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Part 1: Material Science Crystal Geometry Crystal Structure and Defects Bonds in Solids Electron Theory of Metals Diffusion in Solids Contents

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Page 1: Materi 2 bahan kontruksi dan korosi

Part 1: Material Science

Crystal Geometry

Crystal Structure and Defects

Bonds in Solids

Electron Theory of Metals

Diffusion in Solids

Contents

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All crystalline materials on an atomic scale

contain large numbers of various defects or imperfections. .

Many of the properties of materials are profoundly sensitive to deviations from crystalline perfection; the influence is not always adverse, often specific characteristics are deliberately

fashioned by the introduction of controlled amounts or numbers of particular defects.

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By “crystalline defect” is meant a lattice irregularity

having one or more of its dimensions on the order of an atomic diameter. Classification of crystalline imperfections is frequently

made according to geometry or dimensionality of the defect.

Several different imperfections are point defects (those associated with one or two atomic

positions), linear (or one-dimensional) defects, interfacial defects, or boundaries (two-dimensional).

Impurities in solids may exist as point defects.

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The simplest of the point defects is a vacancy, or

vacant lattice site,

one normally occupied from which an atom is missing.

All crystalline solids contain vacancies and, in fact, it is not possible to create such a material that is free of these defects.

Point Defects: VACANCIES

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The necessity of the existence of vacancies is

explained using principles of thermodynamics;

in essence, the presence of vacancies increases the entropy (i.e., the randomness) of the crystal.

Point Defects: VACANCIES

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The equilibrium number of vacancies for a

given quantity of material depends on and increases with temperature according to

N is the total number of atomic sites,

Qv is the energy required for the formation of a vacancy,

T is the absolute temperature in Kelvins,

k is the gas or Boltzmann’s constant = 1.38✕10-23 J/atom-K, or 8.62✕10-5eV/atom-K, depending on the units of Qv.

Point Defects: VACANCIES

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For most metals, the fraction of vacancies Nv/N just

below the melting temperature is on the order of 10-4;

that is, one lattice site out of 10,000 will be empty.

A number of other material parameters have an similar exponential dependence on temperature.

Point Defects: VACANCIES

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A self-interstitial is an atom from the crystal that is

crowded into an interstitial site,

a small void space that under ordinary circumstances is not occupied.

Point Defects: SELF-INTERSTITIALS

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In metals, a self-interstitial introduces relatively large

distortions in the surrounding lattice because the atom is substantially larger than the interstitial position in which it is situated.

Consequently, the formation of this defect is not highly probable, and it exists in very small concentrations, which are significantly lower than for vacancies.

Point Defects: SELF-INTERSTITIALS

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3

• Vacancies: -vacant atomic sites in a structure.

Vacancydistortion of planes

• Self-Interstitials: -"extra" atoms positioned between atomic sites.

self-interstitialdistortion

of planes

POINT DEFECTS

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Point Defects: Vacancy and Self-interstitials

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Point Defects: Vacancy and Self-interstitials

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Point Defects: Vacancy and Self-interstitials

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• Low energy electron microscope view of a (110) surface of NiAl. • Increasing T causes surface island of atoms to grow. • Why? The equil. vacancy conc. increases via atom motion from the crystal to the surface, where they join the island.

Island grows/shrinks to maintain equil. vancancy conc. in the bulk.

Reprinted with permission from Nature (K.F. McCarty, J.A. Nobel, and N.C. Bartelt, "Vacancies in Solids and the Stability of Surface Morphology", Nature, Vol. 412, pp. 622-625 (2001). Image is 5.75 mm by 5.75 mm.) Copyright (2001) Macmillan Publishers, Ltd.

OBSERVING EQUIL. VACANCY CONC.

Click on image to animate

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• Frenkel Defect --a cation is out of place.

• Shottky Defect --a paired set of cation and anion vacancies.

Shottky Defect:

Frenkel Defect

• Equilibrium concentration of defects ~ eQD /kT

Adapted from Fig. 13.20, Callister 5e. (Fig. 13.20 is from W.G. Moffatt, G.W. Pearsall, and J. Wulff, The Structure and Properties of Materials, Vol. 1, Structure, John Wiley and Sons, Inc., p. 78.) See Fig. 12.21, Callister 6e.

DEFECTS IN CERAMIC STRUCTURES

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Two outcomes if impurity (B) added to host (A): • Solid solution of B in A (i.e., random dist. of point defects)

• Solid solution of B in A plus particles of a new phase (usually for a larger amount of B)

OR

Substitutional alloy (e.g., Cu in Ni)

Interstitial alloy (e.g., C in Fe)

Second phase particle --different composition --often different structure.

POINT DEFECTS IN ALLOYS

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A pure metal consisting of only one type of atom

just isn’t possible;

impurity or foreign atoms will always be present, and some will exist as crystalline point defects.

In fact, even with relatively sophisticated techniques, it is difficult to refine metals to a purity in excess of 99.9999%.

At this level, on the order of 1022 to 1023 impurity atoms will be present in one cubic meter of material.

IMPURITIES IN SOLIDS

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Most familiar metals are not highly pure; rather, they

are alloys,

in which impurity atoms have been added intentionally to impart specific characteristics to the material.

Ordinarily, alloying is used in metals to improve mechanical strength and corrosion resistance.

IMPURITIES IN SOLIDS

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For example, sterling silver is a 92.5% silver 7.5%

copper alloy.

In normal ambient environments, pure silver is highly corrosion resistant, but also very soft.

Alloying with copper significantly enhances the mechanical strength without depreciating the corrosion resistance appreciably.

IMPURITIES IN SOLIDS

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The addition of impurity atoms to a metal will result

in the formation of a solid solution and/or a new second phase, depending on the kinds of impurity, their concentrations, and the temperature of the alloy.

IMPURITIES IN SOLIDS

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Several terms relating to impurities and solid solutions: solute and solvent.

“Solvent” represents the element or compound that is present in the greatest amount;

on occasion, they are also called host atoms.

“Solute” is used to denote an element or compound present in a minor concentration.

IMPURITIES IN SOLIDS

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A solid solution forms when, as the solute atoms are

added to the host material, the crystal structure is maintained, and no new structures are formed.

A solid solution is compositionally homogeneous;

the impurity atoms are randomly and uniformly dispersed within the solid.

Solid Solutions

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Impurity point defects are found in solid solutions,

of which there are two types: substitutional and interstitial.

For the substitutional type, solute or impurity atoms replace or substitute for the host atoms.

Solid Solutions

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Solid Solutions

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Several features of the solute and solvent atoms

that determine the degree to which the former dissolves in the latter:

1. Atomic size factor.

2. Crystal structure.

3. Electronegativity.

4. Valences.

Solid Solutions

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1. Atomic size factor.

When the difference in atomic radii between the two atom types is < ±15%, appreciable quantities of a solute may be accommodated in this type of solid solution

Otherwise the solute atoms will create substantial lattice distortions and a new phase will form.

Solid Solutions

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2. Crystal structure.

For appreciable solid solubility the crystal structures for metals of both atom types must be the same.

Solid Solutions

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3. Electronegativity.

The more electropositive one element and the more electronegative the other, the greater is the likelihood that they will form an inter-metallic compound instead of a substitutional solid solution.

beda Compound dan Solution => Text Book

Solid Solutions

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4. Valences.

a metal will have more of a tendency to dissolve another metal of higher valence than one of a lower valence. -> Solvent

Solid Solutions

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Example: substitutional solid solution of Cu-Ni.

They are completely soluble in one another at all proportions. the atomic radii: Cu = 0.128 and Ni = 0.125 nm,

both have the FCC crystal structure,

their electronegativities are 1.9 and 1.8

the most common valences are Cu =+1, Ni =+2.

Solid Solutions

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For interstitial solid solutions, impurity

atoms fill the voids or interstices among the host atoms (see Figure).

For metallic materials that have relatively high atomic packing factors, these interstitial positions are relatively small. Consequently, the atomic diameter of an

interstitial impurity must be substantially smaller than that of the host atoms.

Solid Solutions

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Normally, the maximum allowable concentration of

interstitial impurity atoms is low (less than 10%).

Even very small impurity atoms are ordinarily larger than the interstitial sites, and as a consequence they introduce some lattice strains on the adjacent host atoms.

Solid Solutions

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Carbon forms an interstitial solid solution when

added to iron;

the maximum concentration of carbon is about 2%.

The atomic radius of the C 0.071 nm << Fe 0.124 nm.

Solid solutions are also possible for ceramic materials.

Solid Solutions

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A dislocation is a linear or one-dimensional defect

around which some of the atoms are misaligned.

(see Figure 4.3):

an extra portion of a plane of atoms, or half-plane, the edge of which terminates within the crystal.

DISLOCATIONS—LINEAR DEFECTS

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a linear defect that centers around the line that is

defined along the end of the extra half-plane of atoms.

sometimes termed the dislocation line.

For the Figure 4.3 is perpendicular to the plane of the page.

Edge Dislocation

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Within the region around the dislocation line

there is some localized lattice distortion. The atoms above the dislocation line in Figure 4.3

are squeezed together, those below are pulled apart; this is reflected in the slight curvature for the

vertical planes of atoms as they bend around this extra half-plane.

The magnitude of this distortion decreases with distance away from the dislocation line; at positions far removed, the crystal lattice is

virtually perfect.

Edge Dislocation

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Sometimes represented by the symbol ⊥

also indicates the position of the dislocation line.

May also be formed by an extra half-plane of atoms that is included in the bottom portion of the crystal;

its designation is a ⊤.

Edge Dislocation

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formed by a shear stress that is applied to produce

the distortion shown in Figure 4.4a:

the upper front region of the crystal is shifted one atomic distance to the right relative to the bottom portion.

Screw Dislocation

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The atomic distortion associated with a screw

dislocation is also linear and along a dislocation line, line AB in Figure 4.4b.

The screw dislocation derives its name from the spiral or helical path or ramp that is traced around the dislocation line by the atomic planes of atoms.

Sometimes the symbol ↻ is used to designate a screw dislocation.

Screw Dislocation

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Screw Dislocation

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Most dislocations found in crystalline materials are

probably neither pure edge nor pure screw, but exhibit components of both types; these are termed mixed dislocations.

Mixed Dislocations

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Mixed Dislocations

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Mixed Dislocations

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The magnitude and direction of the lattice distortion

associated with a dislocation is expressed in terms of a Burgers vector, denoted by a b. Burgers vectors are indicated in Figures 4.3 and 4.4 for

edge and screw dislocations, respectively.

Burgers vector

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The nature of a dislocation is defined by the relative

orientations of dislocation line and Burgers vector.

For an edge, they are perpendicular

For a screw, they are parallel

They are neither perpendicular nor parallel for a mixed dislocation.

Burgers vector

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Even though a dislocation changes direction

and nature within a crystal (e.g., from edge to mixed to screw), the Burgers vector will be the same at all points along its line. For example, all positions of the curved dislocation in

Figure 4.5 will have the Burgers vector shown.

For metallic materials, the Burgers vector for a dislocation will point in a close-packed crystallographic direction and will be of magnitude equal to the inter-atomic spacing.

Burgers vector

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Virtually all crystalline materials contain

some dislocations that were introduced during solidification, during plastic deformation, as a consequence of thermal stresses that result

from rapid cooling. Dislocations are involved in the plastic

deformation of crystalline materials, both metals and ceramics.

They have also been observed in polymeric materials.

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Interfacial defects are boundaries that have two

dimensions and normally separate regions of the materials that have different crystal structures and/or crystallographic orientations.

INTERFACIAL DEFECTS

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These imperfections include

external surfaces,

grain boundaries,

twin boundaries,

stacking faults,

phase boundaries.

INTERFACIAL DEFECTS

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One of the most obvious boundaries is the

external surface, along which the crystal structure terminates.

Surface atoms are not bonded to the maximum number of nearest neighbors, therefore are in a higher energy state than the

atoms at interior positions. The bonds of these surface atoms that are not

satisfied give rise to a surface energy, expressed in units of energy per unit area (J/m2 or erg/cm2).

INTERFACIAL DEFECTS:

External Surfaces

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To reduce surface energy, materials tend to

minimize, if at all possible, the total surface area.

For example, liquids assume a shape having a minimum area—the droplets become spherical.

Of course, this is not possible with solids, which are mechanically rigid.

INTERFACIAL DEFECTS:

External Surfaces

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as the boundary separating two small grains or

crystals having different crystallographic orientations in polycrystalline materials. A grain boundary is represented schematically from

an atomic perspective in Figure 4.7.

Within the boundary region, which is probably just several atom distances wide, there is some atomic mismatch in a transition from the crystalline orientation of one grain to that of an adjacent one.

INTERFACIAL DEFECTS:

Grain Boundaries

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INTERFACIAL DEFECTS:

Grain Boundaries

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Various degrees of crystallographic misalignment

between adjacent grains are possible (Figure 4.7).

When this orientation mismatch is slight, on the order of a few degrees, then the term small- (or low- ) angle grain boundary is used.

These boundaries can be described in terms of dislocation arrays.

INTERFACIAL DEFECTS:

Grain Boundaries

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One simple small angle grain boundary is formed

when edge dislocations are aligned in the manner of Figure 4.8.

This type is called a tilt boundary; the angle of misorientation, Θ, is also indicated in the figure.

When the angle of misorientation is parallel to the boundary, a twist boundary results, which can be described by an array of screw dislocations.

INTERFACIAL DEFECTS:

Grain Boundaries

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The atoms are bonded less regularly along a grain

boundary (e.g., bond angles are longer), and consequently, there is an interfacial or grain boundary energy similar to the surface energy described above.

The magnitude of this energy is a function of the degree of misorientation, being larger for high-angle boundaries.

INTERFACIAL DEFECTS:

Grain Boundaries

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Grain boundaries are more chemically reactive than

the grains themselves as a consequence of this boundary energy.

Impurity atoms often preferentially segregate along these boundaries because of their higher energy state.

INTERFACIAL DEFECTS:

Grain Boundaries

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The total interfacial energy is lower in large or

coarse-grained materials than in fine-grained ones, since there is less total boundary area in the former.

Grains grow at elevated temperatures to reduce the total boundary energy.

INTERFACIAL DEFECTS:

Grain Boundaries

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In spite of the disordered arrangement of atoms and

lack of regular bonding along grain boundaries,

a polycrystalline material is still very strong; cohesive forces within and across the boundary are present.

The density of a polycrystalline specimen is virtually identical to that of a single crystal of the same material.

INTERFACIAL DEFECTS:

Grain Boundaries

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A twin boundary is a special type of grain boundary

across which there is a specific mirror lattice symmetry; that is, atoms on one side of the boundary are located

in mirror-image positions of the atoms on the other side (Figure 4.9).

The region of material between these boundaries is appropriately termed a twin.

INTERFACIAL DEFECTS:

Twin Boundaries

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INTERFACIAL DEFECTS:

Twin Boundaries

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Twins result from atomic displacements that are

produced

from applied mechanical shear forces (mechanical twins),

and also during annealing heat treatments following deformation (annealing twins).

INTERFACIAL DEFECTS:

Twin Boundaries

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Twinning occurs on a definite crystallographic plane

and in a specific direction, both of which depend on the crystal structure.

Annealing twins are typically found in metals that have the FCC crystal structure,

Mechanical twins are observed in BCC and HCP metals.

INTERFACIAL DEFECTS:

Twin Boundaries

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Other possible interfacial defects include stacking faults,

phase boundaries,

ferromagnetic domain walls.

Stacking faults are found in FCC metals when there is an interruption in the ABCABCABC . . . stacking sequence of close-packed planes.

Miscellaneous Interfacial Defects

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Phase boundaries exist in multiphase materials

across which there is a sudden change in physical and/or chemical characteristics.

For ferromagnetic and ferrimagnetic materials, the boundary that separates regions having different directions of magnetization is termed a domain wall.

Miscellaneous Interfacial Defects

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Associated with each of the defects is an interfacial

energy,

the magnitude of which depends on boundary type, and which will vary from material to material.

Normally, the interfacial energy will be greatest for external surfaces and least for domain walls.

Miscellaneous Interfacial Defects

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The surface energy of a single crystal depends on

crystallographic orientation.

Does this surface energy increase or decrease with an increase in planar density. Why?

Interfacial Defects

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Other defects exist in all solid materials that are

much larger:

pores, cracks, foreign inclusions, and other phases.

They are normally introduced during processing and fabrication steps.

BULK OR VOLUME DEFECTS

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Every atom in a solid material is vibrating

very rapidly about its lattice position within the crystal.

These atomic vibrations may be thought of as imperfections or defects.

At any instant of time not all atoms vibrate at the same frequency and amplitude, nor with the same energy.

At a given temperature there will exist a distribution of energies for the constituent atoms about an average energy.

ATOMIC VIBRATIONS

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Over time the vibrational energy of any

specific atom will also vary in a random manner.

With rising temperature, this average energy increases, in fact, the temperature of a solid is really just a

measure of the average vibrational activity of atoms and molecules.

At room temperature, a typical vibrational frequency is on the order of 1013 vibrations per second, whereas the amplitude is a few thousandths of a nanometer.

ATOMIC VIBRATIONS

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Many properties and processes in solids are

manifestations of this vibrational atomic motion.

For example, melting occurs when the vibrations are vigorous enough to rupture large numbers of atomic bonds.

ATOMIC VIBRATIONS

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Microscopic Examination

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Optical Microscopy

Microscopic Examination

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Optical Microscopy

The upper limit of an optical microscope is approximately 2000 times.

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Transmission Electron Microscopy (TEM)

a specimen to be examined must be prepared in the form of a very thin foil;

Magnifications approaching 1,000,000✕ are possible with transmission electron microscopy,

which is frequently utilized in the study of dislocations.

Electron Microscopy

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A more recent and extremely useful investigative

tool.

The surface of a specimen to be examined is scanned with an electron beam, and the reflected (or back-scattered) beam of electrons is collected, then displayed on a video monitor.

Scanning Electron Microscopy (SEM)

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The surface may or may not be polished and

etched, but it must be electrically conductive; a very thin metallic surface coating must be

applied to nonconductive materials.

Magnifications ranging from 10 to in excess of 50,000 times are possible, as are also very great depths of field.

Accessory equipment permits qualitative and semiquantitative analysis of the elemental composition of very localized surface areas.

Scanning Electron Microscopy (SEM)

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It differs from the optical and electron microscopes.

neither light nor electrons is used to form an image.

the microscope generates a topographical map, on an atomic scale, that is a representation of surface features and characteristics of the specimen being examined.

Scanning Probe Microscopy (SPM)

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Some of the features : Examination on the nanometer scale is possible

magnifications as high as 109 are possible;

Three-dimensional magnified images are generated that provide topographical information about features of interest.

may be operated in a variety of environments (e.g., vacuum, air, liquid); thus, a particular specimen may be examined in its most suitable environment.

Scanning Probe Microscopy (SPM)

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Scanning Probe Microscopy (SPM)

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Microscopic Examination

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Microscopic Examination

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Grain size number is used extensively in the

specification of steels.

The grain size may be estimated by using an intercept method.

ASTM method

GRAIN SIZE DETERMINATION

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Intercept method Straight lines all the same length are drawn through

several photomicrographs that show the grain structure.

The grains intersected by each line segment are counted;

The line length is then divided by an average of the number of grains intersected, taken over all the line segments.

The average grain diameter is found by dividing this result by the linear magnification of the photomicrographs.

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The American Society for Testing and Materials

(ASTM) method. Prepared properly the specimen to reveal the grain

structure; photograph at a magnification of 100✕.

Compare with the chart provided by ASTM.

Express the grain size as the grain size number of the chart that most nearly matches the grains in the micrograph.

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The rationale:

Let n represent the grain size number, and N the average number of grains per square inch at a magnification of 100✕.

These two parameters are related to each other through the expression

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Part 2: Material Properties

Mechanical Properties

Thermal Properties

Electrical and Magnetic Properties

Superconductivity

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Part 3: Material Engineering Alloy Systems Phase Diagrams and Phase Transformations Heat Treatment Deformation of Materials Corrosion Organic Materials: Polymers and Elastomers Wood Composites

Nano structured Materials