Photo-resist Stripper

Evan Chen

TAIWAX MAXWAVE Co., Ltd, No. 999, Bayiu 1st Rd., Guanyin Township, Taoyuan County Taiwan

2016

Outline

Introduction

• The Characteristic of Negative and Positive Photoresists

• Resist Types

Taimax’s Products

• Cross Reference List

• Benefit and Material Compatibility

• Performance

Mask/reticle

Exposure

After Development

Negative Photoresist

UV light

Positive Photoresist

Substrate

Substrate

Substrate

Photoresist

Substrate

Photoresist

The Characteristic of Negative and Positive Photoresists

The Characteristic of Negative and Positive Photoresists

Characteristic Positive Negative

Component

• Poly(methyl glutarimide) (PMGI) • Phenol formaldehyde resin (DNQ/Novolac) • SU-8 • Indene-Carboxylic-Acid (ICA)

Hydrophilic • Benzoin/Acrylic (PMMA) • Triazine/Novolac (3D X-link) • Thick film/copolymer with

polystyrene (PS) Hydrophobic • Rubber: Azide/Isoprene (X-

chain link)

Adhesion to Silicon Fair Excellent

Relative Cost More Expensive Less Expensive

Category

• Inorganic solvents: KOH based, NaOH based and etc • organic solvents: TMAH based, NMP based, DMSO based and etc

Resist Types

Targets: g-line(436nm for 0.5um technology)

i-line(365nm for 0.3um)

deep UV (248nm & 193nm for 0.25 & 0.18um)

Positive (hydrophilic) DNQ/Novolak(phenol-formaldehyde)

Negative Hydrophilic

• Benzoin/Acrylic (PMMA) (also dry-film)

• Triazine/Novolak (3D X-link)

• Thick Film – Copolymer with polystyrene (PS)

– 50-100 um thickness

– For solder bumping, metal lift-off, MEMS

Hydrophobic • Rubber: Azide/Isoprene (X-chain link)

Cross Reference List

Taimax’s product Photo-resist (PR) Note

PRS-991 LD-300D1 NMP based

PRS-219 Lift off -ENPI 202, ENPI 205 Aromatic Solvent + Alkyl Sulfonic Acid

PRS-809 Lift off -N-Nof(AZ), EPG-516 (P) NMP based

PRS-239 AZ-4620, TOK-HA 1300 Alkyl alcohol based High selectivity to Sn, Ag, Al, Cu and PI film

PRS-615 DNR-L300D1 (N) NMP based High selectivity to Ag, Al and Cu

PRS-240 AsahiCXA240, AsahiCX-A270, TOK50240, 50120, PW1000

Alkyl alcohol based High selectivity to Sn, Ag, Al, Cu and PI film

PRS-701 CR-4000, AZ-4620 DMSO-based

PRS-816 Eagle 2007 Lactic acid based

PRS-777 TOK-31 NMP based High selectivity to AlCu, Al and Cu

PRS-278 NP7-6000P, ENPI-202 and EP3200

DMSO-based High selectivity to GaAs, Al, ITO and Ti

• A single-dose

• Short processing times: 20-60 minutes

• Low etching rates on many sensitive metals such as Al, Ti, Ni, Au, Sn, Ag and TiW

• Suitable for use in immersion, batch spray, and single wafer tools

• Long bath life

• 316LEP Stainless Steel

• Quartz

• Propylene (P.P.)

Material Compatibility

Benefit

• Polytetrafluoroethyene (PTFE)

• Polyvinylidene fluoride (PVDF)

• High-density polyethylene (HDPE)

Benefit and Material Compatibility

Stripping Capability for Dry Film in Bumping Process

After stripping by PRS-240 (Dry film: AsahiCX-A270)

After a comprehensive identification by scanning electron microscope (SEM), the dry film is completely removed by the PRS-240.

Test condition is for 40 min at 70 ℃.

50X

1200X

50X

1200X

50X

1200X

50X

1200X

50X

1200X

Stripping Capability for Wet Film in Bumping Process

After stripping by PRS-239 (PR film: TOK HA-1300)

After a comprehensive identification by scanning electron microscope (SEM), the wet film is completely removed by the PRS-239.

Test condition is for 40 min at 60 ℃.

50X

1200X

50X

1200X

50X

1200X

50X

1200X

50X

1200X

Test condition is for 30 min at 60 ℃.

Stripping Capability for Wet Film in Bumping Process

After stripping by PRS-701 (PR film: CR-4000)

After a comprehensive identification by scanning electron microscope (SEM), the wet film is completely removed by the PRS-701.

250X

250X 3500X

3500X

Fig. 1. 50 wafers

Fig. 3. 1200 wafers

250X 3500X

Fig. 2. 500 wafers

Test condition is for 20 min at 55 ℃.

Stripping Capability for Wet Film in Semiconductor Industry

After stripping by PRS-777 (PR film: TOK-31)

15000X 15000X 15000X 15000X

15000X 15000X

Fig. 2. 50 wafers Fig. 3. 100 wafers Fig. 4. 300 wafers

Fig. 5. 500 wafers Fig. 6. 800 wafers

Fig. 1. FE-SEM photograph of after PR stripping

Fig. 7. 1000 wafers

15000X

Stripping Capability for Wet Film in LED Industry

Fig. 2 FE-SEM photographs of after PR stripping (Test condition is for 15min +15min at 85 ℃)

PR stripping by PRS-615 (PR film: TOK-31)

Fig. 1. Fig. 2 FE-SEM photographs of before PR stripping

350X 1000X 2000X

350X 1000X 2000X

If don’t see what you are looking for, Taimax can

custom-formulate something to meet your specific requirements.

Thank you.

TAIWAX MAXWAVE Co., Ltd, No. 999, Bayiu 1st Rd., Guanyin Township, Taoyuan County Taiwan 2016