ZVP4525G

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S E M I C O N D U C T O R S

ISSUE 4 - J UNE 2004

1

SUMMARY V(BR)DSS =-250V; R DS(ON) =14V; I D=-265mA

DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of telecom and general high voltage circuits.

SOT89 and SOT23-6 versions are also available.

FEATURES High voltage

Low on-resistance

Fast switching speed

Low gate drive

Low threshold

Complementary N-channel type ZVN4525G

SOT223 package

APPLICATIONS Earth recall and dialling switches

Electronic hook switches

High voltage power MOSFET drivers

Telecom call routers

Solid state relays

ORDERING INFORMATIONDEVICE REEL SIZE TAPE WIDTH QUANTITY

PER REEL

ZVP4525GTA 7 8mm embossed 1000 units

ZVP4525GTC 13 8mm embossed 4000 units

DEVICE MARKING ZVP4525G

250V P-CHANNEL ENHANCEMENT MODE MOSFET

DDS

GTOP VIEW

SOT223

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THERMAL RESISTANCEPARAMETER SYMBOL VALUE UNIT

J unctio n to ambient (a) R J A 63 C/W

J unctio n to ambient (b) R J A 26 C/W

NOTES :(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air condi tions(b) For a device surface mounted on FR4 PCB measured at t 5 secs.(c) Repetitive rating - pul se width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT

Drain-source voltage VDSS 250 V

Gate source voltage V GS 40 V

Continuous drain current (V GS =10V; TA =25C)(a)

(VGS =10V; TA =70C)(a)

IDID

-265-212

mAmA

Pulsed drain current (c) IDM -1 A

Continuous source current (body diode) I S -0.75 A

Pulsed source current (body diode) I SM -1 A

Power dissipation at T A=25C(a)

Linear derating factorPD 2

16W

mW/C

Operating and storage temperature range T j : T stg -55 to +150 C

NB High voltage applications

For high voltage applications, the appropriate industry sector guidelines should be considered with regard tovoltage spacing between conductors.

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CHARACTERISTICS

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ELECTRICAL CHARACTERISTICS (at T amb =25Cunlessotherwisestated)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS

STATIC

Drain-source breakdown voltage V (BR)DSS -250 -285 V I D=-1mA, V GS =0V

Zero gate voltage drain current I DSS -30 -500 nA V DS =-250V, V GS =0V

Gate-body leakage I GS S 1 100 nA VGS =40V, V DS =0V

Gate-source threshold voltage V GS(th) -0.8 -1.5 -2.0 V I D=-1mA, V DS =V GS

Static drain-source on-state resistance (1) RDS(on) 1013

1418

VGS =-10V, I D=-200mAVGS =-3.5V,ID=-100mA

Forward transconductance (3) g fs 80 200 mS V DS =-10V,I D=-0.15A

DYNAMIC (3)

Input capacitance C iss 73 pFVDS =-25 V, V GS =0V,f=1M HzOutput capacitance C oss 12.8 pF

Reverse transfer capacitance C rss 3.91 pF

SWITCHING (2) (3)

Turn-on delay time t d(on) 1.53 nsVDD =-30V, I D=-200mARG=50 , VGS =-10V(refer to test circuit)

Rise time t r 3.78 ns

Turn-off delay time t d(off) 17.5 ns

Fall time t f 7.85 ns

Total gate charge Q g 2.45 3.45 nCVDS =-25V,V GS =-10V,ID=-200mA(refer totest circuit)

Gate-source charge Q gs 0.22 0.31 nC

Gate drain charge Q gd 0.45 0.63 nC

SOURCE-DRAIN DIODE

Diode forward voltage (1) VSD 0.97 V T j =25C, I S =-200mA,VGS =0V

Reverse recovery time (3) t rr 205 290 ns T j =25C, I F=-200mA,di/dt=100A/ s

Reverse recovery charge (3) Q rr 21 29 nC

NOTES:(1) Measured under pulsed conditions. Wi dth=300 s. Duty cycle 2%.(2) Switching characteristics are independent of operating junction temperature.(3) For design aid only, not subject to production testing.

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TYPICAL CHARACTERISTICS

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CHARACTERISTICS

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Basic Gate Charge Waveform GateCharge Test Circuit

Switching TimeWaveforms Switching TimeTest Circuit

Charge

QGS QGD

QG

10V

VG V

VDS

GS

12V 0.2F50k

0.3F

ID

IG

CurrentRegulator

Same asD.U.T

D.U.T

VDS

VGS

90%

10%

tr tf td(off)td(on)

RG

VGS

RD

VDS

Vcc

-10V Pulse Width

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S E M I C O N D U C T O R S 8


Europe

Zetex GmbHStreitfeldstrae 19D-81673 MnchenGermany

Telefon: (49) 89 45 49 49 0Fax: (49) 89 45 49 49 [email protected]

Americas

Zetex Inc700 Veterans Memorial HwyHauppauge, NY 11788USA

Telephone: (1) 631 360 2222Fax: (1) 631 360 [email protected]

Asia Pacific

Zetex (Asia) Ltd3701-04M etroplaza Tower 1Hing FongRoad, Kwai FongHong Kong

Telephone: (852) 26100 611Fax: (852) 24250 [email protected]

Corporate Headquarters

Zetex plcLansdowne Road, ChaddertonOldham, OL9 9TYUnited Kingdom

Telephone (44) 161 622 4444Fax: (44) 161 622 [email protected]

These offices are supported by agents and distributors in major countries world-wide.

This publicationis issuedto provideoutlineinformationonly which (unless agreedby theCompanyin writing)maynot beused, applied or reproducedforany purposeor formpartof any order or contractor beregarded asa representation relating tothe products or servicesconcerned.The Companyreserves the right to alter without notice the specification, design, price or conditions o f supply of any product or service.

For the latest product information, log on to www.zetex.com

Zetex Semiconductors plc 2004

PACKAGE OUTLINE PAD LAYOUT DETAILS

DIMMillimeters Inches

DIMMillimeters Inches

Min Max Min Max Min Max Min Max

A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC

A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC

b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287

b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146

C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 -

D 6.30 6.70 0.248 0.264 - - - - -

PACKAGE DIMENSIONS

Controlling dimensions are in millimeters. Approximate conversions are given in inches

Documents

ZVP4525G