Technology Development on High Power IGBTsfor Demanding New Energy Applications
ZhuZhou CRRC Times Electric Co LtdZhuZhou CRRC Times Electric Co., Ltd.State key Lab. of Advanced Power Semiconductor Devices
NOV. 5th 2017, Haihui Luowww.crrcgc.cc
CONTENTSCONTENTS
01 02 0301 02 03
IGBT Application requirements
CRRC IGBTInnovation
Technology trends
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Demanding applications promote IGBT technolog de elopment
1.1 Application flieds
Demanding applications promote IGBT technology development
Driving force
ntel
opm
en
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Dev
e
1.2 Application Requiremets & Technology innovation
IGBT performance improvement relies on technology innovation
Performance Demand Technology Innovation
Low loss, Wide SOA, Controllability Recessed-Emitter-Trench IGBTLow loss, Wide SOA, Controllability Recessed Emitter Trench IGBT
Oscillation free FRD with optimized plasma behaviours
High power capacity Large die size
Double sided cooling chip andlow Rth, High power density Double-sided cooling chip and module
High reliability Copper interconnection
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High reliability Copper interconnection
Low On-State Loss2.1 RET & RDT Cell for Micro-pattern IGBT
RET (Recessed-Emitter-Trench) structure
• RET-IGBT improves the VCE(ON)-EOFF Tradeoff considerably
Emitter
P PP+
N+ N+
Emitter
P PP+P+
N+ N+
CS layer
PP
GG
CS layer
PG P DT
CS layer
PP P
GG
CS layer
P
CS layer
1.2 μm
G P DT
RET
Conventional RET Cell Comparison of VCE(ON)-EOFF Tradeoff
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Ian Deviny, Haihui Luo*, et al., ISPSD2017, P147-150
Modulated Hole Path 2.1 RET & RDT Cell for Micro-pattern IGBT
RET (Recessed-Emitter-Trench) structure
• RET structure modulate the carrier path
N+
P
N+ N+
P
N+
P
Simulation of hole flow during short circuit
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Safe Operation Area 2.1 RET & RDT Cell for Micro-pattern IGBT
RET (Recessed-Emitter-Trench) structure• RET structure modulate the carrier path
• RBSOA : 11x rated current turning off—— Latch-up is more difficult to be triggeredRBSOA : 11x rated current turning off Latch up is more difficult to be triggered
• SCSOA: Vgeon24V (Isc>14* Inom) &15μs withstand——Short-circuit failure mode is thermal failure
440℃
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11x rated current switching off 14x rated current &15μs short circuit
2.2 FRD with Optimized Plasma Behaviour Proton Behaviours
Implant proton for n-type buffer and lifetime control• Optimize�the�Proton�Implant�Condition�
Electron Proton Helium
Proton in FRD Deep level defect
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Maolong, Haihui Luo, et al., PCIM Europe 2016, Nuremberg
I l t t f t b ff d lif ti t l
Oscillation Free2.2 FRD with Optimized Plasma BehaviourImplant proton for n-type buffer and lifetime control
• High�Ruggedness
• Low�Recovery�Energy
• Oscillation�Free
3*Inomnom
O ill ti f t 1/10 I
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3x Inom reverse recovery Vf-Erec trade off improvement Oscillation free at 1/10 Inom
High Power Capacity2.3 Large Die Size
Large die size for high power capacity• Bigger�die�size,�active�area�ratio�increased�dramatically�for�high�Voltage
More yield loss by killing defect challenges process capability• More�yield�loss�by�killing�defect�challenges�process�capability
eld
loss
ctiv
e ar
ea
Rat
io o
f Yie
Rat
io o
f ac
killing defect countsRating voltage (V)
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gg g ( )
High Power Capacity2.3 Large Die Size
Pressure-contacted IGBT module
• Optimized�pressure�distribution�uniformity
• Rectangle ceramic package design along with large size die current density significantly increased• Rectangle�ceramic�package�design�along�with�large-size�die,�current�density�significantly�increased�
Collector Moly
IGBT/FRD Chip
Emitter Moly
IGBT Gate Spring
Insulating Locator
Individually Testable
IGBT/FRD Sub‐unit
4.5kV Corner
Gate IGBT Chip
4.5kV FRD Chip
Gate Return PCB
Auxiliary
Terminals for
Gate Driver
Rectangle
Ceramic
Housing
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4500V/3000A Pressure-contacted IGBT module(Targeting 4500A)
2.4 Double-sided cooling Low Thermal Resistance
Double-sided cooling(DSC) module
• DSC�shows�23%�lower�Rth with�respect�to�Pin-Fin cooling�or�conventional�cooling
0.09
0.12
0.15
W)
DSC Module DLC Module Conventional Module
with Grease
Pin‐Fin Direct liquid coolingDouble‐sided cooling module0.00
0.03
0.06
0.09
J−H
Rth
(K/W
J−C
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Yangang Wang, Yun Li, et al., PCIM Europe 2017, Nuremberg
2.4 Double-sided cooling High Power Density
High power density IPU
• The�Integrated�Power�Unit (IPU)�is�specially�designed�for�electric�vehicle�
• High power density high reliability and low cost design• High�power�density,�high�reliability�and�low�cost�design
IPU efficiency (tested at DC400V and traction mode)
Integrated Power Module (HIPA)
Integrated Power Unit(IPU)
Double-sided Cooling IGBT Module
Energy consuming comparison in the NEDC driving cycle
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2.5 Copper Interconnection High Reliability
Copper interconnection technology
• Cu�Metallization+�Cu�bonding�+�Ultrasonic�terminal�bonding.�
• Excellent conductivity and thermal performance• Excellent�conductivity�and�thermal�performance
Copper layer Copper wire
Cross‐section of Cu wire bonding Cu wire bonded substrate and module
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Maolong, Haihui Luo, et al., PCIM Europe 2015, Nuremberg
High Reliability2.5 Copper Interconnection
Copper interconnection technology: Reliability significantly improved• 20%�higher�surge�current�capability
5 ti hi h li bilit• >5�times�higher�power�cycling�ability
Aluminum
Copper
Electro‐thermal FE simulation Surge current: Al Vs Cu PC life‐time: Al Vs Cu
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g
2.6 Application flieds
ApplicationIGBT��ModuleIGBT��Chip
RET+RDT
Proton Implant Optimization
Copper
Large die size Press packg
Double side solderable
Double-sided Cooling
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3 Technology Trends
Nano-pattern IGBT
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Low loss IGBT with Partially Narrow Mesa Structure, Masakiyo Sumitomo, 24th ISPSD, Belgium
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3 Technology Trends
SJ IGBT
SJ FS IGBT SJ NPT IGBT
Source: K.H. Oh, et al. Trinno Technology, ISPSD 2016
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3 Technology Trends
Full-Copper Module
Copper chip�metallization
C i b diInterconnect Copper wire�bonding
Copper terminal�USW
Die Attach Copper Sintering
Heat Spread Copper heat-sink�baseplateI l ti LIsolation Layer
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G N SiC
3 Technology Trends
GaN, SiC
Injection Control Technique for High Speed Switching with a double gate PNM-IGBT Masakiyo Sumitomo, 25th ISPSD, Kanazawa
How Power Electronics will reshape to meet the 21st century challenges? Pierric Gueguen, 27th ISPSD,2015, Hong Kong
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y
h k f iThank you for your attention!
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