Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only. Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration Regulations (EAR). Export out of the U.S. may require a U.S. Bureau of Industry and Security export license.
Preliminary Datasheet Revision: April 2019
APN31847.2-51.4 GHz GaN Power Amplifier
Web: http://www.as.northropgrumman.com/mps©2019 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected]
Product Features RF frequency: 47.2 to 51.4 GHz
Linear Gain: 15-18 dB across the band
Psat: 10-12 Watt across the band
Die Size: 6.4 mm2.
0.15um GaN HEMT Process
4 mil SiC substrate
DC Power: 24 VDC @ 200 mA/mm
Product DescriptionThe APN318 GaN HEMT Power/Driver
amplifier is a three-stage Single-ended
power device, designed for use in 5G
wireless and SatCom Terminals. To ensure
rugged and reliable operation, HEMT devices
are fully passivated. Both bond pad and
backside metallization are Au-based that is
compatible with epoxy and eutectic die
attach methods.
Applications 5G Wireless
Internet of Things (IoT)
SatCom Terminals
Page 1
X = 3.2mm Y = 2.0mm
Specification Min Typ Max UnitFrequency 47.2 51.4 GHzLinear Gain 15 15.5 18 dBInput Return Loss 12 dBOutput Return Loss 8 10 dBPsat (Simulation*) 10 12 WattPAE (Simulation*) 20 %Vd1=Vd1a=Vd2=Vd2a=Vd3=Vd3a 20 24 28 VVg1, Vg1a, Vg2, Vg2a, Vg3, Vg3a -3.5 VId1+Id1a 220 mAId2+Id2a 440 mAId3+Id3a 960 mA
Parameter Min Max UnitDC Pwer 7 W/mmVd1=Vd1a=Vd2=Vd2a=Vd3=Vd3a 20 28 VId1+Id1a 385** 275*** mAId2+Id3a 770** 550*** mAId3+Id3a 1680 1200 mAVg1, Vg1a, Vg2, Vg2a, Vg3, Vg3a -5 0 VAssy. Temperature 300 deg. C
* Simulation Performance
Parameter Min Max UnitOperational Ambient Temp -65 125 deg. COperational Junction Temp -65 200 deg. CStorage Temp -65 150 deg. C
** Calculated With Vd=20V *** Calculated With Vd=28V
Maximum SOA Ratings (Ta = 25°C)
Bare Die Temperature Conditions
Performance Characteristics (Ta = 25°C)
Approved for Public Release; NG19-0583
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only. Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration Regulations (EAR). Export out of the U.S. may require a U.S. Bureau of Industry and Security export license.
Preliminary Datasheet Revision: April 2019
APN31847.2-51.4 GHz GaN Power Amplifier
Web: http://www.as.northropgrumman.com/mps©2019 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected]
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80Frequency (GHz)
Circuit Gain (Wideband)
-10
-5
0
5
10
15
20
25
30
Gain
(dB
)
Circuit Gain vs. Frequency (Narrow Band)
Simulated Performance Characteristics (Typical Performance at 25°C) Vd = 24.0 V, Id1 + Id1a = 220 mA, Id2 + Id2a = 440 mA, Id3 + Id3a = 960 mA
Circuit Gain vs. Frequency (Wide Band)
Return Loss vs. Frequency (Wide Band)
Page 2
Return Loss vs. Frequency (Narrow Band)
45 46 47 48 49 50 51 52 53 54Frequency (GHz)
Circuit Gain (Narrowband)
02468
101214161820222426
Gain
(dB
)
45 46 47 48 49 50 51 52 53Frequency (GHz)
Circuit Return Loss
-30
-25
-20
-15
-10
-5
0
Retu
rn L
oss
(dB
)
Blue: InputRed: Output
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80Frequency (GHz)
Circuit Return Loss (Wideband)
-30
-25
-20
-15
-10
-5
0
Retu
rn L
oss
(dB
)
Blue: InputRed: Output
Approved for Public Release; NG19-0583
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only. Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration Regulations (EAR). Export out of the U.S. may require a U.S. Bureau of Industry and Security export license.
Preliminary Datasheet Revision: April 2019
APN31847.2-51.4 GHz GaN Power Amplifier
Web: http://www.as.northropgrumman.com/mps©2019 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected]
Circuit Gain vs. Frequency (Narrow Band)
Simulated Performance Characteristics (Typical Performance at 25°C) * Uncorrelated Monte Carlo for Distribution Vd = 24.0 V, Id1 + Id1a = 220 mA, Id2 + Id2a = 440 mA, Id3 + Id3a = 960 mA
Circuit Gain vs. Frequency (Wide Band)
Return Loss vs. Frequency (Wide Band)
Page 3
Return Loss vs. Frequency (Narrow Band)
Blue: InputRed: Output
Blue: InputRed: Output
45 46 47 48 49 50 51 52 53 54Frequency (GHz)
Circuit Gain (Narrowband)
02468
101214161820222426
Gain
(dB
)
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80Frequency (GHz)
Circuit Gain (Wideband)
-10
-5
0
5
10
15
20
25
30
Gain
(dB
)
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80Frequency (GHz)
Circuit Return Loss (Wideband)
-30
-25
-20
-15
-10
-5
0
Retu
rn L
oss
(dB
)
45 46 47 48 49 50 51 52 53Frequency (GHz)
Circuit Return Loss
-30
-25
-20
-15
-10
-5
0
Retu
rn L
oss
(dB
)
Approved for Public Release; NG19-0583
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only. Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration Regulations (EAR). Export out of the U.S. may require a U.S. Bureau of Industry and Security export license.
Preliminary Datasheet Revision: April 2019
APN31847.2-51.4 GHz GaN Power Amplifier
Web: http://www.as.northropgrumman.com/mps©2019 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected]
Output Power vs. Input PowerSimulated Performance
Simulated Power Performance Characteristics (Typical Performance at 25°C) Vd = 24.0 V, Id1 + Id1a = 220 mA, Id2 + Id2a = 440 mA, Id3 + Id3a = 960 mA
Page 4
Drain Current vs. Input PowerSimulated Performance
-10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28Power (dBm)
PIPO
0
5
10
15
20
25
30
35
40
45
50
Pout (d
Bm
), G
ain
(dB
)
0
5
10
15
20
25
30
35
40
45
50
PA
E (%
)
m4:24.06 dBm21.96Freq = 49 GHz
m3:24.07 dBm41.22 dBmFreq = 49 GHz
m2:24.04 dBm17.18 dBFreq = 49 GHz
m1:-9.591 dBm23.24 dBFreq = 49 GHz
46 47 48 49 50 51 52 53Frequency (GHz)
Power Frequency Sweep (@6dB Comp.)
0
5
10
15
20
25
30
35
40
45
50
Pout (d
Bm
), G
ain
(dB
)
0
5
10
15
20
25
30
35
40
45
50
PA
E (%
)
Blue: GainRed: PoutGreen: PAE
Blue: GainRed: PoutGreen: PAE
@ Psat (6dB comp.)
Output Power and Gain vs. Frequency Simulated Performance
-10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28Power (dBm)
PIPO Current (49 GHz)
0
50
100
150
200
250
Curre
nt (m
A)
p14p4p13p3
p12p11p10p2p9p8p7p1
p6p5
m1:16.05 dBm147 mAFreq = 49 GHz
m3:25.02 dBm117.9 mAFreq = 49 GHz
m2:20.25 dBm122.3 mAFreq = 49 GHz
Stage 1Stage 2Stage 3
Stages compress in order from last to first
20% current increase points marked
Approved for Public Release; NG19-0583
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only. Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration Regulations (EAR). Export out of the U.S. may require a U.S. Bureau of Industry and Security export license.
Preliminary Datasheet Revision: April 2019
APN31847.2-51.4 GHz GaN Power Amplifier
Web: http://www.as.northropgrumman.com/mps©2019 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected] Page 5
Die Size and Bond Pad Locations(Not to Scale)
Biasing/De-Biasing Details:Bias for 1st must be from both sides.
Listed below are some guidelines for GaN device testing and wire bonding:a. Limit positive gate bias (G-S or G-D) to < 1Vb. Know your devices’ breakdown voltagesc. Use a power supply with both voltage and current limit.d. With the power supply off and the voltage and current levels at minimum, attach the ground lead to
your test fixture.i. Apply negative gate voltage (-5 V) to ensure that all devices are offii. Ramp up drain bias to ~10 Viii. Gradually increase gate bias voltage while monitoring drain current until 20% of the operating
current is achievediv. Ramp up drain to operating biasv. Gradually increase gate bias voltage while monitoring drain current until the operating current
is achievede. To safely de-bias GaN devices, start by debiasing output amplifier stages first (if applicable):
i. Gradually decrease drain bias to 0 V.ii. Gradually decrease gate bias to 0 V.iii. Turn off supply voltages
X = 3200 µm ± 25 µmY = 2000 ± 25 µmDC Bond Pad = 100 x 100 ± 0.5 µmRF Bond Pad = 100 x 100 ± 0.5 µmChip Thickness = 101 ± 5 µm
3200 µm
1000 µm
RFINGND
GNDRFOUT
GND
GND
VG
1A
VD
1AG
ND
GN
DG
ND
198 µm
1000 µm
2000 µm
VG
2A
VD
2AG
ND
VG
3A
VD
3A
GN
DG
ND
GN
D
809 µm1218 µm
1617 µm2026 µm
2737 µm
VG
1
VD
1G
ND
GN
DG
ND
198 µm
VG
2
VD
2G
ND
VG
3
VD
3
GN
DG
ND
GN
D
809 µm1218 µm
1617 µm
2026 µm
2737 µm
Approved for Public Release; NG19-0583
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only. Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration Regulations (EAR). Export out of the U.S. may require a U.S. Bureau of Industry and Security export license.
Preliminary Datasheet Revision: April 2019
APN31847.2-51.4 GHz GaN Power Amplifier
Web: http://www.as.northropgrumman.com/mps©2019 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected] Page 6
Recommended Assembly Notes1. Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils
from the amplifier.2. Best performance obtained from use of <10 mil (long) by 3 by 0.5 mil ribbons on input and output.3. Part must be biased from both sides as indicated.4. The 0.1uF, 50V capacitors are not needed if the drain supply line is clean. If Drain Pulsing of the device
is to be used, do NOT use the 0.1uF , 50V Capacitors.Mounting ProcessesMost NGAS GaN IC chips have a gold backing and can be mounted successfully using either a conductive
epoxy or AuSn attachment. NGAS recommends the use of AuSn for high power devices to provide a good
thermal path and a good RF path to ground. Maximum recommended temp during die attach is 320oC for 30
seconds.
Note: Many of the NGAS parts do incorporate airbridges, so caution should be used when determining the
pick up tool.
CAUTION: THE IMPROPER USE OF AuSn ATTACHMENT CAN CATASTROPHICALLY DAMAGE GaN
CHIPS.
Suggested Bonding Arrangement
RFOutput
Substrate
RFInput
Substrate
= 100 pF, 15V (Shunt)
= 10 Ohms, 30V (Series)
= 0.01uF, 15V (Shunt)
VG1VD1
VG1AVD1A
PLEASE ALSO REFER TO OUR “GaN Chip Handling Application Note” BEFORE HANDLING, ASSEMBLING OR BIASING THESE MMICS!
= 0.1uF, 15V (Shunt)
= 100 pF, 50V (Shunt)
= 0.01uF, 50V (Shunt)
= 0.1uF, 50V (Shunt) [4] [4]
[4]
RFINGND
GNDRFOUT
GND
GND
VG
1A
VD
1AG
ND
GN
DG
ND
VG
2A
VD
2AG
ND
VG
3A
VD
3A
GN
DG
ND
GN
D
VG
1
VD
1G
ND
GN
DG
ND
VG
2
VD
2G
ND
VG
3
VD
3
GN
DG
ND
GN
D
VD3
[4]
VG3[4]VD2
VG2
VD3A
[4]
VG3AVD2AVG2A
Approved for Public Release; NG19-0583