Ehud (Udi) Tzuri , Chief Marketing Officer at Applied Materials Israel
Citation preview
1. The Shift to 3D IC Structures - Manufacturing and Process
Control ChallengesEhud TzuriChief Marketing OfficerChipEx-2012, May
2012 External Use
2. 300mmNOR NAND PVD Metal CVD Single-wafer E-beam New
materials: III-V, Ge inspection MORE Processing CVD: hidden
filmsINFLECTIONS DRAM 8F2 6F2 Atomic precision CMP Deposited resist
IN NEXT Bumping Flowable films Advanced 5 YEARS THAN Wafer-level
interconnect packaging Dry chemical Advanced patterning cleans
350nm 250nm 180nm 130nm 90nm 65nm 45nm 32nm 22nm 14nm 10nm Double
Patterning LASTDeep-UV Laser Lithography Epi Cu damascene 15 YEARS
High aspect ratio Etch Laser-based processing Patterning Films
Low-k dielectric 450mm Lamp-based Interface 3D Hi-K ALD Processing
CMP Sacrificial films management NAND DPN SiON gate Advanced
Universal ALD Reflow HPD transistor 2 External Use
3. Moores LawThe number of transistors on integrated circuits
doubles every two years In 1965, Gordon Moore sketched out his
prediction of the pace of silicon technology. Decades later, Moores
Law remains true, driven largely by Intels unparalleled silicon
expertise. (Source: Intel; Copyright 2005 Intel Corporation) How to
maintain cost-performance ?3 External Use
4. Complying with Moores Law Maintaining Cost-Performance
Shrink the feature size: ArF Immersion EUV Increase wafer size:
200mm 300mm 450mm Build vertically: 2D 3D4 External Use
5. Where is 3D Architecture Implemented? 3D Wafer level Memory
Transistor packaging V-NAND FinFET TSV5 External Use
6. Where is 3D Architecture Implemented? 3D Wafer level Memory
Transistor packaging V-NAND FinFET TSV6 External Use
7. Flash Roadmap* * The future is coming sooner than we
thoughtSource: J.Choi, Samsung, The 2nd International Memory
Workshop, May.16, 2010 External Use 7
8. From 2D to 3D Flash NAND Sourceline Wordlines Select gate A
folded, vertically stacked NAND string Cells are generated inside a
high-aspect-ratio (HAR) contact hole Benefits: Memory density is
less dependent on patterning Reduced coupling between memory cells
Cost scalabilityImage Sources:Left:IMFT 25-nm MLC NAND: technology
scaling barriers broken, DONG YI Technology Group, Published
Date:2010-3-23Right: Pipe-shaped BiCS Flash Memory with 16 Stacked
Layers/Ryota Katsumata - 2009 Symposium on VLSI Technology External
Use
9. 3D NAND Process Challenges TEM Image of 69-Layer
Oxide/Nitride Stack Surface / interface roughness Top Film stress
control for low wafer bow Fastest cycle time Bottom Excellent
stacked particle performance Etch profile - ability to open HAR SEM
X-section of double etched stack stacks Complex multi-stack
requires precise process monitoring thickness, RI, etch profile and
defects Source: Pipe-shaped BiCS Flash Memory with 16 Stacked
Layers/Ryota Katsumata - 2009 Symposium on VLSI Technology9
External Use
10. 3D NAND Metrology & Inspection Challenges Imaging of
HAR contact hole Slit & plate etch along its depth inspection
& imaging Charge Trap Embedded defects: material thickness Deep
in the stack & uniformity along contact depth10 External
Use
11. Where is 3D Architecture Implemented? 3D Wafer level Memory
Transistor packaging V-NAND FinFET TSV11 External Use
12. Planar vs. Trigate (FinFET) Transistor Benefits Gate
surrounds Si from 3 directions, thus, increasing control of over
channel reduced leakage Can operate at lower voltage with good
performance, reducing active power by >50%Source: Intel 22nm
Trigate announcement , 4/19/2011 External Use
13. FinFet Process ChallengesSpacer Gate Stack (high-k &
metal gate) Complete spacer removal from fin area Material
selectivity Material deposition thickness uniformity on vertical
walls Metal gate composition uniformity/stability FinFin Formation:
Precision etch STI Structural integrity (collapse, Oxide erosion,
thermal shock) Precise Recess to control fin Fin Junctions: height
Conformal doping Channel materials to increase on sidewalls
mobility 13 External Use
14. FinFET Process Control Challenges Lg Measurement of Lg gate
CD across the Fin height Lg Detection & Review of defects on
Fin sidewalls after gate etch Measurement of Fin sidewall angle to
control the 3D transistor width14 External Use
15. Transistor Roadmap: Applied Materials View Planar CMOS
FinFET III-V FinFET New Fin Gate Material Fin STI STI Oxide Oxide
No end in sight for Moores Law for the next decade15 External
Use
16. Where is 3D Architecture Implemented? 3D Wafer level Memory
Transistor packaging V-NAND FinFET TSV16 External Use
17. 3D Integration & TSV TSV is a process in which wafers
are: thinned, stacked & interconnected All flows include
creation of deep holes and filling them with Cu interconnectSource:
DAC, 2D Integrated Circuits, Wednesday, January 26, 2011 , Paul
McLellan / Source: Through-Silicon Via (TSV), Vol. 97,
0018-9219/$25.00 2009 IEEE No. 1, January 2009 | Proceedings of the
IEEE 17 External Use
18. TSV Process Control Challenges Ta/TaN/Au CVD-SiO2 Wafer
inspection for surface defects on TSV sidewalls and bottom Si
substrate InterlayerPassivation layer Bonding pad Adhesive Handle
wafer HAR SEM-based defect review for sidewall and bottom defects;
including over-etch18 External Use
19. Common Challenges Defects of importance are located in the
3rd dimension; they need to be found & imaged Measurements of
the 3rd dimension (HAR, SWA) need to be performed Current state of
the art M&I tools have limitations to do so19 External Use
20. Possible Solutions SEM-based imaging Optical metrology
X-ray Destructive technologies20 External Use
21. Possible Solutions The Leading Candidate SEM-based imaging
3D imaging E-beam inspection techniques with SEM (Voltage Contrast)
(Resolution)21 External Use
22. Summary The future is here 3D transistors and TSV are
already a reality, VNAND is just around the corner 3D Key
challenges are related (mainly) to process integration and process
control Traditional process control solutions might not be
sufficient E-Beam based techniques have the potential to become the
process control enablers22 External Use