Technology Development on IGBT for Demanding New Energy

Technology Development on High Power IGBTsfor Demanding New Energy Applications

ZhuZhou CRRC Times Electric Co LtdZhuZhou CRRC Times Electric Co., Ltd.State key Lab. of Advanced Power Semiconductor Devices

NOV. 5th 2017, Haihui Luowww.crrcgc.cc

CONTENTSCONTENTS

01 02 0301 02 03

IGBT Application requirements

CRRC IGBTInnovation

Technology trends

中国中车股份有限公司版权所有 20152

Demanding applications promote IGBT technolog de elopment

1.1 Application flieds

Demanding applications promote IGBT technology development

Driving force

ntel

opm

en


Dev

e

1.2 Application Requiremets & Technology innovation

IGBT performance improvement relies on technology innovation

Performance Demand Technology Innovation

Low loss, Wide SOA, Controllability Recessed-Emitter-Trench IGBTLow loss, Wide SOA, Controllability Recessed Emitter Trench IGBT

Oscillation free FRD with optimized plasma behaviours

High power capacity Large die size

Double sided cooling chip andlow Rth, High power density Double-sided cooling chip and module

High reliability Copper interconnection


High reliability Copper interconnection

Low On-State Loss2.1 RET & RDT Cell for Micro-pattern IGBT

RET (Recessed-Emitter-Trench) structure

• RET-IGBT improves the VCE(ON)-EOFF Tradeoff considerably

Emitter

P PP+

N+ N+

Emitter

P PP+P+

N+ N+

CS layer

PP

GG

CS layer

PG P DT

CS layer

PP P

GG

CS layer

P

CS layer

1.2 μm

G P DT

RET

Conventional RET Cell Comparison of VCE(ON)-EOFF Tradeoff

5 中国中车股份有限公司版权所有 2015

Ian Deviny, Haihui Luo*, et al., ISPSD2017, P147-150

Modulated Hole Path 2.1 RET & RDT Cell for Micro-pattern IGBT

RET (Recessed-Emitter-Trench) structure

• RET structure modulate the carrier path

N+

P

N+ N+

P

N+

P

Simulation of hole flow during short circuit


Safe Operation Area 2.1 RET & RDT Cell for Micro-pattern IGBT

RET (Recessed-Emitter-Trench) structure• RET structure modulate the carrier path

• RBSOA : 11x rated current turning off—— Latch-up is more difficult to be triggeredRBSOA : 11x rated current turning off Latch up is more difficult to be triggered

• SCSOA: Vgeon24V (Isc>14* Inom) &15μs withstand——Short-circuit failure mode is thermal failure

440℃


11x rated current switching off 14x rated current &15μs short circuit

2.2 FRD with Optimized Plasma Behaviour Proton Behaviours

Implant proton for n-type buffer and lifetime control• Optimize�the�Proton�Implant�Condition�

Electron Proton Helium

Proton in FRD Deep level defect


Maolong, Haihui Luo, et al., PCIM Europe 2016, Nuremberg

I l t t f t b ff d lif ti t l

Oscillation Free2.2 FRD with Optimized Plasma BehaviourImplant proton for n-type buffer and lifetime control

• High�Ruggedness

• Low�Recovery�Energy

• Oscillation�Free

3*Inomnom

O ill ti f t 1/10 I


3x Inom reverse recovery Vf-Erec trade off improvement Oscillation free at 1/10 Inom

High Power Capacity2.3 Large Die Size

Large die size for high power capacity• Bigger�die�size,�active�area�ratio�increased�dramatically�for�high�Voltage

More yield loss by killing defect challenges process capability• More�yield�loss�by�killing�defect�challenges�process�capability

eld

loss

ctiv

e ar

ea

Rat

io o

f Yie

Rat

io o

f ac

killing defect countsRating voltage (V)


gg g ( )

High Power Capacity2.3 Large Die Size

Pressure-contacted IGBT module

• Optimized�pressure�distribution�uniformity

• Rectangle ceramic package design along with large size die current density significantly increased• Rectangle�ceramic�package�design�along�with�large-size�die,�current�density�significantly�increased�

Collector Moly

IGBT/FRD Chip

Emitter Moly

IGBT Gate Spring

Insulating Locator

Individually Testable

IGBT/FRD Sub‐unit

4.5kV Corner

Gate IGBT Chip

4.5kV FRD Chip

Gate Return PCB

Auxiliary

Terminals for

Gate Driver

Rectangle

Ceramic

Housing


4500V/3000A Pressure-contacted IGBT module（Targeting 4500A）

2.4 Double-sided cooling Low Thermal Resistance

Double-sided cooling(DSC) module

• DSC�shows�23%�lower�Rth with�respect�to�Pin-Fin cooling�or�conventional�cooling

0.09

0.12

0.15

W)

DSC Module DLC Module Conventional Module

with Grease

Pin‐Fin Direct liquid coolingDouble‐sided cooling module0.00

0.03

0.06

0.09

J−H

Rth

(K/W

J−C


Yangang Wang, Yun Li, et al., PCIM Europe 2017, Nuremberg

2.4 Double-sided cooling High Power Density

High power density IPU

• The�Integrated�Power�Unit (IPU)�is�specially�designed�for�electric�vehicle�

• High power density high reliability and low cost design• High�power�density,�high�reliability�and�low�cost�design

IPU efficiency (tested at DC400V and traction mode)

Integrated Power Module （HIPA）

Integrated Power Unit（IPU）

Double-sided Cooling IGBT Module

Energy consuming comparison in the NEDC driving cycle


2.5 Copper Interconnection High Reliability

Copper interconnection technology

• Cu�Metallization+�Cu�bonding�+�Ultrasonic�terminal�bonding.�

• Excellent conductivity and thermal performance• Excellent�conductivity�and�thermal�performance

Copper layer Copper wire

Cross‐section of Cu wire bonding Cu wire bonded substrate and module


Maolong, Haihui Luo, et al., PCIM Europe 2015, Nuremberg

High Reliability2.5 Copper Interconnection

Copper interconnection technology: Reliability significantly improved• 20%�higher�surge�current�capability

5 ti hi h li bilit• ＞5�times�higher�power�cycling�ability

Aluminum

Copper

Electro‐thermal FE simulation Surge current: Al Vs Cu PC life‐time: Al Vs Cu


g

2.6 Application flieds

ApplicationIGBT��ModuleIGBT��Chip

RET+RDT

Proton Implant Optimization

Copper

Large die size Press packg

Double side solderable

Double-sided Cooling


3 Technology Trends

Nano-pattern IGBT


Low loss IGBT with Partially Narrow Mesa Structure, Masakiyo Sumitomo, 24th ISPSD, Belgium

17

3 Technology Trends

SJ IGBT

SJ FS IGBT SJ NPT IGBT

Source: K.H. Oh, et al. Trinno Technology, ISPSD 2016


3 Technology Trends

Full-Copper Module

Copper chip�metallization

C i b diInterconnect Copper wire�bonding

Copper terminal�USW

Die Attach Copper Sintering

Heat Spread Copper heat-sink�baseplateI l ti LIsolation Layer


G N SiC

3 Technology Trends

GaN, SiC

Injection Control Technique for High Speed Switching with a double gate PNM-IGBT Masakiyo Sumitomo, 25th ISPSD, Kanazawa

How Power Electronics will reshape to meet the 21st century challenges? Pierric Gueguen, 27th ISPSD,2015, Hong Kong


y

h k f iThank you for your attention！

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Technology Development on IGBT for Demanding New Energy