Transcript
Page 1: A 10 W Power Amplifier for the 13cm Band using GaAs Technology Archive/A_10_W... · 2016. 1. 20. · (40 dBm output power 1 10 an1 37%). there is a lower power advantage in favour

VHF COMMUNICATIONS 4/95

Harald Fleckner, De8UG

A 10 Watt Power Amplifier forthe 13cm Band using GaAsTechnology

Developed with the help of PUFFCAD Software

1.CHOICE OFSEMICONDUCTOR

The transistor s used in the amplifier arcMitsubishi GaAsrETs from the 0900range. The 0905 type is used in thedriver stage. with two type 0906's inthe parallel high-level stage .

The following performance data werethe targets aimed for in the develop­ment work:

The two-stage power amplifier intro­duced in issue 3/1994 [11 of VHFCommunications supplies an outputpower of S Watts in the l3em hand inlinear operation (class A) with 23 dBampuncauon.

The aruclc below introduces a newamplifier in this development range,which yields an oulput power of 10Walls with a linear amplification of20 dR.

The circuit and layout have onceagain been set up using purr CADsoftware [4J. on the basis of theresults from the development workon the 5 wen.amputter. As 8 resultof this. a parallel circuit with two 5Waft stages has been inserted in thehigh-level stage of this amplifier unit.

Amplification:Output power:

Band width.Zin = Zout:

>20dBatK >1Min. 10 W at max,1 dB compression100 MHz= 50n withreturn loss> = 20 dB

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VHF COMMUNICATIONS4/95(~--- - - ---------""-"-"""""'""""""""""""'"

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Arguments in favour of using a para llelhigh-level stage consisting of two5 Watt transistor; (as opposed to :I

singfc stage with a 10 Wall transistor)arc the higher efficiency and the higher(in total ) power loss of the para llel­switc hed high-level stage transistorsand the, at presen t. rather more favour­able cost/performance rat io of the 0906GaAsmT. as against the 10 Wall 0907type.

According to the Mitsubishi data sheet,in the given frequency range the 0906attains an output power of 5.0 Watts =37 dBm at Uds = 10 V, Ids = 1.1 A,with an amplification of 11 dB at 40%efficiency .

In comparison with the {)l}(17 type(40 dBm output power 1 10 an 1 37%).there is a lower power adva ntage infavour of the two parallel-Wired ()l)()6stages .

The 0905 type com fortably supp lies thenecessary drive power of app . I Wallfor the para llel stage with an ampli fica­tion of approximately 10 dB. lts typicalpower is given by Mitsuhishi as app.34 dBm = 2.5 Walt s at 8 V 10.8 A,

The S-parameters for the selec ted tran­sistors required for the circuit develop­ment are taken from the Mitsuhishi da tahank and are valid for the DC voltageconditions referred to above.

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frequency. the ga in slope obtained(S.2 I) clearly shows the influence of tile710 1./4 coupler between the twohigh-level transistors. This type of cou­piing pre -supposes a transforma tion ofall individua l stages with a son impcd­anrc, and is well known from aerialengineering. It is relatively loss-freeand is parti cularly effective when eachindividual stage is transformed heforethe hook-up on the calculator to Zin =Zout = 500:. The better this transfo rma­tion is carried out, the "smoother" thegain slope actually obtained is, plottedagainst the frequency.

The calc ulated input impedance (S I t)is more strongly depe ndent on thefrequency than the output impedance(S::!:2). and here the typica l broad­bandcdn css of parall el stages shows toadvantage. The val ues shown in l-ig. Igive the following performance valuesfor the simulated circuit at all operatingfrequency of 2.320 MIll'.:

VHF COMMU NICATIONS 4/95

In operation. there is a OC input powerexceedi ng 30 Watts. so the heat sinkmust have IH.·nc·rous d imensions. inorder to guarantee that the maximumpermissible temperature for the transis­tors. of 175" is never reached.

2.SIM ULATION ANDA:-;ALYSIS OF AMPLIFIERCIRCUIT USING CADSOFT WARE

The functio ning of the Puff Cl\Dsoftware is comprehensively descri bedin [21 13J f41 . so only the resultsobtained are presented and ana lysedhere . Fig. I shows the screen print -ourfrom Pu ff with the draft layout of thecirc uit, the associated Smith diagram,the parts list and the scatter parametercurve over the selected frequency range(1.5 - 3.0 Gllz).

From the calculated scatter parameters,the stability factor. K. of the amplifiercircuit can be subsequently determinedfor the operating frequency (2.3216GHz) [51. When plotted aga inst the

Return loss input:Return loss output :Ampl ification:Feedback:K factor at 2.320 MHz:Power band width (-3 db).

· 26.7 dB- 33.2 dB+ 20.7 dB· 38.3 an294 400 Mllz+ 100 ~Hz

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Page 5: A 10 W Power Amplifier for the 13cm Band using GaAs Technology Archive/A_10_W... · 2016. 1. 20. · (40 dBm output power 1 10 an1 37%). there is a lower power advantage in favour

VHF COMMUN ICATIONS 4/95

ClC2C3C4C5C6C7C8C9C IO11J2L1L2L3L4L5L6rr'1'2T3ZSZ lZ2Z3

"AZ5Z6ZT I -7,T4

TrimmerTrimmerTri mmerTri mmerTrimmerTrimmerCapacitorCapacitorCapacitorCapacitorSocketSocketInductorInductorInduct orInductorInductorInductorFETFETFETInductorInductorInductorInduct orInductorInductorInductorInductor

2.5pF2.5pF2.5pF2.5pF2.5pF2.5pF4.7pF4.7pF4.7pF4.7pFN-type or SMAN-type or SMAIO0(24mm Stripline65/23mm Siriplincl OO/24mm Stripline65(23mm Stripline100124mm Strlpline65123mm Stripline09050906090622/23mm Striplinc15/14mm Striplinc19/15mm Striplinc171l5 mm Stripline21116mm Striplinc17/15mm Striplinc2I /16mm Strip line71/24mm Srripline

Teflon/CeramicTeflon/CeramicTeflon/CeramicTeflon/CeramicTefl on/CeramicTeflon/CeramicATC-Chip 100ATC-Chip 100ATC-Chip 100ATC-Chip 100

Mits ubishiMitsubishiMitsubishi

FigA: Paris List for the l Scm lOW PA

f ig.2 shows the layout gene rated by theCI\D software as a laser print-out. forTeflon-based materia l with a substratethickness of 0.79 r um..

The earth paths on the longitudi nal andtransvers e sides of the boards arcsurfaces which arc added later andwhich are through-hole plated to theunderside of the boards.

Tn the part s list in Fig .L we can also

recognise the necessary discrete compo ­nents of the circ uit. under the descrip­tion "lumped", lIere we arc dea lingwith capacito rs and resi stances whichare necessary for the circuit to operate.

Fig.3 shows the wiring diagram for the10 Watt paralle l high-level stage . Fig.4shows all components required in thepart s list

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VHFCOMMUNICATIONS 4195(~. - - - - - - - --- -"-"--"""== ===-

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F ig.5a : Side View of a fin ished unit Fig.5b: Component Layout

Veckel ;: Cover ; Gehause ;: Cover; RippenkatkiJrpu ;: Finn ed Cooling Rody;Mit de' Plat;" e & Folie VerliJtet ;: Soldered to Board and Foil;Weiflblechgehli" ,tt ;: Ti np late Housing; Kupfufolie e Copper Fo il;NUl ;: groove; Ma.ue,,;," ;: Solid Rivels; KlJhlklirper ::;. Cool i~ 8 ody;H ohl"iete, durchkonta1ctierf ::: Hollow rivet. through-hole pbttcd;Ntll1tilplotine. senkredu e;"gebauJ ;: PSU board, vertically Insert ed

222

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VHF COMMUNICATIONS 4/95

3.AMPLIFIER ASSDlIlLY

The ampl ifier circuit is assembled on aTe no n board (er = 2.33) with "thed imen sions 146 mm. x 72 mm. x 0.79mm.. For its part , it is screwed to ana lum inium finn ed cooling. body withdim en sion s of 147 mm. x 100 rnm. x40 mm.• which acts as a fasten ing. and aheat sink for the power transistors andvoltage regulator (H g.Sa).

The lX: voltage supply is mounted on adouble-coated epox y board. measuring105 rnm. x 20 mrn. x 1.6 0101 .,internally soldered vert ically to thelon gi tudina l side of th e hou sing(Hg.Sb). Its circui t and structure corrc ­spond to the publications as pl'r (6) or[I] .

Fig..6 shows the wiring d iagram. Fig.7the components diagram. and Fig.S theparts list for this power supply. Th ecomponents are a ll mounted on the foilside. so that the earth surfaces have tobe throug h-bole plated.

Grooves are mi lled in the cooling body,so that the drain and gale connectionsof the transistors can be so ldered as natas possible to the board . The groovesarc laid out a litt le wide, to give agreater to lerance in the mounting of thctransistors.

'In c Tenon board has a recess of 4.5mm. x 17 mm . and two recesses of 6.5mm. x 22 mm.• into which the tran sis­tors are inserted and then screwed tothe cooling body (see Fig.S). Betweenthe board and the cooling body. there isalso some copper foil (dimensions

- Assemble and incorporate the powersupply hoard. The gale resistances(R4, R5) shou ld a lready he solderedto the power supply for a betterassem bly!

Tip: To avoid regenerative feedback.the gate power supply connection forthe transistor, n , Ihrouxh thi' resist­ance, R6, may not go straightacross theboard. but must be taken round outside,like the drain power supply (see Fig.5).

- Install and wire up the 8 feedthroughcapacitors (1 nF) and the blockingcapacitors, C9 - CI5. C I 7. C 19.

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Page 8: A 10 W Power Amplifier for the 13cm Band using GaAs Technology Archive/A_10_W... · 2016. 1. 20. · (40 dBm output power 1 10 an1 37%). there is a lower power advantage in favour

VHF COMMUNICATIONS4/95(~, ------------'""'-""""'''''''''''-'''''"~

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VHF COMMUNICATIONS 4195

- Insu lated fastening and connect ingo f vo l tage re gu lator us in gfeedthrough capacitors.

- Insta ll and connect resistan ces (R7,R8, R9, RH, R1 2) on and tohigh-frequency board.

- Install trimmers (C I • C6)

Tip: Ceramic trimmers of the Johanson0.5 - 2.5 pF type are more suitable thanTeflon trimmers, as they still Rivestable capacity values, even after re­peated calibrations!

- Install chip capacitors (C7 - C IO)

Tip: You should definitely use the verylow 1().\·.~ A1C 100 porcelain type [romJohanson .

- De-bu gging the pow er supply(110 and UD)

- Insta ll GaAsl-ETs

- S e t zero signa l curren ts :0905 - ID = O.SA; 0906 - ID = l.IA

4.READINGS

After calibration at 2,320 MH7.. tileprototype attained an output power ofI I waus with a driving power of120 mW. The measurement was carriedcur using an lI P 432B Wattmeter and a30 dB + 10 dB aucnuator from Narda.

Fig.9 shows the amplifier's transfercharacteristic. The compression areabegins at an output power level ofapproximatel y 10.5 Watts - i.c . any

:ru le I I L T1 0 13 4 1 Ub .. r Ou oo<o

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I>:l- a 2 0\0 , 5'1'

Fig.7: PSU Layout"" • J

Duko = Feedt hrough CapacitorUber Dukof = using "'fi"llhroll~h Ca paci tors

225

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reed-Through

Feed-Through

Feed-Th roughZe nerZenerLow Drop T0 247T0 92OILSPiher/CermetPihcr/CcrmetPihcr/CcrmctMetal f ilmMet al h imMeta l FilmMetal FilmMetal FilmMdal Films~m

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VHF COMMUNICATIONS 4/95

InFIOIlFIOIJ.F22"F22" FIOJ.lFIOJlF10"FO. I"FO.lj.lFO.I).lF1OI-lPlOj.l.F10,,"100nfInflOOn} '

l IlFIOOnPInFZDl6ZD4.71.T10R4781.06rCI.76602.51.:0 (21<0)2.5H 1: (21.:0)2.5k! 1 (21.:0)2kG (22K II 2.2K )270010104700470047047004700470030 / 1.5W0.50 I IW0.50 t v«BC546B

CapacitorCapacitorCapacitorCapacitorCapacitorCa pacito rCa pacitorCa pacitorCapac itorCapac itorCapaci torCa pacitorCapacitorCapacitorCapacitorCapacitorCapacitorCapacitorCapaci torCapacitorniodeDiodeVoltage Regu latorVoltage Reg ulatorOC·OC ConverterPo te ntiometerPotentiometerPotentiometerRes istorResistorRes istorResistorResi storRe sistorRes istorResistorResistorRes istorRes istorResi storTransistor

c+-----------'-"'--"===-"""'=C IC2C3C4C5C6C1C'C9C IOCIICI2C l3(: 14C l5C !6C 17CI RC I9C201>11J2le IIC2le 3PIP2P1R IR2R3R4RoR6R7R'R9RIORIIRI2T1

+5 InF Feed-Through Ca pacitors for PSU from UG3 and LTl084. (see Fig.S)

Fi~. 8: PSU Parts List226

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0 ""I ro :..../p T a

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//m »:W 0 , , ,

o zo '" so eo "" ''''Input III mW

VHF COMMUNICATIONS 4/95

PA1 3·l0W0906 10Vf1,1A 0905 8V/O.8A

further increase in power leads to aconsiderable reduc tion i ll the inter­modulation interval and tim" \(l signaldistortion in linear mode ,

Hg.J u shows the gain slope measuredby means of an Il P ~l()()()H sweeperwith XCJ99B at all input power of 50mw and p lotted against the frequency .

Here curve A shows the stope measuredfor an amplifier tuned 10 2.320 MHz.Curve R shows the slope in u ..imula ­non of S21. as per H~. 1. The amplifier

Fi~.9:

Transrer Charae tertsuetor lOW PA

consequently has a power hand widthof over 100 MIlz. Its amplificationdrop to the limit frequencies is. o fcourse. somewhat greater than in CurveB. The linear amplificati on of 20 dBattained dev iates on ly slightly from thecalculated values.

Thi s amplifier can be used in the"TVrange at 20380 Mltz - with rathe r lessamplification for the same outputpowe r. of course. The aut hor there foredeveloped an amplifier specia lly de-

vp

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as

227

Page 12: A 10 W Power Amplifier for the 13cm Band using GaAs Technology Archive/A_10_W... · 2016. 1. 20. · (40 dBm output power 1 10 an1 37%). there is a lower power advantage in favour

VHF COMMUNICATIONS 4/95(~ ~~~~~~);2

signed for the ATV range, with amaximum amplification level app. 80MHz higher. Another article in the ncarfuture will give details of the layoutand the readings obtained.

Note: The PUFF CAD software pack­age used in this project is availablef rom KM Publications at the usualaddress. The pric e of the software atthe rime of publication of (his article is£20 .00 plus shipping at cost.

5.LITERATURE

III Hcckncr, II.: /I.. Power Amplifierfor the l Scm nand using (TaA sTechnologyVHF Communications 3/1994,pr . 130-141

(2) Berte!smeier, R.: PUFF-DesignSoftwareDubus-Info, vel. 18 (1989), no. 4,pp. 30 - 33

[3] Lent z, R.E.: PUFF - a CADProgram for Microwave StriplineCircuitsVHF Communications 2/1991.pp. 66-68

[41 Wedge, S.W.• Compton, R. andRutledge, D.:PUH· ComputerAided Design for MicrowaveIntegrated CircuitsAvailable from KM Publications

L5] Unger I Harth: High-FrequencySemi-Conductor Ele ctronicsHirzel-Verlag StuttgartISBN 37776 0235 3

f61 Kuhn e. M,: High-PowerGaAs·rET Amplifier for 9 em.Dubus -lnfo , vo l. 20 (199 1). no. 2.pp. 7 - 16

ADDITIONS TO OUR BOOK LISTKM Publications now stocks a selection of ARRL books

especially dealing with VHF and upwards and Antenna Design

Price UK World22.50 +3.30 +6.0012.50 +1.50 +2.0016.00 +3.00 +3.7516.00 +2.50 +3.0022.50 +5.00 +7.25

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