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November 2013

©2006 Fairchild Semiconductor Corporation FDB2710 Rev. C1

www.fairchildsemi.com1

Absolute Maximum Ratings TC = 25°C unless otherwise noted

FDB2710N-Channel PowerTrench® MOSFET 250 V, 50 A, 42.5 mΩ

Features• RDS(on) = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A

• Low Gate Charge

• High Performance Trench Technology for Extremely LowRDS(on)

• High Power and Current Handing Capability

General DescriptionThis N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Applications • Synchronous Rectification

• Battery Protection Circuit

• Motor Drives and Uninterruptible Power Supplies

GS

D

D2-PAKG

S

D

FDB

2710 — N

-Channel Pow

erTrench® M

OSFET

Thermal CharacteristicsSymbol Parameter FDB2710 Unit

RθJC Thermal Resistance, Junction-to-Case, Max. 0.48 °C/W

RθJA

40

°C/W

RθJA

62.5

°C/W

Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.

Thermal Resistance, Junction to Ambient (1 in2 pad of 2 oz copper), Max.

Symbol Parameter FDB2710 UnitVDS Drain-Source Voltage 250 V

VGS Gate-Source voltage ± 30 V

ID Drain Current - Continuous (TC = 25°C)- Continuous (TC = 100°C)

5031.3

AA

IDM Drain Current - Pulsed (Note 1) See Figure 9 A

EAS Single Pulsed Avalanche Energy (Note 2) 145 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PD Power Dissipation (TC = 25°C)- Derate above 25°C

260 2.1

WW/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TL Maximum Lead Temperature for Soldering Purpose,1/8” from Case for 5 Seconds 300 °C

©2006 Fairchild Semiconductor Corporation FDB2710 Rev. C1

www.fairchildsemi.com2

Package Marking and Ordering Information

FDB

2710 — N

-Channel Pow

erTrench® M

OSFET

Device Marking Device Package Reel Size Tape Width QuantityFDB2710 FDB2710 D2-PAK 330 mm 24 mm 800 units

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Conditions Min Typ Max UnitOff Characteristics

BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 250 -- -- V

ΔBVDSS/ ΔTJ

Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25°C -- 0.25 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = 250V, VGS = 0VVDS = 250V, VGS = 0V,TC = 125°C

----

----

1500

μAμA

IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

On Characteristics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 4.0 5.0 V

RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 25A -- 36.3 42.5 mΩ

gFS Forward Transconductance VDS = 10V, ID = 25A -- 63 -- S

Dynamic Characteristics

Ciss Input CapacitanceVDS = 25V, VGS = 0V,f = 1.0MHz

-- 5470 7280 pF

Coss Output Capacitance -- 426 570 pF

Crss Reverse Transfer Capacitance -- 97 146 pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = 125V, ID = 50AVGS = 10V, RGEN = 25Ω

(Note 4)

-- 80 170 ns

tr Turn-On Rise Time -- 252 515 ns

td(off) Turn-Off Delay Time -- 112 235 ns

tf Turn-Off Fall Time -- 154 320 ns

Qg Total Gate Charge VDS = 125V, ID = 50AVGS = 10V

(Note 4)

-- 78 101 nC

Qgs Gate-Source Charge -- 34 -- nC

Qgd Gate-Drain Charge -- 18 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 50 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 150 A

VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 50A -- -- 1.2 V

trr Reverse Recovery Time VGS = 0V, IS = 50AdIF/dt =100A/μs

-- 163 -- ns

Qrr Reverse Recovery Charge -- 1.3 -- μC

Notes:1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 1mH, IAS = 17A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C3. ISD ≤ 50A, di/dt ≤ 100A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Essentially Independent of Operating Temperature Typical Characteristics

©2006 Fairchild Semiconductor Corporation FDB2710 Rev. C1

www.fairchildsemi.com3

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

0.1 1 101

10

100

* Notes :1. 250μs Pulse Test2. TC = 25oC

VGS

Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V

Bottom : 5.5 V

I D,D

rain

Cur

rent

[A]

VDS,Drain-Source Voltage[V]

500

64 8 101

10

100

-55oC

150oC

* Notes :1. VDS = 20V2. 250μs Pulse Test

25oC

I D,D

rain

Cur

rent

[A]

VGS,Gate-Source Voltage[V]

250

0 25 50 75 100 125 1500.02

0.03

0.04

0.05

0.06

0.07

* Note : TJ = 25oC

VGS = 20V

VGS = 10V

RD

S(O

N) [

Ω],

Dra

in-S

ourc

e O

n-R

esis

tanc

e

ID, Drain Current [A]20. 0.4 60. 0.8 01. .1 2

1

10

100

TA = 150oC

I S, R

ever

se D

rain

Cur

rent

[A]

VSD, Body Diode Forward Voltage [V]

TA = 25oC

150* Notes : 1. VGS=0V2. 250μs Pulse Test

10 1- 100 1010

3000

6000

9000

Coss

Ciss

Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + CgdCrss = Cgd

* Note:1. VGS = 0V2. f = 1MHzCrss

Cap

acita

nces

[pF]

VDS, Drain-Source Voltage [V]30 0 10 20 03 04 50 60 07 80

0

2

4

6

8

10

* Note : ID = 50A

VDS = 50VVDS = 125VVDS = 200V

V GS,

Gat

e-So

urce

Vol

tage

[V]

Qg, Total Gate Charge [nC]

FDB

2710 — N

-Channel Pow

erTrench® M

OSFET

©2006 Fairchild Semiconductor Corporation FDB2710 Rev. C1

www.fairchildsemi.com4

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

Figure 11. Transient Thermal Response Curve

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

* Notes : 1. VGS = 0V 2. ID = 250μA

BV D

SS, [

Nor

mal

ized

]D

rain

-Sou

rce

Bre

akdo

wn

Volta

ge

TJ, Junction Temperature [oC]-100 -50 0 50 100 150 2000

1

2

* Notes :1. VGS = 10V2. ID = 25A

r DS(

on),

[Nor

mal

ized

]D

rain

-Sou

rce

On-

Res

ista

nce

TJ, Junction Temperature [oC]

2.5

25 50 75 100 125 1500

10

20

30

40

50

60

vs. Case Temperature I D

, Dra

in C

urre

nt [A

]

TC, Case Temperature [oC]1 10 100

0.01

0.1

1

10

100

400

1ms

10 ms

DC

Operation in This Area is Limited by R DS(on)

* Notes :1. TC = 25oC

2. TJ = 150oC3. Single Pulse

100μs

Dra

in C

urre

nt, I

D [A

]

Drain-Source Voltage, VDS [V]

500

10-5 10 4- 10-3 10-2 10 1- 100 10110 3-

10-2

10-1

100

0.01

0.1

0.2

0.05

0.02

* Notes :1. ZθJC(t) = 0.48oC/W Max.2. Duty Factor, D=t1/t23. TJM - TC = PDM * ZθJC(t)

0.5

Single pulse

Z θJC

(t), T

herm

al R

espo

nse [o

C/W]

Rectangular Pulse Duration [sec]

t1

PDM

t2

FDB

2710 — N

-Channel Pow

erTrench® M

OSFET

©2006 Fairchild Semiconductor Corporation FDB2710 Rev. C1

www.fairchildsemi.com5

Figure 12. Gate Charge Test Circuit & Waveform

Figure 13. Resistive Switching Test Circuit & Waveforms

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

VVGSGS

VVDSDS

1010%%

90%90%

ttd(d(onon)) ttrr

tt onon tt ofofff

ttd(d(ooffff)) ttff

VVDDDD

VVDSDSRRLL

DUDUTT

RRGG

VVGSGS

VGS

IG = const.

VVGSGS

FDB

2710 — N

-Channel Pow

erTrench® M

OSFET

©2006 Fairchild Semiconductor Corporation FDB2710 Rev. C1

www.fairchildsemi.com6

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

••

DUTDUT

VVDSDS

++

__

DrivDrivererRRGG

SamSamee T Tyyppee as DUTas DUT

VVGSGS •• ddvv//dtdt ccoontntrroolllleedd b byy R RGG

IISDSD ccoonnttrroolllleedd by by pu pullsse pee perriiodod

VVDDDD

LLLII SDSD

1010VVVVGSGS

( Driv( Driver )er )

II SDSD

( DUT )( DUT )

VVDSDS

( DUT )( DUT )

VVDDDD

BoBodydy D DiiooddeeForForwward Vard Voollttagage Dre Dropop

VVSDSD

IIFMFM , Bo, Bodydy DiDiodode Fe Foorrwwaarrd Cd Cuurrrrenentt

IIRMRM

BoBodydy D Diiodode Re Reevveerrssee C Cuurrrreenntt

BoBodydy Di Diodode e RReecovcoveerryy dvdv/d/dtt

didi/d/dtt

D =D =D = ------GateGateGate--------------------------- P P Puuulllsss------------------------e e e WWWiiiddd---------------ttthhhGaGaGate Pute Pute Pulllssseee PePePerrriiiododod

--- ---

FDB

2710 — N

-Channel Pow

erTrench® M

OSFET

©2006 Fairchild Semiconductor Corporation FDB2710 Rev. C1

www.fairchildsemi.com7

FDB

2710 — N

-Channel Pow

erTrench® M

OSFET

Mechanical Dimensions

Dimension in Millimeters

TO-263 2L (D2PAK)

Figure 16. 2LD, TO263, Surface Mount

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002

©2006 Fairchild Semiconductor Corporation FDB2710 Rev. C1

www.fairchildsemi.com8

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*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, orsystem whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety oreffectiveness.

PRODUCT STATUS DEFINITIONSDefinition of Terms

AccuPower™AX-CAP®*BitSiC™Build it Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer Logic™DEUXPEED®

Dual Cool™EcoSPARK®

EfficentMax™ESBC™

Fairchild®

Fairchild Semiconductor®FACT Quiet Series™FACT®

FAST®

FastvCore™FETBench™FPS™

F-PFS™FRFET®

Global Power ResourceSM

GreenBridge™Green FPS™Green FPS™ e-Series™Gmax™GTO™IntelliMAX™ISOPLANAR™Marking Small Speakers Sound Louder and Better™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MicroPak2™MillerDrive™MotionMax™mWSaver®OptoHiT™OPTOLOGIC®

OPTOPLANAR®

PowerTrench®

PowerXS™Programmable Active Droop™QFET®

QS™Quiet Series™RapidConfigure™

Saving our world, 1mW/W/kW at a time™SignalWise™SmartMax™SMART START™Solutions for Your Success™SPM®

STEALTH™SuperFET®

SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS®

SyncFET™

Sync-Lock™®*

TinyBoost®TinyBuck®

TinyCalc™TinyLogic®

TINYOPTO™TinyPower™TinyPWM™TinyWire™TranSiC™TriFault Detect™TRUECURRENT®*SerDes™

UHC®

Ultra FRFET™UniFET™VCX™VisualMax™VoltagePlus™XS™

®

™

Datasheet Identification Product Status Definition

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Rev. I66

tm

®

FDB

2710 — N

-Channel Pow

erTrench® M

OSFET

www.onsemi.com1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patentcoverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customerapplication by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are notdesigned, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classificationin a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorizedapplication, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, andexpenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if suchclaim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. Thisliterature is subject to all applicable copyright laws and is not for resale in any manner.

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