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april-s documents
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Theory of Modern Electronic Semiconductor Devices || Appendix B: Bulk Material Parameters
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Theory of Modern Electronic Semiconductor Devices || Overview of Semiconductor Device Trends
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Theory of Modern Electronic Semiconductor Devices || Semiconductor Heterostructures
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Theory of Modern Electronic Semiconductor Devices || Heterostructure Field-Effect Transistors
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Theory of Modern Electronic Semiconductor Devices || Heterostructure Bipolar Transistors
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Theory of Modern Electronic Semiconductor Devices || Transferred Electron Effects, Negative Differential Resistance, and Devices
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Theory of Modern Electronic Semiconductor Devices || Resonant Tunneling and Devices
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Theory of Modern Electronic Semiconductor Devices || Beyond CMOS: Future Approaches to Computing Hardware
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Theory of Modern Electronic Semiconductor Devices || Magnetic Field Effects in Semiconductors
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Theory of Modern Electronic Semiconductor Devices || Frontmatter
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Theory of Modern Electronic Semiconductor Devices || References
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Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part II. Interplay between chemistry and structure of layers
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Mixed Semiconductor Alloys for Optical Devices
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Personalized diagnostics and biosensors: a review of the biology and technology needed for personalized medicine
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Plasmonic Gallium Nanoparticles on Polar Semiconductors: Interplay between Nanoparticle Wetting, Localized Surface Plasmon Dynamics, and Interface Charge
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Demonstrating the Capability of the High-Performance Plasmonic Gallium–Graphene Couple
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Cysteamine-Based Functionalization of InAs Surfaces: Revealing the Critical Role of Oxide Interactions in Biasing Attachment
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Ga–Mg Core–Shell Nanosystem for a Novel Full Color Plasmonics
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Handbook of Crystal Growth || In Situ Characterization of Epitaxy
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Incorporation of Mg in GaN grown by plasma-assisted molecular beam epitaxy