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ME 6405 Student Lecture
Transistor
Sung-bum Kang
Keun Jae Kim
Hongchul SohnWenei !u
October 1, 2009
Georgia Institute of Technology
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"ontents
#ntroduction to Transistor$S%ea&er' Sung-bum Kang(
)ield E**ect Transistor$S%ea&er' Hongchul Sohn(
+oer Transistor
$S%ea&er' Wenei !u(
,
4
.%%lications o* Transistor$S%ea&er' Wenei !u(
5
/i%olar Junction Transistor$S%ea&er' Keun Jae Kim(
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1Transistor2 +art ,
#ntroduction to Transistor$S%ea&er' Sung-bum Kang(
,
)ield E**ect Transistor$S%ea&er' Hongchul Sohn(
+oer Transistor
$S%ea&er' Wenei !u(
4
.%%lications o* Transistor$S%ea&er' Wenei !u(
5
/i%olar Junction Transistor$S%ea&er' Keun Jae Kim(
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#ntroduction
3uestion ,' Ho can e trans*er originalsignal in long distance ithout loss
.m%li*ier and Electronic Sitch are needed
Amplifier: any deice that changes, usually increases, the amplitude of a signal!
"lectronic #$itch: s$itch that the physical opening and closing is achieed by
applying appropriate electrical control signals!
3uestion ' Ho can e control the T7 ith
remote-controller
3uestion ' Ho can a com%uter recogni8e
0$o**( and ,$on( *or com%uting
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#ntroduction
Earl9 0thcentur9: ;acuum tube as used *or the am%li*ier and sitch
E
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#ntroduction @ +rogress o* Transistor
more than A billion transistors is
%ac&ed into an area o* *ingernail
,A4,: 7acuum Tube
,A4>: the *irst $Bermanium( T?
,A54: Silicon T?
,A5>: #ntegrated "ircuit
Se% 00A: nm silicon a*er
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#ntroduction @ Dnderl9ing Science
Semiconductor is a basic b!ildin' material o most inte'rated circ!its.
is a material that has an electrical resistivity bet%een that o a
cond!ctor and an ins!lator.
has a e% char'e carriersholes or ree electrons/ and may hence be
classiied as almost ins!lator. 0o%ever, the cond!ctivity increases by addin' im&!ritiesdo&in'/.
Siliconis used in most
commercial
semiconductors
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#ntroduction @ Dnderl9ing Science
o%ing &ositive/ty&e do&in' is addin' a certain ty&e o atoms to thesemicond!ctor in order to increase holes.
ty&e semicond!ctor, acce&tor
+ne'ative/ty&e do&in' is addin' some amo!nt o an element %ith
more electrons in order to increase ree electrons. +ty&e semicond!ctor, donor
.dd Brou% ###$/oron(.dd Brou% 7 $+hos%horous(
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#ntroduction @ T9%es o* Transistor
Transistor are categori8ed b9 Semicond!ctor material# 'ermani!m, silicon, 'alli!m arsenide, etc. Str!ct!re# BJT, "T, I8"T :S"T/, I8BT
olarity# ++, + BJTs/; +channel, channel "Ts/
a5im!m &o%er ratin'# lo%, medi!m, hi'h
a5im!m o&eratin' re
Beneral +ur%ose Transistors /i%olar Junction Transistor $/JT(
)ield E**ect Transistors $)ET(
+oer Transistors
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/JT #ntroduction
+
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Beorgia #nstitute o* Technolog9 ,5
/JT "haracteristics
#"is controlled b9 #/$%urrent %ontrol( $beta( is am%li*ication *actor *or
transistor
T9%ical ;alue o* is 0 00iE= iC + iB
iC= iB
VBE= VB VEVCE= VC- VE
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C%erating ?egions
/JT C%erating ?egions
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C%erating ?egions
OperatingRegion
Parameters Mode
Cut Of
VBE
< Vcut-in
VCE > VsupplyIB= IC= 0
Sitc! O""
#inear
VBE= Vcut-in
Vsat< VCE < VsupplyIC= $%IB
&mpli'cation
Saturated
VBE= Vcut-in(
VCE < Vsat
IB> IC(ma)( IC(ma)> Sitc! O*
/JT C%erating ?egions
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Beorgia #nstitute o* Technolog9 ,>
,( "uto** ?egion'
B"> c!t1in, iB ? @ iA ? @, A" s!&&ly
( .cti;e I Linear ?egion' B"? c!t1in, iB @ iA ?iB, sat> A" > s!&&ly
( Saturation ?egion' B"? c!t1in, iB iA,ma5 iA,ma5, A" > sat
7in
7su%%l9
/JT C%erating ?egions
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7Su%%l97in
?/
?"
3uestion' What is the minimum &inthat can use the transistor as an
am%li*ierBi;en'
C DB? 1@ kE
C DA? 1 kE
C F ? 1@@
C S!&&ly? 1@
C c!tin? @.7
C sat ? @.G
i' i%I( 000A>I,00 00A>mA
/JT as .m%li*ier
&in) i'*+'@&'" 0
&supply @ i% N+%@ &%"0
i% $&supply@ &%"( I +%
#et &%" &sat 0!2&
i% $,0 @ 0( I ,000 A>mA
i% (i'
&in i'*+'- &'"
#et &'" &cut)in 0!.&
&in 0!09/*10)*10000 - 0!.&
&in ,6>&or greater
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)rom
rdEercise
Turns onIo**coilsdigitall9
/JT as Sitch
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4
5
, #ntroduction to Transistor$S%ea&er' Sung-bum Kang(
)ield E**ect Transistor$S%ea&er' Hongchul Sohn(
+oer Transistor
$S%ea&er' Wenei !u(
.%%lications o* Transistor$S%ea&er' Wenei !u(
/i%olar Junction Transistor$S%ea&er' Keun Jae Kim(
1Transistor2 +art
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)ield-E**ect Transistors
/asics Aond!ction o a $channel( is controlled by electric ield eect
Three terminals# 'ate, so!rce, drain
olta'econtrolled c!rrent device
control terminal
current channel
o* charge carriers *or charge carriers
control
;oltage
ery little c!rrent lo%s thro!'h in&!t 'ate/ terminals
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)ield-E**ect Transistors
/JT ;s )ET
What %as BJT thenH
= c!rrentcontrolled c!rrent device
Aom&arison
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)ield-E**ect Transistors
T9%es
J)ET $Junction )ET(
MCS)ET $Metal-oide-semiconductor )ET(
"S"T etalsemicond!ctor "T/
0"T 0eterostr!ct!re "T/ :"T od!lation do&ed "T/
I8BT Ins!lated'ate bi&olar transistor/
o%er :S"Ts
D""T ast reverse or ast recovery e&ita5ial diode "T/
IS"T Ionsensitive "T/
+="T
J)ET $Junction )ET(
MCS)ET $Metal-oide-semiconductor )ET(
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J)ETs
J)ETs
nchannel
Beneral +ro%erties =dvanta'es# !ch hi'her in&!t resistance, lo%er noise, easier
abrication, ability to handle hi'her c!rrents and &o%ers
isadvanta'es# Slo%er s&eeds in s%itchin' circ!its, smaller
band%idth or a 'iven 'ain in an am&liier
&channel
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n-channel J)ET
"haracteristics
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n-channel J)ET
"haracteristics
Ideali-ed Static
2(1 )GSD DSS
P
vi I
V= +
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n-channel J)ET
"haracteristics
ractical Static
2(1 ) (1 )GS DS D DSS
P A
v vi I
V V= + +
Transer
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MCS)ETs
MCS)ETs or #nsulated-gate )ET $#B)ET(
nchannel "nhancement
Beneral +ro%erties
In&!t resistance even hi'her
sed &rimarily in di'ital electronic circ!its
rovide controlledso!rce characteristics in am&liier circ!its
nchannel e&letion
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n-channel Enhancement MCS)ET
"haracteristics
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n-channel Enhancement MCS)ET
"haracteristics
ractical2( ) (1 )DS
D GS T
A
vi K v V
V= +2[2( ) ]
D GS T DS DSi K v V v v=
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n-channel e%letion MCS)ET
"haracteristics
ractical2
[2(1 )( ) ( ) ]GS DS DS D DSS
P P P
v v vi I
V V V= +
2(1 ) (1 )GS DS D DSS
P A
v vi I
V V= + +
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Task# esi'n a nchannel commonso!rce J"T =m&liier
.m%li*iers: Sitches
.%%lications
Oou ".< do itPP+sstP Oou can read itPP
htt%'IIelectronics-tutorialssIam%li*ierIam%html
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1Transistor2 +art 4
#ntroduction to Transistor$S%ea&er' Sung-bum Kang(
)ield E**ect Transistor$S%ea&er' Hongchul Sohn(
+oer Transistor$S%ea&er' Wenei !u(
,
.%%lications o* Transistor$S%ea&er' Wenei !u(
/i%olar Junction Transistor$S%ea&er' Keun Jae Kim(
4
5
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+oer Transistor
Aoncerned %ith deliverin' hi'h &o%ersed in hi'h volta'e and hi'h c!rrent a&&lication
In 'eneralabrication &rocess dierent in order to# issi&ate more heat =void breakdo%n
Lo%er 'ain than si'nal level transistor
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+oer /JT
Same str!ct!re to the si'nal level BJT
The active area is distinctively hi'herhi'h c!rrent
ca&acity
Thick and lo%do&ed collector re'ion
Lar'e heat dissi&ation lar'er dimensions
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+oer MCS)ET
Same %orkin' &rinci&les to
:S"T
esi'ned to handle lar'e
&o%er Lo% internal volta'e dro&
and hi'h c!rrent ca&acity
0i'h comm!tation s&eed
and 'ood eiciency at lo%
volta'esKhi'h s&eed s%itch
.%%lications o* Transistor
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.%%lications o* Transistor
building bloc&s *or modern electronics
i'ital lo'ic circ!its icro&rocessors, microcontrollers, chi&s TTL/ hototransistors De&laces normal s%itches, mechanical relays. = converter
"ncoders !lti&le5ers o%er s!&&lies
moreQ
micro%rocessorireless
communication
motorhead%hone:
micro%hone
. li ti $ t (
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.%%lications$cont(
M S%itch or a di'ital si'nal# BJT or :S"T
M S%itch or a analo' si'nal# J"T
M S%itch or a &o%er si'nal# o%er :S"T or BJTM A!rrent controlledc!rrent am&liier# BJT
M olta'e controlledc!rrent am&liier# J"T or :S"T
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Small input voltage and large output current
operated in the cut-off region(open) and saturation region(close)
"5am&le#
G+N9@4 ++
=ss!min' L" re
:!t&!t?@Ko
:!t&!t?)on, the transistor is in sat!ration, %ith base c!rrent
(5 0.7 ) /10 0.43B
I V V K mA= =
Aollector c!rrent L" c!rrent/ is limited
by collector resistor
mAVVVIC
28100/)2.025( ==
/JT as sitches
/JT li*i
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/JT as am%li*iers
.udio am%li*iers: radio *reRuenc9 am%li*iers:
regulated %oer su%%lies
o! input impedance and high voltage gain
"5am&le
S&eaker am&liier
BJT series &rod!ce hi'her 'ain
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.%%lications o* )ET
.d;antages o* )ET o;er /JT
They are devices controlled by volta'e %ith a very hi'h in&!tim&edance 1@7to 1@1Gohms/
"Ts 'enerate a lo%er noise level than the Bi&olar J!nction
Transistor BJT/ "Ts are more stable than BJT %ith tem&erat!re "Ts are easier to man!act!re than the BJT, beca!se they re
e%er ste&s to be b!ilt and they allo% more inte'rated devices in thesame IA
"Ts behave like resistors controlled by volta'e or small drain
so!rce volta'e val!es The hi'h in&!t im&edance o "T allo%s them to %ithhold loads lon'
eno!'h to allo% its !sa'e as stora'e elements
o%er "Ts can dissi&ate hi'her &o%er and can s%itch very lar'e
c!rrents.
. li i * )ET
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.%%lications o* )ET
.m%li*iersCSmall Si'nalCLo% istortionC0i'h 8ainCLo% +oise am&liierCSelectivityC0i'hre
SitchesCAho&&erTy&eC=nalo' 8ateCAomm!nicator
+rotection iodes
CLo%leaka'e
"urrent Limiters
?esistors
Miers
Cscillators
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)ET as analog sitch-eam%le
When 8S? @, "T becomes sat!rated and it behaves like a
small resistance>1@@ ohm/and, thereore,
:T? ODS D3 DS :+//PQ in
DDS, :T + @
When a ne'ative volta'e e
a&&lied to the 'ate, the "T o&erates in the
c!to re'ion and it acts like a very hi'h
resistance !s!ally o some me'a ohms.
0ence o!t&!t volta'e becomes nearlye
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"ontact in*ormation$in order o* %resenting(
Sung-bum Kang sb&anggatechedu
Keun Jae Kim &&im45gatechedu
Hongchul Sohn hsohn=gatechedu Wenei !u ugatechedu
? *
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?e*erences
i&i%ediaorg
googlecom
1#ntroduction to Electrical Engineering2: Mulu&ata S Sarma: C*ord Dni;ersit9 +ress: 00,: "ha% =4>4
)all 00> Transistors Slides
htt%'II-gengcamacu&ImmgIteachingIlinearcircuitsIindehtml
htt%'IIeni&i%ediaorgIi&iI)ET
htt%'IIeni&i%ediaorgIi&iIJ)ET
htt%'IIeni&i%ediaorgIi&iIMCS)ET
htt%'IIslidesharenetIguestb5d>aI*ets
1#ntroduction to Electrical Engineering2: Mulu&ata S Sarma: C*ord Dni;ersit9 +ress: 00,: "ha% =4>4
)all 00> Transistors Slides
htt%'II-gengcamacu&ImmgIteachingIlinearcircuitsIindehtml
htt%'IIeni&i%ediaorgIi&iI)ET
htt%'IIeni&i%ediaorgIi&iIJ)ET
htt%'IIeni&i%ediaorgIi&iIMCS)ET
htt%'IIslidesharenetIguestb5d>aI*ets
htt%'IIelectronicsditieIsta**I9%anarinILecture0I0AImicro%rocessor-athlon-64F%g
htt%'IIbill*r9mirecomIblogI%-contentIu%loadsI00>I05Iireless-communication-connection-,000F%g
htt%'IIc9bermediatechcomIimagesIWirelessHead%hone-bigF%g
htt%'IIcoloradoeduI%h9sicsI%h9s0I%h9s0*a0AI%d*docsI.
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Than& 9ouP
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