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The top documents tagged [nm sio]
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Copyright 2011 Elsevier Inc. All rights reserved. Chapter 2 R. Nagarajan, S. Awad and K.R. Gopi
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Forschungszentrum Jülich in der Helmholtz-Gemeinschaft CWRF2008 RF Power improvement of AlGaN/GaN based HFETs and MOSHFETs A.Fox, M. Marso CWRF2008 CERN
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Optical near-field control of nanoresonators
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Near Field Optics Group OMR ICB - Université de Bourgogne Benoit Cluzel, Loïc
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Savas Kaya and Ahmad Al-Ahmadi School of EE&CS Russ College of Eng & Tech e-mail:
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Search for Optimum and Scalable COSMOS
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Atomistic Simulation of Carbon Nanotube FETs Using Non-Equilibrium Green’s Function Formalism Jing Guo 1, Supriyo Datta 2, M P Anantram 3, and Mark Lundstrom
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Green Transistor for 10X Lower IC Power ? Chenming Hu University of California, Berkeley Supported by: DARPA STEEP, FCRP-MSD
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ITRI Jassy Wang
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Chris A. Mack, Fundamental Principles of Optical Lithography, (c) 2007 1 Figure 4.1 Film stack showing (a) the geometry for the standing wave derivation,
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® Logic Process Development at Intel PhD Fellowship Forum October 21, 2004 Mark Bohr Intel Senior Fellow Director of Process Architecture & Integration
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Nanoimprint lithography (NIL) 1.UV-curable NIL. 2.Resists for UV-NIL. 3.Mold fabrication for thermal and UV-NIL. ECE 730: Fabrication in the nanoscale:
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Simulations of sub-100nm strained Si MOSFETs with high- gate stacks Lianfeng Yang, Jeremy Watling *, Fikru Adamu-Lema, Asen Asenov and John Barker Device
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CONFIDENTIAL – Property of Optical Dynamics Corporation, Distribution Prohibited OPTICAL DYNAMICS Vision – Passion - Innovation
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