WP4Dissemination, cost calculation and exploitation

Final Meeting Review, 23-10-2015, Paris

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WP goals

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o Pattern with various techniques o of litho and etcho periodic and non-periodic

o Characterise the patternso Find how to passivate them

WP2

o Model various nanopatterned structures and extract their Jsc

o Give guidelines of optimal structures

o Gather reliable data for modelso Define benchmark structures

WP1

o Fabricate thin c-Si filmso Integrate nanopatterns into solar cells

and reach record Jsc valueso Demonstrate upscalability

WP3o Evaluate industrialiability of

nanopatterningo Evaluate their costs and life cycleo Disseminate results and protect IP

WP4

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o Task 4.1 Dissemination, supervisor Imeco Task 4.2 Cost calculations, supervisor Totalo Task 4.3 Exploitation, supervisor Total

WP4

WP tasks and people to achieve themImec Valérie, Ounsi, Christos

INL Christian, Regis, Loïc, Alain

LPICM Pere, Wanghua

Obducat Jiawook, Ki-Dong

Chalmers Ines, Alexander

Total Patricia, Fitzgerald, Alan, Loïc

Outline

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1. Dissemination

2. Technico-economical study

2.1. Cost calculation

2.2. Life Cycle Assessement

3. Exploitation

5

All partners

WP4- Dissemination, cost calculation and exploitation.

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Task 4.1 : Dissemination

(Imec)

Scientific conferences and publications to disseminate project results via

both academic and industrial channels

Large-media communication

to provide international visibility, including in a non-

specialised audience.

Task 4.2 : Cost calculation (Total)

Cost calculation To evaluate both the saving and the supplementary costs

induced.

Life cycle assessment To evaluate the environmental

footprint of implementing the project.

Task 4.3 : Exploitation

(Total)

Identification of routes of exploitation Evaluation of industrialization

option and development results obtained.

IP protection after careful assessment of

the merits of inventions created during the project

Dissemination

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Task 4.1 Disseminati on

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o Good visibility of the project with 55% of the publication in conference : 5 Invited Oral and 1 selected for Highlights EUPVSEC

o Numerical simulation and Nanopatterning have been the most prolific WP

o Quality of the interraction between partners : Mainly 1 partner publication but consistent number of publication shared with several partners.

Pending2 (4%)

Large Media1 (2%)

Proceedings5 (11%)

Article13 (28%)

Poster10 (22%)

Oral15 (33%)

WP43 (4%)

WP321 (27%)

WP230 (38%)

WP125 (32%)

DISSEMINATION LIST

7 Part.6 (13%)

6 Part.1 (2%)

3 Part.2 (4%)

2 Part.10 (22%)

1 Part.26 (58%)

Distribution of the 49 publications :

Publication categories Work Package Nb of involved partners

Technico-Economical study

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Task 4.2: Cost calculati on and life cycle assesment

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Objectives: Evaluate the impact of new process(es)

Process modification• Thin layer processing• Patterning • Supplier equipment maturity• Module integration

Lower Si consomption• no wafer (ingot, cutting,…)

?

Objectives : Evaluate the impact of new process(es) at the cell fabrication scale

Decrease the cost

Increase the cost ?

Efficiency

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Benchmark

Task 4.2: Cost calculati on and life cycle assesment

c-Si Wafer based Thin c-Si layer based PhotoNvoltaics

Panasonic 1366 Technologies

Panasonic Solexel Crystal Solar

Efficiency 25.6 % 17% 24.7% 20.62% 16% 15-22 %

Surface (cm²) 143.7 243.4 101.8 243.4Thickness (µm) 200 98 35 50 1-40Throughput 3600*

Wf/h3.2 MW/y > 300 Wf/h

Cost @ Cell $ 1.4 /cell (Cell 2011)

$ 0.08/W (Cell Target)

$ 0.52/W (Cell,Achieved)

Cost @ Module $ 0.4/W $ 0.50/W (Module Target)

$ 0.42/W (Module)

$ 0.40/W (Module Target)

* Fairly standard throughput

Competitive field with some relevant results not any more at a lab research stage

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Distributi on of cost items in PV Module

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o Low potential cost reduction : o The price reduction we expect by using thinner layer have a potential impact on only 33%

of the cost of the product

o Constent decrease of the the Poly Si price from 67 US$/kg (2010) down to 16.6 US$/kg (04-2014)

o Improvement in reducing sawing waste by using wires with smaller diameter

ITRPV 2015

Short margin on cost reduction by using thin c-Si layer

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Wafer thickness roadmap in PV industry

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o Limit of cell thickness in current module techno :

o Improved wafer sawing techno + reduced kerf less loss and Total thickness varaitiono Innovative handlings technoo New high eta cell concept suitable for thinbner waferso New interconnect and encapsulation techno at modume level

Integration of tinner wafer is always postponed

20152014

In 2012 In 2014

2013 170 µm 180 µm

2016 170 µm

2023 100 µm

2025 125 µm

o Technological implications for thinner wafer :

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Task 4.2: Cost calculation : CoO assessment

Context/Assumption (based on a standard PV production line) :

Profitable/unprofitable range, €/cell, €/kWh

Cost of Ownership (CoO) : financial estimate intended to determine the cost associated with the acquisition, use and maintenance of goods and services.

Based on SEMI Standards E35 (CoO calculation), E10 (machine utilization) and E79 (equipment efficiency)

Parameters

Substrate size 243.4 cm² (15.6×15.6 cm²)

Throughput 3 600 wafers/hour (wph).

Productivity OEE (Overall Equipment Effectiveness) : 0.974

Depreciation 1% per year /10 years

Floor space Estimated from equipement data sheet

Materials/Consumables Data collection

Utilities Electricity, compressed air, cooling water

Labour Cost of Operator, Supervision, Engineering and Maintenance

Cost of yield loss 99.9%

Wafer cost 1 €

Cell efficiency 20% (relastic, obtained by Solexel)

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Task 4.2: Cost calculation and life cycle assesment

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Describe the process steps

Collect Data on capex and opex

Cost

calculation

and life cycle

assesment

Fabrication line model / Equipement

dvp requested?

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Si Layer

Nanopatterning

Etching

Task 4.2: Cost calculation and life cycle assesment

WET ETCHING

DRY ETCHING

HCL Hole-Mask Colloidal Litho

WET ETCHING DRY ETCHING

NIL Nanoimprint Litho

LIL Laser Interference Litho

Epi PECVD – 1 to 10 µm Epifoil – 40 µm

Thin Si Layer Transfer : Anodic bonding

Nanopatterning

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Task 4.2: Cost calculation: Equipements

HCL

Process stepsEquipments

Laboratory IndustrialLayer cleaning Cleaning Beaker Cleaning station

Mask deposition Triple layer deposition

Pipette + Beaker Spray coating + Cleaning station

Mask patterning Step 1

Beads deposition Ultrasonic bath + Pipette

Spray coating

Beaker + Hot plate Cleaning stationMask patterning

Step 2Mask deposition Electron beam

assisted evaporation

Thermal evaporation

Beads removal Beaker Cleaning station

LIL

Process steps EquipmentsLaboratory Industrial

Mask deposition SiO2 deposition PECVD PECVD

Mask patterning Resist deposition Spin coating Spray coatingLaser exposure Laser+ optical table ?Development Beaker Wet bench

In lab : tool not suitable for high throughput in productionAvailable mass production tool with specifications as closed as possible Multiply number of tools to meet the throughpu

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Task 4.2: Cost calculation: HCL process

o Main impact on prices : the beads depositiono Impact of chemical prices (~86 %) or consumption (~88 %) is similar.

Lab price lowest chemical consu. Lowest prices0

1

2

3

4

5

26

28

30

32

34

36

Cos

t of o

wne

rshi

p (€

/ w

afer

)

Cleaning Mask deposition : Triple layer Patterning-step 1 (Beads) Patterning-step 2 (Mask on beads)

Impact of process steps on prices Process steps

Layer cleaning CleaningMask deposition Triple layer

depositionMask patterning

Step 1Beads deposition

Mask patterning Step 2

Mask deposition

Beads removal

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Task 4.2: Cost calculation: HCL process

Lab price

Price reduction

Red. chemical consu.

Plasma cleaning

3

x volume ethylene

Plasma cleaning

R

euse 5 x

Lowest beads consu.

Lowest price (beads + PPDA)0

1

2

3

4

20

21

22

23

24

25

26

27

C

ost o

f ow

ners

hip

(€ /

waf

er)

Mask patterning 1 (beads deposition)

Yield loss Utilities Floor space costs Labor Cost Depreciation Materials/Consumables

The cost driver of HCL : chemical products The cost ranges between 7€/wafer down to 1,5 €/wafer.

Parameters that impact the cost :

Scale up rules for the amount of the chemical products at a wafer size• Three times the volume of a standard wafer

instead of using a quantity proportional to the area : decreases by 42 %

• Assuming saving 40% of products, lowers the cost further by 33%

Purchasing higher volumes of products cuts prices :

• Available data : the ethylene glycol cost decreases from 50€/L at the lab-scale down to 3€/L when purchased by 200L unit. cost dividing by 5

• Not available data : selling price may be divided by a factor of 2 to 15. Assuming a conservative factor of 5, especially for bead solution (1830 €/L) and PDDA (45€/L), lowers the cost by 27%

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Task 4.2: Cost calculation : LIL process

The cost of LIL nanopatterning is about 0,9 €/wafer (0,19 €/Wp). The cost driver is Mat/consumption (photoresist).

Mat/co

nsum

Deprec

iation

Labor c

ost

Floor s

pace

Utilities

Yield lo

ss0

0.1

0.2

0.3

0.4

0.5

0.6

Cost drivers

Cost

of o

wne

rshi

p ($

/waf

er)

0 100200

300400

500600

700800

9001000

0.80.9

11.11.21.31.41.51.61.7

Impact of floor space and person/shift of CoO

Floor Space (m²)

Cost

of o

wne

rshi

p (€

/Waf

er)

80 p/shift

40 p/shift

20 p/shift10 p/shift

1 p/shift

o Assumptions on laser equipement :o Still at a lab-scale with a very low throughput (4 wafers/hour) 900 toolso Specific environment + ½ of the initial investment. o The impact of floor space (< 10% of Total Cost) and person/shift (40×p/shift 2 × CoO) is low to neglegible.

o No SiO2 hard mask :o From MicroResist Technology : P (price) = 1090.7 V-0.197 Need to purchase 20 000 L to meet 0.85 €/wf o For speciality chemicals, b ~ 0.75 (Ristow PhD).

Need to purchase 15 L to meet 0.85 €/wf In case of 100 L : 0.35 €/wf

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Task 4.2: CoO of Nanopatterning

o All nanopatterning techniques are much more expensive (0.5-1 € /wafer) than standard random wet etching (~ 0,025 €/wafer).

o Development of new tools is needed for HCL and LIL techniques.o Consummables are the main path to reduce cost.o High uncertainty in the cost calculation of the no mature techniques (LIL and HCL)

6,9

4,84,5

3,1

1,1

0,85

0,65

Max

Red. k

nown

Plasm

a cl.

Red. E

th.

Red. A

llLI

L NIL0

1

3

4

5

6

7

C

ost o

f ow

ners

hip

(€ /

waf

er)

Yield loss Utilities Floor space costs Labor Cost Depreciation Materials/Consumables

HCL

Thin c-Si layer deposition

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Task 4.2: Cost calculation : Epi-layero Hight ToC Epitaxial layer:

From variuos littérature : about 0,6 € /wf (0, 45 € /wf to 0,8 € /wf)To be noted : deposition rate is 4 µm/min with a throughput > 300 wf/h

o Low ToC Epitaxial layer:

1 2 3 4 5 6 70

1

2

3

4

5

6

7

8

9

10

6,3 nm/s 9,1 nm/s4,2 nm/s0,14 nm/s

Cos

t of O

wne

rshi

p (€

/waf

er)

Deposition rate multiplying factor

1 10 20 30 45 65 9012,6 nm/s

A deposition rate increase between x45 and x65 is required

Cost drivers % of Total Cost

Mat/consum 1,13%

Depreciation 6,32%

Labor cost 21,15%

Floor space 0,92%

Utilities 68,90%Yield loss 1,58%

o Uncertainty bar : electrical consomption /equipement from 50kWh to 150 kWh

Substrate handling : Bonding

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Task 4.2: Bonding on glass

1. Coefficient of thermal expansion as too be closed to silicon 3.10-6 K-1

Pyrex glass (borosilicate) : 3.10-6 K-1

Tempered glass : 9.10-6 K-1

Soda lime glass : 9.10-6 K-1

Aluminosilicate : 4,2.10-6 K-1

Borosilicate glass : 3 to 4,6.10-6 K-1

o Cost calculation :

Module cost at 1,8 €/wf when permanent bonding cost at least 4 /wf

2. Concentration of Na+ their mobility

Na+ concentration of ~ 3.8 wt% is required Soda lime glass : ~ 14 Wt% (Na2O) from PPG + CaO ~ 9 wt% Borosilicate glass (Corning Pyrex, Duran) : 4 Wt% (Na2 + K2O) + NO CaO

Lower amount of Na+ within Pyrex glass but significant lower Na+ ion mobility in soda-lime 2.

1 T.M.H. Lee et al. « Detailed characterization of anodic bondic process between glass and thin-film coated silicon substrates », Sensors and Actuators 86 (2000) 103-1072 A. L. R. Brennand « Thermal poling of multioxide silicate glasses and ion-exchanged waveguides », 2002, University of Southampton

?

Glass bonding is the best way ?

o Technical specifications

Life Cycle Assessment

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Task 4.2: Life Cycle Assessment

Higher CO2 footprint of HCL : impact of aceton and ethylen glycol

Most of the time, impact of consumables is higher than the electrical consumption

High impact of SF6 ( high GWP)

Too mainy uncertainties to make any conclusions

Objectives of a LCA : Study of the materials and the enery flow at choosen step of the life of a product. Sustainable developpment of the product

Mask removalPatterning transfertMask patterningMask depositionCleaning

Carb

on fo

otpr

int (

norm

aize

d da

ta)

Summary

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Task 4.2: Cost calculation

NIL + Epi High ToC is almost competitive with Standard processNIL + Epi Low ToC may be competitive with Standard procee price in 2008RP remains the lowest expensive techniques

Standard 2008 Standard Epi-High T Epi-High T Epi-Low T0,0

0,2

0,4

0,6

0,8

1,0

1,2

1,4

1,6

1,8

2,0

2,2

2,4

2,6

2,8

0,0

0,2

0,4

0,6

0,8

1,0

1,2

1,4

1,6

1,8

2,0

2,2

2,4

2,6

2,8

Cos

t of O

wne

rshi

p (€

/waf

er)

Textu : RP Textu : NIL

Cells Layer c-Si

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Task 4.3: Indentification of routes of exploitationEvaluation of industrialization option and development results obtained.

o Mid-Long Term : o Use in other reasearch programmso Needs developments

WHAT

Mid Term Techno

Epifoil cells with front-side nanopattern Imec, OBDU

Pseudo-disordered patterns, calculations, analysis and patterning INLc-Si (PECVD epi Si) Nano-patterning using wet etching (TMAH) INLdry /wet etching through NIL resists INL, OBDULarge area bottom-up nanopatterning (HCL) Chalmers

Engineering of the density of the colloidal pattern Templates for growth of high-density semiconductor nanowire arrays

Chalmers

Epitaxial growth at low T (microelectronics, PV) : tunable thickness and deposition rate LPICM

Detachment from H-rich porous interface (microelectronics, PV) : tunable thickness and deposition rate (Keep secret) LPICMNanolithography (LIL) INL

Long Term

Techno c-Si Nano-patterning using high pressure dry etching INLc-Si Nano-patterning using inductive coupled plasma etching INL

IT ToolAbsorption computation of active region in nanopatterned complex stacks

Unamur, INL

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Task 4.3: Indentification of routes of exploitationEvaluation of industrialization option and development results obtained.

Our tool box has improved : guidelines for technological path finder some may be ready for use

Need some further work with equipement suppliers

o Short Term :

WHAT HOW

IT Tool Genetic Algorithm Licensing (open or not) UNamur RCWA code Material data base Licensing (open or not)

Techno uSiOx:H passivation layers, ARC & conductivity (temperature resistance) Improve HJ solar cells LPICM

Replace HF cleaning of parent wafer by plasma Improve passivation for all c-Si technologies LPICM

o Further Needs :o Conformal depositiono Find/Improve the handling of thin layero Improve the equipement throughput

Get equipement manufacturers involved

nanophotonics for ultra-thin crystalline silicon photovoltaics

This project has received funding from the European Union’s Seventh Programme for research, technological development and demonstration under grant agreement No 309127