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B y
Yo g i n i G D h o p a d e
U n d e r t h e g u i d a n c e o f
D r. P a w a n K a h o l
D r. K a r t h i k G h o s h
D r. R a m G u p t a
D r. M a n i v a n n a n
Composite dielectric material forNon-Volatile Memory applications
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What is a capacitor?
A capacitor is an electrical or electronic devicethat stores energy in the electrical field betweentwo conducting plates.
ConductorsInsulator (Dielectric)
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Capacitance
The measure of amount of the electric charge storedfor a given electric potential. It is measured as:
C=Q/V
C=r A/d r is the characteristic of the particular dielectric
medium used.
The energy stored in a capacitor is given as E=VQ/2
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Dielectric constant and Dielectric Material
Dielectric constant is the ratio of the permittivityof a substance to the permittivity of the freespace
The capacitance created by the material isdirectly related to the dielectric constant of thematerial.
A dielectric material is an insulator
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Loss Tangent or the Dielectric Loss
The ratio of the power loss in a dielectric materialto the total power transmitted through thedielectric, the imperfection of the dielectric.
Equal to the tangent of the loss angle
V=V0 exp (jt) =2f Q=C0V
IC=dQ/dt=jC0 V C=(/ 0 ) C0 = r C0
Q= r C0 V
IC =j r C0 V
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No dielectric material is a perfect insulator, so that
in addition to IC Which leads V by 900, There is a
loss current Ilin phase with V and the
magnitude
Il
=GV
Total current through the capacitor is
I= IC + Il
=(j+G)V
The current I leads the voltage by V by a phase angle
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Cos = Il /I
The behavior may be considered in terms of the loss angle
=(900 - ) Tan = Il / Ic
= G/C
Tan * = l -i ll
* r = lr -i
llr
The loss Tangent Tan = ll / l
The Power loss = f V2 l Tan
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List of the dielectric constants of the material
List of the material Dielectric constant
Vacuum 1.0
Glass 5-10
Strontium Titanate (STO) 310.00
Titanium Dioxide (TiO2 ) 173
Water 80.4
Air 1.00059
Silicon 12
Silicon dioxide (Si02 ) 4.5
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What are we looking at?
The aim here is to look for a material thatshows high dielectric constant and low
leakage current.
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Why are we looking at this property?
The advantage of having a high dielectric constantis to allow the miniaturization of microelectronic
components.
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Disadvantage
In the process of increasing the dielectricconstant the leakage current due to
tunneling is increased that leads to hugepower consumption in turn reducing the
reliability of the device
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Background studies
Electrodes: Cu, Ni, Ag, Au, Al, Pt are few that are used as electrodes.
Substrates: Glass, Sapphire, Tin, Silicon , GaAs,LAO
Dielectric materials:
Barium Strontium Titanate (BST), Hafnium Oxide (HfO) ,Barium Hafnium Oxide (BHfO), Strontium Titanate
(STO)
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Properties of STO
Strontium Titanate more often called as STO isan oxide of Strontium and Titanium having thechemical formula SrTiO3.
STO is resistant to most solventsThe density is 5.13 g/cm3
The melting point of STO is 2080 C
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Mechanical properties
The crystal structure of STO is pervoskite.
Sr+2
O -2
Ti4
+
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Other Properties
STOs can be doped with rare earth ortransition metals.
The dielectric constant of STO is 310
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Device Structure
Pt STOElectrodes Si Substrate
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Optimization of the STO film for Crystal Structure
The film has to be crystalline to obtain good dielectricproperties.
In order to show the crystalline behavior of STO thefollowing parameters have to be considered:
Substrate
Thickness of the film
Temperature
PressureHeat Treatment
Electrodes
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XRD-X Ray Diffraction
XRD was done to Optimize the crystal structure anddepending on these results the appropriate substrate
and thickness of the sample was changed. TheTemperature of growth and the Heat- treatment was
also changed depending on the crystal structureobtained.
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XRD of ideal STO(STO powder on Glass)
20 30 40 50 60 70 80
0
50
100
150
200
250
300
(310)
(220)(2
11)(2
00)
(111)
(110)
(100)
STO Powder
2 Theta
L
in(Counts)
0
50
100
150
200
250
300
L
in(Counts)
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Substrates
Glass
Quartz
Lanthanum Aluminate
Silicon
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XRD of STO on all the substrates
20 30 40 50 60 70 80
0
10
20
30
40
50
60
70 STO film on Glass
2 Theta
Lin(Counts)
0
10
20
30
40
50
60
70
L
in(Counts)
20 30 40 50 60 70 80
0
10
20
30
40
50
60
70
STO film on Quartz
2 Theta
Lin(Counts)
0
10
20
30
40
50
60
70
Lin(Counts)
20 30 40 50 60 70 80
0
20000
40000
60000
80000
100000
120000
140000
160000
180000
200000
LAO substrate-High Phi
2 Theta
Lin(Counts)
0
20000
40000
60000
80000
100000
120000
140000
160000
180000
200000
Lin(Counts)
20 30 40 50 60 70 80
0
10
20
30
40
50
60
70
LAO Substrate-Low Phi
2 Theta
Lin(Coun
ts)
0
10
20
30
40
50
60
70
Lin(Coun
ts)
20 30 40 50 60 70 800
20000
40000
60000
80000
100000
120000
140000
160000
180000
STO on Si
2 Theta
Lin(Counts)
0
20000
40000
60000
80000
100000
120000
140000
160000
180000
Lin(Counts)
20 30 40 50 60 70 80
0
20
40
60
80
100
STO on Si
2 Theta
Lin(Counts)
0
20
40
60
80
100
Lin(Counts)
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Thickness of the film and temperature andannealing for 1 hr at 650 (C)
20 30 40 50 60 70 80
0
10
20
30
40
50
60
70STO on Glass-20K shots-600
0
C
2 Theta
Lin(Counts)
0
10
20
30
40
50
60
70
Lin(Counts)
20 30 40 50 60 70 80
0
10
20
30
40
50
60
Lin(Counts)
STO on Quartz-20k Shots-6000C
2 Theta
Lin(Counts)
0
10
20
30
40
50
60
20 30 40 50 60 70 80
0
200
400
600
800
1000
STO on LAO(L)Post annealing 650 0C for 1 hr
2 Theta
Lin(Counts)
0
200
400
600
800
1000
Lin(Counts)
20 30 40 50 60 70 80
0
50
100
150
200
250
300
350
400
450
STO on Si(L)Post annealed 6500C for 1 hr
2 Theta
Lin(Counts)
0
50
100
150
200
250
300
350
400
450
Lin(Cou
nts)
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STO on Si (20,000) 300(c) O- 10^-3mbar
20 30 40 50 60 70 80
0
20
40
60
80
100
STO on Si(L)-3000C-20K shots under Oxygen 10
-3MBar
2 Theta
L
in
(Counts)
0
20
40
60
80
100
L
in
(Counts)
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STO on Si (20,000) at 600(c) and annealed underOxygen for 3 min (10^-2 mbar)
20 30 40 50 60 70 80
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
STO on Si(L) at 6000C and annealed for 3 min in 0
2(10
-2MBar)
X Axis Title
Lin(Counts)
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
Lin(Counts)
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STO on Si (20,000) at 600(c) and annealed underOxygen for 3 min (100 mbar)
20 30 40 50 60 70 80
0
5
10
15
20
25
30
35
40
45
50
STO o n Si(L) at 6000C and a nnealed for 3 min under O
2(100 MBar)
2 Theta
L
in(Counts)
0
5
10
15
20
25
30
35
40
45
50
L
in(Counts)
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STO on Si (30,000) at 600(c) and annealed underOxygen for 3 min (10^-2 mbar)
20 30 40 50 60 70 80
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30STO in Si-30000 Shots-Annealed
X Axis Title
Lin(Counts)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
Lin(Counts)
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Si-STO-Au
20 30 40 50 60 70 80
0
10
20
30
40
50
60
70
80Si-STO-Au(Low Phi)
2 Theta
Lin(Counts)
0
10
20
30
40
50
60
70
80
Lin(Counts)
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Pt on Si (12,000) at 300(c)
20 30 40 50 60 70 80
0
20000
40000
60000
80000
100000
120000
140000
160000
180000
Pt on Si 3000c (12,000 shots)
2 Theta
Lin(Counts)
0
20000
40000
60000
80000
100000
120000
140000
160000
180000
Lin(Counts)
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Si-Pt-STO
20 30 40 50 60 70 80
0
50
100
150
200
250
300
350
Si-Pt-STO
2 Theta
Lin(Counts)
0
50
100
150
200
250
300
350
Lin(Counts)
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C-V measurement and calibration techniques
HC HP Lp LC
STO
pt
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C-f for thin film and palette
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D-f for Thin film and palette
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Z-f for thin film and pallete
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C-V for thin films and pallets
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D-V for thin film and palette
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Z-V for thin film and pallet
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Studying the properties of SiO2 Pallet
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C-f for composite material
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D-f
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C-V
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D-V
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Z-V
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I-V for thin films
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I-V for the pallets
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Future Work
Analysis of the Frequency dependence behavior usingCole-Cole plot
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Applications
Nonvolatile memory
Sensors
Power conditioningFilters
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THANK YOU