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Advanced Power Electronics -- EPRI Preview P. M. Grant
13 March 1999
Strategic InitiativeProgram
Beyond Silicon…Advanced Power Electronics for
FACTS Technology
Jerry Melcher
APE Initiative Lead
Energy Delivery and Utilization
Advanced Power Electronics -- EPRI Preview P. M. Grant
13 March 1999
Strategic InitiativeProgram
Initiative Objectives
• Why are we doing this?
• Where are we going?
Advanced Power Electronics -- EPRI Preview P. M. Grant
13 March 1999
Strategic InitiativeProgram
Power ElectronicsThe Thyristor
Advanced Power Electronics -- EPRI Preview P. M. Grant
13 March 1999
Strategic InitiativeProgram
Thyristor - SCR
Advanced Power Electronics -- EPRI Preview P. M. Grant
13 March 1999
Strategic InitiativeProgram
Power Progress for Si
Advanced Power Electronics -- EPRI Preview P. M. Grant
13 March 1999
Strategic InitiativeProgram
Initiative Objectives
• Why are we doing this?– Si Power Devices are Reaching Their
Fundamental Limits of Performance.
• Where are we going?
Advanced Power Electronics -- EPRI Preview P. M. Grant
13 March 1999
Strategic InitiativeProgram
The “Diamond” Structure
Advanced Power Electronics -- EPRI Preview P. M. Grant
13 March 1999
Strategic InitiativeProgram
Si Electrons
3s 3p
Advanced Power Electronics -- EPRI Preview P. M. Grant
13 March 1999
Strategic InitiativeProgram
Physics of Semiconductors
E
k{EEGG
k•p Perturbation Theory
n nn jj n
n jj n
G v
k
m m
n j
m
m m
n j
m
m mEc v
kk p
pp
pp
bg bg bg bg
bg bg
02
0 0
0 0
12 0 0
0 0
2
2 2 2
2
2
,
,*
*
Advanced Power Electronics -- EPRI Preview P. M. Grant
13 March 1999
Strategic InitiativeProgram
Chemistry of Semiconductors
Advanced Power Electronics -- EPRI Preview P. M. Grant
13 March 1999
Strategic InitiativeProgram
Initiative Objectives
• Why are we doing this?– Si Power Devices are Reaching Their
Fundamental Limits of Performance.
• Where are we going?– SiC and GaN have Breakdown Electrical
Fields ~10 Times Higher than Si. Both 4 Times the Forward Current…at the Same Unit Cost! (maybe)
Advanced Power Electronics -- EPRI Preview P. M. Grant
13 March 1999
Strategic InitiativeProgram
EPRI/DARPA13-18 M$, 3 Years
• Nasa-Lewis SiC
• Northrup-Grumman SiC
• Vanderbilt University SiC
• Silicon Power Corp SiC
• University of Florida GaN
• Cal Tech GaN
Advanced Power Electronics -- EPRI Preview P. M. Grant
13 March 1999
Strategic InitiativeProgram
Advantages of Post-Silicon Materials
CVDCVDPropertyProperty SiSi3C SiC (6C SiC)3C SiC (6C SiC) Diamond DiamondGaNGaNImportanceImportance
Bandgap (300K) 1.12.2 (2.9) 5.5 3.4Blocking Voltage
Maximum Operating 500>900 (>1000)1400 >800Limits Power Flow Temp (K)
Breakdown Voltage 0.34 10 5Maximum(Eb, 106 V/cm) Power Capacity
Hole Mobility 60040 1600 200Switching Speed (RT, cm2/Vs)
Thermal Conductivity 1.55 20 1.3Cooling Rate (CT, w/cm)
Advanced Power Electronics -- EPRI Preview P. M. Grant
13 March 1999
Strategic InitiativeProgram
SiC Growth
SiCCharge
2200 C
Boule
2000 C
Sublimation
6H-SiC Substrate
RF Coils
H2
SiH4
C3H8
HCL
N2
Al(Me)3
CVD
Advanced Power Electronics -- EPRI Preview P. M. Grant
13 March 1999
Strategic InitiativeProgram
SiC: Progress in Wafer Size
Advanced Power Electronics -- EPRI Preview P. M. Grant
13 March 1999
Strategic InitiativeProgram
SiC: Wafer Price vs. Year
Advanced Power Electronics -- EPRI Preview P. M. Grant
13 March 1999
Strategic InitiativeProgram
Defects: Micropipes
2 m
Micropipes form to relieve strain around super-screw dislocations.
0
5000
10000
15000
20000
25000
Bu
rger
s ve
ctor
sq
uar
ed, Å
2
30000
0 400 800 1200 1600
core radius, Å2000
b2
ro
82G
surface energy, = 4 J/m2
shear modulus, G = 200 GPab2
ro16Å
b = 6b0
Advanced Power Electronics -- EPRI Preview P. M. Grant
13 March 1999
Strategic InitiativeProgram
SiC: Micropipe Density vs. Year
Advanced Power Electronics -- EPRI Preview P. M. Grant
13 March 1999
Strategic InitiativeProgram
SiC: Record µPipe Density
6
1
2
7
3
458
Advanced Power Electronics -- EPRI Preview P. M. Grant
13 March 1999
Strategic InitiativeProgram
SiC Thyristor:Forward Voltage
Advanced Power Electronics -- EPRI Preview P. M. Grant
13 March 1999
Strategic InitiativeProgram
SiC Diode:Reverse Characterisitics
Advanced Power Electronics -- EPRI Preview P. M. Grant
13 March 1999
Strategic InitiativeProgram
What About GaN& Diamonds?
See OutPost 8
“Why Diamonds are a Girl’s Best Friend!”
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