New Product Introduction (NPI) DirectFET™ ‒ New Corner Gate StrongIRFET™
Kevin Ream, DCDC PMDJuly 2015
Copyright © Infineon Technologies AG 2014. All rights reserved.
New Corner Gate DirectFET™
Great new design for even lower Package Resistance
Unmatched device current rating >150 A in Medium Can
Significantly larger source solder area than existing Medium Can DirectFET™ footprints
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10 February 2015
MN Footprint ME Footprint
RTHJ-PCB = ~ 1.0 ⁰ C/W RTHJ-PCB = 0.75 ⁰C/W
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Copyright © Infineon Technologies AG 2014. All rights reserved.
ME-Type DirectFET ™ vs PQFN
ME-Type DirectFET™ has four times larger source contact area than a typical 5x6 PQFN package
Much higher current density and higher reliability
Ideal for high performance Power tools and RoHS 6 compliant equipment
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10 February 2015
ME DirectFET ™ :
3.7mm2 source contact area:
5x6 PQFN:
< 1mm2 source contact area
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Copyright © Infineon Technologies AG 2015. All rights reserved.
New Corner Gate Pad for Scalable Designs
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May 2015
Single pad layout accommodates multiple footprints
Optimized RDS(on) for lowest possible losses
IRF7483TRPBF~60% Die Size
Fits on same footprint
IRF7480TRPBF100% Die Size
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Copyright © Infineon Technologies AG 2014. All rights reserved.
DirectFET™ Portfolio – Medium Can, Corner Gate
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10 February 2015
ME MF
Part Number Package OutlineVDS
(V)
RDS(on) (mΩ)
Typ/Max@ 10 V
ID(A)
QG (nC)
IRF7480MTRPBF Medium Can DirectFET™ ME 40 0.9 / 1.2 217 123
IRF7483MTRPBF Medium Can DirectFET™ MF 40 1.7 / 2.3 135 81
IRF60DM206 Medium Can DirectFET™ ME 60 2.2 / 2.9 130 133
IRF7580MTRPBF Medium Can DirectFET™ ME 60 2.9 / 3.6 114 120
IRF7780MTRPBF Medium Can DirectFET™ ME 75 4.5 / 5.7 89 124
Part Numbers, Pricing and Documentation Links
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2013-09-25
Copyright © Infineon Technologi
es AG 2013. All
rights reserved.
Part Numbers Samples Available Production Package Registerable(Y/N) MOQStarting MSRP
$ per pieceRoHS (Y/N)
IRF7480MTRPBF now now DirectFET™ ME Y 4800 Y
IRF7483MTRPBF now now DirectFET™ MF Y 4800 0.45 in qty of 10K Y
IRF60DM206 now now DirectFET™ ME Y 4800 Y
IRF7580MTRPBF now now DirectFET™ ME Y 4800 Y
IRF7780MTRPBF now now DirectFET™ ME Y 4800 Y
Copyright © Infineon Technologies AG 2015. All rights reserved.
StrongIRFET™ Corner Gate DirectFET™
http://www.infineon.com/strongirfet
For more information, please visit the product pages on the Infineon website.
Support
Page 7
May 2015
Copyright © Infineon Technologies AG 2015. All rights reserved.
Summary
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May 2015
Key Features and Benefits:― Ultra-low RDS(on)
― High current rating
― Rugged silicon
― Improved gate, avalanche and dynamic dv/dt ruggedness
― Lower thermal resistance to PCB
― High current density
― Scalability of designs
― RoHS 6 compliant
Target Applications: