Comp Dielectric Material[1][1]

8/9/2019 Comp Dielectric Material[1][1]

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B y

Yo g i n i G D h o p a d e

U n d e r t h e g u i d a n c e o f

D r. P a w a n K a h o l

D r. K a r t h i k G h o s h

D r. R a m G u p t a

D r. M a n i v a n n a n

Composite dielectric material forNon-Volatile Memory applications


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What is a capacitor?

A capacitor is an electrical or electronic devicethat stores energy in the electrical field betweentwo conducting plates.

ConductorsInsulator (Dielectric)


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Capacitance

The measure of amount of the electric charge storedfor a given electric potential. It is measured as:

C=Q/V

C=r A/d r is the characteristic of the particular dielectric

medium used.

The energy stored in a capacitor is given as E=VQ/2


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Dielectric constant and Dielectric Material

Dielectric constant is the ratio of the permittivityof a substance to the permittivity of the freespace

The capacitance created by the material isdirectly related to the dielectric constant of thematerial.

A dielectric material is an insulator


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Loss Tangent or the Dielectric Loss

The ratio of the power loss in a dielectric materialto the total power transmitted through thedielectric, the imperfection of the dielectric.

Equal to the tangent of the loss angle

V=V0 exp (jt) =2f Q=C0V

IC=dQ/dt=jC0 V C=(/ 0 ) C0 = r C0

Q= r C0 V

IC =j r C0 V


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No dielectric material is a perfect insulator, so that

in addition to IC Which leads V by 900, There is a

loss current Ilin phase with V and the

magnitude

Il

=GV

Total current through the capacitor is

I= IC + Il

=(j+G)V

The current I leads the voltage by V by a phase angle


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Cos = Il /I

The behavior may be considered in terms of the loss angle

=(900 - ) Tan = Il / Ic

= G/C

Tan * = l -i ll

* r = lr -i

llr

The loss Tangent Tan = ll / l

The Power loss = f V2 l Tan


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List of the dielectric constants of the material

List of the material Dielectric constant

Vacuum 1.0

Glass 5-10

Strontium Titanate (STO) 310.00

Titanium Dioxide (TiO2 ) 173

Water 80.4

Air 1.00059

Silicon 12

Silicon dioxide (Si02 ) 4.5


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What are we looking at?

The aim here is to look for a material thatshows high dielectric constant and low

leakage current.


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Why are we looking at this property?

The advantage of having a high dielectric constantis to allow the miniaturization of microelectronic

components.


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Disadvantage

In the process of increasing the dielectricconstant the leakage current due to

tunneling is increased that leads to hugepower consumption in turn reducing the

reliability of the device


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Background studies

Electrodes: Cu, Ni, Ag, Au, Al, Pt are few that are used as electrodes.

Substrates: Glass, Sapphire, Tin, Silicon , GaAs,LAO

Dielectric materials:

Barium Strontium Titanate (BST), Hafnium Oxide (HfO) ,Barium Hafnium Oxide (BHfO), Strontium Titanate

(STO)


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Properties of STO

Strontium Titanate more often called as STO isan oxide of Strontium and Titanium having thechemical formula SrTiO3.

STO is resistant to most solventsThe density is 5.13 g/cm3

The melting point of STO is 2080 C


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Mechanical properties

The crystal structure of STO is pervoskite.

Sr+2

O -2

Ti4

+


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Other Properties

STOs can be doped with rare earth ortransition metals.

The dielectric constant of STO is 310


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Device Structure

Pt STOElectrodes Si Substrate


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Optimization of the STO film for Crystal Structure

The film has to be crystalline to obtain good dielectricproperties.

In order to show the crystalline behavior of STO thefollowing parameters have to be considered:

Substrate

Thickness of the film

Temperature

PressureHeat Treatment

Electrodes


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XRD-X Ray Diffraction

XRD was done to Optimize the crystal structure anddepending on these results the appropriate substrate

and thickness of the sample was changed. TheTemperature of growth and the Heat- treatment was

also changed depending on the crystal structureobtained.


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XRD of ideal STO(STO powder on Glass)

20 30 40 50 60 70 80

0

50

100

150

200

250

300

(310)

(220)(2

11)(2

00)

(111)

(110)

(100)

STO Powder

2 Theta

L

in(Counts)

0

50

100

150

200

250

300

L

in(Counts)


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Substrates

Glass

Quartz

Lanthanum Aluminate

Silicon


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XRD of STO on all the substrates

20 30 40 50 60 70 80

0

10

20

30

40

50

60

70 STO film on Glass

2 Theta

Lin(Counts)

0

10

20

30

40

50

60

70

L

in(Counts)

20 30 40 50 60 70 80

0

10

20

30

40

50

60

70

STO film on Quartz

2 Theta

Lin(Counts)

0

10

20

30

40

50

60

70

Lin(Counts)

20 30 40 50 60 70 80

0

20000

40000

60000

80000

100000

120000

140000

160000

180000

200000

LAO substrate-High Phi

2 Theta

Lin(Counts)

0

20000

40000

60000

80000

100000

120000

140000

160000

180000

200000

Lin(Counts)

20 30 40 50 60 70 80

0

10

20

30

40

50

60

70

LAO Substrate-Low Phi

2 Theta

Lin(Coun

ts)

0

10

20

30

40

50

60

70

Lin(Coun

ts)

20 30 40 50 60 70 800

20000

40000

60000

80000

100000

120000

140000

160000

180000

STO on Si

2 Theta

Lin(Counts)

0

20000

40000

60000

80000

100000

120000

140000

160000

180000

Lin(Counts)

20 30 40 50 60 70 80

0

20

40

60

80

100

STO on Si

2 Theta

Lin(Counts)

0

20

40

60

80

100

Lin(Counts)


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Thickness of the film and temperature andannealing for 1 hr at 650 (C)

20 30 40 50 60 70 80

0

10

20

30

40

50

60

70STO on Glass-20K shots-600

0

C

2 Theta

Lin(Counts)

0

10

20

30

40

50

60

70

Lin(Counts)

20 30 40 50 60 70 80

0

10

20

30

40

50

60

Lin(Counts)

STO on Quartz-20k Shots-6000C

2 Theta

Lin(Counts)

0

10

20

30

40

50

60

20 30 40 50 60 70 80

0

200

400

600

800

1000

STO on LAO(L)Post annealing 650 0C for 1 hr

2 Theta

Lin(Counts)

0

200

400

600

800

1000

Lin(Counts)

20 30 40 50 60 70 80

0

50

100

150

200

250

300

350

400

450

STO on Si(L)Post annealed 6500C for 1 hr

2 Theta

Lin(Counts)

0

50

100

150

200

250

300

350

400

450

Lin(Cou

nts)


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STO on Si (20,000) 300(c) O- 10^-3mbar

20 30 40 50 60 70 80

0

20

40

60

80

100

STO on Si(L)-3000C-20K shots under Oxygen 10

-3MBar

2 Theta

L

in

(Counts)

0

20

40

60

80

100

L

in

(Counts)


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STO on Si (20,000) at 600(c) and annealed underOxygen for 3 min (10^-2 mbar)

20 30 40 50 60 70 80

0

5

10

15

20

25

30

35

40

45

50

55

60

65

70

75

80

85

90

STO on Si(L) at 6000C and annealed for 3 min in 0

2(10

-2MBar)

X Axis Title

Lin(Counts)

0

5

10

15

20

25

30

35

40

45

50

55

60

65

70

75

80

85

90

Lin(Counts)


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STO on Si (20,000) at 600(c) and annealed underOxygen for 3 min (100 mbar)

20 30 40 50 60 70 80

0

5

10

15

20

25

30

35

40

45

50

STO o n Si(L) at 6000C and a nnealed for 3 min under O

2(100 MBar)

2 Theta

L

in(Counts)

0

5

10

15

20

25

30

35

40

45

50

L

in(Counts)


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STO on Si (30,000) at 600(c) and annealed underOxygen for 3 min (10^-2 mbar)

20 30 40 50 60 70 80

0

2

4

6

8

10

12

14

16

18

20

22

24

26

28

30STO in Si-30000 Shots-Annealed

X Axis Title

Lin(Counts)

0

2

4

6

8

10

12

14

16

18

20

22

24

26

28

30

Lin(Counts)


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Si-STO-Au

20 30 40 50 60 70 80

0

10

20

30

40

50

60

70

80Si-STO-Au(Low Phi)

2 Theta

Lin(Counts)

0

10

20

30

40

50

60

70

80

Lin(Counts)


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Pt on Si (12,000) at 300(c)

20 30 40 50 60 70 80

0

20000

40000

60000

80000

100000

120000

140000

160000

180000

Pt on Si 3000c (12,000 shots)

2 Theta

Lin(Counts)

0

20000

40000

60000

80000

100000

120000

140000

160000

180000

Lin(Counts)


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Si-Pt-STO

20 30 40 50 60 70 80

0

50

100

150

200

250

300

350

Si-Pt-STO

2 Theta

Lin(Counts)

0

50

100

150

200

250

300

350

Lin(Counts)


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C-V measurement and calibration techniques

HC HP Lp LC

STO

pt


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C-f for thin film and palette


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D-f for Thin film and palette


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Z-f for thin film and pallete


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C-V for thin films and pallets


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D-V for thin film and palette


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Z-V for thin film and pallet


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Studying the properties of SiO2 Pallet


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C-f for composite material


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D-f


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C-V


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D-V


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Z-V


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I-V for thin films


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I-V for the pallets


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Future Work

Analysis of the Frequency dependence behavior usingCole-Cole plot


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Applications

Nonvolatile memory

Sensors

Power conditioningFilters


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THANK YOU

Documents

Comp Dielectric Material[1][1]