Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program Beyond Silicon… Advanced Power Electronics for FACTS

Advanced Power Electronics -- EPRI Preview P. M. Grant

13 March 1999

Strategic InitiativeProgram

Beyond Silicon…Advanced Power Electronics for

FACTS Technology

Jerry Melcher

APE Initiative Lead

Energy Delivery and Utilization


13 March 1999


Initiative Objectives

• Why are we doing this?

• Where are we going?


13 March 1999


Power ElectronicsThe Thyristor


13 March 1999


Thyristor - SCR


13 March 1999


Power Progress for Si


13 March 1999



• Why are we doing this?– Si Power Devices are Reaching Their

Fundamental Limits of Performance.

• Where are we going?


13 March 1999


The “Diamond” Structure


13 March 1999


Si Electrons

3s 3p


13 March 1999


Physics of Semiconductors

E

k{EEGG

k•p Perturbation Theory

n nn jj n

n jj n

G v

k

m m

n j

m

m m

n j

m

m mEc v

kk p

pp

pp

bg bg bg bg

bg bg

02

0 0

0 0

12 0 0

0 0

2

2 2 2

2

2

,

,*

*


13 March 1999


Chemistry of Semiconductors


13 March 1999



• Why are we doing this?– Si Power Devices are Reaching Their

Fundamental Limits of Performance.

• Where are we going?– SiC and GaN have Breakdown Electrical

Fields ~10 Times Higher than Si. Both 4 Times the Forward Current…at the Same Unit Cost! (maybe)


13 March 1999


EPRI/DARPA13-18 M$, 3 Years

• Nasa-Lewis SiC

• Northrup-Grumman SiC

• Vanderbilt University SiC

• Silicon Power Corp SiC

• University of Florida GaN

• Cal Tech GaN


13 March 1999


Advantages of Post-Silicon Materials

CVDCVDPropertyProperty SiSi3C SiC (6C SiC)3C SiC (6C SiC) Diamond DiamondGaNGaNImportanceImportance

Bandgap (300K) 1.12.2 (2.9) 5.5 3.4Blocking Voltage

Maximum Operating 500>900 (>1000)1400 >800Limits Power Flow Temp (K)

Breakdown Voltage 0.34 10 5Maximum(Eb, 106 V/cm) Power Capacity

Hole Mobility 60040 1600 200Switching Speed (RT, cm2/Vs)

Thermal Conductivity 1.55 20 1.3Cooling Rate (CT, w/cm)


13 March 1999


SiC Growth

SiCCharge

2200 C

Boule

2000 C

Sublimation

6H-SiC Substrate

RF Coils

H2

SiH4

C3H8

HCL

N2

Al(Me)3

CVD


13 March 1999


SiC: Progress in Wafer Size


13 March 1999


SiC: Wafer Price vs. Year


13 March 1999


Defects: Micropipes

2 m

Micropipes form to relieve strain around super-screw dislocations.

0

5000

10000

15000

20000

25000

Bu

rger

s ve

ctor

sq

uar

ed, Å

2

30000

0 400 800 1200 1600

core radius, Å2000

b2

ro

82G

surface energy, = 4 J/m2

shear modulus, G = 200 GPab2

ro16Å

b = 6b0


13 March 1999


SiC: Micropipe Density vs. Year


13 March 1999


SiC: Record µPipe Density

6

1

2

7

3

458


13 March 1999


SiC Thyristor:Forward Voltage


13 March 1999


SiC Diode:Reverse Characterisitics


13 March 1999


What About GaN& Diamonds?

See OutPost 8

“Why Diamonds are a Girl’s Best Friend!”

Documents

Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program Beyond Silicon… Advanced Power Electronics for FACTS