TGA2700 X – Band Driver Amplifier
Data Sheet Rev A, October 2019 | Subject to change without notice - 1 of 16 - www.qorvo.com
General Description TGA2700 is an X-band driver amplifier that operates between 7-13 GHz. The amplifier is designed using Qorvo’s proven standard 0.25 um 3MI pHEMT production process. The TGA2700 can provide a typical 30dBm output power at +10 dBm input power and has a high small signal gain of 25 dB. With a small die size of 1.57 x 1.33 mm, the device has DC blockings at both input and output for easy system integration. The TGA2700 is 100% DC and RF tested on-wafer to ensure performance compliance.
Product Features • Frequency Range: 7-13 GHz
• 25 dB Nominal Gain
• 30dBm Output Power @ Pin=10dBm
• 12 dB Input Return Loss
• 10 dB Output Return Loss
• 0.25 um 3MI pHEMT Technology
• Nominal Bias 9V @ 300 mA / 225 mA
• Chip Dimensions: 1.57 x 1.33 x 0.10 mm
(0.062 x 0.052 x 0.004 in)
Measured Performance
Bias conditions: Vd = 9 V, Idq = 300 mA
Applications
General Communication Applications
Point to Point Radios
Electronic Warfare Applications
Ordering Information
Part Description
TGA2700 X-Band Driver Amplifier
TGA2700EVB TGA2700 Evaluation Board, Qty 1
EG7109F Fixtured S-Parameters vs Temperature
Wafer 0412603-02, R27C15, Vds = 9.0 V, Ids = 300 mA
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
7 8 9 10 11 12 13
Frequency (GHz)
Ga
in (
dB
)
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
Re
turn
Lo
ss
(d
B)
Input
Output
Gain
EG7109F Fixtured Data: Pout
Wafer 0412603-01, R17C24, Vds/Ids=9V/300mA
20
22
24
26
28
30
32
34
7 8 9 10 11 12 13
Frequency (GHz)
Ou
tpu
t P
ow
er
at
Pin
= 1
0d
Bm
(d
Bm
)
TGA2700 X – Band Driver Amplifier
Data Sheet Rev A, October 2019 | Subject to change without notice - 2 of 16 - www.qorvo.com
Absolute Maximum Ratings
Parameter Min Value Max Value Units
Drain Voltage (VD) - 10 V V
Gate Voltage Range (VG) -1.2 0 V
Drain Current (IDS_DRIVE) - 536 mA
Gate Current (IG) - 14 mA
Power Dissipation (PDISS) - 3.7 W
Input Power, (CW, 50 Ω ) - 20 dBm
Channel temperature (TCH) - 200 °C
Mounting Temperature (30 Seconds maximum)
- 320 °C
Storage Temperature -65 150 °C
Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and
functional operation of the device at these conditions is not implied. Extended application of Absolute Maximum Rating conditions may
reduce device reliability.
Electrical Specifications
Test conditions unless otherwise noted: 25 °C, VD = 9 V, IDQ = 300 mA, VG = - 0.7 V typical. Data de-embedded to device, bond wire effects are included in data.
Parameter Min Typical Max Units
Operating Frequency Range 7.0 13.0 GHz
Small Signal Gain 25 dB
Input Return Loss 12 dB
Output Return Loss 10 dB
Output Power 30 dBm
Power Added Efficiency (@ Pin = 10 dBm) 27 %
Output TOI (Pin/Tone = -5 dBm, 10 MHz tone spacing) 36 dBm
Recommended Operating Conditions
Parameter Value Units Drain Voltage 9 V
Drain Current (quiescent, IDQ) 300 mA
Gate Voltage (typical) −0.7 V
Operating Temperature Range −40 to 85 °C
Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating
conditions.
TGA2700 X – Band Driver Amplifier
Data Sheet Rev A, October 2019 | Subject to change without notice - 3 of 16 - www.qorvo.com
Performance Plots – Small and Large Signals Test Conditions unless otherwise stated: VD = 9 V, IDQ = 300 mA, 25 °C
EG7109F Fixtured S-Parameters vs Temperature
Wafer 0412603-02, R27C15, Vds = 9.0 V, Ids = 300 mA
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
6 7 8 9 10 11 12 13 14
Frequency (GHz)
Ga
in (
dB
)
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
Re
turn
Lo
ss
(d
B)
Input
Output
Gain
EG7109F Fixtured Data: Pout
Wafer 0412603-01, R17C24, Vds/Ids=9V/300mA
0
5
10
15
20
25
30
35
6 7 8 9 10 11 12 13Frequency (GHz)
Po
ut
(dB
m)
Pin = -2 dBm Pin = 0 dBm Pin = 2 dBm Pin = 4 dBm Pin = 6 dBm
Pin = 8 dBm Pin = 10 dBm
TGA2700 X – Band Driver Amplifier
Data Sheet Rev A, October 2019 | Subject to change without notice - 4 of 16 - www.qorvo.com
Performance Plots – Large Signal Test Conditions unless otherwise stated: VD = 9 V, IDQ = 300 mA, 25 °C
EG7109F Fixtured Data: Pout
Wafer 0412603-01, R17C24, Pin = +10 dBm
10
13
16
19
22
25
28
31
34
6 7 8 9 10 11 12 13
Frequency (GHz)
Po
ut
@ P
in =
+1
0d
Bm
(d
Bm
)
0
5
10
15
20
25
30
35
40
PA
E (%
)
Output Power
PAE
EG7109F Fixtured Data: Pout
Wafer 0412603-01, R17C24, Pin = +10 dBm
0
5
10
15
20
25
30
35
-2 -1 0 1 2 3 4 5 6 7 8 9 10
Input Power (dBm)
Po
ut
(dB
m)
& G
ain
(d
B)
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.55
Id (A
)
Output Power
Id
Gain
@ 10 GHz
TGA2700 X – Band Driver Amplifier
Data Sheet Rev A, October 2019 | Subject to change without notice - 5 of 16 - www.qorvo.com
Performance Plots – Small Signal
Test Conditions unless otherwise stated: VD = 9 V, IDQ = 300 mA, 25 °C
EG7109F Fixtured S-Parameters vs Temperature
Wafer 0412603-01, R17C24, Vds = 9.0 V, Ids = 300 mA
10
12
14
16
18
20
22
24
26
28
30
6 7 8 9 10 11 12 13 14
Frequency (GHz)
Ga
in (
dB
)
-40 deg C
RoomTemp.
+75 deg C
EG7109F Fixtured S-Parameters vs Temperature
Wafer 0412603-01, R17C24, Vds = 9.0 V, Ids = 300 mA
-80
-70
-60
-50
-40
-30
-20
-10
0
6 7 8 9 10 11 12 13 14
Frequency (GHz)
Inp
ut
Re
turn
Lo
ss
(d
B)
-40
-30
-20
-10
0
10
20
30
40
Ou
tpu
t Re
turn
Lo
ss
(dB
)
-40 Deg C - S11 Room Temp. - S11 +75 deg. C - S11
-40 Deg C - S22 Room Temp. - S22 +75 deg. C - S22
TGA2700 X – Band Driver Amplifier
Data Sheet Rev A, October 2019 | Subject to change without notice - 6 of 16 - www.qorvo.com
Performance Plots – Linearity
Test Conditions unless otherwise stated: VD = 9 V, IDQ = 300 mA, Tone Spacing = 10 MHz, 25 °C
0
5
10
15
20
25
30
35
40
45
50
9 11 13 15 17 19 21 23 25
Output Power/Tone (dBm)
IMD
3 (
dB
c) 8 GHz
9 GHz
10 GHz
11 GHz
12 GHz
13 GHz
30
31
32
33
34
35
36
37
38
39
40
8 8.5 9 9.5 10 10.5 11 11.5 12 12.5 13
Frequency (GHz)
Ou
tpu
t T
OI @
Pin
=-5
dB
m
TGA2700 X – Band Driver Amplifier
Data Sheet Rev A, October 2019 | Subject to change without notice - 7 of 16 - www.qorvo.com
Performance Plots – Linearity
Test Conditions unless otherwise stated: VD = 9 V, IDQ = 300 mA, Tone Spacing = 10 MHz, 25 °C
28
29
30
31
32
33
34
35
36
37
38
39
40
12 14 16 18 20 22 24 26
Output Power/tone (dBm)
Ou
tpu
t T
OI (d
Bm
)
8 GHz
9 GHz
10 GHz
11 GHz
12 GHz
TGA2700 X – Band Driver Amplifier
Data Sheet Rev A, October 2019 | Subject to change without notice - 8 of 16 - www.qorvo.com
Performance Plots – Small and Large Signals
Test Conditions unless otherwise stated: VD = 9 V, IDQ = 225 mA, 25 °C
EG7109F Fixtured S-Parameters
Wafer 0412603-02, R27C15, Vds = 9.0 V, Ids = 225 mA
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
6 7 8 9 10 11 12 13 14
Frequency (GHz)
Ga
in (
dB
)
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
Re
turn
Lo
ss
(d
B)
Input
Output
Gain
EG7109F Fixtured Data: Pout
Wafer 0412603-02, R17C42, Vds/Ids=9V/225mA
0
5
10
15
20
25
30
35
6 7 8 9 10 11 12 13Frequency (GHz)
Po
ut
(dB
m)
Pin = -2 dBm Pin = 0 dBm Pin = 2 dBm Pin = 4 dBm Pin = 6 dBm
Pin = 8 dBm Pin = 10 dBm
TGA2700 X – Band Driver Amplifier
Data Sheet Rev A, October 2019 | Subject to change without notice - 9 of 16 - www.qorvo.com
Performance Plots – Large Signal
Test Conditions unless otherwise stated: VD = 9 V, IDQ = 225 mA, 25 °C.
EG7109F Fixtured Data: Pout
Wafer 0412603-01, R17C24, Pin = +10 dBm
0
5
10
15
20
25
30
35
-2 -1 0 1 2 3 4 5 6 7 8 9 10
Input Power (dBm)
Po
ut
(dB
m)
& G
ain
(d
B)
0.2
0.22
0.24
0.26
0.28
0.3
0.32
0.34
0.36
0.38
0.4
Id (A
)
Id
@ 10 GHz
Output Power
Gain
@ 10 GHz
EG7109F Fixtured Data: Pout
Wafer 0412603-01, R17C24, Pin = +10 dBm
10
13
16
19
22
25
28
31
34
6 7 8 9 10 11 12 13
Frequency (GHz)
Po
ut
@ P
in =
+1
0d
Bm
(d
Bm
)
0
5
10
15
20
25
30
35
40
PA
E (%
)
Output Power
PAE
TGA2700 X – Band Driver Amplifier
Data Sheet Rev A, October 2019 | Subject to change without notice - 10 of 16 - www.qorvo.com
Performance Plots – Linearity
Test Conditions unless otherwise stated: VD = 9 V, IDQ = 225 mA, Tone Spacing = 10 MHz, 25 °C.
0
5
10
15
20
25
30
35
40
45
50
9 11 13 15 17 19 21 23 25
Output Power/Tone (dBm)
IMD
3 (
dB
c) 8 GHz
9 GHz
10 GHz
11 GHz
12 GHz
13 GHz
30
31
32
33
34
35
36
8 8.5 9 9.5 10 10.5 11 11.5 12 12.5 13
Frequency (GHz)
Ou
tpu
t T
OI @
Pin
=-5
dB
m
TGA2700 X – Band Driver Amplifier
Data Sheet Rev A, October 2019 | Subject to change without notice - 11 of 16 - www.qorvo.com
Performance Plots – Linearity
Test Conditions unless otherwise stated: VD = 9 V, IDQ = 225 mA, Tone Spacing = 10 MHz, 25 °C.
30
31
32
33
34
35
36
37
12 14 16 18 20 22 24 26
Output Power/tone (dBm)
Ou
tpu
t T
OI (d
Bm
)
8 GHz
9 GHz
10 GHz
11 GHz
12 GHz
TGA2700 X – Band Driver Amplifier
Data Sheet Rev A, October 2019 | Subject to change without notice - 12 of 16 - www.qorvo.com
Thermal and Reliability Information
Parameter Test Conditions Value Units
Thermal Resistance (θJC) (1) Tbase = 70°C, VD = 9 V, IDQ = 225 mA
Quiescent/Small Signal operation
PDISS = 2.0 W
34.7 °C/W
Channel Temperature (TCH) 140.0 °C
Median Lifetime (TM) 2.4E06 Hrs
Notes:
1. Thermal resistance is referenced to back of the metal carrier.
2. Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted on a 20 mil CuMo carrier.
3. Worst case thermal condition is small signal or no RF applied.
Median Lifetime vs Channel Temperature
1.E+04
1.E+05
1.E+06
1.E+07
1.E+08
1.E+09
1.E+10
1.E+11
1.E+12
1.E+13
25 50 75 100 125 150 175 200
Channel Temperature ( C)
Med
ian
Lif
eti
me (
Ho
urs
)
FET3
°
TGA2700 X – Band Driver Amplifier
Data Sheet Rev A, October 2019 | Subject to change without notice - 13 of 16 - www.qorvo.com
Mechanical Drawing and Bond Pad Description
Unit: millimeters. Die thickness: 0.10, Die x, y size tolerance: +/- 0.050 Chip edge to bond pad dimensions are shown to center of pad
Backside of die is ground
Pad No. Label Pad Size (um) Description
1 RF Input 0.105 x 0.180 RF Input Port, matched to 50 ohms, DC blocked
2 VD 0.098 x 0.098 Drain Voltage
3 RF output 0.105 x 0.180 RF Output Port, matched to 50 ohms, DC blocked
4 VG 0.098 x 0.098 Gate Voltage Control
TGA2700 X – Band Driver Amplifier
Data Sheet Rev A, October 2019 | Subject to change without notice - 14 of 16 - www.qorvo.com
Circuit Assembly and Biasing Sequence
Bias-up Procedure Bias-down Procedure
1. Set ID limit to 536 mA, IG limit to 14 mA 1. Turn off RF signal
2. Set VG to −1.2 V 2. Reduce VG to −1.2 V. Ensure IDQ ~ 0mA
3. Set VD +9 V 3. Set VD to 0V
4. Adjust VG more positive until IDQ = 300mA (VG ~ −0.7 V Typical)
4. Turn off VD supply
5. Apply RF signal 5. Turn off VG supply
RF IN
Vd
RF OUT
Vg
1000 pF
1000 pF
33 uF
17 ohmVg
TGA2700 X – Band Driver Amplifier
Data Sheet Rev A, October 2019 | Subject to change without notice - 15 of 16 - www.qorvo.com
Assembly Notes
Component placement and adhesive attachment assembly:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment (i.e. epoxy) can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Reflow process assembly:
Use AuSn (80/20) solder and limit exposure to temperatures above 300 °C to 3-4 minutes, maximum.
An alloy station or conveyor furnace with reducing atmosphere should be used.
Do not use any kind of flux.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Interconnect process assembly:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonic are critical parameters.
Aluminum wire should not be used.
Devices with small pad sizes should be bonded with 0.0007-inch wire.
TGA2700 X – Band Driver Amplifier
Data Sheet Rev A, October 2019 | Subject to change without notice - 16 of 16 - www.qorvo.com
Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.
Copyright 2019 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
RoHS Compliance This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU.
This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine) • Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations:
Tel: 1-844-890-8163
Web: www.qorvo.com
Email: [email protected]
Handling Precautions
Parameter Rating Standard
Caution! ESD-Sensitive Device
ESD – Human Body Model (HBM) TBD ESDA / JEDEC JS-001-2012
ESD – Charged Device Model (CDM) TBD ESDA / JEDEC JS-002-2014