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5G Deployment Driving RF and
SOI Technology Opportunity
Laura Formenti
DMA Marketing Director
STMicroelectronics
International RF-SOI Workshop, Shanghai, September 17, 2019
2Agenda 2
• 5G deployment status
• 5G disruption driving RF content
• RF technology for 5G
• ST RF-SOI technologies
• ST value as RF technology partner
35G Standardization & Deployment
• 5G standard status & schedule
• Major equipment manufacturers carrying out trials to achieve 5G commercial use by 2020
• 5G will cost much more to deploy than previous mobile technologies and it will take much longer to perfect
3
• Rel.15 (5G phase 1 or ‘stand-alone’) frozen in
Q1-19
• Rel.16 (5G phase 2 5G V2X, industrial IoT,
URLLC enhancements) to be frozen in Q1-20
Image courtesy of 3gpp
45G Deployment Status
• 5G investments organized since 2015 at national level through the three mobile operators: China Mobile, China Unicom and
China Telecom
• 5G commercial roll-out in 40 cities by October 2019
• Leading 5G network deployment in more than 80 cities
• 5G trials started in 2014
• Recent warning the technology will take much longer than
previously thought
• All MNOs have started 5G trials with commercial launches
planned by the end of 2019
• AT&T plans to expand 5G nationwide in the first half of 2020
• AT&T and Verizon using mmWave spectrum for FWA
• 138 trials across all 28 member states recorded by early 2019
• However only 7% of 5G spectrum assigned
4
Source:ABI Research
The 5G Disruption
• Very high peak data rate – x10-20* (up to 20Gbps DL)
• Reduced latency – 10 times lower (1ms)*
• Very high reliability – 99.999%
• High density connected nodes ( >106 / km2 )
• High coverage
• New architecture with diversified and denser network (small cells)
• New technologies: Advanced beamforming, massive MIMO
• New spectrum: Use of millimeter wave
* vs 4G
5G Network Infrastructure
Front Haul Fixed Wireless To the Home
Small Cell
Repeater
Base
Station
5G Mobility
5
5G Driving Smartphone RF Content Growth
5G massive multi-band requirement expands Si content in RF Front End Module
6
Sub-6 GHz
2016 2018 2019-20
>75% RF-SOI
area increase
>25% RF-SOI
area increase
RF FEM
• MIMO 4x4 DL/UL
• Sub-6GHz bands• Total Carrier BW
800MHz (up to 8 CC CA)
• Dual connectivity• Continuing growth
of CA combination number
5G RF TechnologiesFull range of 5G RF leading technologies for terminals and infrastructure ICs
7
H9SOIFEM C65SOIFEM SOIMMW BiCMOS7RF BiCMOS9MW BiCMOS55 28FDSOI
Device Cross-section
Applications • 4G & 5G sub-6GHz handsets /
BTS RF FEM
• WiFi RF FEM
• 5G sub-6GHz
handsets / BTS
RF FEM
• WiFi
802.11ac/ax FEM
• 5G mmWave
handsets / BTS RF
FEM & RF
Transceiver
• 5G mmW PAA
• WiGig
802.11ad/ay
• WiFi
802.11ac/ax RF
FEM
• 5G sub-6 GHz /
mmW BTS RF
FEM &
Transceiver
• 5G mmW BTS
RF FEM &
Transceiver
• 5G mmW PAA
• High-speed
AD/DA and I/O
• 5G BTS RF
FEM &
Transceiver
Process lithoWafer size
Techn. node
130nm
8’’
PD-SOI
65nm
12’’
PD-SOI
65/40nm
12’’
PD-SOI
250nm
8’’
SiGe
130nm
8’’
SiGe
55nm
12’’
SiGe
28nm
12’’
FD-SOI
Key benefits High performance analog RF dedicated processes for RF Switches, LNA, PA & RF FEM integration capability
Based on high-performance HBT
Analog RF for infrastructure, including high-end & digital
integration capability
RF, Mixed signal
& Digital
Integration
Status Production Production 2020 Production Production Production Production
RF-SOI BiCMOS FDSOI
88
Picture Source: Soitec
RF switch (*)
H9SOIFEM
LNA 4G LTE & 5G sub-6 GHz
H9SOIFEM C65SOIFEM
WiFimodule
Sub-6 GHz
WiFi FEM (Switch, LNA, PA) @ 2.4 – 5.8 GHz
H9SOIFEM BiCMOS7RF
ST RF Technologies for 5G Sub-6 GHz Smartphone RF FEMs
(*) proliferation due to multi-antenna & multi-band support
99
RF FEM + RF Transceiver integration
SOIMMW (RF-SOI 65/40nm)
mmWave
RF FEM RF + IF Transceiver
Switch
Antenna tuner
LNA
PA
• SOIMMW RF-SOI process for mmWave support
• 28FDSOI wide IP portfolio including low power / high-speed AD/DA and SerDes
Picture Source: Soitec
28FDSOI
Mixed signal / digital designs
ADC
DAC
IF Up/Down Conv.
High-speed
IO
ST RF Technologies for 5G mmWaveSmartphone RF FEMs
RF Up/Down Conv.
10
ST RF FEM Technologies across multiple end markets
Terminals Internet of Things
2.4GHz WiFi & IoT4.5G LTE-A Pro
5GHz WiFi(802.11ac/ax)
5G sub-6GHz
5G mmWave/PAA, WiGig 802.11ad/ay
Cellular Infrastructure WLAN (WiFi, WiGig)
IoT
Integration scale
H9SOIFEM
BiCMOS7RF (WiFi FEM)
H9SOIFEM
C65SOIFEM
BiCMOS9MW
SOIMMW
BiCMOS9MW (BTS, Small cell)
Phased Array Antenna / beamforming
BiCMOS55 (BTS, Small cell)
BiCMOS7RF (WiFi FEM)
ST RF-SOI Technology
Technology R&D for best
in class process development & support
3 RF-SOI fabs
8” (2) and 12”
Continued strategic
investments & long term commitment
ST RF-SOI: enabling technology for 5G RF Front-End Modules
11
2000
2009
2013
2016
2019
ST RF-SOI History
H9SOI process available for 1st RF
Switch demonstrator
H9SOI RF Switch production Ramp-up
Introduction of H9SOIFEM
C65SOIFEM production
H9SOIFEM high vol production
5G sub-6GHz
5G mmWave
4G LTE-A
8’’ wafers
12’’ wafers
2020
SOIMMW
12’’ wafers
Rousset - France
CR200 (200mm) R8 (200mm)CR300 (300mm)
Crolles - France
SOI substrates in partnership with major suppliers
12
H9SOIFEM for 4G & 5G sub-6 GHz RF FEMs
H9SOIFEM (130nm lithography, 200mm wafer)
• Solid and proven RF-SOI technology
• High performance RF Switches with
Low Insertion Loss and High linearity
• Low Noise Figure LNA
• High Efficiency PA
• RF FEM Monolithic Integration
• Multiple back-end stack options for best performance/cost trade-off
• thick copper option for low loss Transmission Lines and High Q inductances
• High Resistivity and Trap Rich SOI substrates
Switch - continued RonCoff advancements over multiple generations
LNA – NMOS NFmin vs Frequency (Si meas vs model)
Vds=1.2V,Vgs=0.5-1V
13
C65SOIFEM (65nm lithography, 300mm wafer)
• High performance RF-SOI for 5G FEM:
• 5G LNA + Switch Integration
• Full copper back end
• High Resistivity and Trap Rich SOI substrates
Sub-6 GHz• 5GHz LNA ref. design
silicon measurement:• >15dB Gain
• < 1dB NF @ 5GHz
LNA ref. design NF vs Frequency
IDC=12.2mA, Vgs=0.48V, Vdd=1.2V, TR sub
NMOS Ft vs VgsSi measurement vs model
ST C65SOIFEM for 5G Sub-6GHz 14
• Innovative RF technologies (RF-SOI, FDSOI, BiCMOS) for 5G terminal and infrastructure
• Multiple band support from 5G sub-6 GHz to mmWave
• Flexible architecture partitioning, for best RF performance and silicon integration trade-off
• Long term technology roadmap & continued strategic investments
• High volume production & short cycle time
• High capacity RF-SOI fabs (8’’ and 12’’) in France
• Experienced supply chain handling billion units/year
• Dedicated customer support
• Technology, Design & DK support from fab experts & design specialists
• Assembly, Packaging, Testing services
ST Value as 5G RF Technology Partner 15
16
Thank you
for your attention !
STMicroelectronics - October 2019 - All rights reservedThe STMicroelectronics corporate logo is a registered trademark of the STMicroelectronics group of companies All other names are the property of their respective owners.
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