAssist features to increase process window

ASML PAS5500 scanners for TFH manufacturing:Imaging of 110 - 100nm isolated features without assist featuresProven results down to 50nm using Phase Shift MaskMeasure and adjust for aberrations and Iso-focal tilt

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Outline

History of ASML systems in TFHReview of Imaging/Processing capabilitiesFlash vs. HDDFuture Roadmaps

Areal densityImaging requirements & solutions

Conclusions

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Samsung’s press release May 23, 2005

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Storage capacity development (1 of 3)

0.1

1

10

100

1000

2004 2006 2008 2010

Stor

age

capa

city

(Gby

te)

flash (1 chip)

1.8” HDD2.5” HDD

3.5” HDD

1” HDD

Source: Nikkei Electronics October 2005

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Storage capacity development (2 of 3)

flash (memory card)

0.1

1

10

100

1000

2004 2006 2008 2010

Stor

age

capa

city

(Gby

te)

flash (1 chip)

1” HDD

2.5” HDD3.5” HDD

1.8” HDD

Multiple chips on a memory card & following the ITRS roadmap gives flash a CAGR advantage

Source: Nikkei Electronics October 2005

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flash (memory card)

Storage capacity development (3 of 3)

0.1

1

10

100

1000

2004 2006 2008 2010

Stor

age

capa

city

(Gby

te)

flash (1 chip)

3.5” HDD

This challenge can be taken up by technology roadmap acceleration

2.5” HDD

1.8” HDD1” HDD

Source: Nikkei Electronics October 2005, Flash memory announcements, Potential HDD scenario

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HDD & NAND Flash data storage applications

0200400600800

10001200140016001800

2004 2005 2006 2007 2008 2009 2010

Mill

ion

units

disk drives heads media

Source: Coughlin Associates October 2005

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HDD & NAND Flash data storage applications

June 2006: 1st

32 Gb SSD laptop sells at

> 3000$

Source: Samsung press release

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HDD & NAND Flash data storage applications

June 2006: 1st

32 Gb SSD laptop sells at

> 3000$

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Outline

History of ASML systems in TFHReview of Imaging/Processing capabilitiesFlash vs. HDDFuture Roadmaps

Areal densityImaging requirements & solutions

Conclusions

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Advanced Storage Density Roadmap

2006 2007 2008 2009 2010 2011 2012 2013 2014 2015

500

100

1000

200

year

Areal density [Gb/in2]

TFH technology involves steps in material science (GMR, TMR, high Bs) & scaling

Media technology involves steps in material science (high Ku, high Hc, HAMR) but is this has

limitations: patterning must be introduced

500 Gb/in2

1 Tb/in2

250 Gb/in2

2 Tb/in2

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ITRS roadmap = NAND flash technology roadmap

Today NAND Flash drives the ITRS roadmap

Market requirements are much tighter than ITRS, and as the technology and market leader, ASML has supported these tighter market requirements with the most advanced equipment

Source: ITRS Roadmap 2005

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ITRS & TFH technologyLeveraging similarities & bridging differences

Spec differences originate from different application of similar parameters

ITRS – Flash requirements parameter TFH

requirements

Dense L & S (thin resist) Resolution [nm]

Overlay [nm]

CD control [%, nm]

UDoF[um]

Field Stitching [nm]

Iso Lines (thin resist)Iso Trenches (thick resist)

Design rule related to CDReader – Writer positionWriter height – Lapping guides

Yield considerations Reader / Writer dimensions

ManufacturabilityProcess latitudeISO trench process

Not a requirement Backend rowbar processing

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ITRS & HDD Technology Roadmap2006 2007 2008 2009 2010 2011 2012 2013 2014 2015

ITRS 2005

TFH

Media

Flash Half pitch

Litho technology

Reader width

ISO lines

Litho technology

Track width

Imprint technology

64 3657 51 45 40 32 28 25 23

ArF dryArF wet (NA & fluid generations)

EUV

BPM Volume (multiple template generations)

45 20*65

80 writer

2742 38 34 30 24 21 19 171625 23 20 18 14 13 11 10

MPU in resistMPU phys gate

4828

100 writer

25 patterned

media

16 patterned

media

29*

500 Gb/in2 1 Tb/in2250 Gb/in2

BPM Pilot & DTR

15*

KrF / ArF dry

PilotArF wet (NA & fluid generations)

2006 2007 2008 2009 2010 2011 2012 2013 2014 2015

*: ASML estimate, based on bit width

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Technology roadmapConsiderations for TFH reader / iso lines imaging

Existing dry ArF resist stacks are able to support 32nm dense L/S, and likely also sub-20nm iso lines resist properties

image contrast

For dense L/S, contrast is cranked up by using higher NA; due to lack of diffraction pattern, a higher NA is less impor-tant for iso lines, but are att PSM and other mask tricks used to achieve contrast and smaller CD(u)

phys

ics

depth of focusFor iso lines, this can be the limiting factor; DoF is improved by using mask tricks (scatterbars, etc.) or by using immersion lithography

dose performance Better dose performance gives more slack in resist properties and image contrast

overlay

syst

em

Typically, a system / platform with improved imaging performance also exhibits improved overlay performance, due to associated IC requirements

focus performance Improved focus performance gives more slack in useable depth of focus

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System Overlay Roadmap

0

5

10

15

20

25

30

35

40

45

50

PAS5500

/300

PAS5500

/850

PAS5500

/1150

XT:1400

XT:1700-i

sing

le m

achi

ne o

verla

y [n

m]

* *

*: TFH manufacturing opportunity

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TWINSCAN™ XT:1700i*: Future platform for advanced Imaging

Illumination• Laser• Uniformity

IlluminationIllumination•• LaserLaser•• UniformityUniformity

6 kHz, 60W< 0.3 %6 kHz, 60W6 kHz, 60W< 0.3 %< 0.3 %

Overlay• Stage Repeatability• System Overlay• Matched Overlay

OverlayOverlay•• Stage RepeatabilityStage Repeatability•• System OverlaySystem Overlay•• Matched OverlayMatched Overlay

4 nm7 nm11 nm

4 nm4 nm7 nm7 nm11 nm11 nm

Throughput• 125 shots, 30mJ/cm2

ThroughputThroughput•• 125 shots, 30mJ/cm125 shots, 30mJ/cm22 > 122 WPH> 122 WPH> 122 WPH

Lens • Max Lens NA• Field Size• RMS• Astigmatism• Focal Plane Deviation• Resolution Annular • Resolution Dipolar• CDU 3σ• Distortion

Lens Lens •• Max Lens NAMax Lens NA•• Field SizeField Size•• RMSRMS•• AstigmatismAstigmatism•• Focal Plane DeviationFocal Plane Deviation•• Resolution Annular Resolution Annular •• Resolution DipolarResolution Dipolar•• CDU 3CDU 3σσ•• DistortionDistortion

1.226 x 33 mm1.4 nm20 nm30 nm50 nm45 nm3.0 nm5nm

1.21.226 x 33 mm26 x 33 mm1.4 nm1.4 nm20 nm20 nm30 nm30 nm50 nm50 nm45 nm45 nm3.0 nm3.0 nm5nm5nm

*: TFH manufacturing opportunity

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TFH Technology requirements & equipment

TFH

Reader width

ISO lines

Litho technology

2006 2007 2008 2009 2010 2011 2012 2013 2014 2015

45 2065

KrF / ArF dry

29

500 Gb/in2 1 Tb/in2250 Gb/in2

PAS5500/1150C

Overlay 10 9 8 6 6 5 4 4 3 2CDu <6% <6% <5% <5% <5% <5% <5% <5% <5% <5%

XT/1700F-I *

Successorplatform*

Pilot

Pilot

PilotArF wet (NA & fluid generations)

PAS5500/850D

15

*: TFH manufacturing opportunity

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Proven high throughput dual stage design

No metrology systems near lens for optimum

implementation of immersion shower head

Dry alignment &wafer mapping

(focus & levelling)

The dual stage of the XT platform provides advantages

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Summary & Conclusion

The PAS 5500 platform with dedicated TFH options has supported the areal density roadmap to dateASML has in-depth knowledge of this “Special Application” (dedicated business unit)The combination provides Lithography patterning solutions for the foreseeable future to the disk drive industryThe XT platform is the likely candidate for next generation (immersion) lithography in TFH applications

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Appendix: Acronyms

TFH Thin Film HeadDUV Deep UltraVioletDoF Depth of FocusWPH Wafers per hourPSM Phase Shift MaskIL Isolated LineAF Assist features