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housei documents
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Double layer structures of transparent conductive oxide suitable for solar cells: Ga-doped ZnO on undoped ZnO
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Mechanical and transparent conductive properties of ZnO and Ga-doped ZnO films sputtered using electron-cyclotron-resonance plasma on polyethylene naphtalate substrates
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PORTRAITS AND BIOGRAPHIES OF Members of the Medical & Surgical Profession OF GREAT BRITAIN AND IRELAND
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Nucleation and crystallization of Li2O–Nb2O5 ternary compound thin films co-sputtered from LiNbO3 and Li2O targets
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Morphological transition of Si[sub 1−x]Ge[sub x] films growing on Si(100). II. Synchrotron-radiation-excited chemical-vapor deposition: From two-dimensional growth to growth in the
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Synchrotron-radiation-excited epitaxy of Ge with GeH4
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Combinatorial characterization of transparent conductive properties of Ga-doped ZnO films cosputtered from electron cyclotron resonance and rf magnetron plasma sources
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Morphological switching in synchrotron-radiation-excited Ge homoepitaxy: Transition from kinetic roughening to smoothing
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Modification of transparent conductive ZnO and Ga-doped ZnO films by irradiation with electron cyclotron resonance argon plasma
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Real-time spectroellipsometric characterization of nucleation, islanding, and coalescence behavior of boron films grown by soft x-ray excited chemical vapor deposition
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Selective formation of competitive c-axis and a-axis oriented LiNbO[sub 3] epitaxial films on Al[sub 2]O[sub 3](1120)
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Origin of perfect selectivity of Si epitaxial growth through disilane molecular-beam epitaxy using synchrotron radiation
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Hydrogen induced electric conduction in undoped ZnO and Ga-doped ZnO thin films: Creating native donors via reduction, hydrogen donors, and reactivating extrinsic donors
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Contribution of dangling-bond regeneration channels in the synchrotron-radiation-excited epitaxy of Si from SiH[sub 2]Cl[sub 2]
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Short-period Si[sub n]Ge[sub m] strained-layer superlattices grown from gas sources by synchrotron-radiation-excited chemical-beam epitaxy
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Threshold behavior in synchrotron-radiation-stimulated recrystallization during Si homoepitaxy on Si(100)