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AEC LAB MANUAL
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Different Resistor Types: Carbon film resistors:
The size of the resistor decides its power rating (i.e., the maximum power it can dissipate without burning). Power rating from the top of the graph: 1/8 W 1/4 W 1/2 W
Metal film resistors: Used when a higher tolerance (more accurate value) is needed.
Power rating from the top of the graph: 1/8 W (tolerance ±1%) 1/4 W (tolerance ±1%) 1 W (tolerance ±5%) 2 W (tolerance ±5%)
Reading resistor values from the colored bands:
Single-In-Line (SIL) Resistor network:
Variable Resistors:
Wirewound resistors:
Ceramic (or cement) resistor:
Thermistor (thermally sensitive resistor ):
SMD resistors (Surface-Mount Device):
Different Capacitor Types: Ceramic Capacitors: Limited to quite small values, but have high voltage ratings. They range from 1pF to 0.47µF and are not polarized.
Reading Ceramic Capacitor values:
For the
num ber:
Mult iply
by: LETTER
TOLERANCE
1 0 pF or LESS
TOLERANCE
OVER 1 0 pF
0 1 B + / - 0.1pF
1 10 C + / -0.25pF
2 100 D + / - 0.5pF
3 1000 F + / - 1.0pF + / - 1%
4 10,000 G + / - 2.0pF + / - 2%
5 100,000 H + / - 3%
J + / - 5%
8 0.01 K + / - 10%
9 0.1 M + / - 20%
Example: 102 means 10 (and two zeroes) 00 or 1,000 pF or .001uF. Electrolytic Capacitors (Electrochemical type capacitors): Used for all values above 0.1µF. Electrolytics have lower accuracy and temperature stability than most other types and are almost always polarised. It's usually best to only use an electrolytic when no other type can be used, or for all values over 100µF.
From the left to right: 1µF (50V) 47µF (16V) 100µF (25V) 220µF (25V) 1000µF (50V)
Tantalum Capacitors: Tantalum capacitors pack a large capacity into a relatively small and tough package compared to electrolytics, but have much smaller voltage ratings. They are often polarized and range from 0.1µF to 100µF.
From the left to right: 0.33 µF (35V) 0.47 µF (35V) 10 µF (35V)
Polyester Film Capacitors (Green Caps): Ranging from 0.01µF to 5µF. They are similar to ceramics with some larger values and a slightly larger construction. They are not polarized.
Metallized Polyester Film Capacitors:
SMD Capacitors:
Variable Capacitors:
Different Inductor Types: Inductors:
Reading Inductor values from color codes:
High Frequency Coils (ferrite core):
The Toroidal Coil:
Other interesting components:
Diodes:
LED (Light Emitting Diodes):
Transistors:
ICs (Integrated Circuits):
Pin Numbers:
Multimeters (Analog and Digital):
K. S School of Engineering and Management
Department of Electronics and Communication Engineering
A LAB MANUAL ON
ANALOG ELECTRONICS
Subject Code: 10ESL37
(As per VTU Syllabus)
PREPARED BY
Staff members :
Gopalakrishna Murthy C R
Sanjay Naik
Vinay R
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 1
CONTENTS
EXPT.
NO. NAME OF THE EXPERIMENT
PAGE
NO.
01 Testing of Half wave, full wave and bridge rectifier circuits with and without Capacitor filter.
01
02 Testing of Clamping circuits for Positive and Negative clamping
10
03 Testing of Diode Clipping circuits (Single/Double ended)
for peak clipping, peak detection. 16
04 RC coupled amplifier using BJT and FET 23
05 Testing for the performance of BJT- Hartley oscillator /
Colpitt’s oscillator for RF range fo > 100KHz. 31
06 Testing for the performance of BJT-Crystal oscillator for fo > 100KHz.
38
07 Wiring and testing for the performance of BJT-RC phase shift oscillator for fo < 10Khz.
41
08 Wiring of two stage BJT Voltage series feedback amplifier
45
09 Verification of Thevenin’s theorem and maximum power transfer theorem for DC circuits.
51
10 Characteristics of Series and parallel resonance circuits. 55
11 Wiring of BJT Darlington emitter follower with and without
bootstrapping 59
12 Testing of a transformer less Class-B push pull power amplifier and determination of its conversion efficiency.
63
13 Bibliography 65
14 Vivo-voce questions 66
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 2
Ex.No:01 HALF WAVE, FULL WAVE AND BRIDGE RECTIFIER
a) HALF WAVE RECTIFIER
AIM:
To study Half Wave Rectifier and to calculate ripple factor, efficiency and
regulation with filter and without filter.
COMPONENTS REQUIRED:
Sl. No. Components Details Range/Specification Qty
1. Diodes BY127/IN4007 1 No.
2. Capacitor 0.1µf, 100µf Each 1 No.
3. Power Resistance Board (DRB) - 1 No.
4. Step down Transformer 12 -0-12 1 No.
5. CRO, Multimeter, milli ammeter, Connecting Board, wires and etc.
THEORY:
Rectifier circuits are used to convert AC in DC. Half wave rectifier circuit
diode (rectifying element) conducts only during positive half cycle of input ac
supply. The negative half cycles of ac supply are eliminated from the output. The dc
output waveform is expected to be a straight line but the half wave rectifier gives
output in the form of positive sinusoidal pulses. Thus the output is called pulsating
dc.
In Full wave rectifier both positive and negative half cycles of AC inputs are
converted in to pulsating DC output. Capacitor is used as a filtering element to
remove ac components from output and to convert pulsating DC in to Constant DC .
CIRCUIT DIAGRAM:
a) HALF WAVE RECTIFIER WITHOUT FILTER CAPACITOR
C2
0.1µF BY127
A K
RL
AC (230V/50HZ)
12V
12V
0
Step down Transformer
A
Ammeter(0-250mA)
+ -
VODC VOAC
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 3
Note: connect Voltmeter/Multimeter across load Resistor to measure VODC and CRO
terminals to observe the output wave forms.
b) HALF WAVE RECTIFIER WITH FILTER CAPACITOR
DESIGN:
VVrmsIN 12
VVV INrmsINpeak 97.162
V4.5/VV mDCO
Given V5V DCO
mA100I DCO
50I/VR DCODCOL
Ripple = r = Vo rms / VO DC = 1.21
Design for the filter capacitor
Ripple = 1/ (23 f C RL)
Given r = 0.25
C = 1/(23 f r RL)
RL = 50
f = 50Hz
=95.43F 100F
Efficiency = output Power (PDC) /Input Power (PAC)
(I2DC * RL) / [(Irms)2 * (RL + RF + Rs)]
≈ 2 (Vodc)2/(Vi rms)2 ≈ 40.6%
C2
0.1µF BY127
A K
RL
AC (230V/50HZ)
12V
12V
0
Step down Transformer
A
Ammeter(0-250mA)
+ -
100µF
+
-
C1
VODC VOAC
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 4
Where Irms = Im/2 & Im = Vm/( RL + RF + Rs)
Regulation % Regulation = 100FL
FLNL
V
VV
Where VNL = Vo(dc) & VFL = Vo(dc) - Idc (Rf + Rs) or VFL = Idc * RL
Rf = Diode forward Resistance & Rs = Transformer Secondary Resistance.
PROCEDURE:
1. Connections are made as shown in the circuit diagram
2. Set say 100Ω in DRB and Switch on the AC power supply 3. Observe the wave form on CRO across the load resistor
4. Note down RL, IDC, VODC, VINrms, and VOrms in the tabular column for different load resistances. Don’t set zero resistance in DRB at any time.
5. Calculate the ripple and efficiency and Regulation for each load resistance.
6. With C filter calculate regulation and Compare the ripple factor rtheoretical with rpractical for the design values of RL and Capacitor.
TABULAR COLUMN:
Sl.
No. RL IDC
VO
(DC)
VIN
(AC)
VO
(AC) Ripple Efficiency Regulation
Result:
(Without filter) Ripple = rtheoretical = 1.21 rpractical =___
(With Filter) rtheoretical = 1/ (23 f C RL) = 0.25 for C= 100F, r practical =___
Ripple factor = rpractical = Vorms/ Vodc
Efficiency = theoritical = 40.6% practical ≈ [2 (Vodc)2]/(Vi rms)2
Regulation = % Regulation = 100FL
FLNL
V
VV
Where VNL = no load voltage = voltage across output by removing load resistance.
VFL = Full load voltage = Voltage across output with load resistance.
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 5
WAVEFORMS:
20
0 t
- 20
Vo (Without Filter)
0 t
Vo (with filter)
0 t
FULL WAVE RECTIFIER
AIM:
To study the full wave rectifier and to calculate ripple factor and efficiency
and Regulation with filter and without filter.
COMPONENTS REQUIRED:
Sl. No. Components Details Specification Qty
1. Diodes BY127/IN4007 2 Nos.
2. Capacitor 0.1µf, 470µf Each 1 No.
3. Power Resistance Board (DRB) 1 No.
4. Step down Transformer 12 V 1 No.
5. CRO, Multimeter, Milli ammeter, Connecting Board and etc.
THEORY:
The center tapped full wave rectifier circuit is similar to a half wave rectifier
circuit, using two diodes and a center tapped transformer. Both the input half cycles
are converted into unidirectional pulsating DC.
VC
VIN
VO
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 6
CIRCUIT DIAGRAM:
FULL WAVE RECTIFIER WITHOUT FILTER CAPACITOR
FULL WAVE RECTIFIER WITH FILTER CAPACITOR
DESIGN:
Vin rms = 12V
VVV INrmsINpeak 97.162
VO DC = 2Vm/ = 10.8V
Given VO DC = 10V
IO DC = 100mA
RL = VO DC / IO DC = 100
Ripple = r = Vo rms / VO DC = 0.48
Design for the filter capacitor
Ripple = 1/ (43 f C RL)
Given r =0 .06
C = 1/(43 f r RL)
Step down
C2
0.1UF BY127
A K
RL
AC (230V/50HZ)
12V
12V
0
Transformer
A
Ammeter (0-250mA)
+ -
VO(DC)
BY127
A K
VO (AC)
(230V/50HZ)
C2
0.1UF BY127
A K
RL
AC
12V
12V
0
Step down Transformer
A
Ammeter (0-250mA)
+ -
470UF
+
-
C1
VO(DC)
BY127
A K
VO(AC)
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 7
RL = 100
f = 50Hz
C = 470UF
Efficiency = PDC /PAC (I2DC * RL) / [(Irms)2 * (RL + RF +Rs)]
Where Irms = IM/√2 and IM = VM /(RL + RF +Rs)
Efficiency = ≈ (Vodc)2/(Vi rms)2
Regulation % Regulation = 100FL
FLNL
V
VV
Note: repeat the same procedure of HWR for calculating Regulation .
PROCEDURE:
1. Connections are made as shown in the circuit diagram
2. Switch on the AC power supply
3. Observe the wave form on CRO across the load resistor and measure the o/p amplitude and frequency.
4. Note down RL, IDC, VODC , Vinac, Voac in the tabular column for different load
resistances.
5. Calculate the ripple and efficiency and regulation for each load resistance.
6. Repeat the above procedure with filter capacitor.
TABULAR COLUMN:
Sl.
No. RL IDC VO (DC)
VIN
(AC) VO (AC) Ripple Efficiency Regulation
(Without filter) Ripple = rtheoretical = 0.48 rpractical =___
(With Filter) rtheoretical = 1/ (43 f C RL) = 0.06 for C= 470F, r practical =___
Ripple factor = rpractical = Vorms/ Vodc
Efficiency = theoritical = 81.2% practical ≈ (Vodc)2/(Vi rms)2
Regulation = % Regulation = 100FL
FLNL
V
VV
Where VNL = no load voltage = voltage across output by removing load resistance.
VFL = Full load voltage = Voltage across output with load resistance.
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 8
WAVEFORMS:
0 t
-
Vo (Without Filter)
0
t
Vo (with filter)
0 t
VC
VIN
VO
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 9
BRIDGE RECTIFIER
AIM:
To study the bridge rectifier and to calculate ripple factor and efficiency and
regulation with filter and without filter.
COMPONENTS REQUIRED:
Sl. No. Components Details Specification Qty
1. Diodes BY127/IN4007 4 Nos.
2. Capacitor 0.1µf, 470µf Each 1 No.
3. Power Resistance Board (DRB) 1 No.
4. Step down Transformer 12 V 1 No.
5. CRO, Multimeter, Milliammeter, Connecting Board
THEORY:
The bridge rectifier circuit is essentially a full wave rectifier circuit, using four
diodes, forming the four arms of an electrical bridge. To one diagonal of the bridge,
the ac voltage is applied through a transformer and the rectified dc voltage is taken
from the other diagonal of the bridge. The main advantage of this circuit is that it
does not require a center tap on the secondary winding of the transformer; ac
voltage can be directly applied to the bridge.
The bridge rectifier circuit is mainly used as a power rectifier circuit for
converting ac power to dc power, and a rectifying system in rectifier type ac
meters, such as ac voltmeter in which the ac voltage under measurement is first
converted into dc and measured with conventional meter.
CIRCUIT DIAGRAM:
BRIDGE RECTIFIER WITHOUT FILTER CAPACITOR
RL
- +
BRIDGE
1
4
3
2
C2
0.1UF
AC (230V/50HZ)
12V
12V
0
Step down Transformer
Vo
A
Ammeter(0-250mA)
+ -
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 10
BRIDGE RECTIFIER WITH FILTER CAPACITOR
DESIGN:
Vin rms = 12V
VVV INrmsINpeak 97.162
VO DC = 2Vm/ = 10.8V
Given VO DC = 10V and IO DC = 100mA
RL = VO DC / IO DC = 100
Ripple = r = Vo rms / VO DC = 0.48
Design for the filter capacitor
Ripple = 1/(43 f C RL)
Given r = .06
C = 1/(43 f r RL)
RL = 100 and f = 50Hz
C = 470UF
Efficiency
= PDC /PAC
= (I2DC * RL) / [(Irms)2 * (RL + RF)] OR = 0.812/(1+2Rf/ RL)
Where Irms = Im/2, & Im = Vm/(2Rf+RL)
Regulation % Regulation = 100FL
FLNL
V
VV
C1
470UF
RL
- +
BRIDGE
1
4
3
2
C2
0.1UF
AC(230V/50HZ)
12V
12V
0
Step downTransformer
Vo
A
Ammeter(0-250mA)
+ -
+ -
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 11
PROCEDURE:
1. Connections are made as shown in the circuit diagram
2. Switch on the AC power supply
3. Observe the wave form on CRO across the load resistor and measure the o/p amplitude and frequency.
4. Note down RL, IDC, VODC , Vinac, Voac in the tabular column for different load
resistances.
5. Calculate the ripple factor, efficiency and regulation for each load resistance.
6. Repeat the above procedure with filter capacitor.
TABULAR COLUMN:
Sl.
No.
RL IDC VO (DC) VIN
(AC) VO (AC) Ripple Efficiency Regulation
Calculations are same as FWR
WAVEFORMS:
Vin
20
t
0
- 20
Vo
Vo (Without Filter)
0 t
Vo (with filter)
VC
t
Observation and Result:
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 12
DIODE CLAMPING CIRCUITS
AIM: Testing of clamping circuits: positive /negative clamping.
COMPONENTS REQUIRED:
Sl.No Component Range Quantity
1 Resistor 100K 1
2 Diode 1N4001 2
3 Capacitor 1µF 1
4 DC variable Power supply (0-30) V 1
5 DSO - 1
6 Function Generator - 1
7 Connecting Wires - 1 set
Theory:
Clamper is a circuit that clamps a signal to a different DC level without changing the shape of
the applied signal. Clamping circuit introduces a DC level into an ac signal. The different types
of clampers are positive, negative and biased clampers. A clamping network must have a
capacitor, a diode and a load resistor. The magnitude R and C must be chosen such that time
constant RC is large enough to ensure that the voltage across the capacitor does not discharge
significantly during the interval when the diode is non conducting. By connecting suitable Dc
voltage in series with the diode, clamping level can be varied.
The clamper with a positive DC shift is called positive clamper (Negative peak clamper) and a
clamper with a negative DC shift is called negative clamper (Positive peak clamper).
Positive Peak Clamper: This pushes down the DC the positive peak of the input signal to level
above or below the reference level depending upon the DC offset voltage.
Negative Peak Clamper: This pushes down the DC the negative peak of the input signal to level
above or below the reference level depending upon the DC offset voltage.
Design:
Assume C, and for the clamping to occur select R such that RC T, where T is the period of the
input signal.
RC T ; Assume T = 2ms, let RC = 50T = 100ms
Let R= 100K C = 1µF
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 13
Positive peak clamper (Positive Reference)
Design:
Assume Vin = 10VP-P, Vref = 2V, VK = 0.6V
a. During the positive half of the input signal diode is forward biased D = ON
Applying KVL to the loop
Vin – VC – VK – VR = 0
VC = Vin– VK – VR
VC = 5V – 0.6V – 2V
VC = 2.4V
b. During the negative half of the input signal diode is reverse biased D = OFF
Applying KVL to the loop
Vin – VC – VO = 0
VO = Vin – VC
When Vin = 0V VO = -2.4V
Vin = 5V VO = 2.4V
Vin = -5V VO = -7.6V
The output varies between +2.4V to -7.6V
-8-7-6-5-4-3-2-1012345678
0 90 180 270 360 450
vi
vo
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 14
Positive peak clamper (Negative Reference)
Design:
Assume Vin = 10VP-P, Vref = 2V, VK = 0.6V
a. During the positive half of the input signal diode is forward biased D = ON
Applying KVL to the loop
Vin – VC – VK – VR = 0
VC = Vin– VK + VR
VC = 5V – 0.6V + 2V
VC = 6.4V
b. During the negative half of the input signal diode is reverse biased D = OFF
Applying KVL to the loop
Vin – VC – VO = 0
VO = Vin – VC
When Vin = 0V VO = -6.4V
Vin = 5V VO = -1.4V
Vin = -5V VO = -11.4V
The output varies between -1.4V to -11.4V
-12-11-10
-9-8-7-6-5-4-3-2-1012345678
0 90 180 270 360 450
vi
vo
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 15
Negative Peak Clamper (Negative Reference)
Design:
Assume Vin = 10VP-P, Vref = 2V, VK = 0.6V
a. During the negative half of the input signal diode is forward biased D = ON
Applying KVL to the loop
-Vin + VC + VK + VR = 0
VC = - (-Vin – VK – VR)
VC = - (-5V + 0.6V + 2V)
VC = 2.4V
b. During the positive half of the input signal diode is reverse biased D = OFF
Applying KVL to the loop
Vin + VC – VO = 0
VO = Vin + VC
When Vin = 0V VO = 2.4V
Vin = 5V VO = 7.4V
Vin = -5V VO = -2.4V
The output varies between -2.4V to 7.6V
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
7
8
9
10
0 90 180 270 360 450
vi
vo
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 16
Negative Peak Clamper (Positive Reference)
Design:
Assume Vin = 10VP-P, Vref = 2V, VK = 0.6V
a. During the negative half of the input signal diode is forward biased D = ON
Applying KVL to the loop
-Vin + VC + VK – VR = 0
VC = - (Vin – VK – VR)
VC = - (-5V + 0.6V – 2V)
VC = 6.4V
b. During the positive half of the input signal diode is reverse biased D = OFF
Applying KVL to the loop
Vin + VC – VO = 0
VO = Vin + VC
When Vin = 0V VO = 6.4V
Vin = 5V VO = 11.4V
Vin = -5V VO = 1.4V
The output varies between 1.4V to 11.4V
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
7
8
9
10
11
12
0 90 180 270 360 450
vi
vo
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 17
Procedure:
1. Connect the circuit as shown in the figure.
2. Switch on the variable DC power supply, keeping voltage knobs at minimum position
and current knobs at maximum position and set reference voltage value.
3. Apply square wave or sine wave as an input signal at frequency say 1KHz and voltage
10V (p-p)
4. Observe the input and output waveforms on the CRO/DSO.
5. Vary the voltage and observe the clamping level of the output signal and note down the
value of clamping level.
Result:
AEC LAB MANUAL
Dept. of ECE Page 18
DIODE CLIPPING CIRCUITS
AIM:
Testing Of diode clipping (Single and Double Ended) circuits for peak clipping.
COMPONENTS REQUIRED:
Sl.No Component Range Quantity
1 Resistor 10K 1
2 Diode 1N4001 2
3 DC variable Power supply (0-30) V 1
4 DSO - 1
5 Function Generator - 1
6 Connecting Wires - 1 set
Clippers:
Clipping is defined as removing some part of the a.c signal without affecting the other parts of
the a.c signal. This kind of processing is useful in wave shaping, circuit protection and
communications. Clipper circuit are also called limiter circuit, are used to eliminate portions of
that are above or below a specified level. A simple application of a clipper is to limit the voltage
at the input to the electronic circuit so as to prevent the breakdown of the transistor in the circuit.
The circuit can be used to measure the frequency of the signal, so the amplitude is not an
important part of the signal.
Types of clipper circuits:
1. Series Clipper (Single ended and double ended)
2. Parallel Clipper (Single ended and double ended)
Design of R
The Value of R should be chosen as geometric mean of Rf and Rr of diode. Where Rf represents
dynamic forward resistance and Rr represents reverse resistance of the diode.
R = √ Say, Rf = 100Ω, Rr = 1MΩ, then R= 10KΩ.
AEC LAB MANUAL
Dept. of ECE Page 19
PARALLEL CLIPPERS (SINGLE ENDED)
PARALEL POSITIVE CLIPPER
Assume
Vi = 10VP-P, R = 10K, Vref = 1.4, VK = 0.6V Calculate VO.
Case 1: Case 1:
When Vi ≥ Vref + VK D = ON When Vi ≥ 1.4V + 0.6V D = ON VO = Vref + VK VO = 1.4V + 0.6V VO = 2V
Case 2: Case 2:
When Vi < Vref + VK D = OFF When Vi < 1.4V + 0.6V D = OFF VO = Vi VO = Vi
TRANSFER CAHARACTERISTICS
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
0 90 180 270 360 450 540 630 720 810
vi
vo
-6
-5
-4
-3
-2
-1
0
1
2
3
-6 -4 -2 0 2 4 6
AEC LAB MANUAL
Dept. of ECE Page 20
PARALLEL NEGATIVE CLIPPER
Assume
Vi = 10VP-P, R = 10K, Vref = 1.4, VK = 0.6V Calculate VO.
Case 1: Case 1:
When Vi - [Vref + VK] D = ON When Vi - [1.4V+ 0.6V] D = ON VO = - [Vref + VK] VO = - [1.4V+ 0.6V] VO = - 2V
Case 2: Case 2:
When Vi - [Vref + VK] D = OFF When Vi - [1.4V+ 0.6V] D = OFF VO = Vi VO = Vi
TRANSFER CHARACTERISTICS
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
0 90 180 270 360 450 540 630 720 810
vi
vo
-3
-2
-1
0
1
2
3
4
5
6
-6 -4 -2 0 2 4 6
AEC LAB MANUAL
Dept. of ECE Page 21
SERIES POSITIVE CLIPPERS
Assume
Vi = 10VP-P, R = 10K, Vref = 2V, VK = 0.6V Calculate VO.
Case 1: Case 1:
When Vi [VR - VK] D = ON When Vi [2V-0.6V] D = ON
VO = Vi + VK VO = - 4.3V
Case 2: Case 2:
When Vi > [VR - VK] D = OFF When Vi > [VR - VK] D = OFF VO = Vref VO = 2V
TRANSFER CHARACTERISTICS
-6.00
-5.00
-4.00
-3.00
-2.00
-1.00
0.00
1.00
2.00
3.00
4.00
5.00
6.00
0 90 180 270 360 450 540 630 720 810
Vi
VO
-5.00
-4.00
-3.00
-2.00
-1.00
0.00
1.00
2.00
3.00
-6.00 -4.00 -2.00 0.00 2.00 4.00 6.00
AEC LAB MANUAL
Dept. of ECE Page 22
SERIES NEGATIVE CLIPPER
Assume
Vi = 10VP-P, R = 10K, Vref = 2V, VK = 0.6V Calculate VO.
Case1:
When Vi -[ VR - VK] D = ON VO = Vi - VK
Case 2:
When Vi -[ VR - VK] D = ON VO = VR
TRANSFER CHARACTERISTICS
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
0 90 180 270 360 450 540 630 720 810
VI
VO
-3.00
-2.00
-1.00
0.00
1.00
2.00
3.00
4.00
5.00
6.00
-6.00 -4.00 -2.00 0.00 2.00 4.00 6.00
AEC LAB MANUAL
Dept. of ECE Page 23
PARALLEL CLIPPING (DOUBLE ENDED)
Assume
Vi = 10VP-P, R = 10K, Vref1 = 1.4V, Vref2 = 1.4V, VK = 0.6V Calculate VO.
Case1: Case 1:
When Vi [VRef1 + VK] When Vi [1.4V + 0.6V]
VO = [VRef1 + VK] VO = 2V
Case 2: Case 2:
When Vi [VRef2 + VK] When Vi [1.4V + 0.6V]
VO = - [VRef2 + VK] VO = - 2V
Case 3: Case 3:
When - [VRef2 + VK] Vi < [Vref1 + VK] When - [1.4V + 0.6V] Vi < [1.4V + 0.6V]
VO = Vi VO = Vi
TRANSFER CHARACTERISTICS
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
0 90 180 270 360 450 540 630 720 810
vi
vo
-3
-2
-1
0
1
2
3
-6 -4 -2 0 2 4 6
AEC LAB MANUAL
Dept. of ECE Page 24
SERIES CLIPPING (DOUBLE ENDED)
Assume
Vi = 10VP-P, R = 10K, Vref1 = 1.4V, Vref2 = 1.4V, VK = 0.6V Calculate VO.
Case 1: Case 1:
When Vi [VRef1 + VK] D = ON When Vi [2V + 0.6V] D = ON VO = Vi - VK - VR VO = 5V - 0.6V - 1.4V VO = 3V
Case 2: Case 2:
When Vi [VRef1 + VK] D = OFF When Vi [VRef1 + VK] D = OFF VO = Vi - VK - VR VO = -5V + 0.6V + 1.4V
VO = - 3V
TRANSFER CHARACTERISTICS
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
0 90 180 270 360 450 540 630 720 810
vi
vo
-4
-3
-2
-1
0
1
2
3
4
-6 -4 -2 0 2 4 6
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 25
RC COUPLED BJT AMPLIFIER
AIM:
Wiring of RC coupled single stage BJT amplifier and determination of the gain frequency
response, input and output impedance.
COMPONENTS REQUIRED:
Sl.No Components Range Quantity
1 Transistor SL-100 1
2 Resistors 22K,2.2K,4.7K,470Ω 1
3 Capacitors 0.47µF,47µF 0.47 µF =2
47 µF=1
4 Variable power supply (0-30)V 1
5 DSO - 1
6 Function Generaator - 1
7 Connecting wires - 1 set
THEORY:
A common emitter amplifier is defined as an electronic circuit with an ac input voltage applied
across the base and emitter pins of a bipolar junction transistor with the output voltage taken as
the voltage from the collector pin to ground. As the name suggests, the emitter is connected to a
reference ground. RC coupled amplifier is the one which amplifies the given small signal.
Basically it is the multi stage amplifier which usually has two or more stages.
In each stage, there will be there would be a CE amplifier present whose output is given as the
input to the next stage. The function of the input capacitor is to block the base from any DC shift
caused by the input signal. Allowing a DC shift to be felt at the base would continuously change
the Q point of the amplifier, resulting in erratic effects on the amplifier’s output voltage.
The input capacitor must allow all the ac signal components through. The function of the output
capacitor is to block the collector from DC shift that might be caused by the load. Failure to do
so would result in a Q-point shift. The bypass capacitor is used to short out the emitter resistor
during ac operation.
The two values of frequency for which the voltage gain of about 0.707 times the peak voltage
gain are called the low and high frequency roll-off. These correspond to the minimum and
maximum frequencies for the power carried by the signal is at most a factor of two smaller than
the maximum. Hence, the difference between the two frequencies is called the half power
bandwidth.
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 26
CIRCUIT DIAGRAM:
Amplifier Design:
Select transistor SL-100 having the following specifications IE = IC = 2mA, β = 100, VCE = 5V
Selection of RE
VCC = 10V; VE = ; VE =
= 1V
VE = IERE; RE = ; RE =
= 0.5K; Select RE = 470Ω;
Selection of RC:
VCE = ; VCE = = 5V
VCE = ICRC + VCE + VE
RC =
RC = 2KΩ; Select RC = 2.2K Ω;
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 27
Selection of R1 and R2:
VB = VBE + VE; VB = 1.7V;
VB =
1.7V =
10R2 = 1.7R1 + 1.7 R2; R1 = 4.8R2;
Choose R2 = 4.7KΩ; R1 = 4.8 4.7K;
R1 = 22.56KΩ
Choose R1 = 22KΩ
Selection of bypass capacitor CE:
Let XCE = ; At f = 100Hz, =
CE = 59 F; Choose CE = 47 F
Selection of Coupling Capacitors:
Select CC1 = CC2 = 0.47 F
Procedure:
1. Connections are made as shown in the circuit diagram.
2. The input voltage Vin is adjusted to a convenient value (10mV to 50mV) within the
distortion less limit and value must be kept constant throughout the experiment.
3. Frequency of the input signal is varied from 100Hz to 2MHz in steps and at each step,
corresponding output VO is noted down.
4. All readings are tabulated and graph of voltage gain in dB Vs frequency is drawn on a
Semi-log sheet.
5. 3dB bandwidth is determined from the frequency response curve.
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 28
TABULAR COLUMN:
Frequency in Hz VO in Volts Gain in dB= 20log10(VO/Vin)
100Hz
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
2MHz
Input Impedance
Procedure:
1. A DRB is connected in series with the input as shown in the figure.
2. In the mid frequency region (with constant gain) with zero resistance (all the knobs of the
DRB in zero position) the output is measured.
3. Now the DRB resistance is increased till the output voltage falls to half of the initial
value.
4. The corresponding DRB value gives the input impedance of the circuit.
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 29
Output impedance
Procedure:
1. A DRB is connected in series with the input as shown in the figure.
2. In the mid frequency region (with constant gain) with maximum resistance (all the knobs
of the DRB in maximum position) the output is measured.
3. Now the DRB resistance is decreased till the output voltage falls to half of the initial
value.
4. The corresponding DRB value gives the output impedance of the circuit
RESULT:
Gain AV
Bandwidth
Input impedance Zi
Output impedance ZO
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 30
HARTLEY OSCILLATOR
AIM: Testing for the performance of BJT Hartley oscillator for fo =100KHz.
COMPONENTS REQUIRED:
Sl.No Components Range Quantity
1 Transistor SL-100 1
2 Resistors 22K,2.2K,4.7K,1K,470Ω, 1K POT 1
3 Capacitors 0.47µF,47µF 0.47 µF =2
47 µF=1
4 Variable power supply (0-30)V 1
5 DSO - 1
6 Function Generaator - 1
7 Connecting wires - 1 set
8 Decade Inductance box - 1
9 Decade Capacitane box - 1
THEORY:
When the collector supply voltage Vcc is switched on, collector current starts rising and charges
the capacitor C. When this capacitor is fully charged, it discharges through coils L1 and L2,
setting up damped harmonic oscillations in the tank circuit. The oscillatory current in the tank
circuit produces an a.c. voltage across L1 which is applied to the base emitter junction of the
transistor and appears in the amplified form in the collector circuit.
Feedback of energy from output (collector emitter circuit) to input (base-emitter circuit is)
accomplished through auto transformer action. The output of the amplifier is applied across the
inductor L1, and the voltage across L2 forms the feedback voltage. The coil L1, is inductively
coupled to coil L2, and the combination acts as an auto-transformer.
This energy supplied to the tank circuit overcomes the losses occurring in it. Consequently the
oscillations are sustained in the circuit. The energy supplied to the tank circuit is in phase with
the generated oscillations. The phase difference between the voltages across L1 and that across
L2 is always 180° because the centre of the two is grounded. A further phase of 180° is
introduced between the input and output voltages by the transistor itself. Thus the total phase
shift becomes 360O
(or zero), thereby making the feedback positive or regenerative which is
essential for oscillations.
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 31
CIRCUIT DIAGRAM:
Amplifier design:
VCE = 5V , IC = 2mA, VCC = 2VCE = 10V
VRE = ×VCC =
×10 = 1V
RE = =
= 500Ω. Choose 470 Ω.
RC = = 2K. Choose 2.2KΩ.
Assume hfe = 50
IB = = 0.04mA = 40µA
VR2 = VBE – VBE = 1V + 0.6V = 1.6V & VR1 = VCC - VR2 = 10 – 1.6V = 8.4V
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 32
R2 = =
= =
= 4.7KΩ.
R1 =
= =
= = 22KΩ.
Design of Tank Circuit:
Let fo = 100KHz
Choose L1 = 200 µH, L2 = 600 µH
Choose fo = √
Calculate C = ?
C = 330 µF
PROCEDURE:
1. Connections are made as shown in the circuit diagram.
2. Measure the DC conditions.
3. Vary the 1K potentiometer so as to get an undistorted sine wave at the output.
4. Note down the amplitude and frequency of the output wave and frequency haas to match
with the theoritical frequency.
RESULT:
Frequency = Hz.
Amplitude = V.
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 33
COLPITTS OSCILLATOR
AIM: Testing for the performance of BJT Colpitts oscillator for fo =100KHz.
COMPONENTS REQUIRED:
Sl.No Components Range Quantity
1 Transistor SL-100 1
2 Resistors 22K,2.2K,47K,1K, 470Ω,1K, POT 1
3 Capacitors 0.47µF,47µF 0.47 µF =2
47 µF=1
4 Variable power supply (0-30)V 1
5 DSO - 1
6 Function Generaator - 1
7 Connecting wires - 1 set
8 Decade Inductance box - 1
9 Decade Capacitance box - 1
THEORY:
The Colpitt’s oscillator is designed for generation of high frequency sinusoidal oscillations (radio
frequencies ranging from 10 KHz to 100MHz). They are widely used in commercial signal
generators up to 100MHz. Colpitt's oscillator is same as Hartley oscillator except for one
difference. Instead of using a tapped inductance, Colpitt's oscillator uses a tapped capacitance.
When the collector supply voltage Vcc is switched on, collector current starts rising and charges
the capacitors C1 and C2. When these capacitors are fully charged, they discharge through coil L
setting up damped harmonic oscillations in the tank circuit. The oscillatory current in the tank
circuit produces an a.c. voltage across C1, C2. The oscillation across C2 is applied to base-
emitter junction of the transistor and appears in the amplified form in the collector circuit and
overcomes the losses occurring in the tank circuit.
The feedback voltage (across the capacitor C2) is 180° out of phase with the output voltage
(across the capacitor C1), as the centre of the two capacitors is grounded. A phase shift of 180° is
produced by the feedback network and a further phase shift of 180° between the output and input
voltage is produced by the CE transistor. Hence, the total phase shift is 360° or 0°, which is
essential for sustained oscillations, as per, the Barkhausen criterion.
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 34
CIRCUIT DIAGRAM:
AMPLIFIER DESIGN:
VCE = 5V , IC = 2mA, VCC = 2VCE = 10V
VRE = ×VCC =
×10 = 1V
RE = =
= 500Ω. Choose 470 Ω.
RC = = 2K. Choose 2.2KΩ.
Assume hfe = 50
IB = = 0.04mA = 40µA
VR2 = VBE – VBE = 1V + 0.6V = 1.6V & VR1 = VCC - VR2 = 10 – 1.6V = 8.4V
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 35
R2 = =
= =
= 4.7KΩ.
R1 =
= =
= = 22KΩ.
DESIGN OF TANK CIRCUIT:
Let fo = 100KHz
Choose C1 = C2 = 1000pF
fo = √
Calculate L = ?
L= 5mH
PROCEDURE:
1. Connections are made as shown in the circuit diagram.
2. Measure the DC conditions.
3. Vary the 1K potentiometer so as to get an undistorted sine wave at the output.
4. Note down the amplitude and frequency of the output wave and frequency haas to match
with the theoritical frequency.
RESULT:
Frequency = Hz.
Amplitude = V.
AEC LAB MANUAL
Depat. Of ECE, KSSEM Page 36
BJT-CRYSTAL OSCILLATOR
AIM: Testing for the performance of the BJT- crystal oscillator for fo > 500KHz.
COMPONENTS REQUIRED:
Sl.No Components Range Quantity
1 Transistor SL-100 1
2 Crystal 2MHz 1
3 Resistors 22K, 2.7K, 47K, 470Ω, 1K POT 1
4 Capacitors 0.47µF, 47 µF 0.47 µF =2
47 µF=1
5 Variable power supply (0-30)V 1
6 Function Generator - 1
7 DSO - 1
8 Connecting wires - 1set
THEORY:
A crystal oscillator is basically a tuned oscillator using a pizeoelectric crystal asa resonant
circuit. The crystal has a greatest stability in holding consant charge at whatever frequency the
crystal is originally cut to operate. Crystal oscillators are used whenever great stability is
required, such as communication, transmitters and recievers.
Characteristics of a Quartz crystal
A quartz crystal exihibits the property that whenever mechanical stress is applied across one set
of its faces, a difference os potential develops acoss the opposite faces. This property of a crystal
is called pizeoelectric effect. Similarly, a voltage applied across one set of faces of the crystal
causes mechanical distortion in the cryatal shape. When alternating voltage is applied to a
crystal, mechanical vibrations are set up- these vibrations having a natural resonating frequency
dependent on the crystal.
The inductor L and the cappacitor C represents electrical equivalents of crystal mass and
compliance respectively, whereas resistance R is an electrical equivalent of the crystal structures
internal friction. The shunt capacitance CM represents the capacitance due to mechanical
mounting of the crystal. Because the crystal loses, represented by R, are small, the equivalent
cryatal Q factor is high typically 20,000. Values of Q up to almost 106 can be achieved by using
crystals. The crystal has two resonant frequencies. One resonant condition occurs when the
reactances of the series RLC leg are equal.
AEC LAB MANUAL
Depat. Of ECE, KSSEM Page 37
CIRCUIT DIAGRAM:
Amplifier design:
VCE = 5V , IC = 2mA, VCC = 2VCE = 10V
VRE = ×VCC =
×10 = 1V
RE = =
= 500Ω. Choose 470 Ω.
RC = = 2K. Choose 2.2KΩ.
Assume hfe = 50
IB = = 0.04mA = 40µA
VR2 = VBE – VBE = 1V + 0.6V = 1.6V & VR1 = VCC - VR2 = 10 – 1.6V = 8.4V
AEC LAB MANUAL
Depat. Of ECE, KSSEM Page 38
R2 = =
= =
= 4.7KΩ.
R1 =
= =
= = 22KΩ.
PROCEDURE:
1. Connections are made as shown in the circuit diagram.
2. Measure the DC conditions.
3. Vary the 1K potentiometer so as to get an undistorted sine wave at the output.
4. Note down the amplitude and frequency of the output wave and frequency haas to match
with the theoritical frequency.
RESULT:
Frequency = Hz.
Amplitude = V.
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 39
RC PHASE SHIFT OSCILLATOR
AIM: To generate the sinusoidal waveform of RF range using RC phase shift oscillator.
COMPONENTS REQUIRED:
Sl.No Components Range Quantity
1 Transistor SL-100 1
2 Resistors 22K,2.2K,47K,1K,1K and 10K POT 2.2K=4,
Others=1
3 Capacitors 0.47µF, 0.02µF 0.47 µF =2
47 µF=1
4 Variable power supply (0-30)V 1
5 DSO - 1
6 Function Generator - 1
7 Connecting wires - 1 set
.
THEORY:
The RC Oscillator which is also called a Phase Shift Oscillator produces a sine wave output
signal using regenerative feedback from the resistor-capacitor combination. This regenerative
feedback from the RC network is due to the ability of the capacitor to store an electric charge,
(similar to the LC tank circuit). This resistor-capacitor feedback network can be connected as
shown in the figure to produce a leading phase shift (phase advance network) or interchanged to
produce a lagging phase shift (phase retard network) the outcome is still the same as the sine
wave oscillations only occur at the frequency at which the overall phase-shift is 360o. By varying
one or more of the resistors or capacitors in the phase-shift network, the frequency can be varied
and generally this is done using a 3-ganged variable capacitor.
Since the resistor-capacitor combination in the RC Oscillator circuit also acts as an attenuator
producing an attenuation of -1/29th (Vo/Vi = β) per stage, the gain of the amplifier must be
sufficient to overcome the losses and in our three mesh network above the amplifier gain must be
greater than 29. The loading effect of the amplifier on the feedback network has an effect on the
frequency of oscillations and can cause the oscillator frequency to be up to 25% higher than
calculated. Then the feedback network should be driven from a high impedance output source
and fed into a low impedance load such as a common emitter transistor amplifier but better still
is to use an operational amplifier as it satisfies these conditions perfectly.
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 40
CIRCUIT DIAGRAM
AMPLIFIER DESIGN:
VCE = 5V , IC = 2mA, VCC = 2VCE = 10V
VRE = ×VCC =
×10 = 1V
RE = =
= 500Ω. Choose 470 Ω.
RC = = 2K. Choose 2.2KΩ.
Assume hfe = 50
IB = = 0.04mA = 40µA
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 41
VR2 = VBE – VBE = 1V + 0.6V = 1.6V & VR1 = VCC - VR2 = 10 – 1.6V = 8.4V
R2 = =
= =
= 4.7KΩ.
R1 =
= =
= = 22KΩ.
FEEDBACK CIRCUIT DESIGN:
If the frequency for the RC phase shift oscillator is say, 1 KHz, Then,
fo = √ = 1KHz
Where k , Choose k=1, so RC = R = 2.2KΩ. Substituting these values in the frequency
equation, we get C = 0.022µF.
The current gain of the transistor, β 4K + 23 +
PROCEDURE:
1. Connections are made as shown in the circuit diagram.
2. Measure the DC conditions.
3. Observe the sinusoidal waveform output and calculate the frequency using CRO/DSO.
4. Measure the phase difference between the output and at points A,B,C.
5. To observe the phase difference between the signals connect the output of the amplifier to
channel1 of the CRO/DSO and connect A or B or C to channel2 of the CRO/DSO.
6. Go to X-Y mode to observe the Lissajous figure, and also to measure the phase difference
between the output and A or B or C.
RESULT:
AEC LAB MANUAL
Dept. of ECE Page 42
VOLTAGE SERIES FEEDBACK AMPLIFIER
AIM:
To conduct an experiment on two-stage BJT small signal amplifier (with and without feedback).
COMPONENTS AND EQUIPMENTS REQUIRED:
Sl.No Components Range Quantity
1 Transistor SL-100 1
2 Resistors 22K,10K,2.2K,4.7K,470Ω,390 Ω,100 Ω 2
3 Capacitors 0.47µF,47µF 0.47 µF =3
47 µF=2
4 Variable power supply (0-30)V 1
5 DSO - 1
6 Function Generaator - 1
7 Connecting wires - 1 set
THEORY:
Feedback plays an important role in electronic circuits and the basic parameters such as input
impedance, output impedance, voltage or current gain and band width, may be altered
considerably in a desired direction by the use of feedback for a given amplifier. In any of the
feedback amplifiers, a part of the output signal is taken from the output of the amplifier and is
combined with the normal input signal and thereby the feedback is achieved. If the signal
feedback is aid the input signal, then it is said to positive feedback and if it is opposing, it is said
to be the negative feedback. Positive feedback is used in oscillators and negative feedback is
used wherever the gain has to be stabilized, bandwidth is to be increased and distortion has to be
reduced. There are four types of negative feedback amplifiers depending the input signal and
output signal that is feedback.
1. Voltage- series feedback
2. Voltage-shunt feedback
3. Current-series feedback
4. Current-shunt feedback
Voltage-Series Feedback Amplifier: In
this case, the part of the output voltage for the amplifier is feedback, which is in series opposition
with input. This reduces the gain, but stabilizes it. Also the input impedance and bandwidth
increases and output impedance decreases.
AEC LAB MANUAL
Dept. of ECE Page 43
CIRCUIT DIAGRAM
Fig: Voltage Series amplifier without feedback
Fig: Voltage Series amplifier with feedback
AEC LAB MANUAL
Dept. of ECE Page 44
Amplifier design:
It remains same as given for RC-coupled amplifier.
Here β = =
= , called as feedback factor.
Select RE = 390Ω; RE11 = 100Ω; RF = 10KΩ
PROCUDURE:
1. Connect the circuit as shown in the figure. Set the signal generator amplitude to 10mV
peak to peak sine waveform and observe the input and output signals of the circuit
simultaneously on the CRO/DSO.
2. By varying the frequency of the input from 100Hz to 2MHz range correspondingly note
down the output voltage.
3. Plot the gain in dB against frequency in a semi log graph sheet.
4. From the graph determine the bandwidth.
5. Repeat the same procedure for with feedback case also.
6. Calculate the input and output impedance in both the cases.
TABULAR COLUMN
F in Hz VO(P-P) in V AV = Voltage gain in
dB = 10log10AV
AEC LAB MANUAL
Dept. of ECE Page 45
RESULT:
Gain AV without Feedback
Gain AV with Feedback
Bandwidth without Feedback
Bandwidth with Feedback
Input impedance Zi without feedback
Input impedance Zi with feedback
Output impedance ZO without feedback
Output impedance ZO with feedback
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 46
THEVENIN’S AND MAXIMUM POWER TRANSFER THEOREM
AIM:
To verify Theveinin’s theorem.
COMPONENTS REQUIRED:
Sl. No Components Range Quantity
1 Resistors 1K 4
2 DC variable Power supply (0-30) V 1
3 Multimeter - 1
4 Connecting Wires - 1 Set
5 DRB - 1
THEVENIN’S THEOREM:
Statement: “Any linear, bilateral network containing energy sources and impedances can be
replaced with equivalent circuit consisting of a Voltage Source in series with Impedance”.
THEORY:
M Leon Thevenin a French engineer in 1863 developed the most important theorem of all
network theorems. Using Thevenin’s theorem any complex network can be replaced by a simple equivalent circuit. The new simple single loop equivalent circuit enables us to make rapid
calculations of the current, voltage and power delivered to the load by the original network. It
also helps us to find the best value of load resistance needed for a particular application.
CIRCUIT DIAGRAM:
Given complex circuit
Fig. (1)
Measure the voltage across Load Resistance RL, i.e. across A and B and call that voltage as V1.
V1 =V.
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 47
Step 1: Equivalent Circuit to find VTH by opening Load Resistance RL across A and B
Fig. (2)
Measure the voltage across A and B and call that voltage as VTH.
VTH =______V.
Step 2: Equivalent Circuit to find RTH by removing RL across A and B and shorting the
supply voltage.
Fig. (3)
Measure the Resistance across A and B and call that Resistance as RTH.
RTH =_____Ω.
Step3: Thevenin’s Equivalent circuit
Fig. (4)
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 48
Measure the voltage across A and B and call that voltage as V2.
V2 =_____V.
If the voltage,V1 = V2, then Thevinin’s theorem is verified.
THEORETICAL CALCULATION:
VTH=
RTH = +R2
PROCEDURE:
1. Connections are made as shown in fig. (1).
2. Keep the voltage knobs at minimum position and Current knobs at Maximum position
and then switch on the power supply and adjust the voltage to say 5 Volts.
3. Measure the voltage across RL and note down as V1 from fig. (1).
4. To measure VTH, Open circuits the load resistor RL as shown in fig. (2), measure the
voltage across terminal A and B, call that voltage as VTH.
5. To find the Thevinin’s impedance (RTH) measure the resistance between the terminals A
and B after shorting the supply voltage as shown in fig. (3).
6. Thevinin’s equivalent circuit connections are made by setting supply voltage to VTH and
decade resistance box to RTH and connect back the load resistor RL across A and B as
shown in Fig. (4).
7. Now measure the Voltage across load resistor RL with respect to Thevinin’s equivalent
circuit. i.e. V2
8. Verify the voltages V1 and V2.
RESULT:
Voltage across the load resistor RL with respect to complex circuit = V.
Voltage across the load resistor RL with respect to Thevinin’s equivalent circuit = V.
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 49
MAXIMUM POWER TRANSFER THEOREM
AIM: To verify maximum power transfer theorem.
COMPONENTS REQUIRED:
Sl No Components Range Quantity
1 Resistors 1.5 K 1
2 DC variable Power
supply
(0-30) V 1
3 Multimeter - 1
4 Connecting Wires - 1 Set
5 DRB - 1
MAXIMUM POWER TRANSFER THEOREM:
Statement: Maximum power is delivered from a network to a load when the load resistance is
equal to the Thevenin’s resistance of the network.
THEORY:
In many practical applications a circuit is designed to supply power to the load. For example in
communication systems, antennas supply power to receivers, audio amplifiers supply power to
load speakers, transmitters supply power to loads. Maximum power transfer theorem plays an
important role in matching circuit’s loads.
CIRCUIT DIAGRAM:
Given complex circuit
Fig. (1): Complex Network
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 50
Thevinin’s Equivalent circuit
Fig. (2): Thevinin’s Network
THEORITICAL CALCULATION:
VTH = = 5V
RTH = = 500Ω
PROCEDURE:
1. The resistance value in DRB is varied and the Voltage is noted down.
2. Connections are made as shown in the figure.
3. The power P is calculated using P= V2/RL.
4. A graph of load resistance Vs Power is plotted.
5. The maximum power occurs when RL = RS.
POWER Vs LOAD RESISTANCE CURVE:
P
Fig (3): Graph of Power v/s RL
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 51
TABULAR COLUMN
RL in Ω VO in Volts P = V2/RL (mW)
100 Ω
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
1K Ω
RESULT:
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 52
CHARACTERISTICS OF RESONANT CIRCUITS
AIM: To obtain the frequency response of RLC series and parallel resonant circuits and hence to
determine bandwidth and Q-factor.
COMPONENTS REQUIRED:
Sl.No Components Range Quantity
1 Resistors 1KΩ 1
2 DSO - 1
3 Decade Capacitance Box - 1
4 Decade Inductance Box - 1
5 Function Generator - 1
6 Connecting wires - 1 set
.
THEORY:
In a circuit containing capacitive and inductive components, the impedance of the circuit varies
as the applied voltage’s frequency is varied. At one point of frequency, the impedance offered by the circuit will be purely resistive and so the current in the circuit and applied voltage will be in
phase. This phenomenon is called resonance and the frequency which causes resonance is called
resonant frequency.
SERIES RESONANCE CIRCUIT:
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 53
DESIGN:
fo = √
Let fo = 800Hz
Assume R = 1KΩ
C = 0.1µF
Calculate L value
L = 395.7mH
PROCEDURE:
1. Connections are made as shown in the circuit diagram.
2. AC supply is switched on. Input voltage is adjusted to 10VP-P.
3. The frequency is gradually varied from 100Hz to 2KHz. Different values of ‘f’ using
DSO and voltage is noted down. The results are tabulated in the tabular column.
4. Frequency response i.e a graph of frequency Vs current is drawn.
5. From the graph, resonant frequency fO is noted down at which current is maximum.
6. Lower half frequency and upper half frequency are noted down corresponding to a
current of IO/√ . Bandwidth = f2 – f1 = Hz.
7. Q-factor = f2/(f2-f1).
TABULAR COLUMN
Frequency in
Hz
Output Voltage VO
(V)
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 54
FREQUENCY RESPONSE CURVE
VO (V)
F (Hz)
Fig: Graph of Voltage Vs Frequency
RESULT:
Resonant Frequency =
Bandwidth =
Upper and lower half frequencies =
Q-factor =
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 55
PARALLEL RESONANCE CIRCUIT:
:
DESIGN:
fo = √
Let fo = 800Hz
Assume R = 1KΩ
C = 0.1µF
Calculate L value
L = 395.7mH
PROCEDURE:
1. Connections are made as shown in the circuit diagram.
2. AC supply is switched on. Input voltage is adjusted to 10VP-P.
3. The frequency is gradually varied from 100Hz to 2KHz. Different values of ‘f’ using DSO and voltage is noted down. The results are tabulated in the tabular column.
4. Frequency response i.e a graph of frequency Vs current is drawn.
5. From the graph, resonant frequency fO is noted down at which current is maximum.
6. Lower half frequency and upper half frequency are noted down corresponding to a
current of IO/√ . Bandwidth = f2 – f1 = Hz.
7. Q-factor = f2/(f2-f1).
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 56
TABULAR COLUMN
Frequency in
Hz
Output Voltage VO
(V)
FREQUENCY RESPONSE CURVE:
VO(V)
F(Hz)
Fig: Graph of Voltage Vs Frequency
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 57
RESULT:
Resonant Frequency =
Bandwidth =
Upper and lower half frequencies =
Q-factor =
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 58
BJT DARLINGTON EMITTER FOLLOWER
AIM:
Wiring of BJT Darlington emitter follower with and without Bootstrapping and determination of
the gain, input impedance and output impedance.
COMPONENTS REQUIRED:
Sl.No Components Range Quantity
1 Resistors 1K, 220K, 330K, 4.7K 1
2 Capacitors 0.47µF 2
3 Transistor SL-100 2
4 D.C Variable Power supply (0-30)V 1
5 Multimeter - 1
6 Connecting Wires - 1set
7 Decade Resistance box - 1
THEORY:
In emitter follower, an input signal is applied to the base and the output is taken across the
emitter. The emitter follower has reasonably high input impedance and may be used whenever
impedance up to about 500K is needed. For higher input impedance, we may use two transistors
to form Darlington pair. The output voltage is always less than the input voltage due to drop
between the base and emitter. However, the voltage gain is approximately unity. In addition the
output voltage is in phase with the input voltage. Hence it is said to follow the input voltage with
an in phase relationship. This accounts for the terminology ’Emitter Follower’. The collector is at ac ground; therefore the circuit is actually common collector amplifier. This circuit presents high
input impedance at the input and low output impedance at the output. It is therefore frequently
used for impedance matching purposes, where load impedance is matched to source impedance
for maximum signal transfer.
The Darlington connection shown is a connection of two transistors which results in a current
gain that is the product of the current gains of the individual transistors. Hence the Darlington
pair operates as one ‘Super Beta Transistor’ offering a very high current gain. The Darlington
Emitter follower is a CC configuration but has the following characteristics.
Voltage Gain = Almost Unity
Current Gain = Very High, a few thousands
Input Impedance = High, hundreds of KΩ
Output Impedance = Low, tens of Ohms
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 59
Bootstrapped Emitter Follower: To overcome the decrease in the input impedance due to the
biasing resistors, the input circuit of fig.1 is modified by the addition of the resistor R3 and
capacitor in between R1 and R2 as shown in fig.2. The capacitance is chosen large enough to act
as a short circuit at the lowest frequency of operation. Hence the bottom of R3 is effectively
connected to output and the top of R3 is at the input. Using the concept of Miller’s theorem, the biasing arrangement R1, R2, R3 represents the input impedance of R3/(1-AV), which is very very
high as AV is almost equal to 1. The term bootstrapping arises from the fact that, if one end of the
resistor of R3 changes in voltage, the other end of R3 moves through the same potential
difference, it is as if R3 is pulling itself by its bootstraps. The output impedance in this case will
be almost equal to that of Darlington circuit
DESIGN:
Let Q-point = (VCE2, IC2) = (5V, 5mA)
Let VCC = 2 VCE2 = 10V
RE = =
= =
RE = 1KΩ.
Consider β1 = β2 = β = 50.
IB2 = IE1 = = 0.1mA
Therefore, IB1 = =
= = 0.002mA.
Applying KVL to B-E loop
V2 = 0.6V + 0.6V + 5V = 6.2V
R2 = =
= 344KΩ. Select 330KΩ
R1 = =
= 190KΩ. Select 220KΩ
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 60
CIRCUIT DIAGRAM:
Fig: Darlington Emitter follower without bootstrap
Fig: Darlington Emitter follower with bootstrap
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 61
PROCEDURE:
1. Place the components on the bread/spring board as shown in the figure.
2. Connect the signal generator and apply a sine wave of peak-to-peak amplitude 1V, 1KHz.
Connect the input and output of the circuit to the two channels of the CRO and observe
the waveforms.
3. Gradually increase the input signal until the signal gets distorted. When this happens
slightly reduce the input signal amplitude such that output is maximum undistorted
signal. Then measure the amplitude of the input and output waveform. Calculate the
voltage gain.
4. Connect input and output of the circuit to the two channels of the CRO/DSO and observe
the waveforms. Note down the corresponding waveform on the graph.
5. Find the input and output impedance per given procedure.
6. Connect the bootstrap circuit and make the necessary changes as per figure.
7. Find the input and output impedance with this circuit.
Input Impedance Zi
1. Adjust the input signal peak-peak in such that the output sine wave is not clipped.
2. Note down this value of the input Vin.(Let the frequency of the input signal be around
2KHz)
3. Note down the peak-peak amplitude of the corresponding output VO.
4. Connect a DRB (with zero resistance) in series with the function generator.
5. Increase the resistance in DRB and observe the magnitude of the output VO
simultaneously on the CRO/DSO.
6. When the magnitude of the output VO is reduced to half of its original value, stop varying
the potentiometer further and remove the DRB from the circuit.
7. Measure the value of resistance in DRB and this is measured value will be the input
impedance of the circuit.
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 62
Output Impedance ZO
1. Adjust the input signal peak-peak in such that the output sine wave is not clipped.
2. Note down this value of the input Vin.
3. Note down the peak-peak amplitude of the corresponding output VO.
4. Connect a DRB (with maximum resistance) in parallel with the load.
5. When the magnitude of the output VO is reduced to half of its original value, stop varying
the potentiometer further and remove the DRB from the circuit.
6. Measure the value of resistance in DRB and this is measured value will be the output
impedance of the circuit.
RESULT:
Parameters AV = (VO/Vi) Zi ZO
Without Bootstrap
With Bootstrap
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 63
TRANSFORMER-LESS CLASS B PUSH-PULL POWER AMPLIFIER
AIM:
Testing of a transformer less class-B push pull power amplifier and determination of its
conversion efficiency.
COMPONENTS REQUIRED:
Sl.No Components Range Quantity
1 Transistors SL-100, SK-100 1
2 Resistors 270Ω 2
3 Variable power supply (0-30)V 1
4 Function Generator - 1
5 DSO - 1
6 Decade Resistance box - 1
7 Connecting Wires - 1set
THEORY:
Push-pull amplifier is basically a class B amplifier, in which a transistor conducts for a half
cycle. For complete conduction, such an amplifier uses two transistors. The arrangement of
transistors is called complementary circuit. During the positive half of the input signal, the NPN
transistor conducts and during negative half of the input signal PNP transistor conducts. The
transistor conducts only if the input voltage across the threshold voltage of 0.7V. This is because
input itself biases the transistors. During this interval, no transistors conducts or output is zero.
This causes a distortion called crossover distortion. If the peak load-voltage equals the supply
voltage, maximum efficiency occurs and the value is 78.5%. The main disadvantage is it uses
two power supply and distortion itself.
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 64
CIRCUIT DIAGRAM:
Fig. (1)
PROCEDURE:
1. Place the components on the spring board and connect them as shown in the fig.(1).
2. Connect one channel of the CRO to input signal and connect second channel to the
output.
3. Keep frequency of the function generator around 1KHz and increase the amplitude
around 10V and observe the input and output waveforms. Observe the crossover
distortion.
4. Gradually increase the input signal until the output signal gets distorted. When this
happens slightly reduce the input signal amplitude such that output is maximum
undistorted signal. Note down the Peak value of the output waveform and VCC.
5. Calculate the efficiency using the equation % efficiency = .
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 65
TABULAR COLUMN:
RL in KΩ %Efficiency
1KΩ
.
.
.
.
.
.
.
.
.
.
10KΩ
RESULT:
The efficiency of the class B power amplifier for different load resistance is verified.
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 66
BIBLIOGRAPHY
1. “Electronic devices and circuit theory”, Robert L.Boylestad and
Louis Nashelsky.
2. “Integrated electronics”, Jacob Millman and Christos C Halkias.
3. “Electronic devices and circuits”, David A. Bell.
4. “Electronic devices and circuits”, G.K.Mittal.
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 67
VIVA-VOCE QUESTIONS
1. What are conductors, insulators, and semi-conductors? Give egs.
2. Name different types of semiconductors.
3. What are intrinsic semiconductors and extrinsic semiconductors?
4. How do you get P-wpe and N-type semiconductors?
5. What is doping? Name different levels of doping.
6. Name different types of Dopants. .
7. What do you understand by Donor and acceptor atoms?
8. What is the other name for p-type and N-type semiconductors?
9. What are majority carriers and minority carriers?
10. What is the effect of temperature on semiconductors?
11. What is drift current? .
12. What is depletion region or space charge region?
13. What is junction potential or potential barrier in PN junctioI).?
14. What is a diode? Name different types of diodes and name its applications
15. What is biasing? Name different types w.r.t. Diode biasing
16. How does a diode behave in its forward and reverse biased conditions?
17. What is static and dyriantic resistance of diode?
18. Why the current in the fo~ard biased diode takes exponential path?
19. What do you understand 1?y AvaJanche breakdown and zener breakdown?
20. Why diode is called unidirectional device.
21. What is PIV of a diode
22. What is knee voltage or cut-in voltage?
23. What do you mean by transition capacitance or space charge capacitor?
24. What do you mean by diffusion capacitance or storage capacitance?
25. What is a transistor? Why is it called so? .
26. Name different types, of transistors?
27. Name different configurations in which the transistor is operated
28. Mention the applications of transistor. Explain how transistor is used as switch
29. What is transistor biasing? Why is it necessary?
30. What are the three different regions in which the transistor works?
31. Why trmisistor is called current controlled device?
32. What is FET? Why it is called so?
33. What are the parameters ofFET?
34. What are the characteristics of FET?
35. Why FET is known as voltage controlled device?
36. What are the differences between BJT and FET?
37. Mention applications ofFET. What is pinch offvQltage, VGS(ofJ) and lDss
38. What is an amplifier? What is the need for an amplifier circuit?
39. How do you classify amplifiers? ,
40. What is faithful amplification? How do you achieve this?
41. What is coupling? Name different type.s of coupling
42. What is operating point or quiescent point?
43. What do you mean by frequency response of an amplifier?
44. What are gain, Bandwidth, lower cutoff frequency and upper cutoff frequency?
45. What is the figure of merit of an amplifier circuit?
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 68
46. What are the advantages of RC coupled amplifier?
47. Why a 3db point is taken to calculate Bandwidth?
48. What is semi-log graph sheet? Why it is used to plot frequency response?
49. How do you test a diode, transistor, FET?
50. How do you identify the tenninals of Diode, Transistor& FET? Mention the type
number of the devices used in your lab.
51. Describe the operation ofNPN transistor. Define reverse saturation current.
52. Explain Doping w.r.t. Three regions of transistor
53. Explain the terms hie/hib, hoelhob, hre/hrb, hre/hfb.
54. Explain thermal run-.taway. How it can'be prevented.
55. Define FET parameters and write the relation between them.
56. What are Drain Characteristics and transfer characteristics?
57. Explain the construction and working of FET
58. What is feedback? Name different types.
59. What is the effect of negative feedback on the characteristics of an amplifier?
60. Why common collector amplifier is known as emitter follower circuit?
61. What is the application of emitter follower ckt?
62. What is cascading and cascoding? Why do you cascade the amplifier ckts.?
63. How do you determine the value of capacitor?
64. Write down the diode current equation.
65. Write symbols of various passive and active components
66. How do you determine th~value of resistor by colour code method?
67. What is tolerance and power rating of resistor?
68. Name different types of resistors.
69. How do you c1assify resistors?
70. Name different types of capacitors..
71. What are clipping circuits? Classify them.
72. Mention the application of clipping circuits.
73. What are clamping circuits? Classify them
74. What is the other name of clamping circuits?
75. Mention the applications of clamping circuits.
76. 'What is Darlington emitter follower circuit?
77. Can we increase the number of transistors in Darlington emitter follower circuit?
Justify your answer.
78. What is the different between Darlington emitter follower circuit & Voltage follower
circuit using Op-Amp. Which is better.
79. Name different types of Emitter follower circuits.
80. What is an Oscillator? Classify them.
81. What ar~ The Blocks, which fonns an Oscillator circuits?
82. What are damped & Un-damped Oscillations?
83. What are Barkhausen's criteria?
84. What type of oscillator has got frequency stability?
85. What is the disadvantage of Hartley & Colpiit's Oscillator?
86. Why RC tank Circuit Oscillator is used for AF range?
87. Why LC tank Circuit Oscillator is used for RF range?
88. What type of feedback is used in Oscillator circuit?
89. In a Transistor type No. SL 100 and in Diode BY 127, what does SL and BY stands
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 69
for
90. Classify Amplifiers based on: operating point selection.
91. What is the efficiency of Class B push pull amplifier?
92. What is the drawback of Class B Push pull Amplifier? How it is eliminated.
93. What is the advantage of having complimentary symmetry push pull amplifier?
94. What is Bootstrapping? What is the advantage of bootstrapping?
95. State Thevenin's Theorem and Max.power transfer theorem.
96. What is the figure of merit of resonance circuit?
97. What is the application of resonant circuit?
98. What is a rectifier? Classify.
99. What is the efficiency of half wave and full wave rectifier?
100. What is the advantage of Bridge rectifier of Centre tapped type FWR
101. What is the disadvantage of Bridge rectifier?
102. What is a filter?
103. Name different types of filter ckts.
104. Which type of filter is used in day to day application and why?
105. What is ripple and ripple factor? .
106. What is the theoretical value of ripple for Half Wave and .Full wave rectifier?
107. What is need for rectifier ckts.
108. Why a step down transformer is used at the input of Rectifier ckt.
109. What is TUF? .
110. What is regulation w.r.t rectifier? And how it is calculated?
111. What is figure of merit of Rectifier ckt.
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 70
QUESTION BANK
ANALOG ELECTRONIC CIRCUITS LAB (10ESL37)
1. A) Design a positive clamping circuit for a given reference voltage of Vref=+2v. B) Design a negative clamping circuit for a given reference voltage ofVref= -2v.
2. Conduct a suitable experiment to shift the given reference voltage waveform by 4v a) Above the reference waveform b) Below the reference waveform
3. Design and rig up suitable circuits to shift the given reference sinusoidal input voltage waveform as shown in the fig.
Vo V0
0 t
-1.5
-6.5 2.5
-11.5 0 t
-2.5
4. Design and rig up suitable circuits for the following transfer function as shown in the fig. For a sinusoidal/triangular input.(any two to be specified)
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 71
5. Design a suitable circuit to clip the reference voltage waveform at two different levels. Also obtain its transfer characteristics.
6. Rig up a suitable circuit for A) Diode positive peak clipping. B) Diode negative peak clipping.
7. Conduct an experiment to determine the gain v/s frequency response, input and output
impedances for a RC coupled single stage BJT amplifier.
8. Conduct an experiment to determine gain, input and output impedances for a Darlington
emitter follower circuit with and without bootstrap.
9. Conduct an experiment to obtain a relationship between the bandwidths for a voltage
series feedback circuit with and without feedback.
10. Design the LC oscillator circuits to generate frequency of oscillations at f=100 khz
Using BJT.
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 72
11. Design and rig up Hartley and colpitts oscillator circuits for a given frequency using BJT.
12. Conduct an experiment to generate the given frequency of an oscillation. (type of the
oscillator to be specified).
13. Conduct a suitable experiment to introduce a phase shift of 1800 at an audio frequency
Range.
14. Conduct a suitable experiment to produce sinusoidal oscillations using RC phase shift network.
15. Conduct a suitable experiment to determine the frequency of oscillations of a given crystal.
16. Determine ripple factor, regulation and efficiency of Half wave Rectifier Circuit with and Without Capacitor filter.
17. Determine ripple factor, regulation and efficiency of center tapped Full wave Rectifier Circuit with
and Without Capacitor filter.
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 73
18. Determine ripple factor, regulation and efficiency of Bridge Rectifier Circuit with and
Without Capacitor filter.
19. Conduct an experiment to verify Thevenin’s Theorem and Maximum Power Transfer theorem. 20. Rig up suitable circuit to determine the Characteristics of Series and Parallel resonant circuits
21. Rig up suitable circuit to determine the Characteristics of RLC circuits.
1N
5221B
- 1N
5263B
— Z
en
er D
iod
es
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
1N5221B - 1N5263B Rev. 1.2.0 1
July 2013
1N5221B - 1N5263BZener Diodes
Absolute Maximum RatingsStresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. Theabsolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Note:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Non-recurrent square wave Pulse Width = 8.3 ms, TA = 50°C
Symbol Parameter Value Units
PD
Power Dissipation 500 mW
Derate above 50°C 4.0 mW°C
TSTG Storage Temperature Range -65 to +200 °C
TJ
Operating Junction Temperature Range -65 to +200 °C
Lead Temperature (1/16 inch from case for 10 s) +230 °C
DO-35 Glass caseCOLOR BAND DENOTES CATHODE
Tolerance = 5%
1N
5221B
- 1N
5263B
— Z
en
er D
iod
es
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
1N5221B - 1N5263B Rev. 1.2.0 2
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted .
Note:
2. Zener Voltage (VZ) The zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (TL) at 30°C ± 1°C and 3/8” lead length.
DeviceVZ (V) @ IZ (2)
ZZ (Ω) @ IZ (mA) ZZK (Ω) @ IZK(mA) IR (µA) @ VR (V)TC
(%/°C)Min. Typ. Max.
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
2.28
2.375
2.565
2.66
2.85
2.4
2.5
2.7
2.8
3
2.52
2.625
2.835
2.94
3.15
30
30
30
30
29
20
20
20
20
20
1,200
1,250
1,300
1,400
1,600
0.25
0.25
0.25
0.25
0.25
100
100
75
75
50
1.0
1.0
1.0
1.0
1.0
-0.085
-0.085
-0.080
-0.080
-0.075
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
3.135
3.42
3.705
4.085
4.465
3.3
3.6
3.9
4.3
4.7
3.465
3.78
4.095
4.515
4.935
28
24
23
22
19
20
20
20
20
20
1,600
1,700
1,900
2,000
1,900
0.25
0.25
0.25
0.25
0.25
25
15
10
5.0
2.0
1.0
1.0
1.0
1.0
1.0
-0.07
-0.065
-0.06
+/-0.055
+/-0.03
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
4.845
5.32
5.7
5.89
6.46
5.1
5.6
6
6.2
6.8
5.355
5.88
6.3
6.51
7.14
17
11
7.0
7.0
5.0
20
20
20
20
20
1,600
1,600
1,600
1,000
750
0.25
0.25
0.25
0.25
0.25
5.0
5.0
5.0
5.0
3.0
2.0
3.0
3.5
4.0
5.0
+/-0.03
0.038
0.038
0.045
0.05
1N5236B
1N5237B
1N5238B
1N5239B
1N5240B
7.125
7.79
8.265
8.645
9.5
7.5
8.2
8.7
9.1
10
7.875
8.61
9.135
9.555
10.5
6.0
8.0
8.0
10
17
20
20
20
20
20
500
500
600
600
600
0.25
0.25
0.25
0.25
0.25
3.0
3.0
3.0
3.0
3.0
6.0
6.5
6.5
7.0
8.0
0.058
0.062
0.065
0.068
0.075
1N5241B
1N5242B
1N5243B
1N5244B
1N5245B
10.45
11.4
12.35
13.3
14.25
11
12
13
14
15
11.55
12.6
13.65
14.7
15.75
22
30
13
15
16
20
20
9.5
9.0
8.5
600
600
600
600
600
0.25
0.25
0.25
0.25
0.25
2.0
1.0
0.5
0.1
0.1
8.4
9.1
9.9
10
11
0.076
0.077
0.079
0.080
0.082
1N5246B
1N5247B
1N5248B
1N5249B
1N5250B
15.2
16.15
17.1
18.05
19
16
17
18
19
20
16.8
17.85
18.9
19.95
21
17
19
21
23
25
7.8
7.4
7.0
6.6
6.2
600
600
600
600
600
0.25
0.25
0.25
0.25
0.25
0.1
0.1
0.1
0.1
0.1
12
13
14
14
15
0.083
0.084
0.085
0.085
0.086
1N5251B
1N5252B
1N5253B
1N5254B
1N5255B
20.9
22.8
23.75
25.65
26.6
22
24
25
27
28
23.1
25.2
26.25
28.35
29.4
29
33
35
41
44
5.6
5.2
5.0
4.6
4.5
600
600
600
600
600
0.25
0.25
0.25
0.25
0.25
0.1
0.1
0.1
0.1
0.1
17
18
19
21
21
0.087
0.088
0.088
0.089
0.090
1N5256B
1N5257B
1N5258B
1N5259B
1N5260B
28.5
31.35
34.2
37.05
40.85
30
33
36
39
43
31.5
34.65
37.8
40.95
45.15
49
58
70
80
93
4.2
3.8
3.4
3.2
3.0
600
700
700
800
900
0.25
0.25
0.25
0.25
0.25
0.1
0.1
0.1
0.1
0.1
23
25
27
30
33
0.09
0.092
0.093
0.094
0.095
1N5261B
1N5262B
1N5263B
44.65
48.45
53.2
47
51
56
49.35
53.55
58.8
105
125
150
2.7
2.5
2.2
1000
1100
1300
0.25
0.25
0.25
0.1
0.1
0.1
36
39
43
0.095
0.096
0.096
VF Forward Voltage = 1.2V Max. @ IF = 200mA
1N
5221B
- 1N
5263B
— Z
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© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
1N5221B - 1N5263B Rev. 1.2.0 3
Top Mark Information
Device Line 1 Line 2 Line 3
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
LOGO
LOGO
LOGO
LOGO
LOGO
22
22
22
22
22
1B
2B
3B
4B
5B
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
LOGO
LOGO
LOGO
LOGO
LOGO
22
22
22
22
23
6B
7B
8B
9B
0B
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
LOGO
LOGO
LOGO
LOGO
LOGO
23
23
23
23
23
1B
2B
3B
4B
5B
1N5236B
1N5237B
1N5238B
1N5239B
1N5240B
LOGO
LOGO
LOGO
LOGO
LOGO
23
23
23
23
24
6B
7B
8B
9B
0B
1N5241B
1N5242B
1N5243B
1N5244B
1N5245B
LOGO
LOGO
LOGO
LOGO
LOGO
24
24
24
24
24
1B
2B
3B
4B
5B
1N5246B
1N5247B
1N5248B
1N5249B
1N5250B
LOGO
LOGO
LOGO
LOGO
LOGO
24
24
24
24
25
6B
7B
8B
9B
0B
1N5251B
1N5252B
1N5253B
1N5254B
1N5255B
LOGO
LOGO
LOGO
LOGO
LOGO
25
25
25
25
25
1B
2B
3B
4B
5B
1N5256B
1N5257B
1N5258B
1N5259B
1N5260B
LOGO
LOGO
LOGO
LOGO
LOGO
25
25
25
25
26
6B
7B
8B
9B
0B
1N5261B
1N5262B
1N5263B
LOGO
LOGO
LOGO
26
26
26
1B
2B
3B
1N
5221B
- 1N
5263B
— Z
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es
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
1N5221B - 1N5263B Rev. 1.2.0 4
Top Mark Information (Continued)
General Requirements:
1.0 Cathode Band
2.0 First Line: F - Fairchild Logo
3.0 Second Line: Device name - For 1Nxx series: 4th to 5th characters of the device name.
For BZxx series: 5th to 6th characters of the device name.
4.0 Third Line: Device name - For 1Nxx series: 6th to 7th characters of the device name.
For BZXyy series: Voltage rating
5.0 Devices shall be marked as required in the device specification (PID or FSC Test Spec).
6.0 Maximum no. of marking lines: 3
7.0 Maximum no. of digits per line: 2
8.0 FSC logo must be 20 % taller than the alphanumeric marking and should occupy the 2 characters of the specified
line.
9.0 Marking Font: Arial (Except FSC Logo)
10.0 First character of each marking line must be aligned vertically.
11.0 All device markings must be based on Fairchild device specification.
1N
5221B
- 1N
5263B
— Z
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es
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
1N5221B - 1N5263B Rev. 1.2.0 5
Physical Dimensions
Figure 1. AXIAL LEADED; GLASS; JEDEC DO204; VARIATION AH (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/DO/DO35A.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-DO35A_TC.pdf.
25.40 MIN
(2X)
0.533
0.460
4.56
3.05
1.91
1.53
NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE STANDARD REFERENCE: JEDEC DO-204, VARIATION AH.
B) HERMETICALLY SEALED GLASS PACKAGE. C) PACKAGE WEIGHT IS 0.137 GRAM. D) ALL DIMENSIONS ARE IN MILLIMETERS. E) DRAWING FILE NAME: DO35AREV02
DO-35
© Fairchild Semiconductor Corporation www.fairchildsemi.com
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.
2Cool
AccuPowerAX-CAP
®*
BitSiC
Build it Now
CorePLUS
CorePOWER
CROSSVOLT
CTL
Current Transfer LogicDEUXPEED
®
Dual Cool™ EcoSPARK
®
EfficientMax
ESBC
Fairchild®
Fairchild Semiconductor®
FACT Quiet SeriesFACT
®
FAST®
FastvCore
FETBench
FPS
F-PFSFRFET
®
Global Power ResourceSM
GreenBridge
Green FPS
Green FPS e-Series
Gmax
GTO
IntelliMAX
ISOPLANARMaking Small Speakers Sound Louder
and Better™
MegaBuck
MICROCOUPLER
MicroFET
MicroPak
MicroPak2
MillerDrive
MotionMax
mWSaver
OptoHiTOPTOLOGIC
®
OPTOPLANAR®
®
PowerTrench®
PowerXS™
Programmable Active DroopQFET
®
QS
Quiet Series
RapidConfigure
Saving our world, 1mW/W/kW at a time™
SignalWise
SmartMax
SMART START
Solutions for Your SuccessSPM
®
STEALTHSuperFET
®
SuperSOT -3
SuperSOT -6
SuperSOT -8 SupreMOS
®
SyncFET
Sync-Lock™
®*
TinyBoost
TinyBuck
TinyCalcTinyLogic
®
TINYOPTO
TinyPower
TinyPWM
TinyWire
TranSiC
TriFault DetectTRUECURRENT
®*
SerDes
UHC®
Ultra FRFET
UniFET
VCX
VisualMax
VoltagePlusXS™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I64
®
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 74
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 75
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 76
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 77
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 78
VALUE(pF) CODE VALUE(pF) VALUE(uF) CODE
1.5pF 1,000pF .001uF 102
3.3pF 1,500pF .0015uF 152
10pF 2,000pF .002uF 202
15pF 2,200pF .0022uF 222
20pF 4,700pF .0047uF 472
30pF 5,000pF .005uF 502
33pF 5,600pF .0056uF 562
47pF 6,800pF .0068uF 682
56pF .01uF 103
68pF .015
75pF .02 203
82pF .022 223
91pF .033 333
100pF 101 .047 473
120pF 121 .05 503
130pF 131 .056 563
150pF 151 .068 683
180pF 181 .1 104
220pF 221 .2 204
330pF 331 .22 224
470pF 471 .33 334
560pF 561 .47 474
680pF 681 .56 564
750pF 751 1 105
820pF 821 2 205
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 79
Capacitor Types and colors:
1pf - 1800pf Yellow Ceramic Disk or Blue or Yellow Monolithics
.001; .01; .022; .047; 0.1; 0.47; 1uF (C96 on
K2) Red Monolithics
Temperature stable caps are marked "NP0", "C0G" or have a black top.
Capacitor Marking Table (Ceramic and Monolithic Cap's)
IMPORTANT: Capacitors with values below 100 pf may be marked two ways: Either with just
two digits (22 pF = "22") or three digits (22 pF = "220",). In the latter case the third digit
signifies the number of zeros following the first two digits. "220" = 22 pF, "221" = 220
pF, "222" = 2200 pF.
VALUE MARKING VALUE MARKING VALUE MARKING
1pf; 3pf; 5pf
1; 3; 5
2.7, 3 or 3.3 pF can be interchanged with each other.
4.7 or 5 pF can be interchanged with each other.
10 pf 10 or 100 0.001 uF 102 0.10 uF 104
12 pf 12 or 120 0.0012uF (1200pf)
122 0.12 uF 124
15 pf 15 or 150 0.0015uF 152 0.15 uf 154
18 pf 18 or 180 0.0018 uF
(1800pf)
182 0.18 uF 184
22 pf 22 or 220 0.0022uF 222 0.22 uF 224
27 pf 27 or 270 0.0027uF 272 0.27 uF 274
33 pf 33 or 330 0.0033 uF
332 0.33 uF 334
39 pf 39 or 390 0.0039uF 392 0.39 uF 394
47 pf 47 or 470 0.0047uF 472 0.47 uF 474
58 pf 58 or 580 0.0056uF 562 0.56 uF 564
68 pf 68 or 680 0.0068uF 682 0.68 uF 684
82 pf 82 or 820 0.0082uF 822 0.82 uF 824
100 pf 101 0.01 uF 103 1uF 105 or 1uf
120 pf 121 0.012 uF 123
150 pf 151 0.015 uF 153
180 pf 181 0.018 uF 183
220 pf 221 0.022 uF 223
270 pf 271 0.027 uF 273
330 pf 331 0.033 uF 333
390 pf 391 0.039 uF 393
470 pf 471 0.047 uF 473
560 pf 561 0.056 uF 563
680 pf 681 0.068 uF 683
820 pf 821
0.082 uF 823
AEC LAB MANUAL
Dept. of ECE, KSSEM Page 80