High Performance Thin-film Transistor (TFT) withAmorphous InGaZnO 4 Semiconductor
1. Thin-film Transistor (TFT)Switching device & Driving device in display such a s LCD, OLED, Flexible Electronics
2. High Performance of InGaZnO 4 TFTHigh electron mobilityRoom temperature & large area deposition
Prof. Hideo HOSONO (Tokyo Institute of Technology)
Gate line
Data line
Storagecapacitor
ITO
substrate
gate
a-IGZO
gate insulator
glass
a-IGZO TFT with novel structure
a-IGZO bottom-gate coplanar-type TFT
environmental stability coplanar homojunction
PECVD SiNx:Hbarrier layer
conductive a-IGZO3.3 x 10 -3 ΩΩΩΩcm
source drainprotection channel
metal line
H HH H HH
0 10 200.0
1.0x10-4
2.0x10-4
3.0x10-4
4.0x10-4
5.0x10-4
Dra
in C
urre
nt (A
)
Drain Voltage (V)
a-IGZO TFTs in 1cm2
a-IGZO coplanar homojunction TFT
VON - 1.86 V
VTH - 0.96 V
µsat 9.8 cm2/Vs
S 0.15 V/dec
W/L= 60 / 8 µµµµmVD = 12 V
on-channel series resistanceRsW = 220 (Ωcm)
12 TFTs 12 TFTs
Rs=∆∆∆∆ID/∆∆∆∆VD
@VGS=20VVD=0V
Gate
gate insulator
IDRS/DRCH
RS/D
RC RC
metal
gate
RsW = RCH+2(RS/D+RC)
-20 -10 0 10 2010-14
10-12
10-10
10-8
10-6
10-4
Dra
in C
urre
nt (A
)
Gate Voltage (V)
20V
15V
10V
5V
AMOLED Backplane Candidates
a-Si:H µµµµc-Si:H(PECVD)
micro-Si a-IGZO LTPS
μμμμ (cm2/Vs)0.5~1 (BG)
0.5~1 (BG)5~30 (TG)
310
5~2030~300
Stability （（（（ΔΔΔΔVTH））））
Large>>10V
=<a-Si:H>LTPS
1.8 V>=LTPS
<a-Si:H1~10V
Small~1V
uniformity Good?
No dataGood Good
(short-range)Poor
(short-range)
TFT structure
staggered staggered staggered coplanarstaggered
coplanar
TFT & Cssize
Large LargeMiddle
Middle SmallMiddle
Small
Pixel circuit design
LargeLargeMiddle
MiddleSmall
(Simple)Small
FPD application（（（（TFT on glass ））））
3. InGaZnO4 TFT ApplicationFlexible electronics application （（（（TFT on polymer film ））））
I DS
(A)
V GS (V)-2 0 2 4 6
10-9
10-7
10-5
10-11
W/L=100/10 µm
VDS = +5 V
Polymer
ITOY2O3
a-InGaZnO 4
Au/Ti
Glass & Polymer film available as substrateHigh optical transparent semiconductor
High Quality IGZO Sputtering Target
Contact : Fujibayashi, Tel +81-(0)3-5573-6571, Nippon Mining & Metals Co., LTD
High Density＞＞＞＞ 95％％％％
For less nodules or particles
DC SputteringLow Bulk-Resistivity
10 –2 ΩΩΩΩcm or less
Large size＞＞＞＞ 150 mm××××1200 mm
For high productivity
Stable SputteringUniform Microstructure
IGZO sputtering target supplier
4. Patent status & Patent owner contactAvailable for licensing
Patent No. : WO2003/040441, WO2005/088727Apply country : JP,US,EP,KR,CN,TW
Patent owner contact: Masaru OZAKI (JST)Phone:+81-3-5214-8486, e-mail: [email protected]
Contact: Sho YOSHIDA , Phone:+81-3-5299-5294, [email protected] , JX Nippon Mining & Metals Corp.
Toppan
SID 2010, FPD Internatioal 2011
SID2010,CES2012
FPD Internatioal2010 , CES2012
6.4” AM-LCD
55”AM-OLED(Pixels1920x1080)
LG
32”AM-LCD(Pixels 1366x768)
33”AM-OLED(Pixels1920x1080)
AUO
11.7”AM-OLED(Pixels 960x540)
Sony
19”AM-OLED(Pixels 960x540)
Samsung Mobile Display
70”AM-LCD
55”AM-OLED (Pixels1920x1080)
SamsungElectronics
FPD Internatioal2009
4”AM-EPaper
1T1C on plastic
M. Ito et al., IEICE Trans. E. E90-CSID 2010
Toppan
SID 2010, FPD Internatioal 2011
SID2010,CES2012
FPD Internatioal2010 , CES2012
6.4” AM-LCD
55”AM-OLED(Pixels1920x1080)
LG
32”AM-LCD(Pixels 1366x768)
33”AM-OLED(Pixels1920x1080)
AUO
11.7”AM-OLED(Pixels 960x540)
Sony
19”AM-OLED(Pixels 960x540)
Samsung Mobile Display
70”AM-LCD
55”AM-OLED (Pixels1920x1080)
SamsungElectronics
FPD Internatioal2009
4”AM-EPaper
1T1C on plastic
M. Ito et al., IEICE Trans. E. E90-CSID 2010
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