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s-yu-davydov documents
Documents
On the isotope effect in the relaxation model of electron-stimulated desorption
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Initial ion velocity in electron-stimulated desorption
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Calculation of the activation energy for surface self-diffusion of transition-metal atoms
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Photoelasticity and quadratic permittivity of wide-gap semiconductors
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Influence of temperature on the yield of ions desorbed as a result of electron transitions: Relaxation model
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Energy distribution of alkali-metal atoms under electron-stimulated desorption from the surface of oxidized refractory substrates
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Elastic properties of gallium and aluminum nitrides
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Evaluation of physical parameters for the group III nitrates: BN, AlN, GaN, and InN
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Effect of adsorption of alkali metal atoms on the work function of rutile
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On the nature of concentration thresholds for the electron-stimulated desorption of europium atoms from the oxidized tungsten surface
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On the relationship between the ionization potential and the work function: Metals
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Energy of substitution of Group-III and V elements for Si and C atoms in silicon carbide
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Effect of pressure on the elastic properties of silicon carbide
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Alkali metal adsorption on the gallium arsenide surface: A change in the work function
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Setup parameters controlling the growth rate of silicon carbide epitaxial layers in a vacuum
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Simple models of hydrogen adsorption on germanium
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Hydrogen adsorption on silicon
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Effect of a submonolayer metal film on band bending in a semiconductor substrate
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Effect of adsorption of group VI atoms on the silicon work function
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The energy levels in quantum wells formed at the contacts between cubic and hexagonal polytypes of silicon carbide
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Estimation of the energy characteristics of the 3C-SiC/2H-, 4H-, 6H-, and 8H-SiC heterojunctions
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