Photo-resist Stripper
Evan Chen
TAIWAX MAXWAVE Co., Ltd, No. 999, Bayiu 1st Rd., Guanyin Township, Taoyuan County Taiwan
2016
Outline
Introduction
• The Characteristic of Negative and Positive Photoresists
• Resist Types
Taimax’s Products
• Cross Reference List
• Benefit and Material Compatibility
• Performance
Mask/reticle
Exposure
After Development
Negative Photoresist
UV light
Positive Photoresist
Substrate
Substrate
Substrate
Photoresist
Substrate
Photoresist
The Characteristic of Negative and Positive Photoresists
The Characteristic of Negative and Positive Photoresists
Characteristic Positive Negative
Component
• Poly(methyl glutarimide) (PMGI) • Phenol formaldehyde resin (DNQ/Novolac) • SU-8 • Indene-Carboxylic-Acid (ICA)
Hydrophilic • Benzoin/Acrylic (PMMA) • Triazine/Novolac (3D X-link) • Thick film/copolymer with
polystyrene (PS) Hydrophobic • Rubber: Azide/Isoprene (X-
chain link)
Adhesion to Silicon Fair Excellent
Relative Cost More Expensive Less Expensive
Category
• Inorganic solvents: KOH based, NaOH based and etc • organic solvents: TMAH based, NMP based, DMSO based and etc
Resist Types
Targets: g-line(436nm for 0.5um technology)
i-line(365nm for 0.3um)
deep UV (248nm & 193nm for 0.25 & 0.18um)
Positive (hydrophilic) DNQ/Novolak(phenol-formaldehyde)
Negative Hydrophilic
• Benzoin/Acrylic (PMMA) (also dry-film)
• Triazine/Novolak (3D X-link)
• Thick Film – Copolymer with polystyrene (PS)
– 50-100 um thickness
– For solder bumping, metal lift-off, MEMS
Hydrophobic • Rubber: Azide/Isoprene (X-chain link)
Cross Reference List
Taimax’s product Photo-resist (PR) Note
PRS-991 LD-300D1 NMP based
PRS-219 Lift off -ENPI 202, ENPI 205 Aromatic Solvent + Alkyl Sulfonic Acid
PRS-809 Lift off -N-Nof(AZ), EPG-516 (P) NMP based
PRS-239 AZ-4620, TOK-HA 1300 Alkyl alcohol based High selectivity to Sn, Ag, Al, Cu and PI film
PRS-615 DNR-L300D1 (N) NMP based High selectivity to Ag, Al and Cu
PRS-240 AsahiCXA240, AsahiCX-A270, TOK50240, 50120, PW1000
Alkyl alcohol based High selectivity to Sn, Ag, Al, Cu and PI film
PRS-701 CR-4000, AZ-4620 DMSO-based
PRS-816 Eagle 2007 Lactic acid based
PRS-777 TOK-31 NMP based High selectivity to AlCu, Al and Cu
PRS-278 NP7-6000P, ENPI-202 and EP3200
DMSO-based High selectivity to GaAs, Al, ITO and Ti
• A single-dose
• Short processing times: 20-60 minutes
• Low etching rates on many sensitive metals such as Al, Ti, Ni, Au, Sn, Ag and TiW
• Suitable for use in immersion, batch spray, and single wafer tools
• Long bath life
• 316LEP Stainless Steel
• Quartz
• Propylene (P.P.)
Material Compatibility
Benefit
• Polytetrafluoroethyene (PTFE)
• Polyvinylidene fluoride (PVDF)
• High-density polyethylene (HDPE)
Benefit and Material Compatibility
Stripping Capability for Dry Film in Bumping Process
After stripping by PRS-240 (Dry film: AsahiCX-A270)
After a comprehensive identification by scanning electron microscope (SEM), the dry film is completely removed by the PRS-240.
Test condition is for 40 min at 70 ℃.
50X
1200X
50X
1200X
50X
1200X
50X
1200X
50X
1200X
Stripping Capability for Wet Film in Bumping Process
After stripping by PRS-239 (PR film: TOK HA-1300)
After a comprehensive identification by scanning electron microscope (SEM), the wet film is completely removed by the PRS-239.
Test condition is for 40 min at 60 ℃.
50X
1200X
50X
1200X
50X
1200X
50X
1200X
50X
1200X
Test condition is for 30 min at 60 ℃.
Stripping Capability for Wet Film in Bumping Process
After stripping by PRS-701 (PR film: CR-4000)
After a comprehensive identification by scanning electron microscope (SEM), the wet film is completely removed by the PRS-701.
250X
250X 3500X
3500X
Fig. 1. 50 wafers
Fig. 3. 1200 wafers
250X 3500X
Fig. 2. 500 wafers
Test condition is for 20 min at 55 ℃.
Stripping Capability for Wet Film in Semiconductor Industry
After stripping by PRS-777 (PR film: TOK-31)
15000X 15000X 15000X 15000X
15000X 15000X
Fig. 2. 50 wafers Fig. 3. 100 wafers Fig. 4. 300 wafers
Fig. 5. 500 wafers Fig. 6. 800 wafers
Fig. 1. FE-SEM photograph of after PR stripping
Fig. 7. 1000 wafers
15000X
Stripping Capability for Wet Film in LED Industry
Fig. 2 FE-SEM photographs of after PR stripping (Test condition is for 15min +15min at 85 ℃)
PR stripping by PRS-615 (PR film: TOK-31)
Fig. 1. Fig. 2 FE-SEM photographs of before PR stripping
350X 1000X 2000X
350X 1000X 2000X
If don’t see what you are looking for, Taimax can
custom-formulate something to meet your specific requirements.
Thank you.
TAIWAX MAXWAVE Co., Ltd, No. 999, Bayiu 1st Rd., Guanyin Township, Taoyuan County Taiwan 2016