Strategic Initiative Program Beyond Silicon… APE-EPRI Palo Alto/APE … · APE Initiative Lead Energy Delivery and Utilization . Advanced Power Electronics -- EPRI Preview P. M

Advanced Power Electronics -- EPRI Preview

P. M. Grant

13 March 1999

Strategic Initiative

Program

Beyond Silicon…

Advanced Power Electronics for

FACTS Technology

Jerry Melcher

APE Initiative Lead

Energy Delivery and Utilization


P. M. Grant

13 March 1999


Program

Initiative Objectives

• Why are we doing this?

• Where are we going?


P. M. Grant

13 March 1999


Program

Power Electronics

The Thyristor


P. M. Grant

13 March 1999


Program

Thyristor - SCR


P. M. Grant

13 March 1999


Program

Power Progress for Si


P. M. Grant

13 March 1999


Program



– Si Power Devices are Reaching Their

Fundamental Limits of Performance.



P. M. Grant

13 March 1999


Program

The “Diamond”

Structure


P. M. Grant

13 March 1999


Program

Si Electrons

3s 3p


P. M. Grant

13 March 1999


Program

Physics of

Semiconductors E

k

{ EG

k•p Perturbation Theory

n n

n jj n

n jj n

G v

k

m m

n j

m

m m

n j

m

m mEc v

kk p

pp

pp

b g b g b g b g

b g b g

02

0 0

0 0

12 0 0

0 0

2

2 2 2

2

2

,

,*

*


P. M. Grant

13 March 1999


Program

Chemistry of

Semiconductors


P. M. Grant

13 March 1999


Program



– Si Power Devices are Reaching Their

Fundamental Limits of Performance.


– SiC and GaN have Breakdown Electrical

Fields ~10 Times Higher than Si. Both 4

Times the Forward Current…at the

Same Unit Cost! (maybe)


P. M. Grant

13 March 1999


Program

EPRI/DARPA

13-18 M$, 3 Years • Nasa-Lewis SiC

• Northrup-Grumman SiC

• Vanderbilt University SiC

• Silicon Power Corp SiC

• University of Florida GaN

• Cal Tech GaN


P. M. Grant

13 March 1999


Program

Advantages of

Post-Silicon Materials CVD

Property Si 3C SiC (6C SiC) Diamond GaN

Importance

Bandgap (300K) 1.1 2.2 (2.9) 5.5 3.4 Blocking

Voltage

Maximum Operating 500 >900 (>1000) 1400 >800 Limits

Power Flow

Temp (K)

Breakdown Voltage 0.3 4 10 5

Maximum

(Eb, 106 V/cm) Power

Capacity

Hole Mobility 600 40 1600 200

Switching Speed

(RT, cm2/Vs)

Thermal Conductivity 1.5 5 20 1.3 Cooling

Rate

(CT, w/cm)


P. M. Grant

13 March 1999


Program

SiC Growth

SiC

Charge

2200 C

Boule

2000 C

Sublimation

6H-SiC Substrate

RF Coils

H2

SiH4

C3H8

HCL

N2

Al(Me)3

CVD


P. M. Grant

13 March 1999


Program

SiC: Progress in

Wafer Size


P. M. Grant

13 March 1999


Program

SiC: Wafer Price

vs. Year


P. M. Grant

13 March 1999


Program

Defects: Micropipes

2 m

Micropipes form to relieve strain around super-screw dislocations.

0

5000

10000

15000

20000

25000

Bu

rger

s vec

tor

squ

are

d,

Å2

30000

0 400 800 1200 1600

core radius, Å

2000

b2

ro

82

Gsurface energy,

= 4 J/m2

shear modulus,

G = 200 GPa b2

ro

16Å

b = 6b0


P. M. Grant

13 March 1999


Program

SiC: Micropipe

Density vs. Year


P. M. Grant

13 March 1999


Program

SiC:

Record µPipe Density

6

1

2

7

3

4 5

8


P. M. Grant

13 March 1999


Program

SiC Thyristor:

Forward Voltage


P. M. Grant

13 March 1999


Program

SiC Diode:

Reverse Characterisitics


P. M. Grant

13 March 1999


Program

What About GaN

& Diamonds?

See OutPost 8

“Why Diamonds are a Girl’s Best Friend!”

Documents

Strategic Initiative Program Beyond Silicon… APE-EPRI Palo Alto/APE … · APE Initiative Lead Energy Delivery and Utilization . Advanced Power Electronics -- EPRI Preview P. M